CN109494972A - Dead band time setting method based on enhancement type gallium nitride device - Google Patents
Dead band time setting method based on enhancement type gallium nitride device Download PDFInfo
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- CN109494972A CN109494972A CN201811317196.1A CN201811317196A CN109494972A CN 109494972 A CN109494972 A CN 109494972A CN 201811317196 A CN201811317196 A CN 201811317196A CN 109494972 A CN109494972 A CN 109494972A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
Present invention discloses a kind of dead band time setting methods based on enhancement type gallium nitride device, which is characterized in that S1, the half-bridge circuit for selecting dead time to be placed build dipulse test platform；S2, larger dead time is set in half-bridge circuit；S3, it uses dipulse signal to drive dipulse test platform under conditions of ceiling voltage, maximum load, measures the gate-source voltage V in opening process and turn off processGS；S4, according to the gate-source voltage V in measured opening process and turn off processGSOpen time delay and turn-off delay time are obtained, dead time then is calculated according to open time delay and turn-off delay time.This invention simplifies existing technical solutions, it is only necessary to which the parameter of dead time calculating can be obtained by measuring gate-source voltage, and implementation process is more easy, avoids measurement error.
Description
Technical field
The present invention relates to a kind of dead band time setting method more particularly to a kind of dead zones based on enhancement type gallium nitride device
Time setting method belongs to power electronics control technology.
Background technique
Pass through nearly development in 30 years, the performance approximation theory limit based on silicon materials electronic power switch device.Closely
Several years, there is the wide band gap semiconductor device compared with high electron mobility to have obtained the extensive concern of industry, such as silicon carbide, nitridation
Gallium semiconductor devices etc..Currently, enhancement type gallium nitride semiconductor devices is in electricity such as switch converters, power amplifier, inverters
It can be had been widely used in transformation field.As the switching frequency of enhancement type gallium nitride device increases, switch periods reduce,
Need to carry out dead time more rationally setting, to avoid the excessive influence transducer performance of dead time.Simultaneously because nitridation
The switching speed of gallium device is exceedingly fast, and PCB layout requirements are stringent, so the measurement of its switch time is caused to be inconvenient.To sum up institute
It states, simplify the measurement of switch time and dead time is rationally arranged, there is important application value in the art.
At present the setting method of dead time mainly have Infineon company provide based on insulated gate bipolar transistor
(IGBT) dead time calculation method and GaN systems company provide based on the dead of enhancement type gallium nitride (e-GaN)
Two kinds of area's time setting method, specifically:
(1) Infineon is in application manual " How to calculate and minimize the dead time
Requirement for IGBTs properly " in disclose the dead time calculation formula of IGBT,
Td=[(td_off_max-td_on_min)+(tpdd_max-tpdd_min)] * 1.2,
Wherein td_off_max is maximum turn-off delay time, i.e., drop to maximum value from grid voltage 90% is opened
Begin, drop to 90% time of maximum value to collector current, td_on_min is the smallest open time delay, i.e. grid
Voltage rises to 10% time that collector current is maximum value from 0.Tpdd_max and tpdd_min is respectively driving circuit
Minimum and maximum delay export the time.Since e-GaN and IGBT switch mechanism is different, and in the presence of poor in switching process
It is different, therefore there are certain differences with IGBT dead band time setting method by e-GaN.
(2) GaN systems is provided in application manual " Design with GaN Enhancement mode HEMT "
Dead band time setting formula based on enhancement type gallium nitride,
Td_pwm > tdelay_skew+ (td (off)-td (on)),
Wherein td (off) be turn-off delay time, that is, use gate-source voltage from maximum value drop to voltage for zero when
Between, td (on) open time delay, i.e., the time begun to decline using gate-source voltage from 0 to drain-source voltage.tdelay_
Skew is the deflection delay time of driver output.Since the switching speed of enhancement type gallium nitride device is exceedingly fast, PCB layout requirements
Strictly, dead band time setting needs again while measuring two parameters of grid voltage and drain-source voltage, brings to measurement larger
Difficulty.And turn-off delay time takes grid voltage to drop to voltage from maximum value is zero in dead band time setting formula, takes
It is worth more conservative, obtained dead time is larger.
In conclusion how to propose on the basis of existing technology a kind of by the dead of simplified enhancement type gallium nitride device
Area's time setting method keeps dead band time setting more reasonable, also just becomes the new research direction of those skilled in the art.
Summary of the invention
In view of the prior art, there are drawbacks described above, and the invention proposes when a kind of dead zone based on enhancement type gallium nitride device
Between setting method, include the following steps:
S1, the half-bridge circuit for selecting dead time to be placed, build dipulse test platform；
S2, larger dead time is set in half-bridge circuit；
S3, dipulse signal is used to drive dipulse test platform under conditions of ceiling voltage, maximum load, measurement is opened
Pass through the gate-source voltage V in journey and turn off processGS；
S4, according to the gate-source voltage V in measured opening process and turn off processGSObtain open time delay and pass
Disconnected delay time, dead time then is calculated according to open time delay and turn-off delay time.
Preferably, the calculation formula of larger dead time described in S2 are as follows:
Larger dead time=(td_off+tf) * 10,
Wherein, td_offIndicate the turn-off delay time specified in the databook of device, tfIndicate the data in device
Fall time specified in handbook.
Preferably, refer to that circuit is protected in actual motion occasion under conditions of ceiling voltage, maximum load described in S3
Hold ceiling voltage and maximum current.
Preferably, according to the gate-source voltage V in measured opening process and turn off process described in S4GSIt obtains open-minded
Delay time and turn-off delay time, specifically include:
As V in turn off processGSThere are when Miller platform, using V in turn off processGSDrop to minimum threshold from maximum value
The time of voltage is as turn-off delay time；
As V in turn off processGSThere is no when Miller platform, using V in turn off processGSDropping to voltage from maximum value is
Zero time is as turn-off delay time.
Preferably, according to the gate-source voltage V in measured opening process and turn off process described in S4GSIt obtains open-minded
Delay time and turn-off delay time, specifically include:
Using V in opening processGSThe time of minimum threshold voltage is risen to as open time delay from minimum value.
Preferably, dead time is calculated according to open time delay and turn-off delay time described in S4, calculates public
Formula are as follows:
tdead=(tdelay_skew×r1)+[(td(off)×r2)-(td(on)/r2)],
Wherein, tdeadFor dead time, tdelay_skewFor the deflection delay time of driver output.td(on)To open delay
Time, td(off)For turn-off delay time, r1And r2For surplus coefficient.
Preferably, r1Value be 1.1, r2Value be 1.3.
Compared with prior art, advantages of the present invention is mainly reflected in the following aspects:
The present invention provides a kind of dead band time setting methods based on enhancement type gallium nitride device, simplify existing skill
Art scheme, it is only necessary to which the parameter of dead time calculating can be obtained by measuring gate-source voltage, and implementation process is more easy.In this hair
In bright actual mechanical process, measurement can be completed using only ordinary oscilloscope test pencil, measure drain-source without using high-voltage probe
Pole tension not only simplifies operating process, and avoids the inconsistent caused survey of the transmission delay when multiple signal measurements
Measure error.
Meanwhile in dead time calculation formula of the invention, using isolated surplus coefficient, so that dead time
It is more flexible, reasonable to be arranged, and further enhances practicability of the invention.
In addition, the present invention also provides reference for other relevant issues in same domain, can be opened up on this basis
Extension is stretched, and is applied in the technical solution of other dead band time settings same domain Nei, has very wide application prospect.
Just attached drawing in conjunction with the embodiments below, the embodiment of the present invention is described in further detail, so that of the invention
Technical solution is more readily understood, grasps.
Detailed description of the invention
Fig. 1 is flow diagram of the invention；
Fig. 2 is the test platform schematic diagram built in the embodiment of the present invention；
Fig. 3 is dipulse signal schematic representation in the embodiment of the present invention；
Fig. 4 is signal measurement schematic diagram in the embodiment of the present invention；
Fig. 5 is that there is no Miller platform turn-off delay time instrumentation plans in the embodiment of the present invention；
Fig. 6 is that there are Miller floor switch delay time measurement schematic diagrames in the embodiment of the present invention.
Specific embodiment
As shown in Figure 1, present invention discloses a kind of dead band time setting methods based on enhancement type gallium nitride device, including
Following steps:
S1, the half-bridge circuit for selecting dead time to be placed, build dipulse test platform；
S2, larger dead time is set in half-bridge circuit；
S3, dipulse signal is used to drive dipulse test platform under conditions of ceiling voltage, maximum load, measurement is opened
Pass through the gate-source voltage V in journey and turn off processGS；
S4, according to the gate-source voltage V in measured opening process and turn off processGSObtain open time delay and pass
Disconnected delay time, dead time then is calculated according to open time delay and turn-off delay time.
The above method is further described below in conjunction with specific embodiment.
Using the half-bridge circuit of dead time to be placed, the dipulse test platform built in Fig. 2 as shown in Fig. 2, use
Power inductance L and upper tube V1 are in parallel, select the inductance of low parasitic capacitance, electric current in switching process is avoided to shake.To bridge arm
The switching characteristic of down tube V2 is tested, to obtain the switching delay time of V2.It, can be right as power inductance L and down tube V2 parallel connection
The switching characteristic of upper tube V1 is tested.If verifying the reasonability of dead band time setting, can electric current be set in circuit and is adopted
Sample resistance interface, samples electric current, and 50 milliohms can be selected to the resistance of the low parasitic inductance of 100 milliohms in sampling resistor.If
Sampling resistor is too small, and noise voltage caused by electromagnetic interference can flood measuring signal, but excessive resistance can be to switching process
Generate large effect.
On test circuit base, larger dead time, the calculation formula of the larger dead time are first set are as follows:
Larger dead time=(td_off+tf) * 10,
Wherein, td_offIndicate the turn-off delay time specified in the databook of device, tfIndicate the data in device
Fall time specified in handbook.
In being run according to practical matter, under the conditions of ceiling voltage and maximum load, using dipulse signal drive circuit,
It is described to refer to that circuit keeps ceiling voltage and maximum electricity in actual motion occasion under conditions of ceiling voltage, maximum load
Stream.
The dipulse waveform is as shown in figure 3, obtain gate-source voltage V in switching processGSWaveform.First in dipulse
The time of a pulse is Ton1, the spaced time of second pulse takes the 1/5 of first burst length.Ton1When decision is opened
Carve the value of electric current, the value I of switching time electric currentSWWith burst length Ton1Relationship it is as follows,
ISW=(VDC×Ton1)/L,
Wherein, ISWFor the current value of switching time, unit A.VDCDC bus-bar voltage, unit V.L is the sense of inductance
Value, unit H.Ton1For first pulsing one time, unit s.
It avoids marking using 3 inches when as shown in figure 4, measuring using the method for oscillograph ordinary ultrasonic probe measurement gate-source voltage
Quasi- probe, Ying Caiyong short-term are popped one's head in signal measurement.Gate-source voltage is selected in measurement close to gallium nitride grid and source electrode
Measurement point avoids parasitic inductance from improving the precision of measurement to the influence of measurement.Since enhancement type gallium nitride switching speed is very fast,
Oscilloprobe will have sufficiently high bandwidth, the transient changing that can capture signal.
Under dipulse drive condition, after oscillograph captures gate-source voltage, at the shutdown moment of first pulse, sentence
Disconnected VGSTurn off process in whether there is Miller platform, when be not present Miller platform when, pass through measurement VGSDrop to from maximum value
The time that voltage is zero, instrumentation plan was as shown in Figure 5 as turn-off delay time.When there are Miller platform, pass through measurement
VGSDrop to time of minimum threshold voltage as turn-off delay time from maximum value, instrumentation plan is as shown in Figure 6.Second
The moment is opened in a pulse, by measuring VGSTime of minimum threshold voltage is risen to as open time delay from minimum value,
Instrumentation plan is as shown in Figure 6.
The value measured in the above manner is as open time delay td(on)With turn-off delay time td(off), in order to avoid
Measuring unreasonable bring error causes dead time too small, needs to increase certain surplus, using open time delay and pass
Disconnected delay time is calculate by the following formula to obtain dead time,
tdead=(tdelay_skew×r1)+[(td(off)×r2)-(td(on)/r2)],
Wherein, tdeadFor dead time, tdelay_skewFor the deflection delay time of driver output.td(on)To open delay
Time, td(off)For turn-off delay time, r1And r2For surplus coefficient.
Usual driver deflection delay time is larger compared to the value of switching delay time, is provided by drive data handbook
Data calculate deflection delay time it is accurately reliable, measure VGSWhen in practice existing error it is larger, so dead zone calculation formula
It is middle to be calculated using two different surplus coefficients, general r1Value be 1.1, r2Value be 1.3.
When needing to verify the reasonability of dead band time setting, dead band time setting is the dead time t being calculateddead,
Under the conditions of ceiling voltage and maximum current, using dipulse signal drive circuit, sampling resistor is measured using oscilloprobe
Voltage, the relationship of the electric current of the voltage and conducting at resistance both ends is as follows,
Wherein, RSFor current sampling resistor, IDFor conducting electric current, VRSFor the voltage at sampling resistor both ends.
Due to RSFor definite value, voltage and electric current are linearly related, can reflect the waveform of curent change by the waveform of voltage.
It selects to avoid influence of the parasitic inductance to measurement close to the both ends of sampling resistor when measurement.The voltage V of hourglass source electrode is measured simultaneouslyDS,
Turn-off power loss is calculated according to the voltage current waveform at shutdown moment.According to the conjunction of current waveform and turn-off power loss verifying dead time
Rationality.When dead band time setting is smaller unreasonable, can increase suddenly during electric current decline, and turn-off power loss compares dead zone
Turn-off power loss when time is reasonable can be significantly greater.
The present invention provides a kind of dead band time setting methods based on enhancement type gallium nitride device, simplify existing skill
Art scheme, it is only necessary to which the parameter of dead time calculating can be obtained by measuring gate-source voltage, and implementation process is more easy.In this hair
In bright actual mechanical process, measurement can be completed using only ordinary oscilloscope test pencil, measure drain-source without using high-voltage probe
Pole tension not only simplifies operating process, and avoids the inconsistent caused survey of the transmission delay when multiple signal measurements
Measure error.
Meanwhile in dead time calculation formula of the invention, using isolated surplus coefficient, so that dead time
It is more flexible, reasonable to be arranged, and further enhances practicability of the invention.
In addition, the present invention also provides reference for other relevant issues in same domain, can be opened up on this basis
Extension is stretched, and is applied in the technical solution of other dead band time settings same domain Nei, has very wide application prospect.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit and essential characteristics of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention, and any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (7)
1. a kind of dead band time setting method based on enhancement type gallium nitride device, which comprises the steps of:
S1, the half-bridge circuit for selecting dead time to be placed, build dipulse test platform；
S2, larger dead time is set in half-bridge circuit；
S3, dipulse signal is used to drive dipulse test platform under conditions of ceiling voltage, maximum load, measurement was opened
Gate-source voltage V in journey and turn off processGS；
S4, according to the gate-source voltage V in measured opening process and turn off processGSIt obtains open time delay and shutdown is prolonged
Then dead time is calculated according to open time delay and turn-off delay time in the slow time.
2. the dead band time setting method according to claim 1 based on enhancement type gallium nitride device, which is characterized in that S2
Described in larger dead time calculation formula are as follows:
Larger dead time=(td_off+tf) * 10,
Wherein, td_offIndicate the turn-off delay time specified in the databook of device, tfIndicate the databook in device
Specified in fall time.
3. the dead band time setting method according to claim 1 based on enhancement type gallium nitride device, it is characterised in that: S3
Described in refer under conditions of ceiling voltage, maximum load circuit kept in actual motion occasion ceiling voltage and maximum electricity
Stream.
4. the dead band time setting method according to claim 1 based on enhancement type gallium nitride device, which is characterized in that S4
Described according to the gate-source voltage V in measured opening process and turn off processGSIt obtains open time delay and shutdown is prolonged
It the slow time, specifically includes:
As V in turn off processGSThere are when Miller platform, using V in turn off processGSDrop to minimum threshold voltage from maximum value
Time is as turn-off delay time；
As V in turn off processGSThere is no when Miller platform, using V in turn off processGSFrom maximum value drop to voltage be zero when
Between be used as turn-off delay time.
5. the dead band time setting method according to claim 1 based on enhancement type gallium nitride device, which is characterized in that S4
Described according to the gate-source voltage V in measured opening process and turn off processGSIt obtains open time delay and shutdown is prolonged
It the slow time, specifically includes:
Using V in opening processGSThe time of minimum threshold voltage is risen to as open time delay from minimum value.
6. the dead band time setting method according to claim 1 based on enhancement type gallium nitride device, which is characterized in that S4
Described according to open time delay and turn-off delay time dead time, calculation formula is calculated are as follows:
tdead=(tdelay_skew×r1)+[(td(off)×r2)-(td(on)/r2)],
Wherein, tdeadFor dead time, tdelay_skewFor the deflection delay time of driver output.td(on)For open time delay,
td(off)For turn-off delay time, r1And r2For surplus coefficient.
7. the dead band time setting method according to claim 6 based on enhancement type gallium nitride device, it is characterised in that: r1
Value be 1.1, r2Value be 1.3.
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| CN112183810A (en) * | 2020-08-19 | 2021-01-05 | 西安交通大学 | Electromagnetic interference prediction algorithm based on Miller platform effect |
| CN112803766A (en) * | 2020-12-09 | 2021-05-14 | 天津大学 | Dead zone optimization configuration method for gallium nitride power switch |
| CN113131723A (en) * | 2021-04-15 | 2021-07-16 | 中国矿业大学 | Half-bridge circuit dead zone optimization setting method suitable for enhanced gallium nitride device |
| CN113162373A (en) * | 2021-01-15 | 2021-07-23 | 电子科技大学 | full-GaN integrated gate drive circuit with dead time control |
| CN117318471A (en) * | 2023-11-28 | 2023-12-29 | 深圳库马克科技有限公司 | IGBT dead time compensation method, system, equipment and medium |
| CN117578902A (en) * | 2023-11-23 | 2024-02-20 | 南京航空航天大学 | Inverter circuit control method for realizing self-adaptive dead time optimization |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112183810A (en) * | 2020-08-19 | 2021-01-05 | 西安交通大学 | Electromagnetic interference prediction algorithm based on Miller platform effect |
| CN112183810B (en) * | 2020-08-19 | 2023-08-29 | 西安交通大学 | Electromagnetic interference prediction algorithm based on Miller platform effect |
| CN112803766A (en) * | 2020-12-09 | 2021-05-14 | 天津大学 | Dead zone optimization configuration method for gallium nitride power switch |
| CN113162373A (en) * | 2021-01-15 | 2021-07-23 | 电子科技大学 | full-GaN integrated gate drive circuit with dead time control |
| CN113162373B (en) * | 2021-01-15 | 2022-05-24 | 电子科技大学 | full-GaN integrated gate drive circuit with dead time control |
| CN113131723A (en) * | 2021-04-15 | 2021-07-16 | 中国矿业大学 | Half-bridge circuit dead zone optimization setting method suitable for enhanced gallium nitride device |
| CN117578902A (en) * | 2023-11-23 | 2024-02-20 | 南京航空航天大学 | Inverter circuit control method for realizing self-adaptive dead time optimization |
| CN117318471A (en) * | 2023-11-28 | 2023-12-29 | 深圳库马克科技有限公司 | IGBT dead time compensation method, system, equipment and medium |
| CN117318471B (en) * | 2023-11-28 | 2024-03-22 | 深圳库马克科技有限公司 | IGBT dead time compensation method, system, equipment and medium |
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