CN109765470A - The power semiconductor characteristic test method of temperature current controllable precise - Google Patents
The power semiconductor characteristic test method of temperature current controllable precise Download PDFInfo
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Abstract
The present invention provides a kind of power semiconductor characteristic test methods of temperature current controllable precise, comprising: switching characteristic test method, recovery characteristics test method and the on state characteristic test method of setting electric current power semiconductor at a temperature of.Test method include: to tested switching tube apply one group include three pulses test pulse sequence, in the turn-off characteristic of the failing edge test switching tube of first pulse；The loss of second impulse compensation load current；The on state characteristic of switching tube or diode is tested between first end-of-pulsing and three pulses start；In the turn-on characteristics of the rising edge test switching tube of third pulse and the recovery characteristics of diode；To reach the power semiconductor characteristic test effect of temperature current controllable precise.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular, to the power semiconductor of temperature current controllable precise
Characteristic test method.
Background technique
With the raising of power electronic devices rated capacity and the complication of working environment, power is partly led in
The requirement of body device reliability is also higher and higher.Power semiconductor as in power electronic system costly element and
Main heating source, is lost it and thermal characteristics carries out accurate modelling evaluation, is to improve power electronic equipment economy and safety
Important means.
The loss of power semiconductor and Thermal characteristic analysis need to establish its thermal impedance and loss model, it is therefore desirable to
Switch of power semiconductor under the conditions of various voltages, electric current, temperature and on state characteristic parameter are reproduced and tested.
But accurate power semiconductor characterisitic parameter is obtained, there is higher requirement: needs to test condition and test method
Power semiconductor voltage, load current, device temperature are adjustable when test；It needs to guarantee to extract switch and function when on state characteristic
The electric current and temperature of rate semiconductor devices are consistent with setting value；Due to the otherness of same model power semiconductor, need
Measure multiple devices and retest.
Existing technology generallys use dipulse test method and extracts to power semiconductor switching device characteristic, uses
I/V curve measurement instrument extracts power semiconductor on state characteristic.However there is load current, device in these methods
Temperature is inconvenient to adjust；Parasitic parameter is larger, and test condition and practical application difference are farther out；Switching characteristic and on state characteristic are tested
When electric current, temperature inaccuracy；Testing efficiency is low, can only once survey the switching characteristic or on state characteristic of a device；It is unable to test
In measured power semiconductor devices the problems such as the recovery characteristics of anti-paralleled diode.
Summary of the invention
For the defects in the prior art, the object of the present invention is to provide a kind of power of temperature current controllable precise partly to lead
Body device property test method.
The present invention provides a kind of power semiconductor characteristic test method of temperature current controllable precise, is used for test bag
The power semiconductor including switching tube and diode is included, and tests the switch of the power semiconductor under setting condition
Characteristic, recovery characteristics and on state characteristic；The described method includes:
Each test phase includes the test pulse sequence of N number of pulse to one group of tested switching tube application in tested module
Column, wherein N is the integer greater than 2；
The turn-off characteristic of the tested switching tube is tested in the failing edge of first pulse signal；
Between first pulse signal ends and n-th pulse signal start, the tested switching tube and/or two are tested
The on state characteristic of pole pipe；Pulse signal between first pulse signal and n-th pulse signal is for compensating test electric current
Loss；
The recovery of the on state characteristic and/or the diode of the tested switching tube is tested in the rising edge of n-th pulse
Characteristic.
Optionally, comprising: include at least one unit under test in the tested module, the unit under test is for simulating
The working condition of power semiconductor；It include by the power semiconductor including switching tube and diode in the unit under test
The full bridge structure for the arbitrary topology form that device is constituted and corresponding load blocks；
Wherein, the power semiconductor includes following any or appoints multiple features:
Including based on the power semiconductor including module, crimping, discrete encapsulation technology；
Including based on the semiconductor chip including silicon, silicon carbide, gallium nitride；
The load blocks include following any feature:
Pure inductive circuit；
Inductance, capacitor, resistance, mixed type electrical impedance network composed by transformer.
Optionally, described impose a condition includes: voltage conditions, current condition, temperature condition；Wherein:
The temperature condition includes: the temperature of the tested module adjusted by temperature control module；
The current condition includes: first pulse stopping when testing electric current and reaching setting value；N-th pulse is being tested
Electric current starts when reaching setting value.
Optionally, the pulse signal between first pulse signal and n-th pulse signal is used as compensated pulse signal
Because electric current caused by circuit parasitic parameter declines between first pulse signal of compensation and n-th pulse signal；When tested
When module temperature restores and maintains setting value, start to apply compensated pulse signal, when load current is in default range,
Stop applying compensated pulse.Optionally, further includes:
Under load current freewheeling state, the conduction voltage drop characteristic of diode in continuous current circuit is tested；
When load current is converted from freewheeling state to charging and discharging state, the recovery for testing the diode in continuous current circuit is special
Property；
Wherein, the charging and discharging state refers to: load current is flowed through by least one switching tube, load blocks, direct current
The closed circuit that potential source is constituted；
The freewheeling state refers to: load current flows through the closed circuit being made of a diode and load blocks, or
The closed circuit that person is made of a switching tube, a diode and load blocks.
Optionally, when unit under test includes full bridge structure, the conduction voltage drop characteristic of switching tube is tested；
The conduction voltage drop characteristic of the test switching tube, comprising:
Lasting open signal is applied at least one power semiconductor in unit under test, so that the tested list
Member is in load current freewheeling state, under the load current freewheeling state, detects power semiconductor in continuous current circuit
Conduction voltage drop characteristic.
Optionally, further includes:
According to the voltage and current value of the power semiconductor detected, the loss for calculating the power semiconductor is special
Property.
Optionally, according to the voltage and current value of the power semiconductor detected, the power semiconductor is calculated
Loss characteristic, comprising:
In the power semiconductor detected in switching process, to the voltage at power semiconductor both ends with flow through
The product of electric current the time is integrated, obtain the switching loss energy of the power semiconductor；
In the power semiconductor detected in turn on process, to the voltage at power semiconductor both ends with flow through
Electric current product, obtain the conduction loss of the power semiconductor；
In the diode detected in recovery process, to the voltage at power semiconductor both ends and the electric current that flows through
Product integrates the time, obtains the recovery loss of energy of the diode.
Compared with prior art, the present invention have it is following the utility model has the advantages that
1, the power semiconductor characteristic test method of temperature current controllable precise provided by the invention, test therein
Circuit structure is close with the common circuit topological structure of power semiconductor, so as to preferably carry out power semiconductor device
The loss test of part, characteristic of the obtained data closer to measured device under actual operating state.
2, the power semiconductor characteristic test method of temperature current controllable precise provided by the invention is, it can be achieved that multiple
Switching loss and on-state characteristic test of the measured device under the conditions of setting voltage, electric current, temperature.
3, the power semiconductor characteristic test method of temperature current controllable precise provided by the invention, can effectively reduce
Influence of the parasitic capacitance to the measured device switching process in the load, to obtain more accurate switching loss test knot
Fruit.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is the process of the power semiconductor characteristic test method of temperature current controllable precise provided by the invention
Figure；
Fig. 2 is the structural schematic diagram of the embodiment one of unit under test provided by the invention；
Fig. 3 is the structural schematic diagram of the embodiment two of unit under test provided by the invention；
Fig. 4 is power semiconductor characteristic test method embodiment provided by the invention one in a test period
The electric state of switching tube and its anti-paralleled diode, state of temperature and load current waveform figure；
Fig. 5 is power semiconductor characteristic test method embodiment provided by the invention in a switching tube test phase
Flow chart；
Fig. 6 is that power semiconductor characteristic test method embodiment provided by the invention is tested in a test period
The driving signal of all switching tubes and the waveform diagram of load current in module；
Fig. 7 is that power semiconductor characteristic test method embodiment provided by the invention is tested in a test period
The flow chart of all power semiconductor characteristics.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, several changes and improvements can also be made.These belong to the present invention
Protection scope.
Fig. 1 is the process of the power semiconductor characteristic test method of temperature current controllable precise provided by the invention
Figure.When unit under test is half-bridge structure, it is tested switching tube with the switching tube of not shunt load, in DC voltage and owns
Power semiconductor temperature stabilization successively issues N number of test pulse to tested switching tube under conditions of setting value, can be by
Sequence can successively measure the turn-off characteristic of tested switching tube, the conducting spy with the concatenated diode of tested switching tube in flow chart
Property and recovery characteristics and tested switching tube turn-on characteristics, i.e., completion a cycle.When unit under test is full bridge structure, four
A switching tube can be used as tested switching tube, can successively open as all switching tubes in tested switching tube test full bridge structure
The on state characteristic and recovery characteristics of characteristic and on state characteristic and all diodes are closed, Fig. 4-7 is i.e. with a kind of quilt of full bridge structure
It surveys for unit and N=3, specifically describes the implementation process of this method.
Fig. 2 is the structural schematic diagram of the embodiment one of unit under test provided by the invention, and Fig. 3 is provided by the invention tested
The structural schematic diagram of the embodiment two of unit.Wherein Fig. 2 is half-bridge structure, can be in test method test chart provided by the present invention
In DUT_L in the switching characteristic of switching tube and DUT_H diode on state characteristic and recovery characteristics, Diode_H and load in figure
Continuous current circuit is constituted, IGBT_L, load and DC voltage source constitute charging and discharging circuit；Fig. 3 is full-bridge circuit, can be mentioned by the present invention
In the test method test chart of confession the on state characteristic of the switching characteristic of all switching tubes and on state characteristic and all diodes and
Recovery characteristics, Diode_1H, load and DC voltage source constitute continuous current circuit in figure, and altogether there are four similar continuous current circuit,
IGBT_1H, load, IGBT_2L and DC voltage source constitute charging and discharging circuit, and there are two similar charging and discharging circuits altogether.
Fig. 4 is power semiconductor characteristic test method embodiment provided by the invention one in a test period
The electric state of switching tube and its anti-paralleled diode, state of temperature and load current waveform figure, Fig. 5 are provided by the invention
Flow chart of the power semiconductor characteristic test method embodiment in a switching tube test phase.Referring to fig. 4, Fig. 5, with one
For a switching tube IGBT_1H, wherein Diode_1H indicates that its anti-paralleled diode, waveform diagram and flow chart illustrate realization temperature
The principle that degree electric current is accurately tested.
As shown in figure 5, a test period is divided into the test rank that four-stage respectively corresponds four IGBT of full-bridge circuit
Section, first test phase IGBT_1H is measured device, applies three test pulses to it.Wherein first pulse pair answers 0-
The t1 stage turns off after load current is charged to setting value, can test the turn-off characteristic of IGBT_1H, ensure that electric current at this time
Accuracy, and maintain the shell temperature of IGBT_1H near setting value using the refrigerating function of temperature control module during the charging process,
The accuracy of temperature when ensure that test turn-off characteristic；The t1-t2 stage tests the on state characteristic of Diode_1L, stablizes each power half
The shell temperature of conductor device, the accuracy of temperature when ensure that test conduction characteristic；Second pulse pair answers the t2-t3 stage, is used for
Compensate parasitic parameter caused by load current be lost, by load current compensation to equal than or be slightly larger than setting value, due to parasitism join
It is lost smaller caused by number, the turn on process time of second pulse is shorter, and each power semiconductor range of temperature is not
Greatly；The t3-t4 stage tests the on state characteristic of IGBT_2L and stablizes the shell temperature of each power semiconductor, due to being tested at this time
Module is in freewheeling state, therefore current loss and temperature change are all smaller, temperature and electric current when ensure that test conduction characteristic
Accuracy；Third pulse pair answers t4-t5, and pulse is issued when load current drops to setting value, electricity when ensure that test
The accuracy of stream, in the turn-on characteristics of the rising edge test IGBT_1H of pulse and the recovery characteristics of Diode_1L, by t3-t4
Temperature stabilization process, the accuracy of temperature when ensure that test.
Fig. 6 is that power semiconductor characteristic test method embodiment provided by the invention is tested in a test period
The driving signal of all switching tubes and the waveform diagram of load current in module；Fig. 7 is power semiconductor device provided by the invention
Part characteristic test method embodiment tests the flow chart of all power semiconductor characteristics in a test period.
Referring to Fig. 6, Fig. 7, the 0-T1 stage: tested switching tube is IGBT_1H, IGBT_2L conducting, IGBT_1L and IGBT_2H
Shutdown, IGBT_1H receive three test pulses, and process as shown in Figure 2 successively tests the turn-off characteristic of IGBT_1H, IGBT_2L
The recovery characteristics of on state characteristic, the turn-on characteristics of IGBT_1H and Diode_1L.The T1-T2 stage: tested switching tube is IGBT_2H,
IGBT_1L conducting, IGBT_1H and IGBT_2L are turned off, and IGBT_2H receives three test pulses, and process as shown in Figure 3 is successively surveyed
Try the turn-off characteristic of IGBT_2H, the on state characteristic of IGBT_1L, the turn-on characteristics of IGBT_2H and the recovery characteristics of Diode_2L.
The T2-T3 stage: tested switching tube is IGBT_2L, and IGBT_1H conducting, IGBT_1L and IGBT_2H shutdown, IGBT_2L receive three
A test pulse, process as shown in Figure 3 successively test the turn-off characteristic of IGBT_2L, the on state characteristic of IGBT_1H, IGBT_2L
The recovery characteristics of turn-on characteristics and Diode_2H.The T3-T4 stage: tested switching tube is IGBT_1L, IGBT_2H conducting, IGBT_
1H and IGBT_2L is turned off, and IGBT_1L receives three test pulses, and the shutdown that process as shown in Figure 3 successively tests IGBT_1L is special
Property, the recovery characteristics of the turn-on characteristics of the on state characteristic of IGBT_2H, IGBT_1L and Diode_1H.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or modify within the scope of the claims, this not shadow
Ring substantive content of the invention.In the absence of conflict, the feature in embodiments herein and embodiment can any phase
Mutually combination.
Claims (8)
1. a kind of power semiconductor characteristic test method of temperature current controllable precise, which is characterized in that be used for test bag
The power semiconductor including switching tube and diode is included, and tests the switch of the power semiconductor under setting condition
Characteristic, recovery characteristics and on state characteristic；The described method includes:
Each test phase includes the test pulse sequence of N number of pulse to one group of tested switching tube application in tested module,
Middle N is the integer greater than 2；
The turn-off characteristic of the tested switching tube is tested in the failing edge of first pulse signal；
Between first pulse signal ends and n-th pulse signal start, the tested switching tube and/or diode are tested
On state characteristic；Pulse signal between first pulse signal and n-th pulse signal is used for the loss of compensating test electric current；
The on state characteristic of the tested switching tube and/or the recovery characteristics of the diode are tested in the rising edge of n-th pulse.
2. the power semiconductor characteristic test method of temperature current controllable precise according to claim 1, feature
It is, comprising: include at least one unit under test in the tested module, the unit under test is used for simulated power semiconductor
The working condition of device；It include to be made of the power semiconductor including switching tube and diode in the unit under test
Arbitrary topology form full bridge structure and corresponding load blocks；
Wherein, the power semiconductor includes following any or appoints multiple features:
Including based on the power semiconductor including module, crimping, discrete encapsulation technology；
Including based on the semiconductor chip including silicon, silicon carbide, gallium nitride；
The load blocks include following any feature:
Pure inductive circuit；
Inductance, capacitor, resistance, mixed type electrical impedance network composed by transformer.
3. the power semiconductor characteristic test method of temperature current controllable precise according to claim 1, feature
It is, the setting condition includes: voltage conditions, current condition, temperature condition；Wherein:
The temperature condition includes: the temperature of the tested module adjusted by temperature control module；
The current condition includes: first pulse stopping when testing electric current and reaching setting value；N-th pulse is in test electric current
Start when reaching setting value.
4. the power semiconductor characteristic test method of temperature current controllable precise according to claim 1, feature
It is, the pulse signal between first pulse signal and n-th pulse signal is as compensated pulse signal, for compensating first
Because electric current caused by circuit parasitic parameter declines between a pulse signal and n-th pulse signal；When tested module temperature is extensive
When redoubling maintains setting value, start to apply compensated pulse signal, when load current is in default range, stops applying and mend
Repay pulse.
5. the power semiconductor characteristic test method of temperature current controllable precise according to claim 1, feature
It is, further includes:
Under load current freewheeling state, the conduction voltage drop characteristic of diode in continuous current circuit is tested；
When load current is converted from freewheeling state to charging and discharging state, the recovery characteristics of the diode in continuous current circuit are tested；
Wherein, the charging and discharging state refers to: load current is flowed through by least one switching tube, load blocks, DC voltage source
The closed circuit of composition；
The freewheeling state refers to: load current flows through the closed circuit being made of a diode and load blocks, Huo Zheyou
The closed circuit that one switching tube, a diode and load blocks are constituted.
6. the power semiconductor characteristic test method of temperature current controllable precise according to claim 2, feature
It is, when unit under test includes full bridge structure, tests the conduction voltage drop characteristic of switching tube；
The conduction voltage drop characteristic of the test switching tube, comprising:
Lasting open signal is applied at least one power semiconductor in unit under test, so that at the unit under test
In load current freewheeling state, under the load current freewheeling state, the conducting of power semiconductor in continuous current circuit is detected
Drooping characteristic.
7. the power semiconductor characteristic test method of temperature current controllable precise according to claim 1, feature
It is, further includes:
According to the voltage and current value of the power semiconductor detected, the loss characteristic of the power semiconductor is calculated.
8. the power semiconductor characteristic test method of temperature current controllable precise according to claim 7, feature
It is: according to the voltage and current value of the power semiconductor detected, calculates the loss characteristic of the power semiconductor,
Include:
In the power semiconductor detected in switching process, to the voltage at power semiconductor both ends and the electricity that flows through
The product of stream integrates the time, obtains the switching loss energy of the power semiconductor；
In the power semiconductor detected in turn on process, to the voltage at power semiconductor both ends and the electricity that flows through
The product of stream obtains the conduction loss of the power semiconductor；
In the diode detected in recovery process, to the product of the voltage and the electric current flowed through at power semiconductor both ends
Time is integrated, the recovery loss of energy of the diode is obtained.
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| CN112986779A (en) * | 2021-02-08 | 2021-06-18 | 厦门市三安集成电路有限公司 | Reliability testing device and method for gallium nitride device |
| CN113253085A (en) * | 2021-05-18 | 2021-08-13 | 合肥恒钧检测技术有限公司 | Power cycle test method and system for power semiconductor device |
| CN113759229A (en) * | 2021-09-13 | 2021-12-07 | 上海交通大学 | Power semiconductor switching loss measurement method and system based on temperature measurement |
| CN113866582A (en) * | 2021-08-27 | 2021-12-31 | 北京工业大学 | Method for detecting instantaneous burnout resistance of power device switch |
| CN114441924A (en) * | 2022-04-11 | 2022-05-06 | 山东阅芯电子科技有限公司 | Narrow pulse conduction voltage drop test method and circuit suitable for power semiconductor device |
| CN115113014A (en) * | 2022-08-29 | 2022-09-27 | 华北电力大学 | Power device turn-off failure characteristic testing device and testing method |
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| CN112147478A (en) * | 2020-08-07 | 2020-12-29 | 北京交通大学 | Wide bandgap semiconductor power device parameter test platform and method |
| CN112255537A (en) * | 2020-10-13 | 2021-01-22 | 南京大学 | Gallium nitride triode switch test circuit and test method |
| CN112255537B (en) * | 2020-10-13 | 2022-03-25 | 南京大学 | Gallium nitride triode switch test circuit and test method |
| CN112986779A (en) * | 2021-02-08 | 2021-06-18 | 厦门市三安集成电路有限公司 | Reliability testing device and method for gallium nitride device |
| CN113253085A (en) * | 2021-05-18 | 2021-08-13 | 合肥恒钧检测技术有限公司 | Power cycle test method and system for power semiconductor device |
| CN113866582A (en) * | 2021-08-27 | 2021-12-31 | 北京工业大学 | Method for detecting instantaneous burnout resistance of power device switch |
| CN113866582B (en) * | 2021-08-27 | 2024-06-04 | 北京工业大学 | Method for detecting instant burnout resistance of power device switch |
| CN113759229A (en) * | 2021-09-13 | 2021-12-07 | 上海交通大学 | Power semiconductor switching loss measurement method and system based on temperature measurement |
| CN114441924A (en) * | 2022-04-11 | 2022-05-06 | 山东阅芯电子科技有限公司 | Narrow pulse conduction voltage drop test method and circuit suitable for power semiconductor device |
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| CN115113014A (en) * | 2022-08-29 | 2022-09-27 | 华北电力大学 | Power device turn-off failure characteristic testing device and testing method |
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