CN113866582A - Method for detecting instantaneous burnout resistance of power device switch - Google Patents
Method for detecting instantaneous burnout resistance of power device switch Download PDFInfo
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- CN113866582A CN113866582A CN202110992743.1A CN202110992743A CN113866582A CN 113866582 A CN113866582 A CN 113866582A CN 202110992743 A CN202110992743 A CN 202110992743A CN 113866582 A CN113866582 A CN 113866582A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention discloses a method for detecting instantaneous burnout resistance of a power device switch, and belongs to the technical field of semiconductor device test reliability. The method and the device are mainly applied to the evaluation of the anti-burning capacity of the device at the moment when the power device is turned on and turned off, thereby guiding and improving the reliability of the device. Firstly, by applying grid voltage or on-state voltage drop lower than a blind point, controlling a power device to be in an on-resistance negative temperature coefficient region, and simulating working conditions such as capacitive load opening and inductive load closing; then, a group of controllable incremental pulse signals are applied to the device to simulate the power consumption and the hot spot forming condition of the device at the moment of turning on and off the device, so that the transient burnout resistance of the power device is quantitatively evaluated, and the worst condition of the device for resisting transient failure is explored. The invention can also be used for evaluating the transient burnout resistance of the power device under other working conditions.
Description
Technical Field
The invention relates to a method for detecting instantaneous burnout resistance of a power device switch. The method adopts the electronic circuit control to accurately measure the overshoot current generated at the moment of switching the semiconductor device under different working conditions in real time, and forms a method for evaluating the transient burnout resistance of the device, belonging to the technical field of the test reliability of the semiconductor device. The method is mainly applied to the evaluation of the anti-burning capacity of the power device at the moment of turning on and off the power device, and can evaluate the anti-transient burning capacity of the power device under multiple working conditions, so that the reliability of the power device is improved.
Background
In recent years, the performance of power devices is continuously upgraded, and power devices such as Si/SiC MOSFETs have excellent performances such as large input impedance, high blocking withstand voltage, and small conduction loss, and are widely applied to the fields of smart grids, electric energy conversion, new energy vehicles, and the like. Along with the improvement of the performance of a plurality of power devices, the application field of the power devices is continuously expanded, the types of carried loads are continuously increased, the capacitive loads are more and more widely applied, and the reliability problem of the power devices is more and more obvious. For example, when the device carries a capacitive load, the power devices such as the Si/SiC MOSFET are turned on, and when the control electric energy is transmitted to the capacitive load, the whole loop is momentarily short-circuited, and surge current is generated to flow through the power devices, which may cause damage or even burnout of the power devices and the power system. However, in order to reduce the surge current peak caused by the capacitive load when the power device is turned on, a slow power device is often turned on. However, although the peak value of the instantaneous surge current is reduced, the power device is turned on slowly, the duration is increased, the temperature rise of a chip of the power device is increased, and accordingly the power device is burnt more seriously.
The technology of the invention can be applied to common power devices such as Si/SiC MOSFET, IGBT, FRD and the like, and the characteristic of the instantaneous burnout resistance of the switch under special working conditions such as capacitive load and the like. The measuring method is simple and accurate, and is suitable for the fields of production, reliability and performance research of electronic devices and device development.
Because the method evaluates the transient failure mode of the power device under the common working condition, the method is different from the traditional method for measuring the reliability of the on-state device, has more targeted suggestion for evaluating the reliability of the power device, and has good advancement.
Disclosure of Invention
Aiming at the problems, the invention aims to solve the problem of representing the on-off transient anti-burning capability of power semiconductor devices such as Si/SiC MOSFET, IGBT, FRD and the like under the practical working conditions such as capacitive load and the like, and is beneficial to solving and evaluating the reliability problem of switching transient power devices during practical work, thereby improving the reliability of the power devices.
The main invention points of the invention are that: firstly, by applying grid voltage or on-state voltage drop lower than a blind point, controlling a power device to be in an on-resistance negative temperature coefficient region, and simulating working conditions such as capacitive load opening and inductive load closing; then, a group of controllable incremental pulse signals are applied to the device to simulate the power consumption and the hot spot forming condition of the device at the moment of turning on and off the device, so that the transient burnout resistance of the power device is quantitatively evaluated, and the worst condition of the device for resisting transient failure is explored. The invention can also be used for evaluating the transient burnout resistance of the power device under other working conditions. The method has guiding significance for improving the reliability of the power device.
The working principle of the method of the invention is as follows:
when the power device is turned on and operated, the gate voltage value is higher than the blind-spot gate voltage, as shown in a region 02 of fig. 2, and the instant of turning on and off passes through a low gate voltage region, as shown in a region 01 of fig. 2. The on-resistance of the power device in the low gate voltage area presents a negative temperature coefficient, and in addition, the transient heat capacity, the transient heat resistance and other worse transient heat dissipation conditions are presented, so that the on-off of the power device instantly presents a phenomenon that the resistance is smaller when the temperature is higher, the current is gathered to cause intrinsic excitation, and finally, the hot spot burning phenomenon is generated, and the mechanism and the phenomenon are greatly different from the steady burning phenomenon under the device conduction.
The burning-out condition exists in the transient switching state of power semiconductor devices such as Si/SiC VDMOS, IGBT, FRD and the like, for example, at the switching moment with capacitive load working, the voltage applied to the device grid is lower than the blind point grid voltage, and due to the common effect of the negative temperature characteristic of the on-resistance under the low grid voltage and the charging of the load capacitor, a current overshoot which is several times of the steady-state working current is generated at the switching-on moment of the device, namely, the surge current, so that the device is burnt out. The burning-out is essentially because the transient thermal power is too high, and therefore, the controllable low grid voltage pulse or source-drain voltage/current pulse is applied through simulating the physical characteristics of the device at the moment of opening, so that the controllable power pulse is applied to the power device to control the transient thermal power of the device, the upper limit of the transient burning-out of the power device is continuously searched, and the method and the standard for detecting the burning-out resistance of the power device at the moment of opening and closing are further formed.
Drawings
FIG. 1 is a schematic diagram of the apparatus of the present invention.
The names corresponding to the numbers in the figure are as follows:
101 signal generator 102 surge catching circuit 103 load circuit
201 voltage source 202 voltage source
301 oscilloscope current detector 302 oscilloscope voltage detector
401 driving circuit 402 power device to be tested
Fig. 2 is a schematic diagram of a grid voltage blind spot.
Fig. 3 is an exemplary diagram of the input gate voltage signal.
The electrical signals captured in FIG. 4 are schematic.
Detailed Description
The method for detecting the instantaneous burning-resistant capability of the switch of the power semiconductor device takes capacitive load and pulse signals on a controllable grid as examples. The method mainly comprises the following steps:
the method comprises the following steps: the surge current capture circuit 102 capable of controlling the grid voltage of the device is built, the circuit is required to meet the physical working condition of the power device at the moment of switching on and switching off, namely, the capacitive load is controllable in grid voltage, and the grid voltage control requirement is as follows: low grid voltage and high frequency controllable pulse.
Step two: the method comprises the steps of connecting a signal generator 101 with a surge current generating circuit 102, connecting a power device 402 to be tested with a surge capture circuit 102, connecting a voltage detector 302 of an oscilloscope with a grid electrode of the device 402 to be tested, connecting a current detector 301 of the oscilloscope with a loop formed by the device 402 to be tested, connecting a load circuit 103 with the surge capture circuit 102, connecting a driving power supply module 201 with a driving circuit 401, connecting a load loop power supply module 202 with the power device 402 to be tested and the load loop 103 formed by the power device 402 to be tested, and checking whether the connection of all parts is correct.
Step three: and starting the signal generator 101, controlling the power device to be in a low-grid-voltage working area under the capacitive load, giving a controllable low-grid-voltage pulse or source-drain voltage/current pulse to the device to start the device, capturing electrical parameters in the process, reading numerical values of the oscilloscope current detector 301 and the oscilloscope voltage detector 302, and calculating the thermal power at the moment of surge starting by combining a formula.
Step four: and closing the grid voltage signal, standing for 10 minutes, repeating the operation after the thermal characteristics of the device are recovered to the normal room temperature level, and taking a fixed pulse time as a step or gradually prolonging the pulse width of the small pulse signal according to the requirement according to the capturing result so as to continuously monitor the thermal power change condition of the power device at the moment of opening and closing.
Step five: under the condition of continuously prolonged grid voltage pulse signals, the experiment is continuously repeated until the device is burnt out and fails, namely the change of related electrical parameters exceeds a specified change range, the failure of the device can be judged, and thus a standard and a specification for starting the transient anti-burning capability of the power device under the capacitive load are formed. And the method can also be used for evaluating the transient burnout resistance of the power device under other working conditions.
Claims (5)
1. A method for detecting the instantaneous burning-resistant capability of a power device switch is characterized by comprising the following steps: the method comprises the following steps: the surge current capture circuit capable of controlling the grid voltage of the device is built, the circuit can meet the physical working condition of the power device at the moment of switching on and off, namely, the capacitive load and the grid voltage are controllable, and the grid voltage control requirement is as follows: low grid voltage and high frequency controllable pulse;
step two: connecting a signal generator with a surge current generation circuit, connecting a power device to be tested with a surge capture circuit, connecting a voltage detector of an oscilloscope with a grid electrode of the device to be tested, connecting a current detector of the oscilloscope with a loop formed by the device to be tested, connecting a load circuit with the surge capture circuit, connecting a driving power supply module with a driving circuit, connecting a load loop power supply module with the power device to be tested and a load loop formed by the power device to be tested, and checking that all parts are connected without errors;
step three: starting a signal generator, controlling a power device to be in a low grid voltage working area under a capacitive load, giving a controllable low grid voltage pulse or source-drain voltage/current pulse to the device to start the device, capturing electrical parameters in the process, reading numerical values of an oscilloscope current detector and an oscilloscope voltage detector, and calculating thermal power at the moment of surge starting by combining a formula;
step four: closing the grid voltage signal, standing, repeating the operation after the thermal characteristics of the device are recovered to the normal room temperature level, and taking a fixed pulse time as a step or gradually prolonging the pulse width of the small pulse signal according to the requirement of a capture result so as to continuously monitor the thermal power change condition of the power device at the moment of opening and closing;
step five: repeating the experiment under the continuously prolonged grid voltage pulse signal until the device is burnt out and fails, namely the change of the related electrical parameters exceeds the specified change range, and judging that the device fails, thereby forming a standard and specification for starting the transient anti-burning capability of the power device under the capacitive load; the method is used for evaluating the transient burnout resistance of the power device under other working conditions.
2. The method for detecting the instantaneous burnout resistance of the power device switch according to claim 1, wherein: applying a grid voltage lower than a blind spot or a current lower than the blind spot to the device to ensure that the on-resistance of the power device is in a negative temperature characteristic region at the moment; controllable power pulse is applied to the power device by applying controllable low gate voltage pulse or source-drain voltage/current pulse; and exploring the upper limit of the transient burnout resistance of the device by continuously prolonging the pulse width of the pulse, and further quantitatively evaluating the transient burnout resistance of the capacitive load of the power device.
3. The method for detecting the instantaneous burnout resistance of the power device switch according to claim 1, wherein: the power consumption and the hot spot forming condition at the moment of switching on and switching off the device are simulated by applying a group of controllable incremental pulse signals to the device, so that the transient burnout resistance of the power device is quantitatively evaluated.
4. The method for detecting the instantaneous burnout resistance of the power device switch according to claim 1, wherein: the power device works in a low grid voltage area lower than a blind spot, and a source-drain voltage value is read through a voltage source during testing; measuring the overcharge current value by an oscilloscope current detector; and the oscilloscope voltage detector measures a real-time grid voltage value so as to obtain the transient thermal power of the device.
5. The method for detecting the instantaneous burnout resistance of the power device switch according to claim 1, wherein: controllable low grid voltage pulse or source-drain voltage/current pulse is applied to the power device under the capacitive load, and the form of the pulse signal is not limited and is square wave, sine wave or triangular wave.
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| KR19980029467A (en) * | 1996-10-26 | 1998-07-25 | 이종수 | Evaluation method of thermal stability of power semiconductor device for inverter |
| US20030090271A1 (en) * | 2001-11-13 | 2003-05-15 | Hurwicz Maxim D. | Portable circuit interrupter shutoff testing device and method |
| CN103344897A (en) * | 2013-06-09 | 2013-10-09 | 中国空间技术研究院 | Non-destructive power MOS tube single-event burnout effect detecting circuit and non-destructive power MOS tube single-event burnout effect detecting method |
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