CN103248255A - Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof - Google Patents
Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof Download PDFInfo
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- CN103248255A CN103248255A CN2013101985063A CN201310198506A CN103248255A CN 103248255 A CN103248255 A CN 103248255A CN 2013101985063 A CN2013101985063 A CN 2013101985063A CN 201310198506 A CN201310198506 A CN 201310198506A CN 103248255 A CN103248255 A CN 103248255A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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Abstract
A tri-phase modular multi-level converter and a fault-tolerate detecting method for an IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof belong to the field of electronics and aim to solve the problem that the whole machine cannot work caused by the open circuit fault of the existing MMC. The invention adopts a method of connecting two hemi-bridge power units in parallel in each sub-module of the converter, and the IGBT with the open circuit can be positioned by measuring the output voltage UA of the sub-modules and simultaneously applying a certain phase shift control on the IGBTs in the two hemi-bridge power units in at most half alternating current period, and the modular multi-level converter can be continuously operated when any IGBT in any sub-module is subjected to open circuit fault, thus solving the problem of low reliability and frequent halt for repairing of the traditional modular multi-level converter. In addition, the conducting loss of the IGBT can be reduced due to the parallel connecting work mode of the power units and the converting efficiency of the electric energy of the converter is improved.
Description
Technical field
The present invention relates to IGBT open fault detection fault-tolerance approach in three-phase modular multilevel inverter and the submodule thereof, belong to field of power electronics.
Background technology
In recent years, (Modular Multilevel Converter's modular multilevel converter MMC) receives much concern in the high-power field.Its topological structure is piled up by the identical submodule of a plurality of structures and forms, each submodule is made of a half-bridge topology and a capacitor, can expand to high-tension high-power neatly by increasing the submodule number, and its power component can be operated in lower switching frequency, possess very high energy conversion efficiency, very little Voltage and Current Spikes, and advantage such as low-down harmonic wave of output voltage content, make it be very suitable for the occasion that high pressure large power, electrically such as flexible DC power transmission can conversion.
The power component of modularization multi-level converter adopts the cost performance height usually, controls insulated gate bipolar transistor (IGBT) flexibly, the IGBT that is most widely used at present is the bonding line style encapsulation of employing pressure welding lead-in wire technology, and it often is owing to go between by the open circuit that causes after the electric current scorification that the IGBT of this encapsulation damages.And in modularization multi-level converter, the open fault of arbitrary IGBT all can cause complete machine to work in arbitrary submodule.Though the failure rate of each IGBT is very low, MMC will contain hundreds and thousands of IGBT when high-power, and its failure rate raises greatly, and this just causes the reliability of MMC converter low, maintenance cost is expensive.
Summary of the invention
The present invention seeks in order to solve the structure that existing MMC adopts a half-bridge topology and a capacitor, the open fault of arbitrary IGBT all can cause complete machine to work in arbitrary submodule, the problem that cause the reliability of MMC low, maintenance cost is expensive provides IGBT open fault detection fault-tolerance approach in a kind of three-phase modular multilevel inverter and the submodule thereof.
Three-phase modular multilevel inverter of the present invention, it comprises that A goes up brachium pontis, A mutually and descends brachium pontis, B to go up brachium pontis, B mutually mutually to descend brachium pontis, C to go up brachium pontis mutually mutually to descend brachium pontis mutually with C,
A goes up brachium pontis, A mutually and descends brachium pontis, B to go up brachium pontis, B mutually mutually to descend brachium pontis, C to go up brachium pontis and C mutually mutually to descend brachium pontis to constitute the three phase full bridge topological structure mutually, and each brachium pontis is followed in series to form by n submodule and inductor L, and n is the positive integer more than or equal to 2;
A goes up the cathode output end of brachium pontis mutually, the cathode output end that B goes up brachium pontis mutually links to each other with the cathode output end that C goes up brachium pontis mutually, and as the positive terminal of three-phase modular multilevel inverter;
A descends the cathode output end of brachium pontis, the cathode output end that B descends brachium pontis mutually to descend the cathode output end of brachium pontis to link to each other mutually with C mutually, and as the negative pole end of three-phase modular multilevel inverter;
The inductor L that A goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with A mutually, and connects the A phase of three-phase alternating-current supply;
The inductor L that B goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with B mutually, and connects the B phase of three-phase alternating-current supply;
The inductor L that C goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with C mutually, and connects the C phase of three-phase alternating-current supply;
Each submodule is made up of first power cell 1, second power cell 2 and capacitor C, and first power cell 1 comprises the first igbt transistor S1 and the second igbt transistor S2; Second power cell 2 comprises the 3rd igbt transistor S3 and the 4th igbt transistor S4;
The collector electrode of the first igbt transistor S1 links to each other with the collector electrode of the 3rd igbt transistor S3 and an end of capacitor C simultaneously;
The emitter of the first igbt transistor S1 connects the collector electrode of the second igbt transistor S2;
The emitter of the 3rd igbt transistor S3 connects the collector electrode of the 4th igbt transistor S4;
The emitter of the second igbt transistor S2 links to each other with the emitter of the 4th igbt transistor S4 and the other end of capacitor C simultaneously, and as the negative pole end of submodule;
The connecting line of the emitter of the emitter of the first igbt transistor S1 and the 3rd igbt transistor S3 is as the positive terminal of submodule;
The first igbt transistor S1, the second igbt transistor S2, the 3rd igbt transistor S3 and the 4th igbt transistor S4 are the IGBT of band inverse parallel diode.
The IGBT open fault detects fault-tolerance approach in the submodule of described three-phase modular multilevel inverter, and this method may further comprise the steps:
The driving signal of four IGBT in step 1, each submodule is S1 gate driving pulse u
G1, S2 gate driving pulse u
G2, S3 gate driving pulse u
G3With S4 gate driving pulse u
G4,
u
G1High level lasting time be T
On-1, u
G3High level lasting time be T
On-3, T
On-1=T
On-3,
u
G2High level lasting time be T
On-2, u
G4High level lasting time be T
On-4, T
On-2=T
On-4,
u
G1And u
G3Low duration be T
On-2+ 2 △ T,
△ T is working alone the time of single IGBT,
u
G2And u
G4Low duration be T
On-1+ 2 △ T,
u
G3Than u
G1Delay △ T, u
G4Than u
G2Delay △ T,
u
G1The corresponding u of rising edge
G4Trailing edge, u
G2The corresponding u of rising edge
G3Trailing edge;
If described U
AWhen not waiting with theoretical value, can judge that open fault has taken place this IGBT, execution in step three;
If described U
AWhen equating with theoretical value, can judge that this IGBT does not have open fault, returns execution in step two;
Whether step 3, the judgement IGBT in parallel with the described open fault IGBT of step 2 have open fault,
If IGBT in parallel has open fault, then block the driving signal of all IGBT in the three-phase modular multilevel inverter, system enters the stoppage protection state;
If IGBT in parallel does not have open fault, execution in step four,
Step 5, send fault indication signal so that the attendant carries out maintain and replace, change the IGBT of open fault is arranged after, return execution in step one.
Advantage of the present invention: the present invention compares with traditional modular multilevel converter; identical power cell in parallel again on the basis of original half-bridge power unit; output voltage and certain phase shifting control by detection sub-module can be oriented the IGBT that open fault takes place fast; and converter can be in any submodule any one IGBT continue fault-tolerant operation when open fault takes place, solved traditional modular multilevel converter reliability low, often need the problem of shutdown maintenance.In addition, the form of power cell parallel connection has reduced the current stress of IGBT, can reduce its conduction loss simultaneously, improves the efficient of MMC transformation of electrical energy.
Description of drawings
Fig. 1 is the topology diagram of three-phase modular multilevel inverter of the present invention;
Fig. 2 is the submodule topology diagram of three-phase modular multilevel inverter of the present invention;
Fig. 3 is the driving signal distribution diagram of each IGBT of submodule of the present invention;
Fig. 4 to Fig. 7 is the state diagram of different I GBT open circuit in the submodule;
Fig. 8 detects S
1The driving signal distribution diagram of each IGBT of submodule behind the open fault.
Embodiment
Embodiment one: present embodiment is described below in conjunction with Fig. 1 and Fig. 2, the IGBT open fault detects fault-tolerance approach in the described three-phase modular multilevel inverter of present embodiment and the submodule thereof, it comprises that A goes up brachium pontis, A mutually and descends brachium pontis, B to go up brachium pontis, B mutually mutually to descend brachium pontis, C to go up brachium pontis mutually mutually to descend brachium pontis mutually with C
A goes up brachium pontis, A mutually and descends brachium pontis, B to go up brachium pontis, B mutually mutually to descend brachium pontis, C to go up brachium pontis and C mutually mutually to descend brachium pontis to constitute the three phase full bridge topological structure mutually, and each brachium pontis is followed in series to form by n submodule and inductor L, and n is the positive integer more than or equal to 2;
A goes up the cathode output end of brachium pontis mutually, the cathode output end that B goes up brachium pontis mutually links to each other with the cathode output end that C goes up brachium pontis mutually, and as the positive terminal of three-phase modular multilevel inverter;
A descends the cathode output end of brachium pontis, the cathode output end that B descends brachium pontis mutually to descend the cathode output end of brachium pontis to link to each other mutually with C mutually, and as the negative pole end of three-phase modular multilevel inverter;
The inductor L that A goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with A mutually, and connects the A phase of three-phase alternating-current supply;
The inductor L that B goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with B mutually, and connects the B phase of three-phase alternating-current supply;
The inductor L that C goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with C mutually, and connects the C phase of three-phase alternating-current supply;
Each submodule is made up of first power cell 1, second power cell 2 and capacitor C, and first power cell 1 comprises the first igbt transistor S1 and the second igbt transistor S2; Second power cell 2 comprises the 3rd igbt transistor S3 and the 4th igbt transistor S4;
The collector electrode of the first igbt transistor S1 links to each other with the collector electrode of the 3rd igbt transistor S3 and an end of capacitor C simultaneously;
The emitter of the first igbt transistor S1 connects the collector electrode of the second igbt transistor S2;
The emitter of the 3rd igbt transistor S3 connects the collector electrode of the 4th igbt transistor S4;
The emitter of the second igbt transistor S2 links to each other with the emitter of the 4th igbt transistor S4 and the other end of capacitor C simultaneously, and as the negative pole end of submodule;
The connecting line of the emitter of the emitter of the first igbt transistor S1 and the 3rd igbt transistor S3 is as the positive terminal of submodule;
The first igbt transistor S1, the second igbt transistor S2, the 3rd igbt transistor S3 and the 4th igbt transistor S4 are the IGBT of band inverse parallel diode.
Embodiment two: below in conjunction with Fig. 3 to Fig. 8 present embodiment is described, the IGBT open fault detects fault-tolerance approach in the submodule of execution mode one described three-phase modular multilevel inverter, and this method may further comprise the steps:
The driving signal of four IGBT in step 1, each submodule is S1 gate driving pulse u
G1, S2 gate driving pulse u
G2, S3 gate driving pulse u
G3With S4 gate driving pulse u
G4,
u
G1High level lasting time be T
On-1, u
G3High level lasting time be T
On-3, T
On-1=T
On-3,
u
G2High level lasting time be T
On-2, u
G4High level lasting time be T
On-4, T
On-2=T
On-4,
u
G1And u
G3Low duration be T
On-2+ 2 △ T,
△ T is working alone the time of single IGBT,
u
G2And u
G4Low duration be T
On-1+ 2 △ T,
u
G3Than u
G1Delay △ T, u
G4Than u
G2Delay △ T,
u
G1The corresponding u of rising edge
G4Trailing edge, u
G2The corresponding u of rising edge
G3Trailing edge;
If described U
AWhen not waiting with theoretical value, can judge that open fault has taken place this IGBT, execution in step three;
If described U
AWhen equating with theoretical value, can judge that this IGBT does not have open fault, returns execution in step two;
Whether step 3, the judgement IGBT in parallel with the described open fault IGBT of step 2 have open fault,
If IGBT in parallel has open fault, then block the driving signal of all IGBT in the three-phase modular multilevel inverter, system enters the stoppage protection state;
If IGBT in parallel does not have open fault, execution in step four,
Step 5, send fault indication signal so that the attendant carries out maintain and replace, change the IGBT of open fault is arranged after, return execution in step one.
As shown in Figure 3, drive in the signal distribution diagram signal U at the submodule power cell
ABe the output voltage waveforms of submodule, wherein T
On-ABeing the effective impulse width that control system is sent, also is U in the switch periods
AEqual condenser voltage U
CTime, T
Off-ABe U
AEqual for 0 time, then S
1With S
3ON time T
On-1=T
On-3=T
On-A-△ T, S
2With S
4ON time T
On-2=T
On-4=T
Off-A-△ T(is owing to the ratio that Dead Time accounts for whole switch periods is very little, so here it is ignored).Thereby in a switch periods, there be working alone the time of a Δ T in each IGBT, namely at this moment between in the whole submodule only this IGBT be in opening state.In addition since time Δ T to compare whole switch periods very short, so two power cell mosts of the time are at common loaded current, reduced the current stress of each power cell, and guaranteed lower conduction loss.
Be the modularization multi-level converter of half-bridge topology at sub modular structure, according to current driving signal and brachium pontis current i
ADirection (rated current i
AFlowing out submodule is its positive direction), output voltage U
ASeveral working conditions as shown in table 1 are arranged:
Table 1IGBT open fault testing mechanism
The detection method of present embodiment open fault is: in the time that works alone of each IGBT Δ T, and the output voltage U of detection sub-module
AWhen the equal operate as normal of all IGBT, U in the time that works alone of S1 and S3
ATo equal capacitance voltage U
C, and in the time that works alone of S2 and S4 U
ATo be 0.In case detected U
AWhen not waiting with the value of operate as normal in the table 1, can judge the current IGBT that is in conducting state open fault has taken place, concrete condition such as Fig. 4 are to (because it is open-minded to have only an IGBT to trigger when detecting, so all the other IGBT can be reduced to the inverse parallel diode) shown in Figure 7:
(1) in the time that works alone of S1, S only
1Open-minded, when the brachium pontis current i
A0 o'clock, if S
1There is open fault, as shown in Figure 4, brachium pontis current i then
AWill be from S
2With S
4The inverse parallel diode flow through, cause U
A=0.
(2) in the time that works alone of S3, S only
3Open-minded, when the brachium pontis current i
A0 o'clock, if S
3There is open fault, as shown in Figure 5, brachium pontis current i then
AWill be from S
2With S
4The inverse parallel diode flow through, cause U
A=0.
(3) in the time that works alone of S2, S only
2Open-minded, when the brachium pontis current i
A＜0 o'clock, if S
2There is open fault, as shown in Figure 6, brachium pontis current i then
AWill be from S
1With S
3The inverse parallel diode flow through, cause U
A=U
C
(4) in the time that works alone of S4, S only
4Open-minded, when the brachium pontis current i
A＜0 o'clock, if S
4There is open fault, as shown in Figure 7, brachium pontis current i then
AWill be from S
1With S
3The inverse parallel diode flow through, cause U
A=U
C
Adopt the detection method of present embodiment, when open fault takes place certain IGBT, at most only need half ac cycle (to wait for the brachium pontis current i
AThe anti-phase required time at most) can detect this fault.
Behind the IGBT that detects open circuit, block the driving signal of this fault IGBT, the ON time of IGBT that will be in parallel with it increases Δ T simultaneously, thereby guarantees U
AVoltage waveform is constant, and modularization multi-level converter still can work on.For example when detecting after open fault appears in S1, adjust the driving signal of IGBT, as shown in Figure 8, make T
On-1=0, that in parallel with S1 is S3, and then the high level of S3 gate driving pulse increases Δ T, i.e. T
On-3=(T
On-A-△ T)+△ T=T
On-A, and T
On-2And T
On-4Remain unchanged.Simultaneously, send fault indication signal, so that the attendant carries out maintain and replace, the IGBT of non-fault will continue to carry out open fault and detect.
After if the IGBT of generation open fault has changed, then restore the driving signal of each IGBT.On the contrary; when also not changing as if the IGBT that open fault has taken place; the IGBT in parallel with it detects open fault again; then modularization multi-level converter can't be worked; block the driving signal of all IGBT in the whole converter this moment; system enters the stoppage protection state, and this also means current circuitry operation irregularity or has hidden danger, needs maintenance in detail.
Embodiment three: present embodiment is the further restriction to execution mode two, is guaranteeing to measure the submodule output voltage U
APrerequisite under, single IGBT time that works alone is short as far as possible, in the present embodiment:
△T=1/10T
on-1～1/5T
on-1。
Claims (3)
1. three-phase modular multilevel inverter is characterized in that, it comprises that A goes up brachium pontis, A mutually and descends brachium pontis, B to go up brachium pontis, B mutually mutually to descend brachium pontis, C to go up brachium pontis mutually mutually to descend brachium pontis mutually with C,
A goes up brachium pontis, A mutually and descends brachium pontis, B to go up brachium pontis, B mutually mutually to descend brachium pontis, C to go up brachium pontis and C mutually mutually to descend brachium pontis to constitute the three phase full bridge topological structure mutually, and each brachium pontis is followed in series to form by n submodule and inductor L, and n is the positive integer more than or equal to 2;
A goes up the cathode output end of brachium pontis mutually, the cathode output end that B goes up brachium pontis mutually links to each other with the cathode output end that C goes up brachium pontis mutually, and as the positive terminal of three-phase modular multilevel inverter;
A descends the cathode output end of brachium pontis, the cathode output end that B descends brachium pontis mutually to descend the cathode output end of brachium pontis to link to each other mutually with C mutually, and as the negative pole end of three-phase modular multilevel inverter;
The inductor L that A goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with A mutually, and connects the A phase of three-phase alternating-current supply;
The inductor L that B goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with B mutually, and connects the B phase of three-phase alternating-current supply;
The inductor L that C goes up brachium pontis mutually descends the inductor L of brachium pontis to link together with C mutually, and connects the C phase of three-phase alternating-current supply;
Each submodule is made up of first power cell 1, second power cell 2 and capacitor C, and first power cell 1 comprises the first igbt transistor S1 and the second igbt transistor S2; Second power cell 2 comprises the 3rd igbt transistor S3 and the 4th igbt transistor S4;
The collector electrode of the first igbt transistor S1 links to each other with the collector electrode of the 3rd igbt transistor S3 and an end of capacitor C simultaneously;
The emitter of the first igbt transistor S1 connects the collector electrode of the second igbt transistor S2;
The emitter of the 3rd igbt transistor S3 connects the collector electrode of the 4th igbt transistor S4;
The emitter of the second igbt transistor S2 links to each other with the emitter of the 4th igbt transistor S4 and the other end of capacitor C simultaneously, and as the negative pole end of submodule;
The connecting line of the emitter of the emitter of the first igbt transistor S1 and the 3rd igbt transistor S3 is as the positive terminal of submodule;
The first igbt transistor S1, the second igbt transistor S2, the 3rd igbt transistor S3 and the 4th igbt transistor S4 are the IGBT of band inverse parallel diode.
2. the IGBT open fault detects fault-tolerance approach in the submodule of the described three-phase modular multilevel inverter of claim 1, it is characterized in that this method may further comprise the steps:
The driving signal of four IGBT in step 1, each submodule is S1 gate driving pulse u
G1, S2 gate driving pulse u
G2, S3 gate driving pulse u
G3With S4 gate driving pulse u
G4,
u
G1High level lasting time be T
On-1, u
G3High level lasting time be T
On-3, T
On-1=T
On-3,
u
G2High level lasting time be T
On-2, u
G4High level lasting time be T
On-4, T
On-2=T
On-4,
u
G1And u
G3Low duration be T
On-2+ 2 △ T,
△ T is working alone the time of single IGBT,
u
G2And u
G4Low duration be T
On-1+ 2 △ T,
u
G3Than u
G1Delay △ T, u
G4Than u
G2Delay △ T,
u
G1The corresponding u of rising edge
G4Trailing edge, u
G2The corresponding u of rising edge
G3Trailing edge;
Step 2, in the time that the works alone △ T of each IGBT of submodule, the output voltage U of gathering this submodule
A, and judge U
AWhether equate with theoretical value;
If described U
AWhen not waiting with theoretical value, can judge that open fault has taken place this IGBT, execution in step three;
If described U
AWhen equating with theoretical value, can judge that this IGBT does not have open fault, returns execution in step two;
Whether step 3, the judgement IGBT in parallel with the described open fault IGBT of step 2 have open fault,
If IGBT in parallel has open fault, then block the driving signal of all IGBT in the three-phase modular multilevel inverter, system enters the stoppage protection state;
If IGBT in parallel does not have open fault, execution in step four,
Step 4, block the driving signal of this open fault IGBT, the high level lasting time of the driving pulse of IGBT that will be in parallel with it increases △ T simultaneously, thereby guarantees U
AVoltage waveform is constant, and three-phase modular multilevel inverter still can work on; Execution in step five then;
Step 5, send fault indication signal so that the attendant carries out maintain and replace, change the IGBT of open fault is arranged after, return execution in step one.
3. detect fault-tolerance approach according to IGBT open fault in the submodule of the described three-phase modular multilevel inverter of claim 2, it is characterized in that △ T=1/10T
On-1～1/5T
On-1
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