CN103248255B - Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof - Google Patents
Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof Download PDFInfo
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- CN103248255B CN103248255B CN201310198506.3A CN201310198506A CN103248255B CN 103248255 B CN103248255 B CN 103248255B CN 201310198506 A CN201310198506 A CN 201310198506A CN 103248255 B CN103248255 B CN 103248255B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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Abstract
A tri-phase modular multi-level converter and a fault-tolerate detecting method for an IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof belong to the field of electronics and aim to solve the problem that the whole machine cannot work caused by the open circuit fault of the existing MMC. The invention adopts a method of connecting two hemi-bridge power units in parallel in each sub-module of the converter, and the IGBT with the open circuit can be positioned by measuring the output voltage UA of the sub-modules and simultaneously applying a certain phase shift control on the IGBTs in the two hemi-bridge power units in at most half alternating current period, and the modular multi-level converter can be continuously operated when any IGBT in any sub-module is subjected to open circuit fault, thus solving the problem of low reliability and frequent halt for repairing of the traditional modular multi-level converter. In addition, the conducting loss of the IGBT can be reduced due to the parallel connecting work mode of the power units and the converting efficiency of the electric energy of the converter is improved.
Description
Technical field
The present invention relates to IGBT open fault in three-phase modular multilevel inverter and submodule thereof and detect fault-tolerance approach, belong to field of power electronics.
Background technology
In recent years, Modular multilevel converter (Modular Multilevel Converter, MMC) receives much concern in high-power field.Its topological structure forms by the submodule that multiple structure is identical is stacking, each submodule is made up of a half-bridge topology and a capacitor, high-tension high-power can be expanded to neatly by increasing submodule number, and its power component can be operated in lower switching frequency, possess very high energy conversion efficiency, very little Voltage and Current Spikes, and the advantage such as low-down harmonic wave of output voltage content, make it be very suitable for the occasion of the high pressure high-power power conversion such as flexible DC power transmission.
The power component of modularization multi-level converter usually adopt cost performance high, control insulated gate bipolar transistor (IGBT) flexibly, the IGBT be most widely used at present is the bonding line style encapsulation adopting pressure welding lead-in wire technique, and it is often because lead-in wire is by the open circuit caused after electric current scorification that the IGBT of this encapsulation damages.And in modularization multi-level converter, in arbitrary submodule, the open fault of arbitrary IGBT all can cause complete machine to work.Although the failure rate of each IGBT is very low, when high-power, MMC will containing hundreds and thousands of IGBT, and its failure rate raises greatly, and this just causes, and the reliability of MMC converter is low, maintenance cost is expensive.
Summary of the invention
The present invention seeks to the structure adopting a half-bridge topology and a capacitor in order to solve existing MMC, in arbitrary submodule, the open fault of arbitrary IGBT all can cause complete machine to work, cause the problem that the reliability of MMC is low, maintenance cost is expensive, provide IGBT open fault in a kind of three-phase modular multilevel inverter and submodule thereof and detect fault-tolerance approach.
Three-phase modular multilevel inverter of the present invention, it comprises brachium pontis brachium pontis lower to C phase in brachium pontis in brachium pontis in A phase, the lower brachium pontis of A phase, B phase, the lower brachium pontis of B phase, C phase,
The lower brachium pontis of brachium pontis in A phase, A phase, the upper brachium pontis of B phase, the lower brachium pontis of B phase, the upper brachium pontis of C phase and C phase brachium pontis formation three phase full bridge topological structure down, each brachium pontis is followed in series to form by n submodule and inductor L, n be more than or equal to 2 positive integer;
In A phase, in the cathode output end of brachium pontis, B phase, the cathode output end of brachium pontis is connected with the cathode output end of brachium pontis in C phase, and as the positive terminal of three-phase modular multilevel inverter;
The cathode output end of the lower brachium pontis of the cathode output end of the lower brachium pontis of A phase, B phase and the cathode output end of the lower brachium pontis of C phase are connected, and as the negative pole end of three-phase modular multilevel inverter;
In A phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of A phase, and connects the A phase of three-phase alternating-current supply;
In B phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of B phase, and connects the B phase of three-phase alternating-current supply;
In C phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of C phase, and connects the C phase of three-phase alternating-current supply;
Each submodule is made up of the first power cell 1, second power cell 2 and electric capacity C, and the first power cell 1 comprises the first igbt transistor S1 and the second igbt transistor S2; Second power cell 2 comprises the 3rd igbt transistor S3 and the 4th igbt transistor S4;
The collector electrode of the first igbt transistor S1 is connected with one end of electric capacity C with the collector electrode of the 3rd igbt transistor S3 simultaneously;
The emitter of the first igbt transistor S1 connects the collector electrode of the second igbt transistor S2;
The emitter of the 3rd igbt transistor S3 connects the collector electrode of the 4th igbt transistor S4;
The emitter of the second igbt transistor S2 is connected with the other end of electric capacity C with the emitter of the 4th igbt transistor S4 simultaneously, and as the negative pole end of submodule;
The connecting line of the emitter of the first igbt transistor S1 and the emitter of the 3rd igbt transistor S3 is as the positive terminal of submodule;
First igbt transistor S1, the second igbt transistor S2, the 3rd igbt transistor S3 and the 4th igbt transistor S4 are the IGBT of band anti-paralleled diode.
In the submodule of described three-phase modular multilevel inverter, IGBT open fault detects fault-tolerance approach, and the method comprises the following steps:
The drive singal of four IGBT in step one, each submodule is S1 gate driving pulse u
g1, S2 gate driving pulse u
g2, S3 gate driving pulse u
g3with S4 gate driving pulse u
g4,
U
g1high level lasting time be T
on-1, u
g3high level lasting time be T
on-3, T
on-1=T
on-3,
U
g2high level lasting time be T
on-2, u
g4high level lasting time be T
on-4, T
on-2=T
on-4,
U
g1and u
g3low duration be T
on-2+ 2 △ T,
△ T is working alone the time of single IGBT,
U
g2and u
g4low duration be T
on-1+ 2 △ T,
U
g3comparatively u
g1delay △ T, u
g4comparatively u
g2delay △ T,
U
g1the corresponding u of rising edge
g4trailing edge, u
g2the corresponding u of rising edge
g3trailing edge;
Step 2, in the time that the works alone △ T of each IGBT of submodule, gather the output voltage U of this submodule
a, and judge U
awhether equal with theoretical value;
If described U
awhen not waiting with theoretical value, can judge that this IGBT there occurs open fault, perform step 3;
If described U
atime equal with theoretical value, can judge that this IGBT is without open fault, returns execution step 2;
Whether step 3, the judgement IGBT in parallel with open fault IGBT described in step 2 have open fault,
If the IGBT of parallel connection has open fault, then block the drive singal of all IGBT in three-phase modular multilevel inverter, system enters stoppage protection state;
If the IGBT of parallel connection does not have open fault, perform step 4,
Step 4, block the drive singal of this open fault IGBT, the high level lasting time of the driving pulse of the IGBT in parallel with it is increased △ T simultaneously, thus ensure U
avoltage waveform is constant, and three-phase modular multilevel inverter still can work on; Then step 5 is performed;
Step 5, send fault indication signal, so that attendant carries out maintain and replace, change after having the IGBT of open fault, return and perform step one.
Advantage of the present invention: the present invention is compared with traditional Modular multilevel converter; an identical power cell in parallel again on the basis of original half-bridge power unit; can go out occur the IGBT of open fault by quick position by the output voltage of detection sub-module and certain phase shifting control; and converter can continue fault-tolerant operation during any one IGBT generation open fault in any submodule, solves the problem that traditional modular multilevel converter reliability is low, often need shutdown maintenance.In addition, the form of power cell parallel connection reduces the current stress of IGBT, can reduce its conduction loss simultaneously, improves the efficiency of MMC transformation of electrical energy.
Accompanying drawing explanation
Fig. 1 is the topology diagram of three-phase modular multilevel inverter of the present invention;
Fig. 2 is the submodule topology diagram of three-phase modular multilevel inverter of the present invention;
Fig. 3 is the drive singal distribution diagram of each IGBT of submodule of the present invention;
Fig. 4 to Fig. 7 is the state diagram of different I GBT open circuit in submodule;
Fig. 8 detects S
1the drive singal distribution diagram of each IGBT of submodule after open fault.
Embodiment
Embodiment one: present embodiment is described below in conjunction with Fig. 1 and Fig. 2, in three-phase modular multilevel inverter described in present embodiment and submodule thereof, IGBT open fault detects fault-tolerance approach, it comprises brachium pontis brachium pontis lower to C phase in brachium pontis in brachium pontis in A phase, the lower brachium pontis of A phase, B phase, the lower brachium pontis of B phase, C phase
The lower brachium pontis of brachium pontis in A phase, A phase, the upper brachium pontis of B phase, the lower brachium pontis of B phase, the upper brachium pontis of C phase and C phase brachium pontis formation three phase full bridge topological structure down, each brachium pontis is followed in series to form by n submodule and inductor L, n be more than or equal to 2 positive integer;
In A phase, in the cathode output end of brachium pontis, B phase, the cathode output end of brachium pontis is connected with the cathode output end of brachium pontis in C phase, and as the positive terminal of three-phase modular multilevel inverter;
The cathode output end of the lower brachium pontis of the cathode output end of the lower brachium pontis of A phase, B phase and the cathode output end of the lower brachium pontis of C phase are connected, and as the negative pole end of three-phase modular multilevel inverter;
In A phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of A phase, and connects the A phase of three-phase alternating-current supply;
In B phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of B phase, and connects the B phase of three-phase alternating-current supply;
In C phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of C phase, and connects the C phase of three-phase alternating-current supply;
Each submodule is made up of the first power cell 1, second power cell 2 and electric capacity C, and the first power cell 1 comprises the first igbt transistor S1 and the second igbt transistor S2; Second power cell 2 comprises the 3rd igbt transistor S3 and the 4th igbt transistor S4;
The collector electrode of the first igbt transistor S1 is connected with one end of electric capacity C with the collector electrode of the 3rd igbt transistor S3 simultaneously;
The emitter of the first igbt transistor S1 connects the collector electrode of the second igbt transistor S2;
The emitter of the 3rd igbt transistor S3 connects the collector electrode of the 4th igbt transistor S4;
The emitter of the second igbt transistor S2 is connected with the other end of electric capacity C with the emitter of the 4th igbt transistor S4 simultaneously, and as the negative pole end of submodule;
The connecting line of the emitter of the first igbt transistor S1 and the emitter of the 3rd igbt transistor S3 is as the positive terminal of submodule;
First igbt transistor S1, the second igbt transistor S2, the 3rd igbt transistor S3 and the 4th igbt transistor S4 are the IGBT of band anti-paralleled diode.
First power cell 1 and the parallel connection of the second power cell 2, each power cell is all by two IGBT half-bridge structure in series.
Embodiment two: present embodiment is described below in conjunction with Fig. 3 to Fig. 8, in the submodule of three-phase modular multilevel inverter described in execution mode one, IGBT open fault detects fault-tolerance approach, and the method comprises the following steps:
The drive singal of four IGBT in step one, each submodule is S1 gate driving pulse u
g1, S2 gate driving pulse u
g2, S3 gate driving pulse u
g3with S4 gate driving pulse u
g4,
U
g1high level lasting time be T
on-1, u
g3high level lasting time be T
on-3, T
on-1=T
on-3,
U
g2high level lasting time be T
on-2, u
g4high level lasting time be T
on-4, T
on-2=T
on-4,
U
g1and u
g3low duration be T
on-2+ 2 △ T,
△ T is working alone the time of single IGBT,
U
g2and u
g4low duration be T
on-1+ 2 △ T,
U
g3comparatively u
g1delay △ T, u
g4comparatively u
g2delay △ T,
U
g1the corresponding u of rising edge
g4trailing edge, u
g2the corresponding u of rising edge
g3trailing edge;
Step 2, in the time that the works alone △ T of each IGBT of submodule, gather the output voltage U of this submodule
a, and judge U
awhether equal with theoretical value;
If described U
awhen not waiting with theoretical value, can judge that this IGBT there occurs open fault, perform step 3;
If described U
atime equal with theoretical value, can judge that this IGBT is without open fault, returns execution step 2;
Whether step 3, the judgement IGBT in parallel with open fault IGBT described in step 2 have open fault,
If the IGBT of parallel connection has open fault, then block the drive singal of all IGBT in three-phase modular multilevel inverter, system enters stoppage protection state;
If the IGBT of parallel connection does not have open fault, perform step 4,
Step 4, block the drive singal of this open fault IGBT, the high level lasting time of the driving pulse of the IGBT in parallel with it is increased Δ T simultaneously, thus ensure U
avoltage waveform is constant, and three-phase modular multilevel inverter still can work on; Then step 5 is performed;
Step 5, send fault indication signal, so that attendant carries out maintain and replace, change after having the IGBT of open fault, return and perform step one.
As shown in Figure 3, in submodule power cell drive singal distribution diagram, signal U
afor the output voltage waveforms of submodule, wherein T
on-Afor the effective pulse width that control system sends, be also U in a switch periods
aequal condenser voltage U
ctime, T
off-Afor U
aequal the time of 0, then S
1with S
3oN time T
on-1=T
on-3=T
on-A-△ T, S
2with S
4oN time T
on-2=T
on-4=T
off-Athe ratio of-△ T(whole switch periods because Dead Time accounts for is very little, therefore is ignored here).Thus in a switch periods, there is working alone the time of a Δ T in each IGBT, namely at this moment in whole submodule only this IGBT be in opening state.In addition, because time Δ T-phase is very shorter than whole switch periods, so two power cell mosts of the time are at common loaded current, reduce the current stress of each power cell, and ensure that lower conduction loss.
Be the modularization multi-level converter of half-bridge topology for sub modular structure, according to current drive singal and bridge arm current i
adirection (rated current i
aflowing out submodule is its positive direction), output voltage U
athere are several working conditions as shown in table 1:
Table 1IGBT open fault testing mechanism
The detection method of present embodiment open fault is: in the time that the works alone Δ T of each IGBT, the output voltage U of detection sub-module
a.When all IGBT all normally work, U within the time that works alone of S1 and S3
acapacitance voltage U will be equaled
c, and within the time that works alone of S2 and S4 U
ato be 0.Once the U detected
awhen not waiting with the value normally worked in table 1, can judge that the current IGBT being in conducting state there occurs open fault, concrete condition is (owing to only having an IGBT triggering open-minded when detecting, therefore all the other IGBT can be reduced to anti-paralleled diode) as shown in Figures 4 to 7:
(1) work alone in the time at S1, only S
1open-minded, as bridge arm current i
aduring >0, if S
1there is open fault, as shown in Figure 4, then bridge arm current i
awill from S
2with S
4anti-paralleled diode flow through, cause U
a=0.
(2) work alone in the time at S3, only S
3open-minded, as bridge arm current i
aduring >0, if S
3there is open fault, as shown in Figure 5, then bridge arm current i
awill from S
2with S
4anti-paralleled diode flow through, cause U
a=0.
(3) work alone in the time at S2, only S
2open-minded, as bridge arm current i
aduring <0, if S
2there is open fault, as shown in Figure 6, then bridge arm current i
awill from S
1with S
3anti-paralleled diode flow through, cause U
a=U
c.
(4) work alone in the time at S4, only S
4open-minded, as bridge arm current i
aduring <0, if S
4there is open fault, as shown in Figure 7, then bridge arm current i
awill from S
1with S
3anti-paralleled diode flow through, cause U
a=U
c.
Adopt the detection method of present embodiment, when open fault occurs certain IGBT, at most only need half ac cycle (to wait for bridge arm current i
athe anti-phase time required at most) this fault can be detected.
When after the IGBT detecting open circuit, block the drive singal of this fault IGBT, the ON time of the IGBT in parallel with it is increased Δ T simultaneously, thus ensure U
avoltage waveform is constant, and modularization multi-level converter still can work on.Such as after detecting that open fault appears in S1, the drive singal of adjustment IGBT, as shown in Figure 8, makes T
on-1=0, that in parallel with S1 is S3, then the high level of S3 gate driving pulse increases Δ T, i.e. T
on-3=(T
on-A-△ T)+△ T=T
on-A, and T
on-2and T
on-4remain unchanged.Meanwhile, send fault indication signal, so that attendant carries out maintain and replace, continuation is performed open fault and detects by the IGBT of non-faulting.
If after the IGBT that open fault occurs changes, then restore the drive singal of each IGBT.On the contrary; if when the IGBT that open fault has occurred does not also change; the IGBT in parallel with it detects open fault again; then modularization multi-level converter cannot work; now block the drive singal of all IGBT in whole converter; system enters stoppage protection state, and this also means current circuitry operation irregularity or there is hidden danger, needs to overhaul in detail.
Embodiment three: present embodiment is the further restriction to execution mode two, is guaranteeing to measure submodule output voltage U
aprerequisite under, single IGBT time that works alone is short as far as possible, in present embodiment:
△T=1/10T
on-1～1/5T
on-1。
Claims (2)
1. in the submodule of three-phase modular multilevel inverter, IGBT open fault detects fault-tolerance approach, and described three-phase modular multilevel inverter comprises brachium pontis and C phase brachium pontis down in brachium pontis under brachium pontis A phase in, the lower brachium pontis of A phase, the upper brachium pontis of B phase, B phase, C phase,
The lower brachium pontis of brachium pontis in A phase, A phase, the upper brachium pontis of B phase, the lower brachium pontis of B phase, the upper brachium pontis of C phase and C phase brachium pontis formation three phase full bridge topological structure down, each brachium pontis is followed in series to form by n submodule and inductor L, n be more than or equal to 2 positive integer;
In A phase, in the cathode output end of brachium pontis, B phase, the cathode output end of brachium pontis is connected with the cathode output end of brachium pontis in C phase, and as the positive terminal of three-phase modular multilevel inverter;
The cathode output end of the lower brachium pontis of the cathode output end of the lower brachium pontis of A phase, B phase and the cathode output end of the lower brachium pontis of C phase are connected, and as the negative pole end of three-phase modular multilevel inverter;
In A phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of A phase, and connects the A phase of three-phase alternating-current supply;
In B phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of B phase, and connects the B phase of three-phase alternating-current supply;
In C phase, the inductor L of brachium pontis links together with the inductor L of the lower brachium pontis of C phase, and connects the C phase of three-phase alternating-current supply;
Each submodule is made up of the first power cell 1, second power cell 2 and electric capacity C, and the first power cell 1 comprises the first igbt transistor S1 and the second igbt transistor S2; Second power cell 2 comprises the 3rd igbt transistor S3 and the 4th igbt transistor S4;
The collector electrode of the first igbt transistor S1 is connected with one end of electric capacity C with the collector electrode of the 3rd igbt transistor S3 simultaneously;
The emitter of the first igbt transistor S1 connects the collector electrode of the second igbt transistor S2;
The emitter of the 3rd igbt transistor S3 connects the collector electrode of the 4th igbt transistor S4;
The emitter of the second igbt transistor S2 is connected with the other end of electric capacity C with the emitter of the 4th igbt transistor S4 simultaneously, and as the negative pole end of submodule;
The connecting line of the emitter of the first igbt transistor S1 and the emitter of the 3rd igbt transistor S3 is as the positive terminal of submodule;
First igbt transistor S1, the second igbt transistor S2, the 3rd igbt transistor S3 and the 4th igbt transistor S4 are the IGBT of band anti-paralleled diode;
It is characterized in that, the method comprises the following steps:
The drive singal of four IGBT in step one, each submodule is the first igbt transistor S1 gate driving pulse u
g1, the second igbt transistor S2 gate driving pulse u
g2, the 3rd igbt transistor S3 gate driving pulse u
g3with the 4th igbt transistor S4 gate driving pulse u
g4,
U
g1high level lasting time be T
on-1, u
g3high level lasting time be T
on-3, T
on-1=T
on-3,
U
g2high level lasting time be T
on-2, u
g4high level lasting time be T
on-4, T
on-2=T
on-4,
U
g1and u
g3low duration be T
on-2+ 2 △ T,
△ T is working alone the time of single IGBT,
U
g2and u
g4low duration be T
on-1+ 2 △ T,
U
g3comparatively u
g1delay △ T, u
g4comparatively u
g2delay △ T,
U
g1the corresponding u of rising edge
g4trailing edge, u
g2the corresponding u of rising edge
g3trailing edge;
Step 2, in the time that the works alone △ T of each IGBT of submodule, gather the output voltage U of this submodule
a, and judge the output voltage U of submodule
awhether equal with theoretical value;
If the output voltage U of described submodule
awhen not waiting with theoretical value, can judge that this IGBT there occurs open fault, perform step 3;
If the output voltage U of described submodule
atime equal with theoretical value, can judge that this IGBT is without open fault, returns execution step 2;
Whether step 3, the judgement IGBT in parallel with open fault IGBT described in step 2 have open fault,
If the IGBT of parallel connection has open fault, then block the drive singal of all IGBT in three-phase modular multilevel inverter, system enters stoppage protection state;
If the IGBT of parallel connection does not have open fault, perform step 4,
Step 4, block the drive singal of this open fault IGBT, the high level lasting time of the driving pulse of the IGBT in parallel with it is increased △ T simultaneously, thus ensure the output voltage U of submodule
avoltage waveform is constant, and three-phase modular multilevel inverter still can work on; Then step 5 is performed;
Step 5, send fault indication signal, so that attendant carries out maintain and replace, change after having the IGBT of open fault, return and perform step one.
2. in the submodule of three-phase modular multilevel inverter according to claim 1, IGBT open fault detects fault-tolerance approach, it is characterized in that, △ T=1/10T
on-1~ 1/5T
on-1.
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