CN208386436U - A kind of modularization multi-level converter based on IGCT - Google Patents
A kind of modularization multi-level converter based on IGCT Download PDFInfo
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- CN208386436U CN208386436U CN201821051000.4U CN201821051000U CN208386436U CN 208386436 U CN208386436 U CN 208386436U CN 201821051000 U CN201821051000 U CN 201821051000U CN 208386436 U CN208386436 U CN 208386436U
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Abstract
The utility model relates to a kind of modularization multi-level converter based on IGCT, the modularization multi-level converter has multiple bridge arms, and each bridge arm in multiple bridge arms is equipped with one or more half-bridge arrangements based on IGCT；The half-bridge arrangement includes buffer circuit, multiple IGCT switching devices, and the multiple IGCT switching device cascade connection forms IGCT cascade circuit；The buffer circuit is connect with the cascade circuit.By the technical solution of the utility model, the requirement to the through-current capability of equipment is reduced, improves the economy and reliability of DC Line Fault processing capacity.
Description
Technical field
The utility model relates to power electronics fields, and in particular to a kind of modular multilevel change of current based on IGCT
Device.
Background technique
MMC (modular multilevel converter, modularization multi-level converter) is identical by multiple structures
SM (Sub-module, submodule) cascade is constituted, and has great application prospect in inverter field.One kind as shown in figure 1
The topology diagram of MMC in three-phase circuit.As shown in Figure 1, there are six bridge arm in three-phase circuit, each bridge arm has multiple grades
The SM of connection: cascade SMap1-SMapn, the second bridge arm have cascade SMbp1- in the first bridge arm as shown in Figure 1
SMbpn, third bridge arm have cascade SMcp1-SMcpn, four bridge legs to have cascade SMan1-SMann, the 5th bridge arm to have cascade
SMbn1-SMbnn, the 6th bridge arm have cascade SMcn1-SMcnn.
IGBT (Insulated Gate Bipolar Transistor, insulated gate have been generally used in MMC at present
Bipolar junction transistor), if Fig. 2 outputs traditional SM based on IGBT, it includes cascade IGBT element as shown in the figure, each
Anti-paralleled diode between the anode and cathode of IGBT element.
After tradition is applied to MMC based on the SM of IGBT, when DC side breaks down, since IGBT shortage tides over failure electricity
The ability of stream, it is necessary to be latched IGBT to protect it from being damaged.At this point, due to the effect of anti-paralleled diode, based on IGBT's
Traditional MMC will be equivalent to the short trouble state of not empty rectification circuit, and alternating voltage still continues to press to DC port.And it is practical
In, to its movement, there is still a need for regular hour (about 1~2ms) after detecting short trouble for dc circuit breaker, such as t1 in Fig. 3
I shown in moment to the dotted line between the t2 momentFIGBT.Fault current continues to increase during this period, therefore under tradition MMC, direct current
The fault current processing capacity of breaker and relevant DC Line Fault processing unit should be according to the actuation time of dc circuit breaker
When fault current iFIGBTIt is configured, to increase the requirement to the through-current capability of equipment, reduces DC Line Fault processing
The economy and reliability of ability.
Utility model content
For the technical problem for being directed to DC Line Fault processing capacity deficiency in the prior art, the utility model proposes one kind
Modularization multi-level converter based on IGCT.
A kind of modularization multi-level converter based on IGCT, the modularization multi-level converter have multiple bridge arms,
Each bridge arm in multiple bridge arms is equipped with one or more half-bridge arrangements based on IGCT；
The half-bridge arrangement includes buffer circuit, multiple IGCT switching devices, wherein
The multiple IGCT switching device cascade connection forms IGCT cascade circuit；
The buffer circuit is connect with the cascade circuit.
Further:
The buffer circuit includes first diode, first capacitor, the first inductance and first resistor, wherein
The first end of first inductance is connect with the first end of the first resistor, the second end of first inductance with
The anode of the first diode connects；The cathode of the first diode is connect with the second end of the first resistor, described
The first end of first capacitor is connect with the cathode of the first diode；
First IGCT derailing switch in the anode of first diode described in the buffer circuit and the IGCT cascade circuit
The anode of part connects, and the second end of first capacitor described in the buffer circuit is opened with the 2nd IGCT in the IGCT cascade circuit
Close the cathode connection of device.
Further, the first end of second capacitor and the first end of first inductance in the buffer circuit connect
It connects, the second end of second capacitor is connect with the second end of the first capacitor in the buffer circuit.
Further, the equal anti-paralleled diode of each of the multiple IGCT switching device.
Further:
First connecting pin is connect with the cathode of first IGCT switching device in the multiple IGCT switching device；
The second connection end is connect with the cathode of second IGCT switching device in the multiple IGCT switching device.
Further, multiple half-bridge arrangements on each bridge arm connect in cascaded fashion.
By the technical solution of the utility model, the requirement to the through-current capability of equipment is reduced, DC Line Fault is improved
The economy and reliability of processing capacity.Other features and advantages of the utility model will illustrate in the following description, and
And partly as will become apparent from the description, or and implementing the utility model understand.The purpose of this utility model
It can be achieved and obtained by structure pointed in the specification, claims and drawings with other advantages.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is
Some embodiments of the utility model, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 shows a kind of MMC system structure diagram according to prior art；
Fig. 2 shows the SM structural schematic diagrams according to the prior art based on IGBT；
Fig. 3 shows the DC Line Fault treatment process using IGCT surge current ability according to the utility model embodiment
Schematic diagram；
Fig. 4 shows the SM structural schematic diagram based on IGCT according to the utility model embodiment；
Fig. 5 is shown to be shown according to the short trouble treatment process equivalent circuit after the IGCT of the utility model embodiment movement
It is intended to.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment clearly and completely illustrates the technical scheme in the embodiment of the utility model.Obviously, it is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
As Fig. 4 shows the SM structural schematic diagram based on IGCT according to the utility model embodiment.
The SM module includes cascade two or more IGCT switching devices, with a SM in the utility model embodiment
In containing there are two illustrating for IGCT switching device, but be not limited to two IGCT switching devices.Such as Fig. 4 institute
Show, IGCT switching device SXi1With IGCT switching device SXi2Cascade connection, i.e. IGCT switching device SXi1Cathode and IGCT switch
Device SXi2Anode connection.
Anti-paralleled diode between the anode and cathode of each IGCT switching device, to provide stream to reversed bridge arm current
Path, to ensure the electric current bidirectional flow general character of SM submodule.As shown in figure 4, the IGCT switching device SXi1Two pole of inverse parallel
Pipe DXi1: diode DXi1Cathode and the IGCT switching device SXi1Anode connection, diode DXi1Anode with it is described
IGCT switching device SXi1Cathode connection；The IGCT switching device SXi2Anti-paralleled diode DXi2: diode DXi2Cathode
With the IGCT switching device SXi2Anode connection, diode DXi2Anode and the IGCT switching device SXi2Cathode connect
It connects.
The SM module further includes buffer circuit, and the buffer circuit includes diode Dxis, capacitor Cxis, inductance LxisWith
Resistance Rxis, with the overvoltage or overcurrent generated in the suppression circuit course of work, prevent overvoltage or overcurrent from causing to IGCT
Injury, reduces the switching loss of ICT, improves its operating condition.As shown in figure 4, the inductance LxisFirst end and the resistance
RxisFirst end connection, the inductance LxisSecond end and the diode DxisAnode connection.The diode Dxis's
Cathode and the resistance RxisSecond end connection, the capacitor CxisFirst end and the diode DxisCathode connection.Institute
State diode D described in buffer circuitxisAnode and the IGCT switching device SXi1Anode connection, the capacitor Cxis's
Second end and the IGCT switching device SXi2Cathode connection.It should be noted that including cascade three or three in SM module
When a above IGCT switching device, the diode DxisAnode and cascade IGCT switching device in first IGCT
The anode of switching device connects, the capacitor CxisSecond end opened with the last one IGCT in cascade IGCT switching device
Close the cathode connection of device.
The SM module further includes DC capacitor Cxi, the DC capacitor CxiAnode and the inductance LxisFirst end
Connection, the DC capacitor CxiCathode and the capacitor CxisSecond end connection.It should be noted that the utility model is real
Example is applied to illustrate by taking the capacitor of polarized as an example, but the DC capacitor CxiIt is not limited to the capacitor of polarized,
The capacitor of non-polarized may be equally applicable for the utility model embodiment.
The SM module further includes two connecting pins, wherein the first connecting pin two cascade IGCT switching devices it
Between, as shown in figure 4, the first connecting pin and the IGCT switching device SXi1Cathode connection, i.e., also with the IGCT switching device
SXi2Anode connection；Second connection end is connect with the cathode of the last one IGCT switching device, as shown in figure 4, second end and institute
State IGCT switching device SXi2Cathode connection.
When the SM module building MMC, the cascade of multiple SM modules is realized by described two connecting pins of SM module.Such as
In Fig. 5, the case where schematically illustrating three-phase circuit, has 6 bridge arms in three-phase circuit, shows in the dotted line frame of Fig. 5
Example property showing two SM modules realizes cascade connection type on a bridge arm wherein.As shown in figure 5, SM module SM1
Second connection end connect with the first connecting pin of SM module SM2, with realize two SM modules cascade, and pass through cascade SM
Second connection of the first connecting pin of first SM module SM1 in module, second SM module SM2 in cascade SM module
End and on a bridge arm being disposed therein cascade two SM modules.It should be noted that, although Fig. 5 is diagrammatically only
SM module is set on a bridge arm in six bridge arms, but in the utility model embodiment, each bridge arm is equipped with one
SM module or multiple cascade SM modules.And for quarter-phase circuit, four bridge arms in the Central Europe MMC are all provided on four bridge arms
Set SM module or the multiple cascade SM modules of setting.
The above-mentioned SM based on IGCT of the utility model embodiment is applied in MMC circuit structure, can utilize IGCT's
Surge current ability is effectively treated.In the utility model embodiment, in conjunction with attached drawing 3 process schematic to DC Line Fault
Processing method is introduced.
As shown in figure 3, this method is broadly divided into the following period:
1) the t0 moment: i.e. the moment occurs for DC Line Fault.It is assumed that the DC line being connected with MMC DC side is sent out at the t0 moment
Short trouble is given birth to, at this time DC current iFStart rapid increase.
2) the t1 moment: i.e. IGCT trigger pulse switch instant.At the t1 moment, system detection to DC Line Fault is immediately controlled
IGCT switching device SXi1Shutdown, IGCT switching device SXi2It opens, at this time the surge current ability based on IGCT, half-bridge submodule
The trigger pulse of SM is directly converted to IGCT switching device S by steady-state operating conditionXi2Conducting, IGCT switching device SXi1Shutdown
Bypass condition, wherein trigger pulse controls the S in steady-state operationXi1、SXi2Between conducting and off state carry out
Regular continuous switching, and S under bypass conditionXi1Conducting, SXi2Shutdown.Meanwhile being broken by system-level controller by direct current is controlled
The signal that road device disconnects is sent to dc circuit breaker to control the dc circuit breaker and disconnect, so that DC line is breaking.But by
It needs to be delayed in the movement of physical device, at this point, dc circuit breaker does not turn off, equivalent circuit is as shown in Figure 5.From Fig. 5
In it is found that under this operation, the DC port potential difference of the MMC based on IGCT would fall to zero, on direct fault current stops
It rises, AC network, which is then equivalent to, occurs three-phase shortcircuit by the bridge arm reactance of MMC.That is since IGCT has receiving larger
The ability of surge current, in the movement of IGCT submodule, when dc circuit breaker receives action signal to this section of actual act
Between, the fault current for flowing through dc circuit breaker does not rise, but maintains the current value of t1 substantially, as in Fig. 3 between t1-t2
It is shown in solid.
3) the t2 moment: i.e. dc circuit breaker actual act moment.From figure 3, it can be seen that due to the movement of IGCT, direct current
The drop-out current i of breakerFIGCTIt is significantly less than the fault current i of the traditional scheme based on IGBTFIGBT, to can be greatly reduced
Requirement to dc circuit breaker and other DC Line Fault processing equipments.
It should be understood that above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations.Together
When, " first " of the utility model, " second " etc. not indicate a kind of tandem, are used only for identifying relevant unit, dress
It sets.
Although the utility model is described in detail with reference to the foregoing embodiments, those skilled in the art are answered
Work as understanding: it is still possible to modify the technical solutions described in the foregoing embodiments, or special to part of technology
Sign is equivalently replaced；And these are modified or replaceed, each reality of the utility model that it does not separate the essence of the corresponding technical solution
Apply the spirit and scope of a technical solution.
Claims (6)
1. a kind of modularization multi-level converter based on IGCT, the modularization multi-level converter has multiple bridge arms, more
Each bridge arm in a bridge arm is equipped with one or more half-bridge arrangements based on IGCT；
The half-bridge arrangement includes buffer circuit, multiple IGCT switching devices, wherein
The multiple IGCT switching device cascade connection forms IGCT cascade circuit；
The buffer circuit is connect with the cascade circuit.
2. the modularization multi-level converter according to claim 1 based on IGCT, wherein
The buffer circuit includes first diode, first capacitor, the first inductance and first resistor, wherein
The first end of first inductance is connect with the first end of the first resistor, the second end of first inductance with it is described
The anode of first diode connects；The cathode of the first diode is connect with the second end of the first resistor, and described first
The first end of capacitor is connect with the cathode of the first diode；
First IGCT switching device in the anode of first diode described in the buffer circuit and the IGCT cascade circuit
Anode connection, the second end of first capacitor described in the buffer circuit and the 2nd IGCT derailing switch in the IGCT cascade circuit
The cathode of part connects.
3. the modularization multi-level converter according to claim 2 based on IGCT, the half-bridge arrangement further include second
Capacitor, wherein
The first end of second capacitor is connect with the first end of first inductance in the buffer circuit, second electricity
The second end of appearance is connect with the second end of the first capacitor in the buffer circuit.
4. the modularization multi-level converter according to claim 1 based on IGCT, wherein
The equal anti-paralleled diode of each of the multiple IGCT switching device.
5. the modularization multi-level converter according to claim 1 to 4 based on IGCT, the half-bridge arrangement are also wrapped
Include the first connecting pin and second connection end, wherein
First connecting pin is connect with the cathode of first IGCT switching device in the multiple IGCT switching device；
The second connection end is connect with the cathode of second IGCT switching device in the multiple IGCT switching device.
6. the modularization multi-level converter according to claim 1 based on IGCT, wherein
Multiple half-bridge arrangements on each bridge arm connect in cascaded fashion.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821051000.4U CN208386436U (en) | 2018-07-03 | 2018-07-03 | A kind of modularization multi-level converter based on IGCT |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821051000.4U CN208386436U (en) | 2018-07-03 | 2018-07-03 | A kind of modularization multi-level converter based on IGCT |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108616223A (en) * | 2018-07-03 | 2018-10-02 | 清华大学 | A kind of modularization multi-level converter and fault handling method based on IGCT |
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2018
- 2018-07-03 CN CN201821051000.4U patent/CN208386436U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108616223A (en) * | 2018-07-03 | 2018-10-02 | 清华大学 | A kind of modularization multi-level converter and fault handling method based on IGCT |
| CN108616223B (en) * | 2018-07-03 | 2024-04-09 | 清华大学 | IGCT-based modularized multi-level converter and fault processing method |
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