CN103116080B - Circuit and method for measuring stray inductance of current conversion circuit of three-level converter - Google Patents
Circuit and method for measuring stray inductance of current conversion circuit of three-level converter Download PDFInfo
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- CN103116080B CN103116080B CN201310032986.6A CN201310032986A CN103116080B CN 103116080 B CN103116080 B CN 103116080B CN 201310032986 A CN201310032986 A CN 201310032986A CN 103116080 B CN103116080 B CN 103116080B
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Abstract
The invention discloses a circuit and a method for measuring stray inductance of a current conversion circuit of a three-level converter. The circuit comprises a first IGBT (insulated gate bipolar transistor), a second IGBT, a third IGBT, a fourth IBGT, a first clamp diode, a second clamp diode, a first resonant capacitor, a second resonant capacitor, a first direct-current support capacitor, a second direct-current support capacitor, a laminated busbar, a direct-current power supply and a freewheel reactor. The method includes forming different freewheel circuits by the freewheel reactor; exerting double pulses to each corresponding IGBT; taking an average value of resonance current frequencies at a turn-on moment and a turn-off moment; and precisely computing the stray inductance of the current conversion circuit by an LC parallel resonance characteristic realized by the resonant capacitors and the stray inductance of the circuit. The circuit and the method have the advantages that actual operation is facilitated, the stray inductance of the current conversion circuit of the three-level converter can be accurately measured, overvoltage levels of a power device under different current grades of the three-level converter can be accurately controlled conveniently, and accordingly establishment of a system control strategy can be guided.
Description
Technical field
The present invention relates to applied power electronics field, particularly relate to a kind of metering circuit and measuring method thereof of commutation circuit random thoughts of three-level current transformer.
Background technology
Along with the lifting of power conversion system power grade and the development of Power Electronic Technique, IGBT(insulated gate bipolar transistor) power density of module is more and more higher, open turn-off performance and become better and better, this just mean cut-off current and slope increasing.Now generate voltage by the stray inductance of the commutation circuit of three-level current transformer, this voltage is directly attached to the IGBT two ends of shutoff together with DC bus-bar voltage, and then likely surmounts the rated voltage of IGBT and cause the damage of device.The numerical value of therefore definite grasp commutation circuit stray inductance, under effectively can inferring different capacity grade, IGBT turns off superpotential level, is conducive to the design of system protection scheme with the operation ensureing that in transient state process, security of system is stable.
There are two large commutation circuits and two little commutation circuits in three-level current transformer, owing to comprising multiple power device in commutation circuit, and the equivalent random thoughts of power device differ within an order of magnitude with the random thoughts of stack bus bar, therefore only rely on the random thoughts numerical value of stack bus bar, accurately can not judge the overvoltage level of IGBT under certain current class.Traditional stack bus bar random thoughts method of testing relies on IGBT to open or the pressure drop of shutdown moment device, therefore measured result does not comprise the equivalent random thoughts of this IGBT self, and require the rate of change keeping electric current in the stabilization sub stage in pressure drop in measuring process, degree of accuracy and the test condition of measurement are closely related.
Summary of the invention
The object of the present invention is to provide a kind of metering circuit and measuring method thereof of commutation circuit random thoughts of three-level current transformer, can facilitate, accurately measure the commutation circuit stray inductance of three-level current transformer.
The technical scheme realizing above-mentioned purpose is:
The metering circuit of the commutation circuit random thoughts of a kind of three-level current transformer of one of the present invention, comprise an IGBT, the 2nd IGBT, the 3rd IGBT, the 4th IGBT, the first clamp diode, the second clamp diode, the first resonant capacitance, the second resonant capacitance, the first DC support electric capacity, the second DC support electric capacity, stack bus bar, direct supply and afterflow reactor, wherein:
The emitter of a described IGBT connects the collector of described 2nd IGBT; The emitter of described 2nd IGBT connects the collector of described 3rd IGBT; The emitter of described 3rd IGBT connects the collector of described 4th IGBT;
The anode of described stack bus bar connects the collector of a described IGBT, the described positive pole of the first DC support electric capacity and the positive pole of described direct supply respectively; The negative terminal of described stack bus bar connects the emitter of described 4th IGBT, the described negative pole of the second DC support electric capacity and the negative pole of described direct supply respectively;
The negative pole of described first DC support electric capacity connects the positive pole of described second DC support electric capacity;
Described first resonant capacitance and described first DC support Capacitance parallel connection;
Described second resonant capacitance and described second DC support Capacitance parallel connection;
The negative electrode of described first clamp diode connects the emitter of a described IGBT; The anode of described first clamp diode connects the negative electrode of described second clamp diode; The anode of described second clamp diode connects the collector of described 4th IGBT;
Described first clamp diode is connected the end that connects of described first DC support electric capacity and the second DC support electric capacity with the end that connects of the second clamp diode;
Between the collector that described afterflow reactor is connected to a described IGBT and the emitter of the 2nd IGBT, or be connected between the negative electrode of described second clamp diode and the collector of described 4th IGBT;
Described stack bus bar comprises: positive busbar, negative busbar, zero busbar, alternating current bus bar, first connect busbar and be connected busbar with second, wherein:
Positive busbar connects the collector of an IGBT and the positive pole of the first DC support electric capacity;
Negative busbar connects the emitter of the 4th IGBT and the negative pole of the second DC support electric capacity;
Zero busbar connects the anode of the first clamp diode and the negative electrode of the second clamp diode;
Alternating current bus bar connects the emitter of the 2nd IGBT and the collector of the 3rd IGBT;
First connects busbar connects the emitter of an IGBT and the negative electrode of the first clamp diode;
Second connects busbar connects the collector of the 4th IGBT and the anode of the second clamp diode.The commutation circuit of described three-level current transformer comprises the first commutation circuit and the second commutation circuit, wherein:
First commutation circuit comprises described positive busbar, an IGBT, the 2nd IGBT, alternating current bus bar, the 3rd IGBT, the second connection busbar, the second clamp diode, zero busbar and the first resonant capacitance;
Second commutation circuit comprises the second resonant capacitance, zero busbar, the second clamp diode, the second connection busbar, the 4th IGBT and negative busbar.
The metering circuit of the commutation circuit random thoughts of above-mentioned three-level current transformer, wherein,
When testing the first commutation circuit, afterflow reactor is connected between the collector of an IGBT and the emitter of the 2nd IGBT;
When testing the second commutation circuit, afterflow reactor is connected between the negative electrode of the second clamp diode and the collector of the 4th IGBT.
The measuring method of the commutation circuit random thoughts of the three-level current transformer based on the described metering circuit of one of the present invention of the present invention two, comprises the following steps:
First commutation circuit is tested:
Step one, afterflow reactor is connected between the collector of an IGBT and the emitter of the 2nd IGBT; Make an IGBT and the 4th IGBT keep turning off, the 2nd IGBT keeps open-minded, and the 3rd IGBT is open-minded in the t0 moment, and the t1 moment turns off, and the t2 moment is again open-minded, and the t3 moment turns off again;
Step 2, by the opening process in t2 to t3 moment, the frequency f of the parallel resonance electric current that the stray inductance of trying to achieve the first resonant capacitance and the first commutation circuit is formed, and according to the characteristic of LC parallel resonance, obtain the stray inductance L of the first commutation circuit
1=1/(4Cs1 π
2f
2); Wherein, Cs1 represents the capacitance of the first resonant capacitance;
Second commutation circuit is tested:
Step 3, afterflow reactor is connected between the negative electrode of the second clamp diode and the collector of the 4th IGBT; Make first, second, and third IGBT all keep turning off, the 4th IGBT S4 is open-minded in the t0 ' moment, and the t1 ' moment turns off, and the t2 ' moment is again open-minded, and the t3 ' moment turns off again;
Step 4, passes through the opening process in t2 ' to t3 ' moment, the frequency f of the parallel resonance electric current that the stray inductance of trying to achieve the second resonant capacitance and the second commutation circuit is formed ', and according to the characteristic of LC parallel resonance, obtain the stray inductance L of the second commutation circuit
2=1/(4Cs2 π
2f
2); Wherein, Cs2 represents the capacitance of the second resonant capacitance.
The invention has the beneficial effects as follows: the present invention utilizes LC parallel resonance to test three-level current transformer commutation circuit random thoughts, IGBT is not relied on to open or the voltage and current of shutdown moment, but the whole process utilizing device to open, and only use the frequency values of collector current, thus make test result comprise the equivalent random thoughts of power devices all in loop and the random thoughts of stack bus bar, more accurately, credible.Meanwhile, the present invention only needs the electric current of measuring element, and variable is few, is conducive to practical operation, is convenient to accurate assurance three-level current transformer under different current class, the overvoltage level of power device, with the formulation of guidance system control strategy.
Accompanying drawing explanation
Fig. 1 is test circuit schematic diagram of the present invention;
Fig. 2 is the first commutation circuit experimental waveform figure of the present invention;
Fig. 3 is the experimental waveform figure of conventional test methodologies first commutation circuit;
Fig. 4 is the second commutation circuit experimental waveform figure of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Refer to Fig. 1, the metering circuit of the commutation circuit random thoughts of the three-level current transformer of one of the present invention, comprise an IGBT S1, the 2nd IGBT S2, the 3rd IGBT S3, the 4th IGBT S4, the first clamp diode D1, the second clamp diode D2, the first resonant capacitance C s1, the second resonant capacitance Cs2, the first DC support electric capacity C1, the second DC support electric capacity C2, stack bus bar (not shown), direct supply DCs and afterflow reactor L, wherein:
One IGBT, the 2nd IGBT, the 3rd IGBT and the 4th IGBT series aiding connection, that is: the emitter of an IGBTS1 connects the collector of the 2nd IGBT S2; The emitter of the 2nd IGBT S2 connects the collector of the 3rd IGBT S3; The emitter of the 3rd IGBT S3 connects the collector of the 4th IGBT S4;
The anode DC+ of stack bus bar connects the collector of an IGBT S1, the positive pole of the first DC support electric capacity C1 and the positive pole of direct supply DCs respectively; The negative terminal DC-of stack bus bar connects the emitter of the 4th IGBT S4, the negative pole of the second DC support electric capacity C2 and the negative pole of direct supply DCs respectively;
The negative pole of the first DC support electric capacity C1 connects the positive pole of the second DC support electric capacity C2;
First resonant capacitance Cs1 is in parallel with the first DC support electric capacity C1;
Second resonant capacitance Cs2 is in parallel with the second DC support electric capacity C2;
The negative electrode of the first clamp diode D1 connects the emitter of an IGBT S1; The anode of the first clamp diode D1 connects the negative electrode of the second clamp diode D2; The anode of the second clamp diode D2 connects the collector of the 4th IGBTS4;
The end that connects of the end connection first DC support electric capacity C1 and the second DC support electric capacity C2 that connects of the first clamp diode D1 and the second clamp diode D2;
Afterflow reactor L is connected between the collector of an IGBT S1 and the emitter of the 2nd IGBT S2, or is connected between the negative electrode of the second clamp diode D2 and the collector of the 4th IGBT S4;
One IGBT S1, the 2nd IGBT S2, the 3rd IGBT S3, the 4th IGBT S4, the first clamp diode D1 and the second clamp diode D2 form single-phase tri-level circuit;
Stack bus bar comprises: positive busbar, negative busbar, zero busbar, alternating current bus bar, first connect busbar and be connected busbar with second, wherein:
Positive busbar connects the collector of an IGBT S1 and the positive pole of the first DC support electric capacity C1;
Negative busbar connects the emitter of the 4th IGBT S4 and the negative pole of the second DC support electric capacity C2;
Zero busbar connects the anode of the first clamp diode D1 and the negative electrode of the second clamp diode D2;
Alternating current bus bar connects the emitter of the 2nd IGBT S2 and the collector of the 3rd IGBT S3;
First connects busbar connects the emitter of an IGBT S1 and the negative electrode of the first clamp diode D1;
Second connects busbar connects the collector of the 4th IGBT S4 and the anode of the second clamp diode D2; The commutation circuit of three-level current transformer comprises the first commutation circuit, the second commutation circuit, the 3rd commutation circuit and the 4th commutation circuit, wherein:
First commutation circuit is connected busbar, the second clamp diode D2, zero busbar and the first resonant capacitance Cs1 formed by positive busbar, an IGBT S1, the 2nd IGBT S2, alternating current bus bar, the 3rd IGBT S3, second;
Second commutation circuit comprises the second resonant capacitance Cs2, zero busbar, the second clamp diode D2, the second connection busbar, the 4th IGBT S4 and negative busbar formation;
3rd commutation circuit is connected busbar, the 2nd IGBT S2, alternating current bus bar, the 3rd IGBT S3, the 4th IGBT S4 and negative busbar formed by the second resonant capacitance Cs2, zero busbar, the first catching diode D1, first;
4th commutation circuit is connected busbar, the first clamp diode D1 and zero busbar formed by the first resonant capacitance C s1, positive busbar, an IGBT S1, first;
Two large commutation circuits (the first commutation circuit and the 3rd commutation circuit) are structurally symmetrical, and equivalent random thoughts are equal; Two little commutation circuits (the second commutation circuit and the 4th commutation circuit) are also structurally symmetrical, and its equivalent random thoughts are equal; Therefore, test one of them large commutation circuit and little commutation circuit respectively, the present invention's test the first commutation circuit wherein and the second commutation circuit.
When testing the first commutation circuit (large commutation circuit), afterflow reactor L is connected between the collector of an IGBTS1 and the emitter of the 2nd IGBT S2; When testing the second commutation circuit (little commutation circuit), afterflow reactor L is connected between the negative electrode of the second clamp diode D2 and the collector of the 4th IGBT S4, i.e. between the connecting and hold of connect end and the 3rd IGBTS3 and the 4th IGBT S4 of the first DC support electric capacity C1 and the second DC support electric capacity C2.
In addition, in Fig. 1, L
σ 1, L
σ 2, L
σ 3, L
σ 4, L
σ 5, L
σ 6be respectively the equivalent stray inductance of positive busbar, negative busbar, zero busbar, alternating current bus bar, upper connection busbar and lower connection busbar; L
s1, L
s2, L
s3, L
s4be respectively the equivalent stray inductance of an IGBT S1, the 2nd IGBT S2, the 3rd IGBT S3, the 4th IGBT S4; L
d1, L
d2be respectively the equivalent random thoughts of first, second clamp diode D1, D2; Direct supply DCs puts on anode DC+ and the negative terminal DC-of stack bus bar; Wherein, DC0 represents the joining of the first DC support electric capacity C1 and the second DC support electric capacity C2, i.e. line end in direct current; AC represents output AC.
The principle of work of the test circuit of one of the present invention, i.e. the method for testing (based on one of the present invention) of the commutation circuit random thoughts of the three-level current transformer of the present invention two is as follows:
When first commutation circuit is tested:
Afterflow reactor L is connected between the collector of an IGBT S1 and the emitter of the 2nd IGBT S2; Now, make an IGBT S1 and the 4th IGBT S4 keep turning off, the 2nd IGBT S2 keeps open-minded, apply dipulse to the 3rd IGBT S3, that is: make the 3rd IGBT S3 open-minded in the t0 moment, the t1 moment turns off, the t2 moment is again open-minded, and the t3 moment turns off again; As shown in Figure 2, be the first commutation circuit experimental waveform figure of the present invention; In Fig. 2, Vpulse is the driving voltage of the 3rd IGBT S3, and Ic is the electric current flowing through the 3rd IGBTS3 collector; Vce represents the voltage between the 3rd IGBT S3 collector and emitter, i.e. the terminal voltage of the 3rd IGBT S3;
The t0 moment the 3rd, IGBT S3 was open-minded, and the anode DC+ of stack bus bar is discharged to end points DC0 by afterflow reactor L, and Ic linearly rises; As seen from Figure 1, now Cs1 and L
σ 1+ L+L
σ 4+ L
s3+ L
σ 6+ L
d2+ L
σ 3composition LC parallel resonance, Ic shows as damped oscillation.T1 and the t3 moment the 3rd, IGBT S3 turned off, and flowed through the anti-paralleled diode afterflow of electric current by first, second IGBT S1, S2 of afterflow reactor L, and Ic is energy storage in stray inductance and the first resonant capacitance Cs1 resonance, and finally decays to 0.The t2 moment the 3rd, IGBT S3 was again open-minded, and the electric current in afterflow reactor L flows to end points DC0 by the 3rd IGBT S3, and the anti-paralleled diode of an IGBT S1 enters reversely restoring process, and now an IGBT S1 is equivalent to open-minded; The random thoughts L in LC resonant circuit can be obtained thus
1=L
σ 1+ [L//(L
s1+ L
s2)]+L
σ 4+ L
s3+ L
σ 6+ L
d2+ L
σ 3, L/ in formula/(L
s1+ L
s2) represent that the equivalent random thoughts of first, second IGBT S1, S2 are in parallel with L again after connecting, usual L
s1+ L
s2differ at three number magnitude with L, therefore L//(L
s1+ L
s2)=L
s1+ L
s2, i.e. L
1=L
σ 1+ L
s1+ L
s2+ L
σ 4+ L
s3+ L
σ 6+ L
d2+ L
σ 3, illustrate that all random thoughts are included in the first commutation circuit in the process: positive busbar, an IGBT S1, the 2nd IGBT S2, alternating current bus bar, the 3rd IGBT S3, second connect busbar, the second clamp diode D2 and zero busbar random thoughts separately.
Can be obtained by Fig. 2, the frequency of Ic electric current within the Δ t time is, f=4.5/ Δ t=730kHz, and Δ t represents the duration of 4.5 cycles shown in figure; The frequency of the parallel resonance electric current that the stray inductance that f is the first resonant capacitance Cs1 and the first commutation circuit is formed; Known first resonant capacitance Cs1=0.22uF, according to the characteristic of LC parallel resonance
then obtain the stray inductance L of whole first commutation circuit
1=1/(4Cs1 π
2f
2)=216nH.
Referring to Fig. 3, is the experimental waveform figure of conventional test methodologies first commutation circuit, waveform when namely the t2 moment the 3rd, IGBT S3 opened in Fig. 2, and in Fig. 3, Vge is the gate voltage of the 3rd IGBT S3; Δ V
cefor the changing value of S3 emitter and collector voltage; Δ I
cfor the changing value of S3 collector current; Δ t ' represents V
cekeep stable time span.According to Lenz law, L in the equivalent stray inductance of stack bus bar
σ 1, L
σ 6left positive right negative voltage can be generated, L
s1, L
s2, L
σ 4, L
s3, L
d2, L
σ 3just lower negative voltage can be induced.Now the terminal voltage Vce of the 3rd IGBT S3 shows as comparatively DC bus-bar voltage DCs and can decrease, and this voltage difference is L in the first commutation circuit
σ 1, L
s1, L
s2, L
σ 4, L
σ 6, L
d2, L
σ 3pressure drop, do not comprise L
s3the pressure drop that self random thoughts cause.Simultaneously in order to record accurate random thoughts numerical value, should ensure that Vce has stable, an obvious voltage ladder.Must ensure that Vce in t20 to the t21 time obtains a stable voltage, just require that the electric current in afterflow reactor L is enough large, certainly will to improve the supply voltage of direct supply DCs or significantly reduce the inductance value of afterflow reactor L, this just requires that IGBT needs to bear too high voltage and current in test process, and then likely causes the damage of test component.Random thoughts numerical value is drawn, L1=Δ V according to the dynamic perfromance of inductance
ce/ (Δ I
c/ Δ t ')=300V/(297A/198ns)=199nH.With method of the present invention, difference 17nH is between the two the stray inductance of the 3rd IGBT S3 self, coincide with the random thoughts value of 18nH in used IGBT ABB 5SNA 1200G450300 databook.
When second commutation circuit is tested:
Afterflow reactor L is connected between the negative electrode of the second clamp diode D2 and the collector of the 4th IGBT S4; Now, make first, second, third IGBT S1, S2, S3 keep turning off, apply dipulse to the 4th IGBT S4, that is: make the 4th IGBT S4 open-minded in the t0 ' moment, the t1 ' moment turns off, and the t2 ' moment is again open-minded, and the t3 ' moment turns off again.As shown in Figure 4, be the second commutation circuit experimental waveform figure of the present invention; In Fig. 4, Vpulse ' is the driving voltage of the 4th IGBT S4, and Ic ' is for flowing through the electric current of the 4th IGBT S4 collector; Vce ' represents the voltage between the 4th IGBT S4 collector and emitter, i.e. the terminal voltage of the 4th IGBT S4; Vge ' represents the gate voltage of the 4th IGBT S4:
T0 ' the moment the 4th, IGBT S4 was open-minded, and end points DC0 is discharged to the negative terminal DC-of stack bus bar by afterflow reactor L, and Ic ' linearly rises.As seen from Figure 1, now Cs2 and L+L
s4+ L
σ 2composition LC parallel resonance, Ic ' shows as damped oscillation.T1 ' and t3 ' moment the 4th IGBT S4 turns off, and flows through the electric current of afterflow reactor L by the second clamp diode D2 afterflow, and Ic ' is the energy storage in stray inductance and the second resonant capacitance Cs2 resonance, and finally decays to 0.T2 ' the moment the 4th, IGBT S4 was again open-minded, and the electric current in stream reactor L flows to the negative terminal DC-of stack bus bar by the 4th IGBT S4, the second clamp diode D2 enters reversely restoring process, and now the second clamp diode D2 is equivalent to open-minded.The random thoughts L in LC resonant circuit can be obtained thus
2=L
σ 3+ [L//(L
d2+ L
σ 6)]+L
s4+ L
σ 2, L/ in formula/(L
d2+ L
σ 6) represent that the second clamp diode D2, second is in parallel with L again after connecting the equivalent random thoughts series connection of busbar, usual L
d2+ L
σ 6differ at three number magnitude with L, therefore L//(L
d2+ L
σ 6)=L
d2+ L
σ 6, i.e. L
2=L
σ 3+ L
d2+ L
σ 6+ L
s4+ L
σ 2, illustrate that all random thoughts are included in the second commutation circuit in the process: zero busbar, the second clamp diode D2, second connect busbar, the 4th IGBT S4 and negative busbar random thoughts separately.
Can be obtained by Fig. 4, Ic ' electric current is at Δ t " frequency in the time is, f '=7/ Δ t "=801kHz, Δ t " represent the duration of 7 cycles shown in figure; The frequency of the parallel resonance electric current that the stray inductance that f ' is the second resonant capacitance Cs2 and the second commutation circuit is formed; Known first resonant capacitance Cs2=0.22uF, according to the characteristic of LC parallel resonance
the then stray inductance L of whole second commutation circuit
2=1/(4Cs2 π
2f
2)=177nH.The random thoughts contrasting the first commutation circuit have the difference of 39nH, mainly because the first commutation circuit comprises the random thoughts of 2 IGBT and alternating current bus bar more than the second commutation circuit, wherein 2 IGBT are approximately 36nH(and are drawn by IGBTABB 5SNA 1200G450300 databook), further illustrate the accuracy of method disclosed in the present invention.
Above embodiment is used for illustrative purposes only, but not limitation of the present invention, person skilled in the relevant technique, without departing from the spirit and scope of the present invention, various conversion or modification can also be made, therefore all equivalent technical schemes also should belong to category of the present invention, should be limited by each claim.
Claims (3)
1. the metering circuit of the commutation circuit random thoughts of a three-level current transformer, it is characterized in that, comprise an IGBT, the 2nd IGBT, the 3rd IGBT, the 4th IGBT, the first clamp diode, the second clamp diode, the first resonant capacitance, the second resonant capacitance, the first DC support electric capacity, the second DC support electric capacity, stack bus bar, direct supply and afterflow reactor, wherein:
The emitter of a described IGBT connects the collector of described 2nd IGBT; The emitter of described 2nd IGBT connects the collector of described 3rd IGBT; The emitter of described 3rd IGBT connects the collector of described 4th IGBT;
The anode of described stack bus bar connects the collector of a described IGBT, the described positive pole of the first DC support electric capacity and the positive pole of described direct supply respectively; The negative terminal of described stack bus bar connects the emitter of described 4th IGBT, the described negative pole of the second DC support electric capacity and the negative pole of described direct supply respectively;
The negative pole of described first DC support electric capacity connects the positive pole of described second DC support electric capacity;
Described first resonant capacitance and described first DC support Capacitance parallel connection;
Described second resonant capacitance and described second DC support Capacitance parallel connection;
The negative electrode of described first clamp diode connects the emitter of a described IGBT; The anode of described first clamp diode connects the negative electrode of described second clamp diode; The anode of described second clamp diode connects the collector of described 4th IGBT;
Described first clamp diode is connected the end that connects of described first DC support electric capacity and the second DC support electric capacity with the end that connects of the second clamp diode;
Between the collector that described afterflow reactor is first connected to a described IGBT and the emitter of the 2nd IGBT, after be connected between the negative electrode of described second clamp diode and the collector of described 4th IGBT;
Described stack bus bar comprises: positive busbar, negative busbar, zero busbar, alternating current bus bar, first connect busbar and be connected busbar with second, wherein:
Positive busbar connects the collector of an IGBT and the positive pole of the first DC support electric capacity;
Negative busbar connects the emitter of the 4th IGBT and the negative pole of the second DC support electric capacity;
Zero busbar connects the anode of the first clamp diode and the negative electrode of the second clamp diode;
Alternating current bus bar connects the emitter of the 2nd IGBT and the collector of the 3rd IGBT;
First connects busbar connects the emitter of an IGBT and the negative electrode of the first clamp diode;
Second connects busbar connects the collector of the 4th IGBT and the anode of the second clamp diode, and the commutation circuit of described three-level current transformer comprises the first commutation circuit and the second commutation circuit, wherein:
First commutation circuit comprises described positive busbar, an IGBT, the 2nd IGBT, alternating current bus bar, the 3rd IGBT, the second connection busbar, the second clamp diode, zero busbar and the first resonant capacitance;
Second commutation circuit comprises the second resonant capacitance, zero busbar, the second clamp diode, the second connection busbar, the 4th IGBT and negative busbar.
2. the metering circuit of the commutation circuit random thoughts of three-level current transformer according to claim 1, is characterized in that,
When testing the first commutation circuit, afterflow reactor is connected between the collector of an IGBT and the emitter of the 2nd IGBT;
When testing the second commutation circuit, afterflow reactor is connected between the negative electrode of the second clamp diode and the collector of the 4th IGBT.
3., based on a measuring method for the commutation circuit random thoughts of the three-level current transformer of metering circuit described in claim 1, it is characterized in that, comprise the following steps:
First commutation circuit is tested:
Step one, afterflow reactor is connected between the collector of an IGBT and the emitter of the 2nd IGBT; Make an IGBT and the 4th IGBT keep turning off, the 2nd IGBT keeps open-minded, and the 3rd IGBT is open-minded in the t0 moment, and the t1 moment turns off, and the t2 moment is again open-minded, and the t3 moment turns off again;
Step 2, by the opening process in t2 to t3 moment, the frequency f of the parallel resonance electric current that the stray inductance of trying to achieve the first resonant capacitance and the first commutation circuit is formed, and according to the characteristic of LC parallel resonance, obtain the stray inductance L of the first commutation circuit
1=1/ (4Cs1 π
2f
2); Wherein, Cs1 represents the capacitance of the first resonant capacitance;
Second commutation circuit is tested:
Step 3, afterflow reactor is connected between the negative electrode of the second clamp diode and the collector of the 4th IGBT; Make first, second, and third IGBT all keep turning off, the 4th IGBT S4 is open-minded in the t0 ' moment, and the t1 ' moment turns off, and the t2 ' moment is again open-minded, and the t3 ' moment turns off again;
Step 4, pass through the opening process in t2 ' to t3 ' moment, the frequency f of the parallel resonance electric current that the stray inductance of trying to achieve the second resonant capacitance and the second commutation circuit is formed ', and according to the characteristic of LC parallel resonance, obtain stray inductance L2=1/ (the 4Cs2 π of the second commutation circuit
2f
2); Wherein, Cs2 represents the capacitance of the second resonant capacitance.
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