CN106546895A - A kind of diode surge capability test circuit and its control method - Google Patents
A kind of diode surge capability test circuit and its control method Download PDFInfo
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Abstract
本发明提供了一种二极管浪涌性能测试电路及其控制方法,所述测试电路包括充电单元、RC谐振单元、整流单元和被测二极管;RC谐振单元包括串联的电容组和电感组,充电单元包括串联的电源和充电开关;RC谐振单元、整流单元和被测二极管分别并联;充电单元与电容组并联;所述方法包括:闭合充电开关,电源向电容组充电:当电容组的电压达到其预置值后断开充电开关;控制RC谐振单元向被测二极管输出浪涌电流;控制整流单元对浪涌电流整流进行浪涌测试;当浪涌测试完成后闭合反压测试开关进行耐压测试。与现有技术相比,本发明提供的一种二极管浪涌性能测试电路及其控制方法,能够向被测二极管持续输出正向浪涌电流,以测试被测二极管的重复浪涌性能。
The invention provides a diode surge performance test circuit and its control method, the test circuit includes a charging unit, an RC resonant unit, a rectifier unit and a tested diode; the RC resonant unit includes a capacitor group and an inductance group connected in series, and the charging unit A power supply and a charging switch are connected in series; an RC resonant unit, a rectifier unit and a diode to be tested are respectively connected in parallel; a charging unit is connected in parallel with a capacitor bank; Turn off the charging switch after the preset value; control the RC resonant unit to output the surge current to the diode under test; control the rectifier unit to rectify the surge current to conduct a surge test; when the surge test is completed, close the back pressure test switch to perform a withstand voltage test . Compared with the prior art, the invention provides a diode surge performance testing circuit and its control method, which can continuously output forward surge current to the tested diode to test the repeated surge performance of the tested diode.
Description
技术领域technical field
本发明涉及电力电子器件测试技术领域,具体涉及一种二极管浪涌性能测试电路及其控制方法。The invention relates to the technical field of power electronic device testing, in particular to a diode surge performance testing circuit and a control method thereof.
背景技术Background technique
随着电力电子器件的飞速发展,可控型器件反联二极管的结构被广泛应用在电力系统、机车牵引、工业变频等领。其中二极管的性能和可靠性对系统的工作能力和稳定有重要影响,因此准确合理的测试技术对二极管及系统设计使用具有重要意义。With the rapid development of power electronic devices, the structure of controllable device anti-coupled diodes is widely used in power systems, locomotive traction, industrial frequency conversion and other fields. Among them, the performance and reliability of the diode have an important impact on the working ability and stability of the system, so accurate and reasonable testing technology is of great significance to the design and use of diodes and systems.
目前,二极管的性能测试主要包括动静态参数和浪涌电流等测试。其中,标准浪涌电流测试已经被相关国家标准列为型式试验项目,测试方法也较为成熟普遍,但随着电力电子器件应用范围的日益拓展,二极管的应用工况也发生了一定变化。例如,在电力系统中二极管不仅需要承受单脉冲浪涌电流,且当系统发生短路时还要承受具有一定数量连续脉冲的浪涌电流,图1为连续脉冲浪涌电流波形示意图,如图所示,连续脉冲浪涌电流的每个浪涌电流的峰值依次小幅衰减。但是标准浪涌电流测试只适用于单脉冲浪涌电流的检测,同时现有技术中二极管测试设备也多为标准浪涌测试设备,不能有效测试通过连续脉冲浪涌电流的电力电子器件的可靠性。At present, the performance test of diodes mainly includes tests of dynamic and static parameters and surge current. Among them, the standard surge current test has been listed as a type test item by the relevant national standards, and the test method is relatively mature and common. However, with the increasing application range of power electronic devices, the application conditions of diodes have also undergone certain changes. For example, in a power system, a diode not only needs to withstand a single pulse surge current, but also a surge current with a certain number of continuous pulses when a short circuit occurs in the system. Figure 1 is a schematic diagram of the continuous pulse surge current waveform, as shown in the figure , the peak value of each surge current of the continuous pulse surge current attenuates slightly in turn. However, the standard surge current test is only suitable for the detection of single pulse surge current. At the same time, most of the diode test equipment in the prior art is standard surge test equipment, which cannot effectively test the reliability of power electronic devices passing continuous pulse surge current. .
发明内容Contents of the invention
为了克服现有技术的缺陷,本发明提供了一种二极管浪涌性能测试电路及其控制方法。In order to overcome the defects of the prior art, the invention provides a diode surge performance testing circuit and a control method thereof.
第一方面,本发明中一种二极管浪涌性能测试电路的技术方案是:In the first aspect, the technical solution of a diode surge performance test circuit in the present invention is:
所述测试电路包括充电单元、RC谐振单元、整流单元和被测二极管;所述RC谐振单元包括串联的电容组和电感组,所述充电单元包括串联的电源和充电开关;The test circuit includes a charging unit, an RC resonant unit, a rectifier unit and a tested diode; the RC resonant unit includes a capacitor group and an inductance group connected in series, and the charging unit includes a power supply and a charging switch connected in series;
所述RC谐振单元、整流单元和被测二极管分别并联;The RC resonant unit, the rectifier unit and the diode under test are respectively connected in parallel;
所述充电单元与所述电容组并联。The charging unit is connected in parallel with the capacitor bank.
进一步地,本发明提供的一个优选技术方案为:所述整流单元为可控整流单元。Furthermore, a preferred technical solution provided by the present invention is: the rectification unit is a controllable rectification unit.
进一步地,本发明提供的一个优选技术方案为:所述RC谐振单元还包括浪涌测试开关;所述浪涌测试开关连接于所述电容组与电感组之间;Further, a preferred technical solution provided by the present invention is: the RC resonance unit further includes a surge test switch; the surge test switch is connected between the capacitor group and the inductor group;
所述整流单元为可控整流单元或不可控整流单元。The rectification unit is a controllable rectification unit or an uncontrollable rectification unit.
进一步地,本发明提供的一个优选技术方案为:所述充电单元还包括反压测试开关;Further, a preferred technical solution provided by the present invention is: the charging unit further includes a back pressure test switch;
一个所述反压测试开关连接于所述电源的正极与所述被测二极管的阴极之间,另一个所述反压测试开关连接于所述电源的负极与所述被测二极管的阳极之间。One of the reverse voltage test switches is connected between the positive pole of the power supply and the cathode of the diode under test, and the other reverse voltage test switch is connected between the negative pole of the power supply and the anode of the diode under test .
第二方面,本发明中一种二极管浪涌性能测试电路控制方法的技术方案是:In the second aspect, the technical solution of a diode surge performance test circuit control method in the present invention is:
所述测试电路包括充电单元,及分别并联的RC谐振单元、整流单元和被测二极管;所述充电单元包括串联的电源和充电开关,所述电源通过反压测试开关与所述被测二极管反向并联;The test circuit includes a charging unit, an RC resonant unit, a rectifier unit, and a tested diode connected in parallel; the charging unit includes a power supply and a charging switch connected in series, and the power supply is connected to the tested diode through a reverse voltage test switch. To parallel;
所述RC谐振单元包括依次串联的电容组、浪涌测试开关和电感组,且所述整流单元为可控整流单元或不可控整流单元;或者,所述RC谐振单元包括串联的电容组和电感组,且所述整流单元为可控整流单元;The RC resonance unit includes a capacitor group, a surge test switch and an inductor group connected in series in sequence, and the rectification unit is a controllable rectification unit or an uncontrollable rectification unit; or, the RC resonance unit includes a capacitor group and an inductor connected in series group, and the rectification unit is a controllable rectification unit;
所述控制方法包括:The control methods include:
闭合所述充电开关,所述电源向所述电容组充电:当所述电容组的电压达到其预置值后断开所述充电开关,所述RC谐振单元向所述被测二极管输出浪涌电流;Closing the charging switch, the power supply charges the capacitor bank: when the voltage of the capacitor bank reaches its preset value, the charging switch is turned off, and the RC resonant unit outputs a surge to the diode under test current;
控制所述整流单元对所述浪涌电流进行整流,使得所述被测二极管持续通过正向浪涌电流,以对其进行浪涌测试;当所述浪涌测试完成后闭合所述反压测试开关,所述电源向被测二极管输出反向高压,以对其进行耐压测试。Controlling the rectification unit to rectify the surge current, so that the diode under test continues to pass through the forward surge current to perform a surge test; when the surge test is completed, close the reverse voltage test switch, and the power supply outputs a reverse high voltage to the diode under test to perform a voltage withstand test on it.
进一步地,本发明提供的一个优选技术方案为:当所述RC谐振单元包括依次串联的电容组、浪涌测试开关和电感组,且所述整流单元为可控整流单元或不可控整流单元时,所述对被测二极管进行浪涌测试包括:Further, a preferred technical solution provided by the present invention is: when the RC resonance unit includes a capacitor group, a surge test switch and an inductance group connected in series in sequence, and the rectification unit is a controllable rectification unit or an uncontrollable rectification unit , the surge test performed on the diode under test includes:
闭合所述浪涌测试开关,RC谐振单元向被测二极管输出浪涌电流;Closing the surge test switch, the RC resonance unit outputs a surge current to the diode under test;
控制所述整流单元对所述浪涌电流进行整流,使得所述被测二极管持续通过正向浪涌电流;controlling the rectification unit to rectify the surge current, so that the diode under test continues to pass through the forward surge current;
检测所述正向浪涌电流,当其脉冲数量达到预置值后断开所述浪涌测试开关。The forward surge current is detected, and the surge test switch is disconnected when the number of pulses reaches a preset value.
进一步地,本发明提供的一个优选技术方案为:当所述RC谐振单元包括串联的电容组和电感组,且所述整流单元为可控整流单元时,所述对被测二极管进行浪涌测试包括:Further, a preferred technical solution provided by the present invention is: when the RC resonance unit includes a capacitor group and an inductance group connected in series, and the rectification unit is a controllable rectification unit, the diode under test is subjected to a surge test include:
RC谐振单元向被测二极管输出浪涌电流后,控制所述整流单元对所述浪涌电流进行整流,使得所述被测二极管持续通过正向浪涌电流;After the RC resonance unit outputs the surge current to the diode under test, it controls the rectification unit to rectify the surge current, so that the diode under test continues to pass through the forward surge current;
检测所述正向浪涌电流,当其脉冲数量达到预置值后控制所述整流单元向被测二极管输出反向浪涌电流,使得二极管反向截止。The forward surge current is detected, and when the number of pulses reaches a preset value, the rectification unit is controlled to output a reverse surge current to the diode under test, so that the diode reversely cuts off.
与最接近的现有技术相比,本发明的有益效果是:Compared with the closest prior art, the beneficial effects of the present invention are:
1、本发明提供的一种二极管浪涌性能测试电路,其RC谐振单元向被测二极管放电实现向其输出浪涌电流,整流单元对该浪涌电流整流后,可以控制RC谐振单元向被测二极管持续输出正向浪涌电流,同时,可以通过设置电容组的电容值、电感组的电感值、电压值调整浪涌电流的峰值和频率;1. In the diode surge performance test circuit provided by the present invention, its RC resonant unit discharges to the tested diode to realize the output of the surge current to it, and the rectifier unit can control the RC resonant unit to output the surge current to the tested diode after rectifying the surge current. The diode continuously outputs forward surge current. At the same time, the peak value and frequency of the surge current can be adjusted by setting the capacitance value of the capacitor group, the inductance value of the inductance group, and the voltage value;
2、本发明提供的一种二极管浪涌性能测试电路控制方法,本实施例中可以通过切换充电开关和反压测试开关实现对被测二极管进行浪涌测试和反压测试,在浪涌测试结束后能够快速进行反压测试,提高了测试电路的利用率。2. A diode surge performance test circuit control method provided by the present invention, in this embodiment, the surge test and the back pressure test can be performed on the diode under test by switching the charging switch and the back pressure test switch. Afterwards, the back pressure test can be performed quickly, which improves the utilization rate of the test circuit.
附图说明Description of drawings
图1:连续脉冲浪涌电流波形示意图;Figure 1: Schematic diagram of continuous pulse surge current waveform;
图2:本发明实施例中一种二极管浪涌性能测试电路示意图;Figure 2: A schematic diagram of a diode surge performance test circuit in an embodiment of the present invention;
其中,1:电源;2:充电开关;3:电容组;4:电感组;5:浪涌测试开关;6:整流单元;7:被测二极管;8:反压测试开关。Among them, 1: power supply; 2: charging switch; 3: capacitor group; 4: inductance group; 5: surge test switch; 6: rectifier unit; 7: tested diode; 8: back pressure test switch.
具体实施方式detailed description
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地说明,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
下面结合附图,对本发明实施例提供的一种二极管浪涌性能测试电路进行说明。A diode surge performance test circuit provided by an embodiment of the present invention will be described below with reference to the accompanying drawings.
图2为本发明实施例中一种二极管浪涌性能测试电路示意图,如图所示,本实施例中二极管浪涌性能测试电路包括充电单元、RC谐振单元、整流单元6和被测二极管7。其中,FIG. 2 is a schematic diagram of a diode surge performance test circuit in an embodiment of the present invention. As shown in the figure, the diode surge performance test circuit in this embodiment includes a charging unit, an RC resonance unit, a rectification unit 6 and a diode 7 under test. in,
RC谐振单元包括串联的电容组3和电感组4,充电单元包括串联的电源1和充电开关2。The RC resonance unit includes a capacitor group 3 and an inductor group 4 connected in series, and the charging unit includes a power supply 1 and a charging switch 2 connected in series.
RC谐振单元、整流单元6和被测二极管7分别并联,充电单元与电容组3并联。The RC resonance unit, the rectification unit 6 and the diode under test 7 are respectively connected in parallel, and the charging unit and the capacitor group 3 are connected in parallel.
本实施例中RC谐振单元向被测二极管7放电实现向其输出浪涌电流,整流单元6对该浪涌电流整流后可以控制RC谐振单元向被测二极管7持续输出正向浪涌电流,如图1所示,正向浪涌电流包含多个连续的脉冲电流。同时,可以通过设置电容组的电容值、电感组的电感值、电压值调整浪涌电流的峰值和频率。In this embodiment, the RC resonant unit discharges the diode 7 under test to output a surge current thereto, and the rectifier unit 6 can control the RC resonant unit to continuously output a forward surge current to the diode 7 under test after rectifying the surge current, as shown in FIG. As shown in Figure 1, the forward surge current consists of multiple continuous pulse currents. At the same time, the peak value and frequency of the surge current can be adjusted by setting the capacitance value of the capacitor group, the inductance value and the voltage value of the inductor group.
进一步地,本实施例中二极管浪涌性能测试电路还包括可以下述结构。Further, the diode surge performance testing circuit in this embodiment may also include the following structures.
本实施例中整流单元可以采用可控整流单元,也可以采用不可控整流单元。当采用不可控整流单元时RC谐振单元还应当包括一个设置在电容组3与电感组4之间的浪涌测试开关5,当采用可控整流单元时RC谐振单元可以仅包含串联的电容组3与电感组4。The rectification unit in this embodiment may be a controllable rectification unit or an uncontrollable rectification unit. When using an uncontrollable rectifying unit, the RC resonant unit should also include a surge test switch 5 arranged between the capacitor group 3 and the inductance group 4, and when using a controllable rectifying unit, the RC resonant unit may only include the capacitor group 3 connected in series with inductance group 4.
本实施例中通过闭合浪涌测试开关5可以控制RC谐振单元向被测二极管7输出浪涌电流,当通过被测二极管7的正向浪涌电流的脉冲数量达到预置值后,可以断开浪涌测试开关5控制RC谐振单元不再向被测二极管7输出浪涌电流,结束浪涌测试。In this embodiment, by closing the surge test switch 5, the RC resonant unit can be controlled to output a surge current to the tested diode 7, and when the pulse number of the forward surge current passing through the tested diode 7 reaches a preset value, it can be disconnected. The surge test switch 5 controls the RC resonant unit to no longer output the surge current to the tested diode 7, and the surge test ends.
本实施例中整流单元6为可控整流单元,且RC谐振单元仅包含串联的电容组3与电感组4时,当通过被测二极管7的正向浪涌电流的脉冲数量达到预置值后,可以控制可控整流单元向被测二极管7输出反向浪涌电流,使得被测二极管7反向截止,结束浪涌测试。In this embodiment, the rectification unit 6 is a controllable rectification unit, and when the RC resonance unit only includes the capacitor group 3 and the inductance group 4 connected in series, when the number of pulses of the forward surge current passing through the diode 7 under test reaches a preset value , the controllable rectification unit can be controlled to output a reverse surge current to the tested diode 7, so that the tested diode 7 is cut off in reverse, and the surge test ends.
进一步地,本实施例中充电单元还包括可以下述结构。Further, the charging unit in this embodiment may also include the following structures.
本实施例中充电单元还包括反压测试开关8。其中,In this embodiment, the charging unit also includes a back pressure test switch 8 . in,
一个反压测试开关8连接于电源1的正极与被测二极管7的阴极之间,另一个反压测试开关8连接于电源1的负极与被测二极管7的阳极之间。One back pressure test switch 8 is connected between the anode of the power supply 1 and the cathode of the diode 7 under test, and the other back pressure test switch 8 is connected between the cathode of the power supply 1 and the anode of the diode 7 under test.
本实施例中在完成浪涌测试后通过闭合反压测试开关8,控制电源1向被测二极管7输出反向高压,从而对被测二极管7进行耐压测试,提高了设备利用率即间接降低了设备的使用成本。In this embodiment, after the surge test is completed, the reverse voltage test switch 8 is closed to control the power supply 1 to output a reverse high voltage to the diode 7 under test, thereby performing a voltage withstand test on the diode 7 under test, which improves the utilization rate of the equipment, that is, indirectly reduces the cost of using the equipment.
本发明还提供了一种二极管浪涌性能测试电路控制方法,并给出具体实施例。The invention also provides a diode surge performance test circuit control method, and provides specific embodiments.
本实施例中测试电路包括充电单元,及分别并联的RC谐振单元、整流单元6和被测二极管7。其中,充电单元包括串联的电源1和充电开关2,电源1通过反压测试开8关与被测二极管7反向并联。RC谐振单元包括两种拓扑结构,具体为:The test circuit in this embodiment includes a charging unit, an RC resonant unit, a rectifying unit 6 and a diode 7 connected in parallel. Wherein, the charging unit includes a power supply 1 and a charging switch 2 connected in series, and the power supply 1 is connected in antiparallel with the tested diode 7 through a back-voltage test switch 8 . The RC resonant unit includes two topologies, specifically:
(1)RC谐振单元包括依次串联的电容组3、浪涌测试开关5和电感组4,同时整流单元为6可以为可控整流单元,也可以为不可控整流单元。(1) The RC resonant unit includes a capacitor group 3, a surge test switch 5 and an inductance group 4 connected in series in sequence, and the rectification unit 6 may be a controllable rectification unit or an uncontrollable rectification unit.
(2)RC谐振单元包括串联的电容组3和电感组4,同时整流单元为可控整流单元。(2) The RC resonance unit includes a capacitor group 3 and an inductor group 4 connected in series, and the rectification unit is a controllable rectification unit.
本实施例中二极管浪涌性能测试电路控制方法可以按照下述步骤实施。The method for controlling the diode surge performance testing circuit in this embodiment can be implemented according to the following steps.
1、闭合充电开关2,电源1向电容组3充电:当电容组3的电压达到其预置值后断开充电开关2。1. Close the charging switch 2, and the power supply 1 charges the capacitor bank 3: when the voltage of the capacitor bank 3 reaches its preset value, turn off the charging switch 2.
2、RC谐振单元向被测二极管7输出浪涌电流。2. The RC resonance unit outputs surge current to the diode 7 under test.
3、控制整流单元6对浪涌电流进行整流,使得被测二极管7持续通过正向浪涌电流,以对其进行浪涌测试;当浪涌测试完成后闭合反压测试开关8,电源1向被测二极管输出反向高压,以对其进行耐压测试。3. Control the rectification unit 6 to rectify the surge current, so that the diode under test 7 continues to pass the forward surge current to perform a surge test; when the surge test is completed, close the back pressure test switch 8, and the power supply 1 will The diode under test outputs a reverse high voltage to perform a voltage withstand test on it.
本实施例中可以通过切换充电开关2和反压测试开关8实现对被测二极管7进行浪涌测试和反压测试,在浪涌测试结束后能够快速进行反压测试,提高了测试电路的利用率。In this embodiment, the surge test and the back-voltage test can be performed on the tested diode 7 by switching the charging switch 2 and the back-voltage test switch 8, and the back-voltage test can be performed quickly after the surge test is completed, which improves the utilization of the test circuit. Rate.
进一步地,本实施例中对被测二极管进行浪涌测试可以按照下述步骤实施。Further, in this embodiment, performing a surge test on the diode under test may be implemented according to the following steps.
本实施例中RC谐振单元包括依次串联的电容组3、浪涌测试开关5和电感组5,同时整流单元6为可控整流单元或不可控整流单元时。对被测二极管进行浪涌测试具体为:In this embodiment, the RC resonance unit includes a capacitor group 3 , a surge test switch 5 and an inductance group 5 connected in series in sequence, and the rectification unit 6 is a controllable rectification unit or an uncontrollable rectification unit. The surge test for the diode under test is specifically as follows:
1、闭合浪涌测试开关5,RC谐振单元向被测二极管7输出浪涌电流。1. Close the surge test switch 5, and the RC resonance unit outputs a surge current to the diode 7 under test.
2、控制整流单元6对浪涌电流进行整流,使得被测二极管7持续通过正向浪涌电流。2. Control the rectification unit 6 to rectify the surge current, so that the diode under test 7 continues to pass the forward surge current.
3、检测正向浪涌电流,当其脉冲数量达到预置值后断开浪涌测试开关。3. Detect the forward surge current, and disconnect the surge test switch when the number of pulses reaches the preset value.
本实施例中通过闭合浪涌测试开关5可以控制RC谐振单元向被测二极管7输出浪涌电流,当通过被测二极管7的正向浪涌电流的脉冲数量达到预置值后,可以断开浪涌测试开关5控制RC谐振单元不再向被测二极管7输出浪涌电流,结束浪涌测试。In this embodiment, by closing the surge test switch 5, the RC resonant unit can be controlled to output a surge current to the tested diode 7, and when the pulse number of the forward surge current passing through the tested diode 7 reaches a preset value, it can be disconnected. The surge test switch 5 controls the RC resonant unit to no longer output the surge current to the tested diode 7, and the surge test ends.
进一步地,本实施例中对被测二极管进行浪涌测试还可以按照下述步骤实施。Further, the surge test of the diode under test in this embodiment may also be implemented according to the following steps.
本实施例中RC谐振单元包括串联的电容组3和电感组4,同时,整流单元为可控整流单元。对被测二极管进行浪涌测试具体为:In this embodiment, the RC resonance unit includes a capacitor group 3 and an inductor group 4 connected in series, and the rectification unit is a controllable rectification unit. The surge test for the diode under test is specifically as follows:
1、RC谐振单元向被测二极管7输出浪涌电流,控制整流单元6对浪涌电流进行整流,使得被测二极管7持续通过正向浪涌电流。1. The RC resonant unit outputs a surge current to the diode under test 7, and controls the rectification unit 6 to rectify the surge current, so that the diode under test 7 continues to pass through the forward surge current.
2、检测正向浪涌电流,当其脉冲数量达到预置值后控制整流单元6向被测二极管输出反向浪涌电流,使得二极管反向截止。2. Detect the forward surge current, and when the number of pulses reaches a preset value, control the rectifier unit 6 to output a reverse surge current to the diode under test, so that the diode reversely cuts off.
本实施例中整流单元6为可控整流单元,且RC谐振单元仅包含串联的电容组3与电感组4时,当通过被测二极管7的正向浪涌电流的脉冲数量达到预置值后,可以控制可控整流单元向被测二极管7输出反向浪涌电流,使得被测二极管7反向截止,结束浪涌测试。In this embodiment, the rectification unit 6 is a controllable rectification unit, and when the RC resonance unit only includes the capacitor group 3 and the inductance group 4 connected in series, when the number of pulses of the forward surge current passing through the diode 7 under test reaches a preset value , the controllable rectification unit can be controlled to output a reverse surge current to the tested diode 7, so that the tested diode 7 is cut off in reverse, and the surge test ends.
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies thereof, the present invention also intends to include these modifications and variations.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109164369A (en) * | 2018-09-03 | 2019-01-08 | 广东电网有限责任公司 | A kind of the test circuit and on-line testing method of heavy-duty diode |
CN109239570A (en) * | 2018-10-31 | 2019-01-18 | 中国振华集团永光电子有限公司(国营第八七三厂) | A kind of diode forward current surge experimental circuit |
CN111693839A (en) * | 2020-06-17 | 2020-09-22 | 西安交通大学 | Method for distinguishing degradation reason of SiC MOSFET under repeated surge current of body diode |
CN114814511A (en) * | 2022-03-31 | 2022-07-29 | 北京时代民芯科技有限公司 | A diode high current surge test system and method |
CN115389900A (en) * | 2022-09-16 | 2022-11-25 | 合肥工业大学 | Surge current test circuit and charging and discharging method based on SiC MOSFET |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2810090Y (en) * | 2005-07-15 | 2006-08-23 | 东莞市前锋电子有限公司 | An electromagnetic oven controller with novel protection circuit |
CN101226217A (en) * | 2007-01-18 | 2008-07-23 | 宝山钢铁股份有限公司 | Instrument for detecting breaking characteristic of current limiting fuse |
CN101334429A (en) * | 2007-06-28 | 2008-12-31 | 鸿富锦精密工业(深圳)有限公司 | Surge electric current test circuit |
CN202075333U (en) * | 2011-05-09 | 2011-12-14 | 深圳市航嘉驰源电气股份有限公司 | Surge current tester |
CN102540042A (en) * | 2011-12-09 | 2012-07-04 | 绍兴文理学院 | Detecting circuit for performance of high-voltage rectifying diode |
CN104865513A (en) * | 2015-06-05 | 2015-08-26 | 山东晶导微电子有限公司 | Surge current testing circuit with function of detection |
CN105486988A (en) * | 2014-10-09 | 2016-04-13 | 江苏中科君芯科技有限公司 | Device and method for withstand voltage test of induction cooker IGBT |
-
2016
- 2016-10-13 CN CN201610893731.2A patent/CN106546895B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2810090Y (en) * | 2005-07-15 | 2006-08-23 | 东莞市前锋电子有限公司 | An electromagnetic oven controller with novel protection circuit |
CN101226217A (en) * | 2007-01-18 | 2008-07-23 | 宝山钢铁股份有限公司 | Instrument for detecting breaking characteristic of current limiting fuse |
CN101334429A (en) * | 2007-06-28 | 2008-12-31 | 鸿富锦精密工业(深圳)有限公司 | Surge electric current test circuit |
CN202075333U (en) * | 2011-05-09 | 2011-12-14 | 深圳市航嘉驰源电气股份有限公司 | Surge current tester |
CN102540042A (en) * | 2011-12-09 | 2012-07-04 | 绍兴文理学院 | Detecting circuit for performance of high-voltage rectifying diode |
CN105486988A (en) * | 2014-10-09 | 2016-04-13 | 江苏中科君芯科技有限公司 | Device and method for withstand voltage test of induction cooker IGBT |
CN104865513A (en) * | 2015-06-05 | 2015-08-26 | 山东晶导微电子有限公司 | Surge current testing circuit with function of detection |
Non-Patent Citations (1)
Title |
---|
赵玉贵: ""车用雪崩整流二极管反向重复峰值浪涌电流的测试"", 《汽车电器测试设备》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109164369A (en) * | 2018-09-03 | 2019-01-08 | 广东电网有限责任公司 | A kind of the test circuit and on-line testing method of heavy-duty diode |
CN109239570A (en) * | 2018-10-31 | 2019-01-18 | 中国振华集团永光电子有限公司(国营第八七三厂) | A kind of diode forward current surge experimental circuit |
CN111693839A (en) * | 2020-06-17 | 2020-09-22 | 西安交通大学 | Method for distinguishing degradation reason of SiC MOSFET under repeated surge current of body diode |
CN114814511A (en) * | 2022-03-31 | 2022-07-29 | 北京时代民芯科技有限公司 | A diode high current surge test system and method |
CN115389900A (en) * | 2022-09-16 | 2022-11-25 | 合肥工业大学 | Surge current test circuit and charging and discharging method based on SiC MOSFET |
CN115389900B (en) * | 2022-09-16 | 2024-04-12 | 合肥工业大学 | Inrush current test circuit and charging and discharging method based on SiC MOSFET |
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