CN204925331U

CN204925331U - Two pulse switch capability test devices of IGBT power unit

Info

Publication number: CN204925331U
Application number: CN201520719010.0U
Authority: CN
Inventors: 周志华; 蔡罗强; 陈鸿蔚; 黄兴; 郭启明
Original assignee: Xiangtan Electric Manufacturing Co Ltd
Current assignee: Xiangtan Electric Manufacturing Co Ltd
Priority date: 2015-09-17
Filing date: 2015-09-17
Publication date: 2015-12-30
Anticipated expiration: 2025-09-17

Abstract

The utility model relates to a two pulse switch capability test devices of IGBT power unit, it includes impulse sender, impulse sender includes host computer and two pulse control wares, the host computer is pulse width, sets up the interval time between blind spot time and the dipulse according to the pulse parameter that the type of the IGBT power unit major loop of examination that awaits measuring and IGBT power unit's voltage, current level, the hollow load reactor of examination of awaiting measuring calculated the dipulse, two pulse control wares are handled according to the pulse parameter of host computer conveying and with the drive plate of two impulse waveform signal transmission to IGBT power unit. The utility model discloses your change over switch has added, can to different kinds of IGBT power unit for example two level or three level IGBT power unit carry out the dipulse test, this device circuit structure simply, convenient operation, with low costs.

Description

A kind of IGBT power cell dipulse switch performance proving installation

Technical field

The utility model relates to applied power electronics field, is specifically related to a kind of IGBT power cell dipulse switch performance proving installation.

Background technology

Along with the development of Power Electronic Technique and application constantly expand, IGBT device (Insulated Gate Bipolar transistor) due to himself superior function application more and more extensive, the type of the power cell major loop designed by IGBT device, no matter two level-types of usual structure, still day by day ripe three level type or many level-types, its main loop design is all more crucial, how to grasp the transient switching characteristics of IGBT power cell, judge the effect of the degree that IGBT drive plate parameter is mated with IGBT device and absorbing circuit, all be related to IGBT power cell and can current transformer run reliably and with long-term, at present, to the test of IGBT power cell, a kind of is mode IGBT power cell being adopted together with current transformer capacity operation, detect waveform when running, this proving installation is not only lost time, the consumption energy is too much, and there is larger risk, another kind sends continuous print pulse or the fixed pulse drive plate to IGBT power cell by Pulse Width Control plate or waveform generator, test for a certain specific voltage or major loop, and on single-phase to IGBT power cell brachium pontis, when lower brachium pontis carries out converted measurement, the connection of air reactor and IGBT power cell both positive and negative polarity must be exchanged, this kind of test mode, being not only for specific voltage and major loop is two multilevel type, the voltage of test I GBT power cell, range of current is limited, and the single-phase upper brachium pontis of test I GBT power cell, air reactor need be reconnected during lower brachium pontis, whole measuring process is complicated and adjustment test parameter is inconvenient, and air reactor part is also for specific IGBT power cell customization, versatility is bad.

Utility model content

In order to solve the problem, the purpose of this utility model is to provide a kind of structure simple and the device that can carry out the test of dipulse switch performance to the IGBT power cell of multiple major loop structure.

The technical solution of the utility model is, a kind of IGBT power cell dipulse switch performance proving installation, it comprises pulse transmitter, described pulse transmitter comprises host computer and double-pulse controller, the type of described host computer according to IGBT power cell major loop to be tested and the voltage of IGBT power cell to be tested, current class, hollow load reactance device calculates pulse parameter and the pulse width of dipulse, interval time between Dead Time and dipulse is set, described double-pulse controller carries out processing according to the pulse parameter that host computer transmits and dipulse waveform signal is sent to the drive plate of IGBT power cell.

When conveniently the single-phase upper brachium pontis of IGBT power cell, lower brachium pontis carry out converted measurement, exchange the connection of air reactor and IGBT power cell both positive and negative polarity, two position conversion switch are also comprised in this proving installation, the end of convert of described two position conversion switch connects one end of air reactor, controlled it by external gauge tap, the other two ends of two position conversion switch connect IGBT power cell positive pole and negative pole respectively.

In order to the difference for different I GBT power cell voltage, current class, the test of IGBT power cell dipulse switch performance needs the air reactor of different numerical value, and described air reactor is the adjustable air reactor of reactance value.

The beneficial effects of the utility model are: can carry out dipulse test to dissimilar IGBT power cell such as two level or three level IGBT power cell, different order parameters is sent to impulse controller according to dissimilar IGBT power cell by host computer, parameter adjustment is flexible, especially facilitate the single-phase upper brachium pontis of IGBT power cell, lower brachium pontis carries out converted measurement, two position conversion switch are added in this proving installation, for different I GBT power cell voltage, the difference of current class, REgulatable reactor is adopted to air reactor, this device circuit structure is simple, easy to operate, cost is low.

Accompanying drawing explanation

Fig. 1 is that the utility model is with the circuit structure block diagram of neutral point clamp three level IGBT power cell embodiment.

Embodiment

Below in conjunction with drawings and Examples, the utility model is further described.

With reference to accompanying drawing, a kind of IGBT power cell dipulse switch performance proving installation, it comprises pulse transmitter 1, air reactor 2, two position conversion switch 3 and IGBT power cell 4, described pulse transmitter 1 is connected with IGBT power cell 4, described pulse transmitter 1 comprises host computer 1-1 and double-pulse controller 1-2, the type of described host computer 1-1 according to IGBT power cell 4 major loop to be tested and the voltage of IGBT power cell 4 to be tested, current class, hollow load reactance device 2 calculates pulse parameter and the pulse width of dipulse, interval time between Dead Time and dipulse is set, described double-pulse controller 1-2 carries out processing according to the pulse parameter that host computer 1-1 transmits and dipulse waveform signal is sent to the drive plate of IGBT power cell 4, the conveniently single-phase upper brachium pontis of IGBT power cell 4, when lower brachium pontis carries out converted measurement, exchange air reactor 2 and IGBT power cell 4 are just, the connection of negative pole, the end of convert of described two position conversion switch 3 connects one end of air reactor 2, by external gauge tap, it is controlled, the other two ends of two position conversion switch 3 connect positive pole and the negative pole of IGBT power cell 4 respectively, the single-phase upper brachium pontis of IGBT power cell 4 during test, lower brachium pontis carries out converted measurement, only need stir the gauge tap of two position conversion switch 3, do not need the connection of dismounting air reactor 2 again, described air reactor 2 is the adjustable air reactor of reactance value.

Testing process is: the type of first clear and definite IGBT power cell 4, illustrate for Fig. 1 neutral point clamp three level IGBT power cell, the voltage of test is needed according to IGBT power cell 4, current class, the inductance value of air reactor 2 is selected in the analytical calculation of gating pulse width, connect test IGBT power cell 4 high-low pressure test loop, the upper brachium pontis of a certain phase of IGBT power cell 4 or lower brachium pontis is selected to test by two position conversion switch 3, all the other do not carry out the IGBT drive plate tested, its input signal all with ground short circuit, IGBT is in off state, four-way high bandwidth oscilloscope is utilized to coordinate High Pressure Difference sub-probe and Luo-coil probe, measure the voltage waveform between CE when the gate-drive waveform of tested IGBT power cell 4 and IGBT power cell 4 are opened or turned off respectively, measure the electric current flowing through air reactor 2, host computer 1-1 according to IGBT power cell 4 and test voltage, current class, pulse width and dead time parameter are sent to double-pulse controller 1-2 by connection dipulse pulse width information, double-pulse controller 1-2 exports pwm pulse to IGBT power cell 4 drive plate by optical fiber interface or electric current loop interface, host computer 1-1 sets pulse parameter, after having checked that circuit is errorless, treat that IGBT power cell 4 DC support capacitor charging is complete, disconnect main power switch, button is sent by host computer 1-1, dipulse signal through host computer 1-1 to double-pulse controller 1-2, arrive IGBT power cell 4 drive plate again, control IGBT power cell 4 open shutoff twice, by the voltage of paired observation oscillograph recording, current measurement waveform, judge the rationality of IGBT power cell 4 major loop, the matching of IGBT drive plate and IGBT and the effect of IGBT power cell 4 absorbing circuit, if test effect is undesirable, adjustable related device or parameter re-start dipulse test, to another one half brachium pontis of the same phase of test I GBT power cell 4, only need stir two position conversion switch 3, change the connection of air reactor 2, the input signal of corresponding IGBT power cell 4 drive plate can be tested again.

Claims

1. an IGBT power cell dipulse switch performance proving installation, it comprises pulse transmitter, it is characterized in that, described pulse transmitter comprises host computer and double-pulse controller, the type of described host computer according to IGBT power cell major loop to be tested and the voltage of IGBT power cell to be tested, current class, hollow load reactance device calculates pulse parameter and the pulse width of dipulse, interval time between Dead Time and dipulse is set, described double-pulse controller carries out processing according to the pulse parameter that host computer transmits and dipulse waveform signal is sent to the drive plate of IGBT power cell.

2. a kind of IGBT power cell dipulse switch performance proving installation according to claim 1, it is characterized in that, also comprise two position conversion switch, the end of convert of described two position conversion switch connects one end of air reactor, controlled it by external gauge tap, the other two ends of two position conversion switch connect IGBT power cell positive pole and negative pole respectively.

3. according to a kind of IGBT power cell dipulse switch performance proving installation according to claim 1 or claim 2, it is characterized in that, described air reactor is the adjustable air reactor of reactance value.