CN203788256U - Open control device used in breaker simulation instrument - Google Patents
Open control device used in breaker simulation instrument Download PDFInfo
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- CN203788256U CN203788256U CN201320868278.1U CN201320868278U CN203788256U CN 203788256 U CN203788256 U CN 203788256U CN 201320868278 U CN201320868278 U CN 201320868278U CN 203788256 U CN203788256 U CN 203788256U
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- 238000004088 simulation Methods 0.000 title abstract 3
- 239000003381 stabilizer Substances 0.000 claims abstract description 9
- 230000005669 field effect Effects 0.000 claims description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 230000005622 photoelectricity Effects 0.000 claims description 19
- 102100022299 All trans-polyprenyl-diphosphate synthase PDSS1 Human genes 0.000 claims description 9
- 101150115672 DPS1 gene Proteins 0.000 claims description 9
- 101150063720 PDSS1 gene Proteins 0.000 claims description 9
- 238000009413 insulation Methods 0.000 abstract 2
- 230000009977 dual effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 101150115013 DSP1 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The utility model discloses an open control device used in a breaker simulation instrument; the open control device comprises an open control circuit; the open control circuit comprises a first resistor, a second resistor, a third resistor, a metal-oxide-semiconductor-field effect transistor (MOSFET), a photoelectric MOSFET driver, an insulation gate bipolar transistor, a voltage-stabiliser tube, a piezoresistor and an electromagnetic relay; the insulation gate bipolar transistor, a first auxiliary blank node of the electromagnetic relay and a second auxiliary blank node of the electromagnetic relay are designed in parallel so as to improve motion speed of the nodes, output node capacity can be also ensured, thereby satisfying dual requirements of speed and capacity of the output node by the breaker simulation instrument.
Description
Technical field
The utility model relates to a kind of control device of outputing, and is specifically related to the control device of outputing using on a kind of circuit breaker emulating instrument.
Background technology
Along with the large-scale promotion of intelligent substation, the intelligentized on-line monitoring of primary equipment has obtained increasing concern.Scale application along with on-line monitoring equipment, becomes extremely important to the perfect of the means of testing of on-line monitoring equipment.On-line monitoring equipment relies on primary equipment, the most perfect research technique is that band primary equipment is done experiment together, add high voltage or large electric current, but this mode has following shortcoming: the first, and experimentation cost is very high, and second, test period is long, the 3rd, due to the randomness of test, test can not reflect all situations.
Circuit breaker emulating instrument is exactly the product based on above background research and development, and it can be simulated actual circuit breaker and use as detecting corollary equipment.Because meet, the difference of various checkout equipments is detected to demand, circuit breaker emulating instrument is to the existing action rapidity requirement of the output node of mimic-disconnecting switch, as common action delay requires, in 1 millisecond, also have the requirement of capacity, both kept electric current may reach 4A left and right.
In electric power system at present, widely used all kinds of protection measure and control devices are used the empty node of electromagnetic relay as outputing output node conventionally; the capacity of electromagnetic relay can reach 4A conventionally; what have even can arrive about 8A; but the responsiveness of electromagnetic relay all more than 4 milliseconds, can not meet circuit breaker emulating instrument to output node rapidity requirement conventionally.IGBT, as Novel power semiconductor field control self-turn-off device, has high speed performance, obtain the utmost point and apply widely, but IGBT capacity is less, and can not bear reverse voltage in various power converters, can not meet the requirement of circuit breaker emulating instrument to output node capacity.Therefore existing protection measure and control device can not meet the double requirements of circuit breaker emulating instrument to the speed of output node and capacity.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the utility model provides a kind of circuit breaker emulating instrument, has solved existing protection measure and control device and can not meet the problem of circuit breaker emulating instrument to the double requirements of the speed of output node and capacity.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is:
That on a kind of circuit breaker emulating instrument, uses outputs control device, it is characterized in that, comprise and output control circuit, the described control circuit of outputing comprises the first resistance, the second resistance, the 3rd resistance, metal-oxide half field effect transistor, photoelectricity mosfet driver, insulated gate bipolar transistor, voltage-stabiliser tube, piezo-resistance and electromagnetic relay, described first resistance one end is input node, the other end is connected with input pin 1 pin of photoelectricity mosfet driver, input pin 2 pin of described photoelectricity mosfet driver are extremely connected with the d of metal-oxide half field effect transistor, the g utmost point of described metal-oxide half field effect transistor is by the second grounding through resistance, the g of described metal-oxide half field effect transistor is control inputs node very, the s utmost point ground connection of described metal-oxide half field effect transistor, output pin 8 pin of described photoelectricity mosfet driver are extremely connected with the e of insulated gate bipolar transistor, output pin 7 pin of described photoelectricity mosfet driver are extremely connected with the g of insulated gate bipolar transistor, between the g utmost point of insulated gate bipolar transistor and the e utmost point, be connected with the 3rd resistance, between the c utmost point of described insulated gate bipolar transistor and the e utmost point, be connected in parallel to voltage-stabiliser tube, piezo-resistance, the first secondary empty node of electromagnetic relay, the second secondary empty node of electromagnetic relay, the c utmost point of described insulated gate bipolar transistor and e be output node very.
Beneficial effect: the utility model can improve the responsiveness of node by the first secondary empty node of insulated gate bipolar transistor, electromagnetic relay and the second secondary empty node Parallel Design of electromagnetic relay, also can guarantee the capacity of output node, meet the double requirements of circuit breaker emulating instrument to the speed of output node and capacity.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As shown in Figure 1, that on a kind of circuit breaker emulating instrument, uses outputs control device, it is characterized in that, comprise and output control circuit, the described control circuit of outputing comprises the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, metal-oxide half field effect transistor U1, photoelectricity mosfet driver U2A, insulated gate bipolar transistor U3, voltage-stabiliser tube Z1, piezo-resistance VR1 and electromagnetic relay DPS1.Described first resistance R 1 one end is input node, the other end is connected with input pin 1 pin of photoelectricity mosfet driver U2A, input pin 2 pin of described photoelectricity mosfet driver U2A are extremely connected with the d of metal-oxide half field effect transistor U1, the g utmost point of described metal-oxide half field effect transistor U1 is by the second resistance R 2 ground connection, the g of described metal-oxide half field effect transistor U1 is control inputs node very, the s utmost point ground connection of described metal-oxide half field effect transistor U1, output pin 8 pin of described photoelectricity mosfet driver U2A are extremely connected with the e of insulated gate bipolar transistor U3, output pin 7 pin of described photoelectricity mosfet driver U2A are extremely connected with the g of insulated gate bipolar transistor U3, between the g utmost point of insulated gate bipolar transistor U3 and the e utmost point, be connected with the 3rd resistance R 3, between the c utmost point of described insulated gate bipolar transistor U3 and the e utmost point, be connected in parallel to voltage-stabiliser tube Z1, piezo-resistance VR1, the first secondary empty node DSP1B of electromagnetic relay DPS1, the second secondary empty node DSP1C of electromagnetic relay DPS1, the c utmost point of described insulated gate bipolar transistor U3 and e be output node very.
When circuit breaker emulating instrument need to be exported when outputing, the g utmost point of metal-oxide half field effect transistor U1 is input as high level, metal-oxide half field effect transistor U1 conducting, the d utmost point of metal-oxide half field effect transistor U1 and the conducting of the s utmost point, the c utmost point of metal-oxide half field effect transistor U1 is by e utmost point ground connection, control node input node input high level simultaneously, make photoelectricity mosfet driver U2A conducting, the upper voltage that obtains of the output of photoelectricity mosfet driver U2A (being the g utmost point and the e utmost point of insulated gate bipolar transistor U3), insulated gate bipolar transistor U3 conducting, the c utmost point of insulated gate bipolar transistor U3 and the conducting of the e utmost point, output the output node conducting in loop.Because 25 nanoseconds of ON time average out to of metal-oxide half field effect transistor U1,27 nanoseconds of average out to operate time of insulated gate bipolar transistor U3, average out to 280 microseconds operate time of photoelectricity mosfet driver U2A, therefore in 400 microseconds, obviously meet the quick acting index of 1 millisecond total operate time.
In input node input high level, closed electromagnetic relay DSP1, the first secondary empty node DSP1B and the second secondary empty node DSP1C are closed about the time of 5 milliseconds of left and right, after closure, short circuit the c utmost point and the e utmost point of insulated gate bipolar transistor U3, electric current after output node closure flows through between the first secondary empty node DSP1B and the second secondary empty node DSP1C, insulated gate bipolar transistor U3 will can not bear large electric current, output node capacity will depend on the capacity (conventionally 8 amperes of left and right) of the first secondary empty node DSP1B and the second secondary empty node DSP1C, therefore meet capacity requirement.
Described voltage-stabiliser tube Z1, piezo-resistance VR1 are when the c utmost point of insulated gate bipolar transistor U3 and the voltage between e level surpass maximum when bearing voltage; voltage-stabiliser tube Z1 starts working; piezo-resistance VR1 punctures; by voltage clamp within insulated gate bipolar transistor U3 can tolerance range, thereby the not breakdown damage of protection insulated gate bipolar transistor U3.
In sum output outputing control circuit and can improve the responsiveness of node by the first secondary empty node DSP1B of insulated gate bipolar transistor U3, electromagnetic relay DPS1 and the second secondary empty node DSP1C Parallel Design of electromagnetic relay DPS1 in control device, also can guarantee the capacity of output node, meet the double requirements of circuit breaker emulating instrument to the speed of output node and capacity.
The above photoelectricity mosfet driver U2A selects the ASSR-V622 of U.S.'s Avago Technologies (AVAGO) company, insulated gate bipolar transistor U3 selects the IRG4BC20S of company of U.S. Int Rectifier Corp (IR), and electromagnetic relay DPS1 selects the DSP1a model of PANASONIC.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; do not departing under the prerequisite of the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (1)
1. that on a circuit breaker emulating instrument, uses outputs control device, it is characterized in that, comprise and output control circuit, the described control circuit of outputing comprises the first resistance (R1), the second resistance (R2), the 3rd resistance (R3), metal-oxide half field effect transistor (U1), photoelectricity mosfet driver (U2A), insulated gate bipolar transistor (U3), voltage-stabiliser tube (Z1), piezo-resistance (VR1) and electromagnetic relay (DPS1);
Described the first resistance (R1) one end is input node, the other end is connected with input pin 1 pin of photoelectricity mosfet driver (U2A), input pin 2 pin of described photoelectricity mosfet driver (U2A) are extremely connected with the d of metal-oxide half field effect transistor (U1), the g utmost point of described metal-oxide half field effect transistor (U1) is by the second resistance (R2) ground connection, the g of described metal-oxide half field effect transistor (U1) is control inputs node very, the s utmost point ground connection of described metal-oxide half field effect transistor (U1), output pin 8 pin of described photoelectricity mosfet driver (U2A) are extremely connected with the e of insulated gate bipolar transistor (U3), output pin 7 pin of described photoelectricity mosfet driver (U2A) are extremely connected with the g of insulated gate bipolar transistor (U3), between the g utmost point of insulated gate bipolar transistor (U3) and the e utmost point, be connected with the 3rd resistance (R3), between the c utmost point of described insulated gate bipolar transistor (U3) and the e utmost point, be connected in parallel to voltage-stabiliser tube (Z1), piezo-resistance (VR1), the first secondary empty node (DSP1B) of electromagnetic relay (DPS1), the second secondary empty node (DSP1C) of electromagnetic relay (DPS1), the c utmost point of described insulated gate bipolar transistor (U3) and e be output node very.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320868278.1U CN203788256U (en) | 2013-12-26 | 2013-12-26 | Open control device used in breaker simulation instrument |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320868278.1U CN203788256U (en) | 2013-12-26 | 2013-12-26 | Open control device used in breaker simulation instrument |
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| Publication Number | Publication Date |
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| CN203788256U true CN203788256U (en) | 2014-08-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320868278.1U Expired - Fee Related CN203788256U (en) | 2013-12-26 | 2013-12-26 | Open control device used in breaker simulation instrument |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107924872A (en) * | 2016-02-18 | 2018-04-17 | 富士电机株式会社 | Insulated gate semiconductor device |
| CN112816917A (en) * | 2021-04-16 | 2021-05-18 | 成都工百利自动化设备有限公司 | Transformer impact monitoring device |
-
2013
- 2013-12-26 CN CN201320868278.1U patent/CN203788256U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107924872A (en) * | 2016-02-18 | 2018-04-17 | 富士电机株式会社 | Insulated gate semiconductor device |
| CN112816917A (en) * | 2021-04-16 | 2021-05-18 | 成都工百利自动化设备有限公司 | Transformer impact monitoring device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140820 Termination date: 20201226 |