CN108649785A - Two level converter the dead time method of SiC MOSFET three-phases - Google Patents
Two level converter the dead time method of SiC MOSFET three-phases Download PDFInfo
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- CN108649785A CN108649785A CN201810549178.XA CN201810549178A CN108649785A CN 108649785 A CN108649785 A CN 108649785A CN 201810549178 A CN201810549178 A CN 201810549178A CN 108649785 A CN108649785 A CN 108649785A
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- dead time
- sic mosfet
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
- H02M1/385—Means for preventing simultaneous conduction of switches with means for correcting output voltage deviations introduced by the dead time
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of two level converter the dead time methods of SiC MOSFET three-phases, include the following steps：Obtain the output current per phase bridge arm midpoint；Judge the polarity of output current, and determines the initiative of phase the bridge arm switch on the bridge pipe and bridge switch pipe according to the polarity of output current；SiC MOSFET and its parameter information of driving plate are obtained, and preposition dead time and postposition dead time are calculated according to parameter information；Dead time before active switch pipe is opened is set as N times of preposition dead time, wherein 1.5<N<2.5；Current upper limit value and floor level of electric current are set, and minimum dead time and maximum dead time are calculated according to current upper limit value and floor level of electric current；The absolute value of output current is compared with the absolute value of the absolute value of current upper limit value and floor level of electric current, and the dead time after the shutdown of active switch pipe is set as by postposition dead time, minimum dead time or maximum dead time according to comparison result.
Description
Technical field
The present invention relates to converter technical field, more particularly to a kind of two level converter dead zone of SiC MOSFET three-phases is set
Set method.
Background technology
With SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal
Oxide semiconductor field effect transistor) etc. wide band gap semiconductor devices appearance, power electronic equipment can have more
Advantage：It is higher operating voltage, the power of bigger, smaller volume, the power density of bigger, higher switching frequency, lower
Be lost, higher operating temperature etc..These advantages make SiC MOSFET power electronic equipments be more applicable for electric motor car,
The mesolows application field such as electric airplane, generation of electricity by new energy, microgrid.Wherein two level converter of SiC MOSFET three-phases, due to
Its simple topology and control strategy are current most promising SiC MOSFET converters.However SiC MOSFET are in three-phase
Although the use of two level converters can bring many advantages, problem is brought to its dead time.
Although traditional fixation dead zone plan of establishment still can guarantee the reliable of two level converter of SiC MOSFET three-phases
Property, but larger loss and output voltage can be brought to lose.The dead zone on SiC MOSFET converters is applied to set at present
It sets there are mainly two types of schemes：The first allows for make full use of SiC MOSFET channel impedance ratio diode impedances small excellent
Gesture reduces the plan of establishment in dead zone as far as possible, although this scheme can reduce diode continuousing flow loss, but is possible to bring
Larger SiC MOSFET output capacitances loss, and reduce the reliability of system；Second scheme reduces two poles simultaneously
Pipe afterflow is lost to be lost with SiC MOSFET output capacitances, but needs additional dead zone selection circuit, increase system at
Sheet and complexity.
Invention content
The present invention is directed to solve one of the technical problem in above-mentioned technology at least to a certain extent.For this purpose, the present invention
Purpose is to propose a kind of two level converter the dead time method of SiC MOSFET three-phases, can not only reduce diode and damage
Consumption, output capacitance loss and output voltage loss, and structure can be reduced and the complexity of logic is set, it is simple and convenient, at
This is relatively low.
In order to achieve the above objectives, the present invention proposes a kind of two level converter the dead time side of SiC MOSFET three-phases
Method, two level converter of the three-phase include three-phase bridge arm, and the switch on the bridge pipe and bridge switch pipe per phase bridge arm are SiC
MOSFET uses identical the dead time method, the dead time method to include the following steps per phase bridge arm：It obtains per phase bridge
The output current at arm midpoint；Judge the polarity of the output current, and the phase bridge arm is determined according to the polarity of the output current
The initiative of switch on the bridge pipe and bridge switch pipe；Obtain the SiC MOSFET and its parameter information of driving plate, and according to
The parameter information calculates preposition dead time and postposition dead time；Dead time before active switch pipe is opened is set as
N times of the preposition dead time, wherein 1.5<N<2.5；Current upper limit value and floor level of electric current are set, and according to the electricity
It flows upper limit value and the floor level of electric current calculates minimum dead time and maximum dead time；By the absolute value of the output current
It is compared with the absolute value of the absolute value of the current upper limit value and the floor level of electric current, and will be actively according to comparison result
When dead time after switching tube shutdown is set as the postposition dead time, the minimum dead time or the maximum dead zone
Between.
Two level converter the dead time method of SiC MOSFET three-phases according to the ... of the embodiment of the present invention, by according to SiC
MOSFET and its parameter information of driving plate calculate preposition dead time and postposition dead time, before active switch pipe is opened
Dead time is set as N times of preposition dead time, and calculates minimum dead zone according to the current upper limit value of setting and floor level of electric current
Time and maximum dead time, then by the exhausted of the absolute value and floor level of electric current of the absolute value of output current and current upper limit value
Value is compared, and the dead time after being turned off active switch pipe according to comparison result is set as postposition dead time, most
Small dead time or maximum dead time can not only reduce diode losses, output capacitance loss and output voltage damage as a result,
It loses, and does not need additional hardware circuit, structure can be reduced and the complexity of logic is set, simple and convenient, cost is relatively low.
In addition, the two level converter the dead time method of SiC MOSFET three-phases proposed according to the above embodiment of the present invention
There can also be following additional technical characteristic：
According to one embodiment of present invention, according to the polarity of the output current determine the phase bridge arm switch on the bridge pipe and
The initiative of bridge switch pipe, specifically includes：If the polarity of the output current is just, based on the determination of switch on the bridge pipe
Dynamic switching tube, and bridge switch pipe is determined as complementary switch pipe；If the polarity of the output current is negative, lower bridge is opened
It closes pipe and is determined as active switch pipe, and switch on the bridge pipe is determined as complementary switch pipe.
Further, the SiC MOSFET and its parameter information of driving plate include the input electricity of the SiC MOSFET
Hold Ciss, threshold voltage Vth, busbar voltage VdcUnder output capacitance charge Qoss(Vdc), driving resistance Rg, driving voltage maximum value
VgsmaxAnd minimum value Vgsmin。
Further, the preposition dead time T is calculated according to following formulad,aheadWith the postposition dead time
Td,after：
Further, the minimum dead time T is calculated according to following formulaminWith the maximum dead time Tmax：
Wherein, ImaxFor the current upper limit value, with the minimum dead time TminFor N times of the preposition dead time
It is configured for foundation, IminFor the floor level of electric current, with the maximum dead time TmaxNo more than two level of the three-phase
It is that foundation is configured that converter, which works normally permitted maximum value,.
Further, when the dead time after being turned off active switch pipe according to comparison result is set as the postposition dead zone
Between, the minimum dead time or the maximum dead time, specifically include：If output current i meets | Imin|≤|i|≤|
Imax|, then the dead time after turning off active switch is set as Td,after；If output current i meets | i | ＞ | Imax|, then
Dead time after active switch is turned off is set as Tmin；If output current i meets | i | ＜ | Imin|, then by active switch
Dead time after shutdown is set as Tmax。
Description of the drawings
Fig. 1 is the structural schematic diagram according to two level converter of three-phase of one embodiment of the invention；
Fig. 2 is the flow according to the two level converter the dead time method of SiC MOSFET three-phases of the embodiment of the present invention
Figure；
Fig. 3 is the two level converter the dead time method of SiC MOSFET three-phases according to a specific embodiment of the invention
Flow chart；
Fig. 4 is the A phase detail views according to two level converter of three-phase of one embodiment of the invention；
Fig. 5 is the output voltage error schematic diagram according to certain phase bridge arm of one embodiment of the invention.
Specific implementation mode
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
The two level converter the dead time side of SiC MOSFET three-phases of the embodiment of the present invention described below in conjunction with the accompanying drawings
Method.
As shown in Figure 1, two level converter of three-phase of the embodiment of the present invention includes three-phase bridge arm, opened per the upper bridge of phase bridge arm
It is SiC MOSFET, i.e. M in Fig. 1 to close pipe and bridge switch pipe1H、M1L、M2H、M2L、M3H、M3LFor six SiC MOSFET,
D1H、D1L、D2H、D2L、D3H、D3LFor six antiparallel SiC SBD.Two level converter of three-phase of the embodiment of the present invention can be to straight
Galvanic electricity carries out inversion, to obtain three-phase electricity, and is supplied to threephase load.As shown in Figure 1, VdcFor DC bus-bar voltage, Cdc1、Cdc2
For dc-link capacitance, N is dc-link capacitance midpoint, and A, B, C are the midpoint of three-phase bridge arm, iA、iB、iCFor three-phase bridge arm
Output current, LA、LB、LCFor three-phase filter inductance, RA、RB、RCIt is loaded for three-phase resistance, O is load centre point.
In an embodiment of the present invention, identical the dead time method is used per phase bridge arm.
As shown in Fig. 2, the two level converter the dead time method of SiC MOSFET three-phases of the embodiment of the present invention, including with
Lower step：
S1 obtains the output current per phase bridge arm midpoint.
In an embodiment of the present invention, existing current sample list in two level converter of SiC MOSFET three-phases can be passed through
Output current of the member detection per phase bridge arm midpoint, that is, detect iA、iB、iC。
S2 judges the polarity of output current, and determines the phase bridge arm switch on the bridge pipe under according to the polarity of output current
The initiative of bridge switch pipe.
For any phase output current, its positive-negative polarity can be first judged, if the polarity of output current is just, by the phase
The switch on the bridge pipe of bridge arm is determined as active switch pipe, and bridge switch pipe is determined as complementary switch pipe；If output current
Polarity be negative, then the bridge switch pipe of the phase bridge arm is determined as active switch pipe, and switch on the bridge pipe is determined as complementation
Switching tube.
S3 obtains SiC MOSFET and its parameter information of driving plate, and calculates preposition dead time according to parameter information
With postposition dead time.
Wherein, SiC MOSFET and its parameter information of driving plate can be by obtaining in producer's offer and databook.At this
In one embodiment of invention, the parameter information of SiC MOSFET may include the input capacitance C of SiC MOSFETiss, threshold voltage
Vth, busbar voltage VdcUnder output capacitance charge Qoss(Vdc), driving resistance Rg, driving voltage maximum value VgsmaxAnd minimum value
Vgsmin。
Specifically, preposition dead time T can be calculated according to following formulad,aheadWith postposition dead time Td,after：
S4, the dead time before active switch pipe is opened are set as N times of preposition dead time, wherein 1.5<N<
2.5。
Wherein, N is Margin coefficient, i.e., the dead time before opening active switch pipe be set as (1.5~2.5) ×
Td,ahead。
S5 is arranged current upper limit value and floor level of electric current, and calculates minimum extremely according to current upper limit value and floor level of electric current
Area's time and maximum dead time.
In one embodiment of the invention, minimum dead time T can be calculated according to following formulaminWhen with maximum dead zone
Between Tmax：
Wherein, ImaxFor current upper limit value, with minimum dead time TminPreposition dead time for N times is that foundation is set
It sets, IminFor floor level of electric current, with maximum dead time TmaxIt is permitted most no more than two level converter of three-phase normal work
Big value is that foundation is configured.
S6 compares the absolute value of the absolute value and floor level of electric current of the absolute value of output current and current upper limit value
Compared with, and the dead time after the shutdown of active switch pipe is set as by postposition dead time, minimum dead time according to comparison result
Or maximum dead time.
Specifically, if output current i meets | Imin|≤|i|≤|Imax|, then when dead zone after turning off active switch
Between be set as Td,after；If output current i meets | i | ＞ | Imax|, then the dead time after turning off active switch is set as
Tmin；If output current i meets | i | ＜ | Imin|, then the dead time after turning off active switch is set as Tmax。
In a specific embodiment, as shown in figure 3, two level converter the dead time method of SiC MOSFET three-phases can
Include the following steps：
S101 measures the output current i of bridge arm.
S102 judges whether there is i ＞ 0.If so, thening follow the steps S103；If not, thening follow the steps S104.
S103, the SiC MOSFET above bridge arm are active switching tube.
S104, the SiC MOSFET below bridge arm are active switching tube.
S105 reads parameter from SiC MOSFET and its databook of driving plate.
S106 calculates Td,aheadAnd Td,after。
S107, the dead time before active switch pipe is opened are set as (1.5~2.5) × Td,ahead。
S108, according to safety and realizability setting electric current threshold value IminAnd Imax。
S109 calculates TminAnd Tmax。
S110, will | i | with | Imin|、|Imax| it is compared.If | Imin|≤|i|≤|Imax|, then follow the steps S111；
If | i | ＞ | Imax|, then follow the steps S112；If | i | ＜ | Imin|, then follow the steps S113.
S111, the dead time after active switch pipe is turned off are set as Td,after。
S112, the dead time after active switch is turned off are set as Tmin。
S113, the dead time after active switch is turned off are set as Tmax。
That is, the dead time that the active switch device of the embodiment of the present invention opens shutdown both sides is asymmetric, it is open-minded
Parameter in the databook for the SiC MOSFET and its driving plate that preceding dead time can be provided by producer determines, after shutdown
Dead time can be determined by the parameter in the databook of output current size, the SiC MOSFET that producer provides and its driving plate
It is fixed.
The setting up procedure in two level converter dead zone of SiC MOSFET three-phases is described in detail by taking A phases as an example below.
Fig. 4 shows the details of A phases, wherein Vg1H、Vg1LFor driving voltage, Rg1H、Rg1LTo drive resistance, Cgs1H、Cdg1H、
Cds1HThe respectively gate-source capacitance of upper switch pipe, miller capacitance, drain source capacitance, Cgs1L、Cdg1L、Cds1LRespectively lower switch pipe
Gate-source capacitance, miller capacitance, drain source capacitance.It is desirable：
Work as iAFor timing, M1HFor active switching tube.If the original state of circuit is M1LThe reversed afterflow of raceway groove, next work
State is M1LRaceway groove is closed, and M is worked as1LAfter raceway groove completely closes, M1HCan just it start open-minded.In M1LDriving voltage is begun to decline
M1HDriving voltage begin to ramp up between interval time just be active switching tube open before dead time.The purpose in this dead zone is
Prevent M1HWith M1LOccur straight-through.M1LThe time that needs are complete switched off from beginning to turn off raceway groove is driving voltage under maximum value
It the time for dropping to threshold voltage, is represented by：
Wherein, Vgs=Vgsmax-Vgsmin(VgsmaxFor driving voltage maximum value, VgsminFor driving voltage minimum value), Ciss=
Cgs+Cdg。
M1HThe time opened since being begun to ramp up to raceway groove driving voltage is that driving voltage rises to threshold from minimum value
It the time of voltage, is represented by：
Occur in order to prevent straight-through, the minimum value of dead time before active switch pipe is opened is：
The influence that the interference of the inaccuracy of parameter and circuit brings dead time in order to prevent, before active switch is opened
Dead zone should consider certain allowance, take 1.5~2.5 times of Td,aheadDead time before being opened as active switch pipe.
If the original state of circuit is M1HRaceway groove forward conduction, next working condition are M1HRaceway groove is closed, and M is worked as1HRaceway groove
After completely closing, M1LCan just it start open-minded.In M1HDriving voltage begins to decline M1LDriving voltage begin to ramp up between
Dead time after the time is just active switch OFF.M1HIt is driving that the required time is complete switched off from beginning to turn off raceway groove
Voltage drops to the time of threshold voltage from maximum value, so time and above-mentioned tfIt is identical.Work as M1HAfter raceway groove complete switches off, M1L's
Output capacitance (Cdg1L+Cds1L) middle in the presence of the charge Q not releasedoss(Vdc).If M at this time1LOpen-minded, the M of raceway groove horse back1L's
Output capacitance charge will be discharged by raceway groove, generate huge loss, DC power supply also can by the output capacitance of upper tube to
M1LRaceway groove discharges, and further increases loss.In order to eliminate this loss, need in M1LOutput capacitance charge pass through iAEnergy is complete
After portion feeds back to load, raceway groove can just be opened, and the time needed for energy feedback is：
M1LThe time opened since being begun to ramp up to raceway groove driving voltage is that driving voltage rises to threshold by minimum value
The time of voltage, so time and above-mentioned trIt is identical.So the dead time after the shutdown of active switch pipe is：
By the formula it is found that working as iAVery hour, Td,afterCan be very big, can be more than the maximum value of modulation limitation；Work as iAVery
When big, Td,afterCan be very small, straight-through risk may be brought.So two output current threshold values can be arranged：Imin、
Imax.When output current meets | Imin|≤|iA|≤|Imax|, the dead time after the shutdown of active switch pipe is set as Td,after；If
Output current meets | iA| ＞ | Imax|, the dead time after the shutdown of active switch pipe is set as Tmin；If output current meets | iA|
＜ | Imin|, the dead time after the shutdown of active switch pipe is set as Tmax。IminIt can be obtained by trial and error procedure, to ensure TmaxIt will not
It is realized subject to the maximum value allowed more than modulation；ImaxIt can ensure TminFor 1.5~2.5 times of Td,ahead。
Work as iAWhen polarity is negative, M1LFor active switching tube, the dead time method is same as described above.Above-mentioned setting method exists
The two each bridge arm of level converter of SiC MOSFET three-phases is required to execute one time.B phases, the dead time method of C phases and A phase phases
Together.
Using above-mentioned the dead time method, current polarity is timing, certain phase bridge arm output voltage error is as shown in Figure 5.
vgs,actFor the driving voltage of active switch, vgs,comFor the driving voltage of complementary switch, Δ v is output voltage error, from figure
As can be seen that the output voltage error that brings of dead zone after the shutdown of active switch pipe can compensate it is dead before active switch pipe is opened
The part output voltage error that zone is come.When current polarity is negative, the output that the dead zone after the shutdown of active switch pipe is brought is electric
The part output voltage error that the dead zone before active switch pipe is opened is brought can equally be compensated by holding up difference.Therefore, the present invention is real
The method for applying example can reduce output voltage loss.
In conclusion two level converter the dead time method of SiC MOSFET three-phases according to the ... of the embodiment of the present invention, leads to
It crosses and preposition dead time and postposition dead time is calculated according to SiC MOSFET and its parameter information of driving plate, by active switch
Dead time before pipe is opened is set as N times of preposition dead time, and according to the current upper limit value of setting and floor level of electric current meter
Minimum dead time and maximum dead time are calculated, then by the absolute value and electric current of the absolute value of output current and current upper limit value
The absolute value of lower limiting value is compared, and to be set as postposition dead for the dead time after being turned off active switch pipe according to comparison result
Area's time, minimum dead time or maximum dead time, can not only reduce as a result, diode losses, output capacitance loss and
Output voltage loses, and does not need additional hardware circuit, can reduce structure and the complexity of logic is arranged, simple side
Just, cost is relatively low.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on ... shown in the drawings or
Position relationship is merely for convenience of description of the present invention and simplification of the description, and does not indicate or imply the indicated device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；Can be that machinery connects
It connects, can also be electrical connection；It can be directly connected, can also can be indirectly connected through an intermediary in two elements
The interaction relationship of the connection in portion or two elements.It for the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
In the present invention unless specifically defined or limited otherwise, fisrt feature can be with "above" or "below" second feature
It is that the first and second features are in direct contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be
One feature is directly under or diagonally below the second feature, or is merely representative of fisrt feature level height and is less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiments or example.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (6)
1. a kind of two level converter the dead time method of SiC MOSFET three-phases, which is characterized in that two level of the three-phase becomes
Parallel operation includes three-phase bridge arm, and the switch on the bridge pipe and bridge switch pipe per phase bridge arm are SiC MOSFET, are used per phase bridge arm
Identical the dead time method, the dead time method include the following steps：
Obtain the output current per phase bridge arm midpoint；
Judge the polarity of the output current, and determines the phase bridge arm switch on the bridge pipe under according to the polarity of the output current
The initiative of bridge switch pipe；
The SiC MOSFET and its parameter information of driving plate are obtained, and preposition dead time is calculated according to the parameter information
With postposition dead time；
Dead time before active switch pipe is opened is set as N times of the preposition dead time, wherein 1.5<N<2.5；
Current upper limit value and floor level of electric current are set, and minimum is calculated extremely according to the current upper limit value and the floor level of electric current
Area's time and maximum dead time；
By the absolute value of the absolute value of the absolute value of the output current and the current upper limit value and the floor level of electric current into
Row compares, and the dead time after being turned off active switch pipe according to comparison result is set as the postposition dead time, described
Minimum dead time or the maximum dead time.
2. two level converter the dead time method of SiC MOSFET three-phases according to claim 1, which is characterized in that root
The initiative that phase the bridge arm switch on the bridge pipe and bridge switch pipe are determined according to the polarity of the output current, specifically includes：
If the polarity of the output current is just, switch on the bridge pipe is determined as active switch pipe, and by bridge switch pipe
It is determined as complementary switch pipe；
If the polarity of the output current is negative, bridge switch pipe is determined as active switch pipe, and by switch on the bridge pipe
It is determined as complementary switch pipe.
3. two level converter the dead time method of SiC MOSFET three-phases according to claim 2, which is characterized in that institute
The parameter information for stating SiC MOSFET and its driving plate includes the input capacitance C of the SiC MOSFETiss, threshold voltage Vth, it is female
Line voltage VdcUnder output capacitance charge Qoss(Vdc), driving resistance Rg, driving voltage maximum value VgsmaxAnd minimum value Vgsmin。
4. two level converter the dead time method of SiC MOSFET three-phases according to claim 3, which is characterized in that root
The preposition dead time T is calculated according to following formulad,aheadWith the postposition dead time Td,after：
5. two level converter the dead time method of SiC MOSFET three-phases according to claim 4, which is characterized in that root
The minimum dead time T is calculated according to following formulaminWith the maximum dead time Tmax：
Wherein, ImaxFor the current upper limit value, with the minimum dead time TminFor N times of the preposition dead time be according to
According to being configured, IminFor the floor level of electric current, with the maximum dead time TmaxNo more than two level translation of the three-phase
It is that foundation is configured that device, which works normally permitted maximum value,.
6. two level converter the dead time method of SiC MOSFET three-phases according to claim 5, which is characterized in that root
Dead time after turning off active switch pipe according to comparison result is set as the postposition dead time, the minimum dead time
Or the maximum dead time, it specifically includes：
If output current i meets | Imin|≤|i|≤|Imax|, then the dead time after turning off active switch is set as
Td,after；
If output current i meets | i | ＞ | Imax|, then the dead time after turning off active switch is set as Tmin；
If output current i meets | i | ＜ | Imin|, then the dead time after turning off active switch is set as Tmax。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810549178.XA CN108649785B (en) | 2018-05-31 | 2018-05-31 | Dead zone setting method for SiC MOSFET three-phase two-level converter |
Applications Claiming Priority (1)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109494972A (en) * | 2018-11-07 | 2019-03-19 | 南京邮电大学 | Dead band time setting method based on enhancement type gallium nitride device |
| CN110855138A (en) * | 2019-10-25 | 2020-02-28 | 西安班特利奥能源科技有限公司 | Dead zone compensation method for three-level converter |
| CN111211770A (en) * | 2020-02-17 | 2020-05-29 | 南京工程学院 | Voltage-variable SiC MOSFET active driving circuit |
| CN111313677A (en) * | 2020-04-01 | 2020-06-19 | 南通大学 | Method for setting dead zone of synchronous working type SiC MOSFET Boost DC-DC converter |
| CN111697862A (en) * | 2020-06-27 | 2020-09-22 | 南通大学 | Three-phase bridge type low-parasitic oscillation two-level SiC MOSFET circuit topological structure |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494972A (en) * | 2018-11-07 | 2019-03-19 | 南京邮电大学 | Dead band time setting method based on enhancement type gallium nitride device |
| CN109494972B (en) * | 2018-11-07 | 2020-12-04 | 南京邮电大学 | Dead time setting method based on enhanced gallium nitride device |
| CN110855138A (en) * | 2019-10-25 | 2020-02-28 | 西安班特利奥能源科技有限公司 | Dead zone compensation method for three-level converter |
| CN110855138B (en) * | 2019-10-25 | 2021-08-03 | 西安班特利奥能源科技有限公司 | Dead zone compensation method for three-level converter |
| CN111211770A (en) * | 2020-02-17 | 2020-05-29 | 南京工程学院 | Voltage-variable SiC MOSFET active driving circuit |
| CN111313677A (en) * | 2020-04-01 | 2020-06-19 | 南通大学 | Method for setting dead zone of synchronous working type SiC MOSFET Boost DC-DC converter |
| CN111313677B (en) * | 2020-04-01 | 2021-08-27 | 南通大学 | Method for setting dead zone of synchronous working type SiC MOSFET Boost DC-DC converter |
| CN111697862A (en) * | 2020-06-27 | 2020-09-22 | 南通大学 | Three-phase bridge type low-parasitic oscillation two-level SiC MOSFET circuit topological structure |
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