CN108649785B - Dead zone setting method for SiC MOSFET three-phase two-level converter - Google Patents

Dead zone setting method for SiC MOSFET three-phase two-level converter Download PDF

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CN108649785B
CN108649785B CN201810549178.XA CN201810549178A CN108649785B CN 108649785 B CN108649785 B CN 108649785B CN 201810549178 A CN201810549178 A CN 201810549178A CN 108649785 B CN108649785 B CN 108649785B
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dead time
switching tube
current
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output current
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CN108649785A (en
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原熙博
张雷
张嘉航
伍小杰
石聪聪
张永磊
魏琛
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China University of Mining and Technology CUMT
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/38—Means for preventing simultaneous conduction of switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/38—Means for preventing simultaneous conduction of switches
    • H02M1/385—Means for preventing simultaneous conduction of switches with means for correcting output voltage deviations introduced by the dead time

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  • Dc-Dc Converters (AREA)

Abstract

The invention discloses a method for setting a dead zone of a SiC MOSFET three-phase two-level converter, which comprises the following steps: acquiring the output current of the midpoint of each phase of bridge arm; judging the polarity of the output current, and determining the initiative of the upper bridge switching tube and the lower bridge switching tube of the phase bridge arm according to the polarity of the output current; acquiring parameter information of the SiC MOSFET and a drive board thereof, and calculating the pre-dead time and the post-dead time according to the parameter information; setting the dead time before the active switching tube is switched on to be N times of the preposed dead time, wherein N is more than 1.5 and less than 2.5; setting a current upper limit value and a current lower limit value, and calculating the minimum dead time and the maximum dead time according to the current upper limit value and the current lower limit value; and comparing the absolute value of the output current with the absolute value of the upper limit value of the current and the absolute value of the lower limit value of the current, and setting the dead time after the active switching tube is switched off as the post dead time, the minimum dead time or the maximum dead time according to the comparison result.

Description

Dead zone setting method for SiC MOSFET three-phase two-level converter
Technical Field
The invention relates to the technical field of converters, in particular to a dead zone setting method of a SiC MOSFET three-phase two-level converter.
Background
With the emergence of wide bandgap Semiconductor devices such as SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect transistors), power electronic devices can have more advantages: higher operating voltage, greater power, smaller volume, greater power density, higher switching frequency, lower losses, higher operating temperature, etc. Due to the advantages, the SiC MOSFET power electronic equipment is more suitable for the middle and low voltage application fields of electric locomotives, electric airplanes, new energy power generation, micro-grids and the like. Among them, the SiC MOSFET three-phase two-level converter is currently the most promising one due to its simple topology and control strategy. However, although the SiC MOSFET has many advantages in the three-phase two-level converter, it has a problem in setting a dead zone.
Although the traditional fixed dead zone setting scheme can still ensure the reliability of the SiC MOSFET three-phase two-level converter, the traditional fixed dead zone setting scheme can bring larger loss and output voltage loss. The dead zone setting scheme applied to the SiC MOSFET converter at present mainly has two types: the first is a setting scheme for reducing the dead zone as much as possible by fully utilizing the advantage that the channel resistance of the SiC MOSFET is smaller than the resistance of the diode, and although the scheme can reduce the freewheeling loss of the diode, the scheme can bring larger output capacitance loss of the SiC MOSFET and reduce the reliability of the system; the second scheme reduces the diode freewheeling loss and the SiC MOSFET output capacitance loss at the same time, but requires an additional dead-time selection circuit, increasing the cost and complexity of the system.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the art described above. Therefore, the invention aims to provide a method for setting the dead zone of the SiC MOSFET three-phase two-level converter, which can reduce the loss of a diode, the loss of an output capacitor and the loss of an output voltage, can reduce the complexity of a structure and a setting logic, and is simple and convenient and low in cost.
In order to achieve the purpose, the invention provides a dead zone setting method for a SiC MOSFET three-phase two-level converter, wherein the three-phase two-level converter comprises three-phase bridge arms, an upper bridge switching tube and a lower bridge switching tube of each phase of bridge arm are both SiCSMOSFETs, each phase of bridge arm adopts the same dead zone setting method, and the dead zone setting method comprises the following steps: acquiring the output current of the midpoint of each phase of bridge arm; judging the polarity of the output current, and determining the initiative of the upper bridge switching tube and the lower bridge switching tube of the phase bridge arm according to the polarity of the output current; acquiring parameter information of the SiC MOSFET and a drive plate thereof, and calculating a pre-dead time and a post-dead time according to the parameter information; setting the dead time before the active switching tube is switched on to be N times of the preposed dead time, wherein N is more than 1.5 and less than 2.5; setting a current upper limit value and a current lower limit value, and calculating the minimum dead time and the maximum dead time according to the current upper limit value and the current lower limit value; and comparing the absolute value of the output current with the absolute value of the upper current limit value and the absolute value of the lower current limit value, and setting the dead time after the active switching tube is switched off as the post dead time, the minimum dead time or the maximum dead time according to the comparison result.
According to the dead zone setting method of the SiC MOSFET three-phase two-level converter, the pre dead zone time and the post dead zone time are calculated according to the parameter information of the SiC MOSFET and the driving plate thereof, the dead zone time before the active switching tube is switched on is set to be N times of the pre dead zone time, the minimum dead zone time and the maximum dead zone time are calculated according to the set current upper limit value and the set current lower limit value, then the absolute value of the output current is compared with the absolute value of the current upper limit value and the absolute value of the current lower limit value, and the dead zone time after the active switching tube is switched off is set to be the post dead zone time, the minimum dead zone time or the maximum dead zone time according to the comparison result, so that the loss of a diode, the loss of an output capacitor and the loss of an output voltage can be reduced, no extra hardware circuit is needed, and the complexity of a structure, simple and convenient, and low cost.
In addition, the dead zone setting method of the SiC MOSFET three-phase two-level converter proposed according to the above embodiment of the present invention may also have the following additional technical features:
according to an embodiment of the present invention, determining the initiative of the upper bridge switching tube and the lower bridge switching tube of the phase bridge arm according to the polarity of the output current specifically includes: if the polarity of the output current is positive, determining the upper bridge switching tube as an active switching tube and determining the lower bridge switching tube as a complementary switching tube; and if the polarity of the output current is negative, determining the lower bridge switching tube as an active switching tube and determining the upper bridge switching tube as a complementary switching tube.
Further, the parameter information of the SiC MOSFET and the drive board thereof comprises an input capacitance C of the SiC MOSFETissThreshold voltage VthBus voltage VdcLower output capacitance charge Qoss(Vdc) And a driving resistor RgMaximum value of driving voltage VgsmaxAnd minimum value Vgsmin。
Further, the pre dead time T is calculated according to the following formulad,aheadAnd said post dead time Td,after：
Figure BDA0001679992520000031
Further, the minimum dead time T is calculated according to the following formulaminAnd said maximum dead time Tmax：
Figure BDA0001679992520000041
Figure BDA0001679992520000042
Wherein, ImaxFor the current upper limit value, with the minimum dead time TminN times the pre-dead time is set according tominThe maximum dead time T is the current lower limit valuemaxThe maximum value which is not larger than the allowed maximum value of the normal work of the three-phase two-level converter is set according to the standard.
Further, the dead time after the active switching tube is turned off is set as the post dead time, the minimum dead time or the maximum dead time according to the comparison result, which specifically includes: if the output current I satisfies | Imin|≤|i|≤|ImaxIf the dead time after the active switch is turned off is set to Td,after(ii) a If the output current I satisfies | I | > | ImaxIf the dead time after the active switch is turned off is set to Tmin(ii) a If the output current I satisfies | I | < | IminIf the active switch is turned off, the dead timeIs set to Tmax。
Drawings
Fig. 1 is a schematic diagram of a three-phase two-level converter according to an embodiment of the present invention;
FIG. 2 is a flow chart of a dead zone setting method of a SiC MOSFET three-phase two-level converter according to an embodiment of the invention;
FIG. 3 is a flow chart of a method for setting a dead zone of a SiC MOSFET three-phase two-level converter according to an embodiment of the present invention;
FIG. 4 is a detail view of phase A of a three-phase two-level converter according to one embodiment of the present invention;
fig. 5 is a schematic diagram of an output voltage error of a phase leg according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The dead zone setting method of the SiC MOSFET three-phase two-level converter according to the embodiment of the present invention is described below with reference to the drawings.
As shown in fig. 1, the three-phase two-level converter according to the embodiment of the present invention includes three-phase bridge arms, and the upper bridge switching transistor and the lower bridge switching transistor of each phase bridge arm are SiC MOSFETs, that is, M in fig. 11H、M1L、M2H、M2L、M3H、M3LSix SiC MOSFETs, D1H、D1L、D2H、D2L、D3H、D3LSix anti-parallel SiC SBDs. The three-phase two-level converter provided by the embodiment of the invention can be used for inverting the direct current to obtain three-phase power and providing the three-phase power for a three-phase load. As shown in FIG. 1, VdcIs a DC bus voltage, Cdc1、Cdc2Is a DC bus capacitor, N is the midpoint of the DC bus capacitor, A, B, C is the midpoint of the three-phase bridge arm, iA、iB、iCIs the output current of a three-phase bridge arm, LA、LB、LCIs a three-phase filter inductor, RA、RB、RCThe load is a three-phase resistor load, and O is a load central point.
In the embodiment of the invention, each phase bridge arm adopts the same dead zone setting method.
As shown in fig. 2, the method for setting the dead zone of the SiC MOSFET three-phase two-level converter according to the embodiment of the present invention includes the following steps:
and S1, acquiring the output current of the middle point of each phase bridge arm.
In the embodiment of the invention, the output current of the midpoint of each phase bridge arm can be detected through the existing current sampling unit in the SiC MOSFET three-phase two-level converter, namely iA、iB、iC。
And S2, judging the polarity of the output current, and determining the initiative of the upper bridge switching tube and the lower bridge switching tube of the phase bridge arm according to the polarity of the output current.
For any phase output current, the positive and negative polarities of the output current can be judged firstly, if the polarity of the output current is positive, the upper bridge switching tube of the phase bridge arm is determined as an active switching tube, and the lower bridge switching tube is determined as a complementary switching tube; and if the polarity of the output current is negative, determining the lower bridge switching tube of the phase bridge arm as an active switching tube, and determining the upper bridge switching tube as a complementary switching tube.
And S3, acquiring parameter information of the SiC MOSFET and the drive plate thereof, and calculating the pre dead time and the post dead time according to the parameter information.
The parameter information of the SiC MOSFET and the drive board thereof can be obtained from a manufacturer and a data manual. In one embodiment of the invention, the parameter information of the SiC MOSFET can include an input capacitance C of the SiC MOSFETissThreshold voltage VthBus voltage VdcLower output capacitance charge Qoss(Vdc) And a driving resistor RgMaximum value of driving voltage VgsmaxAnd minimum value Vgsmin。
In particular, it can be calculated according to the following formulaCalculating the pre-dead time Td,aheadAnd post dead time Td,after：
Figure BDA0001679992520000061
Figure BDA0001679992520000062
And S4, setting the dead time before the active switch tube is switched on to be N times of the preposed dead time, wherein N is more than 1.5 and less than 2.5.
Wherein, N is a margin coefficient, namely the dead time before the active switch tube is switched on is set to be (1.5-2.5) multiplied by Td,ahead。
And S5, setting a current upper limit value and a current lower limit value, and calculating the minimum dead time and the maximum dead time according to the current upper limit value and the current lower limit value.
In one embodiment of the invention, the minimum dead time T may be calculated according to the following formulaminAnd a maximum dead time Tmax：
Figure BDA0001679992520000072
Wherein, ImaxAs the upper limit value of current, with a minimum dead time TminSetting a leading dead time of N times as a basis, IminAs a lower current limit value, with a maximum dead time TmaxThe maximum value which is not larger than the allowed maximum value of the normal work of the three-phase two-level converter is set according to the standard.
And S6, comparing the absolute value of the output current with the absolute value of the upper limit value of the current and the absolute value of the lower limit value of the current, and setting the dead time after the active switching tube is switched off as a post dead time, a minimum dead time or a maximum dead time according to the comparison result.
In particular toGround, if the output current I satisfies | Imin|≤|i|≤|ImaxIf the dead time after the active switch is turned off is set to Td,after(ii) a If the output current I satisfies | I | > | ImaxIf the dead time after the active switch is turned off is set to Tmin(ii) a If the output current I satisfies | I | < | IminIf the dead time after the active switch is turned off is set to Tmax。
In one embodiment, as shown in fig. 3, the method for setting the dead zone of the SiC MOSFET three-phase two-level converter may include the following steps:
and S101, measuring the output current i of the bridge arm.
S102, judging whether i is larger than 0. If yes, executing step S103; if not, step S104 is executed.
And S103, taking the SiC MOSFET above the bridge arm as an active switching tube.
And S104, taking the SiC MOSFET below the bridge arm as an active switching tube.
S105, reading parameters from the data book of SiC MOSFETs and their driving boards.
S106, calculating Td,aheadAnd Td,after。
S107, setting the dead time before the active switch tube is switched on to be (1.5-2.5) multiplied by Td,ahead。
S108, setting a current threshold value I according to safety and realizabilityminAnd Imax。
S109, calculating TminAnd Tmax。
S110, the | I | and | I |, are processedmin|、|ImaxCompare | is performed. If Imin|≤|i|≤|ImaxIf yes, executing step S111; if | I | > | ImaxIf yes, go to step S112; if | I | < | IminIf yes, step S113 is performed.
S111, setting the dead time after the active switch tube is turned off as Td,after。
S112, setting the dead time after the active switch is turned off as Tmin。
S113, the active switch is closed and then is deadZone time is set to Tmax。
That is to say, the dead time of the active switching device according to the embodiment of the present invention is asymmetric between the on and off sides, the dead time before the on operation can be determined by parameters in a data manual of the SiC MOSFET and the driver board thereof provided by the manufacturer, and the dead time after the off operation can be determined by the output current and parameters in a data manual of the SiC MOSFET and the driver board thereof provided by the manufacturer.
The following describes the setting process of the dead zone of the SiC MOSFET three-phase two-level converter in detail by taking the a phase as an example.
FIG. 4 shows a detail of phase A, wherein Vg1H、Vg1LFor the driving voltage, Rg1H、Rg1LTo drive a resistor, Cgs1H、Cdg1H、Cds1HRespectively a gate-source capacitor, a Miller capacitor, a drain-source capacitor, C of the upper switch tubegs1L、Cdg1L、Cds1LRespectively a grid source capacitor, a Miller capacitor and a drain-source capacitor of the lower switch tube. The following steps can be taken:
Figure BDA0001679992520000081
when i isAIs positive, M1HIs an active switch tube. If the initial state of the circuit is M1LChannel backward follow current, and the next working state is M1LChannel is closed when M1LAfter the trench is completely closed, M1HCan the switch-on be started. At M1LThe driving voltage begins to drop to M1HThe interval time between the start of the rise of the driving voltage is the dead time before the active switch tube is switched on. The purpose of this dead zone is to prevent M1HAnd M1LShoot-through occurs. M1LThe time required from the start of turn-off to the complete turn-off of the channel is the time for the driving voltage to drop from the maximum value to the threshold voltage, which can be expressed as:
wherein, Vgs＝Vgsmax-Vgsmin(VgsmaxTo the maximum value of the driving voltage, VgsminMinimum value of driving voltage), Ciss＝Cgs+Cdg。
M1HThe time from the start of the driving voltage rising to the start of the channel opening is the time from the minimum value of the driving voltage rising to the threshold voltage, and can be expressed as:
in order to prevent the occurrence of direct connection, the minimum value of the dead time before the active switching tube is switched on is as follows:
Figure BDA0001679992520000093
in order to prevent the influence of inaccurate parameters and circuit interference on dead time, a certain margin is considered in the dead time before the active switch is switched on, and T is 1.5-2.5 timesd,aheadThe dead time before the active switching tube is switched on is used.
If the initial state of the circuit is M1HThe channel is conducted in the forward direction, and the next working state is M1HChannel is closed when M1HAfter the trench is completely closed, M1LCan the switch-on be started. At M1HThe driving voltage begins to drop to M1LThe interval time between the start of the rise of the driving voltage is the dead time after the active switch is turned off. M1HThe time required from the start of turn-off to the complete turn-off of the channel is the time for the driving voltage to drop from the maximum value to the threshold voltage, so the time is equal to tfThe same is true. When M is1HAfter the channel is completely closed, M1LOutput capacitance (C)dg1L+Cds1L) In the presence of an unreleased charge Qoss(Vdc). If at this time M1LChannel is immediately on, M1LThe output capacitor charge will be released through the channel, generating huge loss, the dc power supply will also pass through the output capacitor of the upper tube towards M1LThe channel discharges further increasing the losses. To eliminate this loss, it is necessary to eliminate the loss at M1LIs transported byOut of the capacitor charge pass iAAfter all energy is fed back to the load, the channel can be switched on, and the time required by energy feedback is as follows:
Figure BDA0001679992520000101
M1Lthe time from the start of the rise of the driving voltage to the start of the channel opening is the time from the minimum value of the driving voltage to the threshold voltage, so the time is equal to the time trThe same is true. Therefore, the dead time after the active switching tube is turned off is as follows:
Figure BDA0001679992520000102
according to the formula, when iAVery small, Td,afterWill be very large and will exceed the maximum value of the modulation limit; when i isAVery large time, Td,afterIt is very small and may carry the risk of straight-through. Two output current thresholds can be set: i ismin、Imax. When the output current satisfies | Imin|≤|iA|≤|ImaxSetting the dead time after the active switch tube is turned off as Td,after(ii) a If the output current satisfies | iA|＞|ImaxSetting the dead time after the active switch tube is turned off as Tmin(ii) a If the output current satisfies | iA|＜|IminSetting the dead time after the active switch tube is turned off as Tmax。IminCan be obtained by trial and error to ensure TmaxThe maximum value allowed by modulation realization is not larger than the standard value; i ismaxCan ensure Tmin1.5 to 2.5 times of Td,ahead。
When i isAWhen the polarity is negative, M1LFor active switching of the tube, the dead zone setting method is the same as described above. The setting method needs to be executed once on each bridge arm of the SiC MOSFET three-phase two-level converter. The dead zone setting method for the phase B and the phase C is the same as that for the phase A.
By adopting the dead zone setting method, the current polarity is positive, and a certain phase bridge arm outputs electricityThe compression error is shown in figure 5. v. ofgs,actIs the drive voltage of the active switch, vgs,comIn order to complement the driving voltage of the switch, Δ v is an output voltage error, and it can be seen from the figure that the output voltage error caused by the dead zone after the active switching tube is turned off can compensate part of the output voltage error caused by the dead zone before the active switching tube is turned on. When the current polarity is negative, the output voltage error caused by the dead zone after the active switching tube is switched off can also compensate part of the output voltage error caused by the dead zone before the active switching tube is switched on. Therefore, the method of the embodiment of the invention can reduce the loss of the output voltage.
In summary, according to the SiC MOSFET three-phase two-level converter dead zone setting method of the embodiment of the present invention, the pre dead zone time and the post dead zone time are calculated according to the parameter information of the SiC MOSFET and the driving board thereof, the dead zone time before the active switching tube is turned on is set to be N times of the pre dead zone time, the minimum dead zone time and the maximum dead zone time are calculated according to the set current upper limit value and the set current lower limit value, then the absolute value of the output current is compared with the absolute value of the current upper limit value and the absolute value of the current lower limit value, and the dead zone time after the active switching tube is turned off is set to be the post dead zone time, the minimum dead zone time or the maximum dead zone time according to the comparison result, so that not only the diode loss, the output capacitance loss and the output voltage loss can be reduced, but also an additional hardware circuit is not required, and the, simple and convenient, and low cost.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (1)

1. A method for setting dead zones of a SiC MOSFET three-phase two-level converter is characterized in that the three-phase two-level converter comprises three-phase bridge arms, an upper bridge switching tube and a lower bridge switching tube of each phase of bridge arm are both SiC MOSFETs, each phase of bridge arm adopts the same dead zone setting method, and the dead zone setting method comprises the following steps:
acquiring the output current of the midpoint of each phase of bridge arm;
judging the polarity of the output current, and determining the initiative of the upper bridge switching tube and the lower bridge switching tube of the phase bridge arm according to the polarity of the output current;
acquiring parameter information of the SiC MOSFET and a drive plate thereof, and calculating a pre-dead time and a post-dead time according to the parameter information;
setting the dead time before the active switching tube is switched on to be N times of the preposed dead time, wherein N is more than 1.5 and less than 2.5;
setting a current upper limit value and a current lower limit value, and calculating the minimum dead time and the maximum dead time according to the current upper limit value and the current lower limit value;
comparing the absolute value of the output current with the absolute value of the upper current limit value and the absolute value of the lower current limit value, and setting the dead time after the active switching tube is switched off as the post dead time, the minimum dead time or the maximum dead time according to the comparison result,
the method for determining the initiative of the upper bridge switching tube and the lower bridge switching tube of the phase bridge arm according to the polarity of the output current specifically comprises the following steps:
if the polarity of the output current is positive, determining the upper bridge switching tube as an active switching tube and determining the lower bridge switching tube as a complementary switching tube;
if the polarity of the output current is negative, determining the lower bridge switch tube as an active switch tube and the upper bridge switch tube as a complementary switch tube,
the parameter information of the SiC MOSFET and the drive board thereof comprises an input capacitance C of the SiC MOSFETissThreshold voltage VthBus voltage VdcLower output capacitance charge Qoss(Vdc) And a driving resistor RgMaximum value of driving voltage VgsmaxAnd minimum value Vgsmin，
Calculating the pre-dead time T according to the following formulad,aheadAnd said post dead time Td,after：
Figure FDA0002171375670000022
Wherein i is the output current,
calculating the minimum dead time T according to the following formulaminAnd said maximum dead time Tmax：
Figure FDA0002171375670000024
Wherein, ImaxFor the current upper limit value, with the minimum dead time TminN times the pre-dead time is set according tominThe maximum dead time T is the current lower limit valuemaxNot more than the maximum value allowed by the normal operation of the three-phase two-level converter is set according to the maximum value,
setting the dead time after the active switching tube is turned off as the post dead time, the minimum dead time or the maximum dead time according to the comparison result, specifically comprising:
if the output current I satisfies | Imin|≤|i|≤|ImaxIf the dead time after the active switch is turned off is set to Td,after；
If the output current I satisfies | I | > | ImaxIf the dead time after the active switch is turned off is set to Tmin；
If the output current I satisfies | I | < | IminIf the dead time after the active switch is turned off is set to Tmax。
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