CN111211770A - Voltage-variable SiC MOSFET active driving circuit - Google Patents
Voltage-variable SiC MOSFET active driving circuit Download PDFInfo
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- CN111211770A CN111211770A CN202010097060.5A CN202010097060A CN111211770A CN 111211770 A CN111211770 A CN 111211770A CN 202010097060 A CN202010097060 A CN 202010097060A CN 111211770 A CN111211770 A CN 111211770A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
- H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00307—Modifications for increasing the reliability for protection in bipolar transistor circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a voltage-variable SiC MOSFET active drive circuit, which comprises: the driving circuit, the voltage sampling circuit, the pulse generating circuit and the source voltage circuit; the voltage sampling circuit is used for collecting voltage signals at two ends of a grid source electrode in the switching process of the SiC MOSFET and transmitting the voltage signals to the pulse generating circuit; the pulse generating circuit is used for generating a pulse signal according to the received voltage signal and transmitting the pulse signal to the source voltage circuit; and the source voltage circuit is used for outputting a driving voltage control signal to the SiC MOSFET according to the pulse signal. The advantages are that: the invention can inhibit the current change rate in the switching process of the SiCMOS MOSFET by changing the drive voltage of the SiC MOSFET and inhibit the phenomena of current, voltage overshoot and oscillation in the switching process of the device under the condition of sacrificing small switching loss.
Description
Technical Field
The invention relates to a variable voltage SiC MOSFET active driving circuit, and belongs to the technical field of power electronics.
Background
Compared with a silicon metal oxide semiconductor field effect transistor (Si MOSFET), a silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) has a higher operating temperature, a higher thermal conductivity, and a lower switching loss, and is thus being widely used in the fields of vehicle chargers, motors, photovoltaic inverters, and the like, but an excessively high switching speed may cause current, voltage overshoot, and oscillation in the switching process of a device, and even increase the switching loss of the device.
There are several approaches to solving this problem. On one hand, the SiC MOSFET can be driven through the resonant driving circuit, the switching loss of the device can be effectively reduced, but the problems of current, voltage overshoot and oscillation in the switching process of the device cannot be solved. On the other hand, by increasing the resistance value of the device driving circuit resistor, the problems of current, voltage overshoot and oscillation in the switching process of the device can be reduced, but the switching loss of the device can be increased.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a voltage-variable SiC MOSFET active driving circuit which can inhibit the phenomena of current, voltage overshoot and oscillation in the switching process of a device under the condition of sacrificing small switching loss.
In order to solve the above technical problem, the present invention provides a variable voltage SiC MOSFET active driving circuit, comprising: the driving circuit, the voltage sampling circuit, the pulse generating circuit and the source voltage circuit;
the voltage sampling circuit is used for collecting voltage signals at two ends of a grid source electrode of a device in the switching process of the SiC MOSFET and transmitting the voltage signals to the pulse generating circuit;
the pulse generating circuit is used for generating a pulse signal according to the received voltage signal and transmitting the pulse signal to the source voltage circuit;
the source voltage circuit is used for outputting a driving voltage control signal to the SiC MOSFET according to the pulse signal;
the driving circuit is used for generating a gate driving voltage required by the SiC MOSFET switch.
Further, the driving circuit includes a first switch tube Q1, a second switch tube Q2, a first resistor R1 and a first node, wherein a collector of the first switch tube Q1 is connected to Vcc1 power supply voltage, an emitter of the first switch tube Q1 is connected to the first node, a base of the first switch tube Q1 is connected to a base of the second switch tube Q2, an emitter of the second switch tube Q2 is connected to the first node, a collector of the second switch tube Q2 is connected to Vee1 power supply voltage, one end of the first resistor R1 is connected to the first node, the other end of the first resistor R1 is connected to a gate of the SiC MOSFET, and Vcc1 and Vee1 respectively represent a gate turn-on voltage and a turn-off voltage of the SiC MOSFET.
Further, the voltage sampling circuit comprises a second resistor R2, a third resistor R3, a first capacitor C1 and a second node, wherein one end of the second resistor R2 is connected to the first node, the other end of the second resistor R2 is connected to the second node, one end of the third resistor R3 is connected to the second node, the other end of the third resistor R3 is grounded, one end of the first capacitor C1 is connected to the second node, and the other end of the first capacitor C1 is grounded.
Further, the pulse generating circuit comprises a first voltage comparator COM1, a second voltage comparator COM2 and a first Logic gate Logic, wherein a positive input terminal of the first voltage comparator COM1 is connected to the second node, a negative input terminal of the first voltage comparator COM1 is connected to a first reference voltage Vref1, a negative input terminal of the second voltage comparator COM2 is connected to the second node, a positive input terminal of the second voltage comparator COM2 is connected to a second reference voltage Vref2, an input terminal of the first Logic gate Logic is connected to an output terminal of the first voltage comparator COM1, another output terminal of the first Logic gate Logic is connected to an output terminal of the second voltage comparator COM2, and an output terminal of the first Logic gate Logic is connected to the source voltage circuit.
Further, the first reference voltage Vref1 and the second reference voltage Vref2 are reference voltages of the comparator, and the values thereof are set as required.
Further, the source voltage circuit comprises a third switching tube Q3, a fourth switching tube Q4 and a third node, wherein the collector of the third switching tube Q3 is connected with a Vcc2 power supply voltage, the base of the third switching tube Q3 is connected with the third node, the emitter of the third switching tube Q3 is connected with the source of the SiC MOSFET, the emitter of the fourth switching tube Q4 is connected with the source of the SiC MOSFET, the base of the fourth switching tube Q4 is connected with the third node, the collector of the fourth switching tube Q4 is connected with the Vee2 power supply voltage, and the third node is further connected with the Logic gate Logic output terminal; vcc2 and Vee2 are the source voltages of SiC MOSFETs.
The invention achieves the following beneficial effects:
according to the invention, the voltage at two ends of the gate source electrode in the switching process of the SiC MOSFET is detected by the voltage sampling circuit, so that the pulse generating circuit generates a pulse signal in a specific time stage of the switching process of the SiC MOSFET and controls the on-off of the switching tube in the source electrode voltage circuit, thereby changing the driving voltage of the SiC MOSFET, inhibiting the current change rate in the switching process of the SiCMOSFET, and inhibiting the phenomena of current, voltage overshoot and oscillation in the switching process of a device under the condition of sacrificing small switching loss.
Drawings
FIG. 1 is a schematic diagram of a circuit module according to the present invention;
FIG. 2 is a schematic diagram of a variable voltage SiC MOSFET active drive circuit according to one embodiment of the present invention;
FIG. 3 is a schematic diagram of a test circuit for a variable voltage SiC MOSFET active driver circuit according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of a test experiment turn-on waveform of a variable voltage SiC MOSFET active drive circuit according to one embodiment of the present invention;
FIG. 5 is a schematic diagram of a conventional test waveform for a driving circuit;
FIG. 6 is a schematic diagram of a turn-off waveform for a test experiment of a variable voltage SiC MOSFET active drive circuit according to one embodiment of the present invention;
fig. 7 is a schematic diagram of a turn-off waveform of a test experiment of a conventional driving circuit.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
As shown in fig. 1, a variable voltage SiC MOSFET active drive circuit includes: the driving circuit, the voltage sampling circuit, the pulse generating circuit and the source voltage circuit;
the voltage sampling circuit is used for collecting voltage signals at two ends of a grid source electrode in the switching process of the SiC MOSFET and transmitting the voltage signals to the pulse generating circuit;
the pulse generating circuit is used for generating a pulse signal according to the received voltage signal and transmitting the pulse signal to the source voltage circuit;
the source voltage circuit is used for outputting a driving voltage control signal to the SiC MOSFET according to the pulse signal;
the driving circuit is used for generating a gate driving voltage required by the SiC MOSFET switch.
Fig. 2 is a schematic structural diagram of a variable voltage SiC MOSFET active driving circuit according to an embodiment of the present invention.
The driving circuit comprises a first switch tube Q1, a second switch tube Q2 and a first resistor R1, wherein a collector of the first switch tube Q1 is connected with Vcc1 power supply voltage, an emitter of the first switch tube Q1 is connected with a first node, a base of the first switch tube Q1 is connected with a base of the second switch tube Q2, an emitter of the second switch tube Q2 is connected with the first node, a collector of the second switch tube Q2 is connected with Vee1 power supply voltage, one end of the first resistor R1 is connected with the first node, and the other end of the first resistor R1 is connected with a grid of the SiC MOSFET.
The voltage sampling circuit comprises a second resistor R2, a third resistor R3 and a first capacitor C1, wherein one end of the second resistor R2 is connected with the first node, the other end of the second resistor R2 is connected with the second node, one end of the third resistor R3 is connected with the second node, the other end of the third resistor R3 is grounded, one end of the first capacitor C1 is connected with the second node, and the other end of the first capacitor C1 is grounded.
The pulse generating circuit comprises a first voltage comparator COM1, a second voltage comparator COM2 and a first Logic gate Logic, wherein a positive input terminal of the first voltage comparator COM1 is connected with the second node, a negative input terminal of the first voltage comparator COM1 is connected with the first reference voltage Vref1, a negative input terminal of the second voltage comparator COM2 is connected with the second node, a positive input terminal of the second voltage comparator COM2 is connected with the second reference voltage Vref2, a first Logic gate Logic input terminal is connected with an output terminal of the first voltage comparator COM1, another output terminal of the first Logic gate Logic is connected with an output terminal of the second voltage comparator COM2, and the first Logic gate Logic output terminal is connected with the third node.
The source voltage circuit comprises a third switching tube Q3 and a fourth switching tube Q4, wherein the collector of the third switching tube Q3 is connected with Vcc2 power supply voltage, the base of the third switching tube Q3 is connected with the third node, the emitter of the third switching tube Q3 is connected with the source of the SiC MOSFET, the emitter of the fourth switching tube Q4 is connected with the source of the SiC MOSFET, the base of the fourth switching tube Q4 is connected with the third node, and the collector of the fourth switching tube Q4 is connected with Vee2 power supply voltage.
The edge voltage SiC MOSFET active driving circuit will be further explained by specific embodiments.
In an embodiment of the present invention, the Vcc1 gate power supply voltage, Vcc2 gate power supply voltage, Vee1 source power supply voltage and Vee2 source power supply voltage are determined according to the actually selected SiC MOSFET, Vcc2 and Vee2 are source power supply voltages of the SiC MOSFET, different voltages are applied in different stages of turning on and off the device (specifically, the turning on and off process of the device can be divided into 4 stages, respectively, and different source voltages are applied in different stages, for example, the turning on process is divided into stages 1,2,3, and 4, in stages 1,3, and 4, Vee2 is applied, and in stage 2, Vcc2 is applied).
In an embodiment of the present invention, the values of the second resistor R2, the third resistor R3 and the first capacitor C1 are not particularly limited.
In one embodiment of the invention, the models of the first comparator COM1 and the second comparator COM2 are not limited, the model of the first Logic gate Logic is not limited, and a and Logic gate is selected when an on experiment is performed, and a nand Logic gate is selected when an off experiment is performed.
In one embodiment of the invention, the determination of the values of the first reference voltage Vref1 and the second reference voltage Vref2 is related to the SiC MOSFET used and the drive voltage selected.
In an embodiment of the present invention, the first switching transistor Q1 and the third switching transistor Q3 are low-power NPN transistors, and the second switching transistor Q2 and the fourth switching transistor Q4 are low-power PNP transistors. The types of the first switch tube Q1, the second switch tube Q2, the third switch tube Q3 and the fourth switch tube Q4 are not limited.
The voltage-variable SiC MOSFET active driving circuit provided by the embodiment of the invention can inhibit current, voltage overshoot and oscillation in the switching process of the SiC MOSFET, and is realized based on the circuit, and the specific working principle is as follows:
in the process of turning on the SiC MOSFET, the first Logic gate Logic selects an AND Logic gate, a voltage sampling circuit samples the grid-source voltage of the SiCSMOSFET, the voltage is divided by an oversampling resistor and then transmitted into a first voltage comparator COM1 and a second voltage comparator COM2, when the divided voltage is lower than a first reference voltage Vref1, the first voltage comparator COM1 outputs a low level, the second voltage comparator COM2 outputs a high level, so the first Logic gate Logic outputs a low level, a third switching tube Q3 is turned off, a fourth switching tube Q4 is turned on, when the divided voltage is higher than the first reference voltage Vref1 and lower than the second reference voltage Vref2, the first voltage comparator COM1 and the second voltage comparator COM2 both output a high level, so the first Logic gate Logic outputs a high level, the third switching tube Q3 is turned on, the fourth switching tube Q4 is turned off, and when the divided voltage is higher than the second reference voltage Vref2, the first Logic gate voltage comparator COM1 outputs a high level, the second voltage comparator COM2 outputs a low level, so the first Logic gate Logic outputs a low level, the third switch Q3 is turned off, and the fourth switch Q4 is turned on. Therefore, the source voltage of the device is changed in a specific time period of the turn-on process of the SiCMOS MOSFET, the increase rate of the drain current of the SiC MOSFET is inhibited, and the current overshoot and oscillation in the turn-on process of the SiC MOSFET are inhibited.
In the turn-off process of the SiC MOSFET, a NAND Logic gate is selected as the first Logic gate Logic, a voltage sampling circuit samples the grid-source voltage of the SiC MOSFET, the voltage is divided by an oversampling resistor and then transmitted into a first voltage comparator COM1 and a second voltage comparator COM2, when the divided voltage is lower than a first reference voltage Vref1, the first voltage comparator COM1 outputs a low level, the second voltage comparator COM2 outputs a high level, so that the first Logic gate Logic outputs a low level, a third switching tube Q3 is turned off, a fourth switching tube Q4 is turned on, when the divided voltage is higher than the first reference voltage Vref1 and lower than the second reference voltage Vref2, the first voltage comparator COM1 and the second voltage comparator COM2 both output a high level, so that the first Logic gate Logic outputs a high level, the third switching tube Q3 is turned on, the fourth switching tube Q4 is turned off, and when the divided voltage is higher than the second reference voltage Vref2, the first Logic gate COM1 outputs a high level, the second voltage comparator COM2 outputs a low level, so the first Logic gate Logic outputs a low level, the third switch Q3 is turned off, and the fourth switch Q4 is turned on. Therefore, the source voltage of the device is changed in a specific time period in the turn-off process of the SiC MOSFET, and the rising rate of the drain-source voltage of the SiC MOSFET is inhibited, so that voltage overshoot and oscillation in the turn-off process of the SiCMOS MOSFET are inhibited.
Fig. 3 is a double-pulse test circuit of this embodiment, which is used to test the actual effect of the variable voltage SiCMOSFET active drive circuit of the embodiment of the present invention, where D is a freewheeling diode connected to the drain of the SiC MOSFET, L is a load inductor connected in parallel to the freewheeling diode, Vdc is a dc bus voltage, the anode is connected to the cathode of the diode, and the cathode is grounded. As can be seen from fig. 4 and 5, the voltage-variable active driving circuit provided by the present invention can effectively suppress current overshoot and oscillation during the turn-on process of the device compared to the conventional circuit, and as can be seen from fig. 6 and 7, the voltage-variable active driving circuit provided by the present invention can effectively suppress voltage overshoot and oscillation during the turn-off process of the device compared to the conventional circuitAnd (6) oscillating. U in FIGS. 4-7gs、uds、idRespectively a device gate-source voltage, a drain-source voltage and a drain current.
In summary, the variable voltage SiC MOSFET active driving circuit of the embodiment of the present invention can detect the gate-source voltage of a device during the operation of the SiC MOSFET, and change the driving voltage of the device during a specific period of switching of the device, thereby suppressing current, voltage overshoot, and oscillation during the switching of the device. The SiC MOSFET active driving circuit can be used as a driving circuit of various SiCMOS, and is applied to application occasions of high power density, high temperature and the like, such as various devices of photovoltaic inverters, transformers, electric vehicles and the like.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (6)
1. A variable voltage SiC MOSFET active drive circuit, comprising: the driving circuit, the voltage sampling circuit, the pulse generating circuit and the source voltage circuit;
the voltage sampling circuit is used for collecting voltage signals at two ends of a grid source electrode of a device in the switching process of the SiC MOSFET and transmitting the voltage signals to the pulse generating circuit;
the pulse generating circuit is used for generating a pulse signal according to the received voltage signal and transmitting the pulse signal to the source voltage circuit;
the source voltage circuit is used for outputting a driving voltage control signal to the SiC MOSFET according to the pulse signal;
the driving circuit is used for generating a gate driving voltage required by the SiC MOSFET switch.
2. The variable voltage SiC MOSFET active driving circuit of claim 1, comprising a first switching transistor Q1, a second switching transistor Q2, a first resistor R1, and a first node, wherein the collector of the first switching transistor Q1 is connected to Vcc1 supply voltage, the emitter of the first switching transistor Q1 is connected to the first node, the base of the first switching transistor Q1 is connected to the base of the second switching transistor Q2, the emitter of the second switching transistor Q2 is connected to the first node, the collector of the second switching transistor Q2 is connected to Vee1 supply voltage, one end of the first resistor R1 is connected to the first node, the other end of the first resistor R1 is connected to the SiC MOSFET gate, and Vcc1 and Vee1 represent the gate turn-on voltage and turn-off voltage of the SiC MOSFET, respectively.
3. The variable voltage SiC MOSFET active driving circuit of claim 2, wherein the voltage sampling circuit comprises a second resistor R2, a third resistor R3, a first capacitor C1, and a second node, wherein one end of the second resistor R2 is connected to the first node, the other end of the second resistor R2 is connected to the second node, one end of the third resistor R3 is connected to the second node, the other end of the third resistor R3 is connected to ground, one end of the first capacitor C1 is connected to the second node, and the other end of the first capacitor C1 is connected to ground.
4. The variable voltage SiC MOSFET active drive circuit of claim 3, wherein the pulse generation circuit comprises a first voltage comparator COM1, a second voltage comparator COM2 and a first Logic gate Logic, wherein a positive input terminal of the first voltage comparator COM1 is connected to the second node, a negative input terminal of the first voltage comparator COM1 is connected to a first reference voltage Vref1, a negative input terminal of the second voltage comparator COM2 is connected to the second node, a positive input terminal of the second voltage comparator COM2 is connected to a second reference voltage Vref2, a first input terminal of the first Logic gate Logic is connected to an output terminal of the first comparator COM1, another output terminal of the first Logic gate Logic is connected to an output terminal of the second comparator COM2, and the output terminal of the first Logic gate Logic is connected to the source voltage circuit.
5. The variable voltage SiC MOSFET active drive circuit of claim 4, wherein the first reference voltage Vref1 and the second reference voltage Vref2 are reference voltages of a comparator, the values of which are set as desired.
6. A variable voltage SiC MOSFET active drive circuit as claimed in claim 4,
the source voltage circuit comprises a third switching tube Q3, a fourth switching tube Q4 and a third node, wherein the collector of the third switching tube Q3 is connected with Vcc2 power supply voltage, the base of the third switching tube Q3 is connected with the third node, the emitter of the third switching tube Q3 is connected with the source of the SiC MOSFET, the emitter of the fourth switching tube Q4 is connected with the source of the SiC MOSFET, the base of the fourth switching tube Q4 is connected with the third node, the collector of the fourth switching tube Q4 is connected with Vee2 power supply voltage, and the third node is further connected with the output end of the first Logic gate Logic; vcc2 and Vee2 are the source voltages of SiC MOSFETs.
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| CN202010097060.5A CN111211770B (en) | 2020-02-17 | 2020-02-17 | Voltage-variable SiC MOSFET active driving circuit |
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| CN202010097060.5A CN111211770B (en) | 2020-02-17 | 2020-02-17 | Voltage-variable SiC MOSFET active driving circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977905A (en) * | 2016-07-04 | 2016-09-28 | 西安电子科技大学 | Over-current and over-voltage and under-voltage drive protection system based on SiC MOSFET |
| CN108649785A (en) * | 2018-05-31 | 2018-10-12 | 中国矿业大学 | Two level converter the dead time method of SiC MOSFET three-phases |
| CN109818599A (en) * | 2019-01-03 | 2019-05-28 | 北京交通大学 | A kind of voltage injection type SiC MOSFET active driving circuit |
| CN109861679A (en) * | 2019-01-03 | 2019-06-07 | 北京交通大学 | Injection Current type SiC MOSFET active driving circuit |
-
2020
- 2020-02-17 CN CN202010097060.5A patent/CN111211770B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977905A (en) * | 2016-07-04 | 2016-09-28 | 西安电子科技大学 | Over-current and over-voltage and under-voltage drive protection system based on SiC MOSFET |
| CN108649785A (en) * | 2018-05-31 | 2018-10-12 | 中国矿业大学 | Two level converter the dead time method of SiC MOSFET three-phases |
| CN109818599A (en) * | 2019-01-03 | 2019-05-28 | 北京交通大学 | A kind of voltage injection type SiC MOSFET active driving circuit |
| CN109861679A (en) * | 2019-01-03 | 2019-06-07 | 北京交通大学 | Injection Current type SiC MOSFET active driving circuit |
Non-Patent Citations (1)
| Title |
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| 冯超等: "抑制瞬态电压电流尖峰和振荡的电流注入型SiC MOSFET有源驱动方法研究" * |
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