CN213364950U - IGBT junction temperature measuring device - Google Patents
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Abstract
The utility model discloses a IGBT junction temperature measuring device, through measuring IGBT's projecting pole electric current and turn-off delay time, combine IGBT junction temperature and turn-off delay time, emitter current's relation, realize the on-line measuring of IGBT junction temperature. The utility model discloses well turn-off delay time obtains through measuring the voltage between IGBT's supplementary projecting pole and the projecting pole, and turn-off delay time then is measured by time digital converter and obtains. The utility model overcomes current IGBT junction temperature detection method's shortcoming utilizes the time digital conversion technique of rapid development in recent years, converts time signal into digital signal, only needs to gather induced voltage and projecting pole electric current on the parasitic inductance of projecting pole, and it is simple to have the modeling, measures easily, advantages such as precision height.
Description
Technical Field
The utility model relates to a junction temperature measuring device is applied to power electronic device performance and detects technical field.
Background
In recent years, with the development of social economy, the electric energy conversion technology is widely applied to the fields of new energy power generation, power transmission, transportation and the like. As the most widely used power device in a high-power electronic converter, the IGBT needs to face more complicated working conditions. The high safety requirement of the system further enables the reliability of the power device to become one of research hotspots, and the improvement of the reliability of the IGBT has important significance for ensuring the safe operation of a high-power electronic system. Studies have shown that 31% of power electronic converter failures are caused by failure of the power electronics; wherein 60% of power electronics failures are caused by excess temperature; moreover, the probability of device failure doubles for every 10 ℃ increase in junction temperature of the power electronic device. Too high a junction temperature can lead to various problems. When the junction temperature is higher, the voltage resistance of the device is reduced, and the device is easy to cause overvoltage breakdown and failure; when the junction temperature is high, the thermal stress between materials in the device is increased, and welding layer loosening and bonding wire fracture are easily caused, so that the device is failed. Therefore, the detection of the junction temperature in the operating process of the IGBT is important for improving the reliability of the IGBT.
Currently, there are three main types of junction temperature measurement systems for IGBTs.
The first system uses the principle of direct measurement, and utilizes the temperature of thermal elements such as thermal resistors, thermocouples or diodes implanted in the IGBT module to estimate the temperature at the IGBT chip. Because the temperature at the chip and the thermistor are not exactly the same, and the thermistor has a longer response time to temperature, the dynamic performance is poor.
The second system is non-contact, the IGBT junction temperature is measured by adopting a thermal imaging technology, the method can obtain higher precision, but the packaging structure of the IGBT needs to be damaged, and the method is destructive and only suitable for laboratory measurement.
A third type of system measures junction temperature using the temperature sensitive inductive parameters of the device itself. Typical thermal inductance parameters include saturation voltage drop of the IGBT, voltage drop rate when the IGBT is turned on, current drop rate when the IGBT is turned off, peak value of miller plateau voltage, peak value of IGBT turn-on gate current, turn-on delay time, turn-off delay time, and the like. The method based on measuring the saturation voltage drop of the IGBT is divided into a large current injection method and a small current injection method, wherein the two methods are that a specific current value is injected into the IGBT in a clearance when a system stops running, junction temperature is estimated according to the relation between the saturation voltage drop and the junction temperature, and the method is not suitable for online measurement; the IGBT junction temperature measurement system based on measurement of grid signals or turn-on delay time leads to low sensitivity and poor accuracy of measurement results. Research shows that the relation between the turn-off delay time and the junction temperature of the IGBT is the most linear, and the sensitivity is the highest.
The existing method for extracting the turn-off delay time of the IGBT collects the grid voltage and the emitter voltage signal of the IGBT and compares the grid voltage and the emitter voltage signal with a threshold value respectively to obtain the starting point and the ending point of the turn-off delay. The method has a large detection amount, and an external circuit needs extremely high bandwidth. In addition, when the relation between the turn-off delay time of the IGBT and the collector current is calibrated offline, the linear relation between the junction temperature and the turn-off delay time needs to be measured under a specific collector current.
The utility model aims to overcome the shortcoming of current IGBT junction temperature detection method, turn off the relation of delay time and junction temperature to the IGBT and carry out linearization and handle, establish its slope and intercept about the function model of IGBT forward conduction current. And converts the time signal into a digital signal using a time-to-digital conversion technique that has been rapidly developed in recent years. The method only needs to collect the induction voltage and the collector current on the emitter parasitic inductance, and has the advantages of simple modeling, easy measurement, high precision and the like.
SUMMERY OF THE UTILITY MODEL
In order to solve the prior art problem, the utility model aims to overcome the not enough of prior art existence, provide an IGBT junction temperature measuring device, utilize the induced voltage on the parasitic inductance of IGBT projecting pole to draw IGBT's turn-off delay time, according to the relation of IGBT turn-off delay time and IGBT's collector current, on-line measurement IGBT junction temperature.
In order to achieve the purpose of the invention, the utility model adopts the following technical scheme:
the IGBT junction temperature measuring device comprises an IGBT to be measured and a data analysis system, wherein the IGBT to be measured is respectively connected with an IGBT control unit and a voltage VeEThe collector comprises an acquisition unit, a collector current acquisition unit and a collector-emitter voltage acquisition unit;
the IGBT to be tested is used as a test object and provides a test port;
voltage VeEThe acquisition unit is used for acquiring the potential difference V between the auxiliary emitter E and the power emitter E of the IGBT to be testedeE；
A collector current collecting unit for collecting collector current i of the IGBT to be testedc；
A collector-emitter voltage acquisition unit for acquiring the potential difference V between the collector C and the emitter E of the IGBT to be testedCE；
Said voltage VeEThe acquisition unit is connected with a delay time measuring unit through a starting point time base comparator and a finishing point time base comparator;
the start time base comparator and the end time base comparator are based on VeERespectively acquiring initial and ending pulse signals of a turn-off delay stage of the IGBT to be detected;
the delay time measuring unit is used for measuring the turn-off delay time of the IGBT to be tested according to the start and stop information of the turn-off delay stage;
the IGBT control unit is used for controlling the on-off of the IGBT to be tested and controlling the work of the collector current acquisition unit, the collector-emitter voltage acquisition unit and the delay time measurement unit;
the collector-emitter voltage acquisition unit, the collector current acquisition unit and the delay time measurement unit are connected with a junction temperature calculation unit and used for processing data and calculating the junction temperature of the IGBT to be measured.
Preferably, the IGBT control unit is connected with the IGBT to be tested and is connected with the collector current collecting unit, the collector-emitter voltage collecting unit and the delay time measuring unit. The collector current collecting unit and the emitter voltage collecting unit respectively collect collector current of the IGBT to be tested and collector emitter voltage of the IGBT to be tested; voltage VeEThe acquisition unit acquires the voltage of the emitter and the auxiliary emitter of the IGBT to be detected and is connected with the starting point time base comparator and the end point time base comparator; the delay time measuring unit receives the outputs of the starting time base comparator and the ending time base comparator; and the junction temperature calculating unit receives the signals of the collector current collecting unit and the collector-emitter voltage collecting unit and the output of the delay time measuring unit.
Preferably, the voltage VeEThe acquisition unit comprises two operational amplifiers U1_ A-U1 _ B, nine resistors R10-R18 and three capacitors C10-C12.Wherein an input signal VeEOne end of the R11 is connected with the R12 and the other end of the R10 is connected with the R11, the other end of the R11 is connected with the R12 and the non-inverting input end of the operational amplifier U1_ A, the other end of the R12 is connected with the ground, one end of the R13 is connected with the R14 and the inverting input end of the operational amplifier U1_ A, the other end of the R14 is connected with the output end of the operational amplifier U1_ A and the R15, the other end of the R15 is connected with the R15 and the non-inverting input end of the operational amplifier U15 _ B, the other end of the R15 is connected with the reference voltage, the inverting input end of the U15 _ B is connected with the R15, the other end of the R15 is connected with the output end of the U15 _ B and the R15, the other end of the R15 is connected with the output signal terminal, the C15 is connected with the R15 in parallel, the.
Preferably, the collector current collecting unit includes a current sensor, a first shaping circuit and a first signal output, which are connected in sequence.
Preferably, the collector-emitter voltage collecting unit includes a voltage sensor, a second shaping circuit and a second signal output connected in sequence.
Preferably, the starting time-base comparator comprises a comparator U2, two resistors R20-R21, one end of R20 is grounded, and the other end is connected with the voltage VeEThe output terminal of the acquisition unit and the non-inverting input terminal of the comparator U2, the inverting input terminal of the comparator U2 is connected with a reference level, one end of the resistor R21 is grounded, and the other end of the resistor R21 is connected with the output terminal of the comparator U2 and is connected with an output signal terminal.
Preferably, the end time-base comparator comprises a comparator U3, two resistors R30 and R31, one end of R30 is grounded, and the other end is connected with the voltage VeEThe output terminal of the acquisition unit and the inverting input terminal of the comparator U3, the non-inverting input terminal of the comparator U3 is connected with the reference level, one end of the resistor R31 is grounded, and the other end of the resistor R31 is connected with the output terminal of the comparator U3 and is connected with the output signal terminal.
The control flow of the control unit of the IGBT junction temperature detection device comprises the following steps:
step 2-passing t2Time, the IGBT control unit controls the turn-off delay time measuring unit to work through S3, and calculates the time difference t between the start pulse and the end pulsedoff。
And 3, calculating the junction temperature of the IGBT to be measured by a junction temperature calculating unit according to the relation among the turn-off delay time, the collector current and the junction temperature, and returning to the step 1.
Compared with the prior art, the utility model, have following substantive characteristics and advantage:
the utility model discloses a measure IGBT's collecting electrode current and turn-off delay time, combine IGBT junction temperature and turn-off delay time, collecting electrode current's relation, realize the on-line measuring of IGBT junction temperature. The utility model discloses well turn-off delay time obtains through measuring the voltage between IGBT's supplementary projecting pole and the projecting pole, and turn-off delay time then is measured by time digital converter and obtains. The utility model overcomes current IGBT junction temperature detection method's shortcoming utilizes the time digital conversion technique of rapid development in recent years, converts time signal into digital signal, only needs to gather induced voltage and collector current on the parasitic inductance of projecting pole, and it is simple to have the modeling, measures easily, advantages such as precision height.
Drawings
FIG. 1 is a schematic structural diagram of a detection device.
FIG. 2 shows the voltage VeEAnd collecting a circuit diagram of the unit.
Fig. 3 is a schematic structural diagram of the current collecting unit.
Fig. 4 is a schematic structural diagram of the voltage acquisition unit.
Fig. 5 is a circuit diagram of a starting time base comparator.
FIG. 6 is a circuit diagram of a comparator when terminating.
Fig. 7 is a circuit diagram of the delay time measuring unit.
Fig. 8 is a schematic diagram of a control process of the control unit.
Fig. 9 is a schematic diagram of the mechanism of the induced voltage on the parasitic inductance of the emitter.
FIG. 10 shows different collector currents tdoff＝f(Tj) Is shown in linear relationship.
FIG. 11 shows different collector currents tdoff＝f(Tj) A slope of the linear relationship of (a).
FIG. 12 shows different collector currents tdoff＝f(Tj) Intercept plot of linear relationship of (c).
FIG. 13 shows IGBT junction temperature, collector current and turn-off delay time tdoffA graph of the relationship (c).
Detailed Description
The preferred embodiments of the present invention are detailed as follows:
the first embodiment is as follows:
in this embodiment, referring to fig. 1, an IGBT junction temperature measurement device includes an IGBT (1) to be measured and a data analysis system, where the IGBT (1) to be measured is connected to an IGBT control unit 9 and a voltage V, respectivelyeEAn acquisition unit 2), a collector current acquisition unit 3) and a collector-emitter voltage acquisition unit 4);
the IGBT (1) to be tested is used as a test object and provides a test port;
voltage VeEThe acquisition unit 2 is used for acquiring the potential difference V between the auxiliary emitter E and the emitter E of the IGBT (1) to be detectedeE；
A collector current collecting unit 3 for collecting the collector current i of the IGBT (1) to be testedc；
A collector-emitter voltage collecting unit 4 for collecting the potential difference V between the collector C and the emitter E of the IGBT (1) to be testedCE；
Said voltage VeEThe acquisition unit 2 is connected with a delay time measuring unit 7 through a starting point time base comparator 5 and an end point time base comparator 6;
the start time base comparator 5 and the end time base comparator 6 are based on VeERespectively acquiring initial and ending pulse signals of a turn-off delay stage of the IGBT (1) to be detected;
the delay time measuring unit 7 is used for measuring the turn-off delay time of the IGBT (1) to be tested according to the start and stop information of the turn-off delay stage;
the IGBT control unit 9 is used for controlling the on-off of the IGBT (1) to be tested and controlling the work of the collector current acquisition unit 3, the collector-emitter voltage acquisition unit 4 and the delay time measurement unit 7;
the collector-emitter voltage acquisition unit 4, the collector current acquisition unit 3 and the delay time measurement unit 7 are connected with a junction temperature calculation unit 8, and are used for processing data and calculating the junction temperature of the IGBT (1) to be measured.
Example two
This embodiment is substantially the same as the first embodiment, and is characterized in that:
in the present embodiment, referring to fig. 2 to 9, the IGBT control unit 9 is connected to the IGBT (1) to be tested, and is connected to the collector current collecting unit 3, the collector-emitter voltage collecting unit 4, and the delay time measuring unit 7. The collector current collecting unit 3 and the collector emitter voltage collecting unit 4 respectively collect collector current of the IGBT (1) to be tested and collector emitter voltage of the IGBT (1) to be tested; voltage VeEThe acquisition unit 2 acquires the voltage of an emitting electrode and an auxiliary emitting electrode of the IGBT (1) to be detected and is connected with the starting point time base comparator 5 and the end point time base comparator 6; the delay time measuring unit 7 receives the outputs of the start time base comparator 5 and the end time base comparator 6; the junction temperature calculating unit 8 receives the signals of the collector current collecting unit 3 and the collector-emitter voltage collecting unit 4 and the output of the delay time measuring unit 7.
In the present embodiment, the voltage VeEThe acquisition unit 2 comprises two operational amplifiers U1_ A-U1 _ B, nine resistors R10-R18 and three capacitors C10-C12. Wherein an input signal VeEOne end of the R11 is connected with the R12 and is connected with the non-inverting input end of the operational amplifier U1_ A, the other end of the R12 is connected with the ground, one end of the R13 is connected with the R14 and is connected with the inverting input end of the operational amplifier U1_ A, the other end of the R14 is connected with the output end of the operational amplifier U1_ A and is connected with the R15, the other end of the R15 is connected with the R16 and is connected with the non-inverting input end of the operational amplifier U1_ B, the other end of the R16 is connected with the reference voltage 2V5, the inverting input end of the U1_ B is connected with R17, and the other end of the R17 is connected with the R11One end of the R18 is connected with the output end of the U1_ B and is also connected with the R18, the other end of the R18 is connected with an output signal terminal, C10 is connected with R10 in parallel, C11 is connected with R11 in parallel, and C12 is connected with R12 in parallel.
In this embodiment, the collector current collecting unit 3 includes a current sensor 3-1, a first shaping circuit 3-2, and a first signal output 3-3, which are connected in sequence. The collector-emitter voltage acquisition unit 4 comprises a voltage sensor 4-1, a second shaping circuit 4-2 and a second signal output 4-3 which are connected in sequence. The starting time base comparator 5 comprises a comparator U2 and two resistors R20-R21, wherein one end of R20 is grounded, and the other end is connected with the voltage VeEThe output terminal of the acquisition unit 2 and the non-inverting input terminal of the comparator U2, the inverting input terminal of the comparator U2 is connected with the reference level, one end of the resistor R21 is grounded, and the other end of the resistor R21 is connected with the output terminal of the comparator U2 and is connected with the output signal terminal.
In this embodiment, the end time-base comparator 6 comprises a comparator U3, two resistors R30 and R31, one end of R30 is connected to ground, and the other end is connected to the voltage VeEThe output terminal of the acquisition unit 2 and the inverting input terminal of the comparator U3, the non-inverting input terminal of the comparator U3 is connected with the reference level, one end of the resistor R31 is grounded, and the other end of the resistor R is connected with the output terminal of the comparator U3 and is connected with the output signal terminal.
EXAMPLE III
This embodiment is substantially the same as the previous embodiment, and is characterized in that:
in the present embodiment, referring to fig. 1, the IGBT control unit 9 is connected to the IGBT to be tested, and is connected to the collector current collecting unit 3, the collector-emitter voltage collecting unit 4, and the delay time measuring unit 7. The collector current collecting unit 3 and the collector emitter voltage collecting unit 4 respectively collect the collector current of the IGBT to be tested and the collector emitter voltage of the IGBT to be tested; the voltage VeE acquisition unit 2 acquires the voltages of the emitter and the auxiliary emitter of the IGBT to be tested, and is connected with the starting point time base comparator 5 and the end point time base comparator 6; the delay time measuring unit 7 receives the outputs of the start time base comparator 5 and the end time base comparator 6; the junction temperature calculating unit 8 receives the signals of the collector current collecting unit 3 and the collector-emitter voltage collecting unit 4 and the output of the delay time measuring unit 7;
as shown in fig. 2, the voltage VeE acquisition unit 2 includes two operational amplifiers U1_ a to U1_ B, nine resistors R10 to R18, and three capacitors C10 to C12. Wherein, input signal VeE is grounded at one end and connected with resistor R10 at the other end, R10 is connected with R11 at the other end, R11 is connected with R12 and connected with the non-inverting input end of operational amplifier U1_ A, R1 is grounded at the other end, R1 is grounded at one end and connected with R1 and connected with the inverting input end of operational amplifier U1_ A, R1 is connected with the output end of operational amplifier U1_ A and R1 at the other end, R1 is connected with R1 and connected with the non-inverting input end of operational amplifier U1_ B, R1 is connected with reference voltage 2V 1 at the other end, U1_ B is connected with R1 at the inverting input end, R1 is connected with U1_ B at the other end and connected with R1, R1 collects conditioned SIG signal, C1 is connected with R1 in parallel;
as shown in fig. 3, the collector current collecting unit 3 includes a current sensor 3-1, a first shaping circuit 3-2 and a first signal output 3-3, which are connected in sequence;
as shown in fig. 4, the collector-emitter voltage collecting unit 4 includes a voltage sensor 4-1, a second shaping circuit 4-2 and a second signal output 4-3 connected in sequence;
as shown in fig. 5, the starting point time-base comparator 5 includes a comparator U2 and two resistors R20 to R21. One end of the resistor R20 is grounded, the other end of the resistor R20 is connected with the non-inverting input ends of the voltage VeE acquisition unit 2 and the comparator U2, the inverting input end of the comparator U2 is connected with the reference level, one end of the resistor R21 is grounded, and the other end of the resistor R21 is connected with the output end of the comparator U2 and is connected with an output signal terminal;
as shown in fig. 6, the end time-base comparator 6 includes a comparator U3, two resistors R30-R31, one end of R30 is grounded, the other end is connected to the inverting input terminals of the voltage VeE acquisition unit 2 and the comparator U3, the non-inverting input terminal of the comparator U3 is connected to the reference level, one end of the resistor R31 is grounded, and the other end is connected to the output terminal of the comparator U3 and is connected to the output signal terminal;
as shown in fig. 7, the control flow of the control unit includes the following steps:
And 3, calculating the junction temperature of the IGBT to be measured by the junction temperature calculating unit 8 according to the relation among the turn-off delay time, the collector current and the junction temperature, and returning to the step 1.
As shown in fig. 8, the mechanism of the voltage induced in the parasitic inductance of the emitter when the IGBT is turned off is that i changes abruptly at the start time of turn-offgAt LekThe upper induction is obtained by the collector current i changing suddenly when the IGBT starts to turn off, namely the turn-off is delayed to be stoppedcAt LkEObtaining upper induction;
IGBT turn-off delay time t as shown in FIG. 9doffThe slope and intercept at different collector currents are shown in fig. 10 and 11, which are linearly and positively correlated with the junction temperature.
Fig. 12-13 show graphs of junction temperature, collector current and turn-off delay time; off delay time tdoffJunction temperature TjAnd IGBT collector current IcCan be fitted using the following equation:
the above description is combined with the drawings to explain the embodiment of the utility model, but the utility model discloses be not limited to above-mentioned embodiment, can also according to the utility model discloses a multiple change is made to the purpose of creation, the all foundation the utility model discloses change, modification, substitution, combination or simplification of doing under technical scheme's the spirit essence and the principle all should be equivalent replacement mode, as long as accord with the utility model discloses a utility model aims at, as long as do not deviate from the utility model discloses IGBT junction temperature measuring device's technical principle and utility model conceive, all belong to the utility model discloses a protection range.
Claims (7)
1. The utility model provides a IGBT junction temperature measuring device, includes awaiting measuring IGBT (1) and data analysis system, its characterized in that: the IGBT (1) to be tested is respectively connected with an IGBT control unit (9) and a voltage VeEThe collector comprises a collecting unit (2), a collector current collecting unit (3) and a collector-emitter voltage collecting unit (4);
the IGBT (1) to be tested is used as a test object and provides a test port;
voltage VeEThe acquisition unit (2) is used for acquiring the potential difference V between the auxiliary emitter E and the power emitter E of the IGBT (1) to be detectedeE；
A collector current collecting unit (3) for collecting the collector current i of the IGBT (1) to be testedc；
A collector-emitter voltage acquisition unit (4) for acquiring the potential difference V between the collector C and the power emitter E of the IGBT (1) to be testedCE；
The voltage VeEThe acquisition unit (2) is connected with a delay time measuring unit (7) through a starting time base comparator (5) and an end time base comparator (6);
a start time base comparator (5) and an end time base comparator (6) based on VeERespectively acquiring initial and ending pulse signals of a turn-off delay stage of the IGBT (1) to be detected;
the delay time measuring unit (7) is used for measuring the turn-off delay time of the IGBT (1) to be measured according to the start and stop information of the turn-off delay stage;
the IGBT control unit (9) is used for controlling the on-off of the IGBT (1) to be tested and controlling the work of the collector current acquisition unit (3), the collector-emitter voltage acquisition unit (4) and the delay time measurement unit (7);
the collector-emitter voltage acquisition unit (4), the collector current acquisition unit (3) and the delay time measurement unit (7) are connected with a junction temperature calculation unit (8) and used for processing data and calculating the junction temperature of the IGBT (1) to be measured.
2. According toThe IGBT junction temperature measurement device of claim 1, wherein: the IGBT control unit (9) is connected with the IGBT (1) to be tested and is connected with the collector current acquisition unit (3), the collector-emitter voltage acquisition unit (4) and the delay time measurement unit (7); the collector current collecting unit (3) and the collector voltage collecting unit (4) respectively collect the collector current of the IGBT (1) to be tested and the collector emitter voltage of the IGBT (1) to be tested; voltage VeEThe acquisition unit (2) acquires the voltages of the emitter and the auxiliary emitter of the IGBT (1) to be detected, and is connected with the starting point time base comparator (5) and the end point time base comparator (6); a delay time measuring unit (7) receives the outputs of the start time base comparator (5) and the end time base comparator (6); the junction temperature calculating unit (8) receives signals of the collector current collecting unit (3) and the collector-emitter voltage collecting unit (4) and the output of the delay time measuring unit (7).
3. The IGBT junction temperature measurement device according to claim 1, wherein: the voltage VeEThe acquisition unit (2) comprises two operational amplifiers U1_ A-U1 _ B, nine resistors R10-R18 and three capacitors C10-C12; wherein an input signal VeEOne end of the R11 is connected with the R12 and connected with a non-inverting input end of an operational amplifier U1_ A, the other end of the R12 is connected with the ground, one end of the R13 is connected with the R14 and connected with an inverting input end of the operational amplifier U1_ A, the other end of the R14 is connected with an output end of the operational amplifier U1_ A and connected with the R15, the other end of the R15 is connected with the R15 and connected with a non-inverting input end of the operational amplifier U15 _ B, the other end of the R15 is connected with a reference voltage, the inverting input end of the U15 _ B is connected with the R15, the other end of the R15 is connected with the output end of the U15 _ B and also connected with the R15, the other end of the R15 is connected with an output signal terminal, the C15 is connected with the R15 in parallel, and the R15 are connected with.
4. The IGBT junction temperature measurement device according to claim 1, wherein: the collector current acquisition unit (3) comprises a current sensor (3-1), a first shaping circuit (3-2) and a first signal output (3-3) which are connected in sequence.
5. The IGBT junction temperature measurement device according to claim 1, wherein: the collector-emitter voltage acquisition unit (4) comprises a voltage sensor (4-1), a second shaping circuit (4-2) and a second signal output (4-3) which are connected in sequence.
6. The IGBT junction temperature measurement device according to claim 1, wherein: the starting time base comparator (5) comprises a comparator U2 and two resistors R20-R21, wherein one end of R20 is grounded, and the other end is connected with the voltage VeEThe output terminal of the acquisition unit (2) and the non-inverting input terminal of the comparator U2, the inverting input terminal of the comparator U2 is connected with a reference level, one end of the resistor R21 is grounded, and the other end of the resistor R21 is connected with the output terminal of the comparator U2 and is connected with an output signal terminal.
7. The IGBT junction temperature measurement device according to claim 1, wherein: the terminal time-base comparator (6) comprises a comparator U3, two resistors R30 and R31, one end of R30 is grounded, and the other end is connected with the voltage VeEThe output terminal of the acquisition unit (2) and the inverting input terminal of the comparator U3, the non-inverting input terminal of the comparator U3 is connected with a reference level, one end of the resistor R31 is grounded, and the other end of the resistor R31 is connected with the output terminal of the comparator U3 and is connected with an output signal terminal.
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| CN202020718234.0U CN213364950U (en) | 2020-05-06 | 2020-05-06 | IGBT junction temperature measuring device |
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| CN202020718234.0U CN213364950U (en) | 2020-05-06 | 2020-05-06 | IGBT junction temperature measuring device |
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2020
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