CN111090031A - IGBT overcurrent early warning system and method - Google Patents
IGBT overcurrent early warning system and method Download PDFInfo
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- CN111090031A CN111090031A CN201911381670.1A CN201911381670A CN111090031A CN 111090031 A CN111090031 A CN 111090031A CN 201911381670 A CN201911381670 A CN 201911381670A CN 111090031 A CN111090031 A CN 111090031A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
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Abstract
The invention discloses an IGBT over-current early warning system and method, wherein the system comprises a driving module, an IGBT with the same specification as a target IGBT, a temperature acquisition module, a voltage acquisition module and a signal processing and control module; the driving module is respectively connected with the IGBT and the signal processing and control module which have the same specification with the target IGBT, and the IGBT which has the same specification with the target IGBT is connected with the temperature acquisition module and the voltage acquisition module; the temperature acquisition module and the voltage acquisition module are respectively connected with the signal processing and control module. According to the invention, the influence of temperature and aging on the IGBT is combined, and a new early warning threshold value determining method is established, so that the early warning threshold value of the IGBT at any temperature at any moment is more accurate, the problem of low reliability of the existing early warning method is solved, and the reliability of the IGBT in working can be increased.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an IGBT overcurrent early warning system and method.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor switch device, is widely applied to medium and large power equipment, improves the reliability of a power electronic system to a certain extent, can effectively prevent accidental faults of the power electronic system, and approximately 42 percent of switches used in the power electronic system are the IGBTs.
While power semiconductor devices are the weakest component of power electronic converters, about 34% of power electronic system failures are caused by chip or solder failures of power electronic devices, which may have serious consequences and huge economic losses if real-time and effective maintenance measures cannot be taken quickly.
The IGBT driving circuit usually monitors Vce (collector-emitter voltage) to monitor the overcurrent of the IGBT. The principle is that when the temperature is constant, the Vce of the IGBT can increase along with the increase of the current flowing through the IGBT, the protection threshold value is usually set to a fixed value by the current IGBT driving circuit, and when the fact that the Vce exceeds the protection threshold value is detected, overcurrent early warning is carried out.
Because the IGBT has the positive temperature characteristic, the Vce voltage is increased along with the temperature rise under the condition of the same conduction current, and therefore, the protection mode of a fixed threshold value is adopted, only one section of overcurrent early warning function can be realized, the IGBT with different working temperatures cannot be adapted, and the reliability is poor.
A few IGBT overcurrent protection methods which can adapt to different temperatures change the protection threshold of the IGBT according to different temperatures, and further realize the overcurrent early warning of the whole section of the IGBT. However, the method does not consider the influence of the aging of the IGBT on Vce: after repeated use, the IGBT suffers from deterioration. The temperature has an influence on Vce of the IGBT, and meanwhile, the aging of the IGBT also has an influence on Vce, for example, the conditions of common bonding wire cracking, solder layer voids, and the like, and at the same temperature, Vce of IGBTs with different aging degrees are different. The accuracy of the detection method therefore still needs to be improved.
Disclosure of Invention
Aiming at the defects in the prior art, the IGBT overcurrent early warning system and the IGBT overcurrent early warning method provided by the invention can be used for early warning the IGBT based on temperature change and aging influence, so that the early warning reliability is effectively improved.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
the IGBT overcurrent early warning system comprises a driving module, an IGBT with the same specification as a target IGBT, a temperature acquisition module, a voltage acquisition module and a signal processing and control module; the driving module is respectively connected with the IGBT and the signal processing and control module which have the same specification with the target IGBT, and the IGBT which has the same specification with the target IGBT is connected with the temperature acquisition module and the voltage acquisition module; the temperature acquisition module and the voltage acquisition module are respectively connected with the signal processing and control module;
the driving module is used for providing driving signals for the IGBTs with the same specification as the target IGBT;
the temperature acquisition module is used for acquiring temperature data of the IGBT with the same specification as the target IGBT when the IGBT works;
the voltage acquisition module is used for acquiring voltage data between a collector and an emitter when the IGBT with the same specification as the target IGBT works;
the signal processing and control module is used for controlling the opening and closing of the driving module and performing the following operations:
①, converting the acquired temperature data and voltage data into digital signals, and acquiring the real-time temperature of the IGBT and the corresponding voltage value thereof according to the digital signals;
②, establishing a database according to the real-time temperature and voltage values of the IGBTs with the same specification as the target IGBT;
③, voltage value matching is carried out in the database according to the current temperature value of the target IGBT, and the early warning threshold value of the target IGBT in the a time length is obtained by multiplying the voltage value obtained by matching by the early warning coefficient;
④, judging whether the target IGBT reaches the early warning threshold value within the time length a, if so, early warning is carried out, otherwise, operation ⑤ is carried out;
⑤, judging whether to continue the early warning, if so, returning to operation ③, otherwise, stopping the work of the driving module and ending the early warning.
Further, the early warning coefficient is 1.2.
Further, the driving module includes a driving chip with a model number of 1ED020I12FA2, an OUT pin of the driving chip with the model number of 1ED020I12FA2 is a driving signal output pin, and an IN + pin is a control signal input pin.
Furthermore, an electric bridge push-pull circuit is arranged between the driving signal output pin and the IGBT with the same specification as the target IGBT.
Further, the voltage acquisition module comprises a chip with the model number of IR25750LTRPBF, and is used for acquiring voltage data between a collector and an emitter of the IGBT with the same specification as the target IGBT; the VSAM pin of the chip with the model IR25750LTRPBF is the signal output pin of the voltage acquisition module.
Further, the temperature acquisition module comprises a platinum resistance sensor and a MAX31865 isolation temperature acquisition unit which are connected, and the output end of the MAX31865 isolation temperature acquisition unit is a signal output end of the temperature acquisition module.
The IGBT overcurrent early warning method comprises the following steps:
s1, collecting temperature data of a target IGBT and an IGBT with the same specification as the target IGBT when working and voltage data between a collector and an emitter;
s2, converting the acquired temperature data and voltage data into digital signals, and acquiring the real-time temperature and the corresponding voltage value of the IGBT with the same specification as the target IGBT according to the digital signals;
s3, establishing a database according to the real-time temperature and voltage values of the IGBTs with the same specification as the target IGBT;
s4, voltage value matching is carried out in a database according to the current temperature value of the target IGBT, if the matching is successful, the step S5 is carried out, and if not, early warning is carried out;
s5, multiplying the voltage value obtained by matching by an early warning coefficient to obtain an early warning threshold value of the target IGBT within the time length a;
s6, judging whether the target IGBT reaches the early warning threshold value within the time length a, if so, early warning is carried out, otherwise, the step S7 is carried out;
and S7, judging whether to continue the early warning, if so, returning to the step S4, and if not, stopping the work of the driving module and ending the early warning.
Further, the specific method of step S4 includes the following sub-steps:
s4-1, setting a deviation range b, wherein b is larger than 0, and finding voltage values at different moments under the temperature value in a database according to the current temperature value of the target IGBT to obtain a sub-database;
s4-2, judging whether a voltage value between V and V + b exists in the sub database, if so, entering a step S4-3, and if not, carrying out early warning;
s4-3, the voltage value in the sub-database which is between V and V + b and closest to the voltage value V is used as the matching result and the step S5 is proceeded.
The invention has the beneficial effects that: according to the invention, the influence of temperature and aging on the IGBT is combined, and a new early warning threshold value determining method is established, so that the early warning threshold value of the IGBT at any temperature at any moment is more accurate, the problem of low reliability of the existing early warning method is solved, and the reliability of the IGBT in working can be increased.
Drawings
FIG. 1 is a block diagram of the system of the present invention;
FIG. 2 is a circuit diagram of a driving module;
fig. 3 is a circuit schematic diagram of the IGBT and the voltage acquisition module.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown in fig. 1, the IGBT overcurrent early warning system includes a driving module, an IGBT with the same specification as a target IGBT, a temperature acquisition module, a voltage acquisition module, and a signal processing and control module; the driving module is respectively connected with the IGBT and the signal processing and control module which have the same specification with the target IGBT, and the IGBT which has the same specification with the target IGBT is connected with the temperature acquisition module and the voltage acquisition module; the temperature acquisition module and the voltage acquisition module are respectively connected with the signal processing and control module;
the driving module is used for providing driving signals for the IGBTs with the same specification as the target IGBT;
the temperature acquisition module is used for acquiring temperature data of the IGBT with the same specification as the target IGBT when the IGBT works;
the voltage acquisition module is used for acquiring voltage data between a collector and an emitter when the IGBT with the same specification as the target IGBT works;
the signal processing and control module is used for controlling the opening and closing of the driving module and performing the following operations:
①, converting the acquired temperature data and voltage data into digital signals, and acquiring real-time temperature and voltage values of the IGBT according to the digital signals;
②, establishing a database according to the real-time temperature and voltage values of the IGBTs with the same specification as the target IGBT, and acquiring the current temperature value and the corresponding voltage value of the target IGBT;
③, voltage value matching is carried out in the database according to the current temperature value of the target IGBT, and the early warning threshold value of the target IGBT in the a time length is obtained by multiplying the voltage value obtained by matching by the early warning coefficient;
④, judging whether the target IGBT reaches the early warning threshold value within the time length a, if so, early warning is carried out, otherwise, operation ⑤ is carried out;
⑤, judging whether to continue the early warning, if so, returning to operation ③, otherwise, stopping the work of the driving module and ending the early warning.
The early warning coefficient is 1.2.
As shown IN fig. 2, the driving module includes a driving chip with a model number of 1ED020I12FA2, an OUT pin of the driving chip with a model number of 1ED020I12FA2 is a driving signal output pin, and an IN + pin is a control signal input pin. And an electric bridge push-pull circuit is also arranged between the driving signal output pin and the IGBT with the same specification as the target IGBT.
As shown in fig. 3, the voltage acquisition module includes a chip with model number IR25750LTRPBF, and is configured to acquire voltage data between the collector and the emitter of an IGBT with the same specification as the target IGBT; the VSAM pin of the chip with the model IR25750LTRPBF is the signal output pin of the voltage acquisition module.
The temperature acquisition module comprises a platinum resistance sensor and a MAX31865 isolation temperature acquisition unit which are connected, and the output end of the MAX31865 isolation temperature acquisition unit is a signal output end of the temperature acquisition module.
The IGBT overcurrent early warning method comprises the following steps:
s1, collecting temperature data of a target IGBT and an IGBT with the same specification as the target IGBT when working and voltage data between a collector and an emitter;
s2, converting the acquired temperature data and voltage data into digital signals, and acquiring the real-time temperature and the corresponding voltage value of the IGBT with the same specification as the target IGBT according to the digital signals;
s3, establishing a database according to the real-time temperature and voltage values of the IGBTs with the same specification as the target IGBT;
s4, voltage value matching is carried out in a database according to the current temperature value of the target IGBT, if the matching is successful, the step S5 is carried out, and if not, early warning is carried out;
s5, multiplying the voltage value obtained by matching by an early warning coefficient to obtain an early warning threshold value of the target IGBT within the time length a;
s6, judging whether the target IGBT reaches the early warning threshold value within the time length a, if so, early warning is carried out, otherwise, the step S7 is carried out;
and S7, judging whether to continue the early warning, if so, returning to the step S4, and if not, stopping the work of the driving module and ending the early warning.
The specific method of step S4 includes the following substeps:
s4-1, setting a deviation range b, wherein b is larger than 0, and finding voltage values at different moments under the temperature value in a database according to the current temperature value of the target IGBT to obtain a sub-database;
s4-2, judging whether a voltage value between V and V + b exists in the sub database, if so, entering a step S4-3, and if not, carrying out early warning;
s4-3, the voltage value in the sub-database which is between V and V + b and closest to the voltage value V is used as the matching result and the step S5 is proceeded.
In one embodiment of the present invention, as shown in fig. 2, INT is an input of the driving module, and is controlled by the signal processing and controlling module; OUT is the output of the driving module and provides a driving signal for the IGBT circuit; QA01 is used for isolating power supply (isolating strong and weak current, stabilizing voltage, protecting circuit, etc.) and providing power supply support for the output of drive module. The 1ED020I12FA2 is a driving chip and outputs a corresponding digital signal according to a signal input by INT; the T1, the T2, the T3 and the T4 form a bridge push-pull circuit, the output of the driving chip is used for controlling the signals selected by the bridge to carry out push-pull output, and the push-pull output capability of the signals can be improved by sampling two groups of bridges; r1 pull-down resistor, when INT input is low level, carry on the pull-down input; r2, R3 can further pull down the voltage when the output of the driving chip is low level, thereby preventing the bridge circuit from misidentifying the low level input signal; the rest of the capacitor can eliminate the noise between the power supply and the ground so as to achieve the purpose of filtering.
As shown in fig. 3, OUT is connected to the output of the driving module; q1 is IGBT; r5 is a high-precision shunt resistor which can be used for collecting current; the IR25750LTRPBF is a voltage acquisition chip used for acquiring Vce of the IGBT, and the VSAM is the output of the chip; the INA240A1EDRQ1 can be used for collecting Ic of the IGBT and outputting through the ISAM; PGND is the ground terminal of the power supply corresponding to 400V; r6 is a high-power resistor, bears the main voltage drop in the circuit, and simulates high-power equipment in a power electronic system; d1 is a diode for preventing IGBT reverse breakdown; l1 is an inductor, so that the current when the IGBT is turned off is slowly released; r7, C19 constitute absorption circuit, reduce IGBT turn-off instant voltage, prevent that IGBT from being broken down when shutting down.
The signal processing and control module can use ADC to convert and process the analog signal (the signal output by the voltage acquisition module), can use STM32 to analyze and calculate the signal (voltage signal and temperature signal), and controls the drive module.
In summary, the invention combines the influence of temperature and aging on the IGBT, and establishes a new early warning threshold value determination method, so that the early warning threshold value of the IGBT at any temperature at any moment is more accurate, the problem of low reliability of the existing early warning method is solved, and the reliability of the IGBT in operation can be increased.
Claims (8)
1. An IGBT overcurrent early warning system is characterized by comprising a driving module, an IGBT with the same specification as a target IGBT, a temperature acquisition module, a voltage acquisition module and a signal processing and control module; the driving module is respectively connected with an IGBT with the same specification as the target IGBT and a signal processing and control module, and the IGBT with the same specification as the target IGBT is connected with the temperature acquisition module and the voltage acquisition module; the temperature acquisition module and the voltage acquisition module are respectively connected with the signal processing and control module;
the driving module is used for providing driving signals for the IGBTs with the same specification as the target IGBT;
the temperature acquisition module is used for acquiring temperature data of the IGBT with the same specification as the target IGBT when the IGBT works;
the voltage acquisition module is used for acquiring voltage data between a collector and an emitter when the IGBT with the same specification as the target IGBT works;
the signal processing and control module is used for controlling the opening and closing of the driving module and performing the following operations:
①, converting the acquired temperature data and voltage data into digital signals, and acquiring the real-time temperature of the IGBT and the corresponding voltage value thereof according to the digital signals;
②, establishing a database according to the real-time temperature and voltage values of the IGBTs with the same specification as the target IGBT;
③, voltage value matching is carried out in the database according to the current temperature value of the target IGBT, and the early warning threshold value of the target IGBT in the a time length is obtained by multiplying the voltage value obtained by matching by the early warning coefficient;
④, judging whether the target IGBT reaches the early warning threshold value within the time length a, if so, early warning is carried out, otherwise, operation ⑤ is carried out;
⑤, judging whether to continue the early warning, if so, returning to operation ③, otherwise, stopping the work of the driving module and ending the early warning.
2. The IGBT over-current pre-warning system according to claim 1, wherein the pre-warning coefficient is 1.2.
3. The IGBT overcurrent early warning system of claim 1, wherein the driving module comprises a driving chip with a model number of 1ED020I12FA2, an OUT pin of the driving chip with the model number of 1ED020I12FA2 is a driving signal output pin, and an IN + pin is a control signal input pin.
4. The IGBT overcurrent early warning system according to claim 3, wherein a bridge push-pull circuit is further arranged between the drive signal output pin and the IGBT with the same specification as the target IGBT.
5. The IGBT overcurrent early warning system according to claim 1, wherein the voltage acquisition module comprises a chip with the model of IR25750LTRPBF for acquiring voltage data between a collector and an emitter of an IGBT with the same specification as a target IGBT; the VSAM pin of the chip with the model of IR25750LTRPBF is a signal output pin of the voltage acquisition module.
6. The IGBT overcurrent early-warning system according to claim 1, wherein the temperature acquisition module comprises a platinum resistance sensor and a MAX31865 isolation temperature acquisition unit which are connected, and an output end of the MAX31865 isolation temperature acquisition unit is a signal output end of the temperature acquisition module.
7. An IGBT overcurrent early warning method is characterized by comprising the following steps:
s1, collecting temperature data of a target IGBT and an IGBT with the same specification as the target IGBT when working and voltage data between a collector and an emitter;
s2, converting the acquired temperature data and voltage data into digital signals, and acquiring the real-time temperature and the corresponding voltage value of the IGBT with the same specification as the target IGBT according to the digital signals;
s3, establishing a database according to the real-time temperature and voltage values of the IGBTs with the same specification as the target IGBT;
s4, voltage value matching is carried out in a database according to the current temperature value of the target IGBT, if the matching is successful, the step S5 is carried out, and if not, early warning is carried out;
s5, multiplying the voltage value obtained by matching by an early warning coefficient to obtain an early warning threshold value of the target IGBT within the time length a;
s6, judging whether the target IGBT reaches the early warning threshold value within the time length a, if so, early warning is carried out, otherwise, the step S7 is carried out;
and S7, judging whether to continue the early warning, if so, returning to the step S4, and if not, stopping the work of the driving module and ending the early warning.
8. The IGBT overcurrent early warning method according to claim 7, wherein the specific method of the step S4 comprises the following substeps:
s4-1, setting a deviation range b, wherein b is larger than 0, and finding voltage values at different moments under the temperature value in a database according to the current temperature value of the target IGBT to obtain a sub-database;
s4-2, judging whether a voltage value between V and V + b exists in the sub database, if so, entering a step S4-3, and if not, carrying out early warning;
s4-3, the voltage value in the sub-database which is between V and V + b and closest to the voltage value V is used as the matching result and the step S5 is proceeded.
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| CN201911381670.1A CN111090031A (en) | 2019-12-27 | 2019-12-27 | IGBT overcurrent early warning system and method |
| CN202011312861.5A CN112285522B (en) | 2019-12-27 | 2020-11-20 | IGBT overcurrent early warning system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111999629A (en) * | 2020-08-24 | 2020-11-27 | 阳光电源股份有限公司 | IGBT module state monitoring method and device |
| CN112485632A (en) * | 2020-12-09 | 2021-03-12 | 电子科技大学 | IGBT health assessment system and method based on volt-ampere relation change |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
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| CN114167147A (en) * | 2021-12-10 | 2022-03-11 | 电子科技大学 | Reusable power device UIS test system and method |
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| CN101593968B (en) * | 2008-05-30 | 2012-03-07 | 比亚迪股份有限公司 | Overcurrent protection method and the overcurrent protector of isolated gate bipolar transistor (IGBT) |
| CN205027812U (en) * | 2015-10-15 | 2016-02-10 | 湘电莱特电气有限公司 | IGBT overflows excess temperature alarm circuit |
| CN107094007B (en) * | 2017-03-08 | 2020-07-21 | 全球能源互联网研究院有限公司 | IGBT overcurrent protection method and device |
| CN108011622B (en) * | 2018-01-31 | 2021-04-09 | 广东美的制冷设备有限公司 | IGBT overcurrent protection method and circuit and electric equipment |
| CN108919085A (en) * | 2018-10-17 | 2018-11-30 | 北京交通大学 | IGBT burn in test circuit and method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111999629A (en) * | 2020-08-24 | 2020-11-27 | 阳光电源股份有限公司 | IGBT module state monitoring method and device |
| CN112485632A (en) * | 2020-12-09 | 2021-03-12 | 电子科技大学 | IGBT health assessment system and method based on volt-ampere relation change |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
| CN113253088B (en) * | 2021-06-25 | 2021-09-28 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
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| CN112285522A (en) | 2021-01-29 |
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