CN205027812U - IGBT overflows excess temperature alarm circuit - Google Patents
IGBT overflows excess temperature alarm circuit Download PDFInfo
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- CN205027812U CN205027812U CN201520795384.0U CN201520795384U CN205027812U CN 205027812 U CN205027812 U CN 205027812U CN 201520795384 U CN201520795384 U CN 201520795384U CN 205027812 U CN205027812 U CN 205027812U
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Abstract
The utility model relates to a IGBT overflows excess temperature alarm circuit, it is including collection emitter -base bandgap grading pressure drop acquisition circuit, the temperature signal acquisition circuit, add circuit is put to fortune, voltage amplifier circuit is put to fortune, voltage comparison circuit, temperature that the IGBT collection emitter -base bandgap grading pressure drop voltage and the temperature signal acquisition circuit that detect collection emitter -base bandgap grading pressure drop acquisition circuit detected corresponds voltage and all carries and put add circuit and fortune for fortune and put the non inverting input that the common fortune of amplifier circuit put and hold, also carry the IGBT's that detects temperature signal simultaneously and put add circuit for fortune and put the non inverting input end that the common fortune of amplifier circuit was put with fortune, during the voltage of the setting value of the inverting input terminal voltage that the fortune that is higher than voltage comparison circuit through the magnitude of voltage after fortune is put voltage amplifier circuit and is enlargied was put, output voltage is put to voltage comparison circuit's fortune is changeed low by the height, output fault -signal. The utility model discloses when detecting the pressure drop of IGBT collection emitter -base bandgap grading, add the temperature rise factor, make IGBT work safer.
Description
Technical field
The utility model relates to a kind of IGBT excess-current excess-temperature alarm circuit.
Background technology
Existing IGBT overcurrent alarm circuit is generally determine element whether overcurrent, because IGBT collection emitter voltage drop is directly proportional to its collector current, once collection emitter voltage drop exceedes set value namely realize overcurrent warning by detecting IGBT collection emitter voltage drop.But when IGBT occurs that temperature raises, the load-bearing capacity of IGBT can decline to some extent, thus only by overcurrent report to the police ensure the normal operation of IGBT time inadequate.
Utility model content
The purpose of this utility model is to overcome above defect, provides a kind of IGBT excess-current excess-temperature alarm circuit of work safety and reliability.
The technical solution of the utility model is, a kind of IGBT excess-current excess-temperature alarm circuit, it comprises collection emitter voltage drop Acquisition Circuit, also comprise temperature signal collection circuit, amplifier adding circuit, amplifier voltage amplifier circuit, voltage comparator circuit, the temperature corresponding voltage that the IGBT collection emitter voltage drop voltage that collection emitter voltage drop Acquisition Circuit is detected and temperature signal collection circuit detect all flows to the in-phase input end of amplifier adding circuit and the public amplifier of amplifier amplifying circuit, the temperature signal of the IGBT detected also is flowed to the in-phase input end of amplifier adding circuit and the public amplifier of amplifier amplifying circuit simultaneously, amplifier adding circuit and the public amplifier of amplifier amplifying circuit export the voltage amplified through amplifier voltage amplifier circuit, be transported to the amplifier inverting input of voltage comparator circuit, the in-phase input end of the amplifier of voltage comparator circuit connects the voltage of setting value, the voltage that the temperature corresponding voltage that the IGBT collection emitter voltage drop voltage detected when collection emitter voltage drop Acquisition Circuit and temperature signal collection circuit detect is added, during the voltage of magnitude of voltage higher than the setting value of the anti-phase input terminal voltage of the amplifier of voltage comparator circuit after amplifier voltage amplifier circuit amplifies, the amplifier output voltage of voltage comparator circuit turns low by height, export fault-signal.
Technique effect of the present utility model is, after the voltage compare of the voltage that the temperature corresponding voltage that the IGBT collection emitter voltage drop voltage detect collection emitter voltage drop Acquisition Circuit and temperature signal collection circuit detect is added and setting value, thus while detection IGBT collection emitter voltage drop, temperature rise factor is added, IGBT is worked safer.
Accompanying drawing explanation
Accompanying drawing 1 is the circuit diagram of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
With reference to accompanying drawing, a kind of IGBT excess-current excess-temperature alarm circuit, comprise collection emitter voltage drop Acquisition Circuit, temperature signal collection circuit, amplifier adding circuit, amplifier voltage amplifier circuit and amplifier voltage comparator circuit, described collection emitter voltage drop Acquisition Circuit comprises diode D1, resistance R11, R12, resistance R3, diode D1 negative pole is connected with IGBT collector, positive pole receives in-phase input end 3 pin of amplifier U1-A successively by resistance R11 and resistance R3, 2 pin of 2 pin connecting resistance R11 of resistance R12 and 1 pin of resistance R3, the 1 pin ground connection of resistance R12, the IGBT collection emitter voltage drop signal detected is through resistance R11, resistance R12 dividing potential drop gives amplifier U1-A in-phase input end 3 pin again, change resistance R11, resistance R12 resistance value ratio, just can change the alarm current of IGBT.Described temperature signal collection circuit comprises resistance R5, resistance R10, power Vcc, thermal resistance U2, thermal resistance U2 should be close to IGBT and install, 2 pin of resistance R10 connect power Vcc, 1 pin of resistance R10 is connected with 1 pin of thermal resistance U2, the 2 pin ground connection of thermal resistance U2,1 pin of resistance R5 is connected with 1 pin of 1 pin of resistance R10 and thermal resistance U2, when IGBT temperature changes, 3 pin of amplifier U1-A can obtain the voltage of a change, and the resistance changing resistance R10 can change and change by IGBT temperature the voltage amplitude caused.Described amplifier adding circuit comprises resistance R5, resistance R3, and 2 pin of resistance R5 are connected with 2 pin of 3 pin of amplifier U1-A and resistance R3.Described amplifier voltage amplifier circuit comprises resistance R2, resistance R1, and resistance R2 is connected across between 2 pin of U1-A and 1 pin, the 1 pin ground connection of resistance R1, and 2 pin of resistance R1 connect 2 pin of amplifier U1-A.Described amplifier voltage comparator circuit comprises resistance R6, resistance R7, resistance R8, resistance R9, amplifier U1-B, 1 pin of resistance R9 connects 1 pin of amplifier U1-A, 2 pin of resistance R9 connect 6 pin of amplifier U1-B, 1 pin of resistance R8 connects power Vcc, 1 pin of 2 pin of resistance R8 and 1 pin of resistance R6 and resistance R7,2 pin of resistance R6 are connected with 5 pin of amplifier U1-B, the 2 pin ground connection of resistance R7, and fault-signal is exported by 7 pin of amplifier U1-B.
The voltage that the temperature corresponding voltage that the IGBT collection emitter voltage drop voltage detect IGBT collection emitter voltage drop Acquisition Circuit and temperature signal collection circuit detect is added exports at 1 pin of amplifier U1-A.Through the voltage that amplifier voltage amplifier circuit amplifies, the amplifier voltage comparator circuit be made up of amplifier U1-B and related elements compares, when the 5 pin voltages of amplifier U1-B are greater than the 6 pin voltages of amplifier U1-B, 7 pin of side U1-B become low level, like this, by changing resistance R11, resistance R12 resistance value ratio, change the resistance of resistance R10, while detection IGBT collection emitter voltage drop, temperature rise factor can be added, changes when IGBT reports to the police because of overcurrent and excess temperature factor ratio separately.
Be more than a kind of embodiment of the present utility model, a preferred demonstration example.The scope of the utility model application request protection has more than and is limited to described embodiment.All technical schemes with the present embodiment equivalence, all belong to protection domain of the present utility model.
Claims (1)
1. an IGBT excess-current excess-temperature alarm circuit, it comprises collection emitter voltage drop Acquisition Circuit, it is characterized in that, also comprise temperature signal collection circuit, amplifier adding circuit, amplifier voltage amplifier circuit, voltage comparator circuit, the temperature corresponding voltage that the IGBT collection emitter voltage drop voltage that collection emitter voltage drop Acquisition Circuit is detected and temperature signal collection circuit detect all flows to the in-phase input end of amplifier adding circuit and the public amplifier of amplifier amplifying circuit, the temperature signal of the IGBT detected also is flowed to the in-phase input end of amplifier adding circuit and the public amplifier of amplifier amplifying circuit simultaneously, amplifier adding circuit and the public amplifier of amplifier amplifying circuit export the voltage amplified through amplifier voltage amplifier circuit, be transported to the amplifier inverting input of voltage comparator circuit, the in-phase input end of the amplifier of voltage comparator circuit connects the voltage of setting value, the voltage that the temperature corresponding voltage that the IGBT collection emitter voltage drop voltage detected when collection emitter voltage drop Acquisition Circuit and temperature signal collection circuit detect is added, during the voltage of magnitude of voltage higher than the setting value of the anti-phase input terminal voltage of the amplifier of voltage comparator circuit after amplifier voltage amplifier circuit amplifies, the amplifier output voltage of voltage comparator circuit turns low by height, export fault-signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520795384.0U CN205027812U (en) | 2015-10-15 | 2015-10-15 | IGBT overflows excess temperature alarm circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520795384.0U CN205027812U (en) | 2015-10-15 | 2015-10-15 | IGBT overflows excess temperature alarm circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205027812U true CN205027812U (en) | 2016-02-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520795384.0U Active CN205027812U (en) | 2015-10-15 | 2015-10-15 | IGBT overflows excess temperature alarm circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN205027812U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526363A (en) * | 2016-11-01 | 2017-03-22 | 株洲中车时代电气股份有限公司 | Converter power component online monitoring system |
| CN112285522A (en) * | 2019-12-27 | 2021-01-29 | 电子科技大学 | IGBT overcurrent early warning system and method |
-
2015
- 2015-10-15 CN CN201520795384.0U patent/CN205027812U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526363A (en) * | 2016-11-01 | 2017-03-22 | 株洲中车时代电气股份有限公司 | Converter power component online monitoring system |
| CN112285522A (en) * | 2019-12-27 | 2021-01-29 | 电子科技大学 | IGBT overcurrent early warning system and method |
| CN112285522B (en) * | 2019-12-27 | 2021-10-22 | 电子科技大学 | IGBT overcurrent early warning system and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200527 Address after: 411101 Hunan Province, Xiangtan city Yuetang xiashesi Street No. 302 Patentee after: Xiangtan Liyuan Electric Tooling Co.,Ltd. Address before: 411101 Hunan Province, Xiangtan city Yuetang District College Road No. 38 Innovation Park Patentee before: XEMC LIGHT ELECTRIC Co.,Ltd. |