CN102377326B - Insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and protection module thereof - Google Patents
Insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and protection module thereof Download PDFInfo
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Abstract
The invention relates to an insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and a protection module thereof, which are used for a frequency converter, an inverter and a switching power supply. The protection module comprises a bus current detection unit, a threshold value comparison unit, a low-side control unit and a fault feedback unit, wherein the bus current detection unit is used for detecting bus current and converting a detected current signal into a voltage signal; the threshold value comparison unit is used for comparing the voltage signal with a set reference voltage threshold value; the low-side control unit is used for regulating the positive gate pole driving voltage of a low-side IGBT to second voltage which is lower than the positive gate pole driving voltage of the IGBT which works normally when the voltage signal is greater than the reference voltage threshold value; and the fault feedback unit is used for feeding a fault signal back to a micro control unit (MCU) when the voltage signal is greater than the reference voltage threshold value and the positive gate pole driving voltage of the low-side IGBT is regulated to the second voltage, and the MCU stops outputting a gate pole driving signal according to the fault signal. By the technical scheme provided by the invention, reliable short-circuit protection can be realized, and cost is low.
Description
Technical field
The present invention relates to based on IGBT pipe (Insulated Gate Bipolar Transistor; insulated gate bipolar crystal oscillator pipe) drive circuit of bridge switch topology; more particularly, relate to a kind of drive circuit and protection module thereof based on IGBT pipe bridge formula switch topology for frequency converter, inverter, Switching Power Supply.
Background technology
IGBT tube device is due to its low conduction loss, little average driving power and switching characteristic fast, current general being applied in the equipment such as frequency converter, inverter, Switching Power Supply, IGBT pipe, as the Primary Component of bridge switch topology, completes power transfer.
Fig. 1 be a kind of IGBT of usining tube device Q1 the most common on market, Q2, Q3, Q4, Q5, Q6 as the bridge switch topological circuit of switch element, the driving method of its IGBT pipe has several as follows:
The first is exactly to drive optocoupler to drive IGBT pipe with the special use with the collector emitter voltage Vce measuring ability (hereinafter to be referred as Vce voltage detecting function) of IGBT pipe not, these drive optocoupler to comprise: ACPL-P314, TLP701, HCPL-3120, ACPL-T350 etc., Fig. 2 is the drive circuit based on TLP701, when driving IGBT pipe with such optocoupler, it is the Q1 isolated drive circuit 1 in Fig. 1, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6 all adopts the drive circuit shown in Fig. 2, adopting and driving in this way the feature of IGBT pipe is that circuit is simple, but do not have the effect of shoot through protection between output short-circuit and IGBT pipe upper and lower bridge arm.
The second is to use the special use with Vce voltage detecting function to drive optocoupler to drive IGBT pipe, these optocouplers comprise: ACPL-331J, HCPL-316J, PC929 etc., when driving IGBT pipe with such optocoupler, it is the Q1 isolated drive circuit 1 in Fig. 1, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6, in this No. 6 drive circuit, have at least 3 tunnels need to adopt such optocoupler, drive in this way IGBT pipe to play and detect the short-circuit condition of IGBT pipe and the effect of protection IGBT pipe, but circuit is complicated, add the cost of this driving optocoupler own just very high, cause the high expensive of whole circuit.
Summary of the invention
The technical problem to be solved in the present invention is; the defect that foregoing circuit cost for prior art is high, can not shield to output short-circuit and the straight-through short circuit of upper and lower bridge arm; a kind of protection module of the drive circuit based on IGBT bridge switch topology is provided; can realize reliable short-circuit protection, and cost is low.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of protection module of the drive circuit based on IGBT bridge switch topology, this drive circuit is for driving IGBT pipe according to the gate electrode drive signals of MCU output, and described protection module comprises:
Bus current detecting unit, is converted into voltage signal for detection of bus current and by detected current signal;
Threshold value comparing unit, connects described bus current detecting unit, for the reference voltage threshold value of described voltage signal and setting is compared;
Lower bridge control unit, connect described threshold value comparing unit, for when described voltage signal is greater than reference voltage threshold value, by the positive gate driving voltage voltage stabilizing of lower bridge IGBT pipe, to second voltage, described second voltage is less than described lower bridge IGBT and manages the positive gate driving voltage while normally working;
Fault feedback unit, connect described threshold value comparing unit, for being greater than reference voltage threshold value at described voltage signal, and the positive gate driving voltage voltage stabilizing of described lower bridge IGBT pipe is to second voltage, to MCU feedback fault-signal, and MCU stops exporting gate electrode drive signals according to described fault-signal.
In protection module of the present invention, described lower bridge control unit comprises the first optocoupler, the first diode, the second diode, the 3rd diode, the first voltage stabilizing didoe, the second voltage stabilizing didoe and the 3rd voltage stabilizing didoe, wherein, the first level led positive pole of described the first optocoupler connects the first output of described threshold value comparing unit, the first level led negative pole of described the first optocoupler connects the second output of described threshold value comparing unit, the emitter of the phototriode of described the first optocoupler connects negative busbar, the collector electrode of the phototriode of described the first optocoupler connects respectively the positive pole of the first voltage stabilizing didoe, the positive pole of the positive pole of the second voltage stabilizing didoe and the 3rd voltage stabilizing didoe, the negative pole of the first voltage stabilizing didoe, the negative pole of the negative pole of the second voltage stabilizing didoe and the 3rd voltage stabilizing didoe connects respectively the negative pole of the first diode, the negative pole of the negative pole of the second diode and the 3rd diode, the positive pole of the first diode, the gate pole of bridge IGBT pipe under the positive pole difference Jie San road of the positive pole of the second diode and the 3rd diode.
In protection module of the present invention, described lower bridge control unit also comprises the first triode, the second triode and the 3rd triode, wherein, the emitter of the first triode, the emitter of the emitter of the second triode and the 3rd triode connects respectively the positive pole of the first voltage stabilizing didoe, the positive pole of the positive pole of the second voltage stabilizing didoe and the 3rd voltage stabilizing didoe, the base stage of the first triode, the base stage of the base stage of the second triode and the 3rd triode connects respectively the collector electrode of the phototriode of described the first optocoupler, the collector electrode of the first triode, the collector electrode of the collector electrode of the second triode and the 3rd triode connects respectively negative busbar.
In protection module of the present invention, described lower bridge control unit comprises the second optocoupler, the 4th diode, the 5th diode, the 6th diode and the 4th voltage stabilizing didoe, wherein, the first level led positive pole of described the second optocoupler connects the first output of described threshold value comparing unit, the first level led negative pole of described the second optocoupler connects the second output of described threshold value comparing unit, the emitter of the phototriode of described the second optocoupler connects negative busbar, the collector electrode of the phototriode of described the second optocoupler connects the positive pole of the 4th voltage stabilizing didoe, the negative pole of the 4th voltage stabilizing didoe connects respectively the negative pole of the 4th diode, the negative pole of the negative pole of the 5th diode and the 6th diode, the positive pole of the 4th diode, the gate pole of bridge IGBT pipe under the positive pole difference Jie San road of the positive pole of the 5th diode and the 6th diode.
In protection module of the present invention; described lower bridge control unit also comprises the 4th triode; the emitter of described the 4th triode connects the positive pole of the 4th voltage stabilizing didoe; the base stage of described the 4th triode connects the collector electrode of the phototriode of described the second optocoupler, and the collector electrode of described the 4th triode connects negative busbar.
The present invention also constructs a kind of drive circuit based on IGBT bridge switch topology, and for driving IGBT pipe according to the gate electrode drive signals of MCU output, described drive circuit comprises above-described protection module.
The present invention also constructs a kind of IGBT bridge switch topology, comprises MCU, and for drive the drive circuit of IGBT pipe according to the gate electrode drive signals of MCU output, described drive circuit comprises above-described protection module.
The present invention also constructs a kind of frequency converter, comprises above-described IGBT bridge switch topology.
The present invention also constructs a kind of inverter, comprises above-described IGBT bridge switch topology.
The present invention also constructs a kind of Switching Power Supply, comprises above-described IGBT bridge switch topology.
Implement technical scheme of the present invention; when there is output short-circuit or IGBT pipe upper and lower bridge arm shoot through; by lower bridge control unit by the positive gate driving voltage voltage stabilizing of lower bridge IGBT pipe to second voltage; positive gate driving voltage when second voltage is less than the normal work of IGBT pipe; then to MCU feedback fault-signal, therefore, this scheme can realize reliable short-circuit protection; and due to without adopting expensive driving chip, so cost can reduce greatly.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is a kind of circuit diagram based on IGBT bridge switch topology of prior art;
Fig. 2 is a kind of Q1 isolated drive circuit circuit diagram in Fig. 1;
Fig. 3 is the building-block of logic of protection module embodiment mono-that the present invention is based on the drive circuit of IGBT bridge switch topology;
Fig. 4 is the circuit diagram of IGBT bridge switch topology embodiment mono-of the present invention;
Fig. 5 is the circuit diagram of IGBT bridge switch topology embodiment bis-of the present invention.
Embodiment
Fig. 3 is the building-block of logic of the protection module embodiment mono-of the drive circuit based on IGBT bridge switch topology of the present invention; in conjunction with Fig. 1, the Q1 isolated drive circuit 1 in drive circuit 00, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6 drive IGBT pipe Q1, Q3, Q5, Q2, Q4, Q6 according to the gate electrode drive signals of MCU output respectively.Should be noted that, bridge switch topology in all embodiment of the present invention all be take 6 IGBT pipe output three-phase inversion voltages and is described as example, but it is 6 that the present invention does not limit the quantity of IGBT pipe, also can be 4, at IGBT pipe, be 4 o'clock, what this bridge switch topology was exported is single-phase inversion voltage.This protection module comprises bus current detecting unit 8, threshold value comparing unit 9, fault feedback unit 10 and lower bridge control unit 11, illustrates unit below:
Bus current detecting unit 8, is converted into voltage signal for detection of bus current and by detected current signal;
Threshold value comparing unit 9, connects described bus current detecting unit 8, for the reference voltage threshold value of described voltage signal and setting is compared;
Lower bridge control unit 11, connect described threshold value comparing unit 9, for when described voltage signal is greater than reference voltage threshold value, by the positive gate driving voltage voltage stabilizing of lower bridge IGBT pipe, to second voltage, described second voltage is less than described lower bridge IGBT and manages the positive gate driving voltage while normally working;
In the circuit diagram of the IGBT bridge switch topology embodiment mono-of the present invention shown in Fig. 4, this IGBT bridge switch topology comprises that MCU 7, drive circuit and six IGBT manage Q1, Q2, Q3, Q4, Q5, Q6, stress drive circuit below, drive circuit comprises Q1 isolated drive circuit 1, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6, bus current detecting unit 8, threshold value comparing unit 9, fault feedback unit 10 and lower bridge control unit 11.Wherein, Q1 isolated drive circuit 1, Q3 isolated drive circuit 3, Q5 isolated drive circuit 5, Q2 isolated drive circuit 2, Q4 isolated drive circuit 4, Q6 isolated drive circuit 6 are controlled six IGBT pipes Q1, Q2, Q3, Q4, Q5, Q6 according to 6 gate electrode drive signals of MCU 7 outputs respectively; Bus current detecting unit 8 is converted into voltage signal for detection of bus current and by detected current signal, as, sampling resistor is connected on to positive bus-bar P above or sampling resistor is connected on to negative busbar N above, then detect the voltage of sampling resistor; Threshold value comparing unit 9 is for the reference voltage threshold value of described voltage signal and setting is compared, and this threshold value comparing unit can be comparator or with the combinational circuit of three end adjustable shunt reference sources; Lower bridge control unit 11 is for when described voltage signal is greater than reference voltage threshold value, and by the positive gate driving voltage voltage stabilizing of lower bridge IGBT pipe, to second voltage, described second voltage is less than positive gate driving voltage when IGBT pipe is normal works; Fault feedback unit 10 is for being greater than reference voltage threshold value at described voltage signal, and the positive gate driving voltage voltage stabilizing of described lower bridge IGBT pipe is to second voltage, feed back fault-signal, and MCU stops exporting gate electrode drive signals according to described fault-signal to MCU.
The following describes the circuit of lower bridge control unit 11, in Fig. 4, the first output of the first level led anodal connect threshold comparing unit 9 of optocoupler OP1, the second output of the first level led negative pole connect threshold comparing unit 9 of optocoupler OP1, the emitter of the phototriode of optocoupler OP1 connects negative busbar N, the collector electrode of the phototriode of optocoupler OP1 connects respectively the base stage of triode Q7, the base stage of the base stage of triode Q8 and triode Q9, the collector electrode of triode Q7, the collector electrode of the collector electrode of triode Q8 and triode Q9 meets respectively negative busbar N, the emitter of triode Q7, the emitter of the emitter of triode Q8 and triode Q9 connects respectively the positive pole of voltage stabilizing didoe Z1, the positive pole of the positive pole of voltage stabilizing didoe Z2 and voltage stabilizing didoe Z3, the negative pole of voltage stabilizing didoe Z1, the negative pole of the negative pole of voltage stabilizing didoe Z2 and voltage stabilizing didoe Z3 connects respectively the negative pole of diode D1, the negative pole of the negative pole of diode D2 and diode D3, the positive pole of diode D1, bridge IGBT pipe Q2 under the positive pole difference Jie San road of the positive pole of diode D2 and diode D3, Q4, the gate pole of Q6, capacitor C 1 is connected between the collector electrode of phototriode of optocoupler OP1 and the emitter of the phototriode of optocoupler OP1.
Below in conjunction with Fig. 4, illustrate the operation principle of this IGBT bridge switch topology:
If there is output short circuit or the straight-through situation of upper and lower bridge arm, the electric current flowing through DC bus (flowing to N from P) sharply increases, bus current detecting unit 8 by this fault current detection out, and carry out after a certain proportion of amplification processing, convert it into failure voltage signal proportional to fault current, send into threshold value comparing unit 9.
Threshold value comparing unit 9 comprises a pre-set reference voltage threshold value, the bus current value of the corresponding required protection of this reference voltage threshold value.Once the failure voltage signal of bringing from bus current detecting unit 8 is greater than reference voltage threshold value, threshold value comparing unit 9 is exported two paths of signals at once.Wherein, a road is used for driving lower bridge control unit 11, and an other road is used for driving malfunction feedback unit 10.
Lower bridge control unit 11 is core function circuitry of the present invention, acting as of its each several part element: optocoupler OP1 is used for the driving signal of receive threshold comparing unit 9, and control triode Q7, Q8, Q9 conducting simultaneously, in order to guarantee the response speed of optocoupler OP1, can adopt rapid light coupling device.Capacitor C 1 is for filtering noise information interference signal.Triode Q7, Q8, Q9 utilize the positive gate driving voltage of lower bridge IGBT pipe Q2, Q4, Q6 and conducting has any IGBT pipe when negative gate drive voltage among a certain moment Q2, Q4, Q6, therewith IGBT manage connected triode just can not conducting.Voltage stabilizing didoe Z1, Z2, Z3 be used for setting lower bridge IGBT pipe Q2, Q4, Q6 nonserviceable under the second voltage of (now the gate electrode drive signals of MCU 7 is not cancelled).By adjusting the voltage stabilizing value (representing with Vz) of voltage stabilizing didoe Z1, Z2, Z3, just can make the positive gate driving voltage of the lower bridge IGBT pipe in overcurrent or short trouble state drop to the level (being second voltage) that approximates Vz.The voltage stabilizing value that it should be noted that voltage stabilizing didoe Z1, Z2, Z3 must be less than positive gate driving voltage when IGBT pipe is normal works.Diode D1, D2, D3 are fast recovery diode or Schottky diode, for stopping the negative gate drive voltage of lower bridge IGBT pipe Q2, Q4, Q6, avoid influencing each other between the positive gate driving voltage of lower bridge IGBT pipe Q2, Q4, Q6 simultaneously.It should be noted that in another embodiment, triode Q7, Q8, Q9 also can save.
Details are as follows for the operation principle of lower bridge control unit 11: when threshold value comparing unit 9, give optocoupler OP1 and send driving signal here, the elementary lumination of light emitting diode of optocoupler OP1, the secondary phototriode of optocoupler OP1 starts conducting, this at present among bridge IGBT pipe Q2, Q4, Q6 all IGBT pipes under positive gate driving voltage provide a base bias current to impel this triode conducting can to the triode being attached thereto.For example: suppose that at a time bridge switch topology is in normal operating conditions, IGBT pipe Q1 wherein, Q4, Q6 is conducting, on this basis, due to extraneous interference signal, cause Q2 isolated drive circuit 2 to export a positive gate driving voltage to lower bridge IGBT pipe Q2, caused misleading of time bridge IGBT pipe Q2, now due to IGBT pipe Q1, all conductings of Q2 (being referred to as bridge arm direct pass), can between IGBT pipe Q1 and IGBT pipe Q2, flow through huge short circuit current, this short circuit current is detected, and make the secondary conducting of optocoupler OP1, due to IGBT pipe Q2, Q4, Q6 is under positive gate driving voltage, the diode D1 conducting being connected with the gate pole of IGBT pipe Q2, voltage stabilizing didoe Z1 is breakdown, triode Q7 conducting, the positive gate driving voltage clamper of IGBT being managed to Q2 is approximating the voltage stabilizing value of Z1 (being second voltage).Same reason, with the diode D2 conducting that the gate pole of IGBT pipe Q4 is connected, voltage stabilizing didoe Z2 is breakdown, triode Q8 conducting, the positive gate driving voltage clamper of IGBT being managed to Q4 is approximating the voltage stabilizing value of Z2 (being second voltage); With the diode D3 conducting that the gate pole of IGBT pipe Q6 is connected, voltage stabilizing didoe Z3 is breakdown, triode Q9 conducting, and the positive gate driving voltage clamper of IGBT being managed to Q6 is approximating the voltage stabilizing value of Z3 (being second voltage).According to the characteristic of IGBT, when positive gate driving voltage reduces, it is large that internal resistance meeting between its collector and emitter becomes, the positive gate driving voltage of IGBT pipe Q2, Q4, Q6 is all because the clamping action of voltage stabilizing didoe Z1, Z2, Z3 reduces now, in its conducting, resistive is large, play rapid inhibition and flow through the effect of the electric current of IGBT pipe Q1, Q2, Q4, Q6, electric current in whole bridge switch topology is inhibited, limited the du/dt on IGBT pipe collector, reduce the overvoltage spike on IGBT pipe collector, guarantee that IGBT pipe is not damaged between age at failure.
The effect of fault feedback unit 10 be by fault message by isolation and filtering after feed back to MCU 7, the transmission time of this fault feedback signal is set as than lagging behind the operate time of lower bridge control unit 11, be conducive to optocoupler OP1 before MCU receives fault feedback signal with regard to conducting, make lower bridge IGBT pipe Q2, Q4, the positive gate driving voltage of Q6 is first in second voltage, by MCU 7, stopped sending again the gate electrode drive signals of IGBT pipe, Shi Liu road isolated drive circuit 1, 3, 5, 2, 4, 6 output is blocked, IGBT manages Q1, Q2, Q3, Q4, Q5, Q6 quits work.
Fig. 5 is the circuit diagram of IGBT bridge switch topology embodiment bis-of the present invention, should be noted that, the same section of IGBT bridge switch topology embodiment mono-shown in this IGBT bridge switch topology embodiment and Fig. 4 does not repeat at this, different parts is below only described: in lower bridge control unit 11, the first output of the first level led anodal connect threshold comparing unit 9 of optocoupler OP2, the second output of the first level led negative pole connect threshold comparing unit 9 of optocoupler OP2, the emitter of the phototriode of optocoupler OP2 connects negative busbar N, the base stage of the collector connecting transistor Q10 of the phototriode of optocoupler OP2, the collector electrode of triode Q10 meets negative busbar N, the emitter of triode Q10 connects the positive pole of voltage stabilizing didoe Z4, the negative pole of voltage stabilizing didoe Z4 connects the negative pole of diode D4, the negative pole of the negative pole of diode D5 and diode D6, the positive pole of diode D4, bridge IGBT pipe Q2 under the positive pole difference Jie San road of the positive pole of diode D5 and diode D6, Q4, the gate pole of Q6.The principle of the operation principle of the lower bridge control unit 11 in this embodiment lower bridge control unit 11 is as shown in Figure 4 identical, at this, does not repeat.The technical scheme of implementing the present embodiment, decapacitation realizes outside reliable short-circuit protection, and circuit is simpler.
In addition, in the frequency converter of constructing in the present invention, inverter, Switching Power Supply, all can comprise above-described IGBT bridge switch topology, not repeat them here.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in claim scope of the present invention.
Claims (7)
1. a protection module for the drive circuit based on IGBT bridge switch topology, this drive circuit, for driving I GBT pipe according to the gate electrode drive signals of MCU output, is characterized in that, described protection module comprises:
Bus current detecting unit, is converted into voltage signal for detection of bus current and by detected current signal;
Threshold value comparing unit, connects described bus current detecting unit, for the reference voltage threshold value of described voltage signal and setting is compared;
Lower bridge control unit, connect described threshold value comparing unit, for when described voltage signal is greater than reference voltage threshold value, by the positive gate driving voltage voltage stabilizing of lower bridge IGBT pipe, to second voltage, described second voltage is less than described lower bridge IGBT and manages the positive gate driving voltage while normally working;
Fault feedback unit, connect described threshold value comparing unit, for being greater than reference voltage threshold value at described voltage signal, and the positive gate driving voltage voltage stabilizing of described lower bridge IGBT pipe is to second voltage, to MCU feedback fault-signal, and MCU stops exporting positive gate driving signal according to described fault-signal;
Described lower bridge control unit comprises the first optocoupler, the first diode, the second diode, the 3rd diode, the first voltage stabilizing didoe, the second voltage stabilizing didoe, the 3rd voltage stabilizing didoe, the first triode, the second triode and the 3rd triode, wherein, the first level led positive pole of described the first optocoupler connects the first output of described threshold value comparing unit, the first level led negative pole of described the first optocoupler connects the second output of described threshold value comparing unit, the emitter of the phototriode of described the first optocoupler connects negative busbar, and the collector electrode of the phototriode of described the first optocoupler connects respectively the base stage of the first triode, the base stage of the base stage of the second triode and the 3rd triode, the emitter of the first triode, the emitter of the emitter of the second triode and the 3rd triode connects respectively the positive pole of the first voltage stabilizing didoe, the positive pole of the positive pole of the second voltage stabilizing didoe and the 3rd voltage stabilizing didoe, the collector electrode of the first triode, the collector electrode of the collector electrode of the second triode and the 3rd triode connects respectively negative busbar, the negative pole of the first voltage stabilizing didoe, the negative pole of the negative pole of the second voltage stabilizing didoe and the 3rd voltage stabilizing didoe connects respectively the negative pole of the first diode, the negative pole of the negative pole of the second diode and the 3rd diode, the positive pole of the first diode, the gate pole of bridge IGBT pipe under the positive pole difference Jie San road of the positive pole of the second diode and the 3rd diode.
2. a protection module for the drive circuit based on IGBT bridge switch topology, this drive circuit, for driving I GBT pipe according to the gate electrode drive signals of MCU output, is characterized in that, described protection module comprises:
Bus current detecting unit, is converted into voltage signal for detection of bus current and by detected current signal;
Threshold value comparing unit, connects described bus current detecting unit, for the reference voltage threshold value of described voltage signal and setting is compared;
Lower bridge control unit, connect described threshold value comparing unit, for when described voltage signal is greater than reference voltage threshold value, by the positive gate driving voltage voltage stabilizing of lower bridge IGBT pipe, to second voltage, described second voltage is less than described lower bridge IGBT and manages the positive gate driving voltage while normally working;
Fault feedback unit, connect described threshold value comparing unit, for being greater than reference voltage threshold value at described voltage signal, and the positive gate driving voltage voltage stabilizing of described lower bridge IGBT pipe is to second voltage, to MCU feedback fault-signal, and MCU stops exporting positive gate driving signal according to described fault-signal;
Described lower bridge control unit comprises the second optocoupler, the 4th diode, the 5th diode, the 6th diode, the 4th voltage stabilizing didoe and the 4th triode, wherein, the first level led positive pole of described the second optocoupler connects the first output of described threshold value comparing unit, the first level led negative pole of described the second optocoupler connects the second output of described threshold value comparing unit, the emitter of the phototriode of described the second optocoupler connects negative busbar, the collector electrode of the phototriode of described the second optocoupler connects the base stage of the 4th triode, the emitter of the 4th triode connects the positive pole of the 4th voltage stabilizing didoe, the collector electrode of described the 4th triode connects negative busbar, the negative pole of the 4th voltage stabilizing didoe connects respectively the negative pole of the 4th diode, the negative pole of the negative pole of the 5th diode and the 6th diode, the positive pole of the 4th diode, the gate pole of bridge IGBT pipe under the positive pole difference Jie San road of the positive pole of the 5th diode and the 6th diode.
3. the drive circuit based on IGBT bridge switch topology, for driving IGBT pipe according to the gate electrode drive signals of MCU output, is characterized in that, described drive circuit comprises the protection module described in claim 1 to 2 any one.
4. an IGBT bridge switch topology, comprises MCU, and for drive the drive circuit of IGBT pipe according to the gate electrode drive signals of MCU output, it is characterized in that, described drive circuit comprises the protection module described in claim 1 to 2 any one.
5. a frequency converter, is characterized in that, comprises IGBT bridge switch topology claimed in claim 4.
6. an inverter, is characterized in that, comprises IGBT bridge switch topology claimed in claim 4.
7. a Switching Power Supply, is characterized in that, comprises IGBT bridge switch topology claimed in claim 4.
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| CN103207339B (en) * | 2013-04-28 | 2015-09-30 | 科博达技术有限公司 | Inverter over-current judging method and device thereof |
| CN103326324B (en) * | 2013-06-13 | 2015-12-02 | 浙江海得新能源有限公司 | A kind of IGBT module parallel protective circuit be applied in high-power inverter |
| CN104506024B (en) * | 2014-12-31 | 2018-06-08 | 深圳市英威腾电气股份有限公司 | A kind of frequency converter |
| CN111751692B (en) * | 2019-03-26 | 2023-05-23 | 维谛新能源有限公司 | IGBT through detection and protection method and device |
| CN110289598B (en) * | 2019-06-27 | 2022-09-20 | 中国电力科学研究院有限公司 | Comprehensive protection device and method applied to full-bridge inverter circuit |
| CN113054959A (en) * | 2021-04-02 | 2021-06-29 | 中北大学 | IGBT short-circuit protection circuit based on bridge arm current detection |
| CN114441926B (en) * | 2022-02-16 | 2022-12-09 | 广州科肯电气有限公司 | IGBT desaturation detection circuitry |
| CN115078952B (en) * | 2022-08-19 | 2022-12-23 | 江苏东海半导体股份有限公司 | IGBT driving fault detection method and system |
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| CN102377326A (en) | 2012-03-14 |
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