CN108322033B - The overcurrent protective device of SiCMOSFET converter and guard method - Google Patents
The overcurrent protective device of SiCMOSFET converter and guard method Download PDFInfo
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- CN108322033B CN108322033B CN201810273307.7A CN201810273307A CN108322033B CN 108322033 B CN108322033 B CN 108322033B CN 201810273307 A CN201810273307 A CN 201810273307A CN 108322033 B CN108322033 B CN 108322033B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16571—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses the overcurrent protective device of SiCMOSFET converter and guard methods.It include: drain-source voltage detection unit, Logical processing unit, five part of pulse blocking unit, SiCMOSFET and driving unit.Drain-source voltage detection unit is detected by the drain-source voltage that electric resistance partial pressure completes SiCMOSFET, reflects the drain current of SiCMOSFET；The detection of over-current signal is completed by triode, voltage-stabiliser tube and comparator etc.；The collecting voltage selection detection SiCMOSFET only drain-source voltage in on-state is penetrated by triode, and inhibits triode to penetrate collecting voltage spike by voltage-stabiliser tube, the malfunction of overcurrent protection is effectively prevented, makes the safe and reliable to operation of SiCMOSFET converter；The threshold value of overcurrent protection can be changed in the size for adjusting variable resistance, and setting is flexible and convenient.The overcurrent protective device and method of drain-source voltage detection, at low cost, securely and reliably, detection speed is fast.
Description
Technical field
The invention belongs to power electronics field, it is related to overcurrent protective device and the guarantor of a kind of SiCMOSFET converter
Maintaining method.
Background technique
Silicon carbide power electronic device is because having the high pressure resistant property of tens of thousands of volts, being greater than 500 DEG C of high-temperature stabilities, switch speed
The unique advantages such as fast and low-loss are spent, huge application potential is shown in Future New Energy Source converters.
SiCMOSFET converter is small in size, and loss is low, and power density height is to build a conservation-minded society, promote national economic development, practicing
The important support technology of innovation driving development strategy.
The detection of SiCMOSFET overcurrent and the guarantee that protection is that SiCMOSFET converter is safely operated.Over-current detecting method
Core as overcurrent protection should be paid close attention to.Currently, the over-current detecting method based on IGBT has tended to be mature, such as
Inductance detection, desaturation detection etc., while the over-current detection mode based on IGBT is transplanted in SiCMOSFET and is realized by someone
The function of over-current detection, but there are still many defects and deficiencies.
Article " the Short-Circuit Evaluation and delivered in A.E.Awwad et al. in 2015
Overcurrent Protection for SiC Power MOSFETs.”(Proceeding of IEEE 17th
European Conference on Power Electronics and Applications) in be directed to SiCMOSFET device
Part discloses the current foldback circuit based on inductance detection.It is nanohenry that the circuit, which seals in an inductance value in the source electrode of SiCMOSFET,
The inductance of grade, and the parallel RC circuits on the inductance, and using the midpoint of RC connection as the output end of detection circuit.When occurring
It when flowing failure, detects and occurs induced voltage on inductance, and then the output end voltage of detection circuit and the drain electrode for flowing through SiCMOSFET
Electric current has approximate ratio relationship.However this inductance that will test seals in the mode of SiCMOSFET source electrode equivalent to increase source
The parasitic inductance of pole can make the gate source voltage of SiCMOSFET generate pulsation and reduce switching speed.Furthermore the detection circuit
Essence is RLC resonance, and main circuit can be made to generate oscillation, influence the performance of main circuit.
Article " the Design and Performance Evaluation delivered in Zhiqiang Wang et al. in 2014
of Overcurrent Protection Schemes for Silicon Carbide(SiC)Power MOSFETs.”
It is directed to SiCMOSFET in (IEEE Transactions on Industrial Electronics), discloses one kind and is based on going
The current foldback circuit of saturation detection.The detection circuit is mainly made of detection diode, blanking circuit, comparator etc., is passed through
The drain-source voltage of detection diode pair SiCMOSFET is detected, and the blanking circuit by being made of capacitor etc. generates blanking
Time prevents over-current protection malfunction from making, while being compared with given value by comparator the collected drain-source voltage of diode
Compared with, and output overcurrent signal.According to circuit theory, which must have electric higher than the reverse blocking of busbar voltage
Pressure, it means that the diode has biggish forward voltage drop, this will bring adverse effect to the detection accuracy of desaturation, together
When the diode higher cost with high blocking voltage.In addition, the blanking circuit protecting circuit false triggering in order to prevent and being arranged
It will increase the delay time of protection circuit.
In conclusion being suitble to efficient, quick, the inexpensive SiCMOSFET over-current protection method of SiCMOSFET converter
It studies necessary.
Summary of the invention
The object of the present invention is to provide a kind of overcurrent protective device of SiCMOSFET converter and guard methods, solve
It is existing in the prior art that SiCMOSFET overcurrent protection mistake is generated due to larger drain-source voltage in SiCMOSFET shutdown
Movement and problem at high cost.
The technical scheme adopted by the invention is that the overcurrent protective device of SiCMOSFET converter, comprising: drain-source voltage
Detection unit, Logical processing unit, pulse blocking unit, SiCMOSFET and driving unit, drain-source voltage detection unit successively connect
Connect the grid of Logical processing unit, pulse blocking unit and SiCMOSFET4, drain-source voltage detection unit also simultaneously with
The drain electrode of SiCMOSFET is connected with source electrode, and drain-source voltage detection unit is also connected with pulse blocking unit, and pulse blocking unit is also same
When connect with the source electrode at driving unit both ends and SiCMOSFET.
The characteristics of overcurrent protective device of SiCMOSFET converter, also resides in:
Drain-source voltage detection unit includes resistance Rd1, and resistance Rd1 connects resistance Rc and resistance Rd2 simultaneously, and resistance Rd2 is also
Connection is with reference to ground；Resistance Rc is also connected with the emitter of triode Q, and the collector connection of triode Q is with reference to ground, the base of triode Q
Pole is connect with the cathode of voltage-stabiliser tube Dz and resistance R3 simultaneously, and the one end of resistance R3 also simultaneously with one end of resistance R1, resistance R2 connects
It connects, the resistance R1 other end is also connect with pulse blocking unit；The resistance R2 other end simultaneously with pulse blocking unit and SiCMOSFET
Connection；The anode of voltage-stabiliser tube Dz is connected with reference to ground；Resistance Rc is also connect with the positive input terminal of comparator U1C, comparator U1C's
Negative input end is connect with resistance R4 and variable resistance R5 simultaneously, and resistance R4 is also connected to power supply, and variable resistance R5 is also with reference
It is connected；The output end O1 of comparator U1C connects resistance R6 and Logical processing unit simultaneously, resistance R6 also with light emitting diode D1
Anode connection, the cathode of light emitting diode D1 with referring to connect；Resistance Rd1 is also connect with SiCMOSFET.
Logical processing unit includes nor gate U1N, and the first input end of nor gate U1N and the output end O1 of comparator connect
It connects, the second input terminal of nor gate U1N is connected with one end of resistance R7, the anode phase of the resistance R7 other end and light emitting diode D2
Even, the cathode of light emitting diode D2 is connected with reference to ground；Nor gate U1N is additionally provided with the second input that can be connected with peripheral control unit
End；The output end of the nor gate U1N is connected with the first input end of NAND gate U2N, the second input terminal of NAND gate U2N with
The output end of NOT gate U3N is connected, and the output end O2 of NAND gate U2N is defeated with the first of pulse blocking unit and NAND gate U3N simultaneously
Enter end connection, the second input terminal of NAND gate U3N is sequentially connected switch S and power supply.
Pulse blocking unit includes resistance Rg and mos pipe M, and the one end resistance Rg is connected with the output end O2 of NAND gate U2N, separately
One end connects the grid of mos pipe M, the drain electrode of mos pipe M while the output end phase with SiCMOSFET, resistance R1 and driving unit
Even, the source electrode of mos pipe M is connected with the ground terminal of SiCMOSFET, resistance R2 and driving unit simultaneously.
The source electrode of SiCMOSFET connects the source electrode of resistance R2, mos pipe M and simultaneously with reference to ground, and the grid of SiCMOSFET connects
The drain electrode of mos pipe M is connect, the drain electrode of SiCMOSFET is connect with resistance Rd1.
Triode Q is positive-negative-positive.
Mos pipe M is N-channel type.
The over-current protection method of SiCMOSFET converter is realized in accordance with the following steps:
Step 1: the databook for consulting selected model SiCMOSFET determines the model in conjunction with its practical driving voltage
Output characteristic curve between SiCMOSFET drain-source voltage and drain current；
Step 2: determining overcurrent protection threshold value Idp according to actual circuit；
Step 3: obtaining the leakage of SiCMOSFET when reaching overcurrent protection threshold value by the output characteristic curve in step 1
Source voltage threshold Vdsr；
Step 4: according to formulaCalculate the given value Vref of comparator negative input end, then root
According to formulaAdjust the resistance value of variable resistance R5；
Step 5: connecting circuit, which can realize overcurrent protection according to actual circuit state.
The invention has the advantages that it is quasi- according to SiCMOSFET characteristic, a kind of SiCMOSFET converter drain-source electricity is provided
Press the overcurrent protective device and method of detection.It is not required to current sensor, reflection SiCMOSFET drain electrode electricity is detected by electric resistance partial pressure
The drain-source voltage of stream, testing cost are low；The collecting voltage selection detection SiCMOSFET only drain-source in on-state is penetrated by triode
Voltage, and inhibit triode to penetrate collecting voltage spike by voltage-stabiliser tube, effectively prevent the malfunction of current foldback circuit；Adjusting can
Power transformation resistance changes overcurrent protection threshold value, facilitates the design of different model SiCMOSFET protection threshold value, improves SiCMOSFET change
The reliability of parallel operation overcurrent protection.
Detailed description of the invention
Fig. 1 is the unit composition figure of over-current detection driving device of the invention；
Fig. 2 is circuit diagram of the invention；
Fig. 3 is present invention test circuit；
Fig. 4 is the output characteristic curve figure of SiCMOSFET；
Fig. 5 is PSPICE simulation waveform of the present invention in operating condition once；
Fig. 6 is PSPICE simulation waveform of the present invention under operating condition two.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
The overcurrent protective device of SICMOSFET converter of the present invention, as shown in Figure 1, comprising: drain-source voltage detection unit 1,
Logical processing unit 2, pulse blocking unit 3, SiCMOSFET4 and driving unit 5；Drain-source voltage detection unit 1, which is sequentially connected, patrols
The grid of volume processing unit 2, pulse blocking unit 3 and SiCMOSFET4, drain-source voltage detection unit 1 also simultaneously with
The drain electrode of SiCMOSFET4 is connected with source electrode, and drain-source voltage detection unit 1 is also connected with pulse blocking unit 3, pulse blocking unit 3
Also it is connect simultaneously with the source electrode at 5 both ends of driving unit and SiCMOSFET4.
As shown in Fig. 2, being the circuit diagram of the overcurrent protective device of SiCMOSFET converter, drain-source voltage detection is single
Member 1 includes resistance Rd1, and resistance Rd1 connects resistance Rc and resistance Rd2 simultaneously, and resistance Rd2 is also connected with reference to ground；Resistance Rc also connects
The emitter of PNP type triode Q is connect, the collector connection of PNP type triode Q is with reference to ground, and the base stage of PNP type triode Q is simultaneously
It is connect with the cathode of voltage-stabiliser tube Dz and resistance R3, resistance R3 is also connect with one end of one end of resistance R1, resistance R2 simultaneously, resistance
The R1 other end is also connect with pulse blocking unit 3；The resistance R2 other end connects with pulse blocking unit 3 and SiCMOSFET4 simultaneously
It connects；The anode of voltage-stabiliser tube Dz is connected with reference to ground；Resistance Rc is also connect with the positive input terminal of comparator U1C, and comparator U1C's is negative
Input terminal is connect with resistance R4 and variable resistance R5 simultaneously, and resistance R4 is also connected to power supply, variable resistance R5 also with reference phase
Connection；The output end O1 of comparator U1C connects resistance R6 and Logical processing unit 2 simultaneously, resistance R6 also with light emitting diode D1
Anode connection, the cathode of light emitting diode D1 with referring to connect；Resistance Rd1 is also connect with SiCMOSFET4.
Logical processing unit 2 includes nor gate U1N, in the first input end of nor gate U1N and drain-source voltage detection unit 1
Comparator output end O1 connection, the second input terminal of nor gate U1N is connected with one end of resistance R7, the resistance R7 other end with
The anode of light emitting diode D2 is connected, and the cathode of light emitting diode D2 is connected with reference to ground；Nor gate U1N is additionally provided with can be with outside
Second input terminal of controller connection can be realized by this protection circuit to it when peripheral control unit detects other failures
The protection of his failure；The output end of nor gate U1N is connected with the first input end of NAND gate U2N, the second input of NAND gate U2N
End is connected with the output end of NAND gate U3N, the output end O2 of NAND gate U2N and meanwhile with pulse blocking unit and NAND gate U3N
First input end connection, the second input terminal of NAND gate U3N are sequentially connected switch S and power supply.
Pulse blocking unit 3 includes resistance Rg, the output of the NAND gate U2N in the one end resistance Rg and Logical processing unit 2
Hold O2 to be connected, the other end connects the grid of N-channel type mos pipe M, the drain electrode of N-channel type mos pipe M simultaneously with SiCMOSFET4, electricity
Resistance R1 is connected with the output end of driving unit 5, the source electrode of N-channel type mos pipe M and meanwhile with SiCMOSFET4, resistance R2 and driving
The ground terminal of unit 5 is connected.
The source electrode of SiCMOSFET4 connects resistance R2, the source electrode of N-channel type mos pipe M and simultaneously with reference to ground, SiCMOSFET4
Grid connection N-channel type mos pipe M drain electrode, the drain electrode of SiCMOSFET4 connect with resistance Rd1.
Wherein, the effect of driving unit is the gate source voltage signal for generating the SiCMOSFET of suitable amplitude and turning on and off.
The over-current protection method of SiCMOSFET converter of the present invention is realized in accordance with the following steps:
Step 1: the databook for consulting selected model SiCMOSFET determines the model in conjunction with its practical driving voltage
Output characteristic curve between SiCMOSFET drain-source voltage and drain current；
Step 2: determining overcurrent protection threshold value Idp according to actual circuit；
Step 3: obtaining the leakage of SICMOSFET when reaching overcurrent protection threshold value by the output characteristic curve in step 1
Source voltage threshold Vdsr；
Step 4: according to formulaCalculate the given value Vref of comparator negative input end, then root
According to formulaThe resistance value of variable resistance R5 is adjusted,
Wherein Rd1, Rd2, R4, R5 be respectively resistance Rd1 in drain-source voltage detection unit, resistance Rd2, resistance R4, can
Power transformation hinders the corresponding resistance value of R5, and VEE is the power supply in the overcurrent protective device of SiCMOSFET converter described in claim 2；
Step 5: connecting circuit, which can realize overcurrent protection according to actual circuit state.
When circuit conducting, the level signal that drain-source voltage detection unit can will acquire is transferred to Logical processing unit,
Be transferred to pulse blocking unit through Logical processing unit operation and then by level signal, pulse blocking unit according to logic at
The level signal of reason unit output is made whether the overcurrent protection movement of the driving pulse of block SiCMOSFET.Specifically: circuit
After conducting, comparator U1C positive input terminal can be directly obtained the drain-source voltage of SiCMOSFET, and be believed voltage by output end
Number it is transferred to the first input end of nor gate U1N；Or external equipment break down when, peripheral fault-signal can be transferred to or
The second input terminal of NOT gate U1N；
When the voltage of comparator U1C positive input terminal is lower than negative input end given value Vref, comparator U1C output end O1 is defeated
Low level out；When the voltage of comparator U1C positive input terminal is higher than negative input end given value Vref, comparator U1C output end O1
Export high level；
When comparator exports low level, and peripheral fault-signal is low level, the output end O2 output of NAND gate U2N is low
Level；When comparator exports high level or peripheral fault-signal is high level, the high electricity of output end O2 output of NAND gate U2N
It is flat；
NAND gate U2N gives level signal to mos pipe M by output end O2, when NAND gate U2N exports low level, mos
Pipe M cut-off, SiCMOSFET are worked normally；When NAND gate U2N exports high level, mos pipe M conducting blocks SiCMOSFET's
Driving pulse, SiCMOSFET stop working.
As shown in figure 3, the overcurrent protective device of SiCMOSFET converter of the present invention and the test circuit of guard method are
SiCMOSFET semi-bridge alternation circuit.Wherein upper bridge arm SiCMOSFET pipe T1 and lower bridge arm SiCMOSFET pipe T2 is connected in series, branch
It supports capacitor C1, C2 to be connected in series, capacitive branch, SiCMOSFET switching tube branch are connected with power sources in parallel, and the negative terminal of power supply connects
Ground is load branch between the midpoint of capacitive branch and the midpoint of switching tube branch.Loadtype is that pure resistance is negative in this test circuit
It carries, is indicated with resistance R；Inductance L is used to the parasitic inductance of analog line；The series arm of resistance Ra and switch Sa is connected in parallel on load
The both ends of R, over-current phenomenon avoidance in analog circuit, this overcurrent are denoted as internal over current fault, and corresponding over-current signal is denoted as inside
Over-current signal.
Fig. 4 is the output characteristic curve of SiCMOSFET, according to Fig. 4 it can be concluded that in the present invention overcurrent protection threshold value with than
Compared with the relationship of device negative input end given value.It can be seen that drain-source voltage increases with the increase of drain current.Enabling Vref is to compare
Device negative input end given value can determine that Idp is corresponding according to Fig. 4 if expected overcurrent protection threshold value is Idp
SiCMOSFET drain-source voltage is Vdsr, and then passes through formula:Calculate comparator negative input end
Given value.
As shown in Figure 5 and Figure 6, the working condition of switching tube circuit under different operating situation is illustrated for the above bridge, and
Detailed analysis is done to specific work process and working principle of the invention.
It as shown in table 1, is Logical processing unit logic function table.
1 Logical processing unit logic function table of table
Embodiment 1
For the above bridge SiCMOSFET, illustrate SiCMOSFET half-bridge converter when no overcurrent occurs, overcurrent is protected
Protect the working condition of detection circuit.
SiCMOSFET selects the switching tube of the model SCH2080KE 1200V 35A of ROHM company, involved in Fig. 2
To power supply+VEE be positive 5V power supply, resistance Rd1 and Rd2 are respectively that 0 Ω and 1M Ω, R4 is 5k Ω.Actual test driving electricity
The positive driving voltage of road design is 20V, it is assumed that determines that overcurrent protection threshold value is 28A, then the SiCMOSFET output for looking into Fig. 4 is special
Corresponding drain-source voltage Vdsr is 2.3V at this time known to linearity curve, according to formulaIt can be calculated and compare
The voltage given value Vref of device U1C negative input end should be set as 2.3V.And due toIt then can be calculated variable
Resistance R5 should be set as 4.26k Ω.Testing power supply E in circuit diagram 3 is 150V, and C1, C2 are 3300 μ F, and load R is 75 Ω, electricity
Resistance Ra is 1 Ω, and parasitic inductance L is 50nH, and switch Sa is closed in 240 μ s, and Fig. 5 is the waveform diagram for meeting this example.
When bearing positive driving voltage between T1 grid source electrode, T1 conducting, and B point current potential is greater than zero, PNP type triode Q is turned off,
Since the on-state voltage drop of T1 is very low and is bordering on zero, the positive input terminal current potential of comparator U1C is approximately equal to zero, less than given overcurrent threshold
Value, comparator U1C export low level；Nor gate U1N exports high level；NAND gate U3N exports low level；The pulse blocking electricity of T1
Road is not triggered, and T1 is worked normally.When bearing negative driving voltage between T1 grid source electrode, T1 shutdown, and B point current potential is less than zero, PNP
Type triode Q is open-minded, and triode Q emitter potential is that triode Q penetrates collection on state voltage, about 0.3V, i.e. comparator U1C
The input voltage of positive input terminal be 0.3V, less than the voltage given value 2.3V of negative input end, therefore the output of comparator U1C is low
Level；Nor gate U1N output is high level；NAND gate U3N exports low level；The pulse blocking circuit of T1 is not triggered.
Fig. 5 represent bridge arm SiCMOSFET from work normally to when there is over current fault in PSPICE simulation software
Simulation waveform, from top to bottom:
The gate source voltage Ugs of upper bridge arm SiCMOSFET pipe T1 in first waveforms stands semi-bridge alternation circuit；
Triode Q penetrates collecting voltage Uec in bridge arm over-current detection driving device on second waveforms stands；
On third waveforms stands in bridge arm over-current detection driving device comparator U1C output end O1 voltage；
On 4th waveforms stands in bridge arm over-current detection driving device Logical processing unit output end O2 voltage；
The drain current Id of bridge arm SiCMOSFET pipe T1 on 5th waveforms stands.
Embodiment 2
For the above bridge SiCMOSFET, illustrate SiCMOSFET half-bridge converter when overcurrent occurs, overcurrent is examined
Survey the working condition of protection circuit, it is clear that over current fault only appears in T1 opening process.The embodiment of the present invention 1 and embodiment
2 groups are combined into operating condition one, that is, circuit described in technical solution of the present invention is for the overcurrent protection situation in itself circuit.
SiCMOSFET selects the switching tube of the model SCH2080KE 1200V 35A of ROHM company, and involved power supply in Fig. 2+
VEE is positive 5V power supply, and resistance Rd1 and Rd2 are respectively that 0 Ω and 1M Ω, R4 is 5k Ω, and actual test driving circuit designs just
Driving voltage is 20V, it is assumed that determines that overcurrent protection threshold value is 28A, looks into known to the SiCMOSFET output characteristic curve of Fig. 4 at this time
Corresponding drain-source voltage is 2.3V.According to formulaThe voltage given value that can be calculated comparator U1C is answered
It is set as 2.3V.Again by formulaCan be calculated variable resistance R5 should be set as 4.26k Ω.Test circuit diagram 3
Middle power supply E is 150V, and C1, C2 are 3300 μ F, and load R is 75 Ω, and resistance Ra is 1 Ω, and parasitic inductance L is 50nH, switch Sa
It is closed in 240 μ s, Fig. 5 is the waveform diagram for meeting this example.
When over current fault occurs in T1, positive driving voltage is born between the grid source electrode of T1, B point current potential is greater than zero, and triode Q is closed
It is disconnected；With being continuously increased for drain current, the drain-source voltage of T1 can be also continuously increased, i.e. A point voltage can be also continuously increased, therefore three
Pole pipe Q emitter potential constantly increases, and is greater than given overcurrent threshold value when the input voltage of comparator U1C positive input terminal is increased up
When, the overturning of comparator U1C output level becomes high level, and light emitting diode D1 is lit at this time, while nor gate U1N output is
Low level, NAND gate U3N export high level, the pulse blocking circuit of pulse blocking unit triggers T1, T1 shutdown.
Embodiment 3
For the above bridge SiCMOSFET, illustrate when there is external fault signal to be passed to, the detection of SiCMOSFET overcurrent is protected
The working condition of protection circuit.
The embodiment of the present invention 3 is exactly operating condition two, that is, when there is external fault, through the invention electricity described in technical solution
Realize the protection to other failures in road.SiCMOSFET selects the switch of the model SCH2080KE 1200V 35A of ROHM company
Pipe, involved power supply+VEE is positive 5V power supply in Fig. 2, and peripheral fault-signal is accessed in 240 μ s；Test circuit diagram 3
Middle power supply E is 150V, and C1, C2 are 3300 μ F, and load R is 75 Ω, and parasitic inductance L is 50nH, two lower switch Sa of operating condition not
Closure.
When the output signal of the drain-source voltage detection unit of T1 is low level, and peripheral fault-signal is high level, hair
Optical diode D2 is lit, and nor gate U1N exports low level, and NAND gate U3N exports high level, the mos pipe M of pulse blocking unit
It is open-minded, trigger the pulse blocking circuit of T1, T1 shutdown.
It is imitative in PSPICE that Fig. 6 represents bridge SiCMOSFET over-current detection protection circuit after the access of peripheral fault-signal
Simulation waveform in true software, from top to bottom successively are as follows:
Peripheral fault-signal OF in bridge over-current detection driving device on first waveforms stands；
On second waveforms stands in bridge over-current detection driving device Logical processing unit output end O2 voltage；
The drain current Id of bridge SiCMOSFET T1 on third waveforms stands.
Claims (7)
- The overcurrent protective device of 1.SiCMOSFET converter characterized by comprising drain-source voltage detection unit (1), it is described Drain-source voltage detection unit (1) is sequentially connected the grid of Logical processing unit (2), pulse blocking unit (3) and SiCMOSFET (4) Pole, the drain-source voltage detection unit (1) also connect with the drain electrode of SiCMOSFET (4) and source electrode simultaneously, the drain-source voltage inspection Survey unit (1) be also connected with pulse blocking unit (3), the pulse blocking unit (3) also simultaneously with driving unit (5) both ends and The source electrode of SiCMOSFET (4) connects；The Logical processing unit (2) includes nor gate U1N, and the first input end and drain-source voltage of the nor gate U1N detects Unit (1) connection, the second input terminal of nor gate U1N are connected with one end of resistance R7, the resistance R7 other end and light emitting diode The anode of D2 is connected, and the cathode of light emitting diode D2 is connected with reference to ground；The nor gate U1N is additionally provided with can be with peripheral control unit The second connected input terminal；The output end of the nor gate U1N is connected with the first input end of NAND gate U2N, NAND gate U2N's Second input terminal is connected with the output end of NAND gate U3N, the output end O2 of NAND gate U2N simultaneously with pulse blocking unit (3) and The first input end of NAND gate U3N connects, and the second input terminal of the NAND gate U3N is sequentially connected switch S and power supply.
- 2. the overcurrent protective device of SiCMOSFET converter according to claim 1, which is characterized in that the drain-source electricity Pressing detection unit (1) includes resistance Rd1, and the resistance Rd1 connects resistance Rc and resistance Rd2 simultaneously, and resistance Rd2 is also connected with reference Ground；The resistance Rc is also connected with the emitter of triode Q, and the collector connection of the triode Q is with reference to ground, the triode Q Base stage connect simultaneously with the cathode of voltage-stabiliser tube Dz and resistance R3, resistance R3 also and meanwhile with one end of resistance R1, resistance R2 one End connection, the resistance R1 other end are also connect with pulse blocking unit (3)；The resistance R2 other end while and pulse blocking Unit (3) and SiCMOSFET (4) connection；The anode of the voltage-stabiliser tube Dz is connected with reference to ground；The resistance Rc is also connect with the positive input terminal of comparator U1C, the negative input end of comparator U1C simultaneously with resistance R4 and can Power transformation hinders R5 connection, and resistance R4 is also connected to power supply, and variable resistance R5 also with reference is connected；The output end O1 of the comparator U1C connects resistance R6 and Logical processing unit (2) simultaneously, resistance R6 also with light-emitting diodes The anode of pipe D1 connects, and the cathode of light emitting diode D1 is connect with reference；The resistance Rd1 is also connect with SiCMOSFET (4).
- 3. the overcurrent protective device of SiCMOSFET converter according to claim 1, which is characterized in that the pulse envelope Lock unit (3) includes resistance Rg, and the one end resistance Rg is connected with the output end O2 of NAND gate U2N, and the other end connects the grid of mos pipe M The drain electrode of pole, mos pipe M is connected with the output end of SiCMOSFET (4), resistance R1 and driving unit (5) simultaneously, the source of mos pipe M Pole is connected with the ground terminal of SiCMOSFET (4), resistance R2 and driving unit (5) simultaneously.
- 4. the overcurrent protective device of SiCMOSFET converter according to claim 3, which is characterized in that described The source electrode of SiCMOSFET (4) connects the source electrode of resistance R2, mos pipe M and simultaneously with reference to ground, the grid connection of SiCMOSFET (4) The drain electrode of the drain electrode of mos pipe M, SiCMOSFET (4) is connect with resistance Rd1.
- 5. the overcurrent protective device of SiCMOSFET converter according to claim 2, which is characterized in that the triode Q For positive-negative-positive.
- 6. the overcurrent protective device of SiCMOSFET converter according to claim 3, which is characterized in that the mos pipe M For N-channel type.
- The over-current protection method of 7.SiCMOSFET converter, which is characterized in that become using SiCMOSFET as claimed in claim 2 The overcurrent protective device of parallel operation is realized, is realized in accordance with the following steps:Step 1: the databook for consulting selected model SiCMOSFET determines the model in conjunction with its practical driving voltage Output characteristic curve between SiCMOSFET drain-source voltage and drain current；Step 2: determining overcurrent protection threshold value Idp according to actual circuit；Step 3: obtaining the drain-source electricity of SiCMOSFET when reaching overcurrent protection threshold value by the output characteristic curve in step 1 Press threshold value Vdsr；Step 4: according to formulaThe given value Vref for calculating comparator negative input end, further according to public affairs FormulaThe resistance value of variable resistance R5 is adjusted,Wherein Rd1, Rd2, R4, R5 be respectively resistance Rd1 in drain-source voltage detection unit, resistance Rd2, resistance R4, can power transformation The corresponding resistance value of R5 is hindered, VEE is the power supply in the overcurrent protective device of the SiCMOSFET converter；Step 5: connecting circuit, which can realize overcurrent protection according to actual circuit state.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109302169B (en) * | 2018-08-23 | 2022-04-22 | 北京长峰天通科技有限公司 | SiC MOSFET drive protection circuit and protection method thereof |
| CN111585553B (en) * | 2020-04-29 | 2023-06-13 | 连云港灌源科技有限公司 | Short-circuit protection structure and protection method for wide-bandgap semiconductor SiC MOSFET |
| CN114545178A (en) * | 2020-11-25 | 2022-05-27 | 中兴通讯股份有限公司 | Detection method and detection circuit |
| CN112468131B (en) * | 2020-11-30 | 2023-12-12 | 珠海格力电器股份有限公司 | Driving circuit and driving device |
| CN112821886A (en) * | 2020-12-23 | 2021-05-18 | 重庆两江卫星移动通信有限公司 | Over-current detection protection circuit based on MOSFET |
| CN116647223A (en) * | 2023-07-24 | 2023-08-25 | 深圳基本半导体有限公司 | Gate-level driving circuit, chip and electronic equipment |
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