CN112468131B - Driving circuit and driving device - Google Patents
Driving circuit and driving device Download PDFInfo
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- CN112468131B CN112468131B CN202011377739.6A CN202011377739A CN112468131B CN 112468131 B CN112468131 B CN 112468131B CN 202011377739 A CN202011377739 A CN 202011377739A CN 112468131 B CN112468131 B CN 112468131B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 110
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 110
- 230000005669 field effect Effects 0.000 claims abstract description 65
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 claims description 60
- 239000003990 capacitor Substances 0.000 claims description 24
- 230000000087 stabilizing effect Effects 0.000 claims description 23
- 230000005856 abnormality Effects 0.000 claims description 15
- 230000015556 catabolic process Effects 0.000 claims description 13
- 230000002159 abnormal effect Effects 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The present application relates to a driving circuit and a driving device. The driving circuit includes: the driving circuit includes: a power supply circuit for supplying a driving current to the driving circuit; the buffer circuit is connected with the power supply circuit and used for amplifying driving current according to the control signal, and the driving current is used for driving the silicon carbide field effect transistor; the overvoltage protection circuit is used for inhibiting the conduction voltage of the silicon carbide field effect transistor when the conduction voltage is greater than or equal to a voltage threshold value; and the overcurrent protection circuit is used for inhibiting the on-state current of the silicon carbide field effect transistor when the on-state current is greater than or equal to a current threshold value. The driving circuit is simple in structure, and reliable operation of the silicon carbide field effect transistor is guaranteed under special environments such as high power, high frequency and the like through the overvoltage protection circuit and the overcurrent protection circuit.
Description
Technical Field
The present application relates to the field of power electronics, and in particular, to a driving circuit and a driving device.
Background
In the third generation of semiconductors, siC (silicon carbide) materials have a large forbidden bandwidth, high critical breakdown field strength, and high saturation drift velocity compared to Si (silicon) materials, so SiC MOSFETs (silicon carbide field effect transistors) are more suitable for operation under special conditions of high temperature, high power, high frequency, and the like than Si MOSFETs (silicon field effect transistors).
The characteristics of the SiC MOSFET, the Si MOSFET and the Si IGBT are different, the most obvious difference is that the driving voltages are different, the Si MOSFET is operated at the driving voltage of 0 to +15V, the SiC MOSFET is more suitable for being operated at the driving voltage of-6 to +22V, and the voltage response speed is faster. The peak value of the required driving current is large, the power of the required driving power supply is large due to high switching frequency, and the requirement on the driving power supply and signal isolation is higher due to the large dv/dt caused by high-speed switching, so that the distributed capacitance formed by the isolation is extremely low, the Si MOSFET and the Si IGBT driving circuit cannot directly drive the SiC MOSFET, and the driving circuit is required to be designed in a targeted way.
Disclosure of Invention
The application provides a driving circuit and a driving device for solving the technical problem of ensuring reliable operation of a SiC MOSFET under special conditions of high temperature, high power, high frequency and the like.
In a first aspect, the present application provides a driving circuit comprising:
a power supply circuit for supplying a driving current to the driving circuit;
the buffer circuit is connected with the power supply circuit and used for amplifying driving current according to the control signal, and the driving current is used for driving the silicon carbide field effect transistor;
the overvoltage protection circuit is used for inhibiting the conduction voltage of the silicon carbide field effect transistor when the conduction voltage is greater than or equal to a voltage threshold value;
and the overcurrent protection circuit is used for inhibiting the on-state current of the silicon carbide field effect transistor when the on-state current is greater than or equal to a current threshold value.
Optionally, the buffer circuit includes:
a buffer for amplifying the driving current according to the control signal;
and the grid resistor is connected with the buffer and used for reducing voltage spikes when the driving current drives the silicon carbide field effect transistor to be turned on or off.
Optionally, the overvoltage protection circuit includes:
the voltage stabilizing diode is used for reversely breaking down the voltage stabilizing diode when the drain-source voltage of the silicon carbide field effect transistor is larger than or equal to a voltage threshold value;
and the shunt resistor is connected with the zener diode and is used for shunting the breakdown current which breaks down the zener diode reversely to the grid electrode of the silicon carbide field effect transistor so as to reduce the drain-source voltage of the silicon carbide field effect transistor.
Optionally, the overcurrent protection circuit includes:
the desaturation detection circuit is used for detecting the conduction current of the silicon carbide field effect transistor, and generating a current abnormality signal when the conduction current is greater than or equal to a current threshold value, wherein the current abnormality signal is used for controlling the turn-off of the silicon carbide field effect transistor.
Optionally, the desaturation detection circuit includes:
the detection diode is used for reversely breaking down the detection diode when the drain current of the silicon carbide field effect transistor is greater than or equal to a current threshold value;
the detection capacitor is connected with the detection diode and is used for charging the detection capacitor according to a current source when the detection diode breaks down reversely;
and the comparator is connected with the detection capacitor and is used for outputting the current abnormality signal when the capacitance voltage of the detection capacitor is greater than or equal to a preset voltage.
Optionally, the overcurrent protection circuit further includes:
the first turn-off circuit is connected with the desaturation detection circuit, turns off the buffer circuit according to the abnormal signal, turns off the silicon carbide field effect transistor through the buffer circuit, and inhibits the on current.
Optionally, the overcurrent protection circuit includes:
and the second turn-off circuit is connected with the desaturation detection circuit, turns off the silicon carbide field effect transistor according to the abnormal signal and inhibits the on current.
Optionally, the driving circuit further includes:
the power supply module is used for receiving a driving power supply and converting the driving power supply into output voltage;
the voltage stabilizing circuit is connected with the power supply module and used for converting the output voltage into a voltage-stabilized power supply;
and the driving chip is connected with the voltage stabilizing circuit and used for outputting the driving current according to the voltage stabilizing power supply.
Optionally, the driving circuit further includes:
and the photoelectric coupler is connected with the power supply circuit and is used for receiving a control signal from the control circuit and reducing the output impedance of the control circuit.
In a second aspect, the present application provides a driving device including a driving circuit including:
a power supply circuit for supplying a driving current to the driving circuit;
the buffer circuit is connected with the power supply circuit and used for amplifying driving current according to the control signal, and the driving current is used for driving the silicon carbide field effect transistor;
the overvoltage protection circuit is used for inhibiting the conduction voltage of the silicon carbide field effect transistor when the conduction voltage is greater than or equal to a voltage threshold value;
and the overcurrent protection circuit is used for inhibiting the on-state current of the silicon carbide field effect transistor when the on-state current is greater than or equal to a current threshold value.
The driving circuit and the driving device, the driving circuit includes: a power supply circuit for supplying a driving current to the driving circuit; the buffer circuit is connected with the power supply circuit and used for amplifying driving current according to the control signal, and the driving current is used for driving the silicon carbide field effect transistor; the overvoltage protection circuit is used for inhibiting the conduction voltage of the silicon carbide field effect transistor when the conduction voltage is greater than or equal to a voltage threshold value; and the overcurrent protection circuit is used for inhibiting the on-state current of the silicon carbide field effect transistor when the on-state current is greater than or equal to a current threshold value. The driving circuit is simple in structure, and reliable operation of the silicon carbide field effect transistor is guaranteed under special environments such as high power, high frequency and the like through the overvoltage protection circuit and the overcurrent protection circuit.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
In order to more clearly illustrate the embodiments of the application or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to a person skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a diagram of an application environment of a driving circuit according to one embodiment;
FIG. 2 is a schematic diagram of waveforms of a control signal according to one embodiment;
FIG. 3 is a schematic diagram of a driving circuit according to an embodiment;
FIG. 4 is a schematic diagram of an overvoltage protection circuit according to one embodiment;
FIG. 5 is a schematic diagram of a simulation curve in one embodiment;
fig. 6 is a schematic diagram of an embodiment of an overcurrent protection circuit.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
FIG. 1 is a diagram of an application environment of a driving circuit in one embodiment. Referring to fig. 1, the driving circuit is applied to a silicon carbide field effect transistor control system. The silicon carbide field effect transistor control system includes a control circuit 110, a drive circuit 120, and a silicon carbide field effect transistor (SiC MOSFET) 130. The control circuit 110 refers to a control loop formed by the MCU (Microcontroller Unit, single-chip microcomputer) and peripheral circuits thereof, the control circuit 110 outputs a control signal to the driving circuit 120, the driving circuit 120 is electrically connected with the silicon carbide field effect transistor 130, and the driving circuit 120 controls the silicon carbide field effect transistor 130 according to the control signal.
The control signal is a pulse signal, the pulse signal has enough rising and falling speeds, and rising edges and falling edges of the pulse signal are steep, referring to fig. 2, the pulse signal is a rectangular wave in this embodiment. Because the driving requirement of the SiC MOSFET is extremely high, the driving voltage range of the SiC MOSFET is-6-22V, the starting voltage is 2.7V, the starting voltage of the SiC MOSFET is + V, and the turning-off voltage is-4V for safety, so that the high level of the control signal is +20V, the low level is-4V, the SiC MOSFET is driven to be turned on or turned off according to the high level or the low level of the control signal, and the control signal is recorded as PWM.
In one embodiment, fig. 3 is a schematic flow diagram of a driving circuit 120 in one embodiment, referring to fig. 3, a driving circuit 120 is provided, where the driving circuit 120 specifically includes:
a power supply circuit 121 for supplying a driving current to the driving circuit 120.
Specifically, the power supply circuit 121 receives a driving power supply, and outputs a driving current to the driving circuit 120 according to the driving power supply, wherein the driving power supply in this embodiment is 15V, and the output driving current is-9 to 9a.
And the buffer circuit 123 is connected with the power supply circuit 121 and is used for amplifying a driving current according to the control signal, and the driving current is used for driving the silicon carbide field effect transistor 130.
Specifically, the buffer circuit 123 includes a buffer or a circuit with a similar structure, has advantages of small input load and strong output driving capability, and can be used as a power amplifying circuit to amplify driving current, thereby improving load capability.
The overvoltage protection circuit 122 is configured to suppress the on voltage of the silicon carbide fet 130 when the on voltage is greater than or equal to a voltage threshold.
Specifically, since the SiC MOSFET has a fast turn-off speed and there is a stray inductance in the line, voltage spikes may occur when a large di/dt occurs according to v=l. The on-voltage of the SiC MOSFET, which is the voltage between the drain and source of the SiC MOSFET, is detected in real time by the overvoltage protection circuit 122, and is referred to as drain-source voltageThat is, when the drain-source voltage is greater than or equal to the voltage threshold, the overvoltage protection circuit 122 suppresses the voltage spike, and prolongs the turn-off time, and the voltage threshold is the voltage protection threshold of the driving circuit 120, which can be customized according to the actual situation.
And an overcurrent protection circuit 124, configured to suppress the on-current of the silicon carbide fet 130 when the on-current is greater than or equal to a current threshold.
Specifically, the gate capacitance of the SiC MOSFET is small, the short-circuit time it can withstand is short, when a load short-circuit occurs, a large short-circuit current occurs, the short-circuit time the SiC MOSFET can withstand is about 3us, and components will be burned if not turned off in time. The on-current is the drain current of the SiC MOSFET, which is denoted asWhen the drain current is greater than the current threshold, it indicates that a load short circuit occurs, and the SiC MOSFET is turned off in time by the overcurrent protection circuit 124, so as to inhibit the drain current, and the current threshold is a current protection threshold of the driving circuit 120, which can be customized according to the actual situation.
In one embodiment, the buffer circuit 123 includes a buffer for amplifying the driving current according to the control signal; and the grid resistor is connected with the buffer and used for reducing voltage spikes when the driving current drives the silicon carbide field effect transistor 130 to be turned on or off.
Specifically, referring to fig. 4, the buffer includes two inverters including a first inverter T1 and a second inverter T2, an input terminal of the buffer is for receiving a control signal and a driving current, and an output terminal of the buffer is connected with the SiC MOSFET through a gate resistorThe grid electrode is connected, and the grid electrode resistor comprises a positive output resistorAnd negative output resistance->The positive output resistor and the negative output resistor are connected in parallel, a positive diode D1 is connected between the positive output resistor and the output end of the buffer, and a negative diode D2 is connected between the negative output resistor and the output end point of the buffer.
The positive output resistor is smaller than the negative output resistor, and the smaller the resistance value of the grid resistor is, the faster the switching speed of the device is, the smaller the loss is, and the device can be quickly opened through the positive output resistor with the smaller resistance value. However, due to parasitic inductance in the line, a voltage spike is generated at the moment of switching off, and the device is easy to damage, so that the voltage spike is restrained by the negative output resistor with larger resistance value when the device is switched off. In order to compare the influence of different gate resistances on the switching characteristics of the device, different resistances are selected as the gate resistances for testing, and when the gate resistances are selected, the resistance of the SiC MOSFET with the gate waveform closest to the rectangular wave is selected.
In one embodiment, the overvoltage protection circuit 122 includes a zener diode for reverse breakdown of the zener diode when the drain-source voltage of the silicon carbide fet 130 is greater than or equal to a voltage threshold; and the shunt resistor is connected with the zener diode and is used for shunting the breakdown current which breaks down the zener diode reversely to the grid electrode of the silicon carbide field effect transistor 130 so as to reduce the drain-source voltage of the silicon carbide field effect transistor 130.
Specifically, referring to fig. 4, the overvoltage protection circuit 122 includes a zener diodeThe positive pole of the voltage stabilizing diode is connected with the positive pole of the third diode, and the negative pole of the voltage stabilizing diode is connected with the drain electrode of the SiC MOSFET. The shunt resistor comprises a first resistor R1 and a second resistor R2, the first end of the first resistor is connected with the input end of the buffer, the second end of the first resistor is connected withThe negative pole of third diode links to each other, and the second end of first resistance still links to each other with the first end of second resistance, and the second end of second resistance links to each other with the grid of SiC MOSFET.
When the drain-source voltage of the SiC MOSFET is larger than or equal to the voltage threshold, the reverse breakdown voltage stabilizing diode is used for shunting the breakdown current of the breakdown voltage stabilizing diode through the first resistor and the second resistor respectively, and shunting the breakdown current to the grid electrode of the SiC MOSFET through the second resistor so as to raise the gate voltage of the SiC MOSFET and enable the SiC MOSFET to work in a saturation region transiently; breakdown current is shunted to the input end of the buffer through the first resistor, and after being amplified by the buffer, the breakdown current flows into the grid electrode of the SiC MOSFET, namely flows into the charging gate electrode of the SiC MOSFET, so that the rise of drain-source voltage is further restrained, the voltage spike is restrained in time when the drain-source voltage of the SiC MOSFET is overhigh, and the oscillation is reduced.
As shown in fig. 5, fig. 5 (a) corresponds to a simulation curve without the overvoltage protection circuit 122, in which a voltage spike having a higher peak value exists. Fig. 5 (b) corresponds to a simulation curve with the overvoltage protection circuit 122, in which the voltage spike is significantly attenuated in the simulation curve with the overvoltage protection circuit 122.
In one embodiment, the over-current protection circuit 124 includes a desaturation detection circuit 1241 for detecting the on-current of the silicon carbide fet 130, and generating a current abnormality signal for controlling the turn-off of the silicon carbide fet 130 when the on-current is greater than or equal to a current threshold.
Specifically, referring to fig. 6, a desaturation detection circuit 1241 detects the drain current of the SiC MOSFETWhen the drain current is greater than the current threshold, it indicates that the SiC MOSFET is shorted, the voltage across the parasitic diode connected in parallel between the drain and source of the SiC MOSFET +.>Rapidly rise to the DC bus voltage, i.e. when the voltage across the parasitic diode is detected to be the DC bus voltageThe saturation detection circuit 1241 outputs a current abnormality signal, and turns off the SiC MOSFET in time according to the current abnormality signal.
In one embodiment, the desaturation detection circuit 1241 includes a detection diode for reverse breakdown when the drain current of the silicon carbide fet 130 is greater than or equal to the current threshold; the detection capacitor is connected with the detection diode and is used for charging the detection capacitor according to a current source when the detection diode breaks down reversely; and the comparator is connected with the detection capacitor and is used for outputting the current abnormality signal when the capacitance voltage of the detection capacitor is greater than or equal to a preset voltage.
Specifically, referring to fig. 6, the desaturation detection circuit 1241 includes a detection diodeThe device comprises a third resistor R, a detection capacitor C, a Comparator and a first field effect transistor T3, wherein the positive electrode of the detection diode is connected with the first end of the third resistor, and the negative electrode of the detection diode is connected with the drain electrode of the SiC MOSFET. The second end of the third resistor is connected with the first end of the detection capacitor, and the second end of the detection capacitor is grounded. The first end of the detection capacitor is also connected with the first input end of the comparator, and the first end of the detection capacitor is also connected with a current source +>The first end of the detection capacitor is also connected with the drain electrode of the first field effect transistor T3. The second input end of the OR gate is connected with the output end of the AND gate, and the second input end of the AND gate receives the signal.
When the drain current of the SiC MOSFET is greater than or equal to a current threshold, namely, when the voltage of a parasitic diode of the SiC MOSFET rises to a DC bus voltage, the detection diode is reversely broken down, the current source charges the detection capacitor, when the voltage of the detection capacitor is greater than or equal to a preset voltage, the comparator turns over to output a high level, the high level passes through an OR gate and then outputs the high level, a trigger signal is the high level, when the first input end and the second input end of the AND gate are both the high level, a current abnormality signal of the high level is output, and the current abnormality signal is marked as Fault.
In one embodiment, the over-current protection circuit 124 further includes a first turn-off circuit 1242 connected to the desaturation detection circuit 1241, and turns off the buffer circuit 123 according to the abnormal signal, and turns off the silicon carbide fet 130 through the buffer circuit 123 to suppress the on-current.
Specifically, the first turn-off circuit 1242 is composed of a nand logic gate circuit, the first turn-off circuit 1242 includes a nor gate and a nor gate, the first input end of the nor gate receives the trigger signal, the second input end of the nor gate is connected to the output end of the and gate in the desaturation detection circuit 1241, and the output end of the nor gate is connected to the input end of the first inverter in the buffer. The first input of the NOT OR gate receives the trigger signal, the second input of the NOT OR gate is connected to the output of the AND gate in the desaturation detection circuit 1241, and the output of the NOT OR gate is connected to the input of the second inverter in the buffer.
When the desaturation detection circuit 1241 outputs a high-level current anomaly signal, the current anomaly signal and the trigger signal output a low level through the nor gate, and the first inverter is turned off by the low level. The current abnormality signal and the trigger signal output a high level through the NOT gate, the high level turns on the second inverter, and the gate voltage is pulled down through the second inverter through the negative output resistor, thereby turning off the SiC MOSFET.
In one embodiment, the over-current protection circuit 124 includes a second turn-off circuit 1243 connected to the desaturation detection circuit 1241 to turn off the silicon carbide fet 130 according to the abnormal signal, so as to suppress the on-current.
Specifically, the second turn-off circuit 1243 includes a second field effect transistor T4, where a gate of the second field effect transistor is connected to an output terminal of the and gate in the desaturation detection circuit 1241, and a drain of the second field effect transistor is connected to a gate of the SiC MOSFET through a fourth resistor. When the desaturation detection circuit 1241 outputs a high-level current abnormality signal, the current abnormality signal turns on the second field effect transistor, pulls down the gate voltage, suppresses the gate current, and turns off the SiC MOSFET.
SiC MOSFETs have a certain overload bearing capacity in a short time, and for safety reasons, the reliability of the device is improved during practical application by means of the overvoltage protection circuit 122 and the overcurrent protection circuit 124.
In one embodiment, when the control signal is at a low level of-4V, the second inverter T2 is turned on and the gate current passes through the negative output resistorThe SiC MOSFET is turned off, at this time, the first field effect transistor T3 is turned on, and the current source +.>The voltage flowing through the first field effect transistor T3 enables the voltage at two ends of the detection capacitor to be clamped at a low level, and the comparator cannot overturn. When the control signal is at a high level of 20V, the first inverter T1 is turned on, and the gate current passes through the positive output resistor +.>The SiC MOSFET IS turned on, and the current source IS flows to the SiC MOSFET through the third resistor and the detection capacitor, and at this time, the comparator does not flip. When the drain current of the SiC MOSFET is +.>When the current threshold is greater than the voltage +.>Rapidly rise to DC bus voltage, detection diode +.>Reverse bias, current Source->Charging the detection capacitor C, turning over the comparator when the voltage of the detection capacitor reaches the preset voltage of the comparator, and outputting current through the OR gate and the AND gateAnd an abnormal signal, which turns off the first inverter T1, turns on the second inverter T2 and the second field effect transistor T4 according to the current abnormal signal, pulls down the gate voltage of the SiC MOSFET, and turns off the SiC MOSFET.
In one embodiment, the power circuit 121 includes a power module for receiving a driving power and converting the driving power into an output voltage; the voltage stabilizing circuit is connected with the power supply module and used for converting the output voltage into a voltage-stabilized power supply; and the driving chip is connected with the voltage stabilizing circuit and used for outputting the driving current according to the voltage stabilizing power supply.
Specifically, the power supply module converts a 15V driving power supply into +20V and-4V output voltages, the voltage stabilizing circuit keeps the output voltage stable, and the voltage stabilizing circuit provides stable output voltage for the driving chip, the driving chip outputs driving current according to the output voltage and the control signal, and the driving chip with the output driving current of-9A to +9A is selected in the embodiment.
In one embodiment, the driving circuit 120 further includes a photo coupler connected to the power circuit 121 for receiving a control signal from the control circuit 110 and reducing an output impedance of the control circuit 110.
Specifically, in order to avoid interference from the control circuit 110, the driving circuit 120 adds a photo-coupler as an isolation circuit to isolate the control circuit 110 from the driving circuit 120, and reduces the output impedance of the control circuit 110 by the photo-coupler, thereby avoiding interference from the control circuit 110.
In one embodiment, a driving apparatus is provided, including any of the driving circuits 120 of the above embodiments.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, drive circuit 120, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, drive circuit 120, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of additional identical elements in a process, drive circuit 120, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the application to enable those skilled in the art to understand or practice the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A driving circuit, characterized in that the driving circuit comprises:
a power supply circuit for supplying a driving current to the driving circuit;
the buffer circuit is connected with the power supply circuit and used for amplifying driving current according to the control signal, and the driving current is used for driving the silicon carbide field effect transistor;
the overvoltage protection circuit is used for inhibiting the conduction voltage of the silicon carbide field effect transistor when the conduction voltage is greater than or equal to a voltage threshold value;
the overcurrent protection circuit is used for inhibiting the on current of the silicon carbide field effect transistor when the on current is greater than or equal to a current threshold value;
the overvoltage protection circuit comprises a voltage stabilizing diode, a third diode and a shunt resistor, wherein the positive electrode of the voltage stabilizing diode is connected with the positive electrode of the third diode, the negative electrode of the voltage stabilizing diode is connected with the drain electrode of the silicon carbide field effect transistor, the shunt resistor comprises a first resistor and a second resistor, the first end of the first resistor is connected with the input end of the buffer, the second end of the first resistor is connected with the negative electrode of the third diode, the second end of the first resistor is also connected with the first end of the second resistor, and the second end of the second resistor is connected with the grid electrode of the silicon carbide field effect transistor;
when the drain-source voltage of the silicon carbide field effect transistor is greater than or equal to a voltage threshold value, reversely puncturing the zener diode, and shunting the puncture current puncturing the zener diode through the first resistor and the second resistor respectively, wherein the puncture current is shunted to the grid electrode of the silicon carbide field effect transistor through the second resistor; and the breakdown current is shunted to the input end of the buffer through the first resistor, and flows into the grid electrode of the silicon carbide field effect transistor after being amplified by the buffer.
2. The driver circuit of claim 1, wherein the buffer circuit comprises:
a buffer for amplifying the driving current according to the control signal;
and the grid resistor is connected with the buffer and used for reducing voltage spikes when the driving current drives the silicon carbide field effect transistor to be turned on or off.
3. The drive circuit according to claim 1, wherein the overcurrent protection circuit includes:
the desaturation detection circuit is used for detecting the conduction current of the silicon carbide field effect transistor, and generating a current abnormality signal when the conduction current is greater than or equal to a current threshold value, wherein the current abnormality signal is used for controlling the turn-off of the silicon carbide field effect transistor.
4. A driving circuit according to claim 3, wherein the desaturation detection circuit comprises:
the detection diode is used for reversely breaking down the detection diode when the drain current of the silicon carbide field effect transistor is greater than or equal to a current threshold value;
the detection capacitor is connected with the detection diode and is used for charging the detection capacitor according to a current source when the detection diode breaks down reversely;
and the comparator is connected with the detection capacitor and is used for outputting the current abnormality signal when the capacitance voltage of the detection capacitor is greater than or equal to a preset voltage.
5. The drive circuit of claim 3, wherein the over-current protection circuit further comprises:
the first turn-off circuit is connected with the desaturation detection circuit, turns off the buffer circuit according to the abnormal signal, turns off the silicon carbide field effect transistor through the buffer circuit, and inhibits the on current.
6. A driving circuit according to claim 3, wherein the overcurrent protection circuit comprises:
and the second turn-off circuit is connected with the desaturation detection circuit, turns off the silicon carbide field effect transistor according to the abnormal signal and inhibits the on current.
7. The drive circuit according to claim 1, wherein the power supply circuit includes:
the power supply module is used for receiving a driving power supply and converting the driving power supply into output voltage;
the voltage stabilizing circuit is connected with the power supply module and used for converting the output voltage into a voltage-stabilized power supply;
and the driving chip is connected with the voltage stabilizing circuit and used for outputting the driving current according to the voltage stabilizing power supply.
8. The drive circuit of claim 1, wherein the drive circuit further comprises:
and the photoelectric coupler is connected with the power supply circuit and is used for receiving a control signal from the control circuit and reducing the output impedance of the control circuit.
9. A driving device, characterized in that the driving device comprises a driving circuit comprising:
a power supply circuit for supplying a driving current to the driving circuit;
the buffer circuit is connected with the power supply circuit and used for amplifying driving current according to the control signal, and the driving current is used for driving the silicon carbide field effect transistor;
the overvoltage protection circuit is used for inhibiting the conduction voltage of the silicon carbide field effect transistor when the conduction voltage is greater than or equal to a voltage threshold value;
the overcurrent protection circuit is used for inhibiting the on current of the silicon carbide field effect transistor when the on current is greater than or equal to a current threshold value;
the overvoltage protection circuit comprises a voltage stabilizing diode, a third diode and a shunt resistor, wherein the positive electrode of the voltage stabilizing diode is connected with the positive electrode of the third diode, the negative electrode of the voltage stabilizing diode is connected with the drain electrode of the silicon carbide field effect transistor, the shunt resistor comprises a first resistor and a second resistor, the first end of the first resistor is connected with the input end of the buffer, the second end of the first resistor is connected with the negative electrode of the third diode, the second end of the first resistor is also connected with the first end of the second resistor, and the second end of the second resistor is connected with the grid electrode of the silicon carbide field effect transistor;
when the drain-source voltage of the silicon carbide field effect transistor is greater than or equal to a voltage threshold value, reversely puncturing the zener diode, and shunting the puncture current puncturing the zener diode through the first resistor and the second resistor respectively, wherein the puncture current is shunted to the grid electrode of the silicon carbide field effect transistor through the second resistor; and the breakdown current is shunted to the input end of the buffer through the first resistor, and flows into the grid electrode of the silicon carbide field effect transistor after being amplified by the buffer.
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