CN202424663U - IGBT (insulated gate bipolar transistor) driving protection circuit and IGBT driving protection system - Google Patents
IGBT (insulated gate bipolar transistor) driving protection circuit and IGBT driving protection system Download PDFInfo
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- CN202424663U CN202424663U CN2012200036442U CN201220003644U CN202424663U CN 202424663 U CN202424663 U CN 202424663U CN 2012200036442 U CN2012200036442 U CN 2012200036442U CN 201220003644 U CN201220003644 U CN 201220003644U CN 202424663 U CN202424663 U CN 202424663U
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Abstract
The utility model provides an IGBT (insulated gate bipolar transistor) driving protection circuit and an IGBT driving protection system. The IGBT driving protection circuit comprises a control chip, a driving voltage monitoring module and a short-circuit and overcurrent protection module. The driving voltage monitoring module is connected with the control chip and used for providing a voltage monitoring signal of a low electric level for the control chip when driving voltage of an IGBT is monitored and informed to be lower than preset voltage; the control chip is used for sending a first fault signal if the voltage monitoring signal of the low electric level is received so as to perform under-voltage protection treatment to the IGBT; and the control chip is also connected with the short-circuit and overcurrent protection module and used for receiving collector voltage and preset reference voltage of the IGBT, and if the collector voltage is informed to be higher than the preset reference voltage through comparison, then a duration indication signal of a fault signal is acquired from the short-circuit and overcurrent protection module, and finally a second fault signal is sent according to the duration indication signal of the fault signal so as to perform short-circuit and overcurrent protection treatment to the IGBT.
Description
Technical field
The utility model relates to the electronic device resist technology, relates in particular to a kind of IGBT of connecing Drive Protecting Circuit and system, belongs to electronic technology field.
Background technology
Insulated gate bipolar triode (Insulated Gate Bipolar Transistor; IGBT) have be prone to drive, high withstand voltage, current capacity big, at a high speed and low saturation pressure degradation superperformance; So obtained using very widely, for example be widely used in the equipment such as variable frequency power supply, motor adjustment and inverter type welder.
IGBT is the same with other electronic devices; Except that self the device performance that can provide; Practicality also depends on circuit condition and switch environment, and therefore how IGBT is driven and protects to guarantee reliable, the trouble free service of IGBT, be the difficult point and the key of IGBT circuit design.
The utility model content
The utility model provides a kind of IGBT Drive Protecting Circuit and system, in order to realize to IGBT carry out effectively, reliable driving voltage monitoring and short circuit, overcurrent protection.
According to the one side of the utility model, a kind of IGBT Drive Protecting Circuit is provided, comprise control chip, driving voltage monitoring modular and short circuit and overcurrent protection module, wherein:
Said driving voltage monitoring modular is connected with said control chip, and being used for provides low level voltage monitoring signal to said control chip when monitoring knows that the driving voltage of IGBT is lower than predeterminated voltage;
Said control chip is used for then sending first fault-signal if receive said low level voltage monitoring signal, handles so that the burst process module is carried out under-voltage protection according to said first fault-signal to said IGBT;
Said control chip also is connected with said short circuit and overcurrent protection module; Also be used to receive collector voltage and the preset reference voltage of said IGBT; If relatively know that said collector voltage is more than or equal to said preset reference voltage; Then obtain fault-signal duration index signal from said short circuit and overcurrent protection module; And send second fault-signal according to said fault-signal duration index signal, so that the burst process module according to said second fault-signal said IGBT is carried out short circuit and overcurrent protection is handled.
Further, in above-mentioned IGBT Drive Protecting Circuit, said control chip is the NE555 chip; Correspondingly, said NE555 chip is connected with said driving voltage monitoring modular through first pin, the 4th pin and the 8th pin; Receive said preset reference voltage through the 5th pin; Receive the collector voltage of said IGBT through the 6th pin; Through first pin, second pin, the 3rd pin and the 8th pin, be connected with said short circuit and overcurrent protection module; Export said first fault-signal and said second fault-signal through the 7th pin, the wherein said first pin ground connection GND, said the 8th pin connects with said driving voltage and is connected.
Further, in above-mentioned IGBT Drive Protecting Circuit, also comprise:
Be connected first electric capacity between said driving voltage and the said GND.
Further; In above-mentioned IGBT Drive Protecting Circuit; Said driving voltage monitoring modular comprises the positive-negative-positive triode, be connected first resistance between the base stage of said driving voltage and said positive-negative-positive triode, be connected second resistance between the emitter of said driving voltage and said positive-negative-positive triode, be connected the voltage-stabiliser tube between the base stage of said GND and said positive-negative-positive triode, and is connected the 3rd resistance between the collector electrode of said GND and said positive-negative-positive triode.
Further, in above-mentioned IGBT Drive Protecting Circuit, said short circuit and overcurrent protection module comprise the isolated gate FET and second electric capacity, wherein:
Said isolated gate FET is used for when said IGBT fault-free open-minded, and when opening, said second electric capacity is charged; When said IGBT has fault, end, and when ending, said second electric capacity is discharged;
Said second electric capacity is used under discharge condition, to said control chip fault-signal duration index signal is provided.
Further, in above-mentioned IGBT Drive Protecting Circuit, also comprise:
Be connected the 3rd electric capacity between said collector voltage and the GND.
According to the utility model on the other hand; A kind of IGBT drive protecting system also is provided; It is characterized in that; Comprise IGBT Drive Protecting Circuit that the utility model provides, be used for to said IGBT Drive Protecting Circuit provide driving voltage and the preset reference voltage of IGBT power module, be used for providing the gate-drive module of the collector voltage of IGBT to said IGBT Drive Protecting Circuit; And the burst process module that is connected with said IGBT Drive Protecting Circuit; Said burst process module is used to receive first fault-signal and/or second fault-signal that said IGBT Drive Protecting Circuit generates, and according to said first fault-signal and/or the second fault-signal locking pulse and turn-off said IGBT.
The IGBT Drive Protecting Circuit and the system that provide according to the utility model; Through the driving voltage monitoring modular that utilizes a control chip, is connected with control chip; And short circuit that is connected with control chip and overcurrent protection module, realized simultaneously the under-voltage protection of IGBT and short circuit, overcurrent protection.Because control chip itself has higher integrated level; The multinomial processing that it can provide reliably, accuracy is high, logic is comparatively complicated; Therefore when building the IGBT Drive Protecting Circuit; Only need to build the peripheral circuit that comprises the little electrons device, can realize efficient and high monitoring and the protection of reliability IGBT based on control chip.
Description of drawings
Fig. 1 is the structural representation of the utility model example I GBT Drive Protecting Circuit.
Fig. 2 is the physical circuit figure of the utility model example I GBT Drive Protecting Circuit.
Fig. 3 is the structural representation of the utility model example I GBT drive protecting system.
Embodiment
Fig. 1 is the structural representation of the utility model example I GBT Drive Protecting Circuit.As shown in Figure 1, this IGBT Drive Protecting Circuit comprises control chip 11, driving voltage monitoring modular 12 and short circuit and overcurrent protection module 13, wherein:
Driving voltage monitoring modular 12 is connected with said control chip 11, and being used for provides low level voltage monitoring signal to said control chip 11 when monitoring knows that the driving voltage of IGBT is lower than predeterminated voltage;
Said control chip 11 is used for then sending first fault-signal if receive said low level voltage monitoring signal, handles so that the burst process module is carried out under-voltage protection according to said first fault-signal to said IGBT;
Said control chip 11 also is connected with said short circuit and overcurrent protection module 13; Also be used to receive collector voltage and the preset reference voltage of said IGBT; If relatively know that said collector voltage is more than or equal to said preset reference voltage; Then obtain fault-signal duration index signal from said short circuit and overcurrent protection module 13; And send second fault-signal according to said fault-signal duration index signal, so that the burst process module according to said second fault-signal said IGBT is carried out short circuit and overcurrent protection is handled.
Above-mentioned first fault-signal and second fault-signal can be identical or different, do not do qualification here.
IGBT Drive Protecting Circuit according to the foregoing description; Through the driving voltage monitoring modular that utilizes a control chip, is connected with control chip; And short circuit that is connected with control chip and overcurrent protection module, realized simultaneously the under-voltage protection of IGBT and short circuit, overcurrent protection.Because control chip itself has higher integrated level; The multinomial processing that it can provide reliably, accuracy is high, logic is comparatively complicated; Therefore when building the IGBT Drive Protecting Circuit; Only need to build the peripheral circuit that comprises the little electrons device, can realize efficient and high monitoring and the protection of reliability IGBT based on control chip.
Further, in the IGBT of the foregoing description Drive Protecting Circuit, control chip is preferably the NE555 chip.
Wherein, the NE555 chip is the medium scale integrated circuit that a kind of digital circuit combines with analog circuit.This circuit uses flexibly, conveniently only needs external a spot of Resistor-Capacitor Unit just can constitute monostable flipflop and multivibrator etc., thereby is widely used in generation, conversion, control and the detection of signal.Its working method generally can reduce three types, that is: monostable, bistable state and do not have stable state.Wherein, monostable is mainly used in timer, eliminates shake, branch, frequency multiplication and pulse output etc.; Bistable state is mainly used in comparator, latch, inverter, square wave output and shaping etc.; No stable state is mainly used in square wave output, power conversion and timing etc.In the IGBT Drive Protecting Circuit of the foregoing description, the NE555 chip operates mainly in monostable and bistable state, is used for timer and comparator.
Fig. 2 is the physical circuit figure of the utility model example I GBT Drive Protecting Circuit.As shown in Figure 2,8 pins of NE555 chip are used to realize following connection: the NE555 chip is connected with the driving voltage monitoring modular through first pin, the 4th pin and the 8th pin; Receive preset reference voltage (Vref) through the 5th pin; Receive the collector voltage (Vce) of IGBT through the 6th pin; Through first pin, second pin, the 3rd pin and the 8th pin, be connected with short circuit and overcurrent protection module; Export first fault-signal and second fault-signal through the 7th pin, the first pin ground connection (GND) wherein, the 8th pin connects with driving voltage (VDD) and is connected.
More particularly; The driving voltage monitoring modular comprises the positive-negative-positive triode, be connected the first resistance (R1 between the base stage of said driving voltage and positive-negative-positive triode (VT1); For example for 1.5K Europe), be connected second resistance (R2 for example is 6.8K Europe) between the emitter of driving voltage VDD and positive-negative-positive triode VT1, be connected voltage-stabiliser tube between the base stage of ground connection GND and positive-negative-positive triode VT1 (Z1, for example use is integrated with the Z4 type voltage-stabiliser tube equipment of two voltage-stabiliser tubes; Can choose wherein any place in circuit; Another is vacant), and be connected the 3rd resistance (R3 for example is 100K Europe) between the collector electrode of ground connection GND and positive-negative-positive triode VT1.Wherein, the collector electrode of positive-negative-positive triode VT1 is connected with the 4th pin of NE555 chip, is used for according to the conducting of this positive-negative-positive triode VT1 or ends, and imports corresponding high level or low level to the 4th pin of NE555 chip.The 3rd resistance R 3 is as current-limiting resistance, and first resistance R 1, second resistance R 2 and voltage-stabiliser tube Z1 all are used to control the conducting of positive-negative-positive triode VT1 or end.
The driving voltage monitoring modular matches with the NE555 chip; The principle that realizes the driving voltage monitoring is following: driving voltage VDD is a voltage to be monitored, and driving voltage VDD also is the NE555 chip power supply simultaneously, when driving voltage VDD just often; Positive-negative-positive triode VT1 conducting, NE555 chip operate as normal; When driving voltage VDD crosses when low, positive-negative-positive triode VT1 ends, and the NE555 chip is in reset mode, this moment the NE555 chip the 7th pin output low level fault-signal, locking pulse also turn-offs IGBT.In this way, realized when driving voltage is in under-voltage condition, to the protection of IGBT.
Further, short circuit and overcurrent protection module comprise isolated gate FET (VT2 for example is the N channel enhancement metal-oxide-semiconductor of SS model) and second electric capacity (C2 for example is 330nF), wherein:
Isolated gate FET VT2 is open-minded when the IGBT fault-free, and charge to second capacitor C 2 this moment; And when IGBT has fault, end, discharge to second capacitor C 2 this moment.
More particularly, short circuit and overcurrent protection module also can comprise the 4th resistance (R4 for example is 33K), the 5th resistance (R5 for example is 10K) and the 6th resistance (R6 for example is 100K).Wherein, the 4th resistance R 4 and the 5th resistance R 5 are serially connected between first pin of grid and NE555 chip of isolated gate FET VT2, and the 4th resistance R 4 is connected with the emitter of positive-negative-positive triode VT1 with circuit between the 5th resistance R 5.The grid of isolated gate FET VT2 also directly is connected with the 3rd pin of NE555 chip; The outside corresponding level signal of output of the 3rd pin level signal that is used for receiving wherein according to the 4th pin; Promptly when the 4th pin receives high level because of positive-negative-positive triode VT1 conducting; Then the 3rd pin provides high level to the grid of isolated gate FET VT2, when the 4th pin because of positive-negative-positive triode VT1 when receiving low level, to the grid of isolated gate FET VT2 low level is provided.
In addition; The drain electrode of isolated gate FET VT2 is connected with driving voltage VDD; The source electrode of isolated gate FET VT2 passes through the 6th resistance R 6 ground connection GND, thereby makes when isolated gate FET VT2 conducting, can be to charging with the 6th resistance R 6 second parallelly connected capacitor C 2; And when isolated gate FET VT2 broke off, second capacitor C 2 was discharged.Because an end ground connection GND of second capacitor C 2, the other end is connected with second pin of NE555 chip, thus when discharging to the NE555 chip fault-signal duration index signal being provided through second pin, duration promptly discharges.It is thus clear that the resistance value through regulating the 6th resistance R 6 and the capacitance of second capacitor C 2 can be realized the adjusting to fault-signal duration index signal.
Through above-mentioned connection; Short circuit and overcurrent protection module match with the NE555 chip; The principle that realizes short circuit and overcurrent voltage protection is following: because collector voltage Vce and the collector current of IGBT are approximated to proportional relation, so adopt detection IGBT collector saturation voltage to judge IGBT whether overcurrent or short circuit.Preset reference voltage Vref is for example for to be provided by reference power supply, or adopts constant-current source connecting resistance form to provide, wherein when employing constant-current source connecting resistance form provides; Circuit is complicated; But be not subject to disturb, can increase the stability of circuit, so can be applicable to the high-power driving plate; When adopting reference power supply to provide, circuit is simpler, but anti-interference is relatively poor, so can be applicable to the small-power drive plate.When IGBT overcurrent or short circuit, collector voltage Vce rises, and reaches the limit value of crossing of user's setting as collector voltage Vce; When promptly reaching Vce more than or equal to preset reference voltage Vref, Drive Protecting Circuit work, the fault-signal of the 7th pin of NE555 chip (protect pin) output low level; Turn-off IGBT; And this fault-signal keeps a period of time, and the length of this time is the discharge duration of second capacitor C 2 in short circuit and the overcurrent protection module, the long at this moment interior input pulse that blocks.
In the IGBT of the foregoing description Drive Protecting Circuit; Through preset reference voltage Vref and collector voltage Vce being inserted two inputs of the comparator of NE555 chip; Promptly the 5th pin and the 6th pin are realized the comparison to these two magnitudes of voltage, and according to whether overcurrent or short circuit of comparative result IGBT; Thereby send corresponding fault-signal, realize effective overcurrent or short-circuit protection.
Further; Because IGBT is in conducting just but during unsaturation; Collector voltage Vce is very big, for preventing Drive Protecting Circuit misoperation this moment, can between collector voltage Vce that detects and ground connection GND, add the 3rd electric capacity (not shown) the protection response time is set; With in the protection response time, IGBT short circuit and overcurrent protection function are in disarmed state.
Further, in the IGBT of the foregoing description Drive Protecting Circuit, also comprise:
Be connected first electric capacity (C1 for example is 47nF) between driving voltage VDD and the ground connection GND, this first capacitor C 1 is as filter capacitor.
Fig. 3 is the structural representation of the utility model example I GBT drive protecting system.As shown in Figure 3; This IGBT drive protecting system comprise above-mentioned arbitrary embodiment IGBT Drive Protecting Circuit 31, be used for to IGBT Drive Protecting Circuit 31 provide driving voltage VDD and the preset reference voltage Vref of IGBT power module 32, be used for providing the gate-drive module 33 of the collector voltage Vce of IGBT to IGBT Drive Protecting Circuit 31; And the burst process module 34 that is connected with IGBT Drive Protecting Circuit 31; Burst process module 34 is used to receive first fault-signal and/or second fault-signal that IGBT Drive Protecting Circuit 31 generates, and according to first fault-signal and/or the second fault-signal locking pulse and turn-off IGBT.Power module 32 also can provide ground connection GND to IGBT Drive Protecting Circuit 31.
Particularly, power module 32 also can play buffer action, when for IGBT Drive Protecting Circuit 31 the driving voltage VDD and preset reference voltage Vref of IGBT being provided, also is gate- drive module 33 and 34 power supplies of burst process module.Gate-drive module 33 also can be used for the grid-control voltage that reliable conducting is provided and ends to IGBT.The pulse signal of 34 pairs of inputs of burst process module is isolated, and the dead band and the interlocking of upper and lower brachium pontis control impuls are set.
The IGBT drive protecting system of the foregoing description is identical with the IGBT Drive Protecting Circuit of previous embodiment to the concrete principle that IGBT accomplishes protection, so locate to repeat no more.
IGBT drive protecting system according to the foregoing description; Comprise a control chip, the driving voltage monitoring modular that is connected with control chip through utilization; And the IGBT Drive Protecting Circuit of short circuit that is connected with control chip and overcurrent protection module, realized simultaneously the under-voltage protection of IGBT and short circuit, overcurrent protection.Because control chip itself has higher integrated level; The multinomial processing that it can provide reliably, accuracy is high, logic is comparatively complicated; Therefore when building the IGBT Drive Protecting Circuit; Only need to build the peripheral circuit that comprises the little electrons device, can realize efficient and high monitoring and the protection of reliability IGBT based on control chip.
What should explain at last is: above each embodiment is only in order to the technical scheme of explanation the utility model, but not to its restriction; Although the utility model has been carried out detailed explanation with reference to previous embodiment; Those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these are revised or replacement, do not make the scope of each embodiment technical scheme of essence disengaging the utility model of relevant art scheme.
Claims (7)
1. an insulated gate bipolar triode IGBT Drive Protecting Circuit is characterized in that, comprises control chip, driving voltage monitoring modular and short circuit and overcurrent protection module, wherein:
Said driving voltage monitoring modular is connected with said control chip, and being used for provides low level voltage monitoring signal to said control chip when monitoring knows that the driving voltage of IGBT is lower than predeterminated voltage;
Said control chip is used for then sending first fault-signal if receive said low level voltage monitoring signal, handles so that the burst process module is carried out under-voltage protection according to said first fault-signal to said IGBT;
Said control chip also is connected with said short circuit and overcurrent protection module; Also be used to receive collector voltage and the preset reference voltage of said IGBT; If relatively know that said collector voltage is more than or equal to said preset reference voltage; Then obtain fault-signal duration index signal from said short circuit and overcurrent protection module; And send second fault-signal according to said fault-signal duration index signal, so that the burst process module according to said second fault-signal said IGBT is carried out short circuit and overcurrent protection is handled.
2. IGBT Drive Protecting Circuit according to claim 1 is characterized in that, said control chip is the NE555 chip; Correspondingly, said NE555 chip is connected with said driving voltage monitoring modular through first pin, the 4th pin and the 8th pin; Receive said preset reference voltage through the 5th pin; Receive the collector voltage of said IGBT through the 6th pin; Through first pin, second pin, the 3rd pin and the 8th pin, be connected with said short circuit and overcurrent protection module; Export said first fault-signal and said second fault-signal through the 7th pin, the wherein said first pin ground connection GND, said the 8th pin connects with said driving voltage and is connected.
3. IGBT Drive Protecting Circuit according to claim 1 and 2 is characterized in that, also comprises:
Be connected first electric capacity between said driving voltage and the said GND.
4. IGBT Drive Protecting Circuit according to claim 1 and 2; It is characterized in that; Said driving voltage monitoring modular comprises the positive-negative-positive triode, be connected first resistance between the base stage of said driving voltage and said positive-negative-positive triode, be connected second resistance between the emitter of said driving voltage and said positive-negative-positive triode, be connected the voltage-stabiliser tube between the base stage of said GND and said positive-negative-positive triode, and is connected the 3rd resistance between the collector electrode of said GND and said positive-negative-positive triode.
5. IGBT Drive Protecting Circuit according to claim 1 and 2 is characterized in that, said short circuit and overcurrent protection module comprise the isolated gate FET and second electric capacity, wherein:
Said isolated gate FET is used for when said IGBT fault-free open-minded, and when opening, said second electric capacity is charged; When said IGBT has fault, end, and when ending, said second electric capacity is discharged;
Said second electric capacity is used under discharge condition, to said control chip fault-signal duration index signal is provided.
6. IGBT Drive Protecting Circuit according to claim 1 and 2 is characterized in that, also comprises:
Be connected the 3rd electric capacity between said collector voltage and the GND.
7. IGBT drive protecting system; It is characterized in that; Comprise as the arbitrary described IGBT Drive Protecting Circuit of claim 1 to 6, be used for to said IGBT Drive Protecting Circuit provide driving voltage and the preset reference voltage of IGBT power module, be used for providing the gate-drive module of the collector voltage of IGBT to said IGBT Drive Protecting Circuit; And the burst process module that is connected with said IGBT Drive Protecting Circuit; Said burst process module is used to receive first fault-signal and/or second fault-signal that said IGBT Drive Protecting Circuit generates, and according to said first fault-signal and/or the second fault-signal locking pulse and turn-off said IGBT.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200036442U CN202424663U (en) | 2012-01-06 | 2012-01-06 | IGBT (insulated gate bipolar transistor) driving protection circuit and IGBT driving protection system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200036442U CN202424663U (en) | 2012-01-06 | 2012-01-06 | IGBT (insulated gate bipolar transistor) driving protection circuit and IGBT driving protection system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199832A (en) * | 2012-01-06 | 2013-07-10 | 中国北车股份有限公司大连电力牵引研发中心 | Insulated gate bipolar transistor (IGBT) driving protection circuit and system |
| CN105991116A (en) * | 2015-02-03 | 2016-10-05 | 佛山市顺德区美的电热电器制造有限公司 | Driving circuit and electronic apparatus |
| US10638551B2 (en) | 2015-02-02 | 2020-04-28 | Foshan Shunde Midea Electrical Heating Appliances Manufacturing Co., Ltd | Electromagnetic heating control circuit and electromagnetic heating device |
| CN111157824A (en) * | 2020-01-06 | 2020-05-15 | 珠海格力电器股份有限公司 | Fault determination device, intelligent power module and fault determination method thereof |
-
2012
- 2012-01-06 CN CN2012200036442U patent/CN202424663U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199832A (en) * | 2012-01-06 | 2013-07-10 | 中国北车股份有限公司大连电力牵引研发中心 | Insulated gate bipolar transistor (IGBT) driving protection circuit and system |
| CN103199832B (en) * | 2012-01-06 | 2015-11-25 | 中国北车股份有限公司 | IGBT Drive Protecting Circuit and system |
| US10638551B2 (en) | 2015-02-02 | 2020-04-28 | Foshan Shunde Midea Electrical Heating Appliances Manufacturing Co., Ltd | Electromagnetic heating control circuit and electromagnetic heating device |
| CN105991116A (en) * | 2015-02-03 | 2016-10-05 | 佛山市顺德区美的电热电器制造有限公司 | Driving circuit and electronic apparatus |
| CN111157824A (en) * | 2020-01-06 | 2020-05-15 | 珠海格力电器股份有限公司 | Fault determination device, intelligent power module and fault determination method thereof |
| CN111157824B (en) * | 2020-01-06 | 2021-03-02 | 珠海格力电器股份有限公司 | Fault determination device, intelligent power module and fault determination method thereof |
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Owner name: CHINA CNR CORPORATION LIMITED Free format text: FORMER OWNER: DALIAN ELECTRIC TRACTION RESEARCH + DEVELOPMENT CENTER OF CHINA NORTH LOCOMOTIVE CO., LTD. Effective date: 20140312 |
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Effective date of registration: 20140312 Address after: 100078 Beijing Fengtai District city park is a district 15 building Patentee after: China CNR Corporation Limited Address before: 116022 Shahekou, Liaoning, China No. 51 The Strip Patentee before: Dalian Electric Traction Research & Development Center of China North Locomotive Co., Ltd. |
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