CN103346538B - A kind of short-circuit protection circuit for APF high-power IGBT - Google Patents
A kind of short-circuit protection circuit for APF high-power IGBT Download PDFInfo
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Abstract
The invention discloses a kind of short-circuit protection circuit for APF high-power IGBT, comprise the working control circuit of IGBT, for control IGBT work whether; The short-circuit protection circuit of IGBT, for monitoring IGBT short circuit current, and utilizes slowly reduction grid voltage circuit to prevent IGBT short circuit from causing overvoltage and damaging IGBT.Whether the working control circuit that the short-circuit protection circuit of described IGBT comprises short-circuit protection circuit for controlling the work of short-circuit protection circuit; The testing circuit of short-circuit protection circuit, for detecting the voltage of IGBT; Slow reduction grid voltage circuit, for slowly reducing grid voltage; Reset circuit is latched in protection, for carrying out protection locking to PWM, turns off IGBT completely.The present invention has raising operating circuit reliability, takes the soft switching mode slowly reducing IGBT grid voltage to reduce superpotential advantage during shutoff when being short-circuited.
Description
Technical field
The invention belongs to power electronics Control protection field, particularly relate to a kind of short-circuit protection circuit for APF high-power IGBT.
Background technology
Since first MOSFET and IGBT comes out in the world, voltage-controlled type power electronic device particularly IGBT is just experiencing the process of a develop rapidly.The voltage of IGBT single module device does higher and higher, and electric current does larger and larger.Meanwhile, supporting with it driving element have also been obtained to be greatly developed.Along with device application field is more and more wider, power-supply device transform power is increasing, especially in harmonic wave control, Active Power Filter-APF adopts IGBT switch motion compensation harmonic, when IGBT is short-circuited, general speed is adopted to block grid voltage, too high current changing rate di/dt can cause overvoltage, high pressure may make IGBT that locking phenomena occurs and cause the problem of damage, generally for and avoid short-circuit protection to cause overvoltage and damage IGBT, generally take to increase and drive resistance, prolongation turn-off time and bus add pop wave absorbing circuit, but increase and drive resistance also can increase switching loss, affect waveform quality, functional reliability is reduced, in order to improve operating circuit reliability, take the soft switching mode slowly reducing IGBT grid voltage to reduce overvoltage during shutoff when being short-circuited.
Summary of the invention
Object of the present invention is exactly to solve the problem; a kind of short-circuit protection circuit for APF high-power IGBT is provided; it has improves operating circuit reliability, takes the soft switching mode slowly reducing IGBT grid voltage to reduce superpotential advantage during shutoff when being short-circuited.
To achieve these goals, the present invention adopts following technical scheme:
For a short-circuit protection circuit for APF high-power IGBT, comprise
Whether the working control circuit of IGBT, utilize the work of pwm signal control IGBT;
The short-circuit protection circuit of IGBT, for monitoring IGBT short circuit current, and under pwm signal controls in short circuit time utilize and slowly reduce grid voltage circuit and prevent IGBT short circuit from causing overvoltage and damage IGBT.
The short-circuit protection circuit of described IGBT comprises:
Whether the working control circuit of short-circuit protection circuit, for controlling the work of short-circuit protection circuit;
The testing circuit of short-circuit protection circuit, for detecting the short circuit current of IGBT;
Slow reduction grid voltage circuit, for slowly reducing grid voltage;
Reset circuit is latched in protection, for carrying out protection locking to the state of slow step-down, until turn off IGBT completely.
The working control circuit of described IGBT comprises IGBT and normally opens part and IGBT normal turn-off control section;
Described IGBT normally opens part and comprises 2N5401 triode Q10, MJD44H11 triode Q5, raster data model resistance RG; The base stage of described MJD44H11 triode Q5 connects PWM drive unit, the collector electrode of described MJD44H11 triode Q5 meets+15V TOP, the emitter of described MJD44H11 triode Q5 connects the base stage of IGBT by raster data model resistance RG, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
Described IGBT normal turn-off control section comprises 2N5401 triode Q10, MJD45H11 triode Q8, raster data model resistance RG; The base stage of described MJD45H11 triode Q8 connects PWM drive unit, the collector electrode of described MJD45H11 triode Q8 meets-5V TOP, the emitter of described MJD45H11 triode Q8 connects the base stage of IGBT by raster data model resistance RG, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
The working control circuit of described short-circuit protection circuit; comprise 2N5401 triode Q10; the base stage of described 2N5401 triode Q10 connects PWM drive unit, the grounded collector of described 2N5401 triode Q10, and the emitter of described 2N5401 triode Q10 meets+15V TOP by resistance R12.
The testing circuit of described short-circuit protection circuit; comprise BY203/20S diode D2, voltage stabilizing didoe DV2, electric capacity C5 and resistance R12; the negative pole of described BY203/20S diode D2 connects the collector electrode of IGBT; the positive pole of described BY203/20S diode D2 meets+15V TOP by resistance R12; the positive pole of described BY203/20S diode D2 is also by electric capacity C5 ground connection; the positive pole of described BY203/20S diode D2 is also connected with the negative pole of voltage stabilizing didoe DV2, and the positive pole of described voltage stabilizing didoe DV2 connects and slowly reduces grid voltage circuit.
Described slow reduction grid voltage circuit, comprise 2N3904 triode Q9, TLP521-1 photoelectrical coupler U1, resistance R17, resistance R14, electric capacity C4, IN4148 diode D3, PBSS3540M triode Q6, resistance R26, the base stage of described 2N3904 triode Q9 is connected to the positive pole of described voltage stabilizing didoe DV2, the grounded emitter of described 2N3904 triode Q9, the collector electrode of described 2N3904 triode Q9 connects the 2nd pin of TLP521-1 photoelectrical coupler U1, the 3rd pin ground connection of described TLP521-1 photoelectrical coupler U1, the 1st pin connecting resistance R17 of described TLP521-1 photoelectrical coupler U1, 4th pin of described TLP521-1 photoelectrical coupler U1 connects protection and latches reset circuit, described resistance R17 meets+15VTOP by resistance R14, described resistance R14 is also in parallel with electric capacity C4, described resistance R14 is also in parallel with IN4148 diode D3, the negative pole of described IN4148 diode D3 is connected to+15V TOP, the positive pole of described IN4148 diode D3 is connected to the base stage of PBSS3540M triode Q6, the grounded collector of described PBSS3540M triode Q6, the emitter of described PBSS3540M triode Q6 connects the emitter of MJD44H11 triode Q5 and the emitter of MJD45H11 triode Q8 by resistance R26.
Described protection is latched reset circuit and is comprised HCF4013BM1 latch U27, electric capacity C218, resistance R21, 4th pin of described HCF4013BM1 latch U27 is by electric capacity C218 ground connection, 4th pin of described HCF4013BM1 latch U27 connects+5V voltage by resistance R21, 4th pin of described HCF4013BM1 latch U27 also receives the 4th pin of described TLP521-1 photoelectrical coupler U1, 3rd pin of described HCF4013BM1 latch U27 and the 5th pin all ground connection of HCF4013BM1 latch U27, 1st pin of described HCF4013BM1 latch U27 connects PWM LOCK, 6th pin of described HCF4013BM1 latch U27 connects+5V voltage by reset switch, 6th pin of described HCF4013BM1 latch U27 is also by electric capacity C109 in parallel and resistance R116 ground connection.
Resistance R12 resistance is 2.2 kilo-ohms, and electric capacity C5 capacitance is 4.7nF, and triode Q10 is 2N5401, and triode Q5 is MJD44H11, and triode Q8 is MJD45H11.The model of photoelectrical coupler U1 is TIP521; the model of latch U27 is that HCF4013BM1 fault-signal latches; voltage stabilizing didoe DV2 is IGBT short-circuit protection voltage reference value; electric capacity C5 electric capacity is protection effective delay electric capacity, and wherein electric capacity C4, resistance R17 are photoelectrical coupler U1 secondary conducting delay time.
Resistance R14, resistance R17 resistance are 1 kilo-ohm, electric capacity C4 capacitance is 20nF, diode D3 model is 1N4148, and resistance R21 resistance is 10 kilo-ohms, and electric capacity C218 capacitance is 0.1uF, diode D2 model is BY203/20S, electric capacity C109 capacitance is 0.1uF, and resistance R116 resistance is 10 kilo-ohms, and triode Q6 model is PBSS3540M, resistance R26 resistance is 220 Europe, and latch U27A model is HCF4013BM1.
Beneficial effect of the present invention:
1, by introducing grid soft switching technology, both slowly reduces the mode of grid voltage, and rational driving mode, can improve the reliability of equipment work.
2 improve operating circuit reliability, take the soft switching mode slowly reducing IGBT grid voltage to reduce overvoltage during shutoff when being short-circuited.
3 use driving protection module cost compare high, use program cost low.
The time of 4 soft switching and protection is controlled respectively, improves the accuracy of protection.
5 increase protection efficient circuit part avoids protection by mistake.
Accompanying drawing explanation
Fig. 1 is a kind of IGBT short-circuit protection schematic diagram.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the invention will be further described.
As shown in Figure 1, a kind of short-circuit protection circuit for APF high-power IGBT, comprises
The working control circuit of IGBT, for control IGBT work whether;
The short-circuit protection circuit of IGBT, for monitoring IGBT short circuit current, and utilizes slowly reduction grid voltage circuit to prevent IGBT short circuit from causing overvoltage and damaging IGBT.
The short-circuit protection circuit of described IGBT comprises
Whether the working control circuit of short-circuit protection circuit for controlling the work of short-circuit protection circuit;
The testing circuit of short-circuit protection circuit, for detecting the voltage of IGBT;
Slow reduction grid voltage circuit, for slowly reducing grid voltage;
Reset circuit is latched in protection, for carrying out protection locking to PWM, turns off IGBT completely.
The working control circuit of described IGBT comprises IGBT and normally opens part and IGBT normal turn-off control section;
Described IGBT normally opens part and comprises 2N5401 triode Q10, MJD44H11 triode Q5, raster data model resistance RG; The base stage of described MJD44H11 triode Q5 connects PWM drive unit, the collector electrode of described MJD44H11 triode Q5 meets+15V TOP, the emitter of described MJD44H11 triode Q5 connects the base stage of IGBT by raster data model resistance RG, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
Described IGBT normal turn-off control section comprises 2N5401 triode Q10, MJD45H11 triode Q8, raster data model resistance RG; The base stage of described MJD45H11 triode Q8 connects PWM drive unit, the collector electrode of described MJD45H11 triode Q8 meets-5V TOP, the emitter of described MJD45H11 triode Q8 connects the base stage of IGBT by raster data model resistance RG, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
The working control circuit of described short-circuit protection circuit; comprise 2N5401 triode Q10; the base stage of described 2N5401 triode Q10 connects PWM drive unit, the grounded collector of described 2N5401 triode Q10, and the emitter of described 2N5401 triode Q10 meets+15V TOP by resistance R12.
The testing circuit of described short-circuit protection circuit; comprise BY203/20S diode D2, voltage stabilizing didoe DV2, electric capacity C5 and resistance R12; the negative pole of described BY203/20S diode D2 connects the collector electrode of IGBT; the positive pole of described BY203/20S diode D2 meets+15V TOP by resistance R12; the positive pole of described BY203/20S diode D2 is also by electric capacity C5 ground connection; the positive pole of described BY203/20S diode D2 is also connected with the negative pole of voltage stabilizing didoe DV2, and the positive pole of described voltage stabilizing didoe DV2 connects and slowly reduces grid voltage circuit.
Described slow reduction grid voltage circuit, comprise 2N3904 triode Q9, TLP521-1 photoelectrical coupler U1, resistance R17, resistance R14, electric capacity C4, IN4148 diode D3, PBSS3540M triode Q6, resistance R26, the base stage of described 2N3904 triode Q9 is connected to the positive pole of described voltage stabilizing didoe DV2, the grounded emitter of described 2N3904 triode Q9, the collector electrode of described 2N3904 triode Q9 connects the 2nd pin of TLP521-1 photoelectrical coupler U1, the 3rd pin ground connection of described TLP521-1 photoelectrical coupler U1, the 1st pin connecting resistance R17 of described TLP521-1 photoelectrical coupler U1, 4th pin of described TLP521-1 photoelectrical coupler U1 connects protection and latches reset circuit, described resistance R17 meets+15VTOP by resistance R14, described resistance R14 is also in parallel with electric capacity C4, described resistance R14 is also in parallel with IN4148 diode D3, the negative pole of described IN4148 diode D3 is connected to+15V TOP, the positive pole of described IN4148 diode D3 is connected to the base stage of PBSS3540M triode Q6, the grounded collector of described PBSS3540M triode Q6, the emitter of described PBSS3540M triode Q6 connects the emitter of MJD44H11 triode Q5 and the emitter of MJD45H11 triode Q8 by resistance R26.
Described protection is latched reset circuit and is comprised HCF4013BM1 latch U27, electric capacity C218, resistance R21, 4th pin of described HCF4013BM1 latch U27 is by electric capacity C218 ground connection, 4th pin of described HCF4013BM1 latch U27 connects+5V voltage by resistance R21, 4th pin of described HCF4013BM1 latch U27 also receives the 4th pin of described TLP521-1 photoelectrical coupler U1, 3rd pin of described HCF4013BM1 latch U27 and the 5th pin all ground connection of HCF4013BM1 latch U27, 1st pin of described HCF4013BM1 latch U27 connects PWM LOCK, 6th pin of described HCF4013BM1 latch U27 connects+5V voltage by reset switch, 6th pin of described HCF4013BM1 latch U27 is also by electric capacity C109 in parallel and resistance R116 ground connection.
IGBT normally opens part and is made up of triode Q10, triode Q5, raster data model resistance RG, and when PWM drives as high level, triode Q10 ends, triode Q5 conducting.IGBT normal turn-off control section is made up of triode Q10, triode Q8, raster data model resistance RG, and triode Q10 is that Control protection action effectively opens shutdown switch.IGBT protection act and hold reset part are by diode D2, resistance R12, electric capacity C5, voltage stabilizing didoe DV2, triode Q9, photoelectrical coupler U1, resistance R14, resistance R17, electric capacity C4, diode D3, triode Q6, resistance R26, reset switch S2, electric capacity C109, resistance R116, latch U27A, electric capacity C218, resistance R21 forms, TIP521 photoelectrical coupler U1 signal-isolated transmission, HCF4013BM1 latch U27 fault-signal latches, voltage stabilizing didoe DV2 is IGBT short-circuit protection voltage reference value, electric capacity C5 is protection effective delay electric capacity, electric capacity C4, resistance R17, diode D3, triode Q6 slowly reduces grid voltage part, wherein electric capacity C4, resistance R17 is photoelectrical coupler U1 optical coupling secondary edges conducting delay time.Reset switch S2, electric capacity C109, resistance R116 are that fault-signal resets.
The present invention is that a kind of method of APF high-power IGBT short-circuit protection damages IGBT for preventing IGBT short-circuit protection from causing overvoltage, overvoltage when reducing shutoff by the soft switching mode reducing IGBT grid voltage.
As shown in Figure 1:
IGBT normally opens some work process, when pwm signal is high level, triode Q10 ends, drive triode Q5 conducting, gate drive signal is+15V TOP, current collection very+15V the TOP of triode Q10, protective circuit is effective, electric capacity C5 starts charging by resistance R12, voltage stabilizing didoe DV2 voltage rise, the division of a ci poem threshold voltage value of voltage stabilizing didoe DV2 is set as IGBT (VCE) short-circuit protection value, when the normal pressure drop of setting IGBT conducting is set as 2V, when short circuit value voltage stabilizing didoe DV2 is set as 5V, electric capacity C5 capacitance is 4.7Nf, R12 is 2.2 kilohms, the time being arrived 5V by resistance R2 charging is t,
wherein, resistance R=R12, electric capacity C=C5, E=+15V, voltage V=5V, time t=4us, and IGBT service time is 1.5Us, therefore after IGBT opens, voltage stabilizing didoe DV2 reverse voltage is 3V, do not reach voltage stabilizing didoe DV2 division of a ci poem threshold voltage, voltage stabilizing didoe DV2 not conducting, IGBTQ7 is normally open-minded.
IGBT normal turn-off control section process; when PWM is low level; triode Q10 conducting, drive triode Q8 conducting, gate drive signal is-5V; triode Q10 current collection very low level; IGBT protection circuit is ended, and voltage stabilizing didoe DV2 reverse voltage becomes low, and electric capacity C5 is discharged by triode Q10; because gate drive signal is-5V, therefore IGBTQ7 turns off.
IGBT protection act and hold reset process, when IGBT Q7 is short-circuited, triode Q7 saturation voltage drop Vce rises, voltage stabilizing didoe DV2 voltage rise, after rising to voltage stabilizing didoe DV2 division of a ci poem threshold voltage, voltage stabilizing didoe DV2 conducting, triode Q9 conducting, electric capacity C4 is charged by resistance R17, diode D3, triode Q6 conducting, IGBTQ7 grid voltage progressively reduces, slow reduction grid voltage, after electric capacity C4 electric current increases to the division of a ci poem threshold voltage of photoelectrical coupler U1, the conducting of photoelectrical coupler U1 secondary, photoelectrical coupler U1 the 4th pin is low level, latch U27A the 4th pin is low, latch U27A the 1st pin is high and keeps PWM to protect locking, IGBT turns off completely, photoelectrical coupler U1 TLP521 optocoupler delay time 2us, it is 1.32us that electric capacity C4 reaches delay time needed for 1mA by resistance R17 electric current, wherein electric capacity C4 is capacitance is 20nF, resistance R17 is 1 kilohm, therefore when the complete cut-off signals of IGBT-5V arrives, the grid voltage of the time IGBT Q7 of 3us is had slowly to be reduced to 0V, after this PWM protection locking, IGBT is completely switched off.When fault-signal is not eliminated, latch U27A keeps locking, after fault-signal is eliminated, namely when latch U27A the 4th pin is high, by pressing reset switch S2 to latch U27A the 6th pin+5V_A high level signal, latch U27A the 1st pin becomes low level, and latch U27A has resetted.
By reference to the accompanying drawings the specific embodiment of the present invention is described although above-mentioned; but not limiting the scope of the invention; one of ordinary skill in the art should be understood that; on the basis of technical scheme of the present invention, those skilled in the art do not need to pay various amendment or distortion that creative work can make still within protection scope of the present invention.
Claims (7)
1. for a short-circuit protection circuit for APF high-power IGBT, it is characterized in that, comprise
Whether the working control circuit of IGBT, utilize the work of pwm signal control IGBT;
The short-circuit protection circuit of IGBT, for monitoring IGBT short circuit current, and under pwm signal controls in short circuit time utilize and slowly reduce grid voltage circuit and prevent IGBT short circuit from causing overvoltage and damage IGBT;
The short-circuit protection circuit of described IGBT comprises:
Whether the working control circuit of short-circuit protection circuit, for controlling the work of short-circuit protection circuit;
The testing circuit of short-circuit protection circuit, for detecting the short circuit current of IGBT;
Slow reduction grid voltage circuit, for slowly reducing grid voltage;
Reset circuit is latched in protection, for carrying out protection locking to the state of slow step-down, until turn off IGBT completely;
The testing circuit of described short-circuit protection circuit, comprise BY203/20S diode D2, voltage stabilizing didoe DV2, electric capacity C5 and resistance R12, the negative pole of described BY203/20S diode D2 connects the collector electrode of IGBT, the positive pole of described BY203/20S diode D2 meets+15V TOP by resistance R12, the positive pole of described BY203/20S diode D2 is also by electric capacity C5 ground connection, the positive pole of described BY203/20S diode D2 is also connected with the negative pole of voltage stabilizing didoe DV2, and the positive pole of described voltage stabilizing didoe DV2 connects and slowly reduces grid voltage circuit;
Described slow reduction grid voltage circuit, comprise 2N3904 triode Q9, TLP521-1 photoelectrical coupler U1, resistance R17, resistance R14, electric capacity C4, IN4148 diode D3, PBSS3540M triode Q6, resistance R26, the base stage of described 2N3904 triode Q9 is connected to the positive pole of described voltage stabilizing didoe DV2, the grounded emitter of described 2N3904 triode Q9, the collector electrode of described 2N3904 triode Q9 connects the 2nd pin of TLP521-1 photoelectrical coupler U1, the 3rd pin ground connection of described TLP521-1 photoelectrical coupler U1, the 1st pin connecting resistance R17 of described TLP521-1 photoelectrical coupler U1, 4th pin of described TLP521-1 photoelectrical coupler U1 connects protection and latches reset circuit, described resistance R17 meets+15VTOP by resistance R14, described resistance R14 is also in parallel with electric capacity C4, described resistance R14 is also in parallel with IN4148 diode D3, the negative pole of described IN4148 diode D3 is connected to+15V TOP, the positive pole of described IN4148 diode D3 is connected to the base stage of PBSS3540M triode Q6, the grounded collector of described PBSS3540M triode Q6, the emitter of described PBSS3540M triode Q6 connects the emitter of MJD44H11 triode Q5 and the emitter of MJD45H11 triode Q8 by resistance R26.
2. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, is characterized in that, the working control circuit of described IGBT comprises IGBT and normally opens part and IGBT normal turn-off control section;
Described IGBT normally opens part and comprises 2N5401 triode Q10, MJD44H11 triode Q5, raster data model resistance RG; The base stage of described MJD44H11 triode Q5 connects PWM drive unit, the collector electrode of described MJD44H11 triode Q5 meets+15V TOP, the emitter of described MJD44H11 triode Q5 connects the base stage of IGBT by raster data model resistance RG, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
3. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 2, it is characterized in that, described IGBT normal turn-off control section comprises 2N5401 triode Q10, MJD45H11 triode Q8, raster data model resistance RG; The base stage of described MJD45H11 triode Q8 connects PWM drive unit, and the collector electrode of described MJD45H11 triode Q8 meets-5VTOP, and the emitter of described MJD45H11 triode Q8 connects the base stage of IGBT by raster data model resistance RG.
4. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1; it is characterized in that; the working control circuit of described short-circuit protection circuit; comprise 2N5401 triode Q10; the base stage of described 2N5401 triode Q10 connects PWM drive unit; the grounded collector of described 2N5401 triode Q10, the emitter of described 2N5401 triode Q10 meets+15V TOP by resistance R12.
5. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, it is characterized in that, described protection is latched reset circuit and is comprised HCF4013BM1 latch U27, electric capacity C218, resistance R21, 4th pin of described HCF4013BM1 latch U27 is by electric capacity C218 ground connection, 4th pin of described HCF4013BM1 latch U27 connects+5V voltage by resistance R21, 4th pin of described HCF4013BM1 latch U27 also receives the 4th pin of described TLP521-1 photoelectrical coupler U1, 3rd pin of described HCF4013BM1 latch U27 and the 5th pin all ground connection of HCF4013BM1 latch U27, 1st pin of described HCF4013BM1 latch U27 connects PWM LOCK, 6th pin of described HCF4013BM1 latch U27 connects+5V voltage by reset switch, 6th pin of described HCF4013BM1 latch U27 is also by electric capacity C109 in parallel and resistance R116 ground connection.
6. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, it is characterized in that, resistance R12 resistance is 2.2 kilo-ohms, and electric capacity C5 capacitance is 4.7nF.
7. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 5; it is characterized in that; resistance R14, resistance R17 resistance are 1 kilo-ohm; electric capacity C4 capacitance is 20nF; resistance R21 resistance is 10 kilo-ohms, and electric capacity C218 capacitance is 0.1uF, and electric capacity C109 capacitance is 0.1uF; resistance R116 resistance is 10 kilo-ohms, and resistance R26 resistance is 220 Europe.
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| CN106099864B (en) * | 2016-07-19 | 2018-04-24 | 东南大学 | A kind of short-circuit protection method and its circuit of IGBT device for power switching |
| US10525841B2 (en) * | 2016-10-12 | 2020-01-07 | Ford Global Technologies, Llc | Gate driver with short circuit protection |
| US10480370B2 (en) * | 2017-08-22 | 2019-11-19 | GM Global Technology Operations LLC | Dual power supply for eCAT and control |
| CN109981089B (en) * | 2019-04-08 | 2023-12-08 | 广东安朴电力技术有限公司 | IGBT drive protection system |
| CN113765070B (en) * | 2020-06-01 | 2024-01-23 | 中车株洲电力机车研究所有限公司 | IGBT short-circuit protection circuit and method based on inductance current change rate |
| CN112531652A (en) * | 2020-12-16 | 2021-03-19 | 哈尔滨理工大学 | Overvoltage protection device applied to active power filter |
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| CN203491683U (en) * | 2013-07-24 | 2014-03-19 | 国家电网公司 | Short-circuit protecting circuit for large-power IGBT of APF |
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| Publication number | Publication date |
|---|---|
| CN103346538A (en) | 2013-10-09 |
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