CN103346538B - A kind of short-circuit protection circuit for APF high-power IGBT - Google Patents

Abstract

The invention discloses a short-circuit protection circuit for APF high-power IGBT, which includes an IGBT work control circuit for controlling whether the IGBT is working or not; an IGBT short-circuit protection circuit for monitoring the IGBT short-circuit current, and using a slow reduction The gate voltage circuit prevents the IGBT from being damaged due to overvoltage caused by a short circuit. The short-circuit protection circuit of the IGBT includes a working control circuit of the short-circuit protection circuit for controlling the operation of the short-circuit protection circuit; a detection circuit of the short-circuit protection circuit for detecting the voltage of the IGBT; a circuit for slowly reducing the gate voltage, using It is used to slowly reduce the gate voltage; the protection latch reset circuit is used to protect and lock the PWM and completely turn off the IGBT. The invention has the advantages of improving the reliability of the working circuit and adopting a soft shut-off mode of slowly reducing the grid voltage of the IGBT to reduce the overvoltage when the shut-off occurs when a short circuit occurs.

Description

A short-circuit protection circuit for APF high-power IGBT

technical field

The invention belongs to the field of power electronic control and protection, in particular to a short-circuit protection circuit for APF high-power IGBT.

Background technique

Since the world's first MOSFET and IGBT came out, voltage-controlled power electronic devices, especially IGBT, are undergoing a rapid development process. The voltage of the IGBT single-module device is getting higher and higher, and the current is getting bigger and bigger. At the same time, the supporting drive devices have also been vigorously developed. As the device application field becomes wider and wider, the conversion power of the power supply equipment is getting larger and larger, especially in the aspect of harmonic control, the active power filter uses the IGBT switching action to compensate the harmonic, and when the IGBT is short-circuited, it adopts the general speed blocking Gate voltage, too high current change rate di/dt will cause overvoltage, and high voltage may cause IGBT to lock and cause damage. Usually, in order to avoid short-circuit protection causing overvoltage and damage to IGBT, generally increase the drive resistance. Prolong the off time and add a surge absorbing circuit to the bus, but increasing the driving resistance will also increase the switching loss, affect the waveform quality, and reduce the working reliability. In order to improve the working circuit reliability, slowly lower the IGBT grid The soft turn-off mode of pole voltage is used to reduce the overvoltage during turn-off.

Contents of the invention

The object of the present invention is to solve the above-mentioned problems, and provide a short-circuit protection circuit for APF high-power IGBT, which has the function of improving the reliability of the working circuit, and adopts a soft-off method of slowly reducing the IGBT gate voltage to reduce the short-circuit. The advantage of overvoltage during shutdown.

In order to achieve the above object, the present invention adopts the following technical solutions:

A short-circuit protection circuit for APF high-power IGBT, including

The working control circuit of IGBT uses the PWM signal to control whether the IGBT works or not;

The IGBT short-circuit protection circuit is used to monitor the IGBT short-circuit current, and under the control of the PWM signal, the gate voltage is slowly reduced when the circuit is short-circuited to prevent the IGBT short-circuit from causing overvoltage and damaging the IGBT.

The short-circuit protection circuit of the IGBT includes:

The work control circuit of the short circuit protection circuit is used to control whether the short circuit protection circuit works or not;

The detection circuit of the short-circuit protection circuit is used to detect the short-circuit current of the IGBT;

a slowly reducing gate voltage circuit for slowly reducing the gate voltage;

The protection latch reset circuit is used to protect the slow step-down state until the IGBT is completely turned off.

The working control circuit of the IGBT includes an IGBT normal turn-on part and an IGBT normal turn-off control part;

The normal opening part of the IGBT includes 2N5401 transistor Q10, MJD44H11 transistor Q5, and gate drive resistor RG; the base of the MJD44H11 transistor Q5 is connected to the PWM drive device, the collector of the MJD44H11 transistor Q5 is connected to +15V TOP, and the MJD44H11 The emitter of the transistor Q5 is connected to the base of the IGBT through the gate drive resistor RG, the collector of the IGBT is connected to the power supply VCE, and the emitter of the IGBT is grounded to POWERGND.

The IGBT normal shutdown control part includes 2N5401 transistor Q10, MJD45H11 transistor Q8, and gate drive resistor RG; the base of the MJD45H11 transistor Q8 is connected to the PWM driver, and the collector of the MJD45H11 transistor Q8 is connected to -5V TOP. The emitter of the MJD45H11 transistor Q8 is connected to the base of the IGBT through the gate drive resistor RG, the collector of the IGBT is connected to the power supply VCE, and the emitter of the IGBT is grounded to POWERGND.

The working control circuit of the short-circuit protection circuit includes a 2N5401 triode Q10, the base of the 2N5401 triode Q10 is connected to the PWM driving device, the collector of the 2N5401 triode Q10 is grounded, and the emitter of the 2N5401 triode Q10 is connected to the resistor R12. +15V TOP.

The detection circuit of the short circuit protection circuit includes a BY203/20S diode D2, a Zener diode DV2, a capacitor C5 and a resistor R12, the cathode of the BY203/20S diode D2 is connected to the collector of the IGBT, and the BY203/20S diode D2 The positive pole is connected to +15V TOP through the resistor R12, the positive pole of the BY203/20S diode D2 is also grounded through the capacitor C5, the positive pole of the BY203/20S diode D2 is also connected to the negative pole of the Zener diode DV2, and the Zener diode DV2 The positive pole is connected to the slowly reducing gate voltage circuit.

The slowly lowering gate voltage circuit includes 2N3904 transistor Q9, TLP521-1 photocoupler U1, resistor R17, resistor R14, capacitor C4, IN4148 diode D3, PBSS3540M transistor Q6, resistor R26, the base of the 2N3904 transistor Q9 Connected to the anode of the Zener diode DV2, the emitter of the 2N3904 transistor Q9 is grounded, the collector of the 2N3904 transistor Q9 is connected to the second pin of the TLP521-1 photocoupler U1, and the TLP521-1 photocoupler The third pin of the TLP521-1 optocoupler U1 is grounded, the first pin of the TLP521-1 optocoupler U1 is connected to the resistor R17, the fourth pin of the TLP521-1 optocoupler U1 is connected to the protection latch reset circuit, and the The resistor R17 is connected to +15V TOP through the resistor R14, the resistor R14 is also connected in parallel with the capacitor C4, the resistor R14 is also connected in parallel with the IN4148 diode D3, the negative pole of the IN4148 diode D3 is connected to +15V TOP, and the positive pole of the IN4148 diode D3 Connect to the base of the PBSS3540M transistor Q6, the collector of the PBSS3540M transistor Q6 is grounded, the emitter of the PBSS3540M transistor Q6 is connected to the emitter of the MJD44H11 transistor Q5 and the emitter of the MJD45H11 transistor Q8 through a resistor R26.

The protection latch reset circuit includes an HCF4013BM1 latch U27, a capacitor C218, and a resistor R21. The 4th pin of the HCF4013BM1 latch U27 is grounded through the capacitor C218, and the 4th pin of the HCF4013BM1 latch U27 is passed through Resistor R21 is connected to +5V voltage, the 4th pin of the HCF4013BM1 latch U27 is also connected to the 4th pin of the TLP521-1 optocoupler U1, the 3rd pin of the HCF4013BM1 latch U27 and The fifth pin of the HCF4013BM1 latch U27 is grounded, the first pin of the HCF4013BM1 latch U27 is connected to PWM LOCK, and the sixth pin of the HCF4013BM1 latch U27 is connected to +5V voltage through the reset switch, so The sixth pin of the HCF4013BM1 latch U27 is also grounded through the parallel capacitor C109 and resistor R116.

The resistance value of the resistor R12 is 2.2 kΩ, the capacitance value of the capacitor C5 is 4.7nF, the transistor Q10 is 2N5401, the transistor Q5 is MJD44H11, and the transistor Q8 is MJD45H11. The model of photocoupler U1 is TIP521, the model of latch U27 is HCF4013BM1 fault signal latch, Zener diode DV2 is the reference value of IGBT short-circuit protection voltage, capacitor C5 is the effective delay capacitor for protection, of which capacitor C4 and resistor R17 It is the turn-on delay time of the photocoupler U1 secondary side.

The resistance value of resistor R14 and resistor R17 is 1 kohm, the capacitance value of capacitor C4 is 20nF, the type of diode D3 is 1N4148, the resistance value of resistor R21 is 10 kohm, the capacitance value of capacitor C218 is 0.1uF, the type of diode D2 is BY203/20S, Capacitor C109 has a capacitance of 0.1uF, resistor R116 has a resistance of 10 kΩ, transistor Q6 has a model of PBSS3540M, resistor R26 has a resistance of 220 Ω, and latch U27A has a model of HCF4013BM1.

Beneficial effects of the present invention:

1. By introducing the gate soft turn-off technology, the way of slowly reducing the gate voltage and the reasonable driving mode can improve the reliability of the equipment.

2 Improve the reliability of the working circuit, and adopt a soft shutdown method that slowly reduces the gate voltage of the IGBT to reduce the overvoltage during shutdown when a short circuit occurs.

3 The cost of using the drive protection module is relatively high, and the cost of using this solution is low.

4 The time of soft shutdown and protection can be controlled separately, which improves the accuracy of protection.

5 Increase the protection of the effective circuit part to avoid false protection.

Description of drawings

Figure 1 is a schematic diagram of an IGBT short-circuit protection.

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

As shown in Figure 1, a short-circuit protection circuit for APF high-power IGBT, including

The working control circuit of IGBT is used to control whether the IGBT works or not;

The IGBT short-circuit protection circuit is used to monitor the IGBT short-circuit current, and use the slow-down gate voltage circuit to prevent the IGBT short-circuit from causing overvoltage and damage the IGBT.

The short-circuit protection circuit of the IGBT includes

The work control circuit of the short circuit protection circuit is used to control whether the short circuit protection circuit works or not;

The detection circuit of the short circuit protection circuit is used to detect the voltage of the IGBT;

a slowly reducing gate voltage circuit for slowly reducing the gate voltage;

The protection latch reset circuit is used to protect the PWM and turn off the IGBT completely.

The working control circuit of the IGBT includes an IGBT normal turn-on part and an IGBT normal turn-off control part;

The normal opening part of the IGBT includes 2N5401 transistor Q10, MJD44H11 transistor Q5, and gate drive resistor RG; the base of the MJD44H11 transistor Q5 is connected to the PWM drive device, the collector of the MJD44H11 transistor Q5 is connected to +15V TOP, and the MJD44H11 The emitter of the transistor Q5 is connected to the base of the IGBT through the gate drive resistor RG, the collector of the IGBT is connected to the power supply VCE, and the emitter of the IGBT is grounded to POWERGND.

The IGBT normal shutdown control part includes 2N5401 transistor Q10, MJD45H11 transistor Q8, and gate drive resistor RG; the base of the MJD45H11 transistor Q8 is connected to the PWM driver, and the collector of the MJD45H11 transistor Q8 is connected to -5V TOP. The emitter of the MJD45H11 transistor Q8 is connected to the base of the IGBT through the gate drive resistor RG, the collector of the IGBT is connected to the power supply VCE, and the emitter of the IGBT is grounded to POWERGND.

The working control circuit of the short-circuit protection circuit includes a 2N5401 triode Q10, the base of the 2N5401 triode Q10 is connected to the PWM driving device, the collector of the 2N5401 triode Q10 is grounded, and the emitter of the 2N5401 triode Q10 is connected to the resistor R12. +15V TOP.

The detection circuit of the short circuit protection circuit includes a BY203/20S diode D2, a Zener diode DV2, a capacitor C5 and a resistor R12, the cathode of the BY203/20S diode D2 is connected to the collector of the IGBT, and the BY203/20S diode D2 The positive pole is connected to +15V TOP through the resistor R12, the positive pole of the BY203/20S diode D2 is also grounded through the capacitor C5, the positive pole of the BY203/20S diode D2 is also connected to the negative pole of the Zener diode DV2, and the Zener diode DV2 The positive pole is connected to the slowly reducing gate voltage circuit.

The slowly lowering gate voltage circuit includes 2N3904 transistor Q9, TLP521-1 photocoupler U1, resistor R17, resistor R14, capacitor C4, IN4148 diode D3, PBSS3540M transistor Q6, resistor R26, the base of the 2N3904 transistor Q9 Connected to the anode of the Zener diode DV2, the emitter of the 2N3904 transistor Q9 is grounded, the collector of the 2N3904 transistor Q9 is connected to the second pin of the TLP521-1 photocoupler U1, and the TLP521-1 photocoupler The third pin of the TLP521-1 optocoupler U1 is grounded, the first pin of the TLP521-1 optocoupler U1 is connected to the resistor R17, the fourth pin of the TLP521-1 optocoupler U1 is connected to the protection latch reset circuit, and the The resistor R17 is connected to +15V TOP through the resistor R14, the resistor R14 is also connected in parallel with the capacitor C4, the resistor R14 is also connected in parallel with the IN4148 diode D3, the negative pole of the IN4148 diode D3 is connected to +15V TOP, and the positive pole of the IN4148 diode D3 Connect to the base of the PBSS3540M transistor Q6, the collector of the PBSS3540M transistor Q6 is grounded, the emitter of the PBSS3540M transistor Q6 is connected to the emitter of the MJD44H11 transistor Q5 and the emitter of the MJD45H11 transistor Q8 through a resistor R26.

The protection latch reset circuit includes an HCF4013BM1 latch U27, a capacitor C218, and a resistor R21. The 4th pin of the HCF4013BM1 latch U27 is grounded through the capacitor C218, and the 4th pin of the HCF4013BM1 latch U27 is passed through Resistor R21 is connected to +5V voltage, the 4th pin of the HCF4013BM1 latch U27 is also connected to the 4th pin of the TLP521-1 optocoupler U1, the 3rd pin of the HCF4013BM1 latch U27 and The fifth pin of the HCF4013BM1 latch U27 is grounded, the first pin of the HCF4013BM1 latch U27 is connected to PWM LOCK, and the sixth pin of the HCF4013BM1 latch U27 is connected to +5V voltage through the reset switch, so The sixth pin of the HCF4013BM1 latch U27 is also grounded through the parallel capacitor C109 and resistor R116.

The normal opening part of the IGBT is composed of a transistor Q10, a transistor Q5, and a gate drive resistor RG. When the PWM drive is at a high level, the transistor Q10 is turned off and the transistor Q5 is turned on. The normal turn-off control part of the IGBT is composed of a transistor Q10, a transistor Q8, and a gate drive resistor RG. The transistor Q10 effectively turns on the shutdown switch for controlling the protection action. The IGBT protection action and holding reset part is composed of diode D2, resistor R12, capacitor C5, Zener diode DV2, transistor Q9, photocoupler U1, resistor R14, resistor R17, capacitor C4, diode D3, transistor Q6, resistor R26, reset Composed of switch S2, capacitor C109, resistor R116, latch U27A, capacitor C218, and resistor R21, TIP521 optocoupler U1 signal isolation transmission, HCF4013BM1 latch U27 fault signal latch, Zener diode DV2 is the IGBT short-circuit protection voltage reference Capacitor C5 is the protective effective delay capacitor, capacitor C4, resistor R17, diode D3, and transistor Q6 are the parts that slowly reduce the gate voltage, and capacitor C4 and resistor R17 are the conduction delay time of the photocoupler U1 photocoupler secondary side . Reset switch S2, capacitor C109, and resistor R116 reset the fault signal.

The invention relates to a method for APF high-power IGBT short-circuit protection. In order to prevent the IGBT from being damaged due to overvoltage caused by the IGBT short-circuit protection, the overvoltage during turn-off is reduced by reducing the IGBT gate voltage in a soft-off mode.

As shown in Figure 1:

IGBT normal opening part of the working process, when the PWM signal is high level, the transistor Q10 is cut off, the drive transistor Q5 is turned on, the gate drive signal is +15V TOP, the collector of the transistor Q10 is +15V TOP, the protection circuit is effective, and the capacitor C5 Charging starts through the resistor R12, the voltage of the Zener diode DV2 rises, and the voltage value of the Zener diode DV2 is set as the IGBT (VCE) short-circuit protection value. When the normal voltage drop of the IGBT is set to 2V, the short-circuit value is stable. When the voltage diode DV2 is set to 5V, the capacitance value of capacitor C5 is 4.7Nf, R12 is 2.2 kohms, and the time to reach 5V by charging through resistor R2 is t. Among them, resistor R=R12, capacitor C=C5, E=+15V, voltage V=5V, time t=4us, and the IGBT turn-on time is 1.5Us, so when the IGBT is turned on, the reverse voltage of the Zener diode DV2 is 3V , the value voltage of the Zener diode DV2 is not reached, the Zener diode DV2 is not turned on, and the IGBTQ7 is normally turned on.

IGBT normal shutdown control part of the process, when PWM is low level, transistor Q10 is turned on, driving transistor Q8 is turned on, the gate drive signal is -5V, the collector of transistor Q10 is low level, the IGBT protection circuit is cut off, and the voltage is stabilized The reverse voltage of the diode DV2 becomes low, and the capacitor C5 is discharged through the transistor Q10. Since the gate drive signal is -5V, the IGBT Q7 is turned off.

The IGBT protection action and the reset process are maintained. When the IGBT Q7 is short-circuited, the saturation voltage drop Vce of the transistor Q7 rises, and the voltage of the Zener diode DV2 rises. After rising to the value voltage of the Zener diode DV2, the Zener diode DV2 is turned on, and the transistor Q9 Turn on, the capacitor C4 is charged through the resistor R17, the diode D3 and the transistor Q6 are turned on, the gate voltage of the IGBTQ7 gradually decreases, and the gate voltage slowly decreases. After the current of the capacitor C4 increases to the threshold voltage of the optocoupler U1, the photoelectric The secondary side of the coupler U1 is turned on, the 4th pin of the photocoupler U1 is low, the 4th pin of the latch U27A is low, the 1st pin of the latch U27A is high and keeps the PWM protection locked, and the IGBT is completely Turn off, the photocoupler U1 TLP521 optocoupler delay time is 2us, the delay time required for the capacitor C4 to reach 1mA through the resistor R17 is 1.32us, where the capacitor C4 has a capacitance value of 20nF, and the resistor R17 is 1 kohm, so in When the IGBT complete shutdown signal -5V arrives, the gate voltage of the IGBT Q7 slowly drops to 0V for 3us, after which the PWM protection is locked and the IGBT is completely shut off. When the fault signal is not eliminated, the latch U27A remains locked. When the fault signal is eliminated, that is, when the fourth pin of the latch U27A is high, the sixth pin of the latch U27A is +5V_A by pressing the reset switch S2 High level signal, the first pin of the latch U27A becomes low level, and the reset of the latch U27A is completed.

Although the specific implementation of the present invention has been described above in conjunction with the accompanying drawings, it does not limit the protection scope of the present invention. Those skilled in the art should understand that on the basis of the technical solution of the present invention, those skilled in the art do not need to pay creative work Various modifications or variations that can be made are still within the protection scope of the present invention.

Claims (7)

1. for a short-circuit protection circuit for APF high-power IGBT, it is characterized in that, comprise

Whether the working control circuit of IGBT, utilize the work of pwm signal control IGBT;

The short-circuit protection circuit of IGBT, for monitoring IGBT short circuit current, and under pwm signal controls in short circuit time utilize and slowly reduce grid voltage circuit and prevent IGBT short circuit from causing overvoltage and damage IGBT;

The short-circuit protection circuit of described IGBT comprises:

Whether the working control circuit of short-circuit protection circuit, for controlling the work of short-circuit protection circuit;

The testing circuit of short-circuit protection circuit, for detecting the short circuit current of IGBT;

Slow reduction grid voltage circuit, for slowly reducing grid voltage;

Reset circuit is latched in protection, for carrying out protection locking to the state of slow step-down, until turn off IGBT completely;

The testing circuit of described short-circuit protection circuit, comprise BY203/20S diode D2, voltage stabilizing didoe DV2, electric capacity C5 and resistance R12, the negative pole of described BY203/20S diode D2 connects the collector electrode of IGBT, the positive pole of described BY203/20S diode D2 meets+15V TOP by resistance R12, the positive pole of described BY203/20S diode D2 is also by electric capacity C5 ground connection, the positive pole of described BY203/20S diode D2 is also connected with the negative pole of voltage stabilizing didoe DV2, and the positive pole of described voltage stabilizing didoe DV2 connects and slowly reduces grid voltage circuit;

Described slow reduction grid voltage circuit, comprise 2N3904 triode Q9, TLP521-1 photoelectrical coupler U1, resistance R17, resistance R14, electric capacity C4, IN4148 diode D3, PBSS3540M triode Q6, resistance R26, the base stage of described 2N3904 triode Q9 is connected to the positive pole of described voltage stabilizing didoe DV2, the grounded emitter of described 2N3904 triode Q9, the collector electrode of described 2N3904 triode Q9 connects the 2nd pin of TLP521-1 photoelectrical coupler U1, the 3rd pin ground connection of described TLP521-1 photoelectrical coupler U1, the 1st pin connecting resistance R17 of described TLP521-1 photoelectrical coupler U1, 4th pin of described TLP521-1 photoelectrical coupler U1 connects protection and latches reset circuit, described resistance R17 meets+15VTOP by resistance R14, described resistance R14 is also in parallel with electric capacity C4, described resistance R14 is also in parallel with IN4148 diode D3, the negative pole of described IN4148 diode D3 is connected to+15V TOP, the positive pole of described IN4148 diode D3 is connected to the base stage of PBSS3540M triode Q6, the grounded collector of described PBSS3540M triode Q6, the emitter of described PBSS3540M triode Q6 connects the emitter of MJD44H11 triode Q5 and the emitter of MJD45H11 triode Q8 by resistance R26.

2. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, is characterized in that, the working control circuit of described IGBT comprises IGBT and normally opens part and IGBT normal turn-off control section;

Described IGBT normally opens part and comprises 2N5401 triode Q10, MJD44H11 triode Q5, raster data model resistance RG; The base stage of described MJD44H11 triode Q5 connects PWM drive unit, the collector electrode of described MJD44H11 triode Q5 meets+15V TOP, the emitter of described MJD44H11 triode Q5 connects the base stage of IGBT by raster data model resistance RG, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.

3. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 2, it is characterized in that, described IGBT normal turn-off control section comprises 2N5401 triode Q10, MJD45H11 triode Q8, raster data model resistance RG; The base stage of described MJD45H11 triode Q8 connects PWM drive unit, and the collector electrode of described MJD45H11 triode Q8 meets-5VTOP, and the emitter of described MJD45H11 triode Q8 connects the base stage of IGBT by raster data model resistance RG.

4. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1; it is characterized in that; the working control circuit of described short-circuit protection circuit; comprise 2N5401 triode Q10; the base stage of described 2N5401 triode Q10 connects PWM drive unit; the grounded collector of described 2N5401 triode Q10, the emitter of described 2N5401 triode Q10 meets+15V TOP by resistance R12.

5. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, it is characterized in that, described protection is latched reset circuit and is comprised HCF4013BM1 latch U27, electric capacity C218, resistance R21, 4th pin of described HCF4013BM1 latch U27 is by electric capacity C218 ground connection, 4th pin of described HCF4013BM1 latch U27 connects+5V voltage by resistance R21, 4th pin of described HCF4013BM1 latch U27 also receives the 4th pin of described TLP521-1 photoelectrical coupler U1, 3rd pin of described HCF4013BM1 latch U27 and the 5th pin all ground connection of HCF4013BM1 latch U27, 1st pin of described HCF4013BM1 latch U27 connects PWM LOCK, 6th pin of described HCF4013BM1 latch U27 connects+5V voltage by reset switch, 6th pin of described HCF4013BM1 latch U27 is also by electric capacity C109 in parallel and resistance R116 ground connection.

6. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, it is characterized in that, resistance R12 resistance is 2.2 kilo-ohms, and electric capacity C5 capacitance is 4.7nF.

7. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 5; it is characterized in that; resistance R14, resistance R17 resistance are 1 kilo-ohm; electric capacity C4 capacitance is 20nF; resistance R21 resistance is 10 kilo-ohms, and electric capacity C218 capacitance is 0.1uF, and electric capacity C109 capacitance is 0.1uF; resistance R116 resistance is 10 kilo-ohms, and resistance R26 resistance is 220 Europe.