CN203491683U - Short-circuit protecting circuit for large-power IGBT of APF - Google Patents
Short-circuit protecting circuit for large-power IGBT of APF Download PDFInfo
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- CN203491683U CN203491683U CN201320444870.9U CN201320444870U CN203491683U CN 203491683 U CN203491683 U CN 203491683U CN 201320444870 U CN201320444870 U CN 201320444870U CN 203491683 U CN203491683 U CN 203491683U
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Abstract
The utility model discloses a short-circuit protecting circuit for a large-power IGBT of an APF, which comprises the following components: an IGBT operation control circuit which is connected with the IGBT; and an IGBT short-circuit protection circuit which is connected with the IGBT. The IGBT short-circuit protection circuit comprises the following components: a short-circuit protection circuit operation control circuit, a short-circuit protection circuit detecting circuit, a slow grid voltage reducing circuit and a protective latch resetting circuit. The short-circuit protection circuit operation control circuit is connected with the short-circuit protection circuit detecting circuit. The short-circuit protection circuit detecting circuit is connected with the IGBT. The slow grid voltage reducing circuit is connected with the short-circuit protection circuit operation control circuit, the protective latch resetting circuit and the IGBT. The short-circuit protecting circuit for the large-power IGBT of the APF has the following advantages: improving reliability of operation circuit, and reducing overvoltage in switching-off in a soft switching-off manner of slowly reducing grid voltage of the IGBT when short circuit occurs.
Description
Technical field
The utility model belongs to power electronics and controls protection field, relates in particular to a kind of short-circuit protection circuit for APF high-power IGBT.
Background technology
Since first MOSFET and IGBT come out in the world, voltage-controlled type power electronic device particularly IGBT is just experiencing the process of a develop rapidly.The voltage of IGBT single module device is done higher and higher, and electric current is done larger and larger.Meanwhile, supporting driving element has also obtained greatly developing with it.Along with device application field is more and more wider, power-supply device transform power is increasing, especially aspect harmonic wave control, Active Power Filter-APF adopts IGBT switch motion compensation harmonic, when IGBT is short-circuited, adopt general speed to block grid voltage, too high current changing rate di/dt can cause overvoltage, high pressure may make IGBT that locking phenomena occurs and cause the problem of damage, conventionally for fear of short-circuit protection, cause overvoltage and damage IGBT, generally take to increase driving resistance, extend turn-off time and bus and add pop wave absorbing circuit, but increase, drive resistance also can increase switching loss, affect waveform quality, functional reliability is reduced, in order to improve operating circuit reliability, when being short-circuited, take the soft shutoff mode that slowly reduces IGBT grid voltage to reduce the overvoltage while turn-offing.
Utility model content
The purpose of this utility model is exactly in order to address the above problem; a kind of short-circuit protection circuit for APF high-power IGBT is provided; it has the operating circuit of raising reliability, takes the soft shutoff mode that slowly reduces IGBT grid voltage to reduce the superpotential advantage while turn-offing when being short-circuited.
To achieve these goals, the utility model adopts following technical scheme:
A short-circuit protection circuit for APF high-power IGBT, comprises
The working control circuit of IGBT, is connected with IGBT, utilizes work that pwm signal controls IGBT whether;
The short-circuit protection circuit of IGBT, is also connected with IGBT, for monitoring IGBT short circuit current, and under pwm signal is controlled, utilizes during in short circuit and slowly reduces grid voltage circuit and prevent that IGBT short circuit from causing overvoltage and damaging IGBT;
The short-circuit protection circuit of described IGBT comprises:
The working control circuit of short-circuit protection circuit, for the work of controlling short-circuit protection circuit whether;
The testing circuit of short-circuit protection circuit, detects for the short circuit current to IGBT;
Slowly reduce grid voltage circuit, for slowly reducing grid voltage;
Reset circuit is latched in protection, for the state of slow step-down is protected to locking, until turn-off IGBT completely;
The working control circuit of described short-circuit protection circuit is connected with the testing circuit of short-circuit protection circuit; the testing circuit of described short-circuit protection circuit is connected with IGBT, and described slow reduction grid voltage circuit latchs reset circuit and is connected with IGBT with working control circuit, the protection of short-circuit protection circuit.
The working control circuit of described IGBT comprises that IGBT normally opens part and IGBT normal turn-off control section;
Described IGBT normally opens part and comprises that 2N5401 triode Q10, MJD44H11 triode Q5, grid drive resistance R G; The base stage of described MJD44H11 triode Q5 connects PWM drive unit, connect+the 15V of collector electrode of described MJD44H11 triode Q5, the emitter of described MJD44H11 triode Q5 drives resistance R G to connect the base stage of IGBT by grid, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
Described IGBT normal turn-off control section comprises that 2N5401 triode Q10, MJD45H11 triode Q8, grid drive resistance R G; The base stage of described MJD45H11 triode Q8 connects PWM drive unit, connect-the 5V of collector electrode of described MJD45H11 triode Q8, the emitter of described MJD45H11 triode Q8 drives resistance R G to connect the base stage of IGBT by grid, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
The working control circuit of described short-circuit protection circuit; comprise 2N5401 triode Q10; the base stage of described 2N5401 triode Q10 connects PWM drive unit, the grounded collector of described 2N5401 triode Q10, and the emitter of described 2N5401 triode Q10 is by connect+15V of resistance R 12.
The testing circuit of described short-circuit protection circuit; comprise BY203/20S diode D2, voltage stabilizing didoe DV2, capacitor C 5 and resistance R 12; the negative pole of described BY203/20S diode D2 connects the collector electrode of IGBT; the positive pole of described BY203/20S diode D2 is by connect+15V of resistance R 12; the positive pole of described BY203/20S diode D2 is also by capacitor C 5 ground connection; the positive pole of described BY203/20S diode D2 is also connected with the negative pole of voltage stabilizing didoe DV2, and the positive pole of described voltage stabilizing didoe DV2 connects slow reduction grid voltage circuit.
Described slow reduction grid voltage circuit, comprise 2N3904 triode Q9, TP521-1 photoelectrical coupler U1, resistance R 17, resistance R 14, capacitor C 4, IN4148 diode D3, PBSS3540M triode Q6, resistance R 26, the base stage of described 2N3904 triode Q9 is connected to the positive pole of described voltage stabilizing didoe DV2, the grounded emitter of described 2N3904 triode Q9, the base collector electrode of described 2N3904 triode Q9 connects the 2nd pin of TP521-1 photoelectrical coupler U1, the 3rd pin ground connection of described TP521-1 photoelectrical coupler U1, the 1st pin connecting resistance R17 of described TP521-1 photoelectrical coupler U1, the 4th pin of described TP521-1 photoelectrical coupler U1 connects protection and latchs reset circuit, described resistance R 17 is by connect+15V of resistance R 14, described resistance R 14 is also in parallel with capacitor C 4, described resistance R 14 is also in parallel with IN4148 diode D3, be connected to+the 15V of negative pole of described IN4148 diode D3, the positive pole of described IN4148 diode D3 is connected to the base stage of PBSS3540M triode Q6, the grounded collector of described PBSS3540M triode Q6, the emitter of described PBSS3540M triode Q6 connects the emitter of MJD44H11 triode Q5 and the emitter of MJD45H11 triode Q8 by resistance R 26.
Described protection is latched reset circuit and is comprised HCF4013BM1 latch U27, capacitor C 218, resistance R 21, the 4th pin of described HCF4013BM1 latch U27 is by capacitor C 218 ground connection, the 4th pin of described HCF4013BM1 latch U27 is by connect+5V of resistance R 21 voltage, the 4th pin of described HCF4013BM1 latch U27 is also received the 4th pin of described TP521-1 photoelectrical coupler U1, the 3rd pin of described HCF4013BM1 latch U27 and the 5th pin of HCF4013BM1 latch U27 be ground connection all, the 1st pin of described HCF4013BM1 latch U27 connects PWM LOCK, the 6th pin of described HCF4013BM1 latch U27 is by connect+5V of reset switch voltage, the 6th pin of described HCF4013BM1 latch U27 is also by capacitor C in parallel 109 and resistance R 116 ground connection.
Resistance R 12 resistances are 2.2 kilo-ohms, and capacitor C 5 capacitances are 4.7nF, and triode Q10 is 2N5401, and triode Q5 is MJD44H11, and triode Q8 is MJD45H11.The model of photoelectrical coupler U1 is TIP521; the model of latch U27 is that HCF4013BM1 fault-signal latchs; voltage stabilizing didoe DV2 is IGBT short-circuit protection voltage reference value; capacitor C 5 electric capacity are protection effective delay electric capacity, and wherein capacitor C 4, resistance R 17 are photoelectrical coupler U1 secondary conducting delay time.
Resistance R 14, resistance R 17 resistances are 1 kilo-ohm, capacitor C 4 capacitances are 20nF, diode D3 model is 1N4148, and resistance R 21 resistances are 10 kilo-ohms, and capacitor C 218 capacitances are 0.1 μ F, diode D2 model is BY203/20S, capacitor C 109 capacitances are 0.1 μ F, and resistance R 116 resistances are 10 kilo-ohms, and triode Q6 model is PBSS3540M, resistance R 26 resistances are 220 Europe, and latch U27A model is HCF4013BM1.
The beneficial effects of the utility model:
1 by introducing the soft turn-off technique of grid, both slowly reduces the mode of grid voltage, and rational driving mode, can improve the reliability of equipment work.
2 improve operating circuit reliability, take the soft shutoff mode that slowly reduces IGBT grid voltage to reduce the overvoltage while turn-offing when being short-circuited.
3 use driving protection module cost compare high, use this scheme cost low.
The time of 4 soft shutoffs and protection is controlled respectively, improves the accuracy of protection.
5 increase protection efficient circuit has partly avoided mistake protection.
Accompanying drawing explanation
Fig. 1 is a kind of IGBT short-circuit protection schematic diagram.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail.
As shown in Figure 1, a kind of short-circuit protection circuit for APF high-power IGBT, comprises
The working control circuit of IGBT, for the work of controlling IGBT whether;
The short-circuit protection circuit of IGBT, for monitoring IGBT short circuit current, and utilizes slowly reduction grid voltage circuit to prevent that IGBT short circuit from causing overvoltage and damaging IGBT.
The short-circuit protection circuit of described IGBT comprises
For the work of controlling short-circuit protection circuit whether the working control circuit of short-circuit protection circuit;
The testing circuit of short-circuit protection circuit, detects for the voltage to IGBT;
Slowly reduce grid voltage circuit, for slowly reducing grid voltage;
Reset circuit is latched in protection, for PWM being protected to locking, turn-offs IGBT completely.
The working control circuit of described IGBT comprises that IGBT normally opens part and IGBT normal turn-off control section;
Described IGBT normally opens part and comprises that 2N5401 triode Q10, MJD44H11 triode Q5, grid drive resistance R G; The base stage of described MJD44H11 triode Q5 connects PWM drive unit, connect+the 15V of collector electrode of described MJD44H11 triode Q5, the emitter of described MJD44H11 triode Q5 drives resistance R G to connect the base stage of IGBT by grid, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
Described IGBT normal turn-off control section comprises that 2N5401 triode Q10, MJD45H11 triode Q8, grid drive resistance R G; The base stage of described MJD45H11 triode Q8 connects PWM drive unit, connect-the 5V of collector electrode of described MJD45H11 triode Q8, the emitter of described MJD45H11 triode Q8 drives resistance R G to connect the base stage of IGBT by grid, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
The working control circuit of described short-circuit protection circuit; comprise 2N5401 triode Q10; the base stage of described 2N5401 triode Q10 connects PWM drive unit, the grounded collector of described 2N5401 triode Q10, and the emitter of described 2N5401 triode Q10 is by connect+15V of resistance R 12.
The testing circuit of described short-circuit protection circuit; comprise BY203/20S diode D2, voltage stabilizing didoe DV2, capacitor C 5 and resistance R 12; the negative pole of described BY203/20S diode D2 connects the collector electrode of IGBT; the positive pole of described BY203/20S diode D2 is by connect+15V of resistance R 12; the positive pole of described BY203/20S diode D2 is also by capacitor C 5 ground connection; the positive pole of described BY203/20S diode D2 is also connected with the negative pole of voltage stabilizing didoe DV2, and the positive pole of described voltage stabilizing didoe DV2 connects slow reduction grid voltage circuit.
Described slow reduction grid voltage circuit, comprise 2N3904 triode Q9, TP521-1 photoelectrical coupler U1, resistance R 17, resistance R 14, capacitor C 4, IN4148 diode D3, PBSS3540M triode Q6, resistance R 26, the base stage of described 2N3904 triode Q9 is connected to the positive pole of described voltage stabilizing didoe DV2, the grounded emitter of described 2N3904 triode Q9, the base collector electrode of described 2N3904 triode Q9 connects the 2nd pin of TP521-1 photoelectrical coupler U1, the 3rd pin ground connection of described TP521-1 photoelectrical coupler U1, the 1st pin connecting resistance R17 of described TP521-1 photoelectrical coupler U1, the 4th pin of described TP521-1 photoelectrical coupler U1 connects protection and latchs reset circuit, described resistance R 17 is by connect+15V of resistance R 14, described resistance R 14 is also in parallel with capacitor C 4, described resistance R 14 is also in parallel with IN4148 diode D3, be connected to+the 15V of negative pole of described IN4148 diode D3, the positive pole of described IN4148 diode D3 is connected to the base stage of PBSS3540M triode Q6, the grounded collector of described PBSS3540M triode Q6, the emitter of described PBSS3540M triode Q6 connects the emitter of MJD44H11 triode Q5 and the emitter of MJD45H11 triode Q8 by resistance R 26.
Described protection is latched reset circuit and is comprised HCF4013BM1 latch U27, capacitor C 218, resistance R 21, the 4th pin of described HCF4013BM1 latch U27 is by capacitor C 218 ground connection, the 4th pin of described HCF4013BM1 latch U27 is by connect+5V of resistance R 21 voltage, the 4th pin of described HCF4013BM1 latch U27 is also received the 4th pin of described TP521-1 photoelectrical coupler U1, the 3rd pin of described HCF4013BM1 latch U27 and the 5th pin of HCF4013BM1 latch U27 be ground connection all, the 1st pin of described HCF4013BM1 latch U27 connects PWM LOCK, the 6th pin of described HCF4013BM1 latch U27 is by connect+5V of reset switch voltage, the 6th pin of described HCF4013BM1 latch U27 is also by capacitor C in parallel 109 and resistance R 116 ground connection.
IGBT normally opens part and drives resistance R G to form by triode Q10, triode Q5, grid, when PWM drives as high level, and triode Q10 cut-off, triode Q5 conducting.IGBT normal turn-off control section drives resistance R G to form by triode Q10, triode Q8, grid, and triode Q10 effectively opens stopcock for controlling protection action.IGBT protection action and hold reset are partly by diode D2, resistance R 12, capacitor C 5, voltage stabilizing didoe DV2, triode Q9, photoelectrical coupler U1, resistance R 14, resistance R 17, capacitor C 4, diode D3, triode Q6, resistance R 26, reset switch S2, capacitor C 109, resistance R 116, latch U27A, capacitor C 218, resistance R 21 forms, TIP521 photoelectrical coupler U1 signal isolation transmission, HCF4013BM1 latch U27 fault-signal latchs, voltage stabilizing didoe DV2 is IGBT short-circuit protection voltage reference value, capacitor C 5 is protection effective delay electric capacity, capacitor C 4, resistance R 17, diode D3, triode Q6 slowly reduces grid voltage part, wherein capacitor C 4, resistance R 17 is photoelectrical coupler U1 optical coupling secondary edges conducting delay time.Reset switch S2, capacitor C 109, resistance R 116 are fault-signal reset.
The utility model is that a kind of method of APF high-power IGBT short-circuit protection causes that for preventing IGBT short-circuit protection overvoltage damages IGBT, by reducing the soft shutoff mode of IGBT grid voltage, reduces the overvoltage while turn-offing.
As shown in Figure 1:
IGBT normally opens some work process, when pwm signal is high level, triode Q10 cut-off, drive triode Q5 conducting, gate drive signal is+15V, the current collection of triode Q10 very+15V, protective circuit is effective, capacitor C 5 starts charging by resistance R 12, voltage stabilizing didoe DV2 voltage rises, the division of a ci poem threshold voltage value of voltage stabilizing didoe DV2 is set as IGBT(VCE) short-circuit protection value, when setting the normal pressure drop of IGBT conducting, be set as 2V, when short circuit value voltage stabilizing didoe DV2 is set as 5V, capacitor C 5 capacitances are 4.7Nf, R12 is 2.2 kilohms, the time that arrives 5V by resistance R 2 chargings is t,
wherein, resistance R=R12, capacitor C=C5, E=+15V, voltage V=5V, time t=4 μ s, and IGBT service time is 1.5 μ s, therefore after IGBT opens, voltage stabilizing didoe DV2 reverse voltage is 3V, do not reach voltage stabilizing didoe DV2 division of a ci poem threshold voltage, not conducting of voltage stabilizing didoe DV2, IGBTQ7 is normally open-minded.
IGBT normal turn-off control section process; when PWM is low level; triode Q10 conducting, drives triode Q8 conducting, and gate drive signal is-5V; triode Q10 current collection is low level very; the cut-off of IGBT protective circuit, voltage stabilizing didoe DV2 reverse voltage becomes low, and capacitor C 5 is discharged by triode Q10; because gate drive signal is-5V, so IGBTQ7 turn-offs.
IGBT protection action and hold reset process, when IGBT Q7 is short-circuited, triode Q7 saturation voltage drop Vce rises, voltage stabilizing didoe DV2 voltage rises, rise to after voltage stabilizing didoe DV2 division of a ci poem threshold voltage, voltage stabilizing didoe DV2 conducting, triode Q9 conducting, capacitor C 4 is charged by resistance R 17, diode D3, triode Q6 conducting, IGBTQ7 grid voltage progressively reduces, slowly reduce grid voltage, along with capacitor C 4 electric currents increase to after the division of a ci poem threshold voltage of photoelectrical coupler U1, the conducting of photoelectrical coupler U1 secondary, photoelectrical coupler U1 the 4th pin is low level, latch U27A the 4th pin is low, latch U27A the 1st pin is for height and keep PWM protection locking, IGBT turn-offs completely, photoelectrical coupler U1TLP521 optocoupler delay time 2 μ s, it is 1.32 μ s that capacitor C 4 reaches the required delay time of 1mA by resistance R 17 electric currents, wherein capacitor C 4 for capacitance be 20nF, resistance R 17 is 1 kilohm, therefore when the complete cut-off signals of IGBT-5V arrives, there is the grid voltage of the time IGBT Q7 of 3 μ s to be slowly reduced to 0V, after this PWM protection locking, IGBT is turn-offed completely.When fault-signal is not eliminated, latch U27A keeps locking, after fault-signal is eliminated, be that latch U27A the 4th pin is while being high, by pressing reset switch S2 to latch U27A 6th pin+5V_A high level signal, latch U27A the 1st pin becomes low level, and latch U27A has resetted.
Although above-mentioned, by reference to the accompanying drawings embodiment of the present utility model is described; but the not restriction to the utility model protection range; one of ordinary skill in the art should be understood that; on the basis of the technical solution of the utility model, those skilled in the art do not need to pay various modifications that creative work can make or distortion still in protection range of the present utility model.
Claims (10)
1. for a short-circuit protection circuit for APF high-power IGBT, it is characterized in that, comprise
The working control circuit of IGBT, is connected with IGBT, utilizes work that pwm signal controls IGBT whether;
The short-circuit protection circuit of IGBT, is also connected with IGBT, for monitoring IGBT short circuit current, and under pwm signal is controlled, utilizes during in short circuit and slowly reduces grid voltage circuit and prevent that IGBT short circuit from causing overvoltage and damaging IGBT;
The short-circuit protection circuit of described IGBT comprises:
The working control circuit of short-circuit protection circuit, for the work of controlling short-circuit protection circuit whether;
The testing circuit of short-circuit protection circuit, detects for the short circuit current to IGBT;
Slowly reduce grid voltage circuit, for slowly reducing grid voltage;
Reset circuit is latched in protection, for the state of slow step-down is protected to locking, until turn-off IGBT completely;
The working control circuit of described short-circuit protection circuit is connected with the testing circuit of short-circuit protection circuit; the testing circuit of described short-circuit protection circuit is connected with IGBT, and described slow reduction grid voltage circuit latchs reset circuit and is connected with IGBT with working control circuit, the protection of short-circuit protection circuit.
2. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, is characterized in that, the working control circuit of described IGBT comprises that IGBT normally opens part and IGBT normal turn-off control section;
Described IGBT normally opens part and comprises that 2N5401 triode Q10, MJD44H11 triode Q5, grid drive resistance R G; The base stage of described MJD44H11 triode Q5 connects PWM drive unit, connect+the 15V of collector electrode of described MJD44H11 triode Q5, the emitter of described MJD44H11 triode Q5 drives resistance R G to connect the base stage of IGBT by grid, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
3. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 2, is characterized in that, described IGBT normal turn-off control section comprises that 2N5401 triode Q10, MJD45H11 triode Q8, grid drive resistance R G; The base stage of described MJD45H11 triode Q8 connects PWM drive unit, connect-the 5V of collector electrode of described MJD45H11 triode Q8, the emitter of described MJD45H11 triode Q8 drives resistance R G to connect the base stage of IGBT by grid, the collector electrode of described IGBT meets power supply VCE, the grounded emitter POWERGND of described IGBT.
4. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1; it is characterized in that; the working control circuit of described short-circuit protection circuit; comprise 2N5401 triode Q10; the base stage of described 2N5401 triode Q10 connects PWM drive unit; the grounded collector of described 2N5401 triode Q10, the emitter of described 2N5401 triode Q10 is by connect+15V of resistance R 12.
5. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, it is characterized in that, the testing circuit of described short-circuit protection circuit, comprise BY203/20S diode D2, voltage stabilizing didoe DV2, capacitor C 5 and resistance R 12, the negative pole of described BY203/20S diode D2 connects the collector electrode of IGBT, the positive pole of described BY203/20S diode D2 is by connect+15V of resistance R 12, the positive pole of described BY203/20S diode D2 is also by capacitor C 5 ground connection, the positive pole of described BY203/20S diode D2 is also connected with the negative pole of voltage stabilizing didoe DV2, the positive pole of described voltage stabilizing didoe DV2 connects slow reduction grid voltage circuit.
6. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, it is characterized in that, described slow reduction grid voltage circuit, comprise 2N3904 triode Q9, TP521-1 photoelectrical coupler U1, resistance R 17, resistance R 14, capacitor C 4, IN4148 diode D3, PBSS3540M triode Q6, resistance R 26, the base stage of described 2N3904 triode Q9 is connected to the positive pole of described voltage stabilizing didoe DV2, the grounded emitter of described 2N3904 triode Q9, the base collector electrode of described 2N3904 triode Q9 connects the 2nd pin of TP521-1 photoelectrical coupler U1, the 3rd pin ground connection of described TP521-1 photoelectrical coupler U1, the 1st pin connecting resistance R17 of described TP521-1 photoelectrical coupler U1, the 4th pin of described TP521-1 photoelectrical coupler U1 connects protection and latchs reset circuit, described resistance R 17 is by connect+15V of resistance R 14, described resistance R 14 is also in parallel with capacitor C 4, described resistance R 14 is also in parallel with IN4148 diode D3, be connected to+the 15V of negative pole of described IN4148 diode D3, the positive pole of described IN4148 diode D3 is connected to the base stage of PBSS3540M triode Q6, the grounded collector of described PBSS3540M triode Q6, the emitter of described PBSS3540M triode Q6 connects the emitter of MJD44H11 triode Q5 and the emitter of MJD45H11 triode Q8 by resistance R 26.
7. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 1, it is characterized in that, described protection is latched reset circuit and is comprised HCF4013BM1 latch U27, capacitor C 218, resistance R 21, the 4th pin of described HCF4013BM1 latch U27 is by capacitor C 218 ground connection, the 4th pin of described HCF4013BM1 latch U27 is by connect+5V of resistance R 21 voltage, the 4th pin of described HCF4013BM1 latch U27 is also received the 4th pin of described TP521-1 photoelectrical coupler U1, the 3rd pin of described HCF4013BM1 latch U27 and the 5th pin of HCF4013BM1 latch U27 be ground connection all, the 1st pin of described HCF4013BM1 latch U27 connects PWM LOCK, the 6th pin of described HCF4013BM1 latch U27 is by connect+5V of reset switch voltage, the 6th pin of described HCF4013BM1 latch U27 is also by capacitor C in parallel 109 and resistance R 116 ground connection.
8. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 5, is characterized in that, resistance R 12 resistances are 2.2 kilo-ohms, and capacitor C 5 capacitances are 4.7nF.
9. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 6, is characterized in that, resistance R 14, resistance R 17 resistances are 1 kilo-ohm, and capacitor C 4 capacitances are 20nF, and resistance R 26 resistances are 220 Europe.
10. a kind of short-circuit protection circuit for APF high-power IGBT as claimed in claim 7, is characterized in that, resistance R 21 resistances are 10 kilo-ohms, and capacitor C 218 capacitances are 0.1 μ F, and capacitor C 109 capacitances are 0.1 μ F, and resistance R 116 resistances are 10 kilo-ohms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320444870.9U CN203491683U (en) | 2013-07-24 | 2013-07-24 | Short-circuit protecting circuit for large-power IGBT of APF |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320444870.9U CN203491683U (en) | 2013-07-24 | 2013-07-24 | Short-circuit protecting circuit for large-power IGBT of APF |
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| Publication Number | Publication Date |
|---|---|
| CN203491683U true CN203491683U (en) | 2014-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320444870.9U Expired - Lifetime CN203491683U (en) | 2013-07-24 | 2013-07-24 | Short-circuit protecting circuit for large-power IGBT of APF |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346538A (en) * | 2013-07-24 | 2013-10-09 | 国家电网公司 | Short-circuit protection circuit for APF high-power IGBT |
| CN105958447A (en) * | 2016-06-21 | 2016-09-21 | 卫星电子（中山）有限公司 | IGBT short-circuit protection circuit and fan control circuit therefor |
-
2013
- 2013-07-24 CN CN201320444870.9U patent/CN203491683U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346538A (en) * | 2013-07-24 | 2013-10-09 | 国家电网公司 | Short-circuit protection circuit for APF high-power IGBT |
| CN103346538B (en) * | 2013-07-24 | 2015-08-12 | 国家电网公司 | A kind of short-circuit protection circuit for APF high-power IGBT |
| CN105958447A (en) * | 2016-06-21 | 2016-09-21 | 卫星电子（中山）有限公司 | IGBT short-circuit protection circuit and fan control circuit therefor |
| CN105958447B (en) * | 2016-06-21 | 2019-01-29 | 卫星电子（中山）有限公司 | A kind of IGBT short-circuit protection circuit and its fan control circuitry of application |
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Granted publication date: 20140319 |