CN103904620A - Direct current power supply input reverse irrigation prevention circuit and method - Google Patents

Direct current power supply input reverse irrigation prevention circuit and method Download PDF

Info

Publication number
CN103904620A
CN103904620A CN201210583448.1A CN201210583448A CN103904620A CN 103904620 A CN103904620 A CN 103904620A CN 201210583448 A CN201210583448 A CN 201210583448A CN 103904620 A CN103904620 A CN 103904620A
Authority
CN
China
Prior art keywords
described
mosfet
circuit
reverse
voltage
Prior art date
Application number
CN201210583448.1A
Other languages
Chinese (zh)
Other versions
CN103904620B (en
Inventor
朱厚存
李长远
梁新春
谢长江
Original Assignee
中兴通讯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中兴通讯股份有限公司 filed Critical 中兴通讯股份有限公司
Priority to CN201210583448.1A priority Critical patent/CN103904620B/en
Publication of CN103904620A publication Critical patent/CN103904620A/en
Application granted granted Critical
Publication of CN103904620B publication Critical patent/CN103904620B/en

Links

Abstract

The invention discloses a direct current power supply input reverse irrigation prevention circuit and method. The circuit comprises a reverse connection prevention circuit, a soft start circuit and a sampling control circuit. The reverse connection prevention circuit comprises a reverse connection prevention metal oxide semiconductor field effect transistor MOSFET. The slow start circuit comprises a slow start MOSFET. The sampling control circuit samples voltage between the drain and the source of the slow start MOSFET. When the voltage between the drain and the source of the slow start MOSFET is less than the reference voltage, the reverse connection prevention MOSFET is controlled to switch off. According to the invention, current reverse irrigation is avoided when input short circuit occurs or input voltage rapidly drops; when a DC/DC converter uses a full bridge circuit, the increasing of the voltage stress of the secondary synchronous rectifier MOSFET drain and source of the converter and the damage of the MOSFET are avoided; when reverse lightning surge occurs in an input port, current reverse irrigation is avoided; and power supply output power-off caused by module input capacitor power-off is avoided.

Description

Circuit and method are filled with in a kind of DC power supply input counnter attack

Technical field

The present invention relates to power technique fields, relate in particular to a kind of DC power supply input counnter attack and fill with circuit and method.

Background technology

Current powerful direct-current switch power supply, adopts metal oxide semiconductor field effect tube (MOSFET) to realize anti-reverse function substantially.If Fig. 1 is that conventional MOSFET realizes anti-reverse circuit at present, in the normal situation of input, MOSFET conducting, and the conduction impedance of MOSFET is very little, and loss is very little, and circuit can normally be worked; In the time of input reverse-connection, MOSFET can not conducting, effectively prevents circuit reversal connection.

But sort circuit is in the time of normal work, if there is suddenly input short fault, input capacitance can be carried out repid discharge by input, causes current flowing backwards.DC/DC (DC-DC), if transducer adopts full-bridge circuit, may cause transducer secondary synchronous rectification MOSFET drain-source voltage stress to increase in this case, damages MOSFET; The heavy current impact that input side repid discharge produces also likely can damage DC power supply.

Make reverse-connection preventing circuit if adopt diode to replace MOSFET, can in the time there is input short fault, prevent current flowing backwards, but diode loss in the time that large power supply is normally worked is too large, can have a strong impact on the efficiency of large power supply.During for solution high-power DC power supply input short fault, current flowing backwards problem, just need to improve the anti-circnit NOT of MOSFET, or increases extra counnter attack filling circuit.

Summary of the invention

The technical problem to be solved in the present invention is to provide a kind of DC power supply input counnter attack and fills with circuit and method, can support anti-reversely do not affect power-efficient in the situation that, prevents current flowing backwards in the time of DC power supply input short.

For solving the problems of the technologies described above, circuit is filled with in a kind of DC power supply input counnter attack of the present invention, comprise: reverse-connection preventing circuit, soft-start circuit and sampling control circuit, described reverse-connection preventing circuit comprises anti-reverse metal oxide semiconductor field effect tube MOSFET, described soft-start circuit comprises the slow MOSFET of startup, voltage between drain electrode and the source electrode of the described slow startup MOSFET of described sampling control circuit sampling, when voltage between drain electrode and the source electrode of described slow startup MOSFET is less than reference voltage, controls described anti-reverse MOSFET and turn-off.

Further, the source electrode of described anti-reverse MOSFET is connected with the source electrode of described slow startup MOSFET, and tie point is as publicly, and the described slow drain electrode that starts MOSFET is connected with described sampling control circuit.

Further, between the drain electrode of described anti-reverse MOSFET and source electrode, be also parallel with two-way Transient Voltage Suppressor TVS.

Further, described sampling control circuit comprises bleeder circuit, comparator and control valve, described bleeder circuit is connected to drain electrode and the described sampled voltage publicly of described slow startup MOSFET, first point of pressure side of described bleeder circuit is connected to the inverting input of described comparator, second point of pressure side of described bleeder circuit is connected to the in-phase input end of described comparator, the output of described comparator is connected to the input of described control valve, the control end of described control valve is connected to described anti-reverse MOSFET, described comparator is in the time that the drain voltage of the slow startup MOSFET of sampling is less than the voltage publicly of sampling, control described control valve and turn-off described anti-reverse MOSFET.

Further, at the inverting input of described comparator and be describedly also connected with the second diode in parallel and the 3rd diode between publicly, the voltage of inverting input described in clamp, relative the 3rd diode of described the second diode connects in the other direction.

Further, described control valve adopts triode, the base stage of described triode is as the input of described control valve, the collector and emitter of described triode is as the control end of described control valve, the collector electrode of described triode is connected to the grid of described anti-reverse MOSFET, and the emitter of described triode is connected to the source electrode of described anti-reverse MOSFET.

Further, described comparator is in the time that the drain voltage of the slow startup MOSFET of sampling is less than the voltage publicly of sampling, and output HIGH voltage, drives described triode conducting, drags down the driving of described anti-reverse MOSFET, closes described anti-reverse MOSFET.

Further, a kind of DC power supply is inputted counnter attack irrigation method, comprising:

Voltage between drain electrode and the source electrode of the slow startup metal oxide semiconductor field effect tube MOSFET comprising in sampling control circuit sampling soft-start circuit;

When the voltage of described sampling control circuit between drain electrode and the source electrode of described slow startup MOSFET is less than reference voltage, controls the anti-reverse MOSFET comprising in reverse-connection preventing circuit and turn-off.

Further, also comprise:

Using the tie point of the source electrode of the source electrode of described anti-reverse MOSFET and described slow startup MOSFET as publicly.

Further, when the voltage of described sampling control circuit between drain electrode and the source electrode of described slow startup MOSFET is less than reference voltage, controls the anti-reverse MOSFET comprising in reverse-connection preventing circuit and turn-off, comprising:

Described sampling control circuit, in the time that the drain voltage of the slow startup MOSFET of sampling is less than the voltage publicly of sampling, turn-offs described anti-reverse MOSFET.

In sum, the voltage that the present invention delays by sampling between drain electrode and the source electrode that starts MOS is judged input short fault, and turn-off anti-reverse MOSFET by control and realize the anti-current flowing backwards of DC power supply input short, do not affect the anti-reverse function of input simultaneously, the present invention avoids occurring current flowing backwards (DC power supply input current is reverse) in the time that input short or input voltage fall fast, thereby can be in the time that DC/DC transducer adopts full-bridge circuit, avoid causing transducer secondary synchronous rectification MOSFET drain-source voltage stress to increase, damage MOSFET; And, while avoiding, in input port, reverse lightning surge occurs, there is current flowing backwards; thereby avoid the power down of module input capacitance, the power supply causing output power down, and; circuit of the present invention is realized simple, and cost is low, considers the lightning protection to anti-reverse MOSFET and comparator simultaneously.

Accompanying drawing explanation

Fig. 1 is reverse-connection preventing circuit of the prior art;

Fig. 2 is the circuit diagram that circuit is filled with in the DC power supply input counnter attack of embodiment of the present invention.

Embodiment

The DC power supply input counnter attack of present embodiment is filled with circuit sampling and is delayed the voltage between drain electrode and the source electrode that starts MOSFET, in the time that the voltage between slow drain electrode and the source electrode that starts MOSFET is less than reference voltage, produce a control signal, drag down the driving signal of anti-reverse MOSFET, make anti-reverse MOSFET turn-off, prevent current flowing backwards, the energy on large electric capacity consumes by DC/DC transducer.

Circuit is filled with in the DC power supply input counnter attack of present embodiment, comprise: reverse-connection preventing circuit, soft-start circuit and sampling control circuit, reverse-connection preventing circuit comprises anti-reverse MOSFET, soft-start circuit comprises the slow MOSFET of startup, voltage between slow drain electrode and the source electrode that starts MOSFET of sampling control circuit sampling, when voltage between slow drain electrode and the source electrode that starts MOSFET is less than reference voltage, controls anti-reverse MOSFET and turn-off, realize and prevent current flowing backwards.The source electrode of anti-reverse MOSFET is connected with the slow source electrode that starts MOSFET, and tie point is as publicly.

Below in conjunction with accompanying drawing, the DC power supply input counnter attack of present embodiment being filled with to circuit is described in further detail.

As shown in Figure 2, the sampling control circuit of present embodiment comprises bleeder circuit, comparator D1 and control valve, bleeder circuit is connected to the drain electrode of the slow MOSFET of startup (VT3) and sampled voltage publicly, first point of pressure side of bleeder circuit is connected to the inverting input of comparator D1, second point of pressure side of bleeder circuit is connected to the in-phase input end of comparator D1, the output of comparator D1 is connected to the input of control valve, the control end of control valve is connected to anti-reverse MOSFET (VT1), comparator D1 is in the time that the drain voltage of the slow startup MOSFET (VT3) of sampling is less than the voltage publicly of sampling, control control valve and turn-off anti-reverse MOSFET.

Bleeder circuit comprises the first bleeder circuit and the second bleeder circuit, the first resistance R 6 that the first bleeder circuit comprises series connection and the second resistance R 8, the 3rd resistance R 7 that the second bleeder circuit comprises series connection and the 4th resistance R 9, one end of the first bleeder circuit is connected with one end of the second bleeder circuit, one end not being connected with the second bleeder circuit of the first bleeder circuit is connected to drain electrode (VT3) sampled voltage of the slow MOSFET of startup, one end not being connected with the first bleeder circuit of the second bleeder circuit is connected to sampled voltage publicly, the link of the first resistance R 6 and the second resistance R 8 is as first point of pressure side, the link of the 3rd resistance R 7 and the 4th resistance R 9 is as second point of pressure side.One end that the first bleeder circuit is connected with the second bleeder circuit is also connected with reference voltage (V ref).

Control valve adopts triode VT2, the base stage of triode VT2 is as the input of control valve, the collector and emitter of triode VT2 is as the control end of control valve, the collector electrode of triode VT2 is connected to the grid of anti-reverse MOSFET, and the emitter of triode VT2 is connected to the source electrode of anti-reverse MOSFET.

The positive pole of comparator D1 is connected to boost voltage (PVCC), and negative pole is connected to publicly; Between the base stage of the output of comparator D1 and triode VT2, be also in series with the 7th resistance R 4, between the positive pole of comparator D1 and the output of comparator D1, be also connected with the 8th resistance R 5.Comparator D1 is in the time that the drain voltage of the slow startup MOSFET of the sampling of inverting input is less than the voltage publicly of sampling of in-phase input end, and output HIGH voltage, drives triode VT2 conducting, drags down the driving of anti-reverse MOSFET, closes anti-reverse MOSFET.

The inverting input of comparator D1 with publicly between be also connected with the second diode VD3 in parallel and the 3rd diode VD4, the voltage of clamp inverting input, prevents from inputting overvoltage damage comparison device.The second diode VD3 is relative, and the 3rd diode VD4 connects in the other direction, that is: the negative pole of the second diode VD3 connects the inverting input of comparator, anodal connection publicly; The positive pole of the 3rd diode VD4 connects the inverting input of comparator, and negative pole connects publicly; Or on the contrary, the positive pole of the second diode VD3 connects the inverting input of comparator, negative pole connects publicly; The negative pole of the 3rd diode VD4 connects the inverting input of comparator, anodal connection publicly.

Soft-start circuit comprises the slow MOSFET of startup (VT3), slow starting power resistance R 10 and slow starting control circuit, slow starting power resistance R 10 is in parallel with slow startup MOSFET, slow starting power resistance R 10 is connected conduct publicly with the link of the slow source electrode that starts MOSFET with the source electrode of anti-reverse MOSFET (VT1), slow starting power resistance R 10 is connected with sampling control circuit with the link of the slow drain electrode that starts MOSFET, connect with one end not being connected with the second bleeder circuit of the first bleeder circuit, the slow startup grid of MOSFET and the output of slow starting control circuit are connected, the input of slow starting control circuit is connected to the positive pole of input capacitance C1, the link of slow starting power resistance R 10 and the slow drain electrode that starts MOSFET is also connected to the negative pole of input capacitance C1, slow starting control circuit detects the voltage on input capacitance C1.

The slow MOSFET slow starting power resistance R 10 in parallel that starts, in the time powering on, the slow MOSFET that starts closes, by slow starting power resistance R 10 restriction start impulse currents, in the time that slow starting control circuit detects that voltage on input capacitance C1 approaches input voltage, drive the slow MOSFET of startup conducting, starting power resistance R 10 is delayed in short circuit, voltage between slow drain electrode (D) and the source electrode (S) that starts MOSFET of sampling control circuit sampling, when voltage between slow drain electrode and the source electrode that starts MOSFET is less than reference voltage, turn-off counnter attack MOSFET, while realizing DC power supply input short, prevent current flowing backwards, do not affect the anti-reverse function of input simultaneously.

Present embodiment starts MOSFET (VT3) and anti-reverse MOSFET (VT1) intermediate connection point as publicly to delay, in the time that power supply is normally worked, voltage between slow drain electrode and the source electrode that starts MOSFET is for just, voltage swing depends on the Rds (on) of input current and VT3, now, the partial pressure value that comparator D1 inverting input obtains is greater than the reference voltage of in-phase input end, the output voltage of comparator D1 approaches with reference to ground, anti-reverse MOSFET (VT1) normally; In the time of input short, voltage between slow drain electrode and the source electrode that starts MOSFET can reduce rapidly, even be reduced to negative value, this can cause the partial pressure value of the inverting input of comparator D1 to reduce rapidly, in the time that partial pressure value is less than the reference voltage of in-phase input end, comparator output HIGH voltage, triode VT2 conducting, the driving that drags down anti-reverse MOSFET makes it turn-off, and prevents current flowing backwards.

Power supply is in the time that minimum power input is unloaded; between the drain electrode of slow startup MOSFET and source electrode, there is minimum normal working voltage Vmin=Iin (min) * Rds (on); voltage between drain electrode and the source electrode of comparator D1 corresponding slow startup MOSFET while there is protection action should be less than Vmin; choose higher value simultaneously as far as possible; to guarantee in the time that circuit is normally worked; anti-reverse MOSFET conducting; in the time that generation input short is abnormal; comparator D1 moves as early as possible and turn-offs anti-reverse MOSFET, prevents current flowing backwards.

Change the first resistance R 6 and the second resistance R 8, the voltage can change comparator D1 action time between drain electrode and the source electrode of corresponding slow startup MOSFET, realizes and in the time that the slow MOSFET of startup flows through the little electric current of normal work or reverse current, turn-offs anti-reverse MOSFET.When circuit is normally worked, the voltage between slow drain electrode and the source electrode that starts MOSFET depends on the size of input current and the conducting resistance of MOSFET own.The second resistance R 8 may be born relatively high power at work, and power resistor is selected in suggestion.

Reverse-connection preventing circuit comprises anti-reverse MOSFET (VT1), anti-reverse bleeder circuit and the first diode VD1, the 5th resistance R 1 that anti-reverse bleeder circuit comprises series connection and the 6th resistance R 2, one end of anti-reverse bleeder circuit is connected with the grid of anti-reverse MOSFET, the other end is as the electrode input end of reverse-connection preventing circuit, the drain electrode of anti-reverse MOSFET is as the negative input of reverse-connection preventing circuit, the source electrode of anti-reverse MOSFET is connected with the slow source electrode that starts MOSFET, and the first diode VD1 is connected in parallel between the link of R1 and R2 and the source electrode of anti-reverse MOSFET.The collector electrode of triode VT2 is the link that is connected to R1 and R2.Between the link of R1 and R2 and the source electrode of anti-reverse MOSFET, be also parallel with the 7th resistance R 3.

Between the drain electrode of anti-reverse MOSFET and source electrode, be also parallel with two-way Transient Voltage Suppressor TVS (VD5).Two-way TVS is used for protecting anti-reverse MOSFET, prevents overvoltage (thunderbolt or surge or input short cause VT1 to bear larger voltage stress) damage.

For not adopting MOSFET to delay the circuit starting, can in circuit, seal in sampling resistor and replace the slow MOSFET of startup to be used for sampled voltage, can realize equally input counnter attack and fill with.But this scheme need to increase a resistance, have influence on cost and the PCB layout of power supply, reduce power-efficient simultaneously.

Present embodiment also provides a kind of DC power supply to input counnter attack irrigation method, comprising:

Voltage between drain electrode and the source electrode of the slow startup metal oxide semiconductor field effect tube MOSFET comprising in sampling control circuit sampling soft-start circuit;

When the voltage of sampling control circuit between slow drain electrode and the source electrode that starts MOSFET is less than reference voltage, controls the anti-reverse MOSFET comprising in reverse-connection preventing circuit and turn-off.

Using the tie point of the source electrode of anti-reverse MOSFET and the slow source electrode that starts MOSFET as publicly.

When the voltage of sampling control circuit between slow drain electrode and the source electrode that starts MOSFET is less than reference voltage, controlling the anti-reverse MOSFET comprising in reverse-connection preventing circuit turn-offs, comprise: sampling control circuit, in the time that the drain voltage of the slow startup MOSFET of sampling is less than the voltage publicly of sampling, turn-offs anti-reverse MOSFET.

Between the drain electrode of anti-reverse MOSFET and source electrode, be also parallel with two-way Transient Voltage Suppressor TVS, protect anti-reverse MOSFET, prevent that overvoltage from damaging.

Obviously, those skilled in the art should be understood that, above-mentioned of the present invention each module or each step can realize with general calculation element, they can concentrate on single calculation element, or be distributed on the network that multiple calculation elements form, alternatively, they can be realized with the executable program code of calculation element, thereby they can be stored in storage device and be carried out by calculation element, or they are made into respectively to each integrated circuit modules, or the multiple modules in them or step are made into single integrated circuit module to be realized.Like this, the present invention is not restricted to any specific hardware and software combination.

This is only the preferred embodiments of the present invention above, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (10)

1. circuit is filled with in a DC power supply input counnter attack, comprise: reverse-connection preventing circuit, soft-start circuit and sampling control circuit, described reverse-connection preventing circuit comprises anti-reverse metal oxide semiconductor field effect tube MOSFET, described soft-start circuit comprises the slow MOSFET of startup, voltage between drain electrode and the source electrode of the described slow startup MOSFET of described sampling control circuit sampling, when voltage between drain electrode and the source electrode of described slow startup MOSFET is less than reference voltage, controls described anti-reverse MOSFET and turn-off.
2. circuit as claimed in claim 1, is characterized in that:
The source electrode of described anti-reverse MOSFET is connected with the source electrode of described slow startup MOSFET, and tie point is as publicly, and the described slow drain electrode that starts MOSFET is connected with described sampling control circuit.
3. circuit as claimed in claim 1 or 2, is characterized in that, between the drain electrode of described anti-reverse MOSFET and source electrode, is also parallel with two-way Transient Voltage Suppressor TVS.
4. circuit as claimed in claim 2, it is characterized in that, described sampling control circuit comprises bleeder circuit, comparator and control valve, described bleeder circuit is connected to drain electrode and the described sampled voltage publicly of described slow startup MOSFET, first point of pressure side of described bleeder circuit is connected to the inverting input of described comparator, second point of pressure side of described bleeder circuit is connected to the in-phase input end of described comparator, the output of described comparator is connected to the input of described control valve, the control end of described control valve is connected to described anti-reverse MOSFET, described comparator is in the time that the drain voltage of the slow startup MOSFET of sampling is less than the voltage publicly of sampling, control described control valve and turn-off described anti-reverse MOSFET.
5. circuit as claimed in claim 4, it is characterized in that, at the inverting input of described comparator and be describedly also connected with the second diode in parallel and the 3rd diode between publicly, the voltage of inverting input described in clamp, relative the 3rd diode of described the second diode connects in the other direction.
6. circuit as claimed in claim 4, it is characterized in that, described control valve adopts triode, the base stage of described triode is as the input of described control valve, the collector and emitter of described triode is as the control end of described control valve, the collector electrode of described triode is connected to the grid of described anti-reverse MOSFET, and the emitter of described triode is connected to the source electrode of described anti-reverse MOSFET.
7. circuit as claimed in claim 6, is characterized in that, described comparator is in the time that the drain voltage of the slow startup MOSFET of sampling is less than the voltage publicly of sampling, output HIGH voltage, drive described triode conducting, drag down the driving of described anti-reverse MOSFET, close described anti-reverse MOSFET.
8. DC power supply is inputted a counnter attack irrigation method, comprising:
Voltage between drain electrode and the source electrode of the slow startup metal oxide semiconductor field effect tube MOSFET comprising in sampling control circuit sampling soft-start circuit;
When the voltage of described sampling control circuit between drain electrode and the source electrode of described slow startup MOSFET is less than reference voltage, controls the anti-reverse MOSFET comprising in reverse-connection preventing circuit and turn-off.
9. method as claimed in claim 8, is characterized in that, also comprises:
Using the tie point of the source electrode of the source electrode of described anti-reverse MOSFET and described slow startup MOSFET as publicly.
10. method as claimed in claim 9, is characterized in that, when the voltage of described sampling control circuit between drain electrode and the source electrode of described slow startup MOSFET is less than reference voltage, controls the anti-reverse MOSFET comprising in reverse-connection preventing circuit and turn-offs, and comprising:
Described sampling control circuit, in the time that the drain voltage of the slow startup MOSFET of sampling is less than the voltage publicly of sampling, turn-offs described anti-reverse MOSFET.
CN201210583448.1A 2012-12-28 2012-12-28 A kind of DC supply input counnter attack fills circuit and method CN103904620B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210583448.1A CN103904620B (en) 2012-12-28 2012-12-28 A kind of DC supply input counnter attack fills circuit and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210583448.1A CN103904620B (en) 2012-12-28 2012-12-28 A kind of DC supply input counnter attack fills circuit and method

Publications (2)

Publication Number Publication Date
CN103904620A true CN103904620A (en) 2014-07-02
CN103904620B CN103904620B (en) 2018-09-14

Family

ID=50995823

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210583448.1A CN103904620B (en) 2012-12-28 2012-12-28 A kind of DC supply input counnter attack fills circuit and method

Country Status (1)

Country Link
CN (1) CN103904620B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104378098A (en) * 2014-11-24 2015-02-25 苏州汇川技术有限公司 Electrifying buffer circuit and electrombile motor control system
CN104505807A (en) * 2014-12-10 2015-04-08 无锡必创传感科技有限公司 Automobile sensor protection circuit
CN105337260A (en) * 2014-08-13 2016-02-17 中兴通讯股份有限公司 Backward flowing current control method, backward flowing current control circuit and power converter
CN105790675A (en) * 2016-05-23 2016-07-20 青岛歌尔声学科技有限公司 Automatic leakage circuit for reverse electro-dynamic potential of motor
CN106655385A (en) * 2016-12-28 2017-05-10 深圳市科陆电子科技股份有限公司 Anti-reverse connection system and method applied to battery management unit equalization channels
WO2017167079A1 (en) * 2016-03-30 2017-10-05 中兴通讯股份有限公司 Power supply circuit and negative surge protection method
CN107359608A (en) * 2017-09-05 2017-11-17 山东超越数控电子有限公司 A kind of direct current prevents reversed protection circuit
CN108183469A (en) * 2018-01-02 2018-06-19 重庆长安汽车股份有限公司 One kind prevents flash driving power reverse-connection protection circuit and entire car controller
CN108599285A (en) * 2018-01-05 2018-09-28 许继电源有限公司 A kind of direct current output counnter attack filling protection circuit
CN109842108A (en) * 2019-02-25 2019-06-04 西安微电子技术研究所 A kind of grid-connected counnter attack filling power distribution equipment of multichannel high-current supply

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303374A (en) * 1997-04-25 1998-11-13 Robert Bosch Gmbh Electronic circuit provided with erroneous polarity connection protective part
CN201181903Y (en) * 2008-04-01 2009-01-14 中兴通讯股份有限公司 Input circuit of DC power supply
CN201898330U (en) * 2010-11-12 2011-07-13 无锡新茂科技有限责任公司 Reverse-connection-preventive circuit
CN102136724A (en) * 2011-01-26 2011-07-27 华为技术有限公司 Method and device for protecting reverse connection prevention and slow start of direct-current power supply input
CN102570785A (en) * 2010-12-30 2012-07-11 中兴通讯股份有限公司 Direct-current power supply hot plug slow starting control circuit and control method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303374A (en) * 1997-04-25 1998-11-13 Robert Bosch Gmbh Electronic circuit provided with erroneous polarity connection protective part
CN201181903Y (en) * 2008-04-01 2009-01-14 中兴通讯股份有限公司 Input circuit of DC power supply
CN201898330U (en) * 2010-11-12 2011-07-13 无锡新茂科技有限责任公司 Reverse-connection-preventive circuit
CN102570785A (en) * 2010-12-30 2012-07-11 中兴通讯股份有限公司 Direct-current power supply hot plug slow starting control circuit and control method
CN102136724A (en) * 2011-01-26 2011-07-27 华为技术有限公司 Method and device for protecting reverse connection prevention and slow start of direct-current power supply input

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105337260A (en) * 2014-08-13 2016-02-17 中兴通讯股份有限公司 Backward flowing current control method, backward flowing current control circuit and power converter
CN104378098A (en) * 2014-11-24 2015-02-25 苏州汇川技术有限公司 Electrifying buffer circuit and electrombile motor control system
CN104505807A (en) * 2014-12-10 2015-04-08 无锡必创传感科技有限公司 Automobile sensor protection circuit
WO2017167079A1 (en) * 2016-03-30 2017-10-05 中兴通讯股份有限公司 Power supply circuit and negative surge protection method
CN105790675A (en) * 2016-05-23 2016-07-20 青岛歌尔声学科技有限公司 Automatic leakage circuit for reverse electro-dynamic potential of motor
CN106655385A (en) * 2016-12-28 2017-05-10 深圳市科陆电子科技股份有限公司 Anti-reverse connection system and method applied to battery management unit equalization channels
CN107359608A (en) * 2017-09-05 2017-11-17 山东超越数控电子有限公司 A kind of direct current prevents reversed protection circuit
CN108183469A (en) * 2018-01-02 2018-06-19 重庆长安汽车股份有限公司 One kind prevents flash driving power reverse-connection protection circuit and entire car controller
CN108599285A (en) * 2018-01-05 2018-09-28 许继电源有限公司 A kind of direct current output counnter attack filling protection circuit
CN109842108A (en) * 2019-02-25 2019-06-04 西安微电子技术研究所 A kind of grid-connected counnter attack filling power distribution equipment of multichannel high-current supply

Also Published As

Publication number Publication date
CN103904620B (en) 2018-09-14

Similar Documents

Publication Publication Date Title
CN203166467U (en) Overvoltage protection circuit
CN102185484B (en) Switching power supply as well as control circuit and method thereof
DE102013217173A1 (en) Circuit arrangement comprising a half-bridge and circuit arrangement for driving a high-side switch
DE112004001850T5 (en) Single cycle controlled high-set topology without bridge (BLB) for power factor correction
CN102208864A (en) Switching device driving unit and semiconductor apparatus
CN102545582B (en) Bridgeless power factor correction circuit and control method thereof
CN101631410B (en) AC-DC LED drive circuit with high power factor
CN102570785A (en) Direct-current power supply hot plug slow starting control circuit and control method
US9189004B2 (en) Control circuit, control method used in PFC circuit and power source system thereof
CN102158067B (en) Starting circuit for switching power supply
CN101179198A (en) Synchronous commutation type battery charging circuit and protective circuit thereof
CN102130596B (en) Switching converter with wide input voltage range
TW201315145A (en) Power switch series circuit and control method thereof
US20130257390A1 (en) Power factor correction circuit
CN201898330U (en) Reverse-connection-preventive circuit
US8659919B2 (en) Circuit to improve light load power factor of power supply
CN201256290Y (en) Protection circuit for suppressing surge current and preventing input voltage reverse connection
CN104883038A (en) Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method
CN102324835A (en) Insulated gate bipolar transistor (IGBT) driving circuit
CN103441660A (en) Direct current power supply slow starting circuit of gateway device
CN102412720B (en) Switching power circuit and power factor correction (PFC) control circuit thereof
TWI599156B (en) Drive transformer isolation adaptive drive circuit
CN101867174B (en) IGBT short-circuit protection circuit in frequency converter and method thereof
CN103280765A (en) Overvoltage protection circuit
CN103066809B (en) Improved residual current device (RCD) buffer circuit applied to direct tandem type insulated gate bipolar translator (IGBT)

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20180613

Address after: 210012 No. 68, Bauhinia Road, Ningnan street, Yuhuatai District, Nanjing, Jiangsu

Applicant after: Nanjing Zhongxing Software Co., Ltd.

Address before: 518057 Nanshan District high tech Industrial Park, Shenzhen, Guangdong, Ministry of justice, Zhongxing Road, South China road.

Applicant before: ZTE Corporation

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20191104

Address after: 518057 Nanshan District science and Technology Industrial Park, Guangdong high tech Industrial Park, ZTE building

Patentee after: ZTE Communications Co., Ltd.

Address before: 210012 Nanjing, Yuhuatai District, South Street, Bauhinia Road, No. 68

Patentee before: Nanjing Zhongxing Software Co., Ltd.

TR01 Transfer of patent right