CN103904620B - A kind of DC supply input counnter attack fills circuit and method - Google Patents

A kind of DC supply input counnter attack fills circuit and method Download PDF

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Publication number
CN103904620B
CN103904620B CN201210583448.1A CN201210583448A CN103904620B CN 103904620 B CN103904620 B CN 103904620B CN 201210583448 A CN201210583448 A CN 201210583448A CN 103904620 B CN103904620 B CN 103904620B
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mosfet
circuit
voltage
reverse
delay startup
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CN103904620A (en
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朱厚存
李长远
梁新春
谢长江
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ZTE Corp
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Nanjing ZTE New Software Co Ltd
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Abstract

The invention discloses a kind of DC supply input counnter attacks to fill circuit and method, including:Reverse-connection preventing circuit, soft-start circuit and sampling control circuit, reverse-connection preventing circuit includes anti-reverse metal oxide semiconductor field effect tube MOSFET, soft-start circuit includes delay startup MOSFET, sampling control circuit samples the voltage between the drain electrode and source electrode of delay startup MOSFET, when voltage between the drain electrode and source electrode of delay startup MOSFET is less than reference voltage, anti-reverse MOSFET shutdowns are controlled.The present invention avoids that current flowing backwards occur when input short or input voltage quickly fall, so as to when DC/DC converters use full-bridge circuit, avoid that converter pair side synchronous rectification MOSFET drain-source voltage stress is caused to increase, damage MOSFET;Also, avoid, when reversed lightning surge occurs for input port, current flowing backwards occur, to avoid module input capacitance power down, caused power supply from exporting power down.

Description

A kind of DC supply input counnter attack fills circuit and method
Technical field
The present invention relates to power technique fields more particularly to a kind of DC supply input counnter attack to fill circuit and method.
Background technology
Current powerful direct-current switch power supply substantially uses metal oxide semiconductor field effect tube (MOSFET) real Existing counnter attack connection function.It is normal in input if Fig. 1 is that currently used MOSFET realizes anti-reverse circuit, MOSFET is connected, and the conduction impedance very little of MOSFET, and very little is lost, and circuit can work normally;In input reverse-connection, MOSFET cannot be connected, and effectively prevent circuit reversal connection.
But this circuit, in normal work, if there is input short failure suddenly, input capacitance can pass through input End carries out repid discharge, causes current flowing backwards.DC/DC (DC to DC) is if converter is electric using full-bridge in this case Road is likely to result in converter pair side synchronous rectification MOSFET drain-source voltage stress and increases, damages MOSFET;Input side is quick The heavy current impact that electric discharge generates is also possible to that DC power supply can be damaged.
If making reverse-connection preventing circuit using diode substitution MOSFET, electric current can be prevented when input short failure occurs It is anti-to fill, but diode is lost too big when large power supply works normally, and can seriously affect the efficiency of large power supply.For solution Certainly current flowing backwards problem when high-power DC power supply input short failure, it is necessary to the anti-circnit NOTs of MOSFET are improved, or Person increases additional counnter attack and fills circuit.
Invention content
The technical problem to be solved in the present invention is to provide a kind of DC supply input counnter attacks to fill circuit and method, can prop up Hold it is anti-reverse have no effect on power-efficient in the case of, prevent current flowing backwards in DC supply input short circuit.
In order to solve the above technical problems, a kind of DC supply input counnter attack of the present invention fills circuit, including:Anti-reverse electricity Road, soft-start circuit and sampling control circuit, the reverse-connection preventing circuit include anti-reverse metal oxide semiconductor field effect tube MOSFET, the soft-start circuit include delay startup MOSFET, and the sampling control circuit samples the delay startup MOSFET's Voltage between drain electrode and source electrode, when the voltage between the drain electrode and source electrode of the delay startup MOSFET is less than reference voltage, Control the anti-reverse MOSFET shutdowns.
Further, the source electrode of the anti-reverse MOSFET is connect with the source electrode of the delay startup MOSFET, and tie point is made For publicly, the drain electrode of the delay startup MOSFET is connect with the sampling control circuit.
Further, two-way transient voltage is also parallel between the drain electrode and source electrode of the anti-reverse MOSFET to inhibit Device TVS.
Further, the sampling control circuit includes bleeder circuit, comparator and control pipe, the bleeder circuit connection First partial pressure end of the drain electrode to the delay startup MOSFET and the publicly sampled voltage, the bleeder circuit is connected to institute The inverting input of comparator is stated, the second partial pressure end of the bleeder circuit is connected to the in-phase input end of the comparator, institute The output end for stating comparator is connected to the input terminal of the control pipe, and the control terminal of the control pipe is connected to described anti-reverse MOSFET, the comparator is when the drain voltage of the delay startup MOSFET of sampling is less than the voltage publicly of sampling, control The control pipe turns off the anti-reverse MOSFET.
Further, the inverting input of the comparator with it is described publicly between be also associated in parallel the two or two Pole pipe and third diode clamp the voltage of the inverting input, and second diode is with respect to third diode negative direction Connection.
Further, the control pipe uses triode, the input terminal of the base stage of the triode as the control pipe, Control terminal of the collector and emitter of the triode as the control pipe, the collector of the triode are connected to described The grid of anti-reverse MOSFET, the emitter of the triode are connected to the source electrode of the anti-reverse MOSFET.
Further, the comparator is less than the electricity publicly of sampling in the drain voltage of the delay startup MOSFET of sampling When pressure, output HIGH voltage drives the triode ON, drags down the driving of the anti-reverse MOSFET, closes described anti-reverse MOSFET。
Further, a kind of DC supply input counnter attack irrigation method, including:
The delay startup metal oxide semiconductor field effect tube for including in sampling control circuit sampling soft-start circuit Voltage between the drain electrode and source electrode of MOSFET;
Voltage of the sampling control circuit between the drain electrode and source electrode of the delay startup MOSFET is less than reference voltage When, control the anti-reverse MOSFET shutdowns for including in reverse-connection preventing circuit.
Further, further include:
Using the tie point of the source electrode of the anti-reverse MOSFET and the source electrode of the delay startup MOSFET as publicly.
Further, voltage of the sampling control circuit between the drain electrode and source electrode of the delay startup MOSFET is less than When reference voltage, the anti-reverse MOSFET shutdowns for including in reverse-connection preventing circuit are controlled, including:
The sampling control circuit is less than the voltage publicly of sampling in the drain voltage of the delay startup MOSFET of sampling When, turn off the anti-reverse MOSFET.
In conclusion the voltage between drain electrode and source electrode of the present invention by sampling delay startup MOS judges input short event Barrier, and realize the anti-current flowing backwards of DC supply input short circuit by controlling the anti-reverse MOSFET of shutdown, while not influencing to input Counnter attack connection function, the present invention avoids generation current flowing backwards when input short or input voltage quickly fall, and (i.e. DC power supply is defeated It is reversed to enter electric current), so as to when DC/DC converters use full-bridge circuit, avoid causing the side synchronous rectification of converter pair MOSFET drain-source voltage stress increases, and damages MOSFET;Also, it avoids, when reversed lightning surge occurs for input port, going out Existing current flowing backwards, to avoid module input capacitance power down, caused power supply exports power down, also, circuit of the present invention realizes letter It is single, it is at low cost, while in view of the lightning protection to anti-reverse MOSFET and comparator.
Description of the drawings
Fig. 1 is reverse-connection preventing circuit in the prior art;
Fig. 2 is that the DC supply input counnter attack of embodiment of the present invention fills the circuit diagram of circuit.
Specific implementation mode
The DC supply input counnter attack of present embodiment fills between the drain electrode and source electrode of circuit sampling delay startup MOSFET Voltage generates a control signal, drags down when the voltage between the drain electrode of delay startup MOSFET and source electrode is less than reference voltage The drive signal of anti-reverse MOSFET enables anti-reverse MOSFET turn off, prevents current flowing backwards, the energy on bulky capacitor passes through DC/ DC converters consume.
The DC supply input counnter attack of present embodiment fills circuit, including:Reverse-connection preventing circuit, soft-start circuit and sampling control Circuit processed, reverse-connection preventing circuit include anti-reverse MOSFET, and soft-start circuit includes delay startup MOSFET, sampling control circuit sampling Voltage between the drain electrode and source electrode of delay startup MOSFET, the voltage between the drain electrode and source electrode of delay startup MOSFET are less than ginseng When examining voltage, anti-reverse MOSFET shutdowns are controlled, realization prevents current flowing backwards.The source electrode and delay startup of anti-reverse MOSFET The source electrode of MOSFET connects, and tie point is as publicly.
Circuit is filled to the DC supply input counnter attack of present embodiment below in conjunction with the accompanying drawings to be described in further detail.
As shown in Fig. 2, the sampling control circuit of present embodiment includes bleeder circuit, comparator D1 and control pipe, partial pressure Circuit is connected to the drain electrode of delay startup MOSFET (VT3) and publicly sampled voltage, the first partial pressure end of bleeder circuit are connected to The inverting input of comparator D1, the second partial pressure end of bleeder circuit are connected to the in-phase input end of comparator D1, comparator D1 Output end be connected to the input terminal of control pipe, the control terminal of control pipe is connected to anti-reverse MOSFET (VT1), and comparator D1 exists When the drain voltage of the delay startup MOSFET (VT3) of sampling is less than the voltage publicly of sampling, control control pipe turns off counnter attack Meet MOSFET.
Bleeder circuit includes the first bleeder circuit and the second bleeder circuit, and the first bleeder circuit includes concatenated first resistor R6 and second resistance R8, the second bleeder circuit include concatenated 3rd resistor R7 and the 4th resistance R9, the one of the first bleeder circuit End is connect with one end of the second bleeder circuit, and the one end of the first bleeder circuit not connect with the second bleeder circuit is connected to slow open Drain electrode (VT3) sampled voltage of dynamic MOSFET, the one end of the second bleeder circuit not connect with the first bleeder circuit is connected to public affairs Sampled voltage altogether, the connecting pin of first resistor R6 and second resistance R8 is as the first partial pressure end, the electricity of 3rd resistor R7 and the 4th The connecting pin of R9 is hindered as the second partial pressure end.One end that first bleeder circuit is connected with the second bleeder circuit is also associated with reference Voltage (Vref)。
Control pipe uses triode VT2, the input terminal of the base stage of triode VT2 as control pipe, the current collection of triode VT2 The control terminal of pole and emitter as control pipe, the collector of triode VT2 are connected to the grid of anti-reverse MOSFET, triode The emitter of VT2 is connected to the source electrode of anti-reverse MOSFET.
The anode of comparator D1 is connected to boost voltage (PVCC), and cathode is connected to publicly;The output end of comparator D1 The 7th resistance R4 is also in series between the base stage of triode VT2, comparator D1 anode and the output end of comparator D1 it Between be also associated with the 8th resistance R5.Comparator D1 is less than same in the drain voltage of the delay startup MOSFET of the sampling of inverting input When the voltage publicly of the sampling of phase input terminal, output HIGH voltage, driving triode VT2 conductings drag down anti-reverse MOSFET Driving, close anti-reverse MOSFET.
Comparator D1 inverting input with publicly between be also associated with the second diode VD3 and the three or two in parallel Pole pipe VD4 clamps the voltage of inverting input, prevents input overvoltage damage comparison device.Second diode VD3 is with respect to the three or two Pole pipe VD4 negative directions connect, i.e.,:The inverting input of the cathode connection comparator of second diode VD3, anode connection are public Ground;The inverting input of the anode connection comparator of third diode VD4, cathode connect publicly;Alternatively, on the contrary, second The inverting input of the anode connection comparator of diode VD3, cathode connect publicly;The cathode of third diode VD4 connects The inverting input of comparator, anode connection is publicly.
Soft-start circuit includes delay startup MOSFET (VT3), delay startup power resistor R10 and slow starting control circuit, is delayed Startup power resistance R10 is in parallel with delay startup MOSFET, the connection of the source electrode of delay startup power resistor R10 and delay startup MOSFET End and the source electrode of anti-reverse MOSFET (VT1) are connected to publicly, the leakage of delay startup power resistor R10 and delay startup MOSFET The connecting pin of pole is connect with sampling control circuit, i.e., connects with the one end of the first bleeder circuit not connect with the second bleeder circuit It connects, the grid of delay startup MOSFET and the output end of slow starting control circuit connect, the input terminal connection of slow starting control circuit It is also connected to input to the connecting pin of the anode of input capacitance C1, the drain electrode of delay startup power resistor R10 and delay startup MOSFET The cathode of capacitance C1, slow starting control circuit detect the voltage on input capacitance C1.
Delay startup MOSFET parallel connection delay startup power resistor R10, when powering on, delay startup MOSFET is closed, and is opened by slow Dynamic power resistor R10 limitations booting dash current, when slow starting control circuit detects the voltage on input capacitance C1 close to defeated When entering voltage, the MOSFET conductings of driving delay startup, short-circuit delay startup power resistor R10, sampling control circuit sampling delay startup Voltage between the drain electrode (D) and source electrode (S) of MOSFET, the voltage between the drain electrode and source electrode of delay startup MOSFET are less than ginseng When examining voltage, counnter attack MOSFET is turned off, current flowing backwards are prevented when realizing DC supply input short circuit, while not influencing to input counnter attack Connection function.
Present embodiment using delay startup MOSFET (VT3) and anti-reverse MOSFET (VT1) intermediate connection points as publicly, When power supply works normally, the voltage between the drain electrode and source electrode of delay startup MOSFET is that just, voltage swing depends on input current With the Rds (on) of VT3, at this point, the obtained partial pressure value of comparator D1 inverting inputs is more than the reference voltage of in-phase input end, than Output voltage compared with device D1 is close to reference ground, anti-reverse MOSFET (VT1) normally;In input short, delay startup Voltage between the drain electrode and source electrode of MOSFET can be reduced rapidly, and be even reduced to negative value, this can cause the reverse phase of comparator D1 defeated The partial pressure value for entering end is reduced rapidly, when partial pressure value is less than the reference voltage of in-phase input end, comparator output HIGH voltage, and three poles Pipe VT2 conductings, the driving for dragging down anti-reverse MOSFET enable its shutdown, prevent current flowing backwards.
There is minimum normal work when minimum power input is unloaded, between the drain electrode and source electrode of delay startup MOSFET in power supply The drain electrode of corresponding delay startup MOSFET and source when protection act occur for voltage Vmin=Iin (min) * Rds (on), comparator D1 The voltage of interpolar should be less than Vmin, while choose higher value as possible, to ensure that anti-reverse MOSFET is led when circuit works normally Logical, when input short exception occurs, comparator D1 acts the anti-reverse MOSFET of shutdown as early as possible, prevents current flowing backwards.
Change first resistor R6 and second resistance R8, thus it is possible to vary corresponding delay startup MOSFET when comparator D1 actions Voltage between drain electrode and source electrode is realized and turns off counnter attack when delay startup MOSFET flows through normal work low current or reverse current Meet MOSFET.When circuit works normally, voltage between the drain electrode and source electrode of delay startup MOSFET depend on input current and The size of MOSFET conducting resistances itself.Second resistance R8 may bear relatively high power at work, it is proposed that selection power resistor.
Reverse-connection preventing circuit includes anti-reverse MOSFET (VT1), anti-reverse bleeder circuit and the first diode VD1, anti-reverse Bleeder circuit includes concatenated 5th resistance R1 and the 6th resistance R2, and one end of anti-reverse bleeder circuit is with anti-reverse MOSFET's Grid connects, electrode input end of the other end as reverse-connection preventing circuit, and the drain electrode of anti-reverse MOSFET is as reverse-connection preventing circuit The source electrode of negative input, anti-reverse MOSFET is connect with the source electrode of delay startup MOSFET, the first diode VD1 be connected in parallel on R1 and Between the connecting pin of R2 and the source electrode of anti-reverse MOSFET.The collector of triode VT2 is attached to the connecting pin of R1 and R2. The 7th resistance R3 is also parallel between the connecting pin of R1 and R2 and the source electrode of anti-reverse MOSFET.
Two-way Transient Voltage Suppressor TVS (VD5) is also parallel between the drain electrode and source electrode of anti-reverse MOSFET.It is double To TVS be used for protecting anti-reverse MOSFET, preventing overvoltage, (lightning stroke or surge or input short cause VT1 to bear larger electricity Compression) damage.
For not using MOSFET to carry out the circuit of delay startup, sampling resistor can be sealed in circuit and replaces delay startup MOSFET is used for sampled voltage, and input counnter attack equally may be implemented and fill.But this scheme needs to increase a resistance, influences Cost and PCB to power supply are laid out, while reducing power-efficient.
Present embodiment additionally provides a kind of DC supply input counnter attack irrigation method, including:
The delay startup metal oxide semiconductor field effect tube for including in sampling control circuit sampling soft-start circuit Voltage between the drain electrode and source electrode of MOSFET;
When voltage of the sampling control circuit between the drain electrode and source electrode of delay startup MOSFET is less than reference voltage, control is anti- The anti-reverse MOSFET shutdowns for including in reversal connection circuit.
Using the tie point of the source electrode of anti-reverse MOSFET and the source electrode of delay startup MOSFET as publicly.
When voltage of the sampling control circuit between the drain electrode and source electrode of delay startup MOSFET is less than reference voltage, control is anti- The anti-reverse MOSFET shutdowns for including in reversal connection circuit, including:Drain electrode of the sampling control circuit in the delay startup MOSFET of sampling When voltage is less than the voltage publicly of sampling, anti-reverse MOSFET is turned off.
Two-way Transient Voltage Suppressor TVS is also parallel between the drain electrode and source electrode of anti-reverse MOSFET, protection is anti- Reversal connection MOSFET, prevents overvoltage from damaging.
Obviously, those skilled in the art should be understood that each module of the above invention or each step can be with general Computing device realize that they can be concentrated on a single computing device, or be distributed in multiple computing devices and formed Network on, optionally, they can be realized with the program code that computing device can perform, so as to be stored in It is performed by computing device in storage device, either they are fabricated to each integrated circuit modules or will be in them Multiple modules or step be fabricated to single integrated circuit module to realize.In this way, the present invention is not limited to any specific hard Part and software combine.
Above this is merely a preferred embodiment of the present invention, and is not intended to restrict the invention, for the technology of this field For personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of DC supply input counnter attack fills circuit, including:Reverse-connection preventing circuit, soft-start circuit and sampling control circuit, institute It includes anti-reverse metal oxide semiconductor field effect tube MOSFET to state reverse-connection preventing circuit, and the soft-start circuit includes delay startup The gentle startup power resistance of MOSFET, the sampling control circuit sample between the drain electrode and source electrode of the delay startup MOSFET Voltage, when the voltage between the drain electrode and source electrode of the delay startup MOSFET is less than reference voltage, control is described anti-reverse MOSFET is turned off;The delay startup MOSFET delay startup power resistors in parallel, when powering on, delay startup MOSFET is closed, Booting dash current is limited by delay startup power resistor, when slow starting control circuit detects that the voltage in input capacitance is close When input voltage, the MOSFET conductings of driving delay startup, the short circuit delay startup power resistor.
2. circuit as described in claim 1, it is characterised in that:
The source electrode of the anti-reverse MOSFET is connect with the source electrode of the delay startup MOSFET, and tie point is used as publicly, described The drain electrode of delay startup MOSFET is connect with the sampling control circuit.
3. circuit as claimed in claim 1 or 2, which is characterized in that between the drain electrode and source electrode of the anti-reverse MOSFET Also it is parallel with two-way Transient Voltage Suppressor TVS.
4. circuit as claimed in claim 2, which is characterized in that the sampling control circuit include bleeder circuit, comparator and Control pipe, the bleeder circuit are connected to the drain electrode of the delay startup MOSFET and the publicly sampled voltage, the partial pressure First partial pressure end of circuit is connected to the inverting input of the comparator, and the second partial pressure end of the bleeder circuit is connected to institute The in-phase input end of comparator is stated, the output end of the comparator is connected to the input terminal of the control pipe, the control pipe Control terminal is connected to the anti-reverse MOSFET, and drain voltage of the comparator in the delay startup MOSFET of sampling is less than sampling Voltage publicly when, control the control pipe and turn off the anti-reverse MOSFET.
5. circuit as claimed in claim 4, which is characterized in that the comparator inverting input with it is described publicly it Between be also associated with the second diode in parallel and third diode, clamp the voltage of the inverting input, the two or two pole The opposite third diode negative direction connection of pipe.
6. circuit as claimed in claim 4, which is characterized in that the control pipe uses triode, the base stage of the triode As the input terminal of the control pipe, the control terminal of the collector and emitter of the triode as the control pipe is described The collector of triode is connected to the grid of the anti-reverse MOSFET, and the emitter of the triode is connected to described anti-reverse The source electrode of MOSFET.
7. circuit as claimed in claim 6, which is characterized in that drain electrode electricity of the comparator in the delay startup MOSFET of sampling Pressure less than sampling voltage publicly when, output HIGH voltage drives the triode ON, drags down the anti-reverse MOSFET Driving, close the anti-reverse MOSFET.
8. a kind of DC supply input counnter attack irrigation method, including:
The delay startup metal oxide semiconductor field effect tube MOSFET for including in sampling control circuit sampling soft-start circuit Voltage between drain electrode and source electrode;
When voltage of the sampling control circuit between the drain electrode and source electrode of the delay startup MOSFET is less than reference voltage, control The anti-reverse MOSFET shutdowns for including in reverse-connection preventing circuit processed;
The method further includes:
The delay startup MOSFET parallel connections delay startup power resistor, when powering on, delay startup MOSFET is closed, and passes through delay startup work( Rate resistance limitation booting dash current, when slow starting control circuit detects the voltage in input capacitance close to input voltage, Drive delay startup MOSFET conductings, the short circuit delay startup power resistor.
9. method as claimed in claim 8, which is characterized in that further include:
Using the tie point of the source electrode of the anti-reverse MOSFET and the source electrode of the delay startup MOSFET as publicly.
10. method as claimed in claim 9, which is characterized in that the sampling control circuit is the delay startup MOSFET's When voltage between drain electrode and source electrode is less than reference voltage, the anti-reverse MOSFET shutdowns for including in reverse-connection preventing circuit, packet are controlled It includes:
The sampling control circuit is closed when the drain voltage of the delay startup MOSFET of sampling is less than the voltage publicly of sampling Break the anti-reverse MOSFET.
CN201210583448.1A 2012-12-28 2012-12-28 A kind of DC supply input counnter attack fills circuit and method Active CN103904620B (en)

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