CN101872967B - IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit - Google Patents
IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit Download PDFInfo
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- CN101872967B CN101872967B CN 200910106892 CN200910106892A CN101872967B CN 101872967 B CN101872967 B CN 101872967B CN 200910106892 CN200910106892 CN 200910106892 CN 200910106892 A CN200910106892 A CN 200910106892A CN 101872967 B CN101872967 B CN 101872967B
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Abstract
The invention relates to an IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit. The circuit is characterized by comprising impedances Z1, Z2 and Z3 and a diode D1, wherein one end of the impedance Z1 is connected with a power supply (VCC), while the other end is connected with one end of the impedance Z2 and the anode of the diode D1; the cathode of the diode D1 is connected with a collector electrode C of the IGBT; the other end of the impedance Z2 is connected with one end of the impedance Z3 and used for outputting IGBT protection signals; and the other end of the impedance Z3 is connected with a drive electrode G of the IGBT. In the situation that the IGBT is broken down, the IGBT circuit can be in a protection state.
Description
Technical field
The present invention relates to a kind of breakdown protection circuit, relate in particular to the breakdown protection circuit on a kind of IGBT.
Background technology
At power electronics and power electronics field, a kind of electric energy is converted to the device that another kind of electric energy (such as 3 volts of 5 volts of direct currents conversion direct currents) carries out power transfer is called converter, in the electric energy conversion, play the parts alternation of corrective action at the converter of opening (being conducting) and pass (i.e. cut-off) state, just be called switch converters.In the recent decade, the development of power electronic technology and power electronic technology is very swift and violent.As the basic power electronic device of power electronic technology and technical field of power electronics, the full-control type device take IGBT as representative has been obtained significant progress, becomes the main flow device.Thereby brought revolutionary variation for power electronics and power electronic conversion (stream) technology and application thereof.
Security of operation (preventing overcurrent damage, over-voltage breakdown) as the basic power electronic device IGBT of power electronic technology and technical field of power electronics has obtained the very attention of height.The running current of IGBT has surpassed rated value, causes IGBT to damage and is called overcurrent damage.The working voltage of IGBT has surpassed rated value, causes IGBT to damage and is called the over-voltage breakdown damage.
The over-voltage breakdown protective circuit of present IGBT mostly adopts following several typical scenarios: reduce loop stray inductance, reduction IGBT turn-off speed, reasonable Arrangement absorption buffer circuit etc.Power electronic device is very responsive to voltage, in case working voltage surpasses the maximum rating that device allows, device will damage immediately.Therefore people have analyzed the superpotential reason of a variety of generations, and suppress protection.But this several method can only suppress the category that we have known, has no initiative.Often the part power electronic device can run into the category that we also do not know when operation, and the power electronic device of other parts also operates in the safe category of knowing.At this moment, place oneself in the midst of the part power electronic device of current environment and can only damage, because the inhibition protective circuit that adopts has no initiative, control centre can not know timely that current ruuning situation will continue to keep running status.Therefore, the damage of part power electronic device will bring the chain reaction meeting to damage other power electronic device, so that install large tracts of land and damage and install fully and damage.Overvoltage is to keep away unavoidably fully, and effective over-voltage suppression safeguard measure, the but not have characteristics initiatively protected in the IGBT protective circuit scheme with regard to prior art can not effectively reduce impaired area.
Summary of the invention
The technical problem that the present invention solves is: the present invention is by making up a kind of IGBT breakdown protection circuit, overcomes that the IGBT protective circuit lacks initiatively protection in the prior art, can not effectively reduce the technical problem of impaired area.
The technical scheme of technical solution problem of the present invention is: make up a kind of IGBT breakdown protection circuit; comprise impedance Z 1; Z2; Z3 and diode D1; it is characterized in that; one end of described impedance Z 1 connects power supply VCC; the other end is connected with an end of described impedance Z 2 and the positive pole of described diode D1; the negative pole of described diode D1 is connected with the collector electrode C of IGBT; the other end of described impedance Z 2 links to each other with an end of impedance Z 3 and exports simultaneously the guard signal of IGBT; the other end of described impedance Z 3 links to each other with the drive electrode G of IGBT; also comprise the guard signal processing module; control centre's module; described guard signal processing module links to each other with the IGBT guard signal output of described impedance Z 2; receive the guard signal of described impedance Z 2 outputs and process; described control centre module is connected with the guard signal processing module and receives the signal that the guard signal processing module is processed, and described control centre module is according to the driving of the signal controlling IGBT that receives.
The further technical scheme of technical solution problem of the present invention is: also comprise guard signal processing module, control centre's module; the IGBT guard signal output of described guard signal processing module links to each other with described impedance Z 2; receive the guard signal of described impedance Z 2 outputs and process; described control centre module is connected with the guard signal processing module and receives the signal that the guard signal processing module is processed, and described control centre module is according to the driving of the signal controlling IGBT that receives.
The further technical scheme of technical solution problem of the present invention is: described smooth lotus root U1 also comprises light-emitting diode, and described light-emitting diode on state threshold voltage is 1.2 volts, conduction threshold electric current 2mA, and multiplication factor is 10.
The further technical scheme of technical solution problem of the present invention is: described transmission means is the isolation transmission of the electromagnetic isolation modes such as the light isolation method such as the direct transmission of resistance or the direct-connected mode of electric capacity or light lotus root or optical fiber or transformer.
The further technical scheme of technical solution problem of the present invention is: described two totalitarity pipe D1 are fast recovery diode or Ultrafast recovery diode.
The further technical scheme of technical solution problem of the present invention is: described IGBT is many series connection, many parallel connections or many connection in series-parallel.
The technique effect that technical solution of the present invention produces is: by making up a kind of IGBT breakdown protection circuit; the technical program runs into the breakdown situation of IGBT in the IGBT use procedure, can cause C-E voltage and reduce to zero volt; A point output level is low, makes the IGBT circuit be in guard mode.Further can notify timely control centre situation about having damaged, make control centre out of service and make timely and effectively other measure, make impaired area keep current state, to prevent bringing the damage of device large tracts of land or whole device to damage fully because continuing operation, consequently produce chain reaction relevant device is damaged.
Description of drawings
Fig. 1 is structure chart of the present invention.
Fig. 2 is control structure figure of the present invention.
Fig. 3 is guard signal modular structure figure of the present invention.
Fig. 4 is IGBT johning knot composition of the present invention
Fig. 5 is the structure chart of embodiment of the present invention structure.
Embodiment
Below in conjunction with specific embodiment, technical solution of the present invention is further specified.
As shown in Figure 1; the present invention makes up a kind of IGBT breakdown protection circuit; it is characterized in that; comprise impedance Z 1, Z2, Z3 and diode D1; it is characterized in that; one end of described impedance Z 1 connects power supply VCC; the other end is connected with an end of described impedance Z 2 and the positive pole of described diode D1; the negative pole of described diode D1 is connected with the collector electrode C of IGBT; the other end of described impedance Z 2 links to each other with an end of impedance Z 3 and the protection output of IGBT, and the other end of described impedance Z 3 links to each other with the drive electrode G of IGBT.The present invention carries out dividing potential drop by the connection of Z1, Z2, Z3 to the IGBT circuit, thereby the IGBT circuit is protected.
As shown in Figure 1, during normal operation, when IGBT driver module output low level, V2 is in off state.Because of the high backward voltage of D1, D2, the A of this protective circuit point output level is high, and this circuit working is normal, makes this circuit be in not guard mode; When IGBT driver module output high level, V1 is in opening state.D1, D2 forward conduction, A point output level are high, and this circuit working is normal, makes this circuit be in not guard mode.When IGBT driver module output low level, V2 causes C-E voltage and reduces to zero volt because puncturing, and A point output level is low, makes this circuit be in guard mode.
Such as Fig. 2, shown in Figure 3; IGBT breakdown protection circuit of the present invention also comprises guard signal processing module, control centre's module; the IGBT guard signal output of described guard signal processing module links to each other with described impedance Z 2; receive the guard signal of described impedance Z 2 outputs and process; described control centre module is connected with the guard signal processing module and receives the signal that the guard signal processing module is processed, and described control centre module is according to the driving of the signal controlling IGBT that receives.Described guard signal processing module also comprises light lotus root U1; the positive pole of the light-emitting diode among the described smooth lotus root U1 links to each other with the IGBT guard signal output of described impedance Z 2, converts the signal of telecommunication to after the signal of telecommunication of protecting output output is transmitted by the light isolation again and isolates transmission.Described smooth lotus root U1 also comprises light-emitting diode, and described light-emitting diode on state threshold voltage is 1.2 volts, conduction threshold electric current 2mA, and multiplication factor is 10.Described transmission means is the isolation transmission of the electromagnetic isolation modes such as the light isolation method such as the direct transmission of resistance or the direct-connected mode of electric capacity or light lotus root or optical fiber or transformer.The forward conduction voltage drop of described diode D1 is 0.5 volt, oppositely withstand voltage 1000 volts.Described diode D1 is that fast recovery diode or Ultrafast recovery diode can recover at a high speed soon.
As shown in Figure 2, during normal operation, when IGBT driver module output low level, V2 is in off state.Because of the high backward voltage of D1, D2, the A of this protective circuit point output level is high, and former limit (light-emitting diode) conducting of U1 is luminous, the secondary output low level, this circuit working is normal, and control centre judges that this circuit is in normal condition, makes this circuit be in not guard mode; When IGBT driver module output high level, V1 is in opening state.D1, D2 forward conduction, A point output level are high, and this circuit working is normal, makes this circuit be in not guard mode.When IGBT driver module output low level; V2 causes C-E voltage and reduces to zero volt because puncturing, and A point output level is low; make this circuit be in guard mode; at this moment, after control centre's module receives protection information, immediately running status is become halted state; V1 associated therewith does not rerun; the IGBT circuit has obtained protection, and related device does not damage yet, and prevents from causing large-area circuit to damage.
Such as Fig. 4, as shown in Figure 5; described IGBT can many series connection, many parallel connections or many connection in series-parallel; these many series, parallel or series-parallel IGBT receive described IGBT breakdown protection circuit in the same way, with above-mentioned same running, can be protected.
Above content is the further description of the present invention being done in conjunction with concrete preferred implementation, can not assert that implementation of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (6)
1. IGBT breakdown protection circuit; it is characterized in that; comprise impedance Z 1; Z2; Z3 and diode D1; it is characterized in that; one end of described impedance Z 1 connects power supply VCC; the other end is connected with an end of described impedance Z 2 and the positive pole of described diode D1; the negative pole of described diode D1 is connected with the collector electrode C of IGBT; the other end of described impedance Z 2 links to each other with an end of impedance Z 3 and exports simultaneously the guard signal of IGBT; the other end of described impedance Z 3 links to each other with the drive electrode G of IGBT; also comprise the guard signal processing module; control centre's module; described guard signal processing module links to each other with the IGBT guard signal output of described impedance Z 2; receive the guard signal of described impedance Z 2 outputs and process; described control centre module is connected with the guard signal processing module and receives the signal that the guard signal processing module is processed, and described control centre module is according to the driving of the signal controlling IGBT that receives.
2. IGBT breakdown protection circuit according to claim 1; it is characterized in that; described guard signal processing module also comprises optocoupler U1; the positive pole of the light-emitting diode among the described optocoupler U1 links to each other with the IGBT guard signal output of described impedance Z 2, converts the signal of telecommunication of described IGBT guard signal output output to the signal of telecommunication after by light isolation transmission again and isolates transmission.
3. IGBT breakdown protection circuit according to claim 2 is characterized in that, described optocoupler U1 also comprises light-emitting diode, and described light-emitting diode conducting valve threshold voltage is 1.2 volts, conduction threshold electric current 2mA, and multiplication factor is 10.
4. IGBT breakdown protection circuit according to claim 2 is characterized in that, described transmission means is the direct transmission of resistance or the direct-connected mode of electric capacity or the isolation transmission of optocoupler or optical fiber isolation method or transformer electromagnetic isolation mode.
5. according to claim 1 to the described IGBT breakdown protection circuit of 4 any one, it is characterized in that described diode D1 is fast recovery diode or Ultrafast recovery diode.
6. according to claim 1 to the described IGBT breakdown protection circuit of 4 any one, it is characterized in that described IGBT is many series connection or many parallel connections or many connection in series-parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910106892 CN101872967B (en) | 2009-04-24 | 2009-04-24 | IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910106892 CN101872967B (en) | 2009-04-24 | 2009-04-24 | IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit |
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| CN101872967A CN101872967A (en) | 2010-10-27 |
| CN101872967B true CN101872967B (en) | 2013-10-16 |
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| CN 200910106892 Expired - Fee Related CN101872967B (en) | 2009-04-24 | 2009-04-24 | IGBT (Insulated Gate Bipolar Transistor) breakdown protection circuit |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103558799B (en) * | 2013-11-04 | 2017-01-04 | 中航太克（厦门）电子技术股份有限公司 | IGBT module breakdown protection circuit |
| CN104883058B (en) * | 2015-06-30 | 2018-03-02 | 湖南科瑞变流电气股份有限公司 | One kind is based on the series-parallel power supplys of IGBT |
| WO2017045071A1 (en) * | 2015-09-14 | 2017-03-23 | Tm4 Inc. | Power converter configured for limiting switching overvoltage |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0803955A3 (en) * | 1996-04-25 | 1998-05-20 | Texas Instruments Incorporated | An electrostatic discharge protection circuit |
| CN2513117Y (en) * | 2001-09-27 | 2002-09-25 | 鞍山荣信电力电子股份有限公司 | Photoelectric converting circuit of thyristor breakdown detection |
| EP0825633B1 (en) * | 1996-08-22 | 2004-09-22 | Thomson Consumer Electronics, Inc. | Breakdown event detector |
| CN101174788A (en) * | 2007-10-22 | 2008-05-07 | 株洲南车时代电气股份有限公司 | Cut-out overvoltage protection circuit of electric voltage driving type power semiconductor device |
-
2009
- 2009-04-24 CN CN 200910106892 patent/CN101872967B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0803955A3 (en) * | 1996-04-25 | 1998-05-20 | Texas Instruments Incorporated | An electrostatic discharge protection circuit |
| EP0825633B1 (en) * | 1996-08-22 | 2004-09-22 | Thomson Consumer Electronics, Inc. | Breakdown event detector |
| CN2513117Y (en) * | 2001-09-27 | 2002-09-25 | 鞍山荣信电力电子股份有限公司 | Photoelectric converting circuit of thyristor breakdown detection |
| CN101174788A (en) * | 2007-10-22 | 2008-05-07 | 株洲南车时代电气股份有限公司 | Cut-out overvoltage protection circuit of electric voltage driving type power semiconductor device |
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| CN101872967A (en) | 2010-10-27 |
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Owner name: SHENZHEN CLOU ELECTRONICS CO., LTD. Free format text: FORMER NAME: SHENZHEN CLOU INVERTER CO., LTD. |
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Address after: A road, industrial park of Longgang District of Shenzhen City, Guangdong province 518000 Longgang Street Baolong 2 factory buildings and 2 layer 1 Patentee after: SHENZHEN CLOU DRIVE TECHNOLOGY CO., LTD. Address before: 518000 Guangdong city of Shenzhen province Nanshan District Xili Town, dragon village first Dong Industrial Zone D Patentee before: Shenzhen Clou Inverter Co., Ltd. |
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Granted publication date: 20131016 Termination date: 20210424 |