CN202455252U - IGBT driving circuit of megawatt wind power converter - Google Patents

IGBT driving circuit of megawatt wind power converter Download PDF

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Publication number
CN202455252U
CN202455252U CN 201120502137 CN201120502137U CN202455252U CN 202455252 U CN202455252 U CN 202455252U CN 201120502137 CN201120502137 CN 201120502137 CN 201120502137 U CN201120502137 U CN 201120502137U CN 202455252 U CN202455252 U CN 202455252U
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China
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resistance
diode
igbt
triode
connect
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CN 201120502137
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程鹏
周维来
裴景斌
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HARBIN JIUZHOU ELECTRICAL TECHNOLOGY CO LTD
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HARBIN JIUZHOU ELECTRICAL TECHNOLOGY CO LTD
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/70—Wind energy
    • Y02E10/76—Power conversion electric or electronic aspects

Abstract

The utility model provides an IGBT (Insulated Gate Bipolar Transistor) driving circuit of a megawatt wind power converter. The IGBT driving circuit comprises a module switching unit ADG202, an IGBT, an IGBT collector circuit and an IGBT gate pole circuit, wherein the module switching unit ADG202 is respectively connected with the IGBT collector circuit and the IGBT gate pole circuit; and the IGBT collector and the IGBT gate pole circuit are connected with the IGBT. According to the utility model, the IGBT driving circuit can ensure reliable switching on/off of the IGBT under a condition of high power, reduce the consumption of the IGBT, and also can ensure the reliable switching off of the IGBT under conditions of over-current and over-voltage, thereby guaranteeing the safe and reliable operation of a generator set.

Description

Megawatt-level wind current transformer IGBT drive circuit
Technical field
The utility model relates to wind electric converter, is exactly megawatt-level wind current transformer IGBT drive circuit specifically.
Background technology
Wind Power Utilization has received the generally attention of countries in the world.The variable-speed constant-frequency wind power generation technology has also obtained general application, and it is incorporated into power electronic technology, vector control technology and microcomputer information treatment technology in the control of generator, thereby has obtained a kind of brand-new, high-quality electric energy obtain manner.Along with the increase of wind-powered electricity generation unit single-machine capacity and wind energy turbine set scale, the operational efficiency of wind turbine generator, fail safe and stability are just more important.The MW class wind turbine group has become international mainstream model at present, and the power grade of the insulated gate bipolar transistor (IBGT) that is adopted in the MW class current transformer is higher, and the drive protecting technology of IGBT is also had higher requirement.
Summary of the invention
The purpose of the utility model is to provide a kind of megawatt-level wind current transformer IGBT drive circuit.
The purpose of the utility model is achieved in that it is made up of module switch device ADG202, insulated gate bipolar transistor IGBT, IGBT collector circuit and IGBT gate pole circuit; Module switch device ADG202 connects IGBT collector circuit and IGBT gate pole circuit respectively, and the IGBT collector circuit is connected insulated gate bipolar transistor IGBT with IGBT gate pole circuit.
The utility model also has following technical characterictic:
(1) described IGBT collector circuit comprises resistance R 4, triode N 1, resistance R 5, resistance R 6, triode N 2, resistance R 18, diode Z 1, resistance R 2, resistance R 19, comparator LM111, resistance R 1, potentiometer P 1, diode Z 2, diode D 7, resistance R 7, diode D 1, capacitor C 3, triode N 1Emitter connect resistance R 4An end and the pin D of module switch device ADG202 2, triode N 1Collector electrode connect resistance R respectively 4The other end, resistance R 6An end, resistance R 2An end, resistance R 1An end and+15V, resistance R 5The other end connect resistance R respectively 6The other end and triode N 2Collector electrode, triode N 2Grounded emitter, triode N 2Base stage connect resistance R 18An end, resistance R 18The other end connect diode Z 1Positive pole, diode Z 1Negative pole connect output, the resistance R of comparator LM111 respectively 2The other end, resistance R 19An end and the pin IN of module switch device ADG202 2, the in-phase input end of comparator LM111 connects resistance R respectively 19The other end, resistance R 1The other end and potentiometer P 1An end, potentiometer P 1Other end ground connection, the inverting input of comparator LM111 connects diode Z respectively 2Negative pole, diode D 7Positive pole, capacitor C 3An end and diode D 1Negative pole, capacitor C 3Other end ground connection, diode D 1Positive pole connect resistance R 7, resistance R 7The pin S of other end link block switching device ADG202 1, diode D 7Negative pole connect the collector electrode of insulated gate bipolar transistor IGBT, diode Z 2Positive pole connection-15V.
(2) described IGBT gate pole circuit comprises resistance R 3, diode D 6, resistance R 17, triode N 3, diode Z 3, resistance R 9, diode D 2, resistance R 10, capacitor C 4, triode N 4, triode N 5, capacitor C 5, capacitor C 6, diode D 3, resistance R 12, resistance R 11, diode Z 4, diode Z 5, and resistance R 13, resistance R 3An end connect resistance R respectively 9An end and the S of module switch device ADG202 2, resistance R 3Another termination-15V, triode N 3Emitter, capacitor C 4An end, triode N 5Collector electrode and capacitor C 6-An end, triode N 3Base stage connect diode Z 3Positive pole, diode Z 3Negative pole connects photoelectrical coupler FAULT, triode N 3Collector electrode connect resistance R respectively 17And resistance R 10An end, resistance R 17The other end connect diode D 6Negative pole, diode D 6Positive pole connect triode N respectively 4Collector electrode, capacitor C 5An end and the D of module switch device ADG202 2, triode N 4The triode of the connection respectively N of base stage 5Base stage, resistance R 9The other end and diode D 2Positive pole, triode N 4Emitter connect triode N respectively 5Emitter, diode D 3Negative pole and resistance R 11An end, diode D 3Positive pole connect resistance R 12An end, resistance R 12The other end connect resistance R respectively 11The other end, diode Z 4Negative pole, resistance R 13An end and the gate pole of insulated gate bipolar transistor IGBT, the emitter of edge grid bipolar transistor IGBT connects resistance R respectively 13The other end, diode Z 5Negative pole and ground, diode Z 5Cathode connecting diode Z 4Positive pole, capacitor C 5The other end connect capacitor C 6-The other end.
The utility model megawatt-level wind current transformer IGBT drive circuit; Under high-power service conditions, guarantee the reliable conducting of IGBT, shutoff; Reduce the loss of IGBT, guarantee that under failure conditions such as overcurrent, overvoltage IGBT turn-offs reliably, thereby guarantee the safe and reliable operation of unit.
Description of drawings
Fig. 1 is that the IGBT of the utility model drives the overcurrent protection curve;
Fig. 2 is that the IGBT of the utility model drives the functional block block diagram;
Fig. 3 is the light-coupled isolation drive principle figure of the utility model;
Fig. 4 is the circuit theory diagrams of the utility model;
Fig. 5 is the chip pin figure of module switch device ADG202;
Embodiment
For example the utility model is described further below in conjunction with accompanying drawing.
Embodiment 1: combine Fig. 1-5; A kind of megawatt-level wind current transformer of the utility model IGBT drive circuit; It is made up of module switch device ADG202, insulated gate bipolar transistor IGBT, IGBT collector circuit and IGBT gate pole circuit; Module switch device ADG202 connects IGBT collector circuit and IGBT gate pole circuit respectively, and the IGBT collector circuit is connected insulated gate bipolar transistor IGBT with IGBT gate pole circuit.
The utility model also has following technical characterictic:
Described IGBT collector circuit comprises resistance R 4, triode N 1, resistance R 5, resistance R 6, triode N 2, resistance R 18, diode Z 1, resistance R 2, resistance R 19, comparator LM111, resistance R 1, potentiometer P 1, diode Z 2, diode D 7, resistance R 7, diode D 1, capacitor C 3, triode N 1Emitter connect resistance R 4An end and the pin D of module switch device ADG202 2, triode N 1Collector electrode connect resistance R respectively 4The other end, resistance R 6An end, resistance R 2An end, resistance R 1An end and+15V, resistance R 5The other end connect resistance R respectively 6The other end and triode N 2Collector electrode, triode N 2Grounded emitter, triode N 2Base stage connect resistance R 18An end, resistance R 18The other end connect diode Z 1Positive pole, diode Z 1Negative pole connect output, the resistance R of comparator LM111 respectively 2The other end, resistance R 19An end and the pin IN of module switch device ADG202 2, the in-phase input end of comparator LM111 connects resistance R respectively 19The other end, resistance R 1The other end and potentiometer P 1An end, potentiometer P 1Other end ground connection, the inverting input of comparator LM111 connects diode Z respectively 2Negative pole, diode D 7Positive pole, capacitor C 3An end and diode D 1Negative pole, capacitor C 3Other end ground connection, diode D 1Positive pole connect resistance R 7, resistance R 7The pin S of other end link block switching device ADG202 1, diode D 7Negative pole connect the collector electrode of insulated gate bipolar transistor IGBT, diode Z 2Positive pole connection-15V.
Described IGBT gate pole circuit comprises resistance R 3, diode D 6, resistance R 17, triode N 3, diode Z 3, resistance R 9, diode D 2, resistance R 10, capacitor C 4, triode N 4, triode N 5, capacitor C 5, capacitor C 6, diode D 3, resistance R 12, resistance R 11, diode Z 4, diode Z 5, and resistance R 13, it is characterized in that: resistance R 3An end connect resistance R respectively 9An end and the S of module switch device ADG202 2, resistance R 3Another termination-15V, triode N 3Emitter, capacitor C 4An end, triode N 5Collector electrode and capacitor C 6-An end, triode N 3Base stage connect diode Z 3Positive pole, diode Z 3Negative pole connects photoelectrical coupler FAULT, triode N 3Collector electrode connect resistance R respectively 17And resistance R 10An end, resistance R 17The other end connect diode D 6Negative pole, diode D 6Positive pole connect triode N respectively 4Collector electrode, capacitor C 5An end and the D of module switch device ADG202 2, triode N 4The triode of the connection respectively N of base stage 5Base stage, resistance R 9The other end and diode D 2Positive pole, triode N 4Emitter connect triode N respectively 5Emitter, diode D 3Negative pole and resistance R 11An end, diode D 3Positive pole connect resistance R 12An end, resistance R 12The other end connect resistance R respectively 11The other end, diode Z 4Negative pole, resistance R 13An end and the gate pole of insulated gate bipolar transistor IGBT, the emitter of edge grid bipolar transistor IGBT connects resistance R respectively 13The other end, diode Z 5Negative pole and ground, diode Z 5Cathode connecting diode Z 4Positive pole, capacitor C 5The other end connect capacitor C 6-The other end.
Embodiment 2: combine Fig. 1-5; The utility model is according to static characteristic, the switch transient characterisitics of IGBT and consider the interval of the trouble free service of its permission; The gate-drive protective circuit satisfies following basic demand during IGBT work: provide enough gate voltages to open IGBT, and during opening, keep this voltage; Opening the stage at first, providing enough gate drive current to reduce turn-on consumption and the speed of opening that guarantees IGBT; At blocking interval, the ability of ability that a reverse bias voltage improves the anti-transient state dv/ dt of IGBT and anti-EMI noise is provided and reduces turn-off power loss; Between IGBT power circuit and control circuit, light-coupled isolation is provided; When short trouble took place, drive circuit can be through rational gate voltage action carrying out IGBT protection, and the concurrent signal that is out of order is to control system.
Provided one type of IGBT drive protecting curve that overcurrent protection function is fairly perfect among Fig. 1.Wherein T1 is generally less than 10 μ s the lasting short period of over-current signal, drives output and recovers automatically; T2 is generally 10 μ s for the duration after falling grid voltage; T3 is the soft shutoff duration; T4 is a blocking time after the fault.The IGBT that satisfies above-mentioned requirements drives functional block diagram shown in Fig. 2, and the Optical Fiber Transmission mode is adopted in the pwm signal input, and whether wherein frame of broken lines inside is divided into optional content, can select as required to dispose, and also can realize through peripheral circuit.
In order better to realize problems such as voltage isolation, anti-electromagnetic interference, the utility model adopts the light-coupled isolation mode.This mode has been simplified design of drive circuit, has alleviated equipment volume and weight, has reduced cost, and certain advantage is arranged in application, but the operation principle of light-coupled isolation has determined it to belong to active isolation, isolates output and must add power supply and amplifying circuit.Adopt chip HCPL-316J among the design, its schematic diagram is seen Fig. 3.Wherein after inner light-coupled isolation was amplified, the Vout end was output in the P end among Fig. 4 to input signal, is used for the control to IGBT from the V+in input, and the FAULT pin is used to export the introducing of fault-signal FAULT.
Embodiment 3: combine Fig. 4-5, the operation principle of the utility model is following: the module switch device adopts ADG202 among Fig. 5, and wherein A, B, Z, C, P are connected respectively on the module switch device ADG202.P is the control signal that IGBT turns on and off, and as P when being high, A and B are connected by analog switch, control IGBT conducting; When P was low level, this analog switch was opened, and control IGBT turn-offs.The pin IN of ADG202 itself is the input of control signal, and D and S are respectively the two ends of analog switch.Fig. 5 is that the utility model drives and the protective circuit schematic diagram operation execution mode under following several kinds of situation: when the conducting of first kind of IGBT: P was high level, A and B connected.The E point voltage is the IGBT saturation voltage drop, and N2 turn-offs, the N1 conducting, and A, B point voltage are+15 V, the N4 conducting.The Y point voltage is about+15 V, makes the IGBT conducting through gate electrode resistance R11.When the shutoff of second kind of IGBT: P was low level, A and B broke off.The A point voltage is+15V that the B point voltage is-15V.Z on the analog switch breaks off with+15V voltage, not conducting of N3, and C3 and C4 are ended by diode reverse, can not discharge.The N5 conducting, be added on the gate pole-15V voltage makes IGBT turn-off.Protection during the third over current fault: when IGBT moved, P was a high level.During the IGBT overcurrent, saturation voltage drop increases, and D7 oppositely ends, because Z is connected with+15V, then C3 is recharged, and voltage increases gradually.When C3 voltage is higher than the comparative voltage of comparator setting, comparator output high level, the N2 conducting, N1 ends, the R4 access circuit.The access of R4 makes A, B voltage become+10V.When the IGBT gate voltage be reduced to+10V after, overcurrent allows general 10 μ s of time.This time also can be regulated according to user's needs, after R7 and C3 confirm, can set this value through the value of selecting voltage stabilizing didoe Z3.If disappear at 10 μ s internal faults, the IGBT saturation voltage drop reduces, then D7 conducting, and the E point voltage reduces, the comparator output low level, circuit recovers operate as normal.If do not disappear at 10 μ s internal faults, then C3 continues charging, when the value greater than voltage stabilizing didoe Z3, makes N3 conducting, then optocoupler output fault-signal.Simultaneously C4 begins the discharge through R10, makes X, and the Y point voltage reduces gradually, and IGBT is turn-offed at a slow speed.The 4th kind of overvoltage protection and dv/dt protection: the measure of taking for overvoltage protection is: (1) adds capacitance-resistance and buffering circuit; (2) add gate pole emitter resistance (R13 among Fig. 4) between gate pole and the emitter; (3) voltage stabilizing didoe of parallelly connected differential concatenation (Z4 among Fig. 4 and Z5) between gate pole and the emitter.
Purpose for the dv/dt protection mainly is to prevent latching effect and prevent that the collector current successive value from surpassing critical value.Take measures to comprise: add enough negative gate voltages (10 V) during (1) off-state; When (2) turn-offing, guarantee that gate electrode resistance is less, among Fig. 4 when turn-offing diode D3 make R12 and R11 parallelly connected, reduce gate electrode resistance; (3) gate pole emitter circuit electric induction is as far as possible little.

Claims (3)

1. megawatt-level wind current transformer IGBT drive circuit; It is made up of module switch device ADG202, insulated gate bipolar transistor IGBT, IGBT collector circuit and IGBT gate pole circuit; It is characterized in that: module switch device ADG202 connects IGBT collector circuit and IGBT gate pole circuit respectively, and the IGBT collector circuit is connected insulated gate bipolar transistor IGBT with IGBT gate pole circuit.
2. a kind of megawatt-level wind current transformer IGBT drive circuit according to claim 1, it is characterized in that: described IGBT collector circuit comprises resistance R 4, triode N 1, resistance R 5, resistance R 6, triode N 2, resistance R 18, diode Z 1, resistance R 2, resistance R 19, comparator LM111, resistance R 1, potentiometer P 1, diode Z 2, diode D 7, resistance R 7, diode D 1, capacitor C 3, triode N 1Emitter connect resistance R 4An end and the pin D of module switch device ADG202 2, triode N 1Collector electrode connect resistance R respectively 4The other end, resistance R 6An end, resistance R 2An end, resistance R 1An end and+15V, resistance R 5The other end connect resistance R respectively 6The other end and triode N 2Collector electrode, triode N 2Grounded emitter, triode N 2Base stage connect resistance R 18An end, resistance R 18The other end connect diode Z 1Positive pole, diode Z 1Negative pole connect output, the resistance R of comparator LM111 respectively 2The other end, resistance R 19An end and the pin IN of module switch device ADG202 2, the in-phase input end of comparator LM111 connects resistance R respectively 19The other end, resistance R 1The other end and potentiometer P 1An end, potentiometer P 1Other end ground connection, the inverting input of comparator LM111 connects diode Z respectively 2Negative pole, diode D 7Positive pole, capacitor C 3An end and diode D 1Negative pole, capacitor C 3Other end ground connection, diode D 1Positive pole connect resistance R 7, resistance R 7The pin S of other end link block switching device ADG202 1, diode D 7Negative pole connect the collector electrode of insulated gate bipolar transistor IGBT, diode Z 2Positive pole connection-15V.
3. a kind of megawatt-level wind current transformer IGBT drive circuit according to claim 1, it is characterized in that: described IGBT gate pole circuit comprises resistance R 3, diode D 6, resistance R 17, triode N 3, diode Z 3, resistance R 9, diode D 2, resistance R 10, capacitor C 4, triode N 4, triode N 5, capacitor C 5, capacitor C 6, diode D 3, resistance R 12, resistance R 11, diode Z 4, diode Z 5, and resistance R 13, resistance R 3An end connect resistance R respectively 9An end and the S of module switch device ADG202 2, resistance R 3Another termination-15V, triode N 3Emitter, capacitor C 4An end, triode N 5Collector electrode and capacitor C 6-An end, triode N 3Base stage connect diode Z 3Positive pole, diode Z 3Negative pole connects photoelectrical coupler FAULT, triode N 3Collector electrode connect resistance R respectively 17And resistance R 10An end, resistance R 17The other end connect diode D 6Negative pole, diode D 6Positive pole connect triode N respectively 4Collector electrode, capacitor C 5An end and the D of module switch device ADG202 2, triode N 4The triode of the connection respectively N of base stage 5Base stage, resistance R 9The other end and diode D 2Positive pole, triode N 4Emitter connect triode N respectively 5Emitter, diode D 3Negative pole and resistance R 11An end, diode D 3Positive pole connect resistance R 12An end, resistance R 12The other end connect resistance R respectively 11The other end, diode Z 4Negative pole, resistance R 13An end and the gate pole of insulated gate bipolar transistor IGBT, the emitter of edge grid bipolar transistor IGBT connects resistance R respectively 13The other end, diode Z 5Negative pole and ground, diode Z 5Cathode connecting diode Z 4Positive pole, capacitor C 5The other end connect capacitor C 6-The other end.
CN 201120502137 2011-12-06 2011-12-06 IGBT driving circuit of megawatt wind power converter Expired - Fee Related CN202455252U (en)

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CN 201120502137 CN202455252U (en) 2011-12-06 2011-12-06 IGBT driving circuit of megawatt wind power converter

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CN 201120502137 CN202455252U (en) 2011-12-06 2011-12-06 IGBT driving circuit of megawatt wind power converter

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103033732A (en) * 2012-11-09 2013-04-10 浙江大学 Insulated gate bipolar transistor (IGBT) fault detection circuit
CN105262468A (en) * 2015-11-03 2016-01-20 佛山市南海区联合广东新光源产业创新中心 IGBT protection and drive circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103033732A (en) * 2012-11-09 2013-04-10 浙江大学 Insulated gate bipolar transistor (IGBT) fault detection circuit
CN103033732B (en) * 2012-11-09 2015-05-20 浙江大学 Insulated gate bipolar transistor (IGBT) fault detection circuit
CN105262468A (en) * 2015-11-03 2016-01-20 佛山市南海区联合广东新光源产业创新中心 IGBT protection and drive circuit

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120926

Termination date: 20191206

CF01 Termination of patent right due to non-payment of annual fee