CN205453117U - IGBT overvoltage crowbar - Google Patents
IGBT overvoltage crowbar Download PDFInfo
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- CN205453117U CN205453117U CN201521107749.2U CN201521107749U CN205453117U CN 205453117 U CN205453117 U CN 205453117U CN 201521107749 U CN201521107749 U CN 201521107749U CN 205453117 U CN205453117 U CN 205453117U
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Abstract
The utility model provides a IGBT overvoltage crowbar, including IGBT, IGBT drive module and collecting electrode overvoltage protection module. Collecting electrode overvoltage protection module is used for monitoring the voltage of IGBT's collecting electrode, switch on or the turn -off time is less than when predetermineeing the time as IGBT, the voltage reference value of collecting electrode overvoltage protection module is established to first threshold value, otherwise the voltage reference value of collecting electrode overvoltage protection module is adjusted into the second threshold, the second threshold is greater than first threshold value, collecting electrode overvoltage protection module is still when the voltage of IGBT's collecting electrode is greater than current voltage reference value, the transmission curb makes the rising of IGBT's base current potential rising with suppression IGBT's collector voltage. The utility model provides a IGBT overvoltage protection method. Above -mentioned IGBT overvoltage crowbar and method have avoided IGBT voltage build -up during turn -offing to make IGBT turn -off the overvoltage protection malfunction, have improved the reliability of circuit.
Description
Technical field
This utility model relates to overvoltage crowbar, particularly relates to a kind of overvoltage crowbar comprising IGBT.
Background technology
The advantage that igbt (InsulatedGateBipolarTransistor, IGBT) integrates power transistor and power field effect pipe; have the advantages that to be prone to drive, peak point current capacity is big, automatic shutoff, switching frequency are high; being widely used in the middle of small size, high efficiency variable-frequency power sources, electric machine speed regulation, UPS and inverter type welder, the driving of IGBT and protection are the key technologies in its application.
Conventional IGBT overvoltage crowbar is made up of, as shown in Figure 1 TVS (Transient Suppression Diode), common fast recovery diode and resistance Z1 and Z2.When the collector potential of IGBT is too high, TVS is breakdown, has electric current to flow to gate pole, and gate potentials is able to lifting, so that cut-off current change is slowly, reduces due to voltage spikes.During IGBT turns off, owing to voltage ripple of power network makes converter busbar voltage rise, when reaching the breakdown voltage of TVS, TVS can be breakdown, if the overvoltage persistent period is longer, then TVS can damage because of thermal breakdown, causes drive circuit to lose efficacy.It is therefore desirable to propose the overvoltage crowbar of a kind of follow-on IGBT to overcome drawbacks described above.
Utility model content
The purpose of this utility model is, it is provided that the overvoltage crowbar of IGBT, and it is avoided that IGBT turns off overvoltage protection misoperation, improves the reliability of IGBT drive circuit.
To achieve these goals, this utility model provides a kind of IGBT overvoltage crowbar, in converter, including IGBT and the IGBT drive module that is electrically connected to described IGBT.Described IGBT overvoltage crowbar also includes that collector overvoltage protects module, it is electrically connected to described IGBT and described IGBT drive module, for monitoring the voltage of the colelctor electrode of described IGBT, when the described IGBT on or off time is less than Preset Time, the voltage reference value of described collector overvoltage protection module is first threshold, when the described IGBT turn-off time is not less than Preset Time, the voltage reference value of described collector overvoltage protection module is Second Threshold, described Second Threshold is more than described first threshold, described collector overvoltage protection module is additionally operable to when the voltage of the colelctor electrode of described IGBT is more than current voltage reference value, transmission suppression electric current makes the base potential of described IGBT rise the rising of the collector voltage to suppress described IGBT.
Preferably; described IGBT drive module includes the first field effect transistor and the second field effect transistor; described collector overvoltage protection module includes controller; described controller is when the voltage of the colelctor electrode at described IGBT is more than current voltage reference value; control described second field effect transistor cut-off, to avoid described suppression electric current to flow through described second field effect transistor.
Preferably, described IGBT drive module also includes the first resistance and the second resistance, the drain electrode of described first field effect transistor is electrically connected to positive reference voltage, the source electrode of described first field effect transistor is electrically connected to one end of described first resistance, the other end of described first resistance is electrically connected to the base stage of described IGBT, the grid of described first field effect transistor is electrically connected to described controller, the drain electrode of described second field effect transistor is electrically connected to negative reference voltage, the source electrode of described second field effect transistor is electrically connected to one end of described second resistance, the other end of described second resistance is electrically connected to the base stage of described IGBT, the grid of described second field effect transistor is electrically connected to described controller.
Preferably, described collector overvoltage protection module includes controller, first TVS pipe, second TVS pipe and the 3rd field effect transistor, the positive electrical of described first TVS pipe is connected to the base stage of described IGBT, the negative electricity of described first TVS pipe is connected to the positive pole of described second TVS pipe, the negative electricity of described second TVS pipe is connected to the colelctor electrode of described IGBT, the grid of described 3rd field effect transistor is electrically connected to described controller, the drain electrode of described 3rd field effect transistor is electrically connected to the colelctor electrode of described IGBT, the source electrode of described 3rd field effect transistor is electrically connected to the common port of described first TVS pipe and described second TVS pipe.
Preferably; described collector overvoltage protection module also includes the 3rd resistance and diode; one end of described 3rd resistance is electrically connected to described controller; the other end of described 3rd resistance is electrically connected to the positive pole of described first TVS pipe; the positive electrical of described diode is connected to the common port of described 3rd resistance and described first TVS pipe, and the negative electricity of described diode is connected to the base stage of described IGBT.
The beneficial effects of the utility model: this utility model provides a kind of IGBT overvoltage crowbar; avoiding IGBT voltage during turning off to rise makes IGBT turn off overvoltage protection misoperation; improve the reliability of circuit; improve converter simultaneously and adapt to the higher limit of input voltage fluctuation; and by the control to afterbody IGBT drive circuit so that the current potential of IGBT colelctor electrode has obtained quick suppression.
In order to be able to be further understood that feature of the present utility model and technology contents, refer to below in connection with detailed description of the present utility model and accompanying drawing, but accompanying drawing only provides reference and explanation use, be not used for this utility model is any limitation as.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of IGBT overvoltage protection in prior art one embodiment；
Fig. 2 is the module map of IGBT overvoltage crowbar in this utility model one embodiment；
Fig. 3 is the circuit diagram of IGBT overvoltage crowbar in this utility model one embodiment；
The flow chart of IGBT over-voltage protection method in Fig. 4 this utility model one embodiment.
Detailed description of the invention
By further illustrating the technological means and effect thereof that this utility model taked, it is described in detail below in conjunction with preferred embodiment of the present utility model and accompanying drawing thereof.
Fig. 2 is the module map of IGBT overvoltage crowbar 100 in this utility model one embodiment.IGBT overvoltage crowbar 100 can use in converter, when the DC bus-bar voltage of converter rises to marginal value, can effectively suppress IGBT to turn off the overvoltage produced by IGBT overvoltage crowbar 100, improve the reliability of converter.In the present embodiment, IGBT overvoltage crowbar 100 include IGBT (igbt, InsulatedGateBipolarTransistor), the IGBT drive module 10 that is electrically connected to IGBT and collector overvoltage protection module 20.IGBT drive module 10 is used for driving IGBT.Collector overvoltage protection module 20 is electrically connected to IGBT and IGBT drive module 10, and collector overvoltage protection module 20 is for monitoring the voltage of the colelctor electrode of IGBT.Collector overvoltage protection module 20 is provided with voltage reference value; voltage reference value is adjustable; in the present embodiment, voltage reference value preferably includes two kinds of voltage reference values varied in size, and collector overvoltage protection module 20 is that the running status according to IGBT is adjusted voltage reference value.Such as; when IGBT be conducting state or IGBT be off state and turn-off time less than Preset Time time; Preset Time can be defined as 20us; the voltage reference value of collector overvoltage protection module 20 is arranged to first threshold; when IGBT is off state and the turn-off time is not less than Preset Time 20us; the voltage reference value of collector overvoltage protection module 20 is arranged to Second Threshold, and wherein, Second Threshold is more than first threshold.Collector overvoltage protection module 20 is additionally operable to when the voltage of the colelctor electrode of IGBT is more than current voltage reference value, and transmission suppression electric current makes the base potential of IGBT rise the rising of the collector voltage with suppression IGBT.During IGBT turns off; by arranging higher threshold value; realize allowing the DC bus-bar voltage of converter to rise to much higher value; avoid busbar voltage during IGBT turns off to rise and produce overvoltage protection misoperation problem; voltage can also be resisted simultaneously and raise the damage that IGBT Drive Protecting Circuit is caused, improve the reliability of converter.
Please refer to Fig. 3; as to further improvement of the utility model; IGBT drive module 10 includes the first field effect transistor Q1 and the second field effect transistor Q2; collector overvoltage protection module 20 includes controller 202; controller 202 is when the voltage of the colelctor electrode at IGBT is more than current voltage reference value; control the second field effect transistor Q2 cut-off; to avoid the suppression electric current of collector overvoltage protection module 20 transmission to flow through the second field effect transistor Q2, and then improve IGBT overvoltage crowbar 100 and suppress the effect of overvoltage.In the present embodiment, the first field effect transistor Q1 can be NMOS tube, and the second field effect transistor Q2 can be PMOS.
In this utility model one embodiment, IGBT drive module 10 also includes the first resistance R1 and the second resistance R2, the drain electrode of the first field effect transistor Q1 is electrically connected to positive reference voltage V1, the source electrode of the first field effect transistor Q1 is electrically connected to one end of the first resistance R1, the other end of the first resistance R1 is electrically connected to the base stage of IGBT, the grid of the first field effect transistor Q1 is electrically connected to controller 202, the drain electrode of the second field effect transistor Q2 is electrically connected to negative reference voltage V 2, the source electrode of the second field effect transistor Q2 is electrically connected to one end of the second resistance R2, the other end of the second resistance R2 is electrically connected to the base stage of IGBT, the grid of the second field effect transistor Q2 is electrically connected to controller 202.When IGBT turns on, controller 202 controls that the first field effect transistor Q1 is in the conduction state and the second field effect transistor Q2 is off state；When IGBT turns off, controller 202 controls the first field effect transistor Q1 and is off state and the second field effect transistor Q2 is in the conduction state；When IGBT turns off and is more than current voltage reference value more than Preset Time 20us and collector voltage, controller 202 controls the second field effect transistor Q2 cut-off again, thus avoids the suppression electric current of the second field effect transistor Q2 bypass collector overvoltage protection module 20 transmission.In the present embodiment, the magnitude of voltage of positive reference voltage V1 can be 15V, and the magnitude of voltage of negative reference voltage V 2 can be-15V.
In this utility model one embodiment, collector overvoltage protection module also includes the first TVS pipe TVS1, the second TVS pipe TVS2 and the 3rd field effect transistor Q3.The positive electrical of the first TVS pipe TVS1 is connected to the base stage of IGBT, the negative electricity of the first TVS pipe TVS1 is connected to the positive pole of the second TVS pipe TVS2, the negative electricity of the second TVS pipe TVS2 is connected to the colelctor electrode of IGBT, the grid of the 3rd field effect transistor Q3 is electrically connected to controller 202, the drain electrode of the 3rd field effect transistor Q3 is electrically connected to the colelctor electrode of IGBT, and the source electrode of the 3rd field effect transistor Q3 is electrically connected to the first TVS pipe TVS1 and the common port of the second TVS pipe TVS2.Controller 202 always chooses whether to bypass the second TVS pipe TVS2 by controlling the 3rd field effect transistor Q3 conducting with disconnecting, and then realizes adjusting the voltage reference value of collector overvoltage protection module 20.When controller 202 controls the 3rd field effect transistor Q3 conducting, the voltage reference value of collector overvoltage protection module 20 is equal to the breakdown voltage of the first TVS pipe TVS1；When controller 202 controls the 3rd field effect transistor Q3 disconnection, the voltage reference value of collector overvoltage protection module 20 is equal to the first TVS pipe TVS1 and the breakdown voltage sum of the second TVS pipe TVS2.
In this utility model one embodiment, collector overvoltage protection module also includes the 3rd resistance R3 and diode D1.One end of 3rd resistance R3 is electrically connected to controller 202, the other end of the 3rd resistance R3 is electrically connected to the positive pole of the first TVS pipe TVS1, the positive electrical of diode D1 is connected to the 3rd resistance R3 and the common port of the first TVS pipe TVS1, and the negative electricity of diode D1 is connected to the base stage of IGBT.
Fig. 4 is the flow chart of IGBT over-voltage protection method in this utility model one embodiment.In the present embodiment, IGBT over-voltage protection method comprises the following steps: S100, and collector overvoltage protection module 20 monitors the voltage of the colelctor electrode of IGBT；S102; controller 202 obtains the status information of IGBT; and when the IGBT on or off time is less than Preset Time; the voltage reference value that collector overvoltage is protected module 20 is set to first threshold; and when the IGBT turn-off time is not less than Preset Time; the voltage reference value that collector overvoltage is protected module 20 is set to Second Threshold, and described Second Threshold is more than described first threshold；S104; collector overvoltage protection module 20 judges whether the voltage of the colelctor electrode of IGBT is more than current voltage reference value, and transmission suppression electric current makes the base potential of IGBT rise the rising of the collector voltage to suppress IGBT when the voltage of the colelctor electrode of IGBT is more than current voltage reference value.
In sum; the IGBT overvoltage crowbar of this utility model offer and method; avoiding IGBT voltage during turning off to rise makes IGBT turn off overvoltage protection misoperation; improve the reliability of circuit; improve converter simultaneously and adapt to the higher limit of input voltage fluctuation; and by the control to afterbody IGBT drive circuit so that the current potential of IGBT colelctor electrode has obtained quick suppression.
The above; for the person of ordinary skill of the art; can conceive according to the technical solution of the utility model and technology and make other various corresponding changes and deformation, and all these change and deformation all should belong to this utility model scope of the claims.
Claims (5)
- null1. an IGBT overvoltage crowbar，In converter，Including IGBT and the IGBT drive module that is electrically connected to described IGBT，It is characterized in that，Described IGBT overvoltage crowbar also includes that collector overvoltage protects module，It is electrically connected to described IGBT and described IGBT drive module，For monitoring the voltage of the colelctor electrode of described IGBT，When the described IGBT on or off time is less than Preset Time，The voltage reference value of described collector overvoltage protection module is first threshold，When the described IGBT turn-off time is not less than Preset Time，The voltage reference value of described collector overvoltage protection module is Second Threshold，Described Second Threshold is more than described first threshold，Described collector overvoltage protection module is additionally operable to when the voltage of the colelctor electrode of described IGBT is more than current voltage reference value，Transmission suppression electric current makes the base potential of described IGBT rise the rising of the collector voltage to suppress described IGBT.
- 2. IGBT overvoltage crowbar as claimed in claim 1; it is characterized in that; described IGBT drive module includes the first field effect transistor and the second field effect transistor; described collector overvoltage protection module includes controller; described controller is when the voltage of the colelctor electrode at described IGBT is more than current voltage reference value; control described second field effect transistor cut-off, to avoid described suppression electric current to flow through described second field effect transistor.
- 3. IGBT overvoltage crowbar as claimed in claim 2, it is characterized in that, described IGBT drive module also includes the first resistance and the second resistance, the drain electrode of described first field effect transistor is electrically connected to positive reference voltage, the source electrode of described first field effect transistor is electrically connected to one end of described first resistance, the other end of described first resistance is electrically connected to the base stage of described IGBT, the grid of described first field effect transistor is electrically connected to described controller, the drain electrode of described second field effect transistor is electrically connected to negative reference voltage, the source electrode of described second field effect transistor is electrically connected to one end of described second resistance, the other end of described second resistance is electrically connected to the base stage of described IGBT, the grid of described second field effect transistor is electrically connected to described controller.
- 4. IGBT overvoltage crowbar as claimed in claim 1, it is characterized in that, described collector overvoltage protection module includes controller, first TVS pipe, second TVS pipe and the 3rd field effect transistor, the positive electrical of described first TVS pipe is connected to the base stage of described IGBT, the negative electricity of described first TVS pipe is connected to the positive pole of described second TVS pipe, the negative electricity of described second TVS pipe is connected to the colelctor electrode of described IGBT, the grid of described 3rd field effect transistor is electrically connected to described controller, the drain electrode of described 3rd field effect transistor is electrically connected to the colelctor electrode of described IGBT, the source electrode of described 3rd field effect transistor is electrically connected to the common port of described first TVS pipe and described second TVS pipe.
- 5. IGBT overvoltage crowbar as claimed in claim 4; it is characterized in that; described collector overvoltage protection module also includes the 3rd resistance and diode; one end of described 3rd resistance is electrically connected to described controller; the other end of described 3rd resistance is electrically connected to the positive pole of described first TVS pipe; the positive electrical of described diode is connected to the common port of described 3rd resistance and described first TVS pipe, and the negative electricity of described diode is connected to the base stage of described IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521107749.2U CN205453117U (en) | 2015-12-28 | 2015-12-28 | IGBT overvoltage crowbar |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521107749.2U CN205453117U (en) | 2015-12-28 | 2015-12-28 | IGBT overvoltage crowbar |
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| CN205453117U true CN205453117U (en) | 2016-08-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406701A (en) * | 2015-12-28 | 2016-03-16 | 深圳市库马克新技术股份有限公司 | IGBT overvoltage protection circuit and method |
| CN108235481A (en) * | 2016-12-22 | 2018-06-29 | 佛山市顺德区美的电热电器制造有限公司 | A kind of guard method of IGBT collector voltages, device and electromagnetic oven based on power input voltage |
| CN113162593A (en) * | 2021-04-27 | 2021-07-23 | 杭州士兰微电子股份有限公司 | Driving system of transistor |
-
2015
- 2015-12-28 CN CN201521107749.2U patent/CN205453117U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406701A (en) * | 2015-12-28 | 2016-03-16 | 深圳市库马克新技术股份有限公司 | IGBT overvoltage protection circuit and method |
| CN108235481A (en) * | 2016-12-22 | 2018-06-29 | 佛山市顺德区美的电热电器制造有限公司 | A kind of guard method of IGBT collector voltages, device and electromagnetic oven based on power input voltage |
| CN108235481B (en) * | 2016-12-22 | 2021-03-30 | 佛山市顺德区美的电热电器制造有限公司 | IGBT collector voltage protection method and device based on power supply input voltage and induction cooker |
| CN113162593A (en) * | 2021-04-27 | 2021-07-23 | 杭州士兰微电子股份有限公司 | Driving system of transistor |
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| TR01 | Transfer of patent right |
Effective date of registration: 20230118 Address after: 518000 3F, kumak building, Dongzhou community, Guangming Street, Guangming District, Shenzhen, Guangdong Patentee after: Shenzhen kumak Technology Co.,Ltd. Address before: 518000 No.706, Tairan Cangsong Industrial Building, Chegongmiao Industrial Zone, Shennan Road, Futian District, Shenzhen, Guangdong Province Patentee before: Shenzhen Cumark New Technology Co.,Ltd. |