CN203645319U - IGBT series voltage-sharing circuit - Google Patents
IGBT series voltage-sharing circuit Download PDFInfo
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- CN203645319U CN203645319U CN201320870874.3U CN201320870874U CN203645319U CN 203645319 U CN203645319 U CN 203645319U CN 201320870874 U CN201320870874 U CN 201320870874U CN 203645319 U CN203645319 U CN 203645319U
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Abstract
The utility model discloses an IGBT series voltage-sharing circuit, which is composed of two IGBT units in serial connection. Each IGBT unit comprises a driving circuit, an IGBT, a high-voltage diode, a resistor, a capacitor and a transient suppression diode, wherein the C end, the G end and the E end of the driving circuit are connected with the collector electrode, the gate electrode and the emitter electrode of the IGBT for driving on and off of the IGBT; the transient suppression diode is firstly in serial connection with the resistor, then in parallel connection with the capacitor and then in connection with the cathode of the high-voltage diode to form a buffer circuit; the anode of the transient suppression diode of the buffer circuit is connected with the emitter electrode of the IGBT; the anode of the high-voltage diode is connected with the collector electrode of the IGBT; and the driving signals act on the two IGBT driving circuits. When consistency of on and off time of the two IGBTs are ensured, static and dynamic voltage sharing of the two IGBTs are also met, and safe and high-efficiency operation of the serial IGBTs can be realized.
Description
Technical field
The utility model belongs to field of power electronics, especially relates to a kind of IGBT series average-voltage circuit.
Background technology
IGBT is a kind of novel semi-conductor power device occurring early 1980s, and it not only has voltage control input characteristics, low-resistance on-state output characteristic, also have high input impedance voltage drive, without second breakdown and the advantage such as safety operation area is wide.Meanwhile, due to its architectural characteristic, determined that it has the ability of speed-sensitive switch, can meet the requirement of PWM Semiconductor Converting Technology.IGBT has a wide range of applications in many fields of modern industry.But current single power device withstand voltage also can not meet more voltage levels requirement far away, as high voltage converter, high pressure static var compensator etc.In high-voltage and high-power power electronic equipment, require power device to there is higher withstand voltage, with multiple device for power switching directly connect use be the simple method of one addressing this problem.
The delay switching characteristic difference inconsistent and pipe itself of the driving signal of series IGBT is the main cause that causes that terminal voltage is unbalance.Difference can cause in opening process and on the device of holding slowly, produce due to voltage spikes and higher quiescent voltage time of delay, caused each tandem tube voltage unbalanced.Cause that the unbalance Another reason of overvoltage is that each series connection device wire distributed inductance and absorbing circuit characteristic are inconsistent.Its lead-in inductance difference of different I GBT, can cause different switching characteristics and due to voltage spikes.The voltage climbing speed dV/dt of shutdown moment depends primarily on Absorption Capacitance, and the error of capacitance is larger, and change with working temperature and Applicative time, therefore the dV/dt of the IGBT of each series connection also can be different, and the IGBT two ends that Absorption Capacitance is little can produce higher overvoltage.
At present, there are some patents about IGBT series average-voltage technology both at home and abroad, the self adaptation IGBT series average-voltage circuit with overcurrent protection function as described in CN10220800A; The IGBT series circuit based on the control of ARM microprocessor as described in CN101728952A; Above-mentioned equalizer circuit is all to have complex structure, the drawback that device is loaded down with trivial details.
Utility model content
Problem to be solved in the utility model is to provide a kind of IGBT series average-voltage circuit of simple in structure, security of operation, is particularly useful for needing the power electronic equipment of IGBT series connection.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of IGBT series average-voltage circuit, formed by 2 IGBT units in series, each IGBT unit comprises drive circuit, IGBT and buffer circuit, C, G, the E end of described drive circuit are connected with collector electrode, grid, the emitter of IGBT respectively, for driving conducting and the shutoff of IGBT, one end of described buffer circuit is connected with the emitter of IGBT, the other end is connected with the collector electrode of IGBT, drives signal to be connected with the drive circuit in 2 IGBT unit respectively.
Further, described buffer circuit is by Transient Suppression Diode rear elder generation in series with a resistor and Capacitance parallel connection, then be connected to form with the negative electrode of high-voltage diode, the anode of the Transient Suppression Diode of buffer circuit is connected with the emitter of IGBT, and the anode of high-voltage diode is connected with the collector electrode of IGBT.
Further, the peak-inverse voltage of described high-voltage diode is greater than the maximum clamp voltage of Transient Suppression Diode; The maximum breakdown voltage of Transient Suppression Diode is less than the Vce rated value of IGBT.
Advantage and the good effect that the utlity model has are: owing to adopting technique scheme, guaranteeing that 2 IGBT are in ON time and conforming while on the turn-off time, also meet all pressures of the Static and dynamic of 2 IGBT, moved safely and efficiently thereby realized the IGBT connecting; There is the advantages such as circuit design is simple, easy to use, safe and reliable to operation.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
As shown in Figure 1, a kind of IGBT series average-voltage of the utility model circuit, formed by 2 IGBT units in series, each IGBT unit comprises drive circuit, IGBT, high-voltage diode, resistance, electric capacity and Transient Suppression Diode, C, G, the E end of drive circuit are connected with collector electrode, grid, the emitter of IGBT, for driving conducting and the shutoff of IGBT; Transient Suppression Diode rear elder generation in series with a resistor and Capacitance parallel connection, then be connected to form buffer circuit with the negative electrode of high-voltage diode, the anode of the Transient Suppression Diode of buffer circuit is connected with the emitter of IGBT, the anode of high-voltage diode is connected with the collector electrode of IGBT, and the peak-inverse voltage of described high-voltage diode is greater than the maximum clamp voltage of Transient Suppression Diode; The maximum breakdown voltage of Transient Suppression Diode is less than the Vce rated value of IGBT, drives signal to act on respectively 2 IGBT drive circuits.
The course of work of this example: drive circuit receives and drives signal, generates and is applicable to the driving pulse of IGBT driving voltage, by the turn-on and turn-off of the cable actuated IGBT that is connected with IGBT; Transient Suppression Diode is connected between the emitter and resistance of IGBT, for the Vce of IGBT is carried out to voltage clamping, prevents the overvoltage of moment, and the maximum breakdown voltage of Transient Suppression Diode should be slightly less than the Vce rated value of IGBT; Resistance is connected with Transient Suppression Diode, Transient Suppression Diode is played to the effect of current limliting, and after Transient Suppression Diode is in series with a resistor, with Capacitance parallel connection, electric capacity is mainly used in the buffering filtering of voltage; The effect of high-voltage diode is the impact while preventing the clamp voltage of Transient Suppression Diode to IGBT conducting, and the peak-inverse voltage of high-voltage diode should be greater than the maximum clamp voltage of Transient Suppression Diode.Because the clamp voltage of the Transient Suppression Diode TVS1 in 2 IGBT unit and TVS2 is identical, simultaneously resistance R 1 is identical with the voltage on R2, and the Vce while therefore shutoff when 2 IGBT is basic identical.One drives signal to act on 2 drive circuits simultaneously, has guaranteed like this approximate consistent of IGBT ON time and turn-off time, differs and is 50ns left and right to the maximum.And Transient Suppression Diode can absorb high-power surge, be enough to absorb the moment overvoltage causing due to the error of IGBT ON time and turn-off time.
The IGBT unit of above-mentioned 2 series connection is guaranteeing that 2 IGBT, in ON time and the conforming while on the turn-off time, have also met all pressures of the Static and dynamic of the IGBT of 2 series connection, moves safely and efficiently thereby realized the IGBT connecting.
Above an embodiment of the present utility model is had been described in detail, but described content is only preferred embodiment of the present utility model, can not be considered to for limiting practical range of the present utility model.All equalization variation and improvement etc. of doing according to the utility model application range, within all should still belonging to patent covering scope of the present utility model.
Claims (3)
1. an IGBT series average-voltage circuit, it is characterized in that: formed by 2 IGBT units in series, each IGBT unit comprises drive circuit, IGBT and buffer circuit, C, G, the E end of described drive circuit are connected with collector electrode, grid, the emitter of IGBT respectively, for driving conducting and the shutoff of IGBT, one end of described buffer circuit is connected with the emitter of IGBT, and the other end is connected with the collector electrode of IGBT, drives signal to be connected with the drive circuit in 2 IGBT unit respectively.
2. a kind of IGBT series average-voltage circuit according to claim 1, it is characterized in that: described buffer circuit is by Transient Suppression Diode rear elder generation in series with a resistor and Capacitance parallel connection, then be connected to form with the negative electrode of high-voltage diode, the anode of the Transient Suppression Diode of buffer circuit is connected with the emitter of IGBT, and the anode of high-voltage diode is connected with the collector electrode of IGBT.
3. a kind of IGBT series average-voltage circuit according to claim 2, is characterized in that: the peak-inverse voltage of described high-voltage diode is greater than the maximum clamp voltage of Transient Suppression Diode; The maximum breakdown voltage of Transient Suppression Diode is less than the Vce rated value of IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320870874.3U CN203645319U (en) | 2013-12-19 | 2013-12-19 | IGBT series voltage-sharing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320870874.3U CN203645319U (en) | 2013-12-19 | 2013-12-19 | IGBT series voltage-sharing circuit |
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| Publication Number | Publication Date |
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| CN203645319U true CN203645319U (en) | 2014-06-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320870874.3U Expired - Fee Related CN203645319U (en) | 2013-12-19 | 2013-12-19 | IGBT series voltage-sharing circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103683260A (en) * | 2013-12-19 | 2014-03-26 | 天津正本自控系统有限公司 | IGBT (Insulated Gate Bipolar Transistor) series connection voltage equalizing circuit |
| CN104242614A (en) * | 2014-09-24 | 2014-12-24 | 中冶赛迪电气技术有限公司 | IGBT series voltage-sharing device based on feedback control |
| CN105305816A (en) * | 2015-11-09 | 2016-02-03 | 飞毛腿(福建)电子有限公司 | Method for realizing circuit control by adopting series connection of field-effect tubes |
-
2013
- 2013-12-19 CN CN201320870874.3U patent/CN203645319U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103683260A (en) * | 2013-12-19 | 2014-03-26 | 天津正本自控系统有限公司 | IGBT (Insulated Gate Bipolar Transistor) series connection voltage equalizing circuit |
| CN104242614A (en) * | 2014-09-24 | 2014-12-24 | 中冶赛迪电气技术有限公司 | IGBT series voltage-sharing device based on feedback control |
| CN105305816A (en) * | 2015-11-09 | 2016-02-03 | 飞毛腿(福建)电子有限公司 | Method for realizing circuit control by adopting series connection of field-effect tubes |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140611 Termination date: 20151219 |
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| EXPY | Termination of patent right or utility model |