CN202663372U - Insulated gate bipolar transistor driving protector - Google Patents
Insulated gate bipolar transistor driving protector Download PDFInfo
- Publication number
- CN202663372U CN202663372U CN 201220300841 CN201220300841U CN202663372U CN 202663372 U CN202663372 U CN 202663372U CN 201220300841 CN201220300841 CN 201220300841 CN 201220300841 U CN201220300841 U CN 201220300841U CN 202663372 U CN202663372 U CN 202663372U
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- bipolar transistor
- insulated gate
- gate bipolar
- buffer
- igbt
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Abstract
The utility model discloses an insulated gate bipolar transistor driving protector which comprises a common emitter amplifying circuit, a push-pull driving circuit, an insulated gate bipolar transistor and a level switching circuit. The insulated gate bipolar transistor driving protector is characterized in that a first diode and a sixth resistor are connected in series between an output end of the push-pull driving circuit and a gate electrode of the insulated gate bipolar transistor; an RCD buffer circuit consisting of a buffer diode, a buffer capacitor ad a buffer resistor is connected between an emitting electrode and a collecting electrode of the insulated gate bipolar transistor; after the buffer diode and the buffer resistor are connected with each other in parallel, one end of the buffer diode is connected with the collecting electrode of the insulated gate bipolar transistor, and the buffer capacitor is connected in series between the other end of the buffer diode and the emitting electrode of the insulated gate bipolar transistor; and a first clamping diode and a second clamping diode are connected in series between the gate electrode and the emitting electrode of the insulated gate bipolar transistor. The insulated gate bipolar transistor driving protector provided by the utility model has good performance, can not be subjected to an error conducting situation because of power failure during a using process, and is safer to use.
Description
Technical field
The utility model relates to a kind of electric and electronic technical field, and particularly insulated gate bipolar transistor drives protector.
Background technology
Insulated gate bipolar transistor (IGBT) is the device that is composited by bipolarity power transistor and MOSFET, it has that input impedance height, speed are fast, the simple characteristics of Heat stability is good and driving electric power, low, the withstand voltage height of on state voltage is arranged again and bear the advantages such as electric current is large, insulated gate bipolar transistor is as the new power switching device, combine the advantage of above two kinds of devices, therefore obtaining more and more widely application in the power electronic technology now.Adopt well behaved drive circuit; can make power electronic device be operated in more satisfactory on off state; shorten switching time, reduce switching loss, therefore designing an insulated gate bipolar transistor simple in structure, that use safety, to drive protector particularly important.
Summary of the invention
The purpose of this utility model is that a kind of simple in structure, safe, the well behaved insulated gate bipolar transistor driving of use protector is provided in order to solve above-mentioned the deficiencies in the prior art.
To achieve these goals; the designed insulated gate bipolar transistor of the utility model drives protector; comprise total radio amplifier; push-pull driver circuit and insulated gate bipolar transistor; the output V2 of described total radio amplifier connects push-pull driver circuit; the output of push-pull driver circuit connects insulated gate bipolar transistor; be connected with the level shifting circuit that is formed by the first triode and the first resistor between the input of described total radio amplifier and the pwm signal; pwm signal connects the emitter of the first triode; the base stage of the first triode connects the first resistor; it is characterized in that being connected with between the grid of the output of push-pull driver circuit and insulated gate bipolar transistor the circuit by the first diode and the 6th resistor in series; between the emitter of insulated gate bipolar transistor and collector electrode, be connected with the RCD buffer circuit; described RCD buffer circuit comprises buffering diode; buffer resistance and buffer capacitor; after buffering diode and the buffer resistance parallel connection; one end connects the collector electrode of insulated gate bipolar transistor; the buffer capacitor of connecting between the emitter of the other end and insulated gate bipolar transistor; for the grid voltage of stable insulation grid bipolar transistor, between the grid of insulated gate bipolar transistor and emitter, be in series with the first catching diode and the second catching diode.
Simple in structure by above-mentioned design integrated circuit, in use can be because of when the power down situation; the situation that insulated gate bipolar transistor produces misleading; use safer; insulated gate bipolar transistor can effectively be suppressed and be reduced turn-off power loss when turn-offing overvoltage simultaneously, to the effect of components and parts starting protection.
Between the grid of the output of push-pull driver circuit and insulated gate bipolar transistor, be connected and also be connected with the 7th resistor; between the grid of insulated gate bipolar transistor and emitter, be connected with the driving protective resistor, insulated gate bipolar transistor is played the driving protective effect.
Described pwm signal is the pulse signal of a series of variable impulse widths, is generally the signal that single-chip microcomputer or digital signal processor DSP send, and this is that those skilled in the art is known, does not elaborate at this.
The insulated gate bipolar transistor Drive Protecting Circuit that the utility model obtains; simple in structure, functional by above-mentioned design integrated circuit; in use can be because of when the power down situation; the situation that insulated gate bipolar transistor produces misleading; use safer; insulated gate bipolar transistor can effectively be suppressed and be reduced turn-off power loss when turn-offing overvoltage simultaneously, to the effect of components and parts starting protection.
Description of drawings
Fig. 1 is the integrated circuit schematic diagram of embodiment.
Among the figure: total radio amplifier 1, push-pull driver circuit 2, level shifting circuit 3, pwm signal, RCD buffer circuit 4, insulated gate bipolar transistor IGBT, the first triode Q1, the first resistor R1, the first diode D1, the 6th resistor R6, buffering diode D4, buffer resistance R9, buffer capacitor C1, the first catching diode D2, the second catching diode D3, the 7th resistor R7, driving protective resistor R5, the given voltage VCC of direct current, power supply VDD.
Embodiment
Below in conjunction with drawings and Examples the utility model is further specified.
Embodiment:
As shown in Figure 1; the insulated gate bipolar transistor that the utility model provides drives protector; comprise total radio amplifier 1; push-pull driver circuit 2 and insulated gate bipolar transistor IGBT; the output V2 of described total radio amplifier 1 connects push-pull driver circuit 2; the output of push-pull driver circuit 2 connects insulated gate bipolar transistor IGBT; be connected with the level shifting circuit 3 that is formed by the first triode Q1 and the first resistor R1 between the input of described total radio amplifier 1 and the pwm signal; pwm signal connects the emitter of the first triode Q1; the base stage of the first triode Q1 connects the first resistor R1; the other end of the first resistor R1 connects the given voltage VCC of direct current; be connected with the circuit of connecting by the first diode D1 and the 6th resistor R6 between the grid G of the output of push-pull driver circuit 2 and insulated gate bipolar transistor IGBT; between the emitter E of insulated gate bipolar transistor IGBT and collector electrode C, be connected with RCD buffer circuit 4; described RCD buffer circuit 4 comprises buffering diode D4; buffer resistance R9 and buffering capacitor C 1; after buffering diode D4 and 9 parallel connections of buffering resistance R; one end connects the collector electrode C of insulated gate bipolar transistor IGBT; buffer capacitor C1 connects between the emitter E of the other end and insulated gate bipolar transistor IGBT; grid G voltage for stable insulation grid bipolar transistor IGBT; be in series with the first catching diode D2 and the second catching diode D3 between the grid G of insulated gate bipolar transistor IGBT and emitter E, described total radio amplifier 1 and push-pull driver circuit 2 provide driving voltage by power supply VDD.
Between the grid G of the output of push-pull driver circuit 2 and insulated gate bipolar transistor IGBT, be connected and also be connected with the 7th resistor R7, between the grid G of insulated gate bipolar transistor IGBT and emitter E, be connected with and drive protective resistor R5.
Specific works state: when pwm signal wherein is generally the signal that single-chip microcomputer or DSP send, control inputs signal as insulated gate bipolar transistor IGBT when pwm signal is input as high level, carries out level conversion by Q1, so that Q2 conducting, then the V2 point is high level, thereby drives the Q3 conducting, the Q4 cut-off, so that 1 point voltage is high potential, then drive insulated gate bipolar transistor IGBT by resistance R 7, this moment, D1 was equivalent to open circuit, and R6 is what disconnect.Because D1; D2 is the voltage stabilizing didoe of 15V; they can control the G point of insulated gate bipolar transistor IGBT at 15V; control insulated gate bipolar transistor IGBT conducting; buffering diode conducting this moment; to the buffer capacitor charging, so that the voltage of insulated gate bipolar transistor IGBT reduces, signal obtains buffering; components and parts have been protected; when pwm signal input is low level, the Q2 cut-off, the V2 point is low level; thereby drive the Q4 conducting; the Q3 cut-off, 1 level point is low, at this moment D1 conducting; so that R1 is in parallel with R2, thereby so that insulated gate bipolar transistor IGBT is cut-off state.When insulated gate bipolar transistor IGBT is in the conducting state situation; so that capacitor C 1 is charged; when insulated gate bipolar transistor IGBT when turn-offing overvoltage, can effectively be suppressed and be reduced turn-off power loss by the charging current on the buffer circuit 4, to the effect of components and parts starting protection.
Claims (2)
1. an insulated gate bipolar transistor drives protector; comprise total radio amplifier (1); push-pull driver circuit (2) and insulated gate bipolar transistor (IGBT); the output V2 of described total radio amplifier (1) connects push-pull driver circuit (2); the output of push-pull driver circuit (2) connects insulated gate bipolar transistor (IGBT); be connected with the level shifting circuit (3) that is formed by the first triode (Q1) and the first resistor (R1) between the input of described total radio amplifier (1) and the pwm signal; pwm signal connects the emitter of the first triode (Q1); the base stage of the first triode (Q1) connects the first resistor (R1); be connected with the circuit of connecting by the first diode (D1) and the 6th resistor (R6) between the output that it is characterized in that push-pull driver circuit (2) and the grid (G) of insulated gate bipolar transistor (IGBT); between the emitter (E) of insulated gate bipolar transistor (IGBT) and collector electrode (C), be connected with RCD buffer circuit (4); described RCD buffer circuit (4) comprises buffering diode (D4); buffer resistance (R9) and buffer capacitor (C1); after buffering diode (D4) and buffer resistance (R9) parallel connection; one end connects the collector electrode (C) of insulated gate bipolar transistor (IGBT); the buffer capacitor (C1) of connecting between the emitter (E) of the other end and insulated gate bipolar transistor (IGBT); for grid (G) voltage of stable insulation grid bipolar transistor (IGBT), between the grid (G) of insulated gate bipolar transistor (IGBT) and emitter (E), be in series with the first catching diode (D2) and the second catching diode (D3).
2. insulated gate bipolar transistor according to claim 1 drives protector; it is characterized in that between the grid (G) of the output of push-pull driver circuit (2) and insulated gate bipolar transistor (IGBT), being connected and also be connected with the 7th resistor (R7), between the grid (G) of insulated gate bipolar transistor (IGBT) and emitter (E), be connected with and drive protective resistor (R5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220300841 CN202663372U (en) | 2012-06-26 | 2012-06-26 | Insulated gate bipolar transistor driving protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220300841 CN202663372U (en) | 2012-06-26 | 2012-06-26 | Insulated gate bipolar transistor driving protector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202663372U true CN202663372U (en) | 2013-01-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220300841 Expired - Lifetime CN202663372U (en) | 2012-06-26 | 2012-06-26 | Insulated gate bipolar transistor driving protector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202663372U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199827A (en) * | 2013-02-22 | 2013-07-10 | 西安永电电气有限责任公司 | Protective circuit and driving circuit and control method of insulated gate bipolar transistor (IGBT) |
| CN105186847A (en) * | 2015-10-16 | 2015-12-23 | 桂林电子科技大学 | IGBT active clamping protection circuit |
| CN107395178A (en) * | 2017-07-04 | 2017-11-24 | 苏州捷芯威半导体有限公司 | Semiconductor power switch device and electronic equipment |
| CN108696267A (en) * | 2017-04-12 | 2018-10-23 | 赤多尼科两合股份有限公司 | A kind of field-effect tube driving device, driving method and for electric installation |
-
2012
- 2012-06-26 CN CN 201220300841 patent/CN202663372U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199827A (en) * | 2013-02-22 | 2013-07-10 | 西安永电电气有限责任公司 | Protective circuit and driving circuit and control method of insulated gate bipolar transistor (IGBT) |
| CN105186847A (en) * | 2015-10-16 | 2015-12-23 | 桂林电子科技大学 | IGBT active clamping protection circuit |
| CN108696267A (en) * | 2017-04-12 | 2018-10-23 | 赤多尼科两合股份有限公司 | A kind of field-effect tube driving device, driving method and for electric installation |
| CN108696267B (en) * | 2017-04-12 | 2021-11-30 | 赤多尼科两合股份有限公司 | Driving device and driving method of field effect transistor and power supply device |
| CN107395178A (en) * | 2017-07-04 | 2017-11-24 | 苏州捷芯威半导体有限公司 | Semiconductor power switch device and electronic equipment |
| CN107395178B (en) * | 2017-07-04 | 2020-07-07 | 苏州捷芯威半导体有限公司 | Semiconductor power switching device and electronic apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: NINGBO DEYE VARIABLE FREQUENCY TECHNOLOGY CO., LTD Free format text: FORMER NAME: NINGBO DEYE INVERTER CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 315806 Zhejiang Province, Ningbo city Beilun District Yongjiang Road No. 26 (Ningbo Deye frequency technology Limited by Share Ltd) Patentee after: NINGBO DEYE FREQUENCY TECHNOLOGY Co.,Ltd. Address before: 315806 Zhejiang Province, Ningbo city Beilun District Yongjiang Road No. 26 Patentee before: NINGBO DEYE FREQUENCY CONVERSION TECHNOLOGY CO.,LTD. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 315806 Zhejiang city of Ningbo province Beilun Daqi Yongjiang Road No. 26 (Ningbo Deye Inverter Technology Co. Ltd.) Patentee after: NINGBO DEYE FREQUENCY CONVERSION TECHNOLOGY CO.,LTD. Address before: 315806 Zhejiang Province, Ningbo city Beilun District Yongjiang Road No. 26 (Ningbo Deye frequency technology Limited by Share Ltd) Patentee before: NINGBO DEYE FREQUENCY TECHNOLOGY Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130109 |