CN202330630U - Detecting circuit for current and working condition of MOS (Metal Oxide Semiconductor) tube - Google Patents
Detecting circuit for current and working condition of MOS (Metal Oxide Semiconductor) tube Download PDFInfo
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- CN202330630U CN202330630U CN 201120343737 CN201120343737U CN202330630U CN 202330630 U CN202330630 U CN 202330630U CN 201120343737 CN201120343737 CN 201120343737 CN 201120343737 U CN201120343737 U CN 201120343737U CN 202330630 U CN202330630 U CN 202330630U
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Abstract
The utility model discloses a detecting circuit for the current and working condition of an MOS tube. The detecting circuit comprises a not gate U1, a gate U2, an electronic switch U3, an electronic switch U4, a resistor R1 and an MOS tube V1, wherein the control signal is respectively connected to the electronic switch U3 and the electronic switch U4 by the not gate U1 and the gate U2, and inverted by the not gate U1; the electronic switch U3 is communicated with an MOS detecting port, and the electronic switch U4 is communicated with a current detecting port; a source electrode and a lining electrode of the MOS tube V1 are grounded; a drain electrode of the MOS tube V1 is connected with supply voltage VCC by a load inductor U5; one end of the resistor R1 is connected with an intermediate node of the inductor U5 and the drain electrode of the MOS tube V1; and the other end of the resistor R1 is connected with the electronic switch U4. The detecting circuit has simple structure, quick reaction, good reliability, and low cost; the instantaneous current and instantaneous working condition of the MOS tube can be quickly detected simultaneously without increase of external size, additional connection with a high power resistor and increase of heat in the working process, so that the detecting circuit has good economic benefits and is suitable for popularization.
Description
Technical field
The utility model relates to a kind of electric current and Working state checking circuit of metal-oxide-semiconductor.
Background technology
The use of metal-oxide-semiconductor is very general, in the bigger place of power, such as the occasion of metal-oxide-semiconductors such as motor or transformer driving; To the current detecting or the state-detection of metal-oxide-semiconductor, generally all be to adopt external high-power resistance or shunt at present, exist volume very big; Detection speed is slow, very sensitive distributed parameter problem during high-power MOS tube uses, weak heat-dissipating; Problems such as cost is high, and reliability is weak.
The utility model content
The purpose of the utility model provide a kind of simple in structure, cost is low, heat is few, the metal-oxide-semiconductor testing circuit of good reliability.
The technical scheme that realizes the utility model purpose is a kind of electric current and Working state checking circuit of metal-oxide-semiconductor, comprises not gate U1, door U2, electronic switch U3, electronic switch U4, resistance R 1 and metal-oxide-semiconductor V1; Said control signal is connected electronic switch U3 and electronic switch U4, not gate U1 negate through not gate U1 with door U2 respectively; Said electronic switch U3 is communicated with the MOS detection port, and electronic switch U4 is communicated with the current detecting port; The source electrode of said metal-oxide-semiconductor V1 and lining utmost point ground connection, drain electrode meets supply voltage VCC through inductance U5; Said resistance R 1 one ends connect the intermediate node of inductance U5 and metal-oxide-semiconductor V1 drain electrode, and the other end connects electronic switch U4.
A kind of electric current of metal-oxide-semiconductor and Working state checking circuit also comprise resistance R 2 and resistance R 3; Said resistance R 2 and resistance R 3 series connection, intermediate node connects the grid of metal-oxide-semiconductor V1.
A kind of electric current of metal-oxide-semiconductor and Working state checking circuit also comprise resistance R 2 and stabilivolt; Said resistance R 2 and stabilivolt series connection, intermediate node connects the grid of metal-oxide-semiconductor V1.。
A kind of electric current of metal-oxide-semiconductor and Working state checking circuit also comprise voltage stabilizing diode V2; Said resistance R 1 one ends connect the intermediate node of electronic switch U4 and voltage stabilizing diode V2 negative terminal, voltage stabilizing diode V2 positive ending grounding.
Adopted technique scheme, the utlity model has following beneficial effect: the utility model is simple in structure, and reaction fast; Good reliability, cost is low, does not increase external volume; Need not extraly connect high-power resistance, not increase heat during work in addition, simultaneously the momentary current of fast detecting metal-oxide-semiconductor and the instantaneous duty of metal-oxide-semiconductor; Good economic benefits is arranged, be suitable for promoting.
Description of drawings
For the content that makes the utility model is expressly understood more easily,, the utility model is done further detailed explanation, wherein below according to specific embodiment and combine accompanying drawing
Fig. 1 is the circuit theory diagrams of the utility model.
Embodiment
(embodiment 1)
See Fig. 1, a kind of electric current of metal-oxide-semiconductor and Working state checking circuit comprise not gate U1, door U2, electronic switch U3, electronic switch U4, resistance R 1, resistance R 2, resistance R 3, metal-oxide-semiconductor V1 and voltage stabilizing diode V2; Control signal is connected electronic switch U3 and electronic switch U4, not gate U1 negate through not gate U1 with door U2 respectively; Electronic switch U3 is communicated with the MOS detection port, and switch U4 is communicated with the current detecting port; The source electrode of metal-oxide-semiconductor V1 and lining utmost point ground connection, drain electrode meets supply voltage VCC through inductance U5; Resistance R 1 one ends connect the intermediate node of switch U4 and voltage stabilizing diode V2 negative terminal.Voltage stabilizing diode V2 positive ending grounding.Resistance R 2 and resistance R 3 series connection, intermediate node connects the grid of metal-oxide-semiconductor V1, grid end bias voltage is provided for metal-oxide-semiconductor V1.Resistance R 3 also can replace (not shown) with stabilivolt, is used to protect the grid of metal-oxide-semiconductor V not breakdown.
Control signal is connected electronic switch U3 and electronic switch U4 through not gate U1 with a door U2 respectively, the closure of control electronic switch U3 and U4 and opening, and a not gate U1 and a U2 are used for passage is selected.When the control signal input high level, select current channel, specifically, and door U2 output high level, switch U4 is closed, the turn-on current sense channel; At this moment, detect the drain voltage of metal-oxide-semiconductor V1 through resistance R 1, i.e. the voltage that on conducting resistance, forms of metal-oxide-semiconductor V1 conducting electric current, electric current is used for metal-oxide-semiconductor current detecting and metal-oxide-semiconductor and protects fast through resistance R 1 to current detecting port.
When the control signal input low level, select sense channel, specifically, through negate, not gate U1 exports high level, and switch U3 is closed, the on-state sense channel; No cut-in voltage, metal-oxide-semiconductor V1 ends, and the drain voltage of metal-oxide-semiconductor transmits the state-detection port of voltage (as high level) to U3 to metal-oxide-semiconductor of V2 from R1.
Above-described specific embodiment; Purpose, technical scheme and beneficial effect to the utility model have carried out further explain, it should be understood that the above is merely the specific embodiment of the utility model; Be not limited to the utility model; All within the spirit and principle of the utility model, any modification of being made, be equal to replacement, improvement etc., all should be included within the protection domain of the utility model.
Claims (4)
1. the electric current of a metal-oxide-semiconductor and Working state checking circuit is characterized in that: comprise not gate U1, door U2, electronic switch U3, electronic switch U4, resistance R 1 and metal-oxide-semiconductor V1; Said control signal is connected electronic switch U3 and electronic switch U4, not gate U1 negate through not gate U1 with door U2 respectively; Said switch U3 is communicated with the MOS detection port, and switch U4 is communicated with the current detecting port; The source electrode of said metal-oxide-semiconductor V1 and lining utmost point ground connection, drain electrode meets supply voltage VCC through inductance U5; Said resistance R 1 one ends connect the intermediate node of inductance U5 and metal-oxide-semiconductor V1 drain electrode, and the other end connects electronic switch U4.
2. the electric current of a kind of metal-oxide-semiconductor according to claim 1 and Working state checking circuit is characterized in that: also comprise resistance R 2 and resistance R 3 or stabilivolt; Said resistance R 2 and resistance R 3 or stabilivolt series connection, intermediate node connects the grid of metal-oxide-semiconductor V1.
3. the electric current of a kind of metal-oxide-semiconductor according to claim 1 and Working state checking circuit is characterized in that: also comprise resistance R 2 and stabilivolt; Said resistance R 2 and stabilivolt series connection, intermediate node connects the grid of metal-oxide-semiconductor V1.
4. according to the electric current and the Working state checking circuit of claim 2 or 3 described a kind of metal-oxide-semiconductors, it is characterized in that: also comprise voltage stabilizing diode V2; Said resistance R 1 one ends connect the intermediate node of electronic switch U4 and voltage stabilizing diode V2 negative terminal, voltage stabilizing diode V2 positive ending grounding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120343737 CN202330630U (en) | 2011-09-14 | 2011-09-14 | Detecting circuit for current and working condition of MOS (Metal Oxide Semiconductor) tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120343737 CN202330630U (en) | 2011-09-14 | 2011-09-14 | Detecting circuit for current and working condition of MOS (Metal Oxide Semiconductor) tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202330630U true CN202330630U (en) | 2012-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120343737 Expired - Fee Related CN202330630U (en) | 2011-09-14 | 2011-09-14 | Detecting circuit for current and working condition of MOS (Metal Oxide Semiconductor) tube |
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| CN (1) | CN202330630U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103543396A (en) * | 2012-07-13 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | Testing device and testing method used for NMOS (n-channel metal oxide semiconductor) transistor in high-k metal gate |
| CN106950414A (en) * | 2017-02-24 | 2017-07-14 | 深圳陆巡科技有限公司 | Metal-oxide-semiconductor current sampling circuit and push-pull circuit |
| CN107356856A (en) * | 2017-06-26 | 2017-11-17 | 中国空间技术研究院 | A kind of triple channel voltage feedback VDMOS device single particle effect high-precision detection device |
| CN109239567A (en) * | 2018-10-12 | 2019-01-18 | 福建星云电子股份有限公司 | Detection system a kind of while that multiple metal-oxide-semiconductors are matched |
| CN115840123A (en) * | 2023-03-01 | 2023-03-24 | 佛山市联动科技股份有限公司 | Transistor parameter testing device and testing method |
-
2011
- 2011-09-14 CN CN 201120343737 patent/CN202330630U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103543396A (en) * | 2012-07-13 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | Testing device and testing method used for NMOS (n-channel metal oxide semiconductor) transistor in high-k metal gate |
| CN103543396B (en) * | 2012-07-13 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of proving installation for high-k/metal gate nmos pass transistor and method of testing |
| CN106950414A (en) * | 2017-02-24 | 2017-07-14 | 深圳陆巡科技有限公司 | Metal-oxide-semiconductor current sampling circuit and push-pull circuit |
| CN106950414B (en) * | 2017-02-24 | 2020-11-17 | 深圳陆巡科技有限公司 | MOS tube current sampling circuit and push-pull circuit |
| CN107356856A (en) * | 2017-06-26 | 2017-11-17 | 中国空间技术研究院 | A kind of triple channel voltage feedback VDMOS device single particle effect high-precision detection device |
| CN109239567A (en) * | 2018-10-12 | 2019-01-18 | 福建星云电子股份有限公司 | Detection system a kind of while that multiple metal-oxide-semiconductors are matched |
| CN109239567B (en) * | 2018-10-12 | 2023-09-12 | 福建星云电子股份有限公司 | Detection system for simultaneously pairing multiple MOS tubes |
| CN115840123A (en) * | 2023-03-01 | 2023-03-24 | 佛山市联动科技股份有限公司 | Transistor parameter testing device and testing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20140914 |
|
| EXPY | Termination of patent right or utility model |