CN201898438U - Insulated gate bipolar translator (IGBT) driving circuit used for traction convertor of city rail vehicle - Google Patents
Insulated gate bipolar translator (IGBT) driving circuit used for traction convertor of city rail vehicle Download PDFInfo
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- CN201898438U CN201898438U CN2010205646760U CN201020564676U CN201898438U CN 201898438 U CN201898438 U CN 201898438U CN 2010205646760 U CN2010205646760 U CN 2010205646760U CN 201020564676 U CN201020564676 U CN 201020564676U CN 201898438 U CN201898438 U CN 201898438U
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Abstract
The utility model discloses an insulated gate bipolar translator (IGBT) driving circuit for a traction convertor of a city rail vehicle. The IGBT driving circuit comprises a direct current (DC)- direct current (DC) isolation power supply unit, an IGBT short circuit protection detecting unit, a logical processing unit and a grid power amplification unit, wherein the output end of the DC-DC isolation power supply unit is connected with an over-voltage protection unit, the logical processing unit, the grid power amplification unit and an emitting electrode of an IGBT respectively; the input end of the DC-DC isolation power supply unit is connected with an under-voltage protection unit; the logical processing unit is connected with the grid power amplification unit, the IGBT short circuit protection detecting unit, the over-voltage protection unit and a light coupling isolation unit respectively; the DC-DC isolation power supply unit adopts a transformer for isolation. The IGBT driving circuit for the traction convertor of the city rail vehicle is isolated from an input power through the transformer, and the IGBT driving circuit can be connected with an E electrode of the IGBT in an isolation and suspension way, so that the driving is more reliable. The IGBT driving circuit is set up by adopting completely-isolated components, therefore, the maintenance and the debugging are very convenient.
Description
Technical field
The utility model relates to a kind of control appliance of dynamo-electric gear, relates in particular to a kind of IGBT drive circuit that is used for city rail vehicle traction convertor or AuCT.
Background technology
At home and abroad current, the IGBT Drive technology is ripe, and wherein, the 2sd315 of CONCEPT company and 2sc0435 driver have obtained using more widely.But, these two kinds of drivers if such or such problem, be difficult to maintenance process, have only the replacing module, cost of idleness.Therefore, lot of domestic and international producer does not utilize driver module or chip for driving to do drive plate usually at present, but independent research so that search problem conveniently, is convenient to debugging.
Summary of the invention
Be to solve the problems referred to above that prior art exists, the utility model will design and a kind ofly not only drive reliably, but also convenient for maintaining and the IGBT drive circuit that is used for the city rail vehicle traction convertor that is easy to debug.
To achieve these goals, the technical solution of the utility model is as follows: a kind of IGBT drive circuit that is used for the city rail vehicle traction convertor, comprise DC-DC insulating power supply unit, IGBT short-circuit protection detecting unit, Logical processing unit and grid power amplification unit, the output of described DC-DC insulating power supply unit is connected with the emitter of Overvoltage protecting unit, Logical processing unit, grid power amplification unit and IGBT respectively, and its input is connected with the under-voltage protection unit; The gate that described Logical processing unit is passed through self respectively is connected, passes through self with the grid power amplification unit operational amplifier is connected with IGBT short-circuit protection detecting unit, and is connected with the output of Overvoltage protecting unit and the input of light-coupled isolation unit respectively; The output of light-coupled isolation unit also is connected with the gate of Logical processing unit, and IGBT short-circuit protection detecting unit is connected with the collector electrode of IGBT; Described DC-DC insulating power supply unit adopts transformer isolation.
The P channel MOS tube F3 of grid power amplification unit described in the utility model is made up of the P channel MOS tube of drain current 2～3A, middle power NPN triode F1 is made up of pliotron in 2～3 NPN Darlingtons, middle power P NP triode F2 is made up of pliotron in 2～3 PNP Darlingtons, and PNP triode T3 is that the PNP triode of collector current 1A is formed.
Compared with prior art, the utlity model has following beneficial effect:
1, because the utility model is imported power supply by transformer isolation, can obtain isolating suspension ground and be connected with the E utmost point of IGBT, make that driving is more reliable.
2, because short-circuit protection circuit of the present utility model is protected IGBT, can prevent the mistake protection, overcurrent protection then can be passed through sensor.
3, because Overvoltage protecting unit of the present utility model can effectively prevent the grid overvoltage of IGBT, guaranteed that the chip of Logical processing unit can operate as normal.
4,, thereby can access high gate pole peak current and short rising, trailing edge because the PNP triode T3 and the middle power P NP triode F2 recombination energy of grid power amplification unit of the present utility model access higher current amplification factor.
5, because the utility model adopts the element that separates fully to build, special convenient for maintaining and debugging.
Description of drawings
7 in the total accompanying drawing of the utility model, wherein:
Fig. 1 is an IGBT drive circuit flow chart.
Fig. 2 is a under-voltage protection element circuit schematic diagram.
Fig. 3 is the Overvoltage protecting unit circuit diagram.
Fig. 4 is the Logical processing unit circuit diagram.
Fig. 5 is an IGBT short-circuit protection detection cell circuit schematic diagram.
Fig. 6 is a grid power amplification unit circuit diagram.
Fig. 7 is a DC-DC insulating power supply element circuit schematic diagram.
Among the figure, 1, DC-DC insulating power supply unit, 2, the under-voltage protection unit, 3, Overvoltage protecting unit, 4, Logical processing unit, 5, IGBT short-circuit protection detecting unit, 6, the grid power amplification unit.
Embodiment
Below in conjunction with accompanying drawing the utility model is described further.Shown in Fig. 1-7, a kind of IGBT drive circuit that is used for the city rail vehicle traction convertor, comprise DC-DC insulating power supply unit 1, IGBT short-circuit protection detecting unit 5, Logical processing unit 4 and grid power amplification unit 6, the output of described DC-DC insulating power supply unit 1 is connected with the emitter of Overvoltage protecting unit 3, Logical processing unit 4, grid power amplification unit 6 and IGBT respectively, and its input is connected with under-voltage protection unit 2; The gate that described Logical processing unit 4 is passed through self respectively is connected, passes through self with grid power amplification unit 6 operational amplifier is connected with IGBT short-circuit protection detecting unit 5, and is connected with the output of Overvoltage protecting unit 3 and the input of light-coupled isolation unit respectively; The output of light-coupled isolation unit also is connected with the gate of Logical processing unit 4, and IGBT short-circuit protection detecting unit 5 is connected with the collector electrode of IGBT; Described DC-DC insulating power supply unit 1 adopts transformer isolation.The P channel MOS tube F3 of described grid power amplification unit 6 is made up of the P channel MOS tube of drain current 2～3A, middle power NPN triode F1 is made up of pliotron in 2～3 NPN Darlingtons, middle power P NP triode F2 is made up of pliotron in 2～3 PNP Darlingtons, and PNP triode T3 is that the PNP triode of collector current 1A is formed.
Operation principle of the present utility model is as follows:
Figure 1 shows that the system flow chart that the utility model is used.System accepts outside next pwm signal, and through light-coupled isolation, if do not receive overvoltage protection signal and overcurrent short-circuit protection signal, then this pulse signal forms IGBT gate pole power drive signal through power amplification circuit.The amplitude of drive signal is+VDD ,-VEE.The insulating power supply of system is made up of DC-DC, if it is under-voltage to detect supply voltage, then sends the power protection signal, and guard signal Vcom as shown in Figure 5 changes low (GND) into by high (VDD), then blocks the T1 pipe of accompanying drawing 1 and the pulse of T2 pipe.Then the DC-DC power supply is not worked, and then all circuit of the secondary of system are not worked pulse blocking.
Fig. 7 is the circuit diagram of DC-DC insulating power supply unit 1.Capacitor C 1 is as the clamp capacitor in the active clamp converter, and resistance R is as the resistance that discharges and recharges of clamp capacitor.Triode T1 is a main switch, uses the N-channel MOS pipe, and triode T2 is a clamper tube, also uses the N-channel MOS pipe.The pwm signal of system and Vcom signal and, PWM operate as normal if Vcom is high always, if Vcom drags down, locking pulse then, system does not work.
Fig. 5 is the circuit diagram of IGBT short-circuit protection detecting unit 5.This circuit can be discerned short circuit and load short circuits between the short circuit of IGBT brachium pontis, inverter output.If above three kinds of short circuit phenomenon take place, then IGBT sharply increases and is in undersaturated condition owing to flowing through electric current, and Vce increases, if Vce greater than VDD, then Vce charges to D1 by R1-Rn.The voltage at SC1 two ends also increases simultaneously, the comparator upset if the voltage at SC1 two ends has surpassed VREF, and comparator output signal adds pulse logic, locking pulse.The identification of this kind short-circuit protection is to occur in IGBT conducting situation; DRT signal as shown in Figure 5 is opposite with gate electrode drive signals; and making it that delay time of us level be arranged by hardware circuit, this delay time will be avoided the ON time of IGBT, but again can not be oversize in case missed the fault origination point.
Fig. 3 is the circuit diagram of Overvoltage protecting unit 4.If DC-DC insulating power supply unit 1 output voltage raises, that is to say that VDD or VEE have a rising, if then its dividing potential drop by resistance R 3 and R4 surpasses VREF2, comparator then overturns.The standard of protection is malleation less than 20V, is protection IGBT, and Vref2 adjusts chip MAX6250 by DC-DC insulating power supply unit 1 secondary through overvoltage and produces stable 5V voltage.If then DC-DC insulating power supply unit 1 voltage raises, the voltage of adjusting chip MAX6250 generation through overvoltage can not change yet, so obtain stable protecting group on schedule.
Fig. 6 is the circuit diagram of grid power amplification unit 6.We can analyze the PNP compositing amplification tube that adopts F3 and F1 to be composited when opening thus, shutoff is the PNP compositing amplification tube that is composited with T3 and F2, this amplifying circuit can obtain high current amplification factor and high peak current, satisfies the needs of IGBT switch.
Claims (2)
1. IGBT drive circuit that is used for the city rail vehicle traction convertor, it is characterized in that: comprise DC-DC insulating power supply unit (1), IGBT short-circuit protection detecting unit (5), Logical processing unit (4) and grid power amplification unit (6), the output of described DC-DC insulating power supply unit (1) is connected with the emitter of Overvoltage protecting unit (3), Logical processing unit (4), grid power amplification unit (6) and IGBT respectively, and its input is connected with under-voltage protection unit (2); The gate that described Logical processing unit (4) is passed through self respectively is connected, passes through self with grid power amplification unit (6) operational amplifier is connected with IGBT short-circuit protection detecting unit (5), and is connected with the output of Overvoltage protecting unit (3) and the input of light-coupled isolation unit respectively; The output of light-coupled isolation unit also is connected with the gate of Logical processing unit (4), and IGBT short-circuit protection detecting unit (5) is connected with the collector electrode of IGBT; Described DC-DC insulating power supply unit (1) adopts transformer isolation.
2. a kind of IGBT drive circuit that is used for the city rail vehicle traction convertor according to claim 1, it is characterized in that: the P channel MOS tube F3 of described grid power amplification unit (6) is made up of the P channel MOS tube of drain current 2～3A, middle power NPN triode F1 is made up of pliotron in 2～3 NPN Darlingtons, middle power P NP triode F2 is made up of pliotron in 2～3 PNP Darlingtons, and PNP triode T3 is that the PNP triode of collector current 1A is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205646760U CN201898438U (en) | 2010-10-14 | 2010-10-14 | Insulated gate bipolar translator (IGBT) driving circuit used for traction convertor of city rail vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205646760U CN201898438U (en) | 2010-10-14 | 2010-10-14 | Insulated gate bipolar translator (IGBT) driving circuit used for traction convertor of city rail vehicle |
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| Publication Number | Publication Date |
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| CN201898438U true CN201898438U (en) | 2011-07-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010205646760U Expired - Fee Related CN201898438U (en) | 2010-10-14 | 2010-10-14 | Insulated gate bipolar translator (IGBT) driving circuit used for traction convertor of city rail vehicle |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036214A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power switch series circuit and control method thereof |
| CN103033732A (en) * | 2012-11-09 | 2013-04-10 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
| CN103326324A (en) * | 2013-06-13 | 2013-09-25 | 浙江海得新能源有限公司 | IGBT module parallel connection protection circuit applied to high-power inverter |
| WO2013174137A1 (en) * | 2012-05-21 | 2013-11-28 | 永济新时速电机电器有限责任公司 | Drive circuit of insulated gate bipolar transistor |
| CN103812312A (en) * | 2012-11-08 | 2014-05-21 | 中国北车集团大同电力机车有限责任公司 | Auxiliary converter buck chopping power module drive device |
| CN105958806A (en) * | 2016-05-31 | 2016-09-21 | 中电普瑞科技有限公司 | High-voltage sub-module based on MMC circuit topology |
| US9692227B2 (en) | 2012-02-29 | 2017-06-27 | Abb Schweiz Ag | DC supply unit for a power provision unit |
| CN110994959A (en) * | 2019-12-06 | 2020-04-10 | 潍坊学院 | Transformer isolation IGBT drive control system, method and circuit |
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2010
- 2010-10-14 CN CN2010205646760U patent/CN201898438U/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8837183B2 (en) | 2011-09-29 | 2014-09-16 | Delta Electronics (Shanghai) Co., Ltd. | Power switch series circuit and control method thereof |
| CN103036214B (en) * | 2011-09-29 | 2015-07-08 | 台达电子企业管理（上海）有限公司 | Power switch series circuit and control method thereof |
| CN103036214A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power switch series circuit and control method thereof |
| US9692227B2 (en) | 2012-02-29 | 2017-06-27 | Abb Schweiz Ag | DC supply unit for a power provision unit |
| WO2013174137A1 (en) * | 2012-05-21 | 2013-11-28 | 永济新时速电机电器有限责任公司 | Drive circuit of insulated gate bipolar transistor |
| CN103427607A (en) * | 2012-05-21 | 2013-12-04 | 永济新时速电机电器有限责任公司 | Driving circuit of insulated gate bipolar transistor |
| CN103427607B (en) * | 2012-05-21 | 2015-12-02 | 永济新时速电机电器有限责任公司 | The drive circuit of insulated gate bipolar transistor |
| CN103812312A (en) * | 2012-11-08 | 2014-05-21 | 中国北车集团大同电力机车有限责任公司 | Auxiliary converter buck chopping power module drive device |
| CN103812312B (en) * | 2012-11-08 | 2016-08-24 | 中车大同电力机车有限公司 | AuCT buck chopper power model driving means |
| CN103033732B (en) * | 2012-11-09 | 2015-05-20 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
| CN103033732A (en) * | 2012-11-09 | 2013-04-10 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
| CN103326324A (en) * | 2013-06-13 | 2013-09-25 | 浙江海得新能源有限公司 | IGBT module parallel connection protection circuit applied to high-power inverter |
| CN103326324B (en) * | 2013-06-13 | 2015-12-02 | 浙江海得新能源有限公司 | A kind of IGBT module parallel protective circuit be applied in high-power inverter |
| CN105958806A (en) * | 2016-05-31 | 2016-09-21 | 中电普瑞科技有限公司 | High-voltage sub-module based on MMC circuit topology |
| CN110994959A (en) * | 2019-12-06 | 2020-04-10 | 潍坊学院 | Transformer isolation IGBT drive control system, method and circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110713 Termination date: 20131014 |