CN103178694B - Insulated gate bipolar transistor gate driving push-pull circuit - Google Patents
Insulated gate bipolar transistor gate driving push-pull circuit Download PDFInfo
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- CN103178694B CN103178694B CN201310065497.0A CN201310065497A CN103178694B CN 103178694 B CN103178694 B CN 103178694B CN 201310065497 A CN201310065497 A CN 201310065497A CN 103178694 B CN103178694 B CN 103178694B
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Abstract
The invention discloses an insulated gate bipolar transistor (IGBT) gate driving push-pull circuit. The IGBT gate driving push-pull circuit is powered by a positive-negative power supply of a driving chip secondary side, and output positive-negative level. A pre-push-pull circuit, a level converting circuit and a post-push-pull circuit share the positive-negative power supply of the driving chip secondary side. The output of the driving chip is connected with the input of the pre-push-pull circuit; the output of the pre-push-pull circuit is connected with the level converting circuit; the output of the level converting circuit is connected with the post-push-pull circuit; and the output of the post-push-pull circuit is connected with a gate driving resistor of the IGBT. The pre-push-pull circuit is combined with the level converting circuit to provide a driving signal of interlocking and a hardware dead zone for MOS (metal oxide semiconductors) of the post-push-pull circuit, so that direct communications of the interior of the MOS push-pull structure is avoided; and GS voltage of the MOS is limited in a range of +/- 20V, so that reliable operation of the MOS is guaranteed. Adopting the MOS, the post-push-pull circuit can cooperate with effective IGBT gate clamps to limit IGBT short-circuit currents, and improve operation reliability of the IGBT.
Description
Technical field
The present invention relates to a kind of igbt gate-drive push-pull circuit, particularly relate to the igbt gate-drive push-pull circuit coordinating the negative voltage of effective gate pole clamper to turn off.
Background technology
So-called igbt (Insolated Gate Bipolar Transistor, IGBT) gate pole clamper refers to by the gate voltage clamper of circuit design by igbt (IGBT), that is: when there being external action, as short circuit cause the passive lifting of IGBT gate voltage time, maintain gate voltage by circuit design and stablize.This is the necessary functions ensureing IGBT reliably working.
During IGBT short circuit, Ic acutely increases, and there is (see figure 9) due to miller capacitance, and in this process, IGBT gate potentials has the trend of lifting, and this effect comes from collector electrode, but not drive circuit.The size of short circuit current affects very large, so must carry out effective gate pole clamper by gate voltage.The mode of gate pole clamper generally has following several:
Mode one as shown in Figure 10.Which is when the temperature of TVS is lower, and TVS breakdown point declines, TVS conducting when may cause normally working, and the discreteness of TVS causes being difficult to carry out Exact Design.
Mode two as shown in figure 11.The push-pull circuit of which adopts triode, and cause power supply needs to accomplish+16 ~+17V, add the pressure drop of schottky clamp diode, gate pole may arrive 17.5V could by clamper, and clamping effect is poor.
Mode three as shown in figure 12.The push-pull circuit of which, owing to adopting metal-oxide-semiconductor, makes power supply accomplish 15V, and coordinate gate pole clamper Schottky diode, clamping effect is better.
Along with the increase of IGBT power, IGBT drive the reduction of resistance and module internal resistance, the peak inrush current needed for IGBT drives constantly rises.But the driving force of driving chip is limited, a lot of occasion driving chip directly uses driving chip to drive the scarce capacity of IGBT.For addressing this problem, the general driving chip rear class that adopts connects the method for push-pull amplifier circuit to improve the driving force of driving chip, to realize the driving of high-power IGBT.
Four kinds of topologys are common driving chip rear class push-pull amplifier circuit topologys below.The first is that document is extensively mentioned, other three kinds are derived on this basis, also extensively by frequency converter, servo-driver producer are used.
1, triode is recommended and is amplified topology (one) (see figure 1)
Fig. 5 in paper " a kind of drive circuit for high-power IGBT " (" electric drive automation " the 1st phase in 2010), Fig. 3 in " a kind of drive circuit of New IGBT module " (" ZhongKai Agriculture Engineering Academy journal " the 3rd phase in 2012), Fig. 1 in " the practical drive circuit of a kind of IGBT " (" electric drive " the 6th phase in 1999) and the Fig. 3 in patent " a kind of IGBT drive and protection circuit " (application number: 200910225997.X), " suppressing the drive circuit of IGBT overcurrent " (application number: the Fig. 4 201120390253.6), " a kind of IGBT drives push-pull circuit " (application number: Fig. 1 ~ 5 201210214858.9) all adopt similar triode to recommend the form of amplifying topology ().
The advantage of this topology: (1) positive logic.(2) be simple and easy to use.
The shortcoming of this topology: (1) gate pole clamping effect is poor, suppresses IGBT short circuit current ability.Triode is when peak drive current is larger, and CE pressure drop becomes higher, and also there is certain saturation voltage drop during saturation conduction.Therefore, for ensureing to be driven the Vge of IGBT to be+15V, supply voltage must accomplish+16 ~+17V.But the higher indirect consequence caused of power supply is that the gate pole clamping effect of drive circuit is poor, greatly increased by driving IGBT short circuit current, the risk that IGBT damages increases.(2) there is straight-through possibility in push-pull configuration inside.May exist and recommend phenomenon straight-through between pipe up and down, cause Switching Power Supply moment saturated, affect whole system and power, greatly reduce system reliability.(3) loss is larger.Have the saturation voltage drop of 0.7V during triode saturation conduction, when doing driving push-pull cascade, loss is comparatively large, and especially in the occasion that switching frequency is higher, heating obviously.
2, triode is recommended and is amplified topology (two) (see figure 2)
The advantage of this topology: be simple and easy to use.
The shortcoming of this topology: (1) gate pole clamping effect is poor, suppresses IGBT short circuit current ability.Triode is when peak drive current is larger, and CE pressure drop becomes higher, and also there is certain saturation voltage drop during saturation conduction.Therefore, for ensureing to be driven the Vge of IGBT to be+15V, supply voltage must accomplish+16 ~+17V.But the higher indirect consequence caused of power supply is that the gate pole clamping effect of drive circuit is poor, greatly increased by driving IGBT short circuit current, the risk that IGBT damages increases.(2) push-pull configuration inside exists straight-through.Exist and recommend leading directly to up and down between pipe, cause Switching Power Supply moment saturated, affect whole system and power, greatly reduce system reliability.So-called straight-through, refer to that in half-bridge topology, top tube and down tube conducting simultaneously causes the phenomenon of a class short circuit.This phenomenon harmfulness is very large, easily causes system irrecoverability to damage.(3) loss is larger.Have the saturation voltage drop of 0.7V during triode saturation conduction, when doing driving push-pull cascade, loss is comparatively large, and especially in the occasion that switching frequency is higher, heating obviously.(4) antilogical.
3, metal-oxide-semiconductor is drawn and is amplified topology (one) (see figure 3)
The advantage of this topology: (1) gate pole clamping effect is good, can effectively suppress IGBT short circuit current.Owing to adopting metal-oxide-semiconductor push-pull topology, supply voltage can accomplish+15V, and coordinate schottky clamp diode to carry out gate pole clamper, effect is better, effectively can suppress by the increase driving IGBT short circuit current, avoid IGBT to damage.(2) loss is lower.Metal-oxide-semiconductor does and drives push-pull topology loss lower, particularly in the occasion that switching frequency is higher, with the obvious advantage.(3) be simple and easy to use.(4) positive logic.
The shortcoming of this topology: (1) metal-oxide-semiconductor GS overtension.Metal-oxide-semiconductor GS will bear ± 23V voltage, exceedes ± 20V, and general metal-oxide-semiconductor cannot realize, and must buy special metal-oxide-semiconductor.(2) the GS voltage of recommending metal-oxide-semiconductor can by the impact of IGBT gate voltage.When gate voltage lifting, along with the G point voltage of IGBT raises, upper metal-oxide-semiconductor GS voltage reduces gradually, and the conduction voltage drop of metal-oxide-semiconductor increases, and causes IGBT gate voltage to be about 11V, can not be completely open-minded far below 15V, IGBT.(3) there is straight-through possibility in push-pull configuration inside.Exist and recommend the possibility that pipe is straight-through up and down, cause Switching Power Supply moment saturated, affect whole system and power, greatly reduce system reliability.
4, metal-oxide-semiconductor is recommended and is amplified topology (two) (see figure 4)
The advantage of this topology: (1) gate pole clamping effect is good, can effectively suppress IGBT short circuit current.Owing to adopting metal-oxide-semiconductor push-pull topology, supply voltage can accomplish+15V, and coordinate schottky clamp diode to carry out gate pole clamper, effect is better, effectively can suppress by the increase driving IGBT short circuit current, avoid IGBT to damage.(2) loss is lower.Metal-oxide-semiconductor does and drives push-pull topology loss lower, particularly in the occasion that switching frequency is higher, with the obvious advantage.(3) be simple and easy to use.(4) the GS voltage of metal-oxide-semiconductor is recommended not by the impact of IGBT gate voltage.The metal-oxide-semiconductor conduction voltage drop avoiding the lifting of gate pole level to bring increases phenomenon, is driven the gate voltage of IGBT can reach normal 15V, IGBT completely open-minded.
The shortcoming of this topology: (1) metal-oxide-semiconductor GS overtension.Metal-oxide-semiconductor GS will bear ± 23V voltage, exceedes ± 20V, and general metal-oxide-semiconductor cannot realize, and must buy special metal-oxide-semiconductor.(2) push-pull configuration inside exists straight-through.Exist to recommend to manage up and down and lead directly to, cause Switching Power Supply moment saturated, affect whole system and power, greatly reduce the reliability of system.(3) antilogical.
The technological deficiency that existing IGBT drives push-pull circuit to exist, is summarized as follows:
The following technical problem of triode push-pull topology ubiquity: (1) gate pole clamping effect is poor, and IGBT short circuit current rejection ability is poor; (2) loss is larger; (3) push-pull configuration inside may exist straight-through, entire system poor reliability.
The following technical problem of metal-oxide-semiconductor push-pull topology ubiquity: (1) metal-oxide-semiconductor GS voltage higher than ± 20V, push-pull circuit poor reliability; (2) push-pull configuration inside may exist straight-through, entire system poor reliability; (3) the GS voltage of metal-oxide-semiconductor may be subject to by the impact driving IGBT gate voltage, causes metal-oxide-semiconductor conduction voltage drop excessive.
On the whole, adopt triode push-pull topology cannot realize effective gate pole clamper, cause and easily damaged when short circuit occurs by driving IGBT, and adopt metal-oxide-semiconductor push-pull topology metal-oxide-semiconductor itself easily to damage, cause entire system poor reliability.
Summary of the invention
Technical problem to be solved by this invention is the defect overcoming prior art existence, propose a kind of igbt gate-drive push-pull circuit, both effective gate pole clamper can have been coordinated, ensure by the reliability driving IGBT, can ensure that again push-pull configuration inner metal-oxide-semiconductor GS voltage power supply is in place of safety, the straight-through phenomenon of push-pull configuration inside can also be avoided simultaneously, ensure the reliability of entire system.
The present invention realizes the technical scheme that goal of the invention adopts: igbt gate-drive push-pull circuit, comprises driving chip and IGBT gate drive circuit, driving chip secondary positive-negative power supply, and positive negative level exports; It is characterized in that: also comprise prime push-pull circuit, level shifting circuit and rear class push-pull circuit; The positive-negative power of described prime push-pull circuit, level shifting circuit and rear class push-pull circuit common drive chip secondary, the output of driving chip connects the input of prime push-pull circuit, the output of prime push-pull circuit is connected with level shifting circuit, the output of level shifting circuit is connected with rear class push-pull circuit, and the output of rear class push-pull circuit is connected with IGBT gate-drive resistance.
Described prime push-pull circuit is by resistance R
1, PNP triode Q
1with NPN triode Q
2form; Resistance R
1one end is connected with driving chip output, the other end and PNP triode Q
1with NPN triode Q
2base stage be connected; PNP triode Q
1emitter be connected with positive supply, NPN triode Q
2emitter be connected with negative supply, PNP triode Q
1collector electrode give late-class circuit as output, NPN triode Q
2collector electrode give late-class circuit as another output.
Level shifting circuit is by resistance R
2, resistance R
3, resistance R
4be followed in series to form; Resistance R
2be connected with positive supply, resistance R
4be connected with negative supply; Resistance R
2with resistance R
3tie point (node) O
1with the PNP triode Q of prime push-pull circuit
1collector electrode is connected, and gives late-class circuit as the output of level shifting circuit simultaneously; Resistance R
3with resistance R
4tie point (node) O
2with the NPN triode Q of prime push-pull circuit
2collector electrode be connected, simultaneously give late-class circuit as the output of level shifting circuit.
Rear class push-pull circuit comprises resistance R
5, R
6, PMOS (P type metal-oxide-semiconductor, Q
3) and NMOS(N type metal-oxide-semiconductor, Q
4); Resistance R
5the node O of one end and level shifting circuit
1be connected, resistance R
5the other end be connected with the grid of PMOS, resistance R
6the node O of one end and level shifting circuit
2be connected, resistance R
6the other end be connected with the grid of NMOS.The source electrode of PMOS is connected with driving chip secondary positive supply, and drain electrode is as exporting O
3with the open resistance R of IGBT gate drive circuit
7be connected; The source electrode of NMOS is connected with driving chip secondary negative supply, and drain electrode is as exporting O
4with the pass resistance break R of IGBT gate drive circuit
8be connected.
Prime push-pull circuit and level shifting circuit combine, metal-oxide-semiconductor for rear class push-pull circuit provides the drive singal of interlocking, and adds hardware dead band, avoids the straight-through of metal-oxide-semiconductor push-pull configuration inside, and the GS voltage control of metal-oxide-semiconductor is within ± 20V, ensure that the reliably working of metal-oxide-semiconductor.
General principle of the present invention is: general driving chip exports the pwm signal of positive negative level, through prime push-pull circuit and level shifting circuit, be transformed into the required gate-drive level of the metal-oxide-semiconductor meeting rear class push-pull circuit, and the metal-oxide-semiconductor gate-drive level signal through converting possesses the characteristic of interlocking, and add hardware Dead Time.Rear class push-pull circuit connects by driving IGBT, is the direct push-pull cascade of IGBT gate-drive, works as Q
3when opening, by driving resistance R
7to the charging of IGBT gate pole, IGBT is open-minded, works as Q
4when opening, by driving resistance R
8there is provided discharge loop to IGBT gate pole, IGBT turns off.Rear class push-pull configuration adopts metal-oxide-semiconductor structure, adds the Schottky diode D of gate pole clamper
1, both constitute effective gate pole clamper jointly, effectively limit the short circuit current of IGBT, can reliably protecting IGBT when short circuit occurs.And during IGBT shutoff, gate pole level is stabilized in negative voltage, and the gate pole that can effectively prevent the Miller effect from causing misleads.
Course of work waveform of the present invention is shown in Fig. 7, in figure,
When output exports high level, Q
2conducting, Q
2by R
4short circuit, by Q
4gate voltage be locked in about 0V, ensure Q
4not conducting, passes through R
2, R
3dividing potential drop, ensures Q
3gS voltage be about
, higher than-20V, ensure that Q
3reliably working.Q
3conducting, V
cCpass through Q
3, R
7to the charging of IGBT gate pole, IGBT is open-minded.When output output low level, Q
1conducting, Q
1by R
2short circuit, by Q
3gate voltage be locked in about 0V, ensure Q
3not conducting, passes through R
3, R
4dividing potential drop, ensures Q
4gS voltage be about
, lower than 20V, ensure that Q
4reliably working.Q
4conducting, IGBT gate pole passes through Q
4, R
8electric discharge, IGBT turns off.When output level changes between positive and negative, triode Q
1, Q
2straight-through phenomenon can occur, and namely a pipe does not also turn off completely, and another one pipe is open-minded.For in powerful IGBT, R
7+ R
8value much smaller than R
3, i.e. Q
1, Q
2straight-through load current is much smaller than Q
3, Q
4straight-through load current, therefore, Q
1, Q
2straight-through almost the stability of a system not to be affected, Q
3, Q
4straight-through to affect greatly system reliability.Work as Q
1, Q
2when straight-through phenomenon occurs, Q
3, Q
4gate voltage is locked, Q
3, Q
4all turn off, pass through Q
1, Q
2straight-throughly ensure that Q
3, Q
4can not lead directly to, to Q
3, Q
4add hardware Dead Time.In addition, after secondary positive-negative power is added on driving chip, when system does not find PWM, it is low that driving chip exports output, then Q
1conducting, Q
4conducting, IGBT turns off.Namely, when system initially powers on, IGBT gate voltage is negative, and IGBT is blocked, and ensure that the reliability of system.
Technique effect of the present invention is as follows:
The first, rear class push-pull configuration adopts metal-oxide-semiconductor, can coordinate effective gate pole clamper, and restriction IGBT short circuit current, improves IGBT functional reliability;
The second, there is not bridge arm direct pass phenomenon in rear class push-pull configuration inside, improves entire system reliability;
3rd, rear class push-pull configuration metal-oxide-semiconductor GS absolute value of voltage, lower than 20V, improves metal-oxide-semiconductor functional reliability;
4th, drive circuit loss is less;
5th, rear class push-pull configuration metal-oxide-semiconductor GS voltage can not be subject to the impact of IGBT gate pole level, and IGBT can reliable switch.
Above technique effect solves conventional I GBT and drives the ubiquitous technical problem of push-pull configuration, improves the reliability of system largely.
Accompanying drawing explanation
Fig. 1 is triode push-pull amplifier circuit topological diagram ().
Fig. 2 is triode push-pull amplifier circuit topological diagram (two).
Fig. 3 is metal-oxide-semiconductor push-pull amplifier circuit topological diagram ().
Fig. 4 is metal-oxide-semiconductor push-pull amplifier circuit topological diagram (two).
Fig. 5 is igbt gate-drive push pull configeration schematic diagram of the present invention.
Fig. 6 is igbt gate-drive push-pull circuit figure of the present invention.
Fig. 7 is igbt gate-drive push-pull circuit course of work oscillogram of the present invention.
Fig. 8 is the typical application circuit figure of ACPL-332J.
Fig. 9 is IGBT the Miller effect schematic diagram.
Figure 10 is IGBT gate pole clamper mode one schematic diagram.
Figure 11 is IGBT gate pole clamper mode two schematic diagram.
Figure 12 is IGBT gate pole clamper mode three schematic diagram.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further details.
Fig. 5 is the structural representation of the IGBT driving push-pull circuit that the negative voltage of the effective gate pole clamper of cooperation of the present invention turns off, and is made up of driving chip, IGBT gate-drive resistance, gate-drive push-pull circuit.Described gate-drive push-pull circuit is made up of prime push-pull circuit, level shifting circuit and rear class push-pull circuit.The positive-negative power of described prime push-pull circuit, level shifting circuit and rear class push-pull circuit common drive chip secondary.The output of driving chip is connected with prime push-pull circuit, and the output of prime push-pull circuit is connected with level shifting circuit, and the output of level shifting circuit is connected with rear class push-pull circuit, and the output of rear class push-pull circuit is connected with IGBT gate-drive resistance.
Fig. 6 is a concrete exemplary circuit of the IGBT driving push-pull circuit that the negative voltage of cooperation of the present invention effective gate pole clamper turns off.Driving chip refers to secondary positive-negative power supply, the isolation drive chip that positive negative level exports, and as ACPL-332J, ACPL-T350, ACPL-316J, ADUM3223, is described for ACPL-332J.Prime push-pull circuit is primarily of resistance R
1, triode Q
1and Q
2composition, level shifting circuit is by resistance R
2, R
3, R
4composition, rear class push-pull circuit is by resistance R
5, R
6, metal-oxide-semiconductor Q
3and Q
4composition.Q
5for being driven IGBT, R
7for the open resistance of IGBT gate drive circuit, R
8for the pass resistance break of IGBT gate drive circuit, D
1for IGBT gate pole clamp diode.
In the embodiment of Fig. 6, positive supply V
cC13 pin of access ACPL-332J, negative supply V
eE9 pin of access ACPL-332J and 12 pin, driven 16 pin of the emitter access ACPL-332J of IGBT, 11 pin of ACPL-332J, as the input of prime push-pull circuit, receive resistance R
1one end, C1 and C2 is Support Capacitor, and C1 is connected between VCC and E, and C2 is connected between E and VEE, for ACPL-332J and IGBT drive circuit provide energy.Because the IGBT that focuses on of the present invention drives push-pull circuit, therefore only describe the interface pin driving optocoupler ACPL-332J and push-pull circuit, connection and the peripheral circuit of other pin do not repeat them here, and the typical application circuit of ACPL-332J is see Fig. 8.Resistance R
1the other end and triode Q
1, Q
2base stage be connected.Triode Q
1emitter and positive supply V
cCbe connected, triode Q
2emitter and negative supply V
eEbe connected.Resistance R
2one end and positive supply V
cCbe connected, the other end and resistance R
3one end be connected, this node called after O
1, resistance R
3the other end and resistance R
4one end be connected, this node called after O
2, resistance R
4the other end and negative supply V
eEbe connected.Triode Q
1collector electrode and O
1node is connected, triode Q
2collector electrode and O
2node is connected.Resistance R
5one end be connected to Q
1node, the other end and PMOS Q
3grid be connected.Resistance R
6one end be connected to O
2node, the other end and NMOS tube Q
4grid be connected.PMOS Q
3source electrode access positive supply V
cC, NMOS tube Q
4source electrode access negative supply V
eE.PMOS Q
3drain electrode be connected to the open resistance R of IGBT gate drive circuit
7one end, NMOS tube Q
4drain electrode be connected to the pass resistance break R of IGBT gate drive circuit
8one end.Q
5for being driven IGBT, D
1for IGBT gate pole clamp diode, R
7, R
8, D
1for the peripheral components that IGBT drives, not within the solution of the present invention, do not repeat them here.Other peripheral components that IGBT drives also skip at this.IGBT of the present invention drives push-pull circuit effectively can coordinate D
1carry out gate pole clamper, reach limiting short-circuit current, ensure the object of IGBT reliably working.
During normal work, driving chip output signal is PWM ripple, and high level is approximately positive supply V
cC, low level is approximately negative supply V
eE.Output is by base resistance R
1drive PNP triode Q
1with NPN triode Q
2.When output is V
cCtime, NPN triode Q
2conducting, O
2level is pulled down to close to V
eE, by resistance R
4short circuit, locking NMOS tube Q
4gS voltage make it close to 0V, then NMOS tube Q
4not open-minded; Meanwhile, PNP triode Q
1not conducting, by resistance R
3, R
5with triode Q
2to metal-oxide-semiconductor Q
3gate pole charges, and makes PMOS Q
3open-minded, as PMOS Q
3gS voltage stabilization after, (V
eE-V
cC) approximately through resistance R
2, R
3dividing potential drop, by PMOS Q
3gS voltage stabilization approximate
ensure PMOS Q
3gS voltage higher than-20V, thus ensure PMOS Q
3reliably working, Q
3conducting, then positive supply V
cCpass through Q
3with open resistance R
7to the charging of IGBT gate pole, IGBT Q
5open-minded, after IGBT gate pole is stable, GE voltage remains on approximate V
cC.When output is V
eEtime, PNP triode Q
1conducting, Q
1level is driven high close to V
cC, by resistance R
2short circuit, locking PMOS Q
3gS voltage make it close to 0V, then PMOS Q
3not open-minded; Meanwhile, NPN triode Q
2not conducting, positive supply V
cCby resistance R
3, R
6with triode Q
1to NMOS tube Q
4gate pole charges, and makes NMOS tube Q
4open-minded, as NMOS tube Q
4gS voltage stabilization after, approximately through resistance R
3, R
4dividing potential drop, by NMOS tube Q
4gS voltage stabilization approximate
, ensure NMOS tube Q
4gate voltage lower than+20V, thus ensure NMOS tube Q
4reliably working, Q
4conducting, then IGBT gate pole passes through Q
4with pass resistance break R
8take out and flow to negative supply V
eE, IGBT Q
5turn off, after IGBT gate pole is stable, GE voltage remains on approximate V
eE.
When system initially powers on, driving chip ACPL-332J former limit light-emitting diode is obstructed, secondary V
cC, V
eEelectric after, export output for approximate V
eE.According to above-mentioned analysis, now triode Q
1conducting, NMOS tube Q
4conducting, IGBT Q
5gate voltage be locked in V
eE, IGBT Q
5be blocked, turn off, system reliability is high.
When output is from V
cCchange to V
eE, triode Q
2maintain conducting, triode Q
1also can conducting, although now prime push-pull circuit brachium pontis two pipe Q
1, Q
2there occurs straight-through, but in this loop, connected resistance R
3, then load current is less, can not have an impact to power supply, also can not influential system reliability.Meanwhile, triode Q
1, Q
2open and locked metal-oxide-semiconductor Q
3, Q
4gS voltage, ensure metal-oxide-semiconductor Q
3, Q
4not conducting, thus avoid the metal-oxide-semiconductor originally certainly existed in above-mentioned metal-oxide-semiconductor push-pull configuration two to lead directly to problem.In general, IGBT drives resistance R
7+ R
8will much smaller than resistance R
3especially obvious for this difference middle high-power IGBT, so the straight-through harmfulness of rear class push-pull circuit inside is much larger than the straight-through harmfulness of prime push-pull circuit inside, the straight-through not influential system reliability of prime push-pull circuit inside, and the straight-through of rear class push-pull circuit inside has a strong impact on system reliability.Therefore push-pull circuit of the present invention can avoid the straight-through of rear class push-pull circuit, improves system reliability.
The present invention is due to rear class push-pull circuit employing metal-oxide-semiconductor push-pull configuration, and compared with traditional triode push-pull topology, in switching process, metal-oxide-semiconductor loss is less, and under stable situation, metal-oxide-semiconductor pressure drop is lower, then V
cCjust can accomplish 15V, not need to accomplish 16 ~ 17V, thus Schottky diode D can be coordinated
1carry out effective gate pole clamper, the short circuit current of restriction IGBT, improves system reliability.
In a concrete execution mode, V
cCfor 15V, V
eEfor-8V.Describe according to the above-mentioned course of work, metal-oxide-semiconductor Q
3open moment, GS voltage is about-11V, and open after stablizing, GS voltage is about-15V; Metal-oxide-semiconductor Q
4open moment, GS voltage is about+11V, and open after stablizing, GS voltage is about+15V.Visible, the GS voltage of metal-oxide-semiconductor is limited within range of safety operation ± 20V, solves the intrinsic problem of conventional MOS pipe push-pull configuration, improves system reliability.
As wherein one preferably execution mode, above-mentioned resistance R
1, R
2, R
3, R
4, R
5, R
6resistance can be respectively 56 Ω, 650 Ω, 350 Ω, 650 Ω, 650 Ω, 650 Ω.Above-mentioned triode Q
1, Q
2model can select 2SA1952,2SC5103.Above-mentioned metal-oxide-semiconductor Q
3, Q
4model can select IRFR9120NPBF, IRFR120NPBF.
The IGBT that the negative voltage of the effective gate pole clamper of cooperation of the invention described above turns off drives push-pull circuit, is the reduction utilizing the low conduction voltage drop of metal-oxide-semiconductor to realize driving power, thus coordinates diode to carry out effective gate pole clamper, restriction IGBT short circuit current size.Utilize structure and the level-conversion circuit of prime triode, the GS voltage of restriction rear class metal-oxide-semiconductor simultaneously, and lock rear class metal-oxide-semiconductor, avoid rear class to occur straight-through, ensure that metal-oxide-semiconductor is operated in reliable interval.Push-pull circuit of the present invention also possesses the characteristic of positive logic, reliably can block IGBT after system initially powers on.Therefore the present invention possesses the effective gate pole clamper of cooperation, and loss is low, avoids features such as leading directly to, the reliability of the larger system that improves.
Breaker in middle Q of the present invention
1, Q
2, Q
3, Q
4can select flexibly according to by driving IGBT, corresponding resistance is also changed thereupon, and in theory for the IGBT of any electric current, driving push-pull circuit of the present invention all can be suitable for.
Claims (2)
1. an igbt gate-drive push-pull circuit, comprises driving chip and IGBT gate drive circuit, driving chip secondary positive-negative power supply, and positive negative level exports; Also comprise prime push-pull circuit, level shifting circuit and rear class push-pull circuit; The positive-negative power of described prime push-pull circuit, level shifting circuit and rear class push-pull circuit common drive chip secondary, the output of driving chip connects the input of prime push-pull circuit, the output of prime push-pull circuit is connected with level shifting circuit, the output of level shifting circuit is connected with rear class push-pull circuit, and the output of rear class push-pull circuit is connected with IGBT gate-drive resistance;
Described prime push-pull circuit is by resistance R
1, PNP triode Q
1with NPN triode Q
2form; Resistance R
1one end is connected with driving chip output, the other end and PNP triode Q
1with NPN triode Q
2base stage be connected; PNP triode Q
1emitter be connected with positive supply, NPN triode Q
2emitter be connected with negative supply, PNP triode Q
1collector electrode give late-class circuit as output, NPN triode Q
2collector electrode give late-class circuit as another output;
It is characterized in that: described level shifting circuit is by resistance R
2, resistance R
3, resistance R
4be followed in series to form; Resistance R
2be connected with positive supply, resistance R
4be connected with negative supply; Resistance R
2with resistance R
3tie point O
1with the PNP triode Q of prime push-pull circuit
1collector electrode is connected, and gives late-class circuit as the output of level shifting circuit simultaneously; Resistance R
3with resistance R
4tie point O
2with the NPN triode Q of prime push-pull circuit
2collector electrode be connected, simultaneously give late-class circuit as the output of level shifting circuit.
2. igbt gate-drive push-pull circuit according to claim 1, is characterized in that: described rear class push-pull circuit comprises resistance R
5, resistance R
6, PMOS and NMOS; Resistance R
5the node O of one end and level shifting circuit
1be connected, resistance R
5the other end be connected with the grid of PMOS, resistance R
6the node O of one end and level shifting circuit
2be connected, resistance R
6the other end be connected with the grid of NMOS; The source electrode of PMOS is connected with driving chip secondary positive supply, and drain electrode is as exporting O
3with the open resistance R of IGBT gate drive circuit
7be connected; The source electrode of NMOS is connected with driving chip secondary negative supply, and drain electrode is as exporting O
4with the pass resistance break R of IGBT gate drive circuit
8be connected.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065497.0A CN103178694B (en) | 2013-03-01 | 2013-03-01 | Insulated gate bipolar transistor gate driving push-pull circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065497.0A CN103178694B (en) | 2013-03-01 | 2013-03-01 | Insulated gate bipolar transistor gate driving push-pull circuit |
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| Publication Number | Publication Date |
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| CN103178694A CN103178694A (en) | 2013-06-26 |
| CN103178694B true CN103178694B (en) | 2015-01-21 |
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|---|---|---|---|
| CN201310065497.0A Active CN103178694B (en) | 2013-03-01 | 2013-03-01 | Insulated gate bipolar transistor gate driving push-pull circuit |
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| CN108258887B (en) * | 2017-12-30 | 2019-07-19 | 深圳青铜剑科技股份有限公司 | Transformation of electrical energy circuit, IGBT circuit and its breaking circuit and shutdown control method |
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| CN111130532A (en) * | 2019-12-31 | 2020-05-08 | 苏州伟创电气科技股份有限公司 | IGBT gate push-pull driving circuit and method and IGBT driving circuit |
| CN112072897B (en) * | 2020-09-07 | 2022-04-12 | 中国科学院电工研究所 | Grid driving circuit of power semiconductor chip and driving method thereof |
| CN113507200B (en) * | 2021-08-20 | 2023-05-26 | 阳光电源股份有限公司 | Power converter and driving circuit thereof |
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|---|---|---|---|---|
| JP4144541B2 (en) * | 2004-03-19 | 2008-09-03 | 日産自動車株式会社 | Driver circuit for voltage-driven semiconductor device |
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| CN1968017A (en) * | 2005-11-18 | 2007-05-23 | 日产自动车株式会社 | Driver for voltage driven type switching element |
| CN102801142A (en) * | 2012-08-29 | 2012-11-28 | 深圳市英威腾电气股份有限公司 | Insulated gate bipolar transistor-driven protective circuit |
| CN203180759U (en) * | 2013-03-01 | 2013-09-04 | 南京埃斯顿自动控制技术有限公司 | Gate driving push-pull circuit of insolated gate bipolar transistor |
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| CN103178694A (en) | 2013-06-26 |
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