CN103944549A - High-reliability MOSFET drive circuit - Google Patents
High-reliability MOSFET drive circuit Download PDFInfo
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- CN103944549A CN103944549A CN201410132304.3A CN201410132304A CN103944549A CN 103944549 A CN103944549 A CN 103944549A CN 201410132304 A CN201410132304 A CN 201410132304A CN 103944549 A CN103944549 A CN 103944549A
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- 230000003071 parasitic effect Effects 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 8
- 230000005764 inhibitory process Effects 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 15
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000003990 capacitor Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 2
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
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Abstract
The invention relates to a drive circuit applied to a power switch tube MOSFET, in particular to a drive circuit of a silicon carbide MOSFET, and belongs to the technical field of drive circuits. The drive circuit aims to solve the problem that when an MOSFET in an existing drive circuit is turned off, the reliability is poor. The drive circuit comprises a PWM control circuit, a drive pulse amplifying circuit, a drive resistor Rg, a first diode D1, a resistor R1, a PNP triode Qoff, a second diode D2 and a capacitor C. According to the drive circuit, the PNP triode Qoff, the resistor R1 and the capacitor C form an MOSFET turn-off circuit; when the MOSFET is turned off quickly, a gate pole positive voltage spike caused by Miller currents is effectively suppressed; meanwhile, a gate pole negative voltage spike can also be suppressed through the second diode D2 and the capacitor C, it is guaranteed that the MOSFET is turned off safely and reliably, and the performance advantages of the silicon carbide MOSFET can be given to full play.
Description
Technical field
The present invention relates to a kind of drive circuit that is applied to power switch pipe MOSFET, relate in particular to a kind of drive circuit of silicon carbide MOSFET, belong to the drive circuit technical field in electrical engineering subject.
Background technology
The application scenario such as Aeronautics and Astronautics, electric automobile is more and more higher to the requirement of converters, and converter is constantly towards the future development of high efficiency, miniaturization and high reliability, and high frequency is one of Main Trends of The Development of current converters.Silicon device based on silicon semiconductor material is through the research of decades, and its performance has approached theoretical limit, becomes one of principal element of restriction transducer performance, and therefore the New Type Power Devices based on manufacturing silicon carbide semiconductor material arises at the historic moment.Novel silicon carbide semiconductor device is compared with silicon device, have lower conducting resistance, have higher puncture voltage, have lower knot-shell thermal resistance, working temperature limit advantages of higher, the performance advantage that makes full use of silicon carbide device is expected to meet the requirement that converters performance improves constantly.
But there are some differences because the difference of material and application scenario causes its requirement and traditional silicon MOSFET to drive circuit in silicon carbide MOSFET, specifically comprise and need to increase driving power to meet the needs of its HF switch action, when shutoff, increase auxiliary breaking circuit and suppress gate pole positive voltage spikes and mislead preventing, reduce to drive loop parasitic parameter to prevent that gate voltage undershoot from exceeding its limiting value and puncturing MOSFET etc.Shown in Fig. 1, be a kind of common MOSFET drive circuit, MOSFET turn-off time its equivalent electric circuit as shown in Figure 2, inductance L in figure
rfor the equivalent stray inductance in turn-off circuit, in the time that MOSFET turn-offs, drain-source voltage V
dscan raise fast, this voltage change ratio can act on Miller capacitance C
gdupper formation Miller electric current, the Miller electric current grid source electrode parasitic capacitance C that can flow through
gswith driving resistance R
g, equivalent stray inductance L
rthe shunt circuit of composition, because inductive current can not be undergone mutation, the Miller electric current therefore producing mainly can be to MOSFET grid source electrode parasitic capacitance C
gscharging, thus gate pole positive voltage spikes caused, there is the problem of misleading, in the time that HF switch is moved, drain-source voltage rate of change can be higher, forms larger Miller electric current, and silicon carbide MOSFET turn-on threshold voltage is lower, therefore the problem of misleading of silicon carbide MOSFET can be more serious.
Shown in Fig. 3, be by grid source electrode parasitic capacitance C
gswith driving resistance R
g, equivalent stray inductance L
rthe loop of composition, gate voltage can be by the electric discharge of loop shown in Fig. 3, grid source electrode parasitic capacitance C after producing spike
gswith stray inductance L
rmay there is resonance, form gate pole negative voltage spike, cause MOSFET grid breakdown, silicon MOSFET (20V～+ 30V) is lower relatively for silicon carbide MOSFET gate breakdown voltage (5V～+ 25V), more easily there is the problem that gate pole negative voltage spike punctures MOSFET, cause device and converter to lose efficacy.
Therefore, need to seek a kind of high reliability MOSFET drive circuit, when enough driving forces can be provided, also will ensure can effectively turn-off MOSFET in the time that HF switch is moved, avoid MOSFET to mislead or the breakdown phenomenon of grid, improve the reliability of circuit.
Summary of the invention
1, goal of the invention
The object of the invention is to overcome the lower problem of shutoff reliability that existing MOSFET drive circuit exists in high frequencyization application, a kind of active auxiliary breaking circuit is provided, suppress the generating positive and negative voltage spike that gate voltage may occur, can effectively prevent that switching tube misoperation from causing converter to break down, improve circuit reliability, for the advantage of giving full play to silicon carbide MOSFET provides safeguard, promote the further raising of transducer performance.
2, technical scheme
For reaching above-mentioned goal of the invention, high reliability MOSFET drive circuit of the present invention comprises the pwm control circuit that produces driving signal, and described control circuit is by the first DC power supply (V
cC1) power supply, the driving pulse amplifying circuit being connected with described control circuit, described driving pulse amplifying circuit is by the second DC power supply (V
cC2) power supply, in the scope allowing at MOSFET driving voltage, can suitably increase the second DC power supply (V
cC2) to reduce MOSFET conducting resistance, the driving resistance (R being connected with described driving pulse amplifying circuit
g) and resistance (R
1), drive resistance (R
g) and resistance (R
1) be connected with control circuit, the speed of opening of MOSFET can drive resistance (R by change. simultaneously
g) size regulate, turn-off speed can be by changing resistance (R
1) size regulate, this connected mode can regulate respectively opening of MOS and turn-off speed according to actual conditions, and drives resistance (R
g) that be connected is the first diode (D
1), the first diode (D
1) can in the time that turn-offing, guarantee MOSFET that turn-off circuit is by PNP triode (Q
off), electric capacity (C) and MOSFET grid source electrode parasitic capacitance composition, dwindle cut-off current loop, reduce the impact of stray inductance in circuit, be connected in resistance (R
1) the PNP triode (Q of another terminal
off), its emitter and the first diode (D
1) and the second diode (D
2) negative electrode be connected, with PNP triode (Q
off) the connected electric capacity (C) of collector electrode, PNP triode (Q
off), resistance (R
1) and electric capacity (C) formed drive circuit gate pole positive voltage spikes suppress circuit, the impact of the Miller electric current having produced by Miller capacitance while effectively having suppressed MOSFET shutoff on gate voltage, prevent the MOSFET problem that misleads, by the second diode (D
2) and electric capacity (C) formed drive circuit gate pole negative voltage spike and suppressed circuit, there is vibration while there is negative pressure in gate voltage, the second diode (D
2) conducting, make electric capacity (C) in parallel with MOSFET grid source electrode parasitic capacitance, realize the inhibition to negative voltage spike, realize safe shutdown.
Described driving pulse amplifying circuit can be the totem-pote circuit being made up of N-type MOSFET and P type MOSFET, N-type MOSFET drain electrode and the second DC power supply (V
cC2) be connected, N-type MOSFET grid is connected as the input of driving pulse amplifying circuit with P type MOSFET grid, P type MOSFET drain electrode and the second DC power supply (V
cC2) ground terminal (GND) be connected, N-type MOSFET source electrode is connected as the output of driving pulse amplifying circuit with P type MOSFET source electrode.
Described driving pulse amplifying circuit can be special driving pulse amplifying circuit integrated chip, in the occasion that need to carry out isolation drive, can select the driving chip with isolation features, now driving circuit principle figure as shown in Figure 4, now the first DC power supply (V
cC1) ground terminal be GND1, the second DC power supply (V
cC2) ground terminal be GND2.
3, beneficial effect
Compared with existing drive circuit, high reliability MOSFET drive circuit of the present invention has improved driving force by driving pulse amplifying circuit, enough drive currents can be provided, shorten MOSFET service time, reduce switching loss, can meet the requirement of high-frequency drive, according to the difference of application scenario, driving pulse amplifying circuit can use the totem structure of non-isolation type, also can use the drive circuit integrated chip with isolation features to carry out isolation drive, simultaneously, owing to having increased auxiliary breaking circuit, reduce to drive the stray inductance in loop, reduce MOSFET gate voltage oscillation peak, effectively avoid the phenomenon that MOSFET grid is breakdown or MOSFET misleads, improve the reliability of circuit, make silicon carbide MOSFET descend reliably working at higher switching frequency (silicon MOSFET relatively).
Brief description of the drawings
Fig. 1 is a kind of common MOSFET drive circuit.
Fig. 2 forms the equivalent electric circuit of Miller electric current while being MOSFET shutoff.
Fig. 3 is that a kind of common drive circuit equivalence drives loop.
Fig. 4 is a kind of MOSFET drive circuit with isolation features.
Fig. 5 is high reliability MOSFET drive circuit of the present invention.
Fig. 6 is that gate pole positive voltage spikes of the present invention suppresses equivalent circuit.
Fig. 7 is that gate pole negative voltage spike of the present invention suppresses equivalent circuit.
Fig. 8 is that driving pulse amplifying circuit of the present invention is the special integrated drive chips instance graph of non-isolation type.
Fig. 9 is that driving pulse amplifying circuit of the present invention is the special integrated drive chips instance graph of isolated form.
Figure 10 is that driving pulse amplifying circuit of the present invention is MOSFET totem structure example figure.
Main designation in figure:
V
cC1, V
cC2: first, second DC power supply, GND1, GND2: first, second direct current seedbed terminal, GND: the first and second direct current seedbed terminals when non-isolation drive, R
g: drive resistance, R
1: transistor base resistance, D
1: the first diode, Q
off: PNP triode, Q
1, Q
2: the NPN of totem structure and PNP triode, D
2: the second diode: C: electric capacity between transistor collector and ground, C
gs: MOSFET grid source capacitance, C
gd: MOSFET grid leak electrode capacitance, C
ds: MOSFET drain-source electrode capacitance, L
r: drive loop equivalence stray inductance.
Embodiment
In order to clearly demonstrate the technical scheme in the present invention, below in conjunction with drawings and Examples, technical scheme of the present invention is further described.
Shown in Fig. 5, be a kind of high reliability MOSFET drive circuit provided by the invention, this drive circuit comprises the pwm control circuit that produces driving signal, and described control circuit is by the first DC power supply (V
cC1) power supply, the driving pulse amplifying circuit being connected with described control circuit, described driving pulse amplifying circuit is by the second DC power supply (V
cC2) power supply, in the scope allowing at MOSFET driving voltage, can suitably increase the second DC power supply (V
cC2) to reduce MOSFET conducting resistance, driving pulse amplifying circuit can use the totem structure of non-isolation type, as the totem-pote circuit being formed by N-type MOSFET and P type MOSFET, also can use the drive circuit integrated chip with isolation features to carry out isolation drive, what be connected with described driving pulse amplifying circuit is to drive resistance (R
g) and resistance (R
1), drive resistance (R
g) and resistance (R
1) be connected with control circuit, drive resistance (R by change. simultaneously
g) large I change drive current peak value, thereby the speed of opening of MOSFET is regulated, by changing resistance (R
1) size can control PNP triode (Q
off) base current, thereby change collector current, MOSFET turn-off speed is regulated, this connected mode can regulate respectively opening of MOS and turn-off speed according to actual conditions, with driving resistance (R
g) the first connected diode (D
1), the first diode (D
1) can in the time that turn-offing, guarantee MOSFET that turn-off circuit is by PNP triode (Q
off), electric capacity (C) and MOSFET grid source electrode parasitic capacitance composition, dwindle cut-off current loop, reduce the impact of stray inductance in circuit, gate pole positive voltage spikes suppresses equivalent circuit as shown in Figure 6, in the time that MOSFET turn-offs, drain-source voltage V
dscan raise fast, this voltage change ratio can act on Miller capacitance C
gdupper formation Miller electric current, Miller size of current is: I
dg=C
gd(dV
ds/ dt), this Miller electric current is to MOSFET grid source electrode parasitic capacitance C
gswhen charging, can make PNP triode (Q
off) also conducting, simultaneously to electric capacity (C) charging, therefore can play the effect that suppresses gate pole positive voltage spikes, prevent the MOSFET problem that misleads, especially realize reliable turn-off in silicon carbide MOSFET frequency applications occasion.
In bridge arm topological application, lower pipe shutdown moment can make the Miller electric current producing in pipe to its grid source capacitance charging, forms gate pole negative voltage spike, Figure 7 shows that by the second diode (D
2) and electric capacity (C) formed drive circuit gate pole negative voltage spike and suppressed circuit, there is vibration while there is negative pressure in gate voltage, the second diode (D
2) conducting, make electric capacity (C) in parallel with MOSFET grid source electrode parasitic capacitance, realize the inhibition to negative voltage spike.
Figure 8 shows that the instance graph that driving pulse amplifying circuit is realized by the special integrated drive chips of non-isolation type, as IXDN609 etc.This driving chip output drive signal and input control signal same-phase, and the peak current of 9A can be provided, especially, in the time that silicon carbide MOSFET HF switch is moved, can accelerate to open speed, reduce turn-on consumption.
Figure 9 shows that the instance graph that driving pulse amplifying circuit is realized by the special integrated drive chips of isolated form, as BM6104 etc.This driving chip can be realized output drive signal and input control signal same-phase or antiphase; and there is fault-signal output, the protection of chip power supply line under-voltage, short circuit guarantor function; chip carries the isolation of magnetic coupling and negative pressure drives function; there is Miller clamp function simultaneously, can prevent the gate voltage rising situation causing due to Miller electric current.
Figure 10 driving pulse amplifying circuit is N-type MOSFET (Q
1) and P type MOSFET (Q
2) form totem structure example figure.N-type MOSFET drain electrode and the second DC power supply (V
cC2) be connected, N-type MOSFET grid is connected as the input of driving pulse amplifying circuit with P type MOSFET grid, P type MOSFET drain electrode and the second DC power supply (V
cC2) ground terminal be connected, N-type MOSFET source electrode is connected as the output of driving pulse amplifying circuit with P type MOSFET source electrode.When driving pulse amplifying circuit is high level, Q
1conducting, Q
2turn-off, driving pulse amplifying circuit output voltage is by the second DC power supply (V
cC2) determine, in the time that driving pulse amplifying circuit is low level, Q
1turn-off Q
2conducting, driving pulse amplification circuit output end meets the second DC power supply (V
cC2) ground terminal, this totem-pote circuit can be realized output drive signal and input control signal same-phase, and can provide enough pulse current to ensure to open speed, thereby reduces turn-on consumption.
High reliability MOSFET drive circuit of the present invention has improved driving force by driving pulse amplifying circuit, enough drive currents can be provided, accelerate MOSFET opening process, can meet the requirement of high-frequency drive application, according to the difference of application scenario, driving pulse amplifying circuit can use non-isolation type or isolated form structure, simultaneously owing to having increased auxiliary breaking circuit, can effectively suppress gate voltage spike, avoid the phenomenon that MOSFET grid is breakdown or MOSFET misleads, improve the reliability of circuit, can fully meet the driving requirement of silicon carbide MOSFET, bring into play its performance advantage.
Claims (7)
1. the present invention relates to a kind of high reliability MOSFET drive circuit, comprise and produce the pwm control circuit that drives signal, described control circuit is by the first DC power supply (V
cC1) power supply, the driving pulse amplifying circuit being connected with described control circuit, described driving pulse amplifying circuit is by the second DC power supply (V
cC2) power supply, the driving resistance (R being connected with described driving pulse amplifying circuit
g) and resistance (R
1), with driving resistance (R
g) the first connected diode (D
1), be connected in resistance (R
1) the PNP triode (Q of another terminal
off), its emitter and the first diode (D
1) and the second diode (D
2) negative electrode be connected, with PNP triode (Q
off) the connected electric capacity (C) of collector electrode, it is characterized in that: the breaking circuit of MOSFET is by PNP triode (Q
off), resistance (R
1), the second diode (D
2) and electric capacity (C) composition.
2. high reliability MOSFET drive circuit according to claim 1, is characterized in that: described driving pulse amplifying circuit can be special drive circuit integrated chip.
3. high reliability MOSFET drive circuit according to claim 1, is characterized in that: described driving pulse amplifying circuit can be the totem-pote circuit being made up of N-type MOSFET and P type MOSFET.
4. high reliability MOSFET drive circuit according to claim 1, is characterized in that: drive resistance (R
g) and MOSFET grid between be connected with the first diode (D
1), in the time that turn-offing, guarantees MOSFET that turn-off circuit is by PNP triode (Q
off), electric capacity (C) and MOSFET grid source electrode parasitic capacitance composition.
5. high reliability MOSFET drive circuit according to claim 1, is characterized in that: drive resistance (R
g) and resistance (R
1) be connected with control circuit, the speed of opening of MOSFET can drive resistance (R by change. simultaneously
g) size regulate, turn-off speed can be by changing resistance (R
1) size regulate, this connected mode can regulate respectively opening of MOSFET and turn-off speed according to actual conditions.
6. high reliability MOSFET drive circuit according to claim 1, is characterized in that: by PNP triode (Q
off), resistance (R
1) and electric capacity (C) formed drive circuit gate pole positive voltage spikes suppress circuit, the impact of the Miller electric current having produced in Miller capacitance while effectively having suppressed MOSFET shutoff on gate voltage, prevent the MOSFET problem that misleads, realize reliable turn-off.
7. high reliability MOSFET drive circuit according to claim 1, is characterized in that: by the second diode (D
2) and electric capacity (C) formed drive circuit gate pole negative voltage spike and suppressed circuit, there is vibration while there is negative pressure in gate voltage, the second diode (D
2) conducting, make electric capacity (C) in parallel with MOSFET grid source electrode parasitic capacitance, realize the inhibition to negative voltage spike.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410132304.3A CN103944549A (en) | 2014-04-03 | 2014-04-03 | High-reliability MOSFET drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410132304.3A CN103944549A (en) | 2014-04-03 | 2014-04-03 | High-reliability MOSFET drive circuit |
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| Publication Number | Publication Date |
|---|---|
| CN103944549A true CN103944549A (en) | 2014-07-23 |
Family
ID=51192067
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|---|---|---|---|
| CN201410132304.3A Pending CN103944549A (en) | 2014-04-03 | 2014-04-03 | High-reliability MOSFET drive circuit |
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