CN106094576A - Driving control circuit based on IGBT shaping - Google Patents
Driving control circuit based on IGBT shaping Download PDFInfo
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- CN106094576A CN106094576A CN201610159506.6A CN201610159506A CN106094576A CN 106094576 A CN106094576 A CN 106094576A CN 201610159506 A CN201610159506 A CN 201610159506A CN 106094576 A CN106094576 A CN 106094576A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
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Abstract
The invention discloses a kind of driving control circuit based on IGBT shaping, wherein, including: a pulse-generating circuit and a totem-pote circuit connect, and described totem-pote circuit is connected with one drive circuit, and being connected between described totem-pote circuit with described drive circuit has a pulse transformer.The present invention uses pulse transformer direct drive mode, effectively reduce circuit complexity and cost, actuating speed is fast, power without external power supply, and utilize pulse transformer self-induced e.m.f to make during IGBT gate turn-off to be in backward voltage state, ensure IGBT reliable turn-off, thus improve the Stability and dependability of circuit.
Description
Technical field
The present invention relates to a kind of control circuit, particularly relate to a kind of driving control circuit based on IGBT shaping.
Background technology
IGBT(insulated gate bipolar transistor) it is by BJT (double pole triode) and MOS (insulating gate type field effect tube)
The compound full-control type voltage driven type power semiconductor of composition, the advantage with MOSFET and GTR, high input impedance, open
Pass speed is fast, Heat stability is good, on-state voltage drop height low, pressure, bears the features such as electric current is big.
At present, IGBT drives the overwhelming majority to drive and uses directly driving and isolation drive two ways.Fig. 1 is Japanese fuji
The isolation drive chip figure of company EXB series, needs independent external power supply to power and photoelectric isolating device has time delay to driving
Dynamic speed aspect is restricted.
In using conventional direct drive mode, Fig. 2 be the grid of ideally IGBT be zero voltage turn-off figure, but
In practical situation, transformator has the generation of leakage inductance, and in transformator, a coiling and the secondary coiling coefficient of coup are less than 1, transformation
Device part coiling not only transformer action, the also effect of suppression inductance, this partial inductance is referred to as " leakage inductance ".Due to grid leakage inductance
Existence can cause the generation of voltage glitch spike, but voltage glitch is too high that IGBT pipe may be caused to mislead.Thus cause
IGBT permanent damage.Isolation drive mode structure is complicated as can be seen here, circuit cost high, when breaking down, fix a breakdown
Workload drives greatly and directly Stability and dependability poor.
Summary of the invention
The invention discloses a kind of driving control circuit based on IGBT shaping, in order to solve isolation drive in prior art
Mode structure is complicated, circuit cost high, drive poor stability, reliability is low and failture evacuation difficulty is big problem.
The above-mentioned purpose of the present invention is achieved through the following technical solutions:
A kind of driving control circuit based on IGBT shaping, wherein, including: a pulse-generating circuit and a totem-pote circuit are even
Connecing, described totem-pote circuit is connected with one drive circuit, and being connected between described totem-pote circuit with described drive circuit has an arteries and veins
Rush transformator.
Driving control circuit based on IGBT shaping as above, wherein, the primary of described pulse transformer is with described
Totem-pote circuit connects, and the secondary and described drive circuit of described pulse transformer is connected.
Driving control circuit based on IGBT shaping as above, wherein, described pulse-generating circuit includes two PWM controls
Signal output part processed: one first control signal outfan, one second control signal outfan.
Driving control circuit based on IGBT shaping as above, wherein, described totem-pote circuit includes: one the oneth P
Channel field-effect pipe, one second P-channel field-effect transistor (PEFT) pipe, one first N-channel field effect transistor, one second N-channel field effect transistor, described
First P-channel field-effect transistor (PEFT) pipe, described first N-channel field effect transistor are serially connected between a power end, an earth terminal, described 2nd P
Channel field-effect pipe, described second N-channel field effect transistor are serially connected between described power end, described earth terminal, a described P ditch
The grid of road field effect transistor, the grid of described first N-channel field effect transistor connect, the grid of described second P-channel field-effect transistor (PEFT) pipe,
The grid of described second N-channel field effect transistor connects, and described first control signal outfan is connected to described first P-channel field effect
Should the grid of pipe, described first N-channel field effect transistor grid between, described second control signal outfan is connected to described
The grid of two P-channel field-effect transistor (PEFT) pipes, described second N-channel field effect transistor grid between.
Driving control circuit based on IGBT shaping as above, wherein, described drive circuit includes: one first input
End, one second input, one first outfan, one second outfan, described first input end is with described first outfan even
Connect, described second input is connected with described second outfan, and a capacitance series is second defeated with described at described first outfan
Go out between end；One diode is connected between described second input and described second outfan, one the 3rd N-channel field effect transistor
Being attempted by described diode, the grid of described 3rd N-channel field effect transistor is connected to described first input end, described second defeated
Enter between end.
Driving control circuit based on IGBT shaping as above, wherein, the primary of described pulse transformer connects respectively
It is connected between described first P-channel field-effect transistor (PEFT) pipe, described first N-channel field effect transistor, and described second P-channel field-effect transistor (PEFT)
Between pipe, described second N-channel field effect transistor.
Driving control circuit based on IGBT shaping as above, wherein, the secondary of described pulse transformer respectively with
First input end, the second input connect.
The driving method of drivings control circuit based on IGBT shaping as above, wherein, described drive circuit and
IGBT connects, and described drive circuit is opened IGBT and included:
First time period: be charged the 3rd N-channel field effect transistor with IGBT grid, IGBT grid voltage is less than threshold electricity
Pressure, moves closer to and reaches threshold voltage, and IGBT is still kept off state, emitter voltage and described first output end voltage
Identical, collector voltage is identical with described second output end voltage, and now IGBT no current flows through iC=0；
Second time period: described 3rd N-channel field effect transistor conducting, by described electric capacity, described 3rd N-channel field effect transistor with
IGBT forms loop and is charged IGBT, and IGBT is operated in linear zone, and IGBT electric current IC is determined by grid voltage uGE；Due to
IGBT electric current rises, and can produce an induction electromotive force, so uCE voltage reduces in stray inductance；
3rd time period: all proceed in IGBT at the second time period load current, described diode initially enters Reverse recovery
Stage；Load current, diode recovery current all flow through the electric current of IGBT, IGBT can form a current spike, and uCE is because of two poles
Tube voltage drop reduces further；In the 3rd time period, described diode reverse recovery process terminates, and starts IGBT from the 3rd time period
From entrance saturation region, linear zone；
4th time period: also include a miller capacitance, due to the impact of miller capacitance, IGBT enters Miller platform, grid voltage
Keep constant；Due to the decline of IGBT collection emitter voltage, gate charging current has sub-fraction electric current by miller capacitance stream
Go out, when gate charging current size with by miller capacitance flow out electric current equal time, grid voltage just will not change, IGBT enter
Miller platform；
5th time period: IGBT is fully on, and IGBT electric current is equal to load current, integrates emitter voltage as saturation voltage.
The driving method of driving control circuit based on IGBT shaping as above, wherein, described drive circuit turns off
IGBT includes:
First time period: IGBT normally, IGBT integrates emitter voltage as saturation voltage, and it is load current that IGBT flows through electric current；
Second time period: IGBT drives electric current to begin to turn off IGBT, and grid voltage begins to decline, but the electric current of IGBT and collection are penetrated
Pole tension all keeps constant；
3rd time period: IGBT enters Miller platform, and grid voltage keeps constant, and IGBT starts to be entered linear zone by saturation region,
Collection emitter voltage starts to rise rapidly, and electric current keeps constant；
4th time period: IGBT terminates Miller platform, and grid voltage begins to decline, and IGBT electric current declines rapidly, posting at circuit
Produce induced potential on raw inductance, formed and turn off spike；
5th time period: IGBT grid voltage is less than threshold voltage, IGBT electric current starts to produce hangover after dropping to certain value existing
As, IGBT collection emitter voltage returns to bus voltage value；Owing to described pulse transformer has leakage inductance, described leakage inductance and institute
Stating electric capacity parallel connection and constitute resonance circuit, make IGBT grid be pulled down to negative pressure state, it is ensured that IGBT reliable turn-off, IGBT electric current is complete
Reducing to zero, IGBT complete switches off.
In sum, owing to have employed technique scheme, the present invention solves isolation drive mode in prior art and ties
Structure is complicated, circuit cost high, drive poor stability, reliability is low and failture evacuation difficulty is big problem, by totem pole electricity
Road coordinates drive circuit to realize the control to IGBT, and the present invention uses pulse transformer direct drive mode, effectively reduces electricity
Road complexity and cost, actuating speed is fast, it is not necessary to external power supply is powered, and utilizes pulse transformer self-induced e.m.f to make IGBT grid
It is in backward voltage state during shutoff, it is ensured that IGBT reliable turn-off, thus improves the Stability and dependability of circuit.
Accompanying drawing explanation
The isolation drive chip figure of Tu1Shi Japanese fuji company EXB series；
Fig. 2 be the grid of ideally IGBT be zero voltage turn-off figure；
Fig. 3 is the circuit diagram of present invention driving based on IGBT shaping control circuit；
Fig. 4 is the schematic diagram of the opening process of present invention driving based on IGBT shaping control circuit.
Detailed description of the invention
With embodiment, the present invention is described further below in conjunction with the accompanying drawings:
Fig. 3 is the circuit diagram of present invention driving based on IGBT shaping control circuit, refers to Fig. 3, a kind of based on IGBT shaping
Driving control circuit, wherein, including: a pulse-generating circuit 1 is connected with a totem-pote circuit 2, and totem-pote circuit 2 drives with one
Galvanic electricity road 3 connects, and being connected between totem-pote circuit 2 with drive circuit 3 has a pulse transformer.
The primary of the pulse transformer of the present invention is connected with totem-pote circuit 2, the secondary of pulse transformer and drive circuit 3
Connect.
The pulse-generating circuit 1 of the present invention includes two pwm control signal outfans: one first control signal outfan,
Second control signal outfan.
The totem-pote circuit 2 of the present invention includes: one first P-channel field-effect transistor (PEFT) pipe 21,1 second P-channel field-effect transistor (PEFT) pipe 22,
One first N-channel field effect transistor 23,1 second N-channel field effect transistor 24, first P-channel field-effect transistor (PEFT) pipe the 21, first N-channel field effect
Should be serially connected between a power end, an earth terminal by pipe 23, second P-channel field-effect transistor (PEFT) pipe the 22, second N-channel field effect transistor 24 concatenates
Between power end, earth terminal, the grid of the first P-channel field-effect transistor (PEFT) pipe 21, the grid of the first N-channel field effect transistor 23 connect,
The grid of the second P-channel field-effect transistor (PEFT) pipe 22, the grid of the second N-channel field effect transistor 24 connect, and the first control signal outfan is even
It is connected between the grid of the grid of the first P-channel field-effect transistor (PEFT) pipe 21, the first N-channel field effect transistor 23, the second control signal output
End is connected between the grid of the grid of the second P-channel field-effect transistor (PEFT) pipe 22, the second N-channel field effect transistor 24.
In one embodiment of the invention: the pulse-generating circuit of the present invention can be by two-way pwm control signal:
OutA, outB are constituted, outA, outB be high level or low level signal, i.e. outA be high level, when outB is low level, the
Two P-channel field-effect transistor (PEFT) pipe the 22, first N-channel field effect transistor 23 turn on, first P-channel field-effect transistor (PEFT) pipe the 21, second N-channel field effect
Pipe 24 ends, and now second P-channel field-effect transistor (PEFT) pipe the 22, first N-channel field effect transistor 23 forms path, pulse with pulse transformer
Voltage adds to pulse transformer primary, and secondary synchronous with primary obtains opening signal, and the secondary contrary with primary is cut
Stop signal.The effect of this part is that matching voltage exports driving force with improving, and changes driving switch level.Then pass through
Pulse transformer transmission and isolation.
The drive circuit 3 of the present invention includes: a first input end, one second input, one first outfan, one second defeated
Going out end, first input end and the first outfan connect, the second input and the connection of the second outfan, an electric capacity 32 is serially connected in the
Between one outfan and the second outfan；One diode 33 is connected between the second input and the second outfan, one the 3rd N ditch
Road field effect transistor 31 is attempted by diode 33, and the grid of the 3rd N-channel field effect transistor 31 is connected to first input end, second defeated
Enter between end.
The primary of the pulse transformer of the present invention is connected to first P-channel field-effect transistor (PEFT) pipe the 21, first N-channel field effect
Between pipe 23, and between second P-channel field-effect transistor (PEFT) pipe the 22, second N-channel field effect transistor 24.
The secondary of the pulse transformer of the present invention is connected with first input end, the second input respectively.
The totem-pote circuit 2 of the present invention, drive circuit 3 all can be provided with multiple resistance.
Fig. 4 is the schematic diagram of the opening process of present invention driving based on IGBT shaping control circuit, refers to Fig. 4, drives
Galvanic electricity road 3 is connected with IGBT, and drive circuit 3 is opened IGBT and included:
First time period: be charged the 3rd N-channel field effect transistor 31 with IGBT grid, IGBT grid voltage UGE is less than door
Sill voltage, moves closer to and reaches threshold voltage, and IGBT is still kept off state, emitter voltage and the first output end voltage
Identical, collector voltage UCE and the second output end voltage are identical, and now IGBT no current flows through iC=0；
Second time period: the 3rd N-channel field effect transistor 31 turns on, by electric capacity the 32, the 3rd N-channel field effect transistor 31 and IGBT shape
Becoming loop to be charged IGBT, IGBT is operated in linear zone, and IGBT electric current IC is determined by grid voltage uGE；Due to IGBT electricity
Stream rises, and can produce an induction electromotive force, so uCE voltage reduces in stray inductance；
3rd time period: all proceed in IGBT at the second time period load current, diode 33 initially enters Reverse recovery rank
Section；Load current, diode 33 restoring current all flow through the electric current of IGBT, IGBT can form a current spike, and uCE is because of two poles
Pipe 33 pressure drop reduces further；In the 3rd time period, diode 33 reversely restoring process terminates, and starts IGBT from the 3rd time period
From entrance saturation region, linear zone；
4th time period: also include a miller capacitance 32, due to the impact of miller capacitance 32, IGBT enters Miller platform, grid
Voltage keeps constant；Due to the decline of IGBT collection emitter voltage, gate charging current has sub-fraction electric current by Miller electricity
Hold 32 outflow, when gate charging current size with by miller capacitance 32 flow out electric current equal time, grid voltage just will not change,
IGBT enters Miller platform；
5th time period: IGBT is fully on, and IGBT electric current is equal to load current, integrates emitter voltage as saturation voltage.
Drive circuit 3 turns off IGBT and includes:
First time period: IGBT normally, IGBT integrates emitter voltage as saturation voltage, and it is load current that IGBT flows through electric current；
Second time period: IGBT drives electric current to begin to turn off IGBT, and grid voltage begins to decline, but the electric current of IGBT and collection are penetrated
Pole tension all keeps constant；
3rd time period: IGBT enters Miller platform, and grid voltage keeps constant, and IGBT starts to be entered linear zone by saturation region,
Collection emitter voltage starts to rise rapidly, and electric current keeps constant；
4th time period: IGBT terminates Miller platform, and grid voltage begins to decline, and IGBT electric current declines rapidly, posting at circuit
Produce induced potential on raw inductance, formed and turn off spike；
5th time period: IGBT grid voltage is less than threshold voltage, IGBT electric current starts to produce hangover after dropping to certain value existing
As, IGBT collection emitter voltage returns to bus voltage value；Owing to pulse transformer has leakage inductance, leakage inductance is in parallel with electric capacity 32
Constituting resonance circuit, make IGBT grid be pulled down to negative pressure state, it is ensured that IGBT reliable turn-off, IGBT electric current reduces to zero completely,
IGBT complete switches off.
Claims (9)
1. a driving control circuit based on IGBT shaping, it is characterised in that including: a pulse-generating circuit and a totem pole
Circuit connects, and described totem-pote circuit is connected with one drive circuit, is connected between described totem-pote circuit with described drive circuit
There is a pulse transformer.
Driving control circuit based on IGBT shaping the most according to claim 1, it is characterised in that described pulse transformer
Primary and described totem-pote circuit be connected, the secondary and described drive circuit of described pulse transformer is connected.
Driving control circuit based on IGBT shaping the most according to claim 2, it is characterised in that described pulses generation electricity
Road includes two pwm control signal outfans: one first control signal outfan, one second control signal outfan.
Driving control circuit based on IGBT shaping the most according to claim 3, it is characterised in that described totem-pote circuit
Including: one first P-channel field-effect transistor (PEFT) pipe, one second P-channel field-effect transistor (PEFT) pipe, one first N-channel field effect transistor, one second N-channel
Field effect transistor, described first P-channel field-effect transistor (PEFT) pipe, described first N-channel field effect transistor be serially connected in a power end, an earth terminal it
Between, described second P-channel field-effect transistor (PEFT) pipe, described second N-channel field effect transistor be serially connected in described power end, described earth terminal it
Between, the grid of described first P-channel field-effect transistor (PEFT) pipe, the grid of described first N-channel field effect transistor connect, described second P-channel
The grid of field effect transistor, the grid of described second N-channel field effect transistor connect, and described first control signal outfan is connected to institute
Stating between the grid of the grid of the first P-channel field-effect transistor (PEFT) pipe, described first N-channel field effect transistor, described second control signal is defeated
Go out between the grid that end is connected to the grid of described second P-channel field-effect transistor (PEFT) pipe, described second N-channel field effect transistor.
Driving control circuit based on IGBT shaping the most according to claim 4, it is characterised in that described drive circuit bag
Include: a first input end, one second input, one first outfan, one second outfan, described first input end and described the
One outfan connects, described second input is connected with described second outfan, a capacitance series at described first outfan and
Between described second outfan；One diode is connected between described second input and described second outfan, one the 3rd N ditch
Road field effect transistor is attempted by described diode, the grid of described 3rd N-channel field effect transistor be connected to described first input end,
Between described second input.
Driving control circuit based on IGBT shaping the most according to claim 4, it is characterised in that described pulse transformer
Primary be connected between described first P-channel field-effect transistor (PEFT) pipe, described first N-channel field effect transistor, and described 2nd P
Between channel field-effect pipe, described second N-channel field effect transistor.
Driving control circuit based on IGBT shaping the most according to claim 6, it is characterised in that described pulse transformer
Secondary be connected with first input end, the second input respectively.
The driving method of driving control circuit based on IGBT shaping the most according to claim 5, it is characterised in that described
Drive circuit is connected with IGBT, and described drive circuit is opened IGBT and included:
First time period: be charged the 3rd N-channel field effect transistor with IGBT grid, IGBT grid voltage is less than threshold electricity
Pressure, moves closer to and reaches threshold voltage, and IGBT is still kept off state, emitter voltage and described first output end voltage
Identical, collector voltage is identical with described second output end voltage, and now IGBT no current flows through iC=0；
Second time period: described 3rd N-channel field effect transistor conducting, by described electric capacity, described 3rd N-channel field effect transistor with
IGBT forms loop and is charged IGBT, and IGBT is operated in linear zone, and IGBT electric current IC is determined by grid voltage uGE；Due to
IGBT electric current rises, and can produce an induction electromotive force, so uCE voltage reduces in stray inductance；
3rd time period: all proceed in IGBT at the second time period load current, described diode initially enters Reverse recovery
Stage；Load current, diode recovery current all flow through the electric current of IGBT, IGBT can form a current spike, and uCE is because of two poles
Tube voltage drop reduces further；In the 3rd time period, described diode reverse recovery process terminates, and starts IGBT from the 3rd time period
From entrance saturation region, linear zone；
4th time period: also include a miller capacitance, due to the impact of miller capacitance, IGBT enters Miller platform, grid voltage
Keep constant；Due to the decline of IGBT collection emitter voltage, gate charging current has sub-fraction electric current by miller capacitance stream
Go out, when gate charging current size with by miller capacitance flow out electric current equal time, grid voltage just will not change, IGBT enter
Miller platform；
5th time period: IGBT is fully on, and IGBT electric current is equal to load current, integrates emitter voltage as saturation voltage.
The driving method of driving control circuit based on IGBT shaping the most according to claim 8, it is characterised in that described
Drive circuit turns off IGBT and includes:
First time period: IGBT normally, IGBT integrates emitter voltage as saturation voltage, and it is load current that IGBT flows through electric current；
Second time period: IGBT drives electric current to begin to turn off IGBT, and grid voltage begins to decline, but the electric current of IGBT and collection are penetrated
Pole tension all keeps constant；
3rd time period: IGBT enters Miller platform, and grid voltage keeps constant, and IGBT starts to be entered linear zone by saturation region,
Collection emitter voltage starts to rise rapidly, and electric current keeps constant；
4th time period: IGBT terminates Miller platform, and grid voltage begins to decline, and IGBT electric current declines rapidly, posting at circuit
Produce induced potential on raw inductance, formed and turn off spike；
5th time period: IGBT grid voltage is less than threshold voltage, IGBT electric current starts to produce hangover after dropping to certain value existing
As, IGBT collection emitter voltage returns to bus voltage value；Owing to described pulse transformer has leakage inductance, described leakage inductance and institute
Stating electric capacity parallel connection and constitute resonance circuit, make IGBT grid be pulled down to negative pressure state, it is ensured that IGBT reliable turn-off, IGBT electric current is complete
Reducing to zero, IGBT complete switches off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610159506.6A CN106094576B (en) | 2016-03-21 | 2016-03-21 | Drive control circuit based on IGBT shaping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610159506.6A CN106094576B (en) | 2016-03-21 | 2016-03-21 | Drive control circuit based on IGBT shaping |
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| Publication Number | Publication Date |
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| CN106094576A true CN106094576A (en) | 2016-11-09 |
| CN106094576B CN106094576B (en) | 2020-01-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610159506.6A Active CN106094576B (en) | 2016-03-21 | 2016-03-21 | Drive control circuit based on IGBT shaping |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108666981A (en) * | 2017-03-28 | 2018-10-16 | 中国科学院上海微系统与信息技术研究所 | A kind of IGBT current foldback circuits and method |
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| CN102751977A (en) * | 2012-06-27 | 2012-10-24 | 惠州三华工业有限公司 | Bootstrap driving circuit |
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| CN204597767U (en) * | 2015-05-19 | 2015-08-26 | 厦门市爱维达电子有限公司 | A kind of transformer isolation formula drive circuit |
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| US20100013542A1 (en) * | 2008-07-18 | 2010-01-21 | Denso Corporation | Driving transistor control circuit |
| US20120112802A1 (en) * | 2008-07-18 | 2012-05-10 | Denso Corporation | Driving transistor control circuit |
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| CN106094576B (en) | 2020-01-31 |
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Inventor after: Pan Jianzhong Inventor before: Guo Shaopeng |
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