CN203933357U - A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment - Google Patents
A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment Download PDFInfo
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- CN203933357U CN203933357U CN201420252050.4U CN201420252050U CN203933357U CN 203933357 U CN203933357 U CN 203933357U CN 201420252050 U CN201420252050 U CN 201420252050U CN 203933357 U CN203933357 U CN 203933357U
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Abstract
The utility model discloses a kind of metal-oxide-semiconductor drive circuit for fast detecting equipment, particularly a kind of RC of utilization circuit theory realizes the semibridge system metal-oxide-semiconductor drive circuit that timing is turn-offed.This circuit comprises semibridge system drive circuit, protective circuit, negative pressure circuit and metal-oxide-semiconductor Q.Described semibridge system drive circuit comprises NPN type triode T1 and positive-negative-positive triode T2, current resistor R4 and R3; Described protective circuit comprises capacitor C 1 and C4, diode D and resistance R 1; Described negative pressure circuit comprises capacitor C 2, C3 and resistance R 2, R3; The grid G of described metal-oxide-semiconductor Q is connected with the negative pole of capacitor C 1, and the source S of metal-oxide-semiconductor Q is connected with resistance R 3 with the positive pole of capacitor C 3 simultaneously; This circuit structure is simple, with low cost, and the negative pressure that uses single power supply to realize power MOS pipe drives, and has improved the anti-interference of drive circuit, prevents the false triggering of disturbing wave to power MOS pipe.Ensure metal-oxide-semiconductor timing shutoff simultaneously, in the time of microprocessor fault, avoid metal-oxide-semiconductor to open for a long time and cause the excessive device infringement causing of electric current.
Description
Technical field
The utility model discloses a kind of metal-oxide-semiconductor drive circuit for fast detecting equipment, particularly a kind of charge pump principle of utilizing realizes the semibridge system high-power MOSFET negative pressure drive circuit that timing is turn-offed.
Background technology
Switching Power Supply, because volume is little, lightweight, efficiency advantages of higher, is applied more and more universal.MOSFET because switching speed is fast, easily parallel connection, required driving power be little etc., and advantage has become one of the most frequently used device for power switching of Switching Power Supply.Power MOSFET belongs to voltage-controlled device, and in the time that the voltage between its grid and source electrode exceedes threshold voltage, MOSFET will conducting.Because MOSFET exists junction capacitance, when shutoff, the unexpected rising of its drain electrode and source electrode both end voltage will produce interference voltage at grid and source electrode two ends by junction capacitance, and interference voltage ripple will cause the false triggering of MOSFET.The turn-off circuit impedance of traditional conventional complementary drive circuit is little, and turn-off speed is very fast, but it can not provide negative pressure, therefore its anti-interference is poor.Meanwhile, traditional high-frequency low-power MOSFET drive circuit, lacks MOSFET protective circuit, and when circuit breaks down, when the PWM of output is continuously high level, MOSFET, by long-time conducting, causes circuital current excessive, causes the serious problems such as circuit element infringement.
Summary of the invention
The defect and the deficiency that exist for above-mentioned prior art, the purpose of this utility model is, a kind of metal-oxide-semiconductor drive circuit for fast detecting equipment is provided, the utility model can ensure to open at switching tube instantaneous, drive circuit provides enough large charging current to make MOSFET grid voltage between source electrodes rise to rapidly desirable value, prevent the rising edge higher-order of oscillation, realize fast conducting.At blocking interval, circuit provides certain negative voltage, avoids being interfered causing metal-oxide-semiconductor to mislead simultaneously.This circuit can also be realized circuit timing and turn-off, and prevents the long-time conducting of metal-oxide-semiconductor, causes circuital current excessive, causes the serious problems such as circuit element infringement.
In order to realize above-mentioned task, the utility model adopts following technical solution:
A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment, it is characterized in that, comprise semibridge system drive circuit, protective circuit, negative pressure circuit and MOSFET pipe Q, described semibridge system drive circuit comprises NPN type triode T1 and positive-negative-positive triode T2 and current-limiting resistance R4 and resistance R 5; Described protective circuit comprises capacitor C 1 and C4, diode D and resistance R 1; Described negative pressure circuit comprises capacitor C 2, C3 and resistance R 2, R3; The grid G of described MOSFET pipe Q is connected with the negative pole of capacitor C 1, and the source S of MOSFET pipe Q is connected with resistance R 3 with the positive pole of capacitor C 3 simultaneously; Described NPN type triode T1 collector electrode C is connected with power supply V+, the emitter E of triode T1 is connected with the collector electrode C of positive-negative-positive triode T2, the base stage B of described positive-negative-positive triode T2 is connected by the signal input part of resistance R 5 and PWM, the base stage B of described triode T1 is connected by the signal input part of resistance R 4 and PWM, and the emitter E of triode T2 is connected to the ground; The emitter E of the anodal connecting triode T1 of described capacitor C 1; Described capacitor C 4 is connected on the plus earth of described diode D between power supply V+ and capacitor C 1, and the negative pole of diode D connects the negative pole of capacitor C 1; Described resistance R 1 is connected on the negative pole and two ends, ground of capacitor C 1; The positive pole of described capacitor C 2 is connected with power supply V+; The positive pole of described capacitor C 3 is connected with the negative pole of capacitor C 2, the minus earth of capacitor C 3; Described resistance R 2 is connected on the two ends of power supply V+ and resistance R 3; Described resistance R 3 is connected on the two ends on resistance R 2 and ground.
The beneficial effects of the utility model are:
When the pwm signal of microprocessor output is high level, triode T1 conducting, triode T2 cut-off, now the cathode voltage of capacitor C 1 sports high voltage, the voltage difference of capacitor C 1 positive and negative polarities is not undergone mutation, therefore the negative pole of capacitor C 1 also sports high voltage, makes the voltage between metal-oxide-semiconductor grid G and source S exceed threshold voltage, and at this moment metal-oxide-semiconductor Q is open-minded.When circuit breaks down, when PWM output is continuously high level, power supply charges to capacitor C 1 by resistance R 1, the cathode voltage of capacitor C 1 is high voltage by clamp, and cathode voltage constantly declines, until the voltage between metal-oxide-semiconductor grid G and source S is while being less than conducting valve threshold voltage, MOSFET turn-offs, this charging process is the step response of RC circuit, by choosing suitable capacitor C 1 and resistance R 1, can realize the controlled timed-shutoff break time of metal-oxide-semiconductor.
The pwm signal of microprocessor output becomes after low level, do not undergo mutation because capacitor C 1 both end voltage is poor, the instantaneous negative voltage that is reduced to of negative pole of capacitor C 1, while is due to the dividing potential drop effect of resistance R 2 and R3, make the voltage between metal-oxide-semiconductor grid G and source S become negative value, the negative pressure that has realized MOSFET drives turn-offs, and has improved the anti-interference of drive circuit, and turn-off speed, be applicable to high frequency occasion.
Circuit structure is simple, with low cost, the negative pressure that can realize MOSFET drives and timing is turn-offed, and has improved the anti-interference of drive circuit, at microprocessor in the time breaking down, prevent that metal-oxide-semiconductor is open-minded for a long time, effectively avoided that circuital current is excessive causes device infringement.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments the utility model is further explained explanation.
Fig. 1 is circuit theory diagrams.
In Fig. 1, T1 is NPN type triode, and T2 is positive-negative-positive triode, and Q is metal-oxide-semiconductor, and C1, C2, C3, C4 are that electric capacity, D are diode, and R1, R2, R3, R4, R5 are resistance.
Embodiment
In Fig. 1, the semibridge system drive circuit being formed by NPN type triode T1 and positive-negative-positive triode T2, in the time of pwm signal output high level, triode T1 conducting, triode T2 cut-off, power supply provides the junction capacitance charging of large electric current to MOSFET, makes MOSFET gate-source voltage rise to rapidly desirable value, and the higher-order of oscillation of rising edge can be opened and not exist to guarantee switching tube fast.The protective circuit being made up of capacitor C 1, diode D and resistance R 1, the self-timing that can realize MOSFET by the numerical value of Proper Match resistance R 1 and capacitor C 1 turn-offs.In the time breaking down, prevent that metal-oxide-semiconductor is open-minded for a long time at microprocessor, effectively avoided the excessive device infringement causing of circuital current.The negative pressure circuit being formed by capacitor C 2, C3 and resistance R 2, R3, when PWM output signal is low level, triode T1 cut-off, triode T2 conducting, the gate charge of metal-oxide-semiconductor discharges by T2, and simultaneously due to resistance R 2, the dividing potential drop effect of R3 to power supply, the voltage between the source grid of metal-oxide-semiconductor is for negative, realize the negative pressure of MOSFET drive circuit and turn-offed, improved the anti-interference of drive circuit.If the duty ratio of pwm signal is D, switch periods is T.In DT ON time, PWM output signal becomes high voltage, and the voltage VGS between MOSFET grid and source electrode starts constantly to reduce after becoming maximum, and the voltage of VGS is higher than the threshold voltage between the grid of MOSFET source, and metal-oxide-semiconductor Q is open-minded.
When microprocessor breaks down, when the pwm signal of output is continuously high level, VGS constantly reduces, until be reduced to its threshold voltage, can realize the automatic disconnection of metal-oxide-semiconductor Q.The turn on process of MOSFET is the step response of RC circuit, can accurately control the ON time of metal-oxide-semiconductor Q by the numerical value of rational selection capacitor C 1 and resistance R 1, and the electric current of avoiding the long-time conducting of circuit to cause is excessive, causes device infringement.At (1-D) T blocking interval, PWM output signal becomes low level, and the voltage VGS between MOSFET grid and source electrode is dropped rapidly to negative pressure, gate charge repid discharge, and the negative pressure that has realized MOSFET drives turn-offs.Due to the switch time delay of the arrangement of conductors inductance between power supply and triode T1 and T2 and its element, make drive circuit that very strong temporary impact electric current can not be provided in the time that reality is used, make the MOS SFET in major loop can not high-speed switch.Introduced capacitor C 2 and C3, the impulse current producing while utilizing it by short circuit has been accelerated the switching speed of power MOSFET for this reason.
Claims (1)
1. the metal-oxide-semiconductor drive circuit for fast detecting equipment, it is characterized in that, comprise semibridge system drive circuit, protective circuit, negative pressure circuit and MOSFET pipe Q, described semibridge system drive circuit comprises NPN type triode T1 and positive-negative-positive triode T2 and current-limiting resistance R4 and resistance R 5; Described protective circuit comprises capacitor C 1 and C4, diode D and resistance R 1; Described negative pressure circuit comprises capacitor C 2, C3 and resistance R 2, R3; The grid G of described MOSFET pipe Q is connected with the negative pole of capacitor C 1, and the source S of MOSFET pipe Q is connected with resistance R 3 with the positive pole of capacitor C 3 simultaneously; Described NPN type triode T1 collector electrode C is connected with power supply V+, the emitter E of triode T1 is connected with the collector electrode C of positive-negative-positive triode T2, the base stage B of described positive-negative-positive triode T2 is connected by the signal input part of resistance R 5 and PWM, the base stage B of described triode T1 is connected by the signal input part of resistance R 4 and PWM, and the emitter E of triode T2 is connected to the ground; The emitter E of the anodal connecting triode T1 of described capacitor C 1; Described capacitor C 4 is connected on the plus earth of described diode D between power supply V+ and capacitor C 1, and the negative pole of diode D connects the negative pole of capacitor C 1; Described resistance R 1 is connected on the negative pole and two ends, ground of capacitor C 1; The positive pole of described capacitor C 2 is connected with power supply V+; The positive pole of described capacitor C 3 is connected with the negative pole of capacitor C 2, the minus earth of capacitor C 3; Described resistance R 2 is connected on the two ends of power supply V+ and resistance R 3; Described resistance R 3 is connected on the two ends on resistance R 2 and ground.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420252050.4U CN203933357U (en) | 2014-05-17 | 2014-05-17 | A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment |
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| CN201420252050.4U CN203933357U (en) | 2014-05-17 | 2014-05-17 | A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616939A (en) * | 2015-02-06 | 2015-05-13 | 孙毅彪 | Non-arc intelligent bridge strong-controlled type high-voltage circuit breaker |
| CN105656463A (en) * | 2016-04-05 | 2016-06-08 | 深圳市莱福德光电有限公司 | Protection circuit applied to super junction MOS (metal oxide semiconductor) |
| CN111025114A (en) * | 2019-12-24 | 2020-04-17 | 福建福顺半导体制造有限公司 | Full-automatic testing arrangement of integrated circuit high frequency electric parameter characteristic |
| CN111355380A (en) * | 2020-03-30 | 2020-06-30 | 中煤科工集团重庆研究院有限公司 | Self-adaptive mining power supply with ultra-wide input voltage |
| CN111464158A (en) * | 2020-03-30 | 2020-07-28 | 中煤科工集团重庆研究院有限公司 | MOS tube pulse driving circuit |
-
2014
- 2014-05-17 CN CN201420252050.4U patent/CN203933357U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104616939A (en) * | 2015-02-06 | 2015-05-13 | 孙毅彪 | Non-arc intelligent bridge strong-controlled type high-voltage circuit breaker |
| CN105656463A (en) * | 2016-04-05 | 2016-06-08 | 深圳市莱福德光电有限公司 | Protection circuit applied to super junction MOS (metal oxide semiconductor) |
| CN105656463B (en) * | 2016-04-05 | 2023-08-15 | 深圳市莱福德光电有限公司 | Protection circuit for super-junction MOS application |
| CN111025114A (en) * | 2019-12-24 | 2020-04-17 | 福建福顺半导体制造有限公司 | Full-automatic testing arrangement of integrated circuit high frequency electric parameter characteristic |
| CN111025114B (en) * | 2019-12-24 | 2021-10-19 | 福建福顺半导体制造有限公司 | Full-automatic testing arrangement of integrated circuit high frequency electric parameter characteristic |
| CN111355380A (en) * | 2020-03-30 | 2020-06-30 | 中煤科工集团重庆研究院有限公司 | Self-adaptive mining power supply with ultra-wide input voltage |
| CN111464158A (en) * | 2020-03-30 | 2020-07-28 | 中煤科工集团重庆研究院有限公司 | MOS tube pulse driving circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Xu Yunpeng Inventor after: Wang Shan Inventor before: Xu Yunpeng |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XU YUNPENG TO: XU YUNPENG WANG SHAN |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20150517 |
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| EXPY | Termination of patent right or utility model |