CN203933358U - A kind of field effect transistor drive circuit for high frequency low voltage system - Google Patents
A kind of field effect transistor drive circuit for high frequency low voltage system Download PDFInfo
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- CN203933358U CN203933358U CN201420252052.3U CN201420252052U CN203933358U CN 203933358 U CN203933358 U CN 203933358U CN 201420252052 U CN201420252052 U CN 201420252052U CN 203933358 U CN203933358 U CN 203933358U
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Abstract
The utility model discloses a kind of field effect transistor drive circuit for high frequency low voltage system, comprise voltage stabilizing circuit, control circuit, protective circuit and metal-oxide-semiconductor Q2, described voltage stabilizing circuit is comprised of voltage stabilizing didoe D1 and current-limiting resistance R1; Described control circuit is comprised of diode D2, voltage-stabiliser tube D3, metal-oxide-semiconductor Q1, capacitor C 1 and C2 and grid input resistance R3; Described protective circuit is comprised of current-limiting resistance R2 and filter capacitor C3.This driving circuit structure is simple, with low cost, can when driving voltage finishes, produce negative pressure and turn-off fast metal-oxide-semiconductor, is applicable to the occasion that high frequency and circuit anti-interference are had relatively high expectations.
Description
Technical field
The utility model belongs to power electronics and drives applied technical field, relates in particular to a kind of field effect transistor drive circuit for high frequency low voltage system, the occasion that this circuit is applicable to high frequency and circuit anti-interference is had relatively high expectations.
Background technology
Development along with power semiconductor device, power field effect transistor has become device the most frequently used in Switching Power Supply, due to advantages such as its switching speed is fast, driving power is little, easy parallel connections, the occasion that is widely used in high frequency, middle low power, is especially providing in the low-voltage, high-current Switching Power Supply of energy for communication electronic equipments such as computer, switch, the webservers.
At present, the switching frequency that voltage source drives has surpassed 1MHz, but the too high meeting of switching frequency causes series of problems, the Main Bottleneck that wherein hinders the raising of voltage source driving switch frequency is exactly that the loss of switching device turn-on and turn-off process is, the loss of the loss of gate-drive and switching device output capacitance, than traditional drive circuit, high frequency negative pressure drives in the process that can disconnect at switch and turn-offs fast metal-oxide-semiconductor with minus negative pressure, reduce the circuit loss of high frequency, improve the anti-interference of drive circuit, solve foregoing circuit problem.
Summary of the invention
The defect and the deficiency that for above-mentioned prior art, exist, the purpose of this utility model is, a kind of field effect transistor drive circuit for high frequency low voltage system is provided, circuit of the present utility model has been accelerated the switching speed of metal-oxide-semiconductor, improve the antijamming capability of drive circuit, effectively prevented misleading of switching device.
In order to realize above-mentioned task, the utility model adopts following technical solution:
A kind of field effect transistor drive circuit for high frequency low voltage system, comprise voltage stabilizing circuit, control circuit, protective circuit and metal-oxide-semiconductor Q2, described voltage stabilizing circuit is comprised of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of described voltage stabilizing didoe D1 is connected with driving voltage Vg, and described current-limiting resistance R1 is connected on the two ends of D1 positive pole and described metal-oxide-semiconductor Q1 source electrode; Described control circuit is comprised of diode D2, voltage-stabiliser tube D3, metal-oxide-semiconductor Q1, capacitor C 1 and C2 and grid input resistance R3, the positive pole of described diode D2 is connected with driving voltage Vg, the negative pole of diode D2 is connected with the drain electrode of described metal-oxide-semiconductor Q1 with the positive pole of described capacitor C 2 simultaneously, the positive pole of described voltage-stabiliser tube D3 is connected with the negative pole of capacitor C 2, described capacitor C 1 is connected between the grid and source electrode of metal-oxide-semiconductor Q1, and described grid input resistance R3 is connected with the grid of metal-oxide-semiconductor Q1; Described grid input resistance R2 is connected on the two ends of capacitor C 1 negative pole and metal-oxide-semiconductor Q grid; Described protective circuit is comprised of current-limiting resistance R2 and filter capacitor C3, and described resistance R 2 is connected between the negative pole of capacitor C 2 and the grid of metal-oxide-semiconductor Q2, and described capacitor C 3 is connected between the source electrode and grid of metal-oxide-semiconductor Q2; The described metal-oxide-semiconductor Q1Wei IPG20N06 of Infineon type, the metal-oxide-semiconductor Q2Wei IPD50N03 of Infineon type.
The beneficial effects of the utility model are: the voltage stabilizing circuit being directly connected with driving voltage, positive voltage is shaken to the magnitude of voltage that spike is limited in voltage stabilizing circuit two ends when driving voltage is positive voltage, when driving voltage is zero, voltage of voltage regulation road is capacitor C 1 charging by conducting, and current-limiting resistance R1 is used for preventing that circuital current is excessive; When driving voltage is zero, control circuit produces negative voltage between the gate pole of metal-oxide-semiconductor Q and grid, diode D2 can prevent reverse direction current flow, capacitor C 1 utilizes charge pump principle when cathode voltage sports zero, to produce negative pressure, parallel voltage-stabilizing diode D3 guarantees that electric capacity both end voltage is stable, metal-oxide-semiconductor Q1 is used for providing passage for producing negative pressure, and resistance R 2 guarantees the discharge time of charge pump; Resistance R 3 in protective circuit is connected between the grid and drain electrode of metal-oxide-semiconductor Q1; prevent electrostatic breakdown; little capacitor C 2 strobes; reduce the distortion phenomenon on edge, driving pulse front and back; the effect of diode D4 is to provide Low ESR discharge channel to the parasitic input capacitance of metal-oxide-semiconductor 1 grid; the electric discharge of acceleration input capacitance, thus accelerate the shutoff of metal-oxide-semiconductor 1.
This driving circuit structure is simple, with low cost, can when driving voltage finishes, produce negative pressure and turn-off fast metal-oxide-semiconductor, is applicable to high frequency and and the circuit anti-interference occasion of having relatively high expectations.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments the utility model is further explained explanation.
Fig. 1 is the field effect transistor driving circuit principle figure of high frequency low voltage system;
In Fig. 1, Q1, Q2 are metal-oxide-semiconductor, and C1, C2, C3 are that electric capacity, D1, D and D3 are diode, and R1, R2, R3 are resistance.
Embodiment
Fig. 1 is the field effect transistor driving circuit principle figure of high frequency low voltage system, this field effect transistor drive circuit, comprise voltage stabilizing circuit, control circuit, protective circuit and metal-oxide-semiconductor Q2, described voltage stabilizing circuit is comprised of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of described voltage stabilizing didoe D1 is connected with driving voltage Vg, and described current-limiting resistance R1 is connected on the two ends of D1 positive pole and described metal-oxide-semiconductor Q1 source electrode; Described control circuit is comprised of diode D2, voltage-stabiliser tube D3, metal-oxide-semiconductor Q1, capacitor C 1 and C2 and grid input resistance R3, the positive pole of described diode D2 is connected with driving voltage Vg, the negative pole of diode D2 is connected with the drain electrode of described metal-oxide-semiconductor Q1 with the positive pole of described capacitor C 2 simultaneously, the positive pole of described voltage-stabiliser tube D3 is connected with the negative pole of capacitor C 2, described capacitor C 1 is connected between the grid and source electrode of metal-oxide-semiconductor Q1, and described grid input resistance R3 is connected with the grid of metal-oxide-semiconductor Q1; Described grid input resistance R2 is connected on the two ends of capacitor C 1 negative pole and metal-oxide-semiconductor Q grid; Described protective circuit is comprised of current-limiting resistance R2 and filter capacitor C3, and described resistance R 2 is connected between the negative pole of capacitor C 2 and the grid of metal-oxide-semiconductor Q2, and described capacitor C 3 is connected between the source electrode and grid of metal-oxide-semiconductor Q2; The described metal-oxide-semiconductor Q1Wei IPG20N06 of Infineon type, the metal-oxide-semiconductor Q2Wei IPD50N03 of Infineon type.
Except above-mentioned, general technical staff of the technical field of the invention also can understand, in this explanation and illustrated specific embodiment, can further change combination.For example, Infineon's field effect transistor can be replaced by the metal-oxide-semiconductor of other types according to actual condition.
Claims (2)
1. the field effect transistor drive circuit for high frequency low voltage system, it is characterized in that, comprise voltage stabilizing circuit, control circuit, protective circuit and metal-oxide-semiconductor Q2, described voltage stabilizing circuit is comprised of voltage stabilizing didoe D1 and current-limiting resistance R1, the negative pole of described voltage stabilizing didoe D1 is connected with driving voltage Vg, and described current-limiting resistance R1 is connected on the two ends of D1 positive pole and described metal-oxide-semiconductor Q1 source electrode; Described control circuit is comprised of diode D2, voltage-stabiliser tube D3, metal-oxide-semiconductor Q1, capacitor C 1 and C2 and grid input resistance R3, the positive pole of described diode D2 is connected with driving voltage Vg, the negative pole of diode D2 is connected with the drain electrode of described metal-oxide-semiconductor Q1 with the positive pole of described capacitor C 2 simultaneously, the positive pole of described voltage-stabiliser tube D3 is connected with the negative pole of capacitor C 2, described capacitor C 1 is connected between the grid and source electrode of metal-oxide-semiconductor Q1, and described grid input resistance R3 is connected with the grid of metal-oxide-semiconductor Q1; Described grid input resistance R2 is connected on the two ends of capacitor C 1 negative pole and metal-oxide-semiconductor Q grid; Described protective circuit is comprised of current-limiting resistance R2 and filter capacitor C3, and described resistance R 2 is connected between the negative pole of capacitor C 2 and the grid of metal-oxide-semiconductor Q2, and described capacitor C 3 is connected between the source electrode and grid of metal-oxide-semiconductor Q2.
2. a kind of field effect transistor drive circuit for high frequency low voltage system as claimed in claim 1, is characterized in that, the described metal-oxide-semiconductor Q1Wei IPG20N06 of Infineon type, the metal-oxide-semiconductor Q2Wei IPD50N03 of Infineon type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420252052.3U CN203933358U (en) | 2014-05-17 | 2014-05-17 | A kind of field effect transistor drive circuit for high frequency low voltage system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420252052.3U CN203933358U (en) | 2014-05-17 | 2014-05-17 | A kind of field effect transistor drive circuit for high frequency low voltage system |
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| CN203933358U true CN203933358U (en) | 2014-11-05 |
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| CN201420252052.3U Expired - Fee Related CN203933358U (en) | 2014-05-17 | 2014-05-17 | A kind of field effect transistor drive circuit for high frequency low voltage system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130320A (en) * | 2016-08-30 | 2016-11-16 | 苏州泰思特电子科技有限公司 | Supper-fast MOSFET electrical switch drive circuit |
| CN107276564A (en) * | 2017-06-07 | 2017-10-20 | 北京新能源汽车股份有限公司 | A kind of drive circuit and automobile |
| CN107809830A (en) * | 2017-12-06 | 2018-03-16 | 无锡恒芯微科技有限公司 | A kind of Buck boost LED drive circuits |
| CN111355380A (en) * | 2020-03-30 | 2020-06-30 | 中煤科工集团重庆研究院有限公司 | Self-adaptive mining power supply with ultra-wide input voltage |
-
2014
- 2014-05-17 CN CN201420252052.3U patent/CN203933358U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130320A (en) * | 2016-08-30 | 2016-11-16 | 苏州泰思特电子科技有限公司 | Supper-fast MOSFET electrical switch drive circuit |
| CN106130320B (en) * | 2016-08-30 | 2019-06-14 | 苏州泰思特电子科技有限公司 | Supper-fast MOSFET electronic switch driving circuit |
| CN107276564A (en) * | 2017-06-07 | 2017-10-20 | 北京新能源汽车股份有限公司 | A kind of drive circuit and automobile |
| CN107809830A (en) * | 2017-12-06 | 2018-03-16 | 无锡恒芯微科技有限公司 | A kind of Buck boost LED drive circuits |
| CN107809830B (en) * | 2017-12-06 | 2024-05-24 | 无锡恒芯微科技有限公司 | Buck-boost LED drive circuit |
| CN111355380A (en) * | 2020-03-30 | 2020-06-30 | 中煤科工集团重庆研究院有限公司 | Self-adaptive mining power supply with ultra-wide input voltage |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Xu Yunpeng Inventor after: Wang Shan Inventor before: Xu Yunpeng |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XU YUNPENG TO: XU YUNPENG WANG SHAN |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20150517 |
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| EXPY | Termination of patent right or utility model |