CN204089759U - High-frequency power device switch protecting circuit - Google Patents
High-frequency power device switch protecting circuit Download PDFInfo
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- CN204089759U CN204089759U CN201420522115.2U CN201420522115U CN204089759U CN 204089759 U CN204089759 U CN 204089759U CN 201420522115 U CN201420522115 U CN 201420522115U CN 204089759 U CN204089759 U CN 204089759U
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Abstract
High-frequency power device switch protecting circuit, relates to electricity field, the metal-oxide-semiconductor driver element specifically comprising protected location and be connected with protected location; Compared with prior art; the technical solution of the utility model achieves high-frequency power device switch and is achieving protecting by week in each PWM significant level; and the utility model is also to high-frequency power device switch-linear hybrid metal-oxide-semiconductor negative pressure drive circuit; response fast can be carried out to metal-oxide-semiconductor by metal-oxide-semiconductor negative pressure drive circuit close and realize driving protection to metal-oxide-semiconductor, improve fail safe and the useful life of whole circuit.
Description
Technical field
The utility model relates to electricity field, is specially high-frequency power device switch protecting circuit.
Background technology
In the application of power device; very important to the protection of overload and load short circuits; owing to lacking, protective circuit or protective circuit cause not in time often for the damage of some equipment; although some application-specific integrated circuit (ASIC) is integrated with certain defencive function, often Protection parameters is single can not realize designer's intention easily.And not using the scheme possessing defencive function integrated circuit, then power device is in the state of running nakedly, and faces the damage under fortuitous event at any time.Even if having a mind to independent design protection circuit, often circuit relative complex, cost is also corresponding higher.Along with the development of power semiconductor device, power field effect transistor has become device the most frequently used in power device Switching Power Supply, due to advantages such as its switching speed is fast, driving power is little, easy parallel connections, is widely used in the occasion of high frequency, middle low power.At present, the switching frequency that voltage source drives is more than 1MHz, but the too high meeting of switching frequency causes series of problems, the Main Bottleneck wherein hindering voltage source driving switch frequency to improve is exactly the loss of the loss of switch device conductive and turn off process, the loss of gate-drive and switching device output capacitance; For addressing these problems, need a kind of new circuit structure badly to realize the switch protection of high-frequency power device.
Utility model content
The purpose of this utility model is to provide a kind of high-frequency power device switch protecting circuit, to solve the problem in background technology.
For achieving the above object, the utility model provides following technical scheme:
High-frequency power device switch protecting circuit, the metal-oxide-semiconductor driver element comprising protected location and be connected with protected location, described protected location comprises resistance R1, PNP type triode Q1, NPN type triode Q2, resistance R2 and resistance R5, and wherein, one end of R1 is connected with the emitter of triode Q1, and the other end of resistance R1 is connected with the collector electrode of the base stage of triode Q1, triode Q2, the grounded emitter of triode Q2, the base stage of triode Q2 is connected with the collector electrode of triode Q1 and resistance R2, resistance R5 one end ground connection, and the other end is connected with resistance R2 one end to hold and is connected, described metal-oxide-semiconductor negative pressure drive circuit comprises: voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor VT, described voltage stabilizing circuit is made up of voltage stabilizing didoe VD1 and current-limiting resistance R4, the negative pole of voltage stabilizing didoe VD1 is connected with the resistance R1 in described protected location, and described resistance R2 is connected on the two ends of VD1 positive pole and described metal-oxide-semiconductor VT source electrode, described negative pressure circuit is by diode VD2, voltage-stabiliser tube VD4, triode Q3, electric capacity C1 and grid input resistance R4 forms, the positive pole of described diode VD2 is connected with the intersection point of triode Q2 collector electrode with triode Q1 base stage in the collector electrode of triode Q2 in current-limiting control circuit and protected location, the negative pole of diode VD2 is connected with the negative pole of described voltage-stabiliser tube V4 with the positive pole of described electric capacity C1 simultaneously, the positive pole of described voltage-stabiliser tube VD4 is connected with the negative pole of electric capacity C1, the base stage of described triode Q3 is connected with the positive pole of diode VD2, the collector electrode of triode Q3 is connected with the positive pole of electric capacity C1, the emitter of triode Q3 to be connected between resistance R2 and R5 and to be connected with the source electrode of described metal-oxide-semiconductor VT, the grid input resistance R4 of described metal-oxide-semiconductor VT is connected on the two ends of electric capacity C1 negative pole and metal-oxide-semiconductor VT grid, described protective circuit is made up of diode VD3, protective resistance R4 and filter capacitor C2, the positive pole of described diode VD3 is connected with the grid of metal-oxide-semiconductor VT, the negative pole of diode VD3 is connected with the positive pole of electric capacity C1, between the grid that described protective resistance R4 is connected on metal-oxide-semiconductor VT and gate pole, described filter capacitor C2 is in parallel with resistance R3.
Further, described triode Q1 is PNP type triode.
Further, described triode Q2 is NPN type triode.
Further, described triode Q3 is PNP type triode.
Compared with prior art; the technical solution of the utility model achieves high-frequency power device switch and is achieving protecting by week in each PWM significant level; and the utility model is also to high-frequency power device switch-linear hybrid metal-oxide-semiconductor negative pressure drive circuit; response fast can be carried out to metal-oxide-semiconductor by metal-oxide-semiconductor negative pressure drive circuit close and realize driving protection to metal-oxide-semiconductor, improve fail safe and the useful life of whole circuit.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
The technological means realized to make the utility model, creation characteristic, reaching object and effect is easy to understand, below in conjunction with concrete diagram, setting forth the utility model further.
High-frequency power device switch protecting circuit as shown in Figure 1, the metal-oxide-semiconductor driver element comprising protected location and be connected with protected location, described protected location comprises resistance R1, PNP type triode Q1, NPN type triode Q2, resistance R2 and resistance R5, and wherein, one end of R1 is connected with the emitter of triode Q1, and the other end of resistance R1 is connected with the collector electrode of the base stage of triode Q1, triode Q2, the grounded emitter of triode Q2, the base stage of triode Q2 is connected with the collector electrode of triode Q1 and resistance R2, resistance R5 one end ground connection, and the other end is connected with resistance R2 one end to hold and is connected, described metal-oxide-semiconductor negative pressure drive circuit comprises: voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor VT, described voltage stabilizing circuit is made up of voltage stabilizing didoe VD1 and current-limiting resistance R4, the negative pole of voltage stabilizing didoe VD1 is connected with the resistance R1 in described protected location, and described resistance R2 is connected on the two ends of VD1 positive pole and described metal-oxide-semiconductor VT source electrode, described negative pressure circuit is by diode VD2, voltage-stabiliser tube VD4, triode Q3, electric capacity C1 and grid input resistance R4 forms, the positive pole of described diode VD2 is connected with the intersection point of triode Q2 collector electrode with triode Q1 base stage in the collector electrode of triode Q2 in current-limiting control circuit and protected location, the negative pole of diode VD2 is connected with the negative pole of described voltage-stabiliser tube V4 with the positive pole of described electric capacity C1 simultaneously, the positive pole of described voltage-stabiliser tube VD4 is connected with the negative pole of electric capacity C1, the base stage of described triode Q3 is connected with the positive pole of diode VD2, the collector electrode of triode Q3 is connected with the positive pole of electric capacity C1, the emitter of triode Q3 to be connected between resistance R2 and R5 and to be connected with the source electrode of described metal-oxide-semiconductor VT, the grid input resistance R4 of described metal-oxide-semiconductor VT is connected on the two ends of electric capacity C1 negative pole and metal-oxide-semiconductor VT grid, described protective circuit is made up of diode VD3, protective resistance R4 and filter capacitor C2, the positive pole of described diode VD3 is connected with the grid of metal-oxide-semiconductor VT, the negative pole of diode VD3 is connected with the positive pole of electric capacity C1, between the grid that described protective resistance R4 is connected on metal-oxide-semiconductor VT and gate pole, described filter capacitor C2 is in parallel with resistance R3.
Be high level when pulse width modulation (PWM) drive singal and after being applied to metal-oxide-semiconductor driver element by resistance R1, metal-oxide-semiconductor VT starts conducting and electric current starts to increase, on resistance R5, pressure drop also synchronously increases, after on resistance R5, pressure drop is greater than triode Q2 conducting voltage, triode Q2 starts conducting, resistance R1 pressure drop starts to increase, after resistance R1 pressure drop exceedes triode Q1 conducting voltage, triode Q1 conducting, the result of triode Q1 conducting makes the base voltage of NPN triode Q2 increase to impel triode Q2 conducting degree to strengthen further, and the increasing of triode Q2 conducting degree impels the further increasing of triode Q1 conducting degree, the result of positive feedback like this is triode Q2, triode Q1 enters saturated self-locking state fast, because NPN triode Q2 is saturated, metal-oxide-semiconductor driver element enters off state, the upper pressure drop of R3 is 0, but triode Q2 base voltage has been raised because triode Q1 is saturated, self-locking state still continues to maintain, metal-oxide-semiconductor is in lasting off state, when PWM drive singal is low level, self-locking state is removed.
The course of work of metal-oxide-semiconductor negative pressure drive circuit is: when driving voltage is zero, negative voltage generating circuit produces negative voltage between the gate pole and grid of metal-oxide-semiconductor VT, diode VD2 can prevent reverse direction current flow, electric capacity C1 utilizes charge pump principle to produce negative pressure when cathode voltage sports zero, shunt regulator diode VD4 ensures that electric capacity both end voltage is stablized, PNP type triode Q3 is used for providing passage for producing negative pressure, and resistance R4 ensures the discharge time of charge pump; Between the grid that resistance R3 in protective circuit is connected to metal-oxide-semiconductor VT and source electrode; prevent electrostatic breakdown; small capacitances C2 strobes; reduce the distortion phenomenon on edge before and after driving pulse; the effect of diode VD3 provides low impedance discharge passage to metal-oxide-semiconductor VT parasitic gate input capacitance; acceleration input capacitance is discharged, thus accelerates the shutoff of metal-oxide-semiconductor VT.
More than show and describe general principle of the present utility model and principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present utility model; under the prerequisite not departing from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (4)
1. high-frequency power device switch protecting circuit, is characterized in that, the metal-oxide-semiconductor driver element comprising protected location and be connected with protected location, described protected location comprises resistance R1, PNP type triode Q1, NPN type triode Q2, resistance R2 and resistance R5, and wherein, one end of R1 is connected with the emitter of triode Q1, and the other end of resistance R1 is connected with the collector electrode of the base stage of triode Q1, triode Q2, the grounded emitter of triode Q2, the base stage of triode Q2 is connected with the collector electrode of triode Q1 and resistance R2, resistance R5 one end ground connection, and the other end is connected with resistance R2 one end to hold and is connected, described metal-oxide-semiconductor negative pressure drive circuit comprises: voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor VT, described voltage stabilizing circuit is made up of voltage stabilizing didoe VD1 and current-limiting resistance R4, the negative pole of voltage stabilizing didoe VD1 is connected with the resistance R1 in described protected location, and described resistance R2 is connected on the two ends of VD1 positive pole and described metal-oxide-semiconductor VT source electrode, described negative pressure circuit is by diode VD2, voltage-stabiliser tube VD4, triode Q3, electric capacity C1 and grid input resistance R4 forms, the positive pole of described diode VD2 is connected with the intersection point of triode Q2 collector electrode with triode Q1 base stage in the collector electrode of triode Q2 in current-limiting control circuit and protected location, the negative pole of diode VD2 is connected with the negative pole of described voltage-stabiliser tube V4 with the positive pole of described electric capacity C1 simultaneously, the positive pole of described voltage-stabiliser tube VD4 is connected with the negative pole of electric capacity C1, the base stage of described triode Q3 is connected with the positive pole of diode VD2, the collector electrode of triode Q3 is connected with the positive pole of electric capacity C1, the emitter of triode Q3 to be connected between resistance R2 and R5 and to be connected with the source electrode of described metal-oxide-semiconductor VT, the grid input resistance R4 of described metal-oxide-semiconductor VT is connected on the two ends of electric capacity C1 negative pole and metal-oxide-semiconductor VT grid, described protective circuit is made up of diode VD3, protective resistance R4 and filter capacitor C2, the positive pole of described diode VD3 is connected with the grid of metal-oxide-semiconductor VT, the negative pole of diode VD3 is connected with the positive pole of electric capacity C1, between the grid that described protective resistance R4 is connected on metal-oxide-semiconductor VT and gate pole, described filter capacitor C2 is in parallel with resistance R3.
2. high-frequency power device switch protecting circuit according to claim 1, is characterized in that: described triode Q1 is PNP type triode.
3. high-frequency power device switch protecting circuit according to claim 1, is characterized in that: described triode Q2 is NPN type triode.
4. high-frequency power device switch protecting circuit according to claim 1, is characterized in that: described triode Q3 is PNP type triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420522115.2U CN204089759U (en) | 2014-09-12 | 2014-09-12 | High-frequency power device switch protecting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420522115.2U CN204089759U (en) | 2014-09-12 | 2014-09-12 | High-frequency power device switch protecting circuit |
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| Publication Number | Publication Date |
|---|---|
| CN204089759U true CN204089759U (en) | 2015-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420522115.2U Expired - Fee Related CN204089759U (en) | 2014-09-12 | 2014-09-12 | High-frequency power device switch protecting circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418189A (en) * | 2018-01-30 | 2018-08-17 | 联合汽车电子有限公司 | Switch protecting circuit |
| CN108631259A (en) * | 2018-04-24 | 2018-10-09 | 安徽艾可蓝环保股份有限公司 | A kind of adjustable overcurrent protection and overcurrent turn-off function latching circuit |
-
2014
- 2014-09-12 CN CN201420522115.2U patent/CN204089759U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418189A (en) * | 2018-01-30 | 2018-08-17 | 联合汽车电子有限公司 | Switch protecting circuit |
| CN108418189B (en) * | 2018-01-30 | 2019-11-22 | 联合汽车电子有限公司 | Switch protecting circuit |
| CN108631259A (en) * | 2018-04-24 | 2018-10-09 | 安徽艾可蓝环保股份有限公司 | A kind of adjustable overcurrent protection and overcurrent turn-off function latching circuit |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: JIANG ZHONGMING LIU YE Effective date: 20150205 Owner name: YIYANG WATER CONSERVANCY AND HYDROPOWER CONSTRUCTI Free format text: FORMER OWNER: CAI QUNWEN Effective date: 20150205 Owner name: CAI QUNWEN Free format text: FORMER OWNER: YE LIANGDI Effective date: 20150205 Owner name: JIANG ZHONGMING LIU YE Effective date: 20150205 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 315700 NINGBO, ZHEJIANG PROVINCE TO: 413000 YIYANG, HUNAN PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20150205 Address after: High tech Zone 413000 Hunan city of Yiyang province (South - reunion Hotel 9 floor) Patentee after: Yiyang water conservancy and Hydropower Construction Co.,Ltd. Address before: 413000 Yiyang city of Hunan province Heshan District Yi Road No. 12 Patentee before: Cai Qunwen Patentee before: Jiang Zhongming Patentee before: Liu Ye Effective date of registration: 20150205 Address after: 413000 Yiyang city of Hunan province Heshan District Yi Road No. 12 Patentee after: Cai Qunwen Patentee after: Jiang Zhongming Patentee after: Liu Ye Address before: 315700 Dan River Road, Xiangshan County, Zhejiang, Ningbo Patentee before: Ye Liangdi |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 Termination date: 20150912 |
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| EXPY | Termination of patent right or utility model |