CN204089758U - High-frequency power device clamping protective circuit - Google Patents
High-frequency power device clamping protective circuit Download PDFInfo
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- CN204089758U CN204089758U CN201420521979.2U CN201420521979U CN204089758U CN 204089758 U CN204089758 U CN 204089758U CN 201420521979 U CN201420521979 U CN 201420521979U CN 204089758 U CN204089758 U CN 204089758U
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Abstract
High-frequency power device clamping protective circuit, relates to electricity field, the metal-oxide-semiconductor driver element comprising clamp circuit and be connected with clamp circuit; Described clamp circuit comprises operational amplifier U, metal-oxide-semiconductor Q1 and resistance R1 ~ R4; Described metal-oxide-semiconductor negative pressure drive circuit comprises: voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor Q3.Compared with prior art; the technical solution of the utility model achieves has carried out input voltage protection by clamp circuit to the switch of power device; and the utility model is also to high-frequency power device switch-linear hybrid metal-oxide-semiconductor negative pressure drive circuit; response fast can be carried out to metal-oxide-semiconductor by metal-oxide-semiconductor negative pressure drive circuit close and realize driving protection to metal-oxide-semiconductor, improve fail safe and the useful life of whole circuit.
Description
Technical field
The utility model relates to electricity field, is specially high-frequency power device clamping protective circuit.
Background technology
In the application of power device; very important to the protection of overload and load short circuits; owing to lacking, protective circuit or protective circuit cause not in time often for the damage of some equipment; although some application-specific integrated circuit (ASIC) is integrated with certain defencive function, often Protection parameters is single can not realize designer's intention easily.And not using the scheme possessing defencive function integrated circuit, then power device is in the state of running nakedly, and faces the damage under fortuitous event at any time.Even if having a mind to independent design protection circuit, often circuit relative complex, cost is also corresponding higher.Along with the development of power semiconductor device, power field effect transistor has become device the most frequently used in power device Switching Power Supply, due to advantages such as its switching speed is fast, driving power is little, easy parallel connections, is widely used in the occasion of high frequency, middle low power.At present, the switching frequency that voltage source drives is more than 1MHz, but the too high meeting of switching frequency causes series of problems, the Main Bottleneck wherein hindering voltage source driving switch frequency to improve is exactly the loss of the loss of switch device conductive and turn off process, the loss of gate-drive and switching device output capacitance; For addressing these problems, need a kind of new circuit structure badly to realize the switch protection of high-frequency power device.
Utility model content
The purpose of this utility model is to provide a kind of high-frequency power device clamping protective circuit, by being combined with metal-oxide-semiconductor Driving technique by clamp technique, solves the problem in background technology.
For achieving the above object, the utility model provides following technical scheme:
High-frequency power device clamping protective circuit, the metal-oxide-semiconductor driver element comprising clamp circuit and be connected with clamp circuit, described clamp circuit comprises operational amplifier U, metal-oxide-semiconductor Q1 and resistance R1 ~ R4, the drain electrode of described metal-oxide-semiconductor Q1 connects and accesses input voltage through resistance R1, the grid of metal-oxide-semiconductor Q1 is connected with the output out of operational amplifier U and second resistance R2 one end, the source ground of metal-oxide-semiconductor Q1, operational amplifier U reverse input end is connected with the 3rd resistance R3 one end and the 4th resistance R4 one end, the 4th resistance R4 other end and the second resistance R2 other end ground connection, the 3rd resistance R3 other end drains with metal-oxide-semiconductor Q1 and is connected, and as circuit output end, described metal-oxide-semiconductor negative pressure drive circuit comprises: voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor Q3, described voltage stabilizing circuit is made up of voltage stabilizing didoe VD1 and current-limiting resistance R6, the negative pole of voltage stabilizing didoe VD1 is connected with the resistance R3 in described clamp circuit, and described resistance R5 is connected on the two ends of VD1 positive pole and described metal-oxide-semiconductor Q3 source electrode, described negative pressure circuit is by diode VD2, voltage-stabiliser tube VD4, triode Q2, electric capacity C1 and grid input resistance R6 forms, the positive pole of described diode VD2 is connected with the intersection point of triode Q2 collector electrode with triode Q1 base stage in the collector electrode of triode Q2 in current-limiting control circuit and protected location, the negative pole of diode VD2 is connected with the negative pole of described voltage-stabiliser tube V4 with the positive pole of described electric capacity C1 simultaneously, the positive pole of described voltage-stabiliser tube VD4 is connected with the negative pole of electric capacity C1, the base stage of described triode Q2 is connected with the positive pole of diode VD2, the collector electrode of triode Q2 is connected with the positive pole of electric capacity C1, the emitter of triode Q2 to be connected between resistance R5 and R8 and to be connected with the source electrode of described metal-oxide-semiconductor Q3, the grid input resistance R6 of described metal-oxide-semiconductor Q3 is connected on the two ends of electric capacity C1 negative pole and metal-oxide-semiconductor Q3 grid, described protective circuit is made up of diode VD3, protective resistance R6 and filter capacitor C2, the positive pole of described diode VD3 is connected with the grid of metal-oxide-semiconductor Q3, the negative pole of diode VD3 is connected with the positive pole of electric capacity C1, between the grid that described protective resistance R6 is connected on metal-oxide-semiconductor Q3 and gate pole, described filter capacitor C2 is in parallel with resistance R7.
Further, described operational amplifier U is single stage operational amplifier.
Compared with prior art; the technical solution of the utility model achieves has carried out input voltage protection by clamp circuit to the switch of power device; and the utility model is also to high-frequency power device switch-linear hybrid metal-oxide-semiconductor negative pressure drive circuit; response fast can be carried out to metal-oxide-semiconductor by metal-oxide-semiconductor negative pressure drive circuit close and realize driving protection to metal-oxide-semiconductor, improve fail safe and the useful life of whole circuit.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
The technological means realized to make the utility model, creation characteristic, reaching object and effect is easy to understand, below in conjunction with concrete diagram, setting forth the utility model further.
High-frequency power device clamping protective circuit as shown in Figure 1, the metal-oxide-semiconductor driver element comprising clamp circuit and be connected with clamp circuit, described clamp circuit comprises operational amplifier U, metal-oxide-semiconductor Q1 and resistance R1 ~ R4, the drain electrode of described metal-oxide-semiconductor Q1 connects and accesses input voltage through resistance R1, the grid of metal-oxide-semiconductor Q1 is connected with the output out of single stage operational amplifier U and second resistance R2 one end, the source ground of metal-oxide-semiconductor Q1, single stage operational amplifier U reverse input end is connected with the 3rd resistance R3 one end and the 4th resistance R4 one end, the 4th resistance R4 other end and the second resistance R2 other end ground connection, the 3rd resistance R3 other end drains with metal-oxide-semiconductor Q1 and is connected, and as circuit output end, described metal-oxide-semiconductor negative pressure drive circuit comprises: voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor Q3, described voltage stabilizing circuit is made up of voltage stabilizing didoe VD1 and current-limiting resistance R6, the negative pole of voltage stabilizing didoe VD1 is connected with the resistance R3 in described clamp circuit, and described resistance R5 is connected on the two ends of VD1 positive pole and described metal-oxide-semiconductor Q3 source electrode, described negative pressure circuit is by diode VD2, voltage-stabiliser tube VD4, triode Q2, electric capacity C1 and grid input resistance R6 forms, the positive pole of described diode VD2 is connected with the intersection point of triode Q2 collector electrode with triode Q1 base stage in the collector electrode of triode Q2 in current-limiting control circuit and protected location, the negative pole of diode VD2 is connected with the negative pole of described voltage-stabiliser tube V4 with the positive pole of described electric capacity C1 simultaneously, the positive pole of described voltage-stabiliser tube VD4 is connected with the negative pole of electric capacity C1, the base stage of described triode Q2 is connected with the positive pole of diode VD2, the collector electrode of triode Q2 is connected with the positive pole of electric capacity C1, the emitter of triode Q2 to be connected between resistance R5 and R8 and to be connected with the source electrode of described metal-oxide-semiconductor Q3, the grid input resistance R6 of described metal-oxide-semiconductor Q3 is connected on the two ends of electric capacity C1 negative pole and metal-oxide-semiconductor Q3 grid, described protective circuit is made up of diode VD3, protective resistance R6 and filter capacitor C2, the positive pole of described diode VD3 is connected with the grid of metal-oxide-semiconductor Q3, the negative pole of diode VD3 is connected with the positive pole of electric capacity C1, between the grid that described protective resistance R6 is connected on metal-oxide-semiconductor Q3 and gate pole, described filter capacitor C2 is in parallel with resistance R7.
The course of work of the present utility model is: input voltage and electric current are carried out clamper restriction and export in certain protection range to after metal-oxide-semiconductor driver element by clamp circuit, the course of work of metal-oxide-semiconductor negative pressure drive circuit is: when driving voltage is zero, negative voltage generating circuit produces negative voltage between the gate pole and grid of metal-oxide-semiconductor VT, diode VD2 can prevent reverse direction current flow, electric capacity C1 utilizes charge pump principle to produce negative pressure when cathode voltage sports zero, shunt regulator diode VD4 ensures that electric capacity both end voltage is stablized, PNP type triode Q is used for providing passage for producing negative pressure, resistance R6 ensures the discharge time of charge pump, between the grid that resistance R7 in protective circuit is connected to metal-oxide-semiconductor Q3 and source electrode, prevent electrostatic breakdown, small capacitances C2 strobes, reduce the distortion phenomenon on edge before and after driving pulse, the effect of diode VD3 provides low impedance discharge passage to metal-oxide-semiconductor Q3 parasitic gate input capacitance, acceleration input capacitance is discharged, thus accelerates the shutoff of metal-oxide-semiconductor Q3.
More than show and describe general principle of the present utility model and principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present utility model; under the prerequisite not departing from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (2)
1. high-frequency power device clamping protective circuit, is characterized in that, the metal-oxide-semiconductor driver element comprising clamp circuit and be connected with clamp circuit, described clamp circuit comprises operational amplifier U, metal-oxide-semiconductor Q1 and resistance R1 ~ R4, the drain electrode of described metal-oxide-semiconductor Q1 connects and accesses input voltage through resistance R1, the grid of metal-oxide-semiconductor Q1 is connected with the output out of operational amplifier U and second resistance R2 one end, the source ground of metal-oxide-semiconductor Q1, operational amplifier U reverse input end is connected with the 3rd resistance R3 one end and the 4th resistance R4 one end, the 4th resistance R4 other end and the second resistance R2 other end ground connection, the 3rd resistance R3 other end drains with metal-oxide-semiconductor Q1 and is connected, and as circuit output end, described metal-oxide-semiconductor negative pressure drive circuit comprises: voltage stabilizing circuit, negative pressure circuit, protective circuit and metal-oxide-semiconductor Q3, described voltage stabilizing circuit is made up of voltage stabilizing didoe VD1 and current-limiting resistance R6, the negative pole of voltage stabilizing didoe VD1 is connected with the resistance R3 in described clamp circuit, and described resistance R5 is connected on the two ends of VD1 positive pole and described metal-oxide-semiconductor Q3 source electrode, described negative pressure circuit is by diode VD2, voltage-stabiliser tube VD4, triode Q2, electric capacity C1 and grid input resistance R6 forms, the positive pole of described diode VD2 is connected with the intersection point of triode Q2 collector electrode with triode Q1 base stage in the collector electrode of triode Q2 in current-limiting control circuit and protected location, the negative pole of diode VD2 is connected with the negative pole of described voltage-stabiliser tube V4 with the positive pole of described electric capacity C1 simultaneously, the positive pole of described voltage-stabiliser tube VD4 is connected with the negative pole of electric capacity C1, the base stage of described triode Q2 is connected with the positive pole of diode VD2, the collector electrode of triode Q2 is connected with the positive pole of electric capacity C1, the emitter of triode Q2 to be connected between resistance R5 and R8 and to be connected with the source electrode of described metal-oxide-semiconductor Q3, the grid input resistance R6 of described metal-oxide-semiconductor Q3 is connected on the two ends of electric capacity C1 negative pole and metal-oxide-semiconductor Q3 grid, described protective circuit is made up of diode VD3, protective resistance R6 and filter capacitor C2, the positive pole of described diode VD3 is connected with the grid of metal-oxide-semiconductor Q3, the negative pole of diode VD3 is connected with the positive pole of electric capacity C1, between the grid that described protective resistance R6 is connected on metal-oxide-semiconductor Q3 and gate pole, described filter capacitor C2 is in parallel with resistance R7.
2. high-frequency power device clamping protective circuit according to claim 1, is characterized in that: described operational amplifier U is single stage operational amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420521979.2U CN204089758U (en) | 2014-09-12 | 2014-09-12 | High-frequency power device clamping protective circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420521979.2U CN204089758U (en) | 2014-09-12 | 2014-09-12 | High-frequency power device clamping protective circuit |
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| Publication Number | Publication Date |
|---|---|
| CN204089758U true CN204089758U (en) | 2015-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420521979.2U Expired - Fee Related CN204089758U (en) | 2014-09-12 | 2014-09-12 | High-frequency power device clamping protective circuit |
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| Country | Link |
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| CN (1) | CN204089758U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112152189A (en) * | 2020-09-15 | 2020-12-29 | 广东省大湾区集成电路与系统应用研究院 | Clamping circuit and electronic equipment |
-
2014
- 2014-09-12 CN CN201420521979.2U patent/CN204089758U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112152189A (en) * | 2020-09-15 | 2020-12-29 | 广东省大湾区集成电路与系统应用研究院 | Clamping circuit and electronic equipment |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 Termination date: 20150912 |
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| EXPY | Termination of patent right or utility model |