CN102231594A - Drive circuit for preventing oscillation of grid drive signals - Google Patents
Drive circuit for preventing oscillation of grid drive signals Download PDFInfo
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- CN102231594A CN102231594A CN2011101935135A CN201110193513A CN102231594A CN 102231594 A CN102231594 A CN 102231594A CN 2011101935135 A CN2011101935135 A CN 2011101935135A CN 201110193513 A CN201110193513 A CN 201110193513A CN 102231594 A CN102231594 A CN 102231594A
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- 238000000034 method Methods 0.000 abstract description 11
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- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
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Abstract
The invention relates to a drive circuit for preventing the oscillation of grid drive signals. The drive circuit is characterized by comprising a buffer circuit, an amplitude limiting circuit and a rapid discharge circuit, wherein the buffer circuit receives and processes a drive signal PWM (Pulse Width Modulation) and then outputs the signal to the amplitude limiting circuit; the amplitude limiting circuit processes the received signal and then respectively outputs the signal to the grid of an MOS (Metal Oxide Semiconductor) transistor and the rapid discharge circuit; and the rapid discharge circuit also receives the drive signal PWM. The drive circuit has the advantages of lowering the voltage change rate of the MOS transistor, decreasing the open surge in the opening process, reducing the impact and damage to the MOS transistor, improving the EMC (Electro Magnetic Compatibility) property of the whole switch power supply, decreasing the turnoff loss, effectively avoiding the abnormal oscillation of drive signals, protecting normal working states of the MOS transistor and the circuit, and the like.
Description
Technical field
The present invention is a kind of drive circuit of anti-grid drive signal vibration, belongs to Switching Power Supply Driving technique field, particularly a kind of drive circuit of anti-grid drive signal vibration.
Background technology
At present, most of switching power circuits all can be used power device, and power MOS pipe is fast with its switching speed, driving power is little and advantage such as low in energy consumption has obtained using widely in the power supply product of middle low power.Often there will be two kinds of situations in the circuit that adopts the bridge type topology structure, and the first, two power devices on the same brachium pontis are in transfer process, and gate drive signal can produce vibration, and this moment, the loss of power device was bigger.When oscillation amplitude is higher, will makes the former power MOS pipe conducting that should turn-off, thereby cause two power MOS pipes on the same brachium pontis to lead directly to and the formation short circuit.At above problem, solution commonly used at present has following several: (a) apply back-pressure to grid when metal-oxide-semiconductor turn-offs, weaken the influence of vibration to it thereby turn-off metal-oxide-semiconductor fast, but its back-pressure circuit is realized complexity, also increased cost simultaneously.(b) reduce the distributed inductance of circuit as far as possible, make drive signal become exponential damping, reduce oscillation amplitude to a certain extent by damped oscillation.Method commonly used makes chip for driving near metal-oxide-semiconductor as far as possible when design circuit is arranged, and reduces the area that enclose the closed-loop path.But it is not clearly that above method is improved effect, is subjected to product structure and human factor many.The second, because offering the drive current of metal-oxide-semiconductor, control signal rises very fast (rising edge), can cause the higher surge of opening, cause the metal-oxide-semiconductor impact failure, can influence whole Switching Power Supply EMC characteristic to a certain extent.
Summary of the invention
The present invention is directed to the problems referred to above that present technology exists, proposed a kind of drive circuit of anti-grid drive signal vibration, it has simple and reliable, the easy realization of circuit, can solve characteristics such as above two large problems simultaneously.Can at utmost suppress the vibration of drive signal on the one hand, prevent that two power MOS pipes of same brachium pontis are straight-through; Can effectively control the drive current rate of climb of metal-oxide-semiconductor on the other hand, reduce the surge of opening in the opening process, reduce metal-oxide-semiconductor impact failure and the whole Switching Power Supply EMC characteristic of improvement.
To achieve these goals, the present invention realizes by the following technical solutions, it is a kind of drive circuit of anti-grid drive signal vibration, it is characterized in that comprising buffer circuit, amplitude limiter circuit and quick discharging circuit, wherein buffer circuit receive drive signal PWM and handle after this signal is exported to amplitude limiter circuit, amplitude limiter circuit is exported to the grid and the quick discharging circuit of metal-oxide-semiconductor after with the signal processing that receives respectively, and quick discharging circuit also receives drive signal PWM.
Described amplitude limiter circuit, comprise voltage stabilizing didoe,, voltage stabilizing didoe, plus earth, negative electrode connect described metal-oxide-semiconductor, grid.
Described buffer circuit comprises the gate driving resistance and second electric capacity; Described quick discharging circuit comprises diode, current-limiting resistance, fast recovery diode, resistance, first electric capacity, triode; Wherein the two ends of gate driving resistance are connected respectively to the negative electrode of diode and the grid of metal-oxide-semiconductor; Gate driving resistance two ends series arm of forming by fast recovery diode and current-limiting resistance in parallel, the anode of fast recovery diode links to each other with current-limiting resistance, and the negative electrode of fast recovery diode and the negative electrode of diode and grid drive
Moving resistance links to each other; The parallel branch that the resistance and first electric capacity are formed, one termination drive signal PWM reaches and links to each other with the anode of diode, the other end links to each other with the base stage of triode, and the emitter of triode links to each other the grounded collector of triode with the negative electrode of gate driving resistance and fast recovery diode; The negative electrode of voltage stabilizing didoe links to each other with the grid of metal-oxide-semiconductor, and anode links to each other with ground; Second electric capacity is connected in parallel between the grid and ground of metal-oxide-semiconductor; The source electrode of metal-oxide-semiconductor links to each other with ground, and drain electrode meets input voltage+HVDC.
Described triode is the positive-negative-positive triode.
Described metal-oxide-semiconductor is a N type metal-oxide-semiconductor, and its source electrode links to each other with ground, and drain electrode is connected with input voltage+HVDC.
Described second electric capacity is single electric capacity, also can be two or more shunt capacitances.
The technical solution used in the present invention beneficial effect compared with prior art is as follows:
The first, by between chip for driving and metal-oxide-semiconductor grid, increasing the buffer circuit of forming by resistance R 3, capacitor C 2, promptly be connected in series gate driving resistance, shunt capacitance between metal-oxide-semiconductor grid source electrode in the charging interval of proper extension grid capacitance, reduces voltage change ratio.By the service time of suitable increase metal-oxide-semiconductor, reduce the oscillation amplitude of drive signal to a great extent, prevent that two power MOS pipes of same brachium pontis are straight-through; Also can effectively control the drive current rate of climb of metal-oxide-semiconductor in addition, reduce the surge of opening in the opening process, reduce metal-oxide-semiconductor impact failure and the whole Switching Power Supply EMC characteristic of improvement.
Second, for fear of the employing measure influence of a pair of metal-oxide-semiconductor turn-off time, the present invention has added the quick discharging circuit that is turn-offed by resistance R 1, capacitor C 1, current-limiting resistance R2, fast recovery diode D2, triode Q1, the acceleration metal-oxide-semiconductor formed, wherein the parallel branch of resistance R 1, capacitor C 1 composition can make triode Q1 quick conducting when metal-oxide-semiconductor need turn-off, the oscillating voltage of releasing rapidly reduces turn-off power loss.
The 3rd, by increasing amplitude limiter circuit, i.e. voltage stabilizing didoe D3 further limits the overvoltage of grid source electrode, effectively prevents the unusual vibration of drive signal, the operate as normal of protection metal-oxide-semiconductor and circuit.
Description of drawings
Fig. 1 is a circuit block diagram of the present invention;
Fig. 2 is the circuit theory diagrams of the specific embodiment of Fig. 1.
Embodiment
Below in conjunction with drawings and Examples the present invention is done further detailed description.
As shown in Figure 1, it is a kind of drive circuit of anti-grid drive signal vibration, characteristics of the present invention are to comprise buffer circuit 11, amplitude limiter circuit 13 and quick discharging circuit 12, wherein buffer circuit 11 receive drive signal PWM and handle after this signal is exported to amplitude limiter circuit 13, amplitude limiter circuit 13 is exported to grid and the quick discharging circuit 12 of metal-oxide-semiconductor Q2 after with the signal processing that receives respectively, and quick discharging circuit 12 also receives drive signal PWM.
In the present embodiment, described amplitude limiter circuit 13 comprises voltage stabilizing didoe D3, the plus earth of voltage stabilizing didoe D3, and negative electrode connects the grid of described metal-oxide-semiconductor Q2.
Described buffer circuit 11 comprises the gate driving resistance R 3 and second capacitor C 2; Described quick discharging circuit 12 comprises diode D1, current-limiting resistance R2, fast recovery diode D2, resistance R 1, first capacitor C 1, triode Q1, triode Q1 is the positive-negative-positive triode, second electric capacity (C2) is single electric capacity, also can be two or more shunt capacitances; Wherein the two ends of gate driving resistance R 3 are connected respectively to the negative electrode of diode D1 and the grid of metal-oxide-semiconductor Q2; Gate driving resistance R 3 two ends series arm of forming by fast recovery diode D2 and current-limiting resistance R2 in parallel, the anode of fast recovery diode D2 links to each other with current-limiting resistance, and the negative electrode of fast recovery diode D2 links to each other with negative electrode and the gate driving resistance R 3 of diode D1; The parallel branch that the resistance R 1 and first capacitor C 1 are formed, a termination drive signal PWM reaches and links to each other with the anode of diode D1, and the other end links to each other triode with the base stage of triode Q1
The emitter of Q1 links to each other the grounded collector of triode Q1 with the negative electrode of gate driving resistance R 3 with fast recovery diode D2; The negative electrode of voltage stabilizing didoe D3 links to each other with the grid of metal-oxide-semiconductor Q2, and anode links to each other with ground; Second capacitor C 2 is connected in parallel between the grid and ground of metal-oxide-semiconductor Q2; Metal-oxide-semiconductor Q2 is a N type metal-oxide-semiconductor, and its source electrode links to each other with ground, and drain electrode is connected with input voltage+HVDC.
The operation principle of present embodiment:
As shown in Figure 1, second capacitor C 2 in parallel is formed the RC buffer circuit between gate driving resistance R 3, metal-oxide-semiconductor Q2 grid source electrode, by the service time of suitable increase metal-oxide-semiconductor Q2, it is the charging interval of proper extension grid capacitance, reduce voltage change ratio, reduced the oscillation amplitude of drive signal to a great extent; Simultaneously, the drive current rate of climb of metal-oxide-semiconductor Q2 is effectively controlled in the suitable increase of metal-oxide-semiconductor Q2 service time, reduces the surge of opening in the opening process, reduces metal-oxide-semiconductor Q2 impact failure, also improves whole Switching Power Supply EMC characteristic.In addition, because metal-oxide-semiconductor Q2 is generally operational in the on off state of tens kHz, for the circuit loss that reduces to cause because of driving resistor, gate driving resistance R 2 resistances are tens Ω; In order to reduce the influence of 2 pairs of metal-oxide-semiconductor Q2 turn-off times of second capacitor C in parallel, second capacitor C 2 is generally got about 0.01UF.
As shown in Figure 1, resistance R 1, first capacitor C 1, current-limiting resistance R2, fast recovery diode D2,
The discharge circuit that the acceleration metal-oxide-semiconductor Q2 of triode Q1, composition turn-offs.Wherein the parallel branch of resistance R 1, first capacitor C, 1 composition makes triode Q1 quick conducting when metal-oxide-semiconductor Q2 need turn-off, and ends fast when metal-oxide-semiconductor Q2 needs conducting.When drive signal PWM by low transition in the process of high level, first capacitor C 1 is equivalent to ac short circuit, high level affacts the base stage of triode Q1 rapidly by first capacitor C 1, because triode Q1 base voltage is higher than emitter voltage, triode Q1 is in cut-off state, make metal-oxide-semiconductor Q2 open-minded rapidly, circuit working is not had any impact.When drive signal PWM transfers low level to by high level (trailing edge),, diode D1 is oppositely ended owing to have electric charge in the grid capacitance of metal-oxide-semiconductor Q2; Because first capacitor C 1 is equivalent to ac short circuit, this moment, the E electrode potential of triode Q1 was higher than the B utmost point, the rapid conducting of triode Q1 again.When metal-oxide-semiconductor Q2 grid source electrode did not produce vibration, the electric charge in the metal-oxide-semiconductor Q2 grid capacitance was released fast over the ground by the discharge circuit that current-limiting resistance R2, fast recovery diode D2, triode Q1 form, thereby realized that metal-oxide-semiconductor Q2 turn-offs fast, reduces switching loss; When metal-oxide-semiconductor Q2 grid source electrode had vibration, this discharge circuit can be released oscillating voltage rapidly through current-limiting resistance R2, inverse parallel fast recovery diode D2, triode Q1 again, has avoided metal-oxide-semiconductor to mislead.
As shown in Figure 1, voltage stabilizing didoe D3 is connected in parallel on two ends, metal-oxide-semiconductor grid source, forms amplitude limiter circuit, further limits the overvoltage of grid source electrode, effectively prevents the unusual vibration of drive signal, the operate as normal of protection metal-oxide-semiconductor and circuit.
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101935135A CN102231594A (en) | 2011-07-12 | 2011-07-12 | Drive circuit for preventing oscillation of grid drive signals |
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| CN2011101935135A CN102231594A (en) | 2011-07-12 | 2011-07-12 | Drive circuit for preventing oscillation of grid drive signals |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102570400A (en) * | 2012-03-13 | 2012-07-11 | 中国矿业大学 | Intrinsically safe high-power switch converter output short-circuit protection device and method |
| CN103016823A (en) * | 2012-12-08 | 2013-04-03 | 中国航天科技集团公司第六研究院第十一研究所 | Quick release circuit for redundancy control |
| CN103633556A (en) * | 2012-08-28 | 2014-03-12 | 国神光电科技（上海）有限公司 | Laser diode drive circuit based on buffer/ line driver |
| CN105281553A (en) * | 2015-11-25 | 2016-01-27 | 天津航空机电有限公司 | Power tube driving circuit |
| WO2017088241A1 (en) * | 2015-11-26 | 2017-06-01 | 深圳市华星光电技术有限公司 | Buffer circuit |
| CN107290619A (en) * | 2017-08-08 | 2017-10-24 | 广州市三锐电子科技有限公司 | A kind of electrode delamination detects circuit |
| CN108110734A (en) * | 2017-12-27 | 2018-06-01 | 苏州易美新思新能源科技有限公司 | A kind of fast drive circuit |
| CN109495091A (en) * | 2018-10-31 | 2019-03-19 | 北京无线电测量研究所 | A kind of pulsed-voltage control circuit |
| US10333462B2 (en) | 2016-11-03 | 2019-06-25 | Industrial Technology Research Institute | Measuring apparatus for solar cell |
| CN110085169A (en) * | 2019-06-10 | 2019-08-02 | 北京航空航天大学 | A kind of 10-bit high speed charge and discharge driving circuit device for FPD |
| CN112636733A (en) * | 2020-12-07 | 2021-04-09 | 珠海格力电器股份有限公司 | IGBT drive circuit and power conversion equipment |
| CN113339149A (en) * | 2021-06-18 | 2021-09-03 | 中国北方发动机研究所(天津) | Driving circuit for effectively inhibiting electromagnetic radiation of diesel engine electric control system |
| CN113541653A (en) * | 2021-07-27 | 2021-10-22 | 温州大学 | Nanosecond steep-edge pulse signal generator based on transmission line reflection principle |
| CN113676024A (en) * | 2021-08-16 | 2021-11-19 | 深圳天狼芯半导体有限公司 | Gate circuit, switching power supply circuit and charger applied to NMOS tube |
| CN115812237A (en) * | 2021-04-25 | 2023-03-17 | 京东方科技集团股份有限公司 | Source electrode driving circuit, display device and data driving method |
| CN115955148A (en) * | 2022-12-20 | 2023-04-11 | 张家港华捷电子有限公司 | A method of vibration and sound generation of brushless motor |
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| US20050231989A1 (en) * | 2004-03-30 | 2005-10-20 | Geliang Shao | Drive circuit and power supply apparatus |
| CN101895190A (en) * | 2010-07-02 | 2010-11-24 | 日银Imp微电子有限公司 | Grid drive circuit for controlling bridge type drive circuit |
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2011
- 2011-07-12 CN CN2011101935135A patent/CN102231594A/en active Pending
Patent Citations (3)
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| US5828244A (en) * | 1995-07-31 | 1998-10-27 | Sgs-Thompson Microelectronics S.R.L. | Driving circuit and method for driving a MOS transistor with delayed activation |
| US20050231989A1 (en) * | 2004-03-30 | 2005-10-20 | Geliang Shao | Drive circuit and power supply apparatus |
| CN101895190A (en) * | 2010-07-02 | 2010-11-24 | 日银Imp微电子有限公司 | Grid drive circuit for controlling bridge type drive circuit |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102570400A (en) * | 2012-03-13 | 2012-07-11 | 中国矿业大学 | Intrinsically safe high-power switch converter output short-circuit protection device and method |
| CN103633556A (en) * | 2012-08-28 | 2014-03-12 | 国神光电科技（上海）有限公司 | Laser diode drive circuit based on buffer/ line driver |
| CN103016823A (en) * | 2012-12-08 | 2013-04-03 | 中国航天科技集团公司第六研究院第十一研究所 | Quick release circuit for redundancy control |
| CN105281553A (en) * | 2015-11-25 | 2016-01-27 | 天津航空机电有限公司 | Power tube driving circuit |
| WO2017088241A1 (en) * | 2015-11-26 | 2017-06-01 | 深圳市华星光电技术有限公司 | Buffer circuit |
| US10333462B2 (en) | 2016-11-03 | 2019-06-25 | Industrial Technology Research Institute | Measuring apparatus for solar cell |
| CN107290619B (en) * | 2017-08-08 | 2023-09-26 | 广州市三锐电子科技有限公司 | Electrode drop detection circuit |
| CN107290619A (en) * | 2017-08-08 | 2017-10-24 | 广州市三锐电子科技有限公司 | A kind of electrode delamination detects circuit |
| CN108110734A (en) * | 2017-12-27 | 2018-06-01 | 苏州易美新思新能源科技有限公司 | A kind of fast drive circuit |
| CN109495091A (en) * | 2018-10-31 | 2019-03-19 | 北京无线电测量研究所 | A kind of pulsed-voltage control circuit |
| CN110085169A (en) * | 2019-06-10 | 2019-08-02 | 北京航空航天大学 | A kind of 10-bit high speed charge and discharge driving circuit device for FPD |
| CN112636733A (en) * | 2020-12-07 | 2021-04-09 | 珠海格力电器股份有限公司 | IGBT drive circuit and power conversion equipment |
| WO2022121324A1 (en) * | 2020-12-07 | 2022-06-16 | 珠海格力电器股份有限公司 | Igbt driving circuit and power conversion device |
| US20230299763A1 (en) * | 2020-12-07 | 2023-09-21 | Gree Electric Appliances, Inc. Of Zhuhai | IGBT Driving Circuit and Power Conversion Device |
| US12047058B2 (en) * | 2020-12-07 | 2024-07-23 | Gree Electric Appliances, Inc. Of Zhuhai | IGBT driving circuit and power conversion device |
| CN115812237A (en) * | 2021-04-25 | 2023-03-17 | 京东方科技集团股份有限公司 | Source electrode driving circuit, display device and data driving method |
| CN113339149A (en) * | 2021-06-18 | 2021-09-03 | 中国北方发动机研究所(天津) | Driving circuit for effectively inhibiting electromagnetic radiation of diesel engine electric control system |
| CN113541653A (en) * | 2021-07-27 | 2021-10-22 | 温州大学 | Nanosecond steep-edge pulse signal generator based on transmission line reflection principle |
| CN113676024A (en) * | 2021-08-16 | 2021-11-19 | 深圳天狼芯半导体有限公司 | Gate circuit, switching power supply circuit and charger applied to NMOS tube |
| CN115955148A (en) * | 2022-12-20 | 2023-04-11 | 张家港华捷电子有限公司 | A method of vibration and sound generation of brushless motor |
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Application publication date: 20111102 |