CN102684462A - Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof - Google Patents

Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof Download PDF

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CN102684462A
CN102684462A CN2012101762713A CN201210176271A CN102684462A CN 102684462 A CN102684462 A CN 102684462A CN 2012101762713 A CN2012101762713 A CN 2012101762713A CN 201210176271 A CN201210176271 A CN 201210176271A CN 102684462 A CN102684462 A CN 102684462A
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mosfet pipe
switch mosfet
diode
voltage
negative pressure
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CN102684462B (en
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陈宗祥
葛芦生
何胜方
宋斌
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MAANSHAN ANGONG UNIVERSITY INTELLIGENT EQUIPMENT TECHNOLOGY INSTITUTE Co.,Ltd.
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Anhui University of Technology AHUT
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Abstract

The invention discloses a novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and a control method thereof which belong to the field of power electronic driving. The driving circuit comprises a negative pressure clamping driving unit and a BOOST unit which are in circuit connection. The control method includes the following steps: (1) controlling S1 and S4 to be in connection state and S2 and S3 to be in disconnection state; (2) controlling the S1, the S2, the S3 and the S4 to be in the disconnection state and maintaining voltage on a Q gate source electrode at U3; (3) controlling the S2 and the S3 to be in the connection state and the S1 and the S4 to be in the disconnection state, enabling voltage on the Q gate source electrode to be clamped on the voltage U4 and enabling the Q to be disconnected instantaneously; and (4) controlling the S1, the S2, the S3 and the S4 to be in the connection state and maintaining voltage on the Q gate source electrode at U4. The S1, the S2, the S3 and the S4 stand for different MOSFET switch tubes. The driving circuit and the control method improve anti-jamming capability and can effectively prevent error connection of switch devices.

Description

Novel low side MOSFET/IGBT negative pressure hooping position driving circuit and control method thereof
Technical field
The invention belongs to power electronics and drive the field, more particularly, relate to a kind of drive circuit and circuit control method thereof of negative pressure driving switch pipe.
Background technology
In recent years; Along with the development of technology, voltage source switch driven frequency has surpassed 1MHz gradually, but switching frequency is too high; Can bring a series of problem; The major obstacle that wherein hinders the raising of voltage source driving switch frequency is exactly that switching device turns on and off the loss in the process, the loss of gate-drive and the loss of switching device output capacitance, and driven with current sources just in time can address the above problem, and it can improve the switching frequency of switching tube greatly; Reduce switching loss, therefore be widely used.
Driven with current sources is charged to switching tube and is discharged through a constant current signal and reaches the effect that reduces switching loss; It should be noted that especially; The maximum benefit of driven with current sources is exactly can be with minus negative pressure on-off switching tube in the process that switching tube turn-offs; Than the traditional driving circuit, the driven with current sources circuit can be in the switching tube turn off process turn-offs it with turn-off speed faster.But; Raising along with the circuit integration degree; As the critical elements inductance in the driven with current sources circuit; Because its volume is big; Be difficult to integrated, so inductance become the driven with current sources circuit integration a difficult point (Jizhen Fu.Topologies and modelings of novel bipolar gate driver techniques for next-generation high frequency voltage regulators [D]. Queen ' s University Master ' s thesis, 2010:73-76.).
Summary of the invention
The problem that the present invention will solve
Cause problems such as switching loss increasing to propose a kind of novel low side MOSFET/IGBT negative pressure hooping position driving circuit and control method thereof to the continuous rising owing to switching frequency in the prior art; Circuit of the present invention and method have been accelerated the switching speed of switching tube; Improve the antijamming capability of drive circuit, can effectively prevent misleading of switching device.
Technical scheme
Technological bill of the present invention is achieved in that
Novel low side MOSFET/IGBT negative pressure hooping position driving circuit, it comprises negative pressure clamp driver element, described negative pressure clamp driver element is connected with BOOST boosting unit circuit.
Described negative pressure clamp driver element is by power supply V Cc, bootstrap capacitor C 1, bootstrap capacitor C 2, diode D 1, diode D 2, switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4Form described power supply V CcMinus earth, power supply V CcPositive pole and diode D 1Positive pole link to each other diode D 1Negative pole and switch mosfet pipe S 1Drain electrode connect described bootstrap capacitor C 1A termination go into diode D 1Negative pole and switch mosfet pipe S 1Drain electrode between, bootstrap capacitor C 1The other end and bootstrap capacitor C 2Connect bootstrap capacitor C 2The other end with diode D 2Anodal connection, diode D 2Minus earth, said switch mosfet pipe S 4Drain electrode and power supply V CcPositive pole link to each other switch mosfet pipe S 3Drain electrode be connected on capacitor C 1With C 2Between, switch mosfet pipe S 3Source electrode be connected switch mosfet pipe S with ground 4Source electrode be connected on switch mosfet pipe S 3Drain electrode on, switch mosfet pipe S 1Source electrode link to each other switch mosfet pipe S with the grid of switch mosfet pipe Q in the BOOST boosting unit 2Drain electrode and switch mosfet pipe S 1Source electrode connect switch mosfet pipe S 2Source electrode be connected on capacitor C 2With diode D 2Between.
Said negative pressure clamp units is through controlling four switch mosfet pipe S 1, S 2, S 3, S 4Open the shutoff sequential, constitute different loops, BOOST circuit MOSFET Q is discharged and recharged, and bootstrap capacitor C 1, C 2Clamping action turn-off with this conducting of controlling Q, and it is clamped on supply voltage or negative pressure.
Further, described BOOST boosting unit is by input power supply V In, input capacitance C In, inductance L Main, switch mosfet pipe Q, diode D S, output capacitance C OutForm input power supply V with load resistance R InWith input capacitance C InParallel connection, inductance L Main, diode D SWith output capacitance C OutBack and input capacitance C successively connect InParallel connection, inductance L MainAn end be connected inductance L with the positive pole of input capacitance MainThe other end and diode D SPositive pole connect, diode D SNegative pole and output capacitance C OutPositive pole connect output capacitance C OutMinus earth, the drain electrode of switch mosfet pipe Q is connected on inductance L MainWith diode D SBetween, the source ground of switch mosfet pipe Q, said load resistance R is connected in parallel on output capacitance C OutTwo ends.
Described BOOST boosting unit is by input power supply V InPower supply is through input capacitance C InBehind the voltage regulation filtering, come the main circuit inductance L through control switch mosfet pipe Q break-make Main, output capacitance C OutDischarge and recharge, reach the purpose of boosting.
The control method of novel low side MOSFET/IGBT negative pressure hooping position driving circuit the steps include:
Mainly be the switch mosfet pipe S that gives simultaneously in the negative pressure clamp driver element 1, S 2, S 3, S 4Drive signal, wherein switch mosfet pipe S 1With S 4Drive signal identical, switch mosfet pipe S 2With S 3Drive signal identical, switch mosfet pipe S 1With S 2Drive signal opposite, and leave certain Dead Time between two kinds of signals, specifically may further comprise the steps:
(1) at first controls the switch mosfet pipe S of negative pressure clamp driver element 1With switch mosfet pipe S 4Be in conducting state, switch mosfet pipe S 2With switch mosfet pipe S 3Be in off state, at this moment power supply V CcThrough switch mosfet pipe S 4Give bootstrap capacitor C 2Charging makes bootstrap capacitor C 2On magnitude of voltage begin charging by zero volt, finally reach U 1, this magnitude of voltage is to ignore switch mosfet pipe S 4Conduction voltage drop after obtain U wherein D2Be diode D 2On conduction voltage drop; U 1Computing formula following:
U 1=V cc-U D2? （1）
Power supply V CcThrough diode D 1With switch mosfet pipe S 1Give switch mosfet pipe Q charging in the BOOST boosting unit, make its conducting, charging voltage value begins to be U 2, this magnitude of voltage is to ignore switch mosfet pipe S 1Conduction voltage drop after obtain U wherein D1Be diode D 1On conduction voltage drop; U 2Computing formula following:
U 2=?V cc-U D1 （2）
Input power supply V InBegin inductance L MainCharging is along with bootstrap capacitor C 2On the increase of magnitude of voltage, the charging voltage on the switch mosfet pipe Q also increases thereupon, finally reaches U 3, and be stabilized on this value the equivalent circuit diagram of this process such as Fig. 3 and shown in Figure 4; U 3Computing formula following:
U 3=2V cc-U D1-U D2 （3）
(2) control switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4All be in off state, because diode D 1Reverse by effect, the voltage on the switch mosfet pipe Q grid source electrode maintains U all the time 3Upward constant, the equivalent circuit diagram of this process is as shown in Figure 5;
(3) control switch mosfet pipe S 2With S 3Be in conducting state, and switch mosfet pipe S 1With S 4Be in off state, bootstrap capacitor C 2On polarity of voltage just in time opposite with the gate source voltage polarity on the switch mosfet pipe Q, form back clamping, because the voltage on the electric capacity can not suddenly change, so the gate source voltage on the switch mosfet pipe Q will be clamped at voltage U 4On, switch mosfet pipe Q moment is turned off, the equivalent circuit diagram of this process such as Fig. 6 and shown in Figure 7, input power supply V InAnd inductance L MainSimultaneously to output capacitance C OutBoost function is accomplished in charging; U 4Computing formula following:
U 4=-?V cc?+U D2 （4）
(4) control switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4Be in not on-state, the electric charge on the switch mosfet pipe Q grid source electrode does not have discharge loop, so the voltage on the switch mosfet pipe Q grid source electrode maintains U 4On, the equivalent circuit diagram of this process is as shown in Figure 8.
Beneficial effect
Than prior art, the invention has the advantages that:
(1) circuit of the present invention passes through bootstrap capacitor C 2Charging; Utilize voltage on the bootstrap capacitor principle of can not suddenling change that switch mosfet pipe Q is oppositely turn-offed, than the conventional ADS driving circuit, this circuit is only using under the positive supply condition; The pwm signal that can realize turn-offing MOSFET is a negative voltage; Turn-off time is extremely short, misleads owing to what the driving voltage fluctuation caused when having prevented the MOSFET shutoff, and has reduced turn-off power loss greatly;
(2) compare with the conventional current source driving circuit, do not have the relatively huge components and parts of this type of inductance volume in the drive circuit of the present invention, greatly reduced the volume of circuit, integrated degree is high.
Description of drawings
Fig. 1: novel low side MOSFET/IGBT negative pressure hooping position driving circuit schematic diagram;
Fig. 2: novel low side MOSFET/IGBT negative pressure hooping position driving circuit relevant parameter oscillogram;
Fig. 3: operation mode 1 equivalent circuit diagram of novel low side MOSFET/IGBT negative pressure hooping position driving circuit;
Fig. 4: operation mode 2 equivalent circuit diagrams of novel low side MOSFET/IGBT negative pressure hooping position driving circuit;
Fig. 5: operation mode 3 equivalent circuit diagrams of novel low side MOSFET/IGBT negative pressure hooping position driving circuit;
Fig. 6: operation mode 4 equivalent circuit diagrams of novel low side MOSFET/IGBT negative pressure hooping position driving circuit;
Fig. 7: operation mode 5 equivalent circuit diagrams of novel low side MOSFET/IGBT negative pressure hooping position driving circuit;
Fig. 8: operation mode 6 equivalent circuit diagrams of novel low side MOSFET/IGBT negative pressure hooping position driving circuit;
Fig. 9: switch mosfet pipe Q gate source voltage waveform when switching frequency is 500KHz;
Figure 10: switch mosfet pipe Q gate source voltage conducting waveform when switching frequency is 500KHz;
Figure 11: switch mosfet pipe Q gate source voltage turn-offed waveform when switching frequency was 500KHz;
Among the figure: the 1-BOOST boosting unit; The 2-negative pressure drives clamp units.
Embodiment
Further describe technical scheme of the present invention below in conjunction with accompanying drawing and concrete embodiment.
Embodiment 1
Like Fig. 1, the novel low side MOSFET/IGBT negative pressure hooping position driving circuit of present embodiment, it comprises that BOOST boosting unit 1 and negative pressure drive clamp units 2.Fig. 2 is novel low side MOSFET/IGBT negative pressure hooping position driving circuit relevant parameter oscillogram, from figure, can see, in one-period, promptly from t 0-t 6During this period of time, the operation mode of switching tube Q can be divided into 6, specifically each operation mode such as Fig. 3～shown in Figure 8.
BOOST boosting unit 1 is by 14V input power supply V In, 50uf input capacitance C In, the 50uH inductance L Main, model is switch mosfet pipe Q, the diode D of FQDN10TM S, 10uF output capacitance C OutForm input power supply V with load resistance R InWith input capacitance C InParallel connection, inductance L Main, diode D SWith output capacitance C OutBack and input capacitance C successively connect InParallel connection, inductance L MainAn end be connected inductance L with the positive pole of input capacitance MainThe other end and diode D SPositive pole connect, diode D SNegative pole and output capacitance C OutPositive pole connect output capacitance C OutMinus earth, the drain electrode of switch mosfet pipe Q is connected on inductance L MainWith diode D SBetween, the source ground of switch mosfet pipe Q, load resistance R is connected in parallel on output capacitance C OutTwo ends.
Negative pressure drives clamp units 2 by 5.3V input power supply V Cc, model is the switch mosfet pipe S of FDN335N 1, S 2, S 3, S 4, the bootstrap capacitor C of 5uF 1With bootstrap capacitor C 2, diode D 1With diode D 2Form power supply V CcMinus earth, power supply V CcPositive pole and diode D 1Positive pole link to each other diode D 1Negative pole and switch mosfet pipe S 1Drain electrode connect bootstrap capacitor C 1A termination go into diode D 1Negative pole and switch mosfet pipe S 1Drain electrode between, bootstrap capacitor C 1The other end and bootstrap capacitor C 2Connect bootstrap capacitor C 2The other end with diode D 2Anodal connection, diode D 2Minus earth, switch mosfet pipe S 4Drain electrode and power supply V CcPositive pole link to each other switch mosfet pipe S 3Drain electrode be connected on capacitor C 1With C 2Between, switch mosfet pipe S 3Source electrode be connected switch mosfet pipe S with ground 4Source electrode be connected on switch mosfet pipe S 3Drain electrode on, switch mosfet pipe S 1Drain electrode and diode D 1Negative pole link to each other switch mosfet pipe S 1Source electrode link to each other switch mosfet pipe S with the grid of switch mosfet pipe Q in the BOOST boosting unit 1 2Drain electrode and switch mosfet pipe S 1Source electrode connect switch mosfet pipe S 2Source electrode be connected on capacitor C 2With diode D 2Between.
The control method of the novel low side MOSFET/IGBT negative pressure hooping position driving circuit of present embodiment the steps include:
(1) at first controls the switch mosfet pipe S of negative pressure clamp driver element 2 1With switch mosfet pipe S 4Be in conducting state, switch mosfet pipe S 2With switch mosfet pipe S 3Be in off state, at this moment power supply V CcFor 5.3V passes through switch mosfet pipe S 4Give the bootstrap capacitor C of 5uF 2Charging makes bootstrap capacitor C 2On magnitude of voltage begin charging by zero volt, finally reach 4.6V, this magnitude of voltage is to ignore switch mosfet pipe S 4Conduction voltage drop after obtain diode D wherein 2On conduction voltage drop be 0.7V; 5.3V power supply V CcThrough diode D 1With switch mosfet pipe S 1Give switch mosfet pipe Q charging in the BOOST boosting unit 1, make its conducting, charging voltage value begins to be 4.6V, and this magnitude of voltage is to ignore switch mosfet pipe S 1Conduction voltage drop after obtain diode D wherein 1On conduction voltage drop be 0.7V, the input power supply V of 14V InBegin inductance L to 50uH MainCharging is along with bootstrap capacitor C 2On the increase of magnitude of voltage, the charging voltage on the switch mosfet pipe Q also increases thereupon, finally reaches 9.2V, and is stabilized on this value.Like Fig. 3.
(2) control switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4All be in off state, because diode D 1Reverse by effect, the voltage on the switch mosfet pipe Q grid source electrode maintains 9.2V all the time and goes up constant.
(3) control switch mosfet pipe S 2With S 3Be in conducting state, and switch mosfet pipe S 1With S 4Be in off state, bootstrap capacitor C 2On polarity of voltage just in time opposite with the gate source voltage polarity on the switch mosfet pipe Q; Form back clamping; Because the voltage on the electric capacity can not suddenly change, thus the gate source voltage on the switch mosfet pipe Q will be clamped at-4.6V is last, switch mosfet pipe Q moment is turned off; The equivalent circuit diagram of this process such as Fig. 6 and shown in Figure 7, the input power supply V of 14V InInductance L with 50uH MainSimultaneously to 10uF output capacitance C OutBoost function is accomplished in charging.
(4) control switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4Be in not on-state, the electric charge on the switch mosfet pipe Q grid source electrode does not have discharge loop, thus the voltage on the switch mosfet pipe Q grid source electrode maintain-4.6V is last, the equivalent circuit diagram of this process is as shown in Figure 8.
Make that circuit work frequency is f=500KHz, switch mosfet pipe S 1And S 2, S 3And S 4Dead Time each other is 20ns.Fig. 9 is the gate-source voltage V of switch mosfet pipe Q in the BOOST boosting unit 1 CGSSimulation waveform, by figure can know, in a switch periods 2us, after switch mosfet pipe Q conducting, its gate-source voltage V CGSBe stabilized in about 9.8V, when Q turn-offs, its gate-source voltage V CGSBe clamped on-4.6V about, realized turn-offing the switch mosfet pipe, and opened the rated voltage ± 20V that all bears with cut-off signals less than the gate source voltage of switch mosfet pipe Q with negative pressure.Figure 10 is switch mosfet pipe Q conducting phase gate source voltage V in the BOOST boosting unit 1 CGSOscillogram can be known by Figure 10, the gate source voltage V of switch mosfet pipe Q CGSRise to 9.8V by-4.6V through time of about 10ns, ON time is than faster, can know that according to the on state characteristic of MOSFET driving voltage is high more, and the switching tube opening time is short more, and the switching tube conducting resistance is more little, and the switching tube performance is good more.Figure 11 is switch mosfet pipe Q off-phases gate source voltage V in the BOOST boosting unit 1 CGSOscillogram can be known by Figure 11, the gate source voltage V during switch mosfet pipe Q conducting CGSDropping to the used time of 0V by 9.8V is 2.4ns, and gate source voltage V thereafter CGSContinue to descend and finally be clamped at-4.6V, prevented effectively to mislead owing to what extraneous disturbing factor caused.In sum, than the traditional driving circuit, conducting and turn-off time that drive circuit that the present invention proposes and control method thereof can greatly reduce switching tube, reduced switching loss effectively.

Claims (3)

1. novel low side MOSFET/IGBT negative pressure hooping position driving circuit, it comprises negative pressure clamp driver element (2), described negative pressure clamp driver element (2) is connected with BOOST boosting unit (1) circuit, it is characterized in that:
Described negative pressure clamp driver element (2) is by power supply V Cc, bootstrap capacitor C 1, bootstrap capacitor C 2, diode D 1, diode D 2, switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4Form described power supply V CcMinus earth, power supply V CcPositive pole and diode D 1Positive pole link to each other diode D 1Negative pole and switch mosfet pipe S 1Drain electrode connect described bootstrap capacitor C 1A termination go into diode D 1Negative pole and switch mosfet pipe S 1Drain electrode between, bootstrap capacitor C 1The other end and bootstrap capacitor C 2Connect bootstrap capacitor C 2The other end with diode D 2Anodal connection, diode D 2Minus earth, said switch mosfet pipe S 4Drain electrode and power supply V CcPositive pole link to each other switch mosfet pipe S 3Drain electrode be connected on capacitor C 1With C 2Between, switch mosfet pipe S 3Source electrode be connected switch mosfet pipe S with ground 4Source electrode be connected on switch mosfet pipe S 3Drain electrode on, switch mosfet pipe S 1Source electrode and BOOST boosting unit (1) in the grid of switch mosfet pipe Q link to each other switch mosfet pipe S 2Drain electrode and switch mosfet pipe S 1Source electrode connect switch mosfet pipe S 2Source electrode be connected on capacitor C 2With diode D 2Between.
2. novel low side MOSFET/IGBT negative pressure hooping position driving circuit according to claim 1 is characterized in that, described BOOST boosting unit (1) is by input power supply V In, input capacitance C In, inductance L Main, switch mosfet pipe Q, diode D S, output capacitance C OutForm input power supply V with load resistance R InWith input capacitance C InParallel connection, inductance L Main, diode D SWith output capacitance C OutBack and input capacitance C successively connect InParallel connection, inductance L MainAn end and input capacitance C InPositive pole connect inductance L MainThe other end and diode D SPositive pole connect, diode D SNegative pole and output capacitance C OutPositive pole connect output capacitance C OutMinus earth, the drain electrode of switch mosfet pipe Q is connected on inductance L MainWith diode D SBetween, the source ground of switch mosfet pipe Q, said load resistance R is connected in parallel on output capacitance C OutTwo ends.
3. the control method of novel low side MOSFET/IGBT negative pressure hooping position driving circuit is given the switch mosfet pipe S in the said negative pressure clamp driver element (2) simultaneously 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4Drive signal, wherein switch mosfet pipe S 1With switch mosfet pipe S 4Drive signal identical, switch mosfet pipe S 2With switch mosfet pipe S 3Drive signal identical, switch mosfet pipe S 1With switch mosfet pipe S 2Drive signal opposite, and leave certain Dead Time between two kinds of signals, specifically may further comprise the steps:
(1) at first controls the switch mosfet pipe S of negative pressure clamp driver element (2) 1With switch mosfet pipe S 4Be in conducting state, switch mosfet pipe S 2With switch mosfet pipe S 3Be in off state, at this moment power supply V CcThrough switch mosfet pipe S 4Give bootstrap capacitor C 2Charging makes bootstrap capacitor C 2On magnitude of voltage begin charging by zero volt, finally reach U 1, U wherein D2Be diode D 2On conduction voltage drop; U 1Computing formula following:
U 1=V cc-U D2? （1）
Power supply V CcThrough diode D 1With switch mosfet pipe S 1Give switch mosfet pipe Q charging in the BOOST boosting unit (1), make its conducting, the charging voltage value that provides begins to be U 2, U wherein D1Be diode D 1On conduction voltage drop; U 2Computing formula following:
U 2=?V cc-U D1 （2）
Input power supply V InBegin inductance L MainCharging is along with bootstrap capacitor C 2On the increase of magnitude of voltage, the charging voltage on the switch mosfet pipe Q also increases thereupon, finally reaches U 3, and be stabilized on this value U 3Computing formula following:
U 3=2V cc-U D1-U D2 ?（3）
(2) control switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4All be in off state, because diode D 1Reverse by effect, the voltage on the switch mosfet pipe Q grid source electrode maintains U all the time 3Go up constant;
(3) control switch mosfet pipe S 2With S 3Be in conducting state, and switch mosfet pipe S 1With S 4Be in off state, bootstrap capacitor C 2On polarity of voltage just in time opposite with the gate source voltage polarity on the switch mosfet pipe Q, form back clamping, because the voltage on the electric capacity can not suddenly change, so the gate source voltage on the switch mosfet pipe Q will be clamped at voltage U 4On, switch mosfet pipe Q moment is turned off, input power supply V InAnd inductance L MainSimultaneously to output capacitance C OutBoost function is accomplished in charging; U 4Computing formula following:
U 4=-?V cc?+U D2 （4）
(4) control switch mosfet pipe S 1, switch mosfet pipe S 2, switch mosfet pipe S 3With switch mosfet pipe S 4Be in the state of not conducting, the electric charge on the switch mosfet pipe Q grid source electrode does not have discharge loop, so the voltage on the switch mosfet pipe Q grid source electrode maintains U 4On.
CN201210176271.3A 2012-05-31 2012-05-31 Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof Active CN102684462B (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104917359A (en) * 2015-06-01 2015-09-16 矽力杰半导体技术(杭州)有限公司 Upper switch tube driving circuit and synchronization boost circuit using the same
CN105281551A (en) * 2014-06-25 2016-01-27 西门子公司 Activating circuit of a resonant converter
CN105634275A (en) * 2016-03-23 2016-06-01 西安工业大学 Boost converter of switch inductor
CN107852159A (en) * 2015-05-27 2018-03-27 株式会社电装 Drive device
CN110061621A (en) * 2019-04-16 2019-07-26 杰华特微电子（杭州）有限公司 A kind of switching power source control circuit and method and Switching Power Supply
WO2020029540A1 (en) * 2018-08-08 2020-02-13 上海颛芯企业管理咨询合伙企业（有限合伙） Driving circuit of power switch tube and device thereof
CN111130514A (en) * 2019-12-30 2020-05-08 华为技术有限公司 Control method and control device for switching device
US11831307B2 (en) 2018-08-08 2023-11-28 Inventchip Technology Co., Ltd. Power switch drive circuit and device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0855788A1 (en) * 1997-01-23 1998-07-29 STMicroelectronics S.r.l. NMOS negative charge pump
US20090295362A1 (en) * 2008-05-27 2009-12-03 Analog Devices, Inc. Voltage boost circuit without device overstress
CN100576706C (en) * 2008-05-19 2009-12-30 深圳市联德合微电子有限公司 A kind of negative voltage outputting charge pump
CN102208805A (en) * 2010-03-31 2011-10-05 上海宏力半导体制造有限公司 Power supply clamping circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0855788A1 (en) * 1997-01-23 1998-07-29 STMicroelectronics S.r.l. NMOS negative charge pump
CN100576706C (en) * 2008-05-19 2009-12-30 深圳市联德合微电子有限公司 A kind of negative voltage outputting charge pump
US20090295362A1 (en) * 2008-05-27 2009-12-03 Analog Devices, Inc. Voltage boost circuit without device overstress
CN102208805A (en) * 2010-03-31 2011-10-05 上海宏力半导体制造有限公司 Power supply clamping circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JIZHEN FU: "Topologies and modelings of novel bipolar gate driver techniques for next-generation high frequency voltage regulators", 《QUEEN"S UNIVERSITY MASTER"S THESIS》 *

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CN105281551A (en) * 2014-06-25 2016-01-27 西门子公司 Activating circuit of a resonant converter
CN105281551B (en) * 2014-06-25 2019-02-22 西门子公司 The active circuit of resonance converter
CN107852159A (en) * 2015-05-27 2018-03-27 株式会社电装 Drive device
CN107852159B (en) * 2015-05-27 2021-03-16 株式会社电装 Drive device
CN104917359B (en) * 2015-06-01 2017-11-07 矽力杰半导体技术(杭州)有限公司 A kind of upper switch tube driving circuit and apply its synchronous boost circuits
CN104917359A (en) * 2015-06-01 2015-09-16 矽力杰半导体技术(杭州)有限公司 Upper switch tube driving circuit and synchronization boost circuit using the same
CN105634275A (en) * 2016-03-23 2016-06-01 西安工业大学 Boost converter of switch inductor
WO2020029540A1 (en) * 2018-08-08 2020-02-13 上海颛芯企业管理咨询合伙企业（有限合伙） Driving circuit of power switch tube and device thereof
US11165423B2 (en) 2018-08-08 2021-11-02 Shanghai Zhuanxin Corporation Management Consulting Partnership Power switch drive circuit and device
US11611339B2 (en) 2018-08-08 2023-03-21 Inventchip Technology Co., Ltd. Power switch drive circuit and device
US11831307B2 (en) 2018-08-08 2023-11-28 Inventchip Technology Co., Ltd. Power switch drive circuit and device
CN110061621A (en) * 2019-04-16 2019-07-26 杰华特微电子（杭州）有限公司 A kind of switching power source control circuit and method and Switching Power Supply
CN111130514A (en) * 2019-12-30 2020-05-08 华为技术有限公司 Control method and control device for switching device
CN111130514B (en) * 2019-12-30 2022-04-29 华为数字能源技术有限公司 Control method and control device for switching device

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