CN203911735U - Intelligent power module driving circuit and intelligent module - Google Patents
Intelligent power module driving circuit and intelligent module Download PDFInfo
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- CN203911735U CN203911735U CN201420247829.7U CN201420247829U CN203911735U CN 203911735 U CN203911735 U CN 203911735U CN 201420247829 U CN201420247829 U CN 201420247829U CN 203911735 U CN203911735 U CN 203911735U
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Abstract
The utility model discloses an intelligent power module driving circuit and an intelligent module. The intelligent power module driving circuit comprises a switching tube driving circuit, an IGBT switching tube, an MOS tube, a first power supply input end, a second power supply input end, a first electronic switch and a second electronic switch. The collector electrode and the emitting electrode of the IGBT switching tube are corresponding to the power supply input ends. The gate pole of the IGBT switching tube is connected with the switching tube driving circuit. The drain electrode of the MOS is connected with the collector electrode of the IGBT switching tube. The source electrode of the MOS tube is connected with the emitting electrode of the IGBT switching tube. The grating electrode of the MOS tube is connected with the first end of the first electronic switch and the first end of the second electronic switch. The second end of the first electronic switch is connected with the gate pole of the IGBT switching tube. The second end of the second electronic switch is connected with the source electrode of the MOS tube. Loss of the IGBT switching tube during low current is reduced.
Description
Technical field
The utility model relates to electronic technology field, particularly a kind of Intelligent Power Module drive circuit and Intelligent Power Module.
Background technology
Intelligent Power Module, IPM (Intelligent Power Module) is a kind of by the power drive series products of power electronics and integrated circuit technique combination.Intelligent Power Module integrates device for power switching and high-voltage driving circuit, compare with the discrete scheme of tradition, Intelligent Power Module wins increasing market with advantages such as its high integration, high reliability, be particularly suitable for frequency converter and the various inverter of drive motors, frequency control, metallurgical machinery, electric traction, servo-drive, a kind of desirable power electronic device of frequency-conversion domestic electric appliances.
Intelligent Power Module of the prior art, its inner switching tube structure normally adopts IGBT switching tube (IGBT, Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) with FWD pipe (FWD, Free Wheeling Diode, fly-wheel diode) parallel-connection structure, and due to the characteristic of this body structure of IGBT switching tube, make IGBT switching tube in low current, be difficult to reduce its loss.For the loss when the low current of the IGBT switching tube that improves Intelligent Power Module, can consider to use MOSFET pipe (MOSFET, Metal Oxide Semiconductor Field Effect Transistor, mos field effect transistor, call metal-oxide-semiconductor in the following text) replace above-mentioned IGBT switching tube, still, when adopting metal-oxide-semiconductor, there is again following problem: because the conducting voltage of high temperature, high current range uprises, so allowable current step-down.
Utility model content
Main purpose of the present utility model is to provide a kind of Intelligent Power Module drive circuit and Intelligent Power Module, the loss of the IGBT switching tube that is intended to reduce Intelligent Power Module when low current.
The utility model proposes a kind of Intelligent Power Module drive circuit, comprise switch tube driving circuit, IGBT switching tube, metal-oxide-semiconductor, the first power supply input, the second power supply input, the first electronic switch and the second electronic switch; Wherein,
The collector electrode of described IGBT switching tube is connected with described the first power supply input, and the emitter of described IGBT switching tube is connected with described the second power supply input, and the gate pole of described IGBT switching tube is connected with described switch tube driving circuit; The drain electrode of described metal-oxide-semiconductor is connected with the collector electrode of described IGBT switching tube, the source electrode of described metal-oxide-semiconductor is connected with the emitter of described IGBT switching tube, and the grid of described metal-oxide-semiconductor is connected with the first end of described the first electronic switch and the first end of described the second electronic switch respectively; The second end of described the first electronic switch is connected with the gate pole of described IGBT switching tube; The second end of described the second electronic switch is connected with the source electrode of described metal-oxide-semiconductor; The control end of the control end of described the first electronic switch and described the second electronic switch is all connected with described switch tube driving circuit.
Preferably, described metal-oxide-semiconductor is NMOS pipe.
Preferably, the threshold voltage of described metal-oxide-semiconductor is greater than the threshold voltage of described IGBT switching tube.
The utility model also proposes a kind of Intelligent Power Module drive circuit, comprises switch tube driving circuit, IGBT switching tube, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the first power supply input and the second power supply input; Wherein,
The collector electrode of described IGBT switching tube is connected with described the first power supply input, and the emitter of described IGBT switching tube is connected with described the second power supply input, and the gate pole of described IGBT switching tube is connected with described switch tube driving circuit; The drain electrode of described the first metal-oxide-semiconductor is connected with the collector electrode of described IGBT switching tube, the source electrode of described the first metal-oxide-semiconductor is connected with the emitter of described IGBT switching tube, and the grid of described the first metal-oxide-semiconductor is connected with the source electrode of described the second metal-oxide-semiconductor and the drain electrode of described the 3rd metal-oxide-semiconductor respectively; The drain electrode of described the second metal-oxide-semiconductor is connected with the gate pole of described IGBT switching tube; The source electrode of described the 3rd metal-oxide-semiconductor is connected with the source electrode of described the first metal-oxide-semiconductor; The grid of the grid of described the second metal-oxide-semiconductor and described the 3rd metal-oxide-semiconductor is all connected with described switch tube driving circuit.
Preferably, described the first metal-oxide-semiconductor is NMOS pipe.
Preferably, described the second metal-oxide-semiconductor is NMOS pipe, and described the 3rd metal-oxide-semiconductor is PMOS pipe.
Preferably, the threshold voltage of described the first metal-oxide-semiconductor is greater than the threshold voltage of described IGBT switching tube.
The utility model also proposes a kind of Intelligent Power Module, described Intelligent Power Module comprises Intelligent Power Module drive circuit, and described Intelligent Power Module drive circuit comprises switch tube driving circuit, IGBT switching tube, metal-oxide-semiconductor, the first power supply input, the second power supply input, the first electronic switch and the second electronic switch; Wherein,
The collector electrode of described IGBT switching tube is connected with described the first power supply input, and the emitter of described IGBT switching tube is connected with described the second power supply input, and the gate pole of described IGBT switching tube is connected with described switch tube driving circuit; The drain electrode of described metal-oxide-semiconductor is connected with the collector electrode of described IGBT switching tube, the source electrode of described metal-oxide-semiconductor is connected with the emitter of described IGBT switching tube, and the grid of described metal-oxide-semiconductor is connected with the first end of described the first electronic switch and the first end of described the second electronic switch respectively; The second end of described the first electronic switch is connected with the gate pole of described IGBT switching tube; The second end of described the second electronic switch is connected with the source electrode of described metal-oxide-semiconductor; The control end of the control end of described the first electronic switch and described the second electronic switch is all connected with described switch tube driving circuit.
The utility model also proposes a kind of Intelligent Power Module, described Intelligent Power Module comprises Intelligent Power Module drive circuit, and described Intelligent Power Module drive circuit comprises switch tube driving circuit, IGBT switching tube, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the first power supply input and the second power supply input; Wherein,
The collector electrode of described IGBT switching tube is connected with described the first power supply input, and the emitter of described IGBT switching tube is connected with described the second power supply input, and the gate pole of described IGBT switching tube is connected with described switch tube driving circuit; The drain electrode of described the first metal-oxide-semiconductor is connected with the collector electrode of described IGBT switching tube, the source electrode of described the first metal-oxide-semiconductor is connected with the emitter of described IGBT switching tube, and the grid of described the first metal-oxide-semiconductor is connected with the source electrode of described the second metal-oxide-semiconductor and the drain electrode of described the 3rd metal-oxide-semiconductor respectively; The drain electrode of described the second metal-oxide-semiconductor is connected with the gate pole of described IGBT switching tube; The source electrode of described the 3rd metal-oxide-semiconductor is connected with the source electrode of described the first metal-oxide-semiconductor; The grid of the grid of described the second metal-oxide-semiconductor and described the 3rd metal-oxide-semiconductor is all connected with described switch tube driving circuit.
The Intelligent Power Module drive circuit the utility model proposes, comprises switch tube driving circuit, IGBT switching tube, metal-oxide-semiconductor, the first power supply input, the second power supply input, the first electronic switch and the second electronic switch.Wherein, the collector electrode of IGBT switching tube is connected with the first power supply input, and the emitter of IGBT switching tube is connected with the second power supply input, and the gate pole of IGBT switching tube is connected with switch tube driving circuit; The drain electrode of metal-oxide-semiconductor is connected with the collector electrode of IGBT switching tube, and the source electrode of metal-oxide-semiconductor is connected with the emitter of IGBT switching tube, and the grid of metal-oxide-semiconductor is connected with the first end of the first electronic switch and the first end of the second electronic switch respectively; The second end of the first electronic switch is connected with the gate pole of IGBT switching tube; The second end of the second electronic switch is connected with the source electrode of metal-oxide-semiconductor; The control end of the control end of the first electronic switch and the second electronic switch is all connected with switch tube driving circuit.FWD pipe (fly-wheel diode) in the Intelligent Power Module drive circuit of the alternative prior art of the utility model Intelligent Power Module drive circuit employing metal-oxide-semiconductor, on-off action when this metal-oxide-semiconductor in the utility model can play low current, afterflow effect in the time of playing high electric current is again (during high electric current, this metal-oxide-semiconductor has substituted FWD pipe of the prior art), the loss of the IGBT switching tube that has reduced Intelligent Power Module when low current, has improved the efficiency of Intelligent Power Module.Meanwhile, the utility model also has advantages of simple in structure and easy realization.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of the utility model Intelligent Power Module drive circuit the first embodiment;
Fig. 2 is the scheme of installation of IGBT switching tube and metal-oxide-semiconductor in the utility model Intelligent Power Module drive circuit the first embodiment;
Fig. 3 is the circuit structure diagram of the utility model Intelligent Power Module drive circuit the second embodiment.
The realization of the utility model object, functional characteristics and advantage, in connection with embodiment, are described further with reference to accompanying drawing.
Embodiment
Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
The utility model proposes a kind of Intelligent Power Module drive circuit.
With reference to Fig. 1, Fig. 1 is the circuit structure diagram of the utility model Intelligent Power Module drive circuit the first embodiment.
Intelligent Power Module drive circuit in the present embodiment comprises switch tube driving circuit 101, IGBT switching tube 102, metal-oxide-semiconductor 103, the first power supply input 104, the second power supply input 105, the first electronic switch S1 and the second electronic switch S2.
Particularly, the collector electrode of IGBT switching tube 102 is connected with the first power supply input 104, the emitter of IGBT switching tube 102 is connected with the second power supply input 105, and the gate pole of IGBT switching tube 102 is connected with the drive output OUT of switch tube driving circuit 101; The drain electrode of metal-oxide-semiconductor 103 is connected with the collector electrode of IGBT switching tube 102, and the source electrode of metal-oxide-semiconductor 103 is connected with the emitter of IGBT switching tube 102, and the grid of metal-oxide-semiconductor 103 is connected with the first end of the first electronic switch S1 and the first end of the second electronic switch S2 respectively; The second end of the first electronic switch S1 is connected with the gate pole of IGBT switching tube 102; The second end of the second electronic switch S2 is connected with the source electrode of metal-oxide-semiconductor 103; The control end of the control end of the first electronic switch S1 and the second electronic switch S2 is all connected (not shown) with switch tube driving circuit 101, and switch tube driving circuit 101 is controlled disconnection and the closed condition of the first electronic switch S1 and the second electronic switch S2.
In the present embodiment, above-mentioned the first electronic switch S1 and the second electronic switch S2 can be integrated in the inside of above-mentioned switch tube driving circuit 101.
In the present embodiment, above-mentioned metal-oxide-semiconductor 103 is NMOS pipe.The threshold voltage of metal-oxide-semiconductor 103 is greater than the threshold voltage of IGBT switching tube 102.The threshold voltage of metal-oxide-semiconductor 103 is greater than the threshold voltage of IGBT switching tube 102, in the time of can suppressing IGBT switching tube 102 switch, flows into the electric current of metal-oxide-semiconductor 103, thereby can suppress the temperature rising of metal-oxide-semiconductor 103.The threshold voltage of the threshold voltage of metal-oxide-semiconductor 103 and IGBT switching tube 102, can be during fabrication, and the difference of the magazine amount of injecting by its raceway groove is set its different threshold voltage.
Intelligent Power Module drive circuit in the present embodiment, when being operated in low current district, the corresponding control signal of switch tube driving circuit 101 output, control the first electronic switch S1 closed, control the second electronic switch S2 and disconnect, the grid of metal-oxide-semiconductor 103 is connected with the gate pole of IGBT switching tube 102.Then, the driving signal that the drive output OUT of switch tube driving circuit 101 exports becomes high potential " H " from electronegative potential " L ", the threshold voltage that is greater than IGBT switching tube 102 due to the threshold voltage of metal-oxide-semiconductor 103 is high, therefore, when the driving signal of exporting as the drive output OUT of switch tube driving circuit 101 becomes high potential " H " from electronegative potential " L ", the first conducting of IGBT switching tube 102, metal-oxide-semiconductor 103 conducting again, therefore, the current spike producing in switch on and off moment of IGBT switching tube 102 flows in metal-oxide-semiconductor 103 hardly, thereby the temperature that has suppressed metal-oxide-semiconductor 103 rises.And after metal-oxide-semiconductor 103 conductings, low current Main Current is crossed metal-oxide-semiconductor 103, IGBT switching tube 102 is inflow current hardly, thereby has reduced the loss of IGBT switching tube 102 when low current.
When the driving signal of exporting as the drive output OUT of switch tube driving circuit 101 becomes " L " from " H ", because the threshold voltage of metal-oxide-semiconductor 103 is greater than the threshold voltage of IGBT switching tube 102, therefore metal-oxide-semiconductor 103 first turn-offs, the electric current of metal-oxide-semiconductor 103 starts to decline, afterwards, IGBT switching tube 102 turn-offs again, the current cut-off of IGBT switching tube 102.When the driving signal of exporting due to the drive output OUT when switch tube driving circuit 101 becomes " L " from " H ", metal-oxide-semiconductor 103 first turn-offs, therefore, now whole electric currents all flows in the IGBT of conducting state switching tube 102, electric current does not flow into metal-oxide-semiconductor 103, thereby has suppressed the temperature rising of metal-oxide-semiconductor 103.
When being operated in high Current Zone, the corresponding control signal of switch tube driving circuit 101 output, controlling the first electronic switch S1 disconnects, control the second electronic switch S2 closed, the grid of metal-oxide-semiconductor 103 is connected with source electrode, now metal-oxide-semiconductor 103 serves as the effect of FWD pipe (fly-wheel diode), now, high electric current only flows through IGBT switching tube 102, and now due to the afterflow effect of metal-oxide-semiconductor 103, thereby avoided IGBT switching tube 102 puncture or damage because of what high pressure caused.
Fig. 2 is the scheme of installation of IGBT switching tube and metal-oxide-semiconductor in the utility model Intelligent Power Module drive circuit the first embodiment.
See figures.1.and.2 in the lump, when the production of Intelligent Power Module, the IGBT switching tube 102 in the present embodiment Intelligent Power Module drive circuit is located in the first lead frame portion 300, and metal-oxide-semiconductor 103 is located in the second lead frame portion 400.And the first lead frame portion 300 and the second lead frame portion 400 have certain difference in height.Meanwhile, the back side of the first lead frame portion 300 is provided with radiating insulating sheet 500, and the back side of the second lead frame portion 400 does not need to arrange radiating insulating sheet.
The Intelligent Power Module drive circuit that the present embodiment proposes, comprises switch tube driving circuit, IGBT switching tube, metal-oxide-semiconductor, the first power supply input, the second power supply input, the first electronic switch and the second electronic switch.Wherein, the collector electrode of IGBT switching tube is connected with the first power supply input, and the emitter of IGBT switching tube is connected with the second power supply input, and the gate pole of IGBT switching tube is connected with switch tube driving circuit; The drain electrode of metal-oxide-semiconductor is connected with the collector electrode of IGBT switching tube, and the source electrode of metal-oxide-semiconductor is connected with the emitter of IGBT switching tube, and the grid of metal-oxide-semiconductor is connected with the first end of the first electronic switch and the first end of the second electronic switch respectively; The second end of the first electronic switch is connected with the gate pole of IGBT switching tube; The second end of the second electronic switch is connected with the source electrode of metal-oxide-semiconductor; The control end of the control end of the first electronic switch and the second electronic switch is all connected with switch tube driving circuit.FWD pipe (fly-wheel diode) in the Intelligent Power Module drive circuit of the alternative prior art of the present embodiment Intelligent Power Module drive circuit employing metal-oxide-semiconductor, on-off action when this metal-oxide-semiconductor in the present embodiment can play low current, afterflow effect in the time of playing high electric current is again (during high electric current, this metal-oxide-semiconductor has substituted FWD pipe of the prior art), the loss of the IGBT switching tube that has reduced Intelligent Power Module when low current, has improved the efficiency of Intelligent Power Module.Meanwhile, the present embodiment also has advantages of simple in structure and easy realization.
Fig. 3 is the circuit structure diagram of the utility model Intelligent Power Module drive circuit the second embodiment.
With reference to Fig. 3, the utility model Intelligent Power Module drive circuit comprises switch tube driving circuit 201, IGBT switching tube 202, the first metal-oxide-semiconductor 203, the second metal-oxide-semiconductor 206, the 3rd metal-oxide-semiconductor 207, the first power supply input 204 and the second power supply input 205.
Particularly, the collector electrode of IGBT switching tube 202 is connected with the first power supply input 204, the emitter of IGBT switching tube 202 is connected with the second power supply input 205, and the gate pole of IGBT switching tube 202 is connected with the drive output OUT1 of switch tube driving circuit 201; The drain electrode of the first metal-oxide-semiconductor 203 is connected with the collector electrode of IGBT switching tube 202, and the source electrode of the first metal-oxide-semiconductor 203 is connected with the emitter of IGBT switching tube 202,
The grid of the first metal-oxide-semiconductor 203 is connected with the source electrode of the second metal-oxide-semiconductor 206 and the drain electrode of the 3rd metal-oxide-semiconductor 207 respectively; The drain electrode of the second metal-oxide-semiconductor 206 is connected with the gate pole of IGBT switching tube 202; The source electrode of the 3rd metal-oxide-semiconductor 207 is connected with the source electrode of the first metal-oxide-semiconductor 203; The grid of the grid of the second metal-oxide-semiconductor 206 and the 3rd metal-oxide-semiconductor 207 is all connected with the control signal output OUT2 of switch tube driving circuit 201, the corresponding control signal of switch tube driving circuit 201 output, cut-off and the conducting state of control the second metal-oxide-semiconductor 206 and the 3rd metal-oxide-semiconductor 207.
In the present embodiment, the first metal-oxide-semiconductor 203 and the second metal-oxide-semiconductor 206 are NMOS pipe, and the 3rd metal-oxide-semiconductor 207 is PMOS pipe.The threshold voltage of the first metal-oxide-semiconductor 203 is greater than the threshold voltage of IGBT switching tube 202.
Intelligent Power Module drive circuit in the present embodiment, the control signal IN2 that switch tube driving circuit 201 is inputted determines the function (on-off action or afterflow effect) of the first metal-oxide-semiconductor 203.When the present embodiment Intelligent Power Module drive circuit works is during in low current district, when the control signal IN2 that switch tube driving circuit 201 is inputted becomes " H " from " L ", be the control signal exported of the control signal output OUT2 of switch tube driving circuit 201 when " L " becomes " H ", now the second metal-oxide-semiconductor 206 conductings, make the grid of the first metal-oxide-semiconductor 203 and the grid short circuit of IGBT switching tube 202, at this moment driving signal IN1 switch tube driving circuit 201 being inputted becomes " H " from " L ", be that the driving signal that the drive output OUT1 of switch tube driving circuit 201 exports becomes " H " from " L ", because the threshold voltage of the first metal-oxide-semiconductor 203 is greater than the threshold voltage of IGBT switching tube 202, therefore, the first conducting of IGBT switching tube 202, then the first metal-oxide-semiconductor 203 conducting again, now low current Main Current is crossed the first metal-oxide-semiconductor 203, thereby reduced the loss of IGBT switching tube 202 when low current.
When the driving signal of exporting as the drive output OUT1 of switch tube driving circuit 201 becomes " L " from " H ", because the threshold voltage of the first metal-oxide-semiconductor 203 is greater than the threshold voltage of IGBT switching tube 202, therefore the first metal-oxide-semiconductor 203 first turn-offs, the electric current of the first metal-oxide-semiconductor 203 starts to decline, afterwards, IGBT switching tube 202 turn-offs again, the current cut-off of IGBT switching tube 202.When the driving signal of exporting due to the drive output OUT1 when switch tube driving circuit 201 becomes " L " from " H ", the first metal-oxide-semiconductor 203 first turn-offs, therefore, now whole electric currents all flows in the IGBT of conducting state switching tube 202, electric current does not flow into the first metal-oxide-semiconductor 203, thereby has suppressed the temperature rising of the first metal-oxide-semiconductor 203.
Intelligent Power Module drive circuit in the present embodiment, when being operated in high Current Zone, the control signal IN2 that switch tube driving circuit 201 is inputted becomes " L " from " H ", be that the control signal that the control signal output OUT2 of switch tube driving circuit 201 exports becomes " L " from " H ", now the 3rd metal-oxide-semiconductor 207 conductings, the grid of the first metal-oxide-semiconductor 203 is connected with source electrode, now the first metal-oxide-semiconductor 203 serves as the effect of FWD pipe (fly-wheel diode), now high electric current only flows through IGBT switching tube 202, and now due to the afterflow effect of the first metal-oxide-semiconductor 203, thereby avoided IGBT switching tube 202 puncture or damage because of what high pressure caused.
The Intelligent Power Module drive circuit that the present embodiment proposes, comprises switch tube driving circuit, IGBT switching tube, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the first power supply input and the second power supply input.Wherein, the collector electrode of IGBT switching tube is connected with the first power supply input, and the emitter of IGBT switching tube is connected with the second power supply input, and the gate pole of IGBT switching tube is connected with switch tube driving circuit; The drain electrode of the first metal-oxide-semiconductor is connected with the collector electrode of IGBT switching tube, and the source electrode of the first metal-oxide-semiconductor is connected with the emitter of IGBT switching tube, and the grid of the first metal-oxide-semiconductor is connected with the source electrode of the second metal-oxide-semiconductor and the drain electrode of the 3rd metal-oxide-semiconductor respectively; The drain electrode of the second metal-oxide-semiconductor is connected with the gate pole of IGBT switching tube; The source electrode of the 3rd metal-oxide-semiconductor is connected with the source electrode of the first metal-oxide-semiconductor; The grid of the grid of the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor is all connected with switch tube driving circuit.The present embodiment Intelligent Power Module drive circuit adopts the first metal-oxide-semiconductor to substitute the FWD pipe (fly-wheel diode) in the Intelligent Power Module drive circuit of prior art, on-off action when the first metal-oxide-semiconductor of this in the present embodiment can play low current, afterflow effect in the time of playing high electric current is again (during high electric current, this first metal-oxide-semiconductor has substituted FWD pipe of the prior art), the loss of the IGBT switching tube that has reduced Intelligent Power Module when low current, has improved the efficiency of Intelligent Power Module.Meanwhile, the present embodiment also has advantages of simple in structure and easy realization.
The utility model also provides a kind of Intelligent Power Module, and this Intelligent Power Module comprises Intelligent Power Module drive circuit, and the circuit structure of this Intelligent Power Module drive circuit can, with reference to above-described embodiment, not repeat them here.Naturally, because the Intelligent Power Module of the present embodiment has adopted the technical scheme of above-mentioned Intelligent Power Module drive circuit, so this Intelligent Power Module has all beneficial effects of above-mentioned Intelligent Power Module drive circuit.
The foregoing is only preferred embodiment of the present utility model; not thereby limit the scope of the claims of the present utility model; every equivalent structure or conversion of equivalent flow process that utilizes the utility model specification and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (8)
1. an Intelligent Power Module drive circuit, is characterized in that, comprises switch tube driving circuit, IGBT switching tube, metal-oxide-semiconductor, the first power supply input, the second power supply input, the first electronic switch and the second electronic switch; Wherein,
The collector electrode of described IGBT switching tube is connected with described the first power supply input, and the emitter of described IGBT switching tube is connected with described the second power supply input, and the gate pole of described IGBT switching tube is connected with described switch tube driving circuit; The drain electrode of described metal-oxide-semiconductor is connected with the collector electrode of described IGBT switching tube, the source electrode of described metal-oxide-semiconductor is connected with the emitter of described IGBT switching tube, and the grid of described metal-oxide-semiconductor is connected with the first end of described the first electronic switch and the first end of described the second electronic switch respectively; The second end of described the first electronic switch is connected with the gate pole of described IGBT switching tube; The second end of described the second electronic switch is connected with the source electrode of described metal-oxide-semiconductor; The control end of the control end of described the first electronic switch and described the second electronic switch is all connected with described switch tube driving circuit.
2. Intelligent Power Module drive circuit according to claim 1, is characterized in that, described metal-oxide-semiconductor is NMOS pipe.
3. Intelligent Power Module drive circuit according to claim 2, is characterized in that, the threshold voltage of described metal-oxide-semiconductor is greater than the threshold voltage of described IGBT switching tube.
4. an Intelligent Power Module drive circuit, is characterized in that, comprises switch tube driving circuit, IGBT switching tube, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the first power supply input and the second power supply input; Wherein,
The collector electrode of described IGBT switching tube is connected with described the first power supply input, and the emitter of described IGBT switching tube is connected with described the second power supply input, and the gate pole of described IGBT switching tube is connected with described switch tube driving circuit; The drain electrode of described the first metal-oxide-semiconductor is connected with the collector electrode of described IGBT switching tube, the source electrode of described the first metal-oxide-semiconductor is connected with the emitter of described IGBT switching tube, and the grid of described the first metal-oxide-semiconductor is connected with the source electrode of described the second metal-oxide-semiconductor and the drain electrode of described the 3rd metal-oxide-semiconductor respectively; The drain electrode of described the second metal-oxide-semiconductor is connected with the gate pole of described IGBT switching tube; The source electrode of described the 3rd metal-oxide-semiconductor is connected with the source electrode of described the first metal-oxide-semiconductor; The grid of the grid of described the second metal-oxide-semiconductor and described the 3rd metal-oxide-semiconductor is all connected with described switch tube driving circuit.
5. Intelligent Power Module drive circuit according to claim 4, is characterized in that, described the first metal-oxide-semiconductor is NMOS pipe.
6. Intelligent Power Module drive circuit according to claim 5, is characterized in that, described the second metal-oxide-semiconductor is NMOS pipe, and described the 3rd metal-oxide-semiconductor is PMOS pipe.
7. Intelligent Power Module drive circuit according to claim 6, is characterized in that, the threshold voltage of described the first metal-oxide-semiconductor is greater than the threshold voltage of described IGBT switching tube.
8. an Intelligent Power Module, is characterized in that, comprises the Intelligent Power Module drive circuit described in any one in claim 1 to 7.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106200754A (en) * | 2016-08-30 | 2016-12-07 | 四川蜀旺新能源股份有限公司 | A kind of photovoltaic generating system maximum power tracking device |
| CN106849729A (en) * | 2017-03-23 | 2017-06-13 | 广东美的制冷设备有限公司 | SPM and air-conditioner |
| WO2018095286A1 (en) * | 2016-11-28 | 2018-05-31 | 深圳市道通智能航空技术有限公司 | Electronic speed controller integrated circuit and unmanned aerial vehicle |
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2014
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106200754A (en) * | 2016-08-30 | 2016-12-07 | 四川蜀旺新能源股份有限公司 | A kind of photovoltaic generating system maximum power tracking device |
| WO2018095286A1 (en) * | 2016-11-28 | 2018-05-31 | 深圳市道通智能航空技术有限公司 | Electronic speed controller integrated circuit and unmanned aerial vehicle |
| CN106849729A (en) * | 2017-03-23 | 2017-06-13 | 广东美的制冷设备有限公司 | SPM and air-conditioner |
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