CN205864238U - A kind of driving structure solving half-bridge topology IGBT the Miller effect - Google Patents
A kind of driving structure solving half-bridge topology IGBT the Miller effect Download PDFInfo
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- CN205864238U CN205864238U CN201620800660.2U CN201620800660U CN205864238U CN 205864238 U CN205864238 U CN 205864238U CN 201620800660 U CN201620800660 U CN 201620800660U CN 205864238 U CN205864238 U CN 205864238U
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Abstract
A kind of driving structure solving half-bridge topology IGBT the Miller effect, including pulse transformer and be arranged on the diode D1 of pulse transformer secondary, diode D2, resistance R1, resistance R2, resistance RON1, resistance RON2, IGBT1, IGBT2, described diode D1 and described diode D2 is Schottky diode, described diode D1 connect with resistance R1 after inverse parallel at described resistance RON1 two ends, connect the gate pole of IGBT1 after parallel connection；Described diode D2 connect with described resistance R2 after inverse parallel at described resistance RON2 two ends, connect the gate pole of IGBT2 after parallel connection, the grounded emitter of described IGBT2, the colelctor electrode of IGBT2 connects the emitter stage of IGBT1.Compared with prior art, the driving structure of solution half-bridge topology IGBT the Miller effect of the present utility model, the Miller effect can be efficiently reduced, eliminate in circuit the impact of the IGBT pipe conducting moment grid voltage by the miller capacitance of parasitism on another pipe, circuit structure is simple, and exploitativeness is strong.
Description
Technical field
This utility model relates to half-bridge topology technical field, solves half-bridge topology IGBT Miller effect particularly to one
The driving structure answered.
Background technology
In half-bridge topology, when IGBT1 opens, the dv/dt of instantaneous variation is due to following IGBT2 parasitism miller capacitance
The relation of Ccg can produce an electric current between the C pole Ccg gate-drive resistance Ron of IGBT2, and produces on Ron
A raw voltage, has the risk making IGBT2 turn on；
In like manner, moment is turned at IGBT2, owing to the parasitic miller capacitance Cge of IGBT1 also can be in the E pole of IGBT1
Produce electric current between Cge Ron, and on Ron, produce voltage, have the risk making IGBT1 turn on.
Utility model content
The purpose of this utility model is contemplated to solve the problems referred to above, it is provided that a kind of solution half-bridge topology IGBT the Miller effect
Driving structure.
The technical solution of the utility model is achieved in that
A kind of driving structure solving half-bridge topology IGBT the Miller effect, including pulse transformer and be arranged on pulse become
The diode D1 of depressor secondary, diode D2, resistance R1, resistance R2, resistance RON1, resistance RON2, IGBT1, IGBT2, described
Diode D1 and described diode D2 is Schottky diode, described diode D1 connect with resistance R1 after inverse parallel at described electricity
Resistance RON1 two ends, connect the gate pole of IGBT1 after parallel connection；Described diode D2 connect with described resistance R2 after inverse parallel at described electricity
Resistance RON2 two ends, connect the gate pole of IGBT2, the grounded emitter of described IGBT2 after parallel connection, the colelctor electrode of IGBT2 connects IGBT1
Emitter stage.
Preferably, it is connected between the emitter stage of described IGBT1 and gate pole and has electric capacity C1, the emitter stage of described IGBT2 and door
Connect between pole and have electric capacity C2.
Preferably, the capacity of described electric capacity C1 and electric capacity C2 is respectively 10nF.
Compared with prior art, this utility model has a following beneficial effect: solution half-bridge topology IGBT of the present utility model
The driving structure of the Miller effect, can efficiently reduce the Miller effect, eliminates an IGBT pipe in circuit and turns on moment by posting
Raw miller capacitance and the impact of grid voltage on another pipe, circuit structure is simple, and exploitativeness is strong.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of this utility model embodiment one；
Fig. 2 is the circuit diagram of this utility model embodiment two.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, this utility model is clearly and completely described.
As it is shown in figure 1, embodiment one, a kind of driving structure solving half-bridge topology IGBT the Miller effect, become including pulse
Depressor and be arranged on the diode D1 of pulse transformer secondary, diode D2, resistance R1, resistance R2, resistance RON1, resistance
RON2, IGBT1, IGBT2, described diode D1 and described diode D2 are Schottky diodes, described resistance RON1 and described
Resistance RON2 is gate-drive resistance, described diode D1 connect with resistance R1 after inverse parallel in described resistance RON1 two ends, institute
State resistance R1 in parallel with described resistance RON1 formed equivalence gate-drive resistance, connect the gate pole of IGBT1 after parallel connection；Described two poles
Pipe D2 connect with described resistance R2 after inverse parallel at described resistance RON2 two ends, described resistance R2 and described resistance RON2 shape in parallel
Become equivalence gate-drive resistance, after parallel connection, connect the gate pole of IGBT2, the grounded emitter of described IGBT2, the colelctor electrode of IGBT2
Connect the emitter stage of IGBT1.As in figure 2 it is shown, embodiment two, it is connected between the emitter stage of described IGBT1 and gate pole and has electric capacity C1,
Being connected between the emitter stage of described IGBT2 and gate pole and have electric capacity C2, described electric capacity C1 can play reduction Miller as electric capacity C2
The effect of effect.The capacity of described electric capacity C1 and electric capacity C2 is respectively 10nF.
Circuit theory: be connected in reverse parallel in the two ends of Ron with small resistor after being connected by Schottky diode, makes IGBT turn off
Time equivalent gate-drive resistance Roff significantly reduce, the electric current so flow through by miller capacitance voltage on Roff
Will significantly reduce, be unlikely to make another IGBT turn on.Wherein, resistance sizes arrangement is R/Ron < < Ron.And and
The electric capacity of the 10nF that G-E end is in parallel can also divide to fall a part to flow through the electric current of Roff, is thus unlikely to make IGBT turn on.
Structure the most of the present utility model understands with principle, solution half-bridge topology IGBT the Miller effect of the present utility model
Drive structure, the Miller effect can be efficiently reduced, eliminate an IGBT pipe conducting moment in circuit electric by parasitic Miller
Holding and the impact of grid voltage on another pipe, circuit structure is simple, and exploitativeness is strong.
Claims (3)
1. the driving structure solving half-bridge topology IGBT the Miller effect, it is characterised in that include pulse transformer and set
Put the diode D1 of pulse transformer secondary, diode D2, resistance R1, resistance R2, resistance RON1, resistance RON2, IGBT1,
IGBT2, described diode D1 and described diode D2 are Schottky diodes, described diode D1 after connecting with resistance R1 anti-the most also
It is associated in described resistance RON1 two ends, after parallel connection, connects the gate pole of IGBT1；Described diode D2 after connecting with described resistance R2 anti-the most also
It is associated in described resistance RON2 two ends, after parallel connection, connects the gate pole of IGBT2, the grounded emitter of described IGBT2, the current collection of IGBT2
Pole connects the emitter stage of IGBT1.
2. the driving structure solving half-bridge topology IGBT the Miller effect as claimed in claim 1, it is characterised in that described
Being connected between the emitter stage of IGBT1 and gate pole and have electric capacity C1, being connected between the emitter stage of described IGBT2 and gate pole has electric capacity C2.
3. the driving structure solving half-bridge topology IGBT the Miller effect as claimed in claim 2, it is characterised in that described electric capacity
The capacity of C1 and electric capacity C2 is respectively 10nF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620800660.2U CN205864238U (en) | 2016-07-27 | 2016-07-27 | A kind of driving structure solving half-bridge topology IGBT the Miller effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620800660.2U CN205864238U (en) | 2016-07-27 | 2016-07-27 | A kind of driving structure solving half-bridge topology IGBT the Miller effect |
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| CN205864238U true CN205864238U (en) | 2017-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620800660.2U Active CN205864238U (en) | 2016-07-27 | 2016-07-27 | A kind of driving structure solving half-bridge topology IGBT the Miller effect |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092493A (en) * | 2017-12-26 | 2018-05-29 | 南京工程学院 | A kind of SiC MOSFET series circuits |
| CN108599749A (en) * | 2018-08-06 | 2018-09-28 | 杭州飞仕得科技有限公司 | The two poles of the earth clamp circuit for the protection of half-bridge circuit gate pole and its application |
-
2016
- 2016-07-27 CN CN201620800660.2U patent/CN205864238U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092493A (en) * | 2017-12-26 | 2018-05-29 | 南京工程学院 | A kind of SiC MOSFET series circuits |
| CN108092493B (en) * | 2017-12-26 | 2020-12-25 | 南京工程学院 | SiC MOSFET series circuit |
| CN108599749A (en) * | 2018-08-06 | 2018-09-28 | 杭州飞仕得科技有限公司 | The two poles of the earth clamp circuit for the protection of half-bridge circuit gate pole and its application |
| CN108599749B (en) * | 2018-08-06 | 2023-09-08 | 杭州飞仕得科技股份有限公司 | Two-pole clamping circuit for half-bridge circuit gate protection and application thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191028 Address after: 274032 No. 1588, Nanjing Road, Heze Development Zone, Shandong Patentee after: SHANDONG SINODOD ELECTRONIC TECHNOLOGY CO., LTD. Address before: 311228 Linjiang Industrial Park, Xiaoshan District, Zhejiang, 2977, No. six, Hangzhou Patentee before: Hangzhou Sinodod Electric Co., Ltd. |