CN205232015U - Synchronization of MOS pipe is from drive circuit - Google Patents
Synchronization of MOS pipe is from drive circuit Download PDFInfo
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- CN205232015U CN205232015U CN201521018806.XU CN201521018806U CN205232015U CN 205232015 U CN205232015 U CN 205232015U CN 201521018806 U CN201521018806 U CN 201521018806U CN 205232015 U CN205232015 U CN 205232015U
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Abstract
The utility model discloses a synchronization of MOS pipe is from drive circuit, including triode Q2, triode Q3, triode Q4, diode D1, resistance R3, resistance R4, auxiliary electrical power source vcc. Through adopting the utility model provides a synchronization of MOS pipe is from drive circuit has replaced the high control chip of original price to come for the driven MOS of synchronous Rectifier pipe provides synchronous from drive signal, its commonality is strong, can be applied to different topological structure circuit, more has practical value.
Description
Technical field
The utility model relates to Switching Power Supply, particularly relates to a kind of synchronous driving circuit of metal-oxide-semiconductor.
Background technology
At present when output voltage lower (being less than 60V), replace the synchronous rectification scheme of diode rectification with metal-oxide-semiconductor, the conversion efficiency of power supply can be significantly improved.And conventional metal-oxide-semiconductor synchronous rectification driving circuit, the general special chip that adopts controls, and it is with high costs, and different topological structures needs to use different synchronous rectification drived control chips, and namely the versatility of conventional scheme is not strong.
In view of the defect that above-mentioned existing driven metal-oxide-semiconductor synchronous rectification driving circuit exists, the present inventor is based on being engaged in this type of product engineering application practical experience abundant for many years and professional knowledge, and coordinate the utilization of scientific principle, actively in addition research and innovation, to founding a kind of synchronous driving circuit of driven metal-oxide-semiconductor, it is made to have more practicality.
Utility model content
A kind of synchronous driving circuit of driven metal-oxide-semiconductor is provided in the utility model, instead of the high control chip of original price for the driven metal-oxide-semiconductor of synchronous rectification provides synchronous self-driven signal, its highly versatile, can be applicable to, in different topological structures, have more practical value.
The technical scheme that the utility model is taked is: a kind of synchronous driving circuit of metal-oxide-semiconductor, comprises triode Q2, triode Q3, triode Q4, diode D1, resistance R3, resistance R4, accessory power supply Vcc;
Wherein there are two symmetrical NPN triode Q21 and Q22 the inside of triode Q2, and there are two symmetrical diode D11 and D12 the inside of diode D1;
The base stage B1 of triode Q21, the base stage B2 of triode Q22 form connected node after being connected with collector electrode C2, and connected node is connected with accessory power supply Vcc positive pole by resistance R3; The emitter E 1 of triode Q21 is connected with the anode of diode D11; The emitter E 2 that Q22 stated by institute's triode is connected with the anode of diode D12; The collector electrode C1 of triode Q21 is connected with accessory power supply Vcc positive pole by resistance R4;
The base stage B3 of triode Q3 is connected with collector electrode C1 with the connected node of the base stage B4 of triode Q4; The emitter E 3 of triode Q3 is connected with the grid G of driven metal-oxide-semiconductor with the connected node of the emitter E 4 of triode Q4; The collector electrode C4 of triode Q4 is connected with accessory power supply Vcc positive pole; The collector electrode C3 of triode Q3, the negative electrode of diode D11 are connected by same node with the source S of driven metal-oxide-semiconductor; The negative electrode of diode D12 is connected with the drain D of driven metal-oxide-semiconductor;
Accessory power supply Vcc negative pole is connected with the source S of driven metal-oxide-semiconductor.
Further, the electrical characteristic of described triode Q21 with Q22 is identical.
Further, the electrical characteristic of described diode D11 with D12 is identical.
Further, triode Q3 is PNP triode, and triode Q4 is NPN triode.
Further, the synchronous driving circuit of driven metal-oxide-semiconductor also comprises diode D2, the anode of diode D2 is connected with the base stage B2 of the base stage B1 of triode Q21, triode Q22 and the connected node of collector electrode C2 three, and the negative electrode of diode D2 is connected with collector electrode C1.
Further, the base stage B3 of triode Q3 is connected with the source S of driven metal-oxide-semiconductor by resistance R2 with the connected node of the base stage B4 of triode Q4.
Further, resistance R1 is also provided with between the connected node of the emitter E 3 of triode Q3 and the emitter E 4 of triode Q4 and the grid G of driven metal-oxide-semiconductor.
Further, accessory power supply Vcc is provided with decoupling capacitor C, and decoupling capacitor C one end is connected with accessory power supply Vcc positive pole, and the other end is connected with the source S of driven metal-oxide-semiconductor.
Further, the magnitude of voltage between the source S of accessory power supply Vcc negative pole and driven metal-oxide-semiconductor is between+3.3V ~+20V.
After have employed technique scheme, the utility model has following beneficial effect:
1, the synchronous driving circuit of driven metal-oxide-semiconductor in the utility model instead of the high synchronous rectification control chip of original price for devices provides synchronous self-driven signal, while reducing costs, enhance its versatility, can be applicable to, in different topological structures, have more practical value;
2, driven metal-oxide-semiconductor drive singal follows the curent change of the Drain-Source of driven metal-oxide-semiconductor, the situation of wrong driving can not occur, when namely driven metal-oxide-semiconductor needs conducting, just has drive singal generation; When not needing conducting, then do not have drive singal and produce, make circuit working reliability high;
When electric current flows to drain D from the source S of driven metal-oxide-semiconductor, the current potential of the source S of driven metal-oxide-semiconductor is higher than the current potential of drain D, therefore the anode potential of diode D11 is higher than the anode potential of diode D12, because the electrical characteristic of triode Q21 with Q22 is identical, therefore when this PN junction forward conduction of base stage B2-emitter E 2, this PN junction of base stage B1-emitter E 1 oppositely ends, also end between collector electrode C1 and emitter E 1, now collector electrode C1 is high level, diode Q4 saturation conduction, there is provided the drive singal of a high level to driven metal-oxide-semiconductor by resistance R1,
When electric current flows to source S from the drain D of driven metal-oxide-semiconductor, the current potential of the drain D of the metal-oxide-semiconductor be opened is higher than the current potential of source S, therefore the anode potential of diode D12 is higher than the anode potential of diode D11, now this PN junction forward conduction of base stage B1-emitter E 1, this PN junction of base stage B2-emitter E 2 oppositely ends, and the current potential of collector electrode C1 is clamped at V
b1E1+ V
falthough now Q3 meeting saturation conduction, open threshold voltage because its emitter current potential Vces value is less than the minimum of driven metal-oxide-semiconductor, therefore driven metal-oxide-semiconductor will be closed.
3, triode Q21 and Q22, diode D11 and D12 be have employed respectively be integrated on same chip, at identical working condition and when ensureing identical performance parameter, conveniently manufacture use in enormous quantities; While meeting circuit requirement, save cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, obviously, the accompanying drawing that the following describes is only some embodiments recorded in the utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the synchronous driving circuit of metal-oxide-semiconductor of the present utility model;
Fig. 2 is the partial enlarged drawing of triode Q2 in Fig. 1;
Fig. 3 is the application schematic diagram of buck circuit of synchronous rectification;
Fig. 4 is inverse-excitation type synchronous rectifying circuit;
Fig. 5 is positive activation type circuit of synchronous rectification;
Fig. 6 is semibridge system circuit of synchronous rectification;
Fig. 7 is LLC circuit of synchronous rectification.
Embodiment
Technical scheme in the utility model is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the utility model embodiment, technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all should belong to the scope of the utility model protection.
The utility model embodiment adopts the mode of going forward one by one to write.
A synchronous driving circuit for metal-oxide-semiconductor, comprises triode Q2, PNP triode Q3, NPN triode Q4, diode D1, resistance R3, resistance R4, accessory power supply Vcc; Wherein there are two symmetrical NPN triode Q21 and Q22 the inside of triode Q2, and the electrical characteristic of triode Q21 with Q22 is identical; There are two symmetrical diode D11 and D12 the inside of diode D1, and the electrical characteristic of diode D11 with D12 is identical; The base stage B1 of triode Q21, the base stage B2 of triode Q22 form connected node after being connected with collector electrode C2, and connected node is connected with accessory power supply Vcc positive pole by resistance R3; The emitter E 1 of triode Q21 is connected with the anode of diode D11; The emitter E 2 that Q22 stated by institute's triode is connected with the anode of diode D12; The collector electrode C1 of triode Q21 is connected with accessory power supply Vcc positive pole by resistance R4; The base stage B3 of triode Q3 is connected with collector electrode C1 with the connected node of the base stage B4 of triode Q4; The emitter E 3 of triode Q3 is connected with the grid G of driven metal-oxide-semiconductor with the connected node of the emitter E 4 of triode Q4; The collector electrode C4 of triode Q4 is connected with accessory power supply Vcc positive pole; The collector electrode C3 of triode Q3, the negative electrode of diode D11 are connected by same node with the source S of driven metal-oxide-semiconductor; The negative electrode of diode D12 is connected with the drain D of driven metal-oxide-semiconductor; Accessory power supply Vcc negative pole is connected with the source S of driven metal-oxide-semiconductor.
The synchronous driving circuit of metal-oxide-semiconductor also comprises diode D2, and the anode of diode D2 is connected with the base stage B2 of the base stage B1 of triode Q21, triode Q22 and the connected node of collector electrode C2 three, and the negative electrode of diode D2 is connected with collector electrode C1; The base stage B3 of triode Q3 is connected with the source S of driven metal-oxide-semiconductor by resistance R2 with the connected node of the base stage B4 of triode Q4; Resistance R1 is also provided with between the connected node of the emitter E 3 of triode Q3 and the emitter E 4 of triode Q4 and the grid G of driven metal-oxide-semiconductor; Accessory power supply Vcc is provided with decoupling capacitor C, and decoupling capacitor C one end is connected with accessory power supply Vcc positive pole, and the other end is connected with the source S of driven metal-oxide-semiconductor; Magnitude of voltage between the source S of accessory power supply Vcc negative pole and driven metal-oxide-semiconductor is between+3.3V ~+20V.
When electric current flows to drain D from the source S of driven metal-oxide-semiconductor, the current potential of the source S of driven metal-oxide-semiconductor is higher than the current potential of drain D, therefore the anode potential of diode D11 is higher than the anode potential of diode D12, because the electrical characteristic of triode Q21 with Q22 is identical, therefore when this PN junction forward conduction of base stage B2-emitter E 2, this PN junction of base stage B1-emitter E 1 oppositely ends, also end between collector electrode C1 and emitter E 1, now collector electrode C1 is high level, triode Q4 saturation conduction, there is provided the drive singal of a high level to driven metal-oxide-semiconductor by resistance R1, drive level is approximately: VCC-Vces,
When electric current flows to source S from the drain D of driven metal-oxide-semiconductor, the current potential of the drain D of the driven metal-oxide-semiconductor opened is higher than the current potential of source S, therefore the anode potential of diode D12 is higher than the anode potential of diode D11, now this PN junction forward conduction of base stage B1-emitter E 1, this PN junction of base stage B2-emitter E 2 oppositely ends, and the current potential of collector electrode C1 is clamped at V
b1E1+ V
f, now Q3 meeting saturation conduction, the grid potential of Q3 emitter and driven metal-oxide-semiconductor can be discharged to Vces, and this value is less than the minimum of driven metal-oxide-semiconductor and opens threshold voltage, and therefore driven metal-oxide-semiconductor will be closed.
The synchronous driving circuit of above-mentioned driven metal-oxide-semiconductor can be applicable to buck circuit of synchronous rectification, inverse-excitation type synchronous rectifying circuit, positive activation type circuit of synchronous rectification, semibridge system circuit of synchronous rectification and LLC circuit of synchronous rectification etc.:
1, as described in Figure 3, the application of synchronous driving circuit in buck circuit of synchronous rectification of the metal-oxide-semiconductor in the utility model;
During use, the node grid G in circuit diagram 1, drain D and source S are connected with ground with the first grid G1 of metal-oxide-semiconductor Q1 driven in buck circuit of synchronous rectification, the first drain D 1 respectively;
K switch 1, inductance L 1 is provided with, driven metal-oxide-semiconductor Q1, resistance R5 and electric capacity C5 in buck circuit of synchronous rectification; Wherein K switch 1, inductance L 1, one end of driven metal-oxide-semiconductor Q1 first drain D 1 is connected by same node, the other end of K switch 1 is connected with the input I1 of circuit, and the other end of inductance L 1 is connected with the output O1 of circuit, and the output O1 of circuit is connected by electric capacity C5 with ground wire; This driven metal-oxide-semiconductor Q1 first source S 1 is connected with ground wire, and driven metal-oxide-semiconductor Q1 first grid G1 is connected with ground wire by resistance R5.
K switch 1 period of contact, electric current flows through K switch 1, inductance L 1 from input I1, after electric capacity C5 filtering, by output loading, turns back to the negative terminal of input I1 from ground wire.Now the current potential of driven metal-oxide-semiconductor Q1 first drain D 1 is higher than the current potential of the first source S 1, and the first grid G1 drive singal of driven metal-oxide-semiconductor Q1 is low level, namely closes.
K switch 1 disconnects moment, because inductance L 1 electric current can not suddenly change, flows through the electric current of inductance L 1, the first drain D 1 can be flowed into from first source S 1 of driven metal-oxide-semiconductor Q1, then after electric capacity C5 filtering, by output loading, first source S 1 of driven metal-oxide-semiconductor Q1 is turned back to from ground wire; Now first source S 1 current potential of driven metal-oxide-semiconductor Q1 is higher than the current potential of the first drain D 1, and the first grid G1 drive singal of driven metal-oxide-semiconductor Q1 transfers high level to, namely open-minded.
Switch is at K1 off period, the electric current of inductance L 1 drops to before zero, and first source S 1 current potential of driven metal-oxide-semiconductor Q1 can be always high than the first drain D 1 current potential, when the electric current of inductance L 1 is greater than zero, the first grid G1 drive level of driven metal-oxide-semiconductor Q1 is high level, i.e. conducting always always; When the electric current of inductance L 1 drops to zero, because the existence of electric capacity C5, first drain D 1 current potential of driven metal-oxide-semiconductor Q1 is higher than the first source S 1, and therefore driven metal-oxide-semiconductor Q1 drive level is low level, namely closes
Next switch periods, K switch 1 closes, and repeats the aforesaid course of work.
2, as described in Figure 4, the application of synchronous driving circuit in inverse-excitation type synchronous rectifying circuit of the metal-oxide-semiconductor in the utility model;
During use, the node grid G in circuit diagram 1, drain D and source S are connected with ground with the first grid G1 of metal-oxide-semiconductor Q1 driven in inverse-excitation type synchronous rectifying circuit, the first drain D 1 respectively.
Be provided with transformer T1, K switch 2, electric capacity C6 and resistance R6 in inverse-excitation type synchronous rectifying circuit, wherein the two ends of the former limit winding of transformer T1 respectively with the input anode I of circuit
1+with input ground end I
1 groundconnect, wherein K switch 2 is arranged on former limit winding and input ground end I
1 groundbetween, the two ends of vice-side winding respectively with the output plus terminal O of circuit
1+with output hold O
1 groundconnect, wherein driven metal-oxide-semiconductor Q1 is arranged on vice-side winding and holds O with exporting
1 groundbetween, first drain D 1 of driven metal-oxide-semiconductor Q1 is connected with vice-side winding, and the first source S 1 holds O with output ground
1 groundconnect, first grid G1 then holds O by resistance R6 and output ground
1 groundconnect.
K switch 2 period of contact, electric current is from input anode I
1+, flow through the former limit winding of transformer T1, through K switch 2 from input ground end I
1 groundreturn input negative terminal I
1-.Because the Same Name of Ends relation of transformer T1, first drain D 1 current potential of driven metal-oxide-semiconductor Q1 can be higher than the current potential of the first source S 1, and the first grid G1 drive singal of driven metal-oxide-semiconductor Q1 is low level, namely closes.
K switch 2 disconnects moment, because the Same Name of Ends relation of transformer T1, first drain D 1 current potential of driven metal-oxide-semiconductor Q1 can be lower than the current potential of the first source S 1, and the first grid G1 drive singal of driven metal-oxide-semiconductor Q1 transfers high level to, namely open-minded.
K switch 2 off period, as long as the electric current of transformer T1 vice-side winding does not drop to zero, the turn-on condition of driven metal-oxide-semiconductor Q1 does not just change, and namely keeps conducting state always.When the secondary winding current of transformer T1 drops to zero, because the existence of electric capacity C6, first drain D 1 current potential of driven metal-oxide-semiconductor Q1 can be higher than the first source S 1, and therefore, the drive singal of driven metal-oxide-semiconductor Q1 can transfer low level to, namely closes.
Next switch periods, K switch 2 closes, and repeats said process.
3, as described in Figure 5, the application of synchronous driving circuit in positive activation type circuit of synchronous rectification of the metal-oxide-semiconductor in the utility model:
During use, the node grid G in circuit diagram 1, drain D and source S are connected with ground with the first grid G1 of metal-oxide-semiconductor Q1 driven in positive activation type circuit of synchronous rectification, the first drain D 1 respectively.
Be provided with transformer T2, K switch 3, electric capacity C7, diode D2, inductance L 2, resistance R7 and electric capacity C8 in positive activation type circuit of synchronous rectification, wherein the former limit winding of transformer T2 respectively with input anode I
2+with input ground end I
2 groundconnect, wherein with input ground end I
2 groundcentre is provided with K switch 3, transformer T2 and K switch 3 and input anode I
2+with input ground end I
2 groundbetween be parallel with electric capacity C7, the two ends of the vice-side winding of transformer T2 respectively with output plus terminal O
2+with output hold O
2 groundconnect, wherein with output plus terminal O
2+between be provided with inductance L 2, with output hold O
2 groundbetween be provided with diode D2, wherein driven metal-oxide-semiconductor Q1 is connected in parallel on the two ends of transformer T2 and diode D2, the first drain D 1 and transformer secondary winding switching, and the first source S 1 is connected with diode D2, holds O to first grid G1 and output
2 groundconnected by resistance R7, electric capacity C8 is connected in parallel on output plus terminal O
2+with output hold O
2 groundtwo ends.
K switch 3 period of contact, input current is from input anode I
2+, flow through the former limit winding of transformer T2, through K switch 3 from input ground end I
2 groundturn back to input negative (ground wire); Because the Same Name of Ends relation of transformer T2, first drain D 1 current potential of driven metal-oxide-semiconductor Q1 can be higher than the current potential of the first source S 1, and the first grid G1 drive singal of driven metal-oxide-semiconductor Q1 is low level, namely closes.
K switch 3 disconnects moment, because the electric current of the Same Name of Ends relation of transformer T2 and inductance L 2 can not suddenly change, the electric current flowing through inductance L 2 can flow to the first drain D 1 from first source S 1 of driven metal-oxide-semiconductor Q1, first drain D 1 current potential of driven metal-oxide-semiconductor Q1 can be lower than the current potential of the first source S 1, the first grid G1 drive singal of driven metal-oxide-semiconductor Q1 can transfer high level to, namely open-minded.
K switch 3 off period, did not drop to before zero at the electric current of inductance L 2, and the turn-on condition of driven metal-oxide-semiconductor Q1 will exist always, i.e. conducting always; When the electric current of inductance L 2 drops to zero, because the existence of output capacitance C8, first drain D 1 current potential of driven metal-oxide-semiconductor Q1 can be higher than the first source S 1, and therefore, the drive singal of driven metal-oxide-semiconductor Q1 can transfer low level to, namely closes.
Next switch periods, K switch 3 closes, and repeats said process.
4, as described in Figure 6, the application of synchronous driving circuit in LLC resonance oscillation semi-bridge formula circuit of synchronous rectification of the metal-oxide-semiconductor in the utility model:
During use, adopt the synchronous driving circuit of the metal-oxide-semiconductor in two groups of the utility model Fig. 1, the node grid G in the synchronous driving circuit of two groups of metal-oxide-semiconductors, drain D and source S are connected with ground with the first grid G1 of two driven metal-oxide-semiconductor Q1 in LLC resonance oscillation semi-bridge formula circuit of synchronous rectification, the first drain D 1 respectively.
Wherein LLC resonance oscillation semi-bridge formula circuit of synchronous rectification comprises K switch 4 and K5, transformer T4, inductance L 3, electric capacity C9, electric capacity C10, resistance R8 and resistance R9, and wherein winding one end, former limit of transformer T4 is passed through inductance L 3 and K switch 5 and inputted anode I
3+connect, the other end of the former limit winding of transformer T4 is by electric capacity C9 and input ground end I
3 groundconnect, wherein the former limit winding of inductance L 3, transformer T4 be connected with electric capacity C9 after two ends in parallel with K switch 4; First driven metal-oxide-semiconductor Q1 is arranged on one end of the vice-side winding of transformer T4 and holds O with exporting
3 groundbefore, wherein the first drain D 1 is connected with one end of the vice-side winding of transformer T4, and the first source S 1 holds O with output ground
3 groundconnect, first grid G1 holds O by resistance R8 and output ground
3 groundconnect; The other end of the vice-side winding of transformer T4 holds O by second driven metal-oxide-semiconductor Q1 and output ground
3 groundconnect, wherein the first drain D 1 is connected with the other end of the vice-side winding of transformer T4, and the first source S 1 holds O with output ground
3 groundconnect, first grid G1 holds O by resistance R9 and output ground
3 groundconnect; The centre tap of transformer T4 vice-side winding and output plus terminal O
3+connect, wherein output plus terminal O
3+with output hold O
3 groundbetween be parallel with electric capacity C10.
LLC resonance oscillation semi-bridge formula main switching control K4 and K5 in the mode of pulse frequency modulated, can interlock and open and close.
Closed, the K4 off period of K switch 5: input current is from input anode I
3+flow through the former limit winding of transformer T4 through K5, resonant inductance L3, through electric capacity C9, turn back to input negative (ground wire) from input ground wire; Meanwhile, because the Same Name of Ends of transformer T4, first drain D 1 current potential of first driven metal-oxide-semiconductor Q1 can first drain D 1 current potential of second driven metal-oxide-semiconductor Q1 lower than the current potential of the first source S 1 can be higher than the current potential of the first source S 1; Now the grid G drive singal of first driven metal-oxide-semiconductor Q1 is high level, i.e. conducting; The first grid G1 drive singal of second driven metal-oxide-semiconductor Q1 is low level, namely closes.
K switch 4 is closed, K5 off period: input side electric current from the anode of C8, through the former limit winding of transformer T4, then through inductance L 3, K4 to inputting ground wire; Meanwhile, because the Same Name of Ends relation of transformer T5, first drain D 1 current potential of second driven metal-oxide-semiconductor Q1 can be lower than the current potential of the first source S 1, and first drain D 1 current potential of first driven metal-oxide-semiconductor Q1 can be higher than the current potential of the first source S 1; The first grid G1 drive singal of second driven metal-oxide-semiconductor Q1 is high level, i.e. conducting; The first grid G1 drive singal of first driven metal-oxide-semiconductor Q1 is low level, namely closes.
K switch 4, K5 all off periods: because the existence of electric capacity C10, first drain D 1 current potential of first driven metal-oxide-semiconductor Q1 and second driven metal-oxide-semiconductor Q1 all can be higher than the first source S 1 current potential, the drive singal of the first grid G1 of two driven metal-oxide-semiconductor Q1 transfers low level to, namely closes.
Next switch periods, repeats said process.
5, as described in Figure 7, the application of synchronous driving circuit in semibridge system circuit of synchronous rectification of the metal-oxide-semiconductor in the utility model:
During use, adopt the synchronous driving circuit of the metal-oxide-semiconductor in two groups of the utility model Fig. 1, the node grid G in the synchronous driving circuit of two groups of metal-oxide-semiconductors, drain D and source S are connected with ground with the first grid G1 of the driven metal-oxide-semiconductor Q1 of two in semibridge system circuit of synchronous rectification, the first drain D 1 respectively.
Wherein, in semibridge system circuit of synchronous rectification, be provided with K switch 6 and K7, transformer T5, inductance L 4, electric capacity C11, electric capacity C12, resistance R10, resistance R11.
Semibridge system main switching control K6 and K7 can not be simultaneously open-minded, and they in the mode of pulse width modulation, can interlock and open and close.
Wherein winding one end, former limit of transformer T5 is by K switch 7 and input anode I
4+connect, the other end of the former limit winding of transformer T4 is by electric capacity C11 and input ground end I
4 groundconnect, wherein the former limit winding of transformer T4 be connected with electric capacity C11 after two ends in parallel with K switch 6; First driven metal-oxide-semiconductor Q1 is arranged on one end of the vice-side winding of transformer T5 and holds O with exporting
4 groundbefore, wherein the first drain D 1 is connected with one end of the vice-side winding of transformer T5, and the first source S 1 holds O with output ground
4 groundconnect, first grid G1 holds O by resistance R10 and output ground
4 groundconnect; The other end of the vice-side winding of transformer T5 holds O by second driven metal-oxide-semiconductor Q1 and output ground
4 groundconnect, wherein the first drain D 1 is connected with the other end of the vice-side winding of transformer T5, and the first source S 1 holds O with output ground
4 groundconnect, first grid G1 holds O by resistance R11 and output ground
4 groundconnect; The centre tap of transformer T5 vice-side winding and output plus terminal O
4+connected by inductance L 4, wherein output plus terminal O
4+with output hold O
4 groundbetween be parallel with electric capacity C12.
When K switch 7 is closed, K switch 6 disconnects: input current is from input anode I
4+the former limit winding of transformer T5 is flow through, through electric capacity C11, from input ground end I through K7
4 groundturn back to input negative (ground wire); Meanwhile, because the Same Name of Ends relation of transformer T5, first drain D 1 current potential of first driven metal-oxide-semiconductor Q1 can be lower than the current potential of the first source S 1, and first drain D 1 current potential of second driven metal-oxide-semiconductor Q1 can be higher than the current potential of the first source S 1.The first grid G1 drive singal of first driven metal-oxide-semiconductor Q1 is high level, i.e. conducting; The first grid G1 drive singal of second driven metal-oxide-semiconductor Q1 is low level, namely closes.
Closed, K switch 7 off period of K switch 6: input side electric current, from the anode of electric capacity C11, through the former limit winding of transformer T5, then through K switch 4 to ground wire, flows back to input and bears; Meanwhile, because the Same Name of Ends relation of transformer T5, first drain D 1 current potential of second driven metal-oxide-semiconductor Q1 can be lower than the current potential of the first source S 1, and first drain D 1 current potential of first driven metal-oxide-semiconductor Q1 can be higher than the current potential of the first source S 1; The first grid G1 drive singal of second driven metal-oxide-semiconductor Q1 is high level, i.e. conducting; The first grid G1 drive singal of first driven metal-oxide-semiconductor Q1 is low level, namely closes.
K switch 6, K7 all off periods: input side electric current is zero; Because inductance L 4 electric current can not suddenly change, when inductance L 4 electric current is greater than zero, the electric current flowing through inductance L 4 can flow to the first drain D 1 from first source S 1 of two driven metal-oxide-semiconductor Q1 respectively, and therefore the first drain D 1 current potential can be lower than the current potential of the first source S 1; The first grid G1 drive singal of two driven metal-oxide-semiconductor Q1 is high level, i.e. conducting; Once the electric current of inductance L 4 drops to zero, because of the existence of electric capacity C12, first drain D 1 current potential of two driven metal-oxide-semiconductor Q1 all can be higher than the first source S 1 current potential, and then the drive singal of the first grid G1 of two driven metal-oxide-semiconductor Q1 transfers low level to, namely closes.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein when not departing from spirit or scope of the present utility model, can realize in other embodiments.Therefore, the utility model can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a synchronous driving circuit for metal-oxide-semiconductor, is characterized in that, comprises triode Q2, triode Q3, triode Q4, diode D1, resistance R3, resistance R4, accessory power supply Vcc;
Wherein there are two symmetrical NPN triode Q21 and Q22 the inside of triode Q2, and there are two symmetrical diode D11 and D12 the inside of diode D1;
The base stage B1 of described triode Q21, the base stage B2 of triode Q22 form connected node after being connected with collector electrode C2, and described connected node is connected with accessory power supply Vcc positive pole by resistance R3; The emitter E 1 of described triode Q21 is connected with the anode of described diode D11; The emitter E 2 of described triode Q22 is connected with the anode of described diode D12; The collector electrode C1 of described triode Q21 is connected with described accessory power supply Vcc positive pole by resistance R4;
The base stage B3 of described triode Q3 is connected with described collector electrode C1 with the connected node of the base stage B4 of triode Q4; The emitter E 3 of described triode Q3 is connected with the grid G of driven metal-oxide-semiconductor with the connected node of the emitter E 4 of triode Q4; The collector electrode C4 of described triode Q4 is connected with described accessory power supply Vcc positive pole; The collector electrode C3 of described triode Q3, the negative electrode of diode D11 are connected by same node with driven metal-oxide-semiconductor source S; The negative electrode of described diode D12 is connected with driven metal-oxide-semiconductor drain D;
Described accessory power supply Vcc negative pole is connected with driven metal-oxide-semiconductor source S.
2. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, is characterized in that, the electrical characteristic of described triode Q21 with Q22 is identical.
3. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, is characterized in that, the electrical characteristic of described diode D11 with D12 is identical.
4. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, is characterized in that, described triode Q3 is PNP triode, and described triode Q4 is NPN triode.
5. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, it is characterized in that, the synchronous driving circuit of described driven metal-oxide-semiconductor also comprises diode D2, the anode of described diode D2 is connected with the connected node of the base stage B1 of described triode Q21, the base stage B2 of triode Q22 and collector electrode C2 three, and the negative electrode of described diode D2 is connected with described collector electrode C1.
6. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, is characterized in that, the base stage B3 of described triode Q3 is connected with the source S of described driven metal-oxide-semiconductor by resistance R2 with the connected node of the base stage B4 of triode Q4.
7. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, is characterized in that, is also provided with resistance R1 between the connected node of the emitter E 3 of described triode Q3 and the emitter E 4 of triode Q4 and the grid G of driven metal-oxide-semiconductor.
8. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, it is characterized in that, described accessory power supply Vcc is provided with decoupling capacitor C, and described decoupling capacitor C one end is connected with accessory power supply Vcc positive pole, and the other end is connected with the source S of described driven metal-oxide-semiconductor.
9. the synchronous driving circuit of metal-oxide-semiconductor according to claim 1, is characterized in that, the magnitude of voltage between the source S of described accessory power supply Vcc negative pole and described driven metal-oxide-semiconductor is between+3.3V ~+20V.
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| CN201521018806.XU CN205232015U (en) | 2015-12-10 | 2015-12-10 | Synchronization of MOS pipe is from drive circuit |
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| CN201521018806.XU CN205232015U (en) | 2015-12-10 | 2015-12-10 | Synchronization of MOS pipe is from drive circuit |
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| CN205232015U true CN205232015U (en) | 2016-05-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322767A (en) * | 2015-12-10 | 2016-02-10 | 常州诚联电源制造有限公司 | Synchronous self-driving circuit of MOS tube |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322767A (en) * | 2015-12-10 | 2016-02-10 | 常州诚联电源制造有限公司 | Synchronous self-driving circuit of MOS tube |
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