CN206211866U - A kind of novel synchronous rectified circuit - Google Patents
A kind of novel synchronous rectified circuit Download PDFInfo
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- CN206211866U CN206211866U CN201621300848.7U CN201621300848U CN206211866U CN 206211866 U CN206211866 U CN 206211866U CN 201621300848 U CN201621300848 U CN 201621300848U CN 206211866 U CN206211866 U CN 206211866U
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Abstract
The utility model discloses a kind of novel synchronous rectified circuit, including rectification metal-oxide-semiconductor and afterflow metal-oxide-semiconductor；Described rectification metal-oxide-semiconductor is serially connected in transformer secondary output lower end, and grid connects transformer secondary output upper end by a RC modules；The reverse series transformer secondary upper end of described afterflow metal-oxide-semiconductor, grid connects transformer secondary output lower end by the 2nd RC modules.Advantage is that all metal-oxide-semiconductors of synchronous rectification are a new technologies for replacing commutation diode to reduce rectifier loss using the extremely low special power MOSFET of on state resistance.It can greatly improve the efficiency of DC/DC converters and in the absence of the dead zone voltage caused by Schottky barrier voltage.
Description
Technical field
The utility model is related to a kind of electronic circuit, more particularly to a kind of novel synchronous rectified circuit.
Background technology
With the development and technological progress of society, various electronic products and various consumer electronicses largely occur, enter into
In people's daily life and production work.The development of electronic technology so that the operating voltage of circuit is more and more lower, electric current increasingly
Greatly.Low voltage operating advantageously reduces the overall power consumption of circuit, but also to Power Management Design proposes new problem.Switch electricity
The loss in source is mainly made up of 3 parts:The loss of power switch pipe, the loss of high frequency transformer, the loss of output end rectifying tube.
In the case of low-voltage, High-current output, the conduction voltage drop of commutation diode is higher, and the loss of output end rectifying tube is particularly dashed forward
Go out, this results in rectifier loss increase, power-efficient reduction.Therefore, traditional diode rectifier circuit cannot meet realization
The need for low-voltage, high-current switch high efficiency of power supply and small size, efficient bottleneck is carried as restriction DC/DC converters.
Utility model content
In order to solve the above-mentioned technical problem, the utility model purpose is to provide a kind of novel synchronous rectified circuit.
A kind of novel synchronous rectified circuit described in the utility model, it is characterised in that including rectification metal-oxide-semiconductor and afterflow
Metal-oxide-semiconductor；Described rectification metal-oxide-semiconductor is serially connected in transformer secondary output lower end, and grid is connected on transformer secondary output by a RC modules
End；The reverse series transformer secondary upper end of described afterflow metal-oxide-semiconductor, grid is connected under transformer secondary output by the 2nd RC modules
End.
Preferably, the first load resistance, first load resistance are concatenated between described rectification metal-oxide-semiconductor grid and drain electrode
The energy of inside junction capacity storage when ending for rectification metal-oxide-semiconductor of releasing.
Preferably, the second load resistance, second load resistance are concatenated between described afterflow metal-oxide-semiconductor grid and source electrode
The energy of inside junction capacity storage when ending for afterflow metal-oxide-semiconductor of releasing.
Preferably, the first voltage-stabiliser tube is concatenated between a described RC modules and ground, first voltage-stabiliser tube is used to prevent
Rectification metal-oxide-semiconductor grid voltage is too high.
Preferably, the second voltage-stabiliser tube is concatenated between the 2nd described RC modules and ground, second voltage-stabiliser tube is used to prevent
Afterflow metal-oxide-semiconductor grid voltage is too high.
Preferably, described described rectification metal-oxide-semiconductor source electrode first Despiking circuit in parallel with drain electrode two ends.
Preferably, described described afterflow metal-oxide-semiconductor source electrode second Despiking circuit in parallel with drain electrode two ends.
The utility model advantage is that all metal-oxide-semiconductors of synchronous rectification are using the extremely low special power of on state resistance
MOSFET is come a new technology replacing commutation diode to reduce rectifier loss.It can greatly improve the effect of DC/DC converters
Rate and in the absence of the dead zone voltage caused by Schottky barrier voltage.
Brief description of the drawings
Fig. 1 is the structural representation of circuit described in the utility model.
Specific embodiment
Novel synchronous rectified circuit described in the utility model, includes transformer T1, resistance R1~R9, electricity as shown in Figure 1
Hold C1~C4, metal-oxide-semiconductor Q1, Q2, voltage-regulator diode Z1, Z2.The described T1 connection metal-oxide-semiconductor Q1 drain electrode of level upper end 4 of transformer,
Metal-oxide-semiconductor Q1 source grounds；Upper end 4 also passes sequentially through electric capacity C2, resistance R5, R7 connection metal-oxide-semiconductor Q2 grids, and electric R6 is connected in parallel on electric capacity
C2 and resistance R5 two ends.The T1 connection of level lower end 3 metal-oxide-semiconductor Q2 source electrode of transformer, metal-oxide-semiconductor Q2 grounded drains；Lower end 3 also leads to successively
Resistance R4, R2 connection metal-oxide-semiconductor Q1 grids are crossed, electric capacity C3 is in parallel with resistance R4.
Its operation principle is：When T1 level upper end 4 of transformer is timing, electric current makes MOS through electric capacity C2, resistance R5, R6, R7
Pipe Q2 is turned on, and circuit constitutes loop, and wherein metal-oxide-semiconductor Q2 is rectification metal-oxide-semiconductor；Metal-oxide-semiconductor Q1 grids are due in reverse-biased and end.When
T1 level lower end 3 of transformer is timing, and electric current turns on metal-oxide-semiconductor Q1 through C3, resistance R4, R2, and circuit constitutes loop, wherein MOS
Pipe Q1 is afterflow metal-oxide-semiconductor；Q2 grids are due in reverse-biased and end.
In order to release metal-oxide-semiconductor Q1, Q2 end when inside junction capacity storage energy, be respectively provided with two load resistance R3 and
R8.Described load resistance R3 one end connection metal-oxide-semiconductor Q1 source electrodes, the tie point of other end connection resistance R2 and R4.Described
The connection metal-oxide-semiconductor Q2 drain electrodes of load resistance R8 one end, the tie point of other end connection resistance R5 and R7.
Burnt out to prevent the grid voltage of metal-oxide-semiconductor Q1, Q2 too high, be respectively provided with two voltage-regulator diodes Z1 and Z2.
Described voltage-regulator diode Z1 positive poles connection metal-oxide-semiconductor Q1 source electrodes, the tie point of negative pole connection resistance R2 and R4.Described voltage stabilizing two
The connection metal-oxide-semiconductor Q2 drain electrodes of pole pipe Z2 positive poles, the tie point of negative pole connection resistance R5 and R7.
In order to preferably obtain rectification effect, respectively in two metal-oxide-semiconductor Q1, Q2 two ends parallel connections one by resistance and electric capacity string
The Despiking circuit for connecing.Described metal-oxide-semiconductor Q1 drain electrodes connect metal-oxide-semiconductor Q1 source electrodes by resistance R1, electric capacity C1；Described
Metal-oxide-semiconductor Q2 source electrodes connect metal-oxide-semiconductor Q2 and drain by resistance R9, electric capacity C4.
For a person skilled in the art, technical scheme that can be as described above and design, make other each
Plant corresponding change and deform, and all these changes and deforms the guarantor that should all belong to the utility model claim
Within the scope of shield.
Claims (7)
1. a kind of novel synchronous rectified circuit, it is characterised in that including rectification metal-oxide-semiconductor and afterflow metal-oxide-semiconductor；Described rectification MOS
Pipe is serially connected in transformer secondary output lower end, and grid connects transformer secondary output upper end by a RC modules；Described afterflow metal-oxide-semiconductor is anti-
To series transformer secondary upper end, grid connects transformer secondary output lower end by the 2nd RC modules.
2. circuit according to claim 1, it is characterised in that the is concatenated between described rectification metal-oxide-semiconductor grid and drain electrode
One load resistance, the energy of inside junction capacity storage when first load resistance ends for rectification metal-oxide-semiconductor of releasing.
3. circuit according to claim 1, it is characterised in that is concatenated between described afterflow metal-oxide-semiconductor grid and source electrode
Two load resistances, the energy of inside junction capacity storage when second load resistance ends for afterflow metal-oxide-semiconductor of releasing.
4. circuit according to claim 1, it is characterised in that concatenate the first voltage stabilizing between a described RC modules and ground
Pipe, first voltage-stabiliser tube is used to prevent rectification metal-oxide-semiconductor grid voltage too high.
5. circuit according to claim 1, it is characterised in that concatenate the second voltage stabilizing between the 2nd described RC modules and ground
Pipe, second voltage-stabiliser tube is used to prevent afterflow metal-oxide-semiconductor grid voltage too high.
6. circuit according to claim 1, it is characterised in that described described rectification metal-oxide-semiconductor source electrode and drain electrode two ends
First Despiking circuit in parallel.
7. circuit according to claim 1, it is characterised in that described described afterflow metal-oxide-semiconductor source electrode and drain electrode two ends
Second Despiking circuit in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621300848.7U CN206211866U (en) | 2016-11-30 | 2016-11-30 | A kind of novel synchronous rectified circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621300848.7U CN206211866U (en) | 2016-11-30 | 2016-11-30 | A kind of novel synchronous rectified circuit |
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| Publication Number | Publication Date |
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| CN206211866U true CN206211866U (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621300848.7U Active CN206211866U (en) | 2016-11-30 | 2016-11-30 | A kind of novel synchronous rectified circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107070226A (en) * | 2017-06-06 | 2017-08-18 | 成都奔月电子技术有限公司 | A kind of DC DC Switching Power Supplies |
-
2016
- 2016-11-30 CN CN201621300848.7U patent/CN206211866U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107070226A (en) * | 2017-06-06 | 2017-08-18 | 成都奔月电子技术有限公司 | A kind of DC DC Switching Power Supplies |
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| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Qiu Zijian Inventor before: Qiu Zijian |
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| CB03 | Change of inventor or designer information |