CN204216868U - IGBT parallel drive in high-power frequency conversion speed regulating device and detection protective circuit - Google Patents
IGBT parallel drive in high-power frequency conversion speed regulating device and detection protective circuit Download PDFInfo
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- CN204216868U CN204216868U CN201420674182.6U CN201420674182U CN204216868U CN 204216868 U CN204216868 U CN 204216868U CN 201420674182 U CN201420674182 U CN 201420674182U CN 204216868 U CN204216868 U CN 204216868U
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Abstract
The utility model relates to the IGBT parallel drive in a kind of high-power frequency conversion speed regulating device and detects protective circuit, its technical characterstic comprises the following steps: comprise IGBT synchronous driving in parallel and dynamic current equalizing circuit, short-circuit detection protection circuit and surge voltage-suppressing circuit, described short-circuit detection protection circuit on one side is connected with master controller by photoelectric isolating circuit, this short-circuit detection protection circuit other end to drive and dynamic current equalizing circuit is connected by surge voltage-suppressing circuit and IGBT are in parallel synchronous, this IGBT synchronous driving in parallel and dynamic current equalizing circuit are connected with two IGBT in parallel.The drive singal that the utility model is sent by photoelectric isolating circuit reception main controller; there is provided momentary high power drive singal through power amplification circuit and drive parallel IGBT; gate voltage is made synchronously to realize optimal dynamic current-sharing; detection protection is carried out to Uce overvoltage and IGBT short circuit simultaneously, improve the reliability and stability of IGBT parallel operation.
Description
Technical field
The utility model belongs to high-power frequency conversion speed regulating device technical field, the IGBT parallel drive in especially a kind of high-power frequency conversion speed regulating device and detection protective circuit.
Background technology
Along with high-power frequency conversion speed regulating device are widely used in industry spot, single IGBT module can not meet high power AC equipment requirement, and the major loop solution of branched IGBT parallel connection is because its cost performance is high, heat distribution is even, current density is large, flexible layout has become a kind of designer trends.Because between parallel IGBT, the difference of static and dynamic Status performance can affect switching characteristic and current-sharing effect, therefore, be easy to cause IGBT to damage.Ensure that except taking same batch of IGBT its parameter is tried one's best unanimously; gate drive circuit design realizes dynamic current equalizing for parallel connection application and plays vital effect; needing more to optimize and drive reliably and protective circuit, all there is certain problem in the reliability of existing driving and protective circuit and stability.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, provide a kind of reasonable in design, reliability is high and IGBT parallel drive in the high-power frequency conversion speed regulating device that stability is strong and detect protective circuit.
The utility model solves existing technical problem and takes following technical scheme to realize:
IGBT parallel drive in a kind of high-power frequency conversion speed regulating device and detection protective circuit; comprise IGBT synchronous driving in parallel and dynamic current equalizing circuit, short-circuit detection protection circuit and surge voltage-suppressing circuit; described short-circuit detection protection circuit on one side is connected with master controller by photoelectric isolating circuit; this short-circuit detection protection circuit other end to drive and dynamic current equalizing circuit is connected by surge voltage-suppressing circuit and IGBT are in parallel synchronous, and this IGBT synchronous driving in parallel and dynamic current equalizing circuit are connected with two IGBT of parallel connection.
And described IGBT is in parallel synchronously to be driven and dynamic current equalizing circuit comprises power amplifier V1, power amplifier V2, opens and drive resistance Ron101, open and drive resistance Ron102, open and drive resistance Ron201, open and drive resistance Ron202, turn off and drive diode Doff101, turn off and drive diode Doff102, turn off and drive diode Doff201, turn off and drive diode Doff202, open and drive diode Don, turn off and drive resistance Roff and four IGBT gate pole limiter diode; Opening one end after driving resistance Ron101 to drive diode Doff101 in parallel with shutoff is connected on the common emitter of two power amplifiers, the other end is connected on the gate pole of an IGBT, open drive resistance Ron102 with turn off drives diode Doff102 in parallel after one end be connected on the emitter of an IGBT, the other end drives diode Don by parallel opening, shutoff driving resistance Roff is connected to the ground and connects; Opening one end after driving resistance Ron201 to drive diode Doff201 in parallel with shutoff is connected on the common emitter of two power amplifiers, the other end is connected on the gate pole of the 2nd IGBT, open drive resistance Ron202 with turn off drives diode Doff202 in parallel after one end be connected on the emitter of the 2nd IGBT, the other end drives diode Don by parallel opening, shutoff driving resistance Roff is connected to the ground and connects; Four IGBT gate pole limiter diodes are connected respectively on the gate pole of two IGBT.
And, described short-circuit detection protection circuit comprises the high pressure recovery diode D1 that negative electrode is connected to parallel IGBT collector electrode, the current-limiting resistance R1 be connected with high pressure recovery diode D1 anode, current-limiting resistance R1 left end meets filter capacitor C1, again by resistance R2, Opposite direction connection diode D2 is connected to drive singal; Filter capacitor C1 two ends parallel diode D3 and resistance R3 is as discharge loop, filter capacitor C1 upper end arranges voltage stabilizing didoe ZD1 by diode D4 and threshold voltage and controls triode V3, the indirect resistance R4 of the be of triode V3, triode V3 collector electrode passes through pull-up resistor R5 on the one hand to positive supply, is connected to drive singal on the other hand by resistance R6 and reversal connection diode D5; Resistance R7, resistance R8 and triode V4 form fault return circuit, and resistance R7 is the resistance of triode V4 base radio, and R8 is triode V4 collector electrode pull-up resistor, and fault-signal is drawn from triode V4 collector electrode.
And, described surge voltage-suppressing circuit comprises five surge suppression devices of series connection reversal connection to IGBT collector electrode, surge suppression device TVS5 anode links the gate pole of two parallel IGBTs respectively by diode D11 and diode D12, another branch road of surge suppression device TVS5 anode is by resistance R12 and just connecing before diode D13 links Driver amplifier, and the anode of surge suppression device TVS3 is connected with diode D13 anode by electric capacity C2, resistance R13.
Advantage of the present utility model and good effect are:
1, the utility model receives the drive singal that sends of main controller by photoelectric isolating circuit; there is provided momentary high power drive singal through power amplification circuit and drive parallel IGBT; gate voltage is made synchronously to realize optimal dynamic current-sharing; detection protection is carried out to Uce overvoltage and IGBT short circuit simultaneously, improve the reliability and stability of IGBT parallel operation.
2, the large single channel of driving power of the present utility model drives and can reach 2W; two in parallel, three high-power IGBTs in parallel can be driven; the good phase difference of synchronous consistency is less than 5ns; equal properties of flow good homophase IGBT heating temp difference is less than 3 DEG C; circuit performance is reliable; be active in one's movements owing to have employed the element protections such as fast diode, can protect high-power parallel IGBT reliability service, protection IGBT does not damage because of short circuit or overvoltage.
Accompanying drawing explanation
Fig. 1 is circuit diagram of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model embodiment is further described.
IGBT parallel drive in a kind of high-power frequency conversion speed regulating device and detection protective circuit; as shown in Figure 1; comprise IGBT synchronous driving in parallel and dynamic current equalizing circuit 1, short-circuit detection protection circuit 2 and surge voltage-suppressing circuit 3; this short-circuit detection protection circuit on one side is connected with master controller by photoelectric isolating circuit; this short-circuit detection protection circuit other end to drive and dynamic current equalizing circuit is connected by surge voltage-suppressing circuit and IGBT are in parallel synchronous, and this IGBT synchronous driving in parallel and dynamic current equalizing circuit are connected with two IGBT of parallel connection.Below each circuit is described respectively:
IGBT parallel connection synchronously drives and dynamic current equalizing circuit comprises drive singal push-pull power amplifier V1 and V2, an IGBT opens driving resistance Ron101 and Ron102, the 2nd IGBT opens driving resistance Ron201 and Ron202, IGBT shutoff driving diode Doff101 and Doff102, the 2nd IGBT turn off driving diode Doff201 and Doff202, open driving diode Don, shutoff driving resistance Roff and IGBT gate pole limiter diode D101, D102, D201 and D202.When parallel IGBT is opened, drive singal is high through V1 power amplification, driving resistance Ron101, IGBT1 gate pole, IGBT1 emitter through opening, opening driving resistance Ron102 and opening diode Don control IGBT1 conducting, driving resistance Ron201, IGBT2 gate pole, IGBT2 emitter through opening, opening driving resistance Ron202 and opening diode Don control IGBT2 conducting.When parallel IGBT turns off, the low V2 conducting of drive singal, power supply ground drives resistance Roff through shutoff, shutoff drives diode Doff102, IGBT1 emitter, IGBT1 gate pole, turn off driving diode Doff101, power tube V2 to negative supply, turn off IGBT1, power supply ground drives resistance Roff through shutoff, shutoff drives diode Doff202, IGBT2 emitter, IGBT2 gate pole, turn off driving diode Doff201, power tube V2 to negative supply, turns off IGBT2.
In this parallel connection synchronously driving and dynamic current equalizing circuit, opening to drive resistance and drive to turn off drives resistance independent, each IGBT has and oneself drives resistance separately, the driving resistance of IGBT1 drives resistance Ron101 for opening, Ron102 and shutoff drive resistance Roff, open and drive resistance Ron101, Ron102 goes here and there gate pole and emitter respectively, open and drive diode Don to make IGBT1 drive high level conducting, open and drive resistance Ron101 series connection Ron102, Doff101, Doff102 conducting when driving low level, IGBT1 gate pole turns off and drives resistance Roff, when IGBT1 is turned on and off, impedance is different, adjustable IGBT1 turns on and off edge.IGBT1 gate pole limiter diode D101, D102 amplitude limit gate pole drive level, protection IGBT1 gate pole.The driving resistance of IGBT2 drives resistance Ron201, Ron202 and shutoff to drive resistance Roff for opening, open and drive resistance Ron201, Ron202 to go here and there gate pole and emitter respectively, open and drive diode Don to make IGBT2 drive high level conducting, open and drive resistance Ron201 series connection Ron202, Doff201, Doff202 conducting when driving low level, IGBT2 gate pole turns off and drives resistance Roff, and when IGBT2 is turned on and off, impedance is different, and adjustable IGBT2 turns on and off edge.IGBT2 gate pole limiter diode D201, D202 amplitude limit gate pole drive level, protection IGBT2 gate pole.In the circuit of this part, diode adopts high current density Schottky diode, and conduction voltage drop is low, and electric current is large.Parallel IGBT driving resistance separately can reduce the dynamic unbalance because IGBT static characteristics derivation causes, open and drive resistance Ron102, Ron202 to go here and there two emitters, it is inconsistent in the stray inductance pressure drop of two emitters that IGBT opens inconsistent uneven dynamic current, be reflected to Ron102, Ron202 pressure drop different, make to open fast IGBT gate voltage to decline, open slow IGBT gate voltage to rise, dynamic current convergence balances.
Short-circuit detection protection circuit is protected by Uce tube voltage drop when detecting parallel IGBT conducting, exceedes protection threshold value and blocks drive singal and return alarm signal.This circuit comprises the high pressure recovery diode D1 that negative electrode is connected to parallel IGBT collector electrode, in the present embodiment, the reverse voltage 1000V of diode D1, recovery time 120ns, the current-limiting resistance R1 be connected with D1 anode, R1 left end meets filter capacitor C1, then by resistance R2, Opposite direction connection diode D2 is connected to drive singal; Filter capacitor C1 two ends parallel diode D3 and resistance R3 is as discharge loop, the capacitance of this filter capacitor C1 can arrange the short-circuit reaction blind area time, filter capacitor C1 upper end arranges voltage stabilizing didoe ZD1 by diode D4 and threshold voltage and controls triode V3, the indirect resistance R4 of the be of V3, V3 collector electrode is connected to drive singal by resistance R6 and reversal connection diode D5 by pull-up resistor R5 to positive supply on the one hand on the other hand; Resistance R7, R8 and triode V4 form fault return circuit, and R7 is the resistance of V4 base radio, and R8 is V4 collector electrode pull-up resistor, and fault-signal is drawn from V4 collector electrode.
In this short-circuit detection protection circuit, the drive singal that main controller sends is through being isolated into pulse signal, and high level opens IGBT, and low level turns off IGBT.When driving low level, C1 upper end Ua voltage is that zero, V3 turns off, and V4 is open-minded, and inverse signal is low level; Drive as high level, when IGBT opens and do not occur short circuit, the upper terminal potential Ua of C1 is that IGBT conduction voltage drop adds diode D1 tube voltage drop, and lower than voltage-stabiliser tube ZD1 value, V3 turns off, V4 conducting, and inverse signal is low level; When drive singal high level; when short circuit appears in IGBT conducting, IGBT conduction voltage drop increases sharply, and the upper terminal potential Ua of C1 reaches ZD1 breakdown threshold; V3 is open-minded; R11 left end drives high level to move low level to by D5, R6, V3, and IGBT gate pole is negative level, and IGBT turns off; protection IGBT avoids Damage by Short Circuit; V4 turns off because V3 opens simultaneously, and inverse signal is high level, exports fault-signal.
Surge voltage-suppressing circuit utilizes the collection emitter voltage of parallel IGBT to feed back, and improves gate potentials control IGBT turn off process by collector electrode reversal connection TVS and diode circuit clamp collection emitter voltage.This surge voltage-suppressing circuit comprises the TVS1 ~ TVS5 of series connection reversal connection to collector electrode, TVS5 anode links the gate pole of two parallel IGBTs respectively by two diode D11 and D12, another branch road of TVS5 anode is by resistance R12 and just meeting diode D13 and link before driving power amplifies, and the anode of TVS3 is connected with diode D13 anode by capacitance-resistance C2, R13.In the present embodiment, TVS puncture voltage is 200V, peak pulse power 600W (10/1000us).When parallel IGBT shutoff surge voltage is greater than 600V, the surge burr that amplitude is lower punctures TVS1, TVS2, TVS3, filtered by C2, R13, D13, when surge voltage is greater than 1000V, TVS1 ~ TVS5 all breakdown clamp collection emitter voltage Uce, the diode D11 connected with TVS5 and D12 conducting, electric current flows through gate pole, gate voltage raises without time delay, and IGBT turn off process slows down, and inhibits surge.Another road, TVS breakdown current is through R12 and D13 to driving prime, and by drive amplification, gate voltage is raised, IGBT turn off process slows down and reduces TVS electric current and power consumption.
It is emphasized that; embodiment described in the utility model is illustrative; instead of it is determinate; therefore the utility model comprises the embodiment be not limited to described in embodiment; every other execution modes drawn according to the technical solution of the utility model by those skilled in the art, belong to the scope of the utility model protection equally.
Claims (4)
1. the IGBT parallel drive in high-power frequency conversion speed regulating device and detection protective circuit; it is characterized in that: comprise IGBT synchronous driving in parallel and dynamic current equalizing circuit, short-circuit detection protection circuit and surge voltage-suppressing circuit; described short-circuit detection protection circuit on one side is connected with master controller by photoelectric isolating circuit; this short-circuit detection protection circuit other end to drive and dynamic current equalizing circuit is connected by surge voltage-suppressing circuit and IGBT are in parallel synchronous, and this IGBT synchronous driving in parallel and dynamic current equalizing circuit are connected with two IGBT of parallel connection.
2. the IGBT parallel drive in high-power frequency conversion speed regulating device according to claim 1 and detection protective circuit, it is characterized in that: described IGBT synchronous driving in parallel and dynamic current equalizing circuit comprise power amplifier V1, power amplifier V2, open and drive resistance Ron101, open and drive resistance Ron102, open and drive resistance Ron201, open and drive resistance Ron202, turn off and drive diode Doff101, turn off and drive diode Doff102, turn off and drive diode Doff201, turn off and drive diode Doff202, open and drive diode Don, turn off and drive resistance Roff and four IGBT gate pole limiter diode, opening one end after driving resistance Ron101 to drive diode Doff101 in parallel with shutoff is connected on the common emitter of two power amplifiers, the other end is connected on the gate pole of an IGBT, open drive resistance Ron102 with turn off drives diode Doff102 in parallel after one end be connected on the emitter of an IGBT, the other end drives diode Don by parallel opening, shutoff driving resistance Roff is connected to the ground and connects, opening one end after driving resistance Ron201 to drive diode Doff201 in parallel with shutoff is connected on the common emitter of two power amplifiers, the other end is connected on the gate pole of the 2nd IGBT, open drive resistance Ron202 with turn off drives diode Doff202 in parallel after one end be connected on the emitter of the 2nd IGBT, the other end drives diode Don by parallel opening, shutoff driving resistance Roff is connected to the ground and connects, four IGBT gate pole limiter diodes are connected respectively on the gate pole of two IGBT.
3. the IGBT parallel drive in high-power frequency conversion speed regulating device according to claim 1 and detection protective circuit, it is characterized in that: described short-circuit detection protection circuit comprises the high pressure recovery diode D1 that negative electrode is connected to parallel IGBT collector electrode, the current-limiting resistance R1 be connected with high pressure recovery diode D1 anode, current-limiting resistance R1 left end meets filter capacitor C1, again by resistance R2, Opposite direction connection diode D2 is connected to drive singal; Filter capacitor C1 two ends parallel diode D3 and resistance R3 is as discharge loop, filter capacitor C1 upper end arranges voltage stabilizing didoe ZD1 by diode D4 and threshold voltage and controls triode V3, the indirect resistance R4 of the be of triode V3, triode V3 collector electrode passes through pull-up resistor R5 on the one hand to positive supply, is connected to drive singal on the other hand by resistance R6 and reversal connection diode D5; Resistance R7, resistance R8 and triode V4 form fault return circuit, and resistance R7 is the resistance of triode V4 base radio, and R8 is triode V4 collector electrode pull-up resistor, and fault-signal is drawn from triode V4 collector electrode.
4. the IGBT parallel drive in high-power frequency conversion speed regulating device according to claim 1 and detection protective circuit, it is characterized in that: described surge voltage-suppressing circuit comprises five surge suppression devices of series connection reversal connection to IGBT collector electrode, surge suppression device TVS5 anode links the gate pole of two parallel IGBTs respectively by diode D11 and diode D12, another branch road of surge suppression device TVS5 anode is by resistance R12 and just connecing before diode D13 links Driver amplifier, the anode of surge suppression device TVS3 is by electric capacity C2, resistance R13 is connected with diode D13 anode.
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| CN201420674182.6U CN204216868U (en) | 2014-11-12 | 2014-11-12 | IGBT parallel drive in high-power frequency conversion speed regulating device and detection protective circuit |
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Cited By (7)
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| CN105743329A (en) * | 2016-03-23 | 2016-07-06 | 西安交通大学 | IGBT shunt-wound dynamic current-sharing circuit and control method |
| CN106817120A (en) * | 2017-01-12 | 2017-06-09 | 四川赛科安全技术有限公司 | Drive circuit with enhancing bus driver energy force-summing device short-circuit protection function |
| CN107181396A (en) * | 2017-05-05 | 2017-09-19 | 北京精密机电控制设备研究所 | A kind of paralleling MOS Guan Junliu and short-circuit protection circuit |
| CN108964427A (en) * | 2018-06-29 | 2018-12-07 | 西安翌飞核能装备股份有限公司 | A kind of driving circuit and its working method of high-power converter semiconductor devices |
| CN108988619A (en) * | 2018-06-22 | 2018-12-11 | 浙江海得新能源有限公司 | A kind of IGBT module driving circuit suitable for high-power inverter |
| CN110501625A (en) * | 2019-09-12 | 2019-11-26 | 荣信汇科电气技术有限责任公司 | A kind of IGBT saturation tube voltage drop on-line measurement circuit |
| CN110601510A (en) * | 2019-07-29 | 2019-12-20 | 宁波安信数控技术有限公司 | IGBT parallel drive adapter circuit and circuit board |
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- 2014-11-12 CN CN201420674182.6U patent/CN204216868U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743329A (en) * | 2016-03-23 | 2016-07-06 | 西安交通大学 | IGBT shunt-wound dynamic current-sharing circuit and control method |
| CN105743329B (en) * | 2016-03-23 | 2018-06-26 | 西安交通大学 | A kind of IGBT parallel connections dynamic flow equalizing circuit and control method |
| CN106817120A (en) * | 2017-01-12 | 2017-06-09 | 四川赛科安全技术有限公司 | Drive circuit with enhancing bus driver energy force-summing device short-circuit protection function |
| CN106817120B (en) * | 2017-01-12 | 2020-06-16 | 四川赛科安全技术有限公司 | Drive circuit with bus drive capability enhancement and short-circuit protection function of equipment |
| CN107181396A (en) * | 2017-05-05 | 2017-09-19 | 北京精密机电控制设备研究所 | A kind of paralleling MOS Guan Junliu and short-circuit protection circuit |
| CN107181396B (en) * | 2017-05-05 | 2019-06-18 | 北京精密机电控制设备研究所 | A kind of paralleling MOS Guan Junliu and short-circuit protection circuit |
| CN108988619A (en) * | 2018-06-22 | 2018-12-11 | 浙江海得新能源有限公司 | A kind of IGBT module driving circuit suitable for high-power inverter |
| CN108964427A (en) * | 2018-06-29 | 2018-12-07 | 西安翌飞核能装备股份有限公司 | A kind of driving circuit and its working method of high-power converter semiconductor devices |
| CN110601510A (en) * | 2019-07-29 | 2019-12-20 | 宁波安信数控技术有限公司 | IGBT parallel drive adapter circuit and circuit board |
| CN110501625A (en) * | 2019-09-12 | 2019-11-26 | 荣信汇科电气技术有限责任公司 | A kind of IGBT saturation tube voltage drop on-line measurement circuit |
| CN110501625B (en) * | 2019-09-12 | 2024-03-08 | 荣信汇科电气股份有限公司 | On-line measuring circuit for voltage drop of IGBT saturation tube |
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Effective date of registration: 20191008 Address after: 300000 No. 354, innovation Avenue, Binhai Science Park, Binhai high tech Zone, Binhai New Area, Tianjin Co-patentee after: TIANJIN RESEARCH INSTITUTE OF ELECTRIC SCIENCE Co.,Ltd. Patentee after: Tianjin Tianchuan electric drive Co.,Ltd. Address before: 300180, No. 174 Jintang Road, Hedong District, Tianjin Patentee before: TIANJIN RESEARCH INSTITUTE OF ELECTRIC SCIENCE Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20150318 |