CN108964427A - A kind of driving circuit and its working method of high-power converter semiconductor devices - Google Patents
A kind of driving circuit and its working method of high-power converter semiconductor devices Download PDFInfo
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- CN108964427A CN108964427A CN201810715275.1A CN201810715275A CN108964427A CN 108964427 A CN108964427 A CN 108964427A CN 201810715275 A CN201810715275 A CN 201810715275A CN 108964427 A CN108964427 A CN 108964427A
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- semiconductor devices
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1203—Circuits independent of the type of conversion
- H02H7/1206—Circuits independent of the type of conversion specially adapted to conversion cells composed of a plurality of parallel or serial connected elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses the driving circuits and its working method of semiconductor devices in a kind of high-power converter, including control signal processing unit, large capacity drive device unit and fault-signal processing and feedback unit, the control signal processing unit is used to external 1 tunnel driving signal generating 2 driving signals of the tunnel complementation with dead zone, is transferred to large capacity drive device unit；The large capacity drive device unit is connect with semiconductor devices, for receiving driving signal that control signal processing unit is sent and being sent to semiconductor devices after amplifying, the voltage value at each semiconductor devices both ends is obtained simultaneously, and voltage value is fed back into fault-signal processing and feedback unit；By large capacity drive device unit be simultaneously one or more semiconductor devices are driven; it ensure that the synchronism of semiconductor devices driving signal with this; improve the current sharing of semiconductor devices; and monitor the electric current of semiconductor devices on this basis and temperature and protected, it ensure that the safe and stable operation of high-power converter semiconductor devices.
Description
Technical field
The invention belongs to high-power converter fields, and in particular to a kind of driving of high-power converter semiconductor devices
Circuit and its working method.
Background technique
As power load capacity constantly rises, the application of high-power converter is promoted.Not high big of performance requirement
Power converter can realize by single big current semiconductor device, however big current semiconductor device because itself economize on electricity hold compared with
It cannot achieve higher switching frequency greatly and limit the performance of current transformer.The higher high-power converter of performance requirement can only pass through
More low current semiconductor devices are in parallel, to realize higher switching frequency raising performance and expand capacity.Semiconductor devices is simultaneously
Connection requires all semiconductor devices to flow, and equal process degree depends on institute's devices in parallel driving signal synchronism, institute's devices in parallel
The consistency of the consistency of switching process, the consistency of radiating condition and external connection circuit.
Chinese patent ZL201320506486.7 " a kind of high-power IGBT wired in parallel driving circuit " discloses a kind of big
Power IGBT module parallel driving circuit, including driving core and its driving expansion board.Equally may be implemented semiconductor devices and
Connection driving, but because of the response time of each driving expansion board inconsistent difference for directly resulting in semiconductor device switch movement in parallel
Step, so that dynamic current equalizing effect is poor.
Chinese patent ZL201610624444.1 " a kind of IGBT parallel current-equalizing circuit and its control method " discloses one kind
IGBT parallel current-equalizing circuit and its control method, method are based on measuring the time difference and stable state that each semiconductor devices is cut-off
Electric current is flowed finally by the driving signal time and driving signal amplitude of adjustment semiconductor devices with realizing, method is relatively multiple
The miscellaneous equivalent forward path in control increases delay, limits the performance of current transformer to a certain extent.And engineer application is promoted
Difficulty is higher.
Summary of the invention
In order to solve the problems in the existing technology, the object of the present invention is to provide partly lead in a kind of high-power converter
The driving circuit and its working method of body device, pass through large capacity drive device unit simultaneously be one or more semiconductor devices into
Row driving, ensure that the synchronism of semiconductor devices driving signal with this, improves the current sharing of semiconductor devices, and in this base
The electric current of semiconductor devices is monitored on plinth and temperature and is protected, and ensure that the safety of high-power converter semiconductor devices is steady
Fixed operation.
To achieve the goals above, the technical solution adopted by the present invention is that, a kind of high-power converter driving circuit wraps
It includes: control signal processing unit, large capacity drive device unit and fault-signal processing and feedback unit, in which:
The control signal processing unit is used to external 1 tunnel driving signal generating 2 drivings of the tunnel complementation with dead zone
Signal is transferred to large capacity drive device unit；
The large capacity drive device unit is connect with semiconductor devices, is sent for receiving control signal processing unit
Driving signal and be sent to semiconductor devices after amplifying, while obtaining the voltage value at each semiconductor devices both ends, and
Voltage value is fed back into fault-signal processing and feedback unit；
The fault-signal processing and feedback unit are used to monitor the electric current and temperature signal of semiconductor devices, receive simultaneously
The voltage value at each semiconductor devices both ends, and electric current, temperature and voltage value are compared with preset threshold value, when super
Fault-signal is sent when threshold value out to peripheral control unit.
It further include interface circuit, interface circuit connects for realizing fault-signal processing unit and feedback unit and control signal
The data interaction between processing unit and peripheral control unit is received, and interface circuit is provided with optical signal interface and electric signal connects
Mouthful.
The semiconductor devices is at least one, when semiconductor devices is more than one, between all semiconductor devices simultaneously
Connection.
The driving signal of the semiconductor devices is issued by a large capacity drive device unit, and semiconductor devices is single only big
Current semiconductor devices or more low current semiconductor devices of parallel connection.
The electric current of the big current semiconductor device is more than 600A, and the electric current of low current semiconductor devices is lower than 600A.
Protection threshold value in the fault-signal processing and feedback unit is according to different semiconductor devices and different devices
Part drop volume standard is adjusted；The inside maximum operating temperature of semiconductor power device is limited according to drop volume standard, so
Its loss is calculated in conjunction with voltage, electric current and the switching frequency of work afterwards, temperature is calculated referring again to internal thermal resistance parameter
Protection threshold value, in conjunction with semiconductor moment bear current capacity and drop volume standard obtain the protection threshold value of electric current, in conjunction with semiconductor
The electric current of device and the relationship of both end voltage obtain the protection threshold value of voltage according to drop volume standard.
A kind of working method of high-power converter driving circuit is received by control signal processing unit outer first
The 1 tunnel driving signal that portion's controller issues, and external 1 tunnel driving signal is generated into 2 driving signals of the tunnel complementation with dead zone, transmission
Large capacity drive device unit is given, large capacity drive device unit receives 2 tunnel complementations and amplifies with the driving signal in dead zone, and will
Amplified driving signal is sent to semiconductor devices, while obtaining the voltage value at each semiconductor devices both ends, and by voltage
Value feeds back to fault-signal processing and feedback unit, and fault-signal processing and feedback unit receive the voltage at semiconductor devices both ends
Value, meanwhile, monitor the electric current and temperature signal of semiconductor devices, and by electric current, temperature and voltage value and preset protection
Threshold value is compared, and fault-signal is sent when beyond protection threshold value to peripheral control unit
After peripheral control unit receives fault-signal, the enabled open signal of semiconductor devices is blocked at once, then originally
The enabled open signal that driving circuit is issued due to no peripheral control unit closes semiconductor devices and is allowed to be protected.
Compared with prior art, the present invention at least has the advantages that through large capacity drive device unit while being
One or more semiconductor devices are driven, and be ensure that the synchronism of semiconductor devices driving signal with this, are improved and partly lead
The current sharing of body device, while the scheme of compatible a big current semiconductor device and more low current semiconductor devices parallel connections,
In the application in parallel of more semiconductor devices, it can effectively guarantee the synchronism of each semiconductor device switch；On this basis
It monitors the electric current of all semiconductor devices and temperature and is protected；The control of this driving circuit and feedback signal are simplified, can
Simplify the signal wire cabling inside current transformer.
Protection threshold value in this driving circuit can be adjusted for different semiconductor devices and different drop volume standards,
When any semiconductor devices exceeds threshold value, peripheral control unit is fed back to, peripheral control unit feeds back halt instruction, accident is avoided to expand
Bigization.
The received control signal of this driving circuit and the compatible electric signal interface of fault feedback signal and optical signal interface, increase
Adding adaptability, the control signal and feedback signal in interface circuit have accomplished the compatibility of optical signal and electric signal interface circuit,
Applicability is expanded.This method is relatively easy, equally realizes and flows to a certain extent, by guaranteeing each semiconductor devices
Driving signal consistency is to flow, remaining optimization flowed depends on semiconductor devices consistency and external circuit determines.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of the functional module of the driving circuit of high-power converter of the invention.
Specific embodiment
In order to make the purpose of the present invention, the technical scheme and advantages are more clear, it is combined below by specific embodiment attached
Invention is further described in detail for figure.Obviously, described example is a part of example of the invention, rather than whole
Example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, shall fall within the protection scope of the present invention.
As shown in Figure 1, a kind of high-power converter driving circuit of the invention include: control signal processing unit,
Large capacity drive device unit and fault-signal processing and feedback unit, in which: control signal processing unit is used for outside 1
Road driving signal generates 2 driving signals of the tunnel complementation with dead zone, is transferred to large capacity drive device unit；Large capacity drive device unit
It is connect with semiconductor devices, for receiving driving signal that control signal processing unit is sent and being sent to after amplifying
Semiconductor devices, while obtaining the voltage value at each semiconductor devices both ends, and by voltage value feed back to fault-signal processing and
Feedback unit；
Fault-signal processing and feedback unit are used to monitor the electric current and temperature signal of semiconductor devices, while receiving each
The voltage value at semiconductor devices both ends, and electric current, temperature and voltage value are compared with preset threshold value, when beyond threshold
Fault-signal is sent when value to peripheral control unit；
It further include interface circuit, interface circuit connects for realizing fault-signal processing unit and feedback unit and control signal
The data interaction between processing unit and peripheral control unit is received, and interface circuit is provided with optical signal interface and electric signal connects
Mouthful.
Semiconductor devices in the present invention is at least one, when semiconductor devices is more than one, all semiconductor devices
Between it is in parallel, the driving signal of semiconductor devices is issued by a large capacity drive device unit, and semiconductor devices is single only big electric
More low current semiconductor devices of semiconductor devices or parallel connection are flowed, the electric current of big current semiconductor device is more than 600A, small
The electric current of current semiconductor devices is lower than 600A.In a certain embodiment of the invention, semiconductor devices IGBT.
In the present invention, protect threshold value according to different semiconductor devices and not in fault-signal processing and feedback unit
Same device drop volume standard is adjusted, and is limited according to drop volume standard the inside maximum operating temperature of semiconductor power device
System, is calculated its loss then in conjunction with the voltage, electric current and switching frequency of work, is calculated referring again to internal thermal resistance parameter
The protection threshold value of temperature；Current capacity is born in conjunction with semiconductor moment and drop volume standard obtains the protection threshold value of electric current, in conjunction with half
The electric current of conductor device and the relationship of both end voltage obtain the protection threshold value of voltage according to drop volume standard；It is set during difference
Different protection threshold values, realize the management and monitoring more refined, ensure that the security reliability of operation.
Working method of the invention is as follows, receives what peripheral control unit issued by control signal processing unit first
1 tunnel driving signal, and external 1 tunnel driving signal is generated into 2 driving signals of the tunnel complementation with dead zone, it is transferred to large capacity drive device
Unit, large capacity drive device unit receive 2 tunnel complementations and amplify with the driving signal in dead zone, and amplified driving is believed
Number it is sent to semiconductor devices, while obtaining the voltage value at each semiconductor devices both ends, and voltage value is fed back into failure letter
Number processing and feedback unit, fault-signal processing and feedback unit receive the voltage value at semiconductor devices both ends, meanwhile, monitoring half
The electric current and temperature signal of conductor device, and electric current, temperature and voltage value are compared with preset protection threshold value, when
Fault-signal is sent when beyond protection threshold value to peripheral control unit, informs semiconductor devices in peripheral control unit high-power converter
It breaks down, needs shutdown to avoid fault spread, after peripheral control unit receives fault-signal, block semiconductor device at once
The enabled open signal of part, fault-signal here can be optical signal or electric signal, and then this driving circuit is due to no outside
The enabled open signal that controller issues closes semiconductor devices and is allowed to be protected.
As shown in Figure 1, driving circuit has control signal processing unit, large capacity drive device unit, at fault-signal
Reason and feedback unit and interface circuit form, and the compatibility of optical signal electric signal interface, coprocessing are realized in interface circuit hardware
Three signals are driving signal, enable signal and fault-signal respectively, control signal processing unit according in interface circuit
1 tunnel driving signal generate 2 driving signals of the tunnel complementation with dead zone, act on large capacity drive device unit, while according to enabled
Signal judges whether enabled large capacity drive device cell operation to trigger semiconductor devices, when large capacity drive device unit is enabled
Afterwards, driving energy on the one hand is provided for semiconductor devices, on the one hand monitors its operating current；Because of operating current size and semiconductor
The main voltage across poles of device is directly related, therefore realizes the prison to its operating current by the main voltage across poles of detection semiconductor devices
It surveys, once being more than preset protection threshold value, fault-signal acts on fault-signal processing and feedback unit, on the one hand blocks control
On the other hand enable signal in signal processing unit passes through interface circuit reporting fault, fault-signal processing and feedback
Unit monitors the operating temperature of semiconductor devices simultaneously, and operating temperature is once more than preset threshold, and image current failure equally triggers
It protects and reporting fault, protection threshold value can be adjusted according to different semiconductor devices and different drop volume standards.
Claims (8)
1. a kind of high-power converter driving circuit characterized by comprising control signal processing unit, large capacity drive
Dynamic device unit and fault-signal processing and feedback unit, in which:
The control signal processing unit is used to external 1 tunnel driving signal generating 2 driving signals of the tunnel complementation with dead zone,
It is transferred to large capacity drive device unit；
The large capacity drive device unit is connect with semiconductor devices, the drive sent for receiving control signal processing unit
It moves signal and is sent to semiconductor devices after amplifying, while obtaining the voltage value at each semiconductor devices both ends, and will be electric
Pressure value feeds back to fault-signal processing and feedback unit；
The fault-signal processing and feedback unit are used to monitor the electric current and temperature signal of semiconductor devices, while receiving each
The voltage value at semiconductor devices both ends, and electric current, temperature and voltage value are compared with preset threshold value, when beyond threshold
Fault-signal is sent when value to peripheral control unit.
2. a kind of high-power converter driving circuit according to claim 1, which is characterized in that it further include interface circuit,
Interface circuit is for realizing fault-signal processing unit and feedback unit and control signal processing unit and peripheral control unit
Between data interaction, and interface circuit is provided with optical signal interface and electric signal interface.
3. a kind of high-power converter driving circuit according to claim 1, which is characterized in that the semiconductor devices is extremely
It is less one, it is in parallel between all semiconductor devices when semiconductor devices is more than one.
4. a kind of high-power converter driving circuit according to claim 1, it is characterised in that: the semiconductor devices
Driving signal is issued by a large capacity drive device unit, and semiconductor devices is single big current semiconductor device or parallel connection
More low current semiconductor devices.
5. a kind of high-power converter driving circuit according to claim 4, it is characterised in that: the high-current semiconductor
The electric current of device is more than 600A, and the electric current of low current semiconductor devices is lower than 600A.
6. a kind of high-power converter driving circuit according to claim 1, it is characterised in that: the fault-signal processing
And the protection threshold value in feedback unit is adjusted according to different semiconductor devices and different device drop volume standards.
7. a kind of working method of high-power converter driving circuit according to any one of claims 1 to 6, feature exist
In, the 1 tunnel driving signal issued first by control signal processing unit reception peripheral control unit, and external 1 tunnel is driven
Dynamic signal generates 2 driving signals of the tunnel complementation with dead zone, is transferred to large capacity drive device unit, and large capacity drive device unit receives
It is amplified to 2 tunnel complementations with the driving signal in dead zone, and amplified driving signal is sent to semiconductor devices, obtained simultaneously
The voltage value at each semiconductor devices both ends is taken, and voltage value is fed back into fault-signal processing and feedback unit, fault-signal
Processing and feedback unit receive the voltage value at semiconductor devices both ends, meanwhile, the electric current and temperature signal of semiconductor devices are monitored,
And be compared electric current, temperature and voltage value with preset protection threshold value, failure letter is sent when beyond protection threshold value
Number give peripheral control unit.
8. a kind of working method of high-power converter driving circuit according to claim 7, which is characterized in that work as outside
After controller receives fault-signal, the enabled open signal of semiconductor devices is blocked at once, then this driving circuit is due to nothing
The enabled open signal that peripheral control unit issues closes semiconductor devices and is allowed to be protected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810715275.1A CN108964427A (en) | 2018-06-29 | 2018-06-29 | A kind of driving circuit and its working method of high-power converter semiconductor devices |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810715275.1A CN108964427A (en) | 2018-06-29 | 2018-06-29 | A kind of driving circuit and its working method of high-power converter semiconductor devices |
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| CN108964427A true CN108964427A (en) | 2018-12-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110445102A (en) * | 2019-08-14 | 2019-11-12 | 上海英恒电子有限公司 | A kind of electronic RELAY devices and guard method |
| CN112327122A (en) * | 2019-07-17 | 2021-02-05 | 北京金风科创风电设备有限公司 | Driving signal detection device and method and converter controller |
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| CN112327122A (en) * | 2019-07-17 | 2021-02-05 | 北京金风科创风电设备有限公司 | Driving signal detection device and method and converter controller |
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Application publication date: 20181207 |