CN206894490U - With the MOSFET parallel driver circuits for flowing protection - Google Patents
With the MOSFET parallel driver circuits for flowing protection Download PDFInfo
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- CN206894490U CN206894490U CN201720417715.6U CN201720417715U CN206894490U CN 206894490 U CN206894490 U CN 206894490U CN 201720417715 U CN201720417715 U CN 201720417715U CN 206894490 U CN206894490 U CN 206894490U
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Abstract
The utility model discloses a kind of MOSFET parallel driver circuits for having and flowing protection, the drive circuit to be worked including at least one MOSFET as described in one group of one group of MOSFET parallel circuits in parallel formed and driving, also include the voltage collection circuit and logic or comparison circuit matched with each parallel circuit, each voltage collection circuit is used to gather voltage signal corresponding to each MOSFET in the parallel circuit, and logic or comparison circuit corresponding to being conveyed to, when the logic or comparison circuit judge one in the N number of voltage signal reference voltage for exceeding its reception, the drive signal output of drive circuit corresponding to the logic or comparison circuit output low level disconnection.The utility model deft design; realize the over-current detection in MOSFET applications in parallel to single MOSFET and protection; and then realize the Global Macros of MOSFET parallel circuit; for in terms of the system protection and reliability; further perfect MOSFET parallel technologies and application, make overcurrent protection to the parallel technology more comprehensively and system.
Description
Technical field
The utility model is related to a kind of MOSFET parallel driver circuits, especially it is a kind of have flow the MOSFET of protection simultaneously
Join drive circuit.
Background technology
With the development of electric automobile industry, the success or failure of the important component as electric automobile --- electric machine controller
Determine electric car it is good with it is bad.Electric machine controller is with generally having very high power density, because single MOSFET conducting
Electric current is smaller, so more larger power is obtained by the way of MOSFET is in parallel, to meet answering for low-voltage, high-current
Use occasion.
MOSFET drain current ID has negative temperature coefficient in theory, plays the role of automatic current equalizing and samming, in parallel connection
When without using balancing device electric current current-limiting resistance and thermo-compensator, but due to MOSFET inherent parameters and circuit parameter
It is unbalanced, can cause the problem of electric current distribution is uneven occur during the in parallel application of device, can cause when serious MOSFET overload and
Failure.
Improvement MOSFET current share schemes the most frequently used at present have following several：
1st, carried out from the small MOSFET of same model, same to batch, inner parameter dispersiveness in parallel.
2nd, by device symmetric configuration, connected up using low inductance, reduce impurity inductance and distribution capacity.
3rd, between MOSFET close proximity to using close thermal coupling, being placed on same fin, the temperature of device is tried one's best
Unanimously.
Due to being limited by technological level and product structure, above-mentioned several key points are difficult 100% in actual applications
It is guaranteed, therefore the overcurrent protection for MOSFET is just particularly important.
But whether being the overcurrent protection after current sensor sampling, or protected from the excessively stream after the sampling of MOSFET drive ends
Shield, is all only able to detect the total current of controller output end, and can not accomplish the overcurrent protection for single MOSFET, that is,
Say, traditional current sample and protection can not detect the stream effect after MOSFET parallel connections and effective excessively stream guarantor carried out to it
Shield.
Utility model content
The purpose of this utility model is exactly to solve the above-mentioned problems in the prior art, there is provided one kind, which has, to flow
The MOSFET parallel driver circuits of protection.
The purpose of this utility model is achieved through the following technical solutions：
With the MOSFET parallel driver circuits for flowing protection, including it is at least one in parallel being formed by one group of MOSFET and
Join the drive circuit of MOSFET work described in one group of circuit and driving, in addition to the voltage acquisition electricity matched with each parallel circuit
Road and logic or comparison circuit, each MOSFET that each voltage collection circuit is used to gather in the parallel circuit are corresponding
Voltage signal, and logic corresponding to being conveyed to or comparison circuit, when the logic or comparison circuit are judged in N number of voltage signal
One exceed its reception reference voltage when, the logic or comparison circuit output low level disconnect corresponding to drive circuit
Drive signal exports.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：
The parallel circuit is 2 and they are electric with a drive circuit, voltage collection circuit and logic or comparison respectively
Road connects and is collectively forming bridge loop and lower bridge loop, and the three-phase that the upper bridge loop and lower bridge loop are used for alternating current generator drives
An at least phase in dynamic circuit；
The drain electrode of each MOSFET in the upper bridge loop connects DC power anode by the voltage collection circuit, institute
State the grid of each MOSFET in bridge loop and upper bridge drive circuit is connected by a resistance respectively, in the upper bridge loop
Each MOSFET source electrode connects the U phase output terminals or V phase output terminals or W phase output terminals of alternating current generator；
The drain electrode of each MOSFET in the lower bridge loop connects the U phase output terminals or V phase output terminals or W phases of alternating current generator
Output end, the grid of each MOSFET in the lower bridge loop connects lower bridge drive circuit by a resistance respectively, under described
The source electrode of each MOSFET in bridge loop connects DC power cathode by voltage collection circuit.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：The voltage collection circuit bag
N number of sampling resistor is included,
One MOSFET of termination of each sampling resistor in upper bridge loop drain electrode and the logic compare
Circuit, another termination DC power anode of each sampling resistor；
One MOSFET of termination of each sampling resistor in lower bridge loop source electrode and the logic compare
Circuit, another termination DC power cathode of each sampling resistor.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：The sampling resistor is big work(
The metalfilmresistor of rate low resistance.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：The resistance of the sampling resistor
R meets equation below：
R=（V×N）/（IAlways×n）
Wherein, V is the maximum drain current I that single MOSFET is allowed to flow throughDMAXOn sampling resistor caused voltage or
Reference voltage, N be paralleling MOS FET quantity, IAlwaysFor total maximum output current, n is pre- allowance, and value is X% × IAlways, X takes
Nonnegative number.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：The X values 10-20 it
Between.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：The logic or comparison circuit
Including N number of comparator in parallel, the reverse input end of each comparator receives voltage signal corresponding to a MOSFET, each ratio
Positive input compared with device connects same reference voltage end, and the output end of each comparator is all connected with the drive circuit
Buffer.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：The reference voltage is by temperature
Compensation circuit generates, and the temperature-compensation circuit includes the divider resistance and temperature sampling resistance of concatenation, the divider resistance
One termination power end, one end ground connection of the temperature sampling resistance, their connection end is being commonly connected to each comparator just
To input.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：The temperature sampling resistance is
Negative tempperature coefficient thermistor is simultaneously disposed proximate to MOSEFT.
Preferably, it is described that there is the MOSFET parallel driver circuits for flowing protection, wherein：It is described have stream protection
MOSFET parallel driver circuits are at least applied in the drive circuit of low-voltage high-power electric machine controller.
The advantages of technical solutions of the utility model, is mainly reflected in：
The utility model deft design, circuit is simple, and the voltage gathered by sampling resistor flows to react single MOSFET
The drain current crossed, by multiple voltage signals compared with reference voltage, with reference to logic or Controlling principle carry out MOSFET
The outgoing management of drive signal, it is achieved thereby that the over-current detection to single MOSFET and protection in MOSFET applications in parallel, enter
And realize the Global Macros of parallel circuit, in terms of the system protection and reliability for, further perfect MOSFET is in parallel
Technology and application, make overcurrent protection to the parallel technology more comprehensively and system.
The structure of current sensor is eliminated, advantageously reduces cost；Simultaneously as intervened without software, therefore accordingly
Speed is fast, and reliability is high.
By preferred and resistance the control to sampling resistor, so as to be advantageous to avoid each branch current to flow through sampling resistor
After produce thermal losses.
Compensated due to combining temperature-compensation circuit, when MOSFET local environment temperature is higher, pass through temperature
Sampling, magnitude of voltage corresponding to the electric current of protection point can be reduced automatically, so as to play the effect of protection controller hardware；Conversely,
When the environment temperature residing for MOSFET is relatively low, magnitude of voltage corresponding to the electric current of automatic rise protection point, it is allowed to which controller exports
Bigger electric current, therefore the working condition of complexity is adapted to, simultaneously because to the preferred of temperature sampling resistance and to partial pressure electricity
The resistance research of resistance, so as to ensure when being protected, can therefore it be carried out with temperature using curent change as main protection factor
Trickle compensation.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model；
Fig. 2 is the circuit diagram of lower bridge loop in the utility model embodiment 1；
Fig. 3 is the circuit diagram of lower bridge loop in the utility model embodiment 2.
Embodiment
The purpose of this utility model, advantage and feature, figure will be carried out by the non-limitative illustration of preferred embodiment below
Show and explain.These embodiments are only the prominent examples using technical solutions of the utility model, all to take equivalent substitution or wait
Effect conversion and formed technical scheme, all fall within the requires of the utility model protection within the scope of.
Embodiment 1
The utility model is disclosed with the MOSFET parallel driver circuits for flowing protection, at least applied to the big work(of low-voltage
In the drive circuit of rate electric machine controller.
It is described that there is the MOSFET parallel driver circuits for flowing protection to be formed including at least one by one group of MOSFET is in parallel
Parallel circuit 1 and being used for of being matched with each parallel circuit 1 drive the drive circuit 2 of its work, as shown in Figure 1, institute
Parallel circuit 1 is stated as 2, they connect one drive circuit 2 respectively and following voltage collection circuits 3, logic or comparison are electric
Road 4 and bridge loop and lower bridge loop are cooperatively formed jointly.
The upper bridge loop and lower bridge loop are at least for the phase in the three-phase drive circuit of alternating current generator, to be applied to
Exemplified by U phases, the drain electrode of each MOSFET in the upper bridge loop meets DC power anode DC+, institute by voltage collection circuit
State the grid of each MOSFET in bridge loop and upper bridge drive circuit is connected by a resistance respectively, in the upper bridge loop
Each MOSFET source electrode connects U phase inputs.
As shown in Figure 2, the drain electrode of each MOSFET in the lower bridge loop meets the U phase output terminal U of alternating current generator, institute
The grid of each MOSFET in lower bridge loop is stated respectively by the lower bridge drive circuit of resistance RG1, RG2 ... a RGN connections, institute
The source electrode for stating each MOSFET in lower bridge loop meets DC power cathode DC- by voltage collection circuit 3.
Wherein, the upper bridge drive circuit and lower bridge drive circuit are respectively used to drive the connected parallel circuit
MOSFET work in 1, the input including buffer U2, the buffer U2 connects MOSFET gate-drives letter for they
Number end GATE, the output end of the buffer U2 each MOSFET of RG2 ... RGN connections grid, passes through respectively by resistance RG1
Whether the turn-on and turn-off of the buffer U2 control the output of the MOSFET gate electrode drive signals.Each buffer
U2 turn-on and turn-off are controlled by the voltage collection circuit 3 and logic that are matched with each parallel circuit 1 or comparison circuit 4,
Each voltage collection circuit 3 is used to gather voltage signal corresponding to each MOSFET in the parallel circuit 1, and conveys
To corresponding logic or comparison circuit 4, the logic or comparison circuit 4 judge that one in N number of voltage signal exceedes its reception
Reference voltage when, the logic or comparison circuit 4 export low level disconnect corresponding to drive circuit 1 drive signal output.
Specifically, as shown in Figure 2, each voltage collection circuit 3 includes N number of sampling resistor RS1, RS2 ...
RSN, the one of each sampling resistor terminates a comparator in a MOSFET source electrode and the logic or comparison circuit 4,
Another termination DC power cathode DC- of each sampling resistor.
Voltage collection circuit 3 in the upper bridge loop（Not shown in figure）It is close with the structure in lower bridge loop, principle
Identical, difference is：One one MOSFET of termination of each sampling resistor in upper bridge loop drain electrode, each sampling electricity
Another termination DC power anode DC+ of resistance.
Sampled different from traditional current sensor, sampling electricity of this circuit in the high-power small resistance of MOSFET source series connection
RS1, RS2 ... RSn are hindered, the drain current ID of each parallel branch is detected, according to equation below
V1=ID1 × RS1, V2=ID2 × RS2 ... ... Vn=IDn × RSn
Sampled voltage corresponding to each parallel branch can be obtained by sampling resistor RS1, RS2 ... RSN, inputted to institute
State logic or comparison circuit carries out excessively stream triggering, not only eliminate current sensor, reduce cost, while do not need software to be situated between
Enter, response is fast, and reliability is high.Also, during practical application, preferably described sampling resistor RS1, RS2 ... RSN are high-power low value
Metalfilmresistor, its resistance should be as far as possible small, in order to avoid each branch current produces thermal losses after flowing through sampling resistor, corresponding, institute
The resistance R for stating sampling resistor RS1, RS2 ... RSN meets equation below：
R=（V×N）/（IAlways×n）
Wherein, V is the maximum drain current I that single MOSFET is allowed to flow throughDMAXOn sampling resistor caused voltage or
Reference voltage, N be paralleling MOS FET quantity, IAlwaysFor total maximum output current, n is pre- allowance, and value is X% × IAlways, X takes
Nonnegative number, preferably described X values are between 10 and 20.
For example, when the maximum output current of permission is 200A, totally 5 MOSFET parallel connections, single MOSFET is calculated most
Big drain current IDMAXPreferably 45A, if the reference voltage selects 90mV, 2m Ω/5W sampling resistor should be chosen.
Further, as shown in Figure 2, each logic or comparison circuit 4 include N number of comparator U1, U2 ... in parallel
UN, the reverse input end of each comparator connect a MOSFET and sampling resistor connection end and received corresponding to the MOSFET
Voltage signal, the positive input of each comparator meet same reference voltage end VREF, and the output end of each comparator is equal
Connect the buffer U2 in the drive circuit 1.
During practical application, according to the resistance of sampling resistor and the maximum drain current I of single MOSFET permissionsDMAX, can be with
The reference voltage of comparison circuit is determined, specifically, reference voltage should be equal to the maximum drain that single MOSFET is allowed to flow through
Electric current IDMAX（Threshold current）Caused voltage, wherein I on sampling resistorDMAXValue should be equal to total maximum output current
IOUTDivided by paralleling MOS FET quantity N, and reserved 10% ~ 20% surplus, i.e.,：
IDMAX = (110%~120%) × IOUT / N
The magnitude of voltage of this general reference voltage is all very low, it is necessary to which accurate low tension potential source provides, in above-mentioned case
Corresponding reference voltage should be 90mV.
During whole circuit work, its process is as follows：
Each sampling resistor is in real time by analog voltage signal input is connected thereto caused by current sample in each branch road in parallel
Comparator, each comparator produces compared with reference voltage set in advance the analog voltage signal in overvoltage protection letter
Number, the control logic of the logic or comparison circuit 4 is as described below：
When voltage signal corresponding to all branch currents is respectively less than the reference voltage, the logic or comparison circuit 4
Export as high level, the buffer U2 in corresponding drive circuit 2 keeps open-minded, and MOSFET gate electrode drive signals keep normal defeated
Go out.
When voltage signal corresponding to any one branch current exceedes reference voltage set in advance, the logic or ratio
It is low level compared with the output of circuit 4, so as to close the buffer U2 in corresponding drive circuit, so as to turn off MOSFET gate-drives letter
Number output.
Embodiment 2
The overall structure of the present embodiment is close with embodiment 1, and difference is：As shown in Figure 3, the reference voltage is by temperature
Compensation circuit generation is spent, the temperature-compensation circuit includes the divider resistance R4 and temperature sampling resistance R5 of concatenation, the partial pressure
A resistance R4 termination power end, one end ground connection DC- of the temperature sampling resistance R5, their connection end is commonly connected to often
The positive input of individual comparator.
Also, it is preferred that the temperature sampling resistance R5 is negative tempperature coefficient thermistor, i.e., its resistance is with the liter of temperature
It is high and reduces, raised with the reduction of temperature, it is laid out in close MOSFET position, passes through what is formed with divider resistance R4
PCB temperature near electric bridge real-time sampling MOSFET, so as to indirectly reflect MOSFET shell temperature.
In addition, after negative tempperature coefficient thermistor is selected, temperature can be adjusted by changing divider resistance R4 resistance
The sensitivity of compensation is spent, when divider resistance R4 resistance is closer to the excursion of temperature sampling resistance R5 resistances, temperature is mended
The sensitivity for repaying circuit is higher.
And in the utility model, in order that curent change turns into principal element, temperature factor is only used as trickle compensation,
Therefore the sensitivity of temperature-compensation circuit should keep low-level, i.e., the prevention amplitude of variation of described temperature sampling resistance will not cause
There is change by a relatively large margin in the reference voltage, and corresponding, the resistance for designing the divider resistance R4 is adopted away from the temperature
Sample resistance R5 change in resistance scope is set so as to be no more than according to the second comparison voltage V2 of equation below calculating amplitude of variation
Definite value,
V2=VCC×R5/（R4+R5）
Wherein, VCC is power end VCC input voltages.
During specific works, its principle is close with embodiment, and difference is：The reference voltage is by the temperature-compensation circuit
Gather and export in real time and produce comparison signal to each comparator,
In the case where temperature is constant, the voltage of the temperature-compensation circuit generation is constant, its operation principle and embodiment
One is identical.
In the case where electric current is constant, when MOSFET environment temperature rise, the negative tempperature coefficient thermistor
Resistance diminishes, corresponding, and the reference voltage reduces, and because electric current is constant, each comparator output voltage keeps constant, when
When voltage signal corresponding to any one branch current exceedes the reference voltage of temperature-compensation circuit generation, the logic or compare
The output of circuit 4 is low level, so as to close the buffer U2 in corresponding drive circuit, so as to turn off MOSFET gate electrode drive signals
Output.The utility model still has numerous embodiments, all technologies formed using equivalents or equivalent transformation
Scheme, all fall within the scope of protection of the utility model.
Claims (10)
1. with the MOSFET parallel driver circuits for flowing protection, including at least one parallel connection formed by one group of MOSFET parallel connection
Circuit（1）And the drive circuit of MOSFET work described in one group of driving（2）, it is characterised in that：Also include and each parallel circuit
（1）The voltage collection circuit of matching（3）With logic or comparison circuit（4）, each voltage collection circuit（3）For gathering
State parallel circuit（1）In each MOSFET corresponding to voltage signal, and logic corresponding to being conveyed to or comparison circuit（4）, when
The logic or comparison circuit（4）When judging one in the N number of voltage signal reference voltage for exceeding its reception, the logic or
Comparison circuit（4）Export drive circuit corresponding to low level disconnection（1）Drive signal output.
2. according to claim 1 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The parallel connection
Circuit（1）For 2 and they respectively with a drive circuit（2）, voltage collection circuit（3）And logic or comparison circuit（4）Even
Connect and be collectively forming bridge loop and lower bridge loop, the upper bridge loop and lower bridge loop are used for the three-phase drive electricity of alternating current generator
An at least phase in road；
The drain electrode of each MOSFET in the upper bridge loop connects DC power anode by the voltage collection circuit（DC+）,
The grid of each MOSFET in the upper bridge loop is connected by a resistance go up bridge drive circuit respectively, in the upper bridge loop
Each MOSFET source electrode connect the U phase output terminals or V phase output terminals or W phase output terminals of alternating current generator；
The drain electrode of each MOSFET in the lower bridge loop connects the U phase output terminals of alternating current generator or V phase output terminals or W phases export
Hold, the grid of each MOSFET in the lower bridge loop passes through a resistance and connects lower bridge drive circuit respectively, and the lower bridge returns
The source electrode of each MOSFET in road connects DC power cathode by voltage collection circuit（DC-）.
3. according to claim 2 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The voltage
Acquisition Circuit（3）Including N number of sampling resistor（RS1, RS2 ... RSN）, one end of each sampling resistor in the upper bridge loop
Connect MOSFET drain electrode and the logic or comparison circuit（4）, another termination DC power anode of each sampling resistor
（DC+）；
One one MOSFET of termination of each sampling resistor in lower bridge loop source electrode and the logic or comparison circuit
（4）, another termination DC power cathode of each sampling resistor（DC-）.
4. according to claim 3 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The sampling
Resistance（RS1, RS2 ... RSN）For the metalfilmresistor of high-power low value.
5. according to claim 3 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The sampling
Resistance（RS1, RS2 ... RSN）Resistance R meet equation below：
R=（V×N）/（IAlways×n）
Wherein, V is the maximum drain current I that single MOSFET is allowed to flow throughDMAXCaused voltage or reference electricity on sampling resistor
Pressure, N be paralleling MOS FET quantity, IAlwaysFor total maximum output current, n is pre- allowance, and value is X% × IAlways, the negated negatives of X.
6. according to claim 5 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The X takes
Value is between 10-20.
7. according to claim 2 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The logic
Or comparison circuit（4）Including N number of comparator in parallel（U1,U2,…UN）, the reverse input end reception one of each comparator
Voltage signal corresponding to MOSFET, the positive input of each comparator connect same reference voltage end（VREF）, each ratio
Output end compared with device is all connected with the drive circuit（1）In buffer（U2）.
8. according to claim 7 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The reference
Voltage is by temperature-compensation circuit（4）Generation, the temperature-compensation circuit（4）Divider resistance including concatenation（R4）And temperature sampling
Resistance（R5）, the divider resistance（R4）One termination power end, the temperature sampling resistance（R5）One end ground connection, they
Connection end is commonly connected to each comparator（U1）Positive input.
9. according to claim 8 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The temperature
Sampling resistor（R5）It is disposed proximate to for negative tempperature coefficient thermistor and with MOSEFT.
10. the MOSFET parallel driver circuits that having according to claim 1-9 is any flows protection, it is characterised in that：
The driving electricity that there is the MOSFET parallel driver circuits for flowing protection at least applied to low-voltage high-power electric machine controller
Lu Zhong.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720417715.6U CN206894490U (en) | 2017-04-20 | 2017-04-20 | With the MOSFET parallel driver circuits for flowing protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720417715.6U CN206894490U (en) | 2017-04-20 | 2017-04-20 | With the MOSFET parallel driver circuits for flowing protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206894490U true CN206894490U (en) | 2018-01-16 |
Family
ID=61324644
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720417715.6U Withdrawn - After Issue CN206894490U (en) | 2017-04-20 | 2017-04-20 | With the MOSFET parallel driver circuits for flowing protection |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972737A (en) * | 2017-04-20 | 2017-07-21 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
| CN108964427A (en) * | 2018-06-29 | 2018-12-07 | 西安翌飞核能装备股份有限公司 | A kind of driving circuit and its working method of high-power converter semiconductor devices |
-
2017
- 2017-04-20 CN CN201720417715.6U patent/CN206894490U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972737A (en) * | 2017-04-20 | 2017-07-21 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
| CN106972737B (en) * | 2017-04-20 | 2023-06-23 | 天索（苏州）控制技术有限公司 | MOSFET parallel driving circuit with current sharing protection |
| CN108964427A (en) * | 2018-06-29 | 2018-12-07 | 西安翌飞核能装备股份有限公司 | A kind of driving circuit and its working method of high-power converter semiconductor devices |
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