CN106972737A - With the MOSFET parallel driver circuits for flowing protection - Google Patents
With the MOSFET parallel driver circuits for flowing protection Download PDFInfo
- Publication number
- CN106972737A CN106972737A CN201710260601.XA CN201710260601A CN106972737A CN 106972737 A CN106972737 A CN 106972737A CN 201710260601 A CN201710260601 A CN 201710260601A CN 106972737 A CN106972737 A CN 106972737A
- Authority
- CN
- China
- Prior art keywords
- mosfet
- circuit
- parallel
- voltage
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Control Of Direct Current Motors (AREA)
- Electronic Switches (AREA)
Abstract
Present invention is disclosed a kind of MOSFET parallel driver circuits for having and flowing protection, the drive circuit of MOSFET work described in one group of the parallel circuit formed including at least one as one group of MOSFET parallel connection and driving, also include the voltage collection circuit and logic or comparison circuit matched with each parallel circuit, each voltage collection circuit is used to gather the corresponding voltage signals of each MOSFET in the parallel circuit, and it is conveyed to corresponding logic or comparison circuit, when the logic or comparison circuit judge one in the N number of voltage signal reference voltage for exceeding its reception, the logic or comparison circuit output low level disconnect the drive signal output of corresponding drive circuit.Deft design of the present invention; circuit is simple; realize the over-current detection in MOSFET parallel connection applications to single MOSFET and protection; and then realize the Global Macros of MOSFET parallel circuit; for in terms of the system protection and reliability; further perfect MOSFET parallel technologies and application, make overcurrent protection to the parallel technology more comprehensively and system.
Description
Technical field
It is especially a kind of that there is the MOSFET parallel connections for flowing protection to drive the present invention relates to a kind of MOSFET parallel driver circuits
Dynamic circuit.
Background technology
With the development of electric automobile industry, the important component of electric automobile is used as --- the success or failure of electric machine controller
Determine electric car it is good with it is bad.Electric machine controller is with generally having very high power density, because single MOSFET conducting
Electric current is smaller, so more larger power is obtained by the way of MOSFET is in parallel, to meet answering for low-voltage, high-current
Use occasion.
MOSFET drain current ID has negative temperature coefficient in theory, plays the role of automatic current equalizing and samming, in parallel connection
When without using balancing device electric current current-limiting resistance and thermo-compensator, but due to MOSFET inherent parameters and circuit parameter
It is unbalanced, can cause the problem of electric current distribution is uneven occur during device parallel connection application, can cause when serious MOSFET overload and
Failure.
Improvement MOSFET current share schemes the most frequently used at present have following several：
1st, carried out from the small MOSFET of same model, same to batch, inner parameter dispersiveness in parallel.
2nd, by device symmetric configuration, connected up using low inductance, reduce impurity inductance and distribution capacity.
3rd, between MOSFET close proximity to using close thermal coupling, being placed on same fin, the temperature of device is tried one's best
Unanimously.
Due to being limited by technological level and product structure, above-mentioned several key points are difficult 100% in actual applications
It is guaranteed, therefore is just particularly important for MOSFET overcurrent protection.
But whether being the overcurrent protection after current sensor sampling, or protected from the excessively stream after the sampling of MOSFET drive ends
Shield, is all only able to detect the total current of controller output end, and can not accomplish the overcurrent protection for single MOSFET, that is,
Say, traditional current sample and protection can not detect the stream effect after MOSFET parallel connections and effective excessively stream carried out to it and protect
Shield.
The content of the invention
The purpose of the present invention is exactly to have stream protection there is provided one kind to solve the above-mentioned problems in the prior art
MOSFET parallel driver circuits.
The purpose of the present invention is achieved through the following technical solutions：
With the MOSFET parallel driver circuits for flowing protection, including at least one parallel connection formed by one group of MOSFET parallel connection is electric
The drive circuit of MOSFET work described in one group of road and driving, in addition to the voltage collection circuit that is matched with each parallel circuit and
Logic or comparison circuit, each voltage collection circuit are used to gather the corresponding electricity of each MOSFET in the parallel circuit
Signal is pressed, and is conveyed to corresponding logic or comparison circuit, when the logic or comparison circuit judge one in N number of voltage signal
During individual reference voltage more than its reception, the logic or comparison circuit output low level disconnect the driving of corresponding drive circuit
Signal output.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：
The parallel circuit is 2 and they connect with a drive circuit, voltage collection circuit and logic or comparison circuit respectively
Connect and be collectively forming bridge loop and lower bridge loop, the upper bridge loop and lower bridge loop are used for the three-phase drive electricity of alternating current generator
An at least phase in road；
The drain electrode of each MOSFET in the upper bridge loop connects DC power anode by the voltage collection circuit, it is described on
The grid of each MOSFET in bridge loop connects each in upper bridge drive circuit, the upper bridge loop by a resistance respectively
MOSFET source electrode connects the U phase output terminals or V phase output terminals or W phase output terminals of alternating current generator；
The U phase output terminals or V phase output terminals or W phases that the drain electrode of each MOSFET in the lower bridge loop connects alternating current generator are exported
The grid of each MOSFET in end, the lower bridge loop connects lower bridge drive circuit by a resistance respectively, and the lower bridge is returned
The source electrode of each MOSFET in road connects DC power cathode by voltage collection circuit.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：The voltage collection circuit bag
N number of sampling resistor is included,
One MOSFET of termination of each sampling resistor in upper bridge loop drain electrode and the logic or comparison circuit,
Another termination DC power anode of each sampling resistor；
One one MOSFET of termination of each sampling resistor in lower bridge loop source electrode and the logic or comparison circuit,
Another termination DC power cathode of each sampling resistor.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：The sampling resistor is big work(
The metalfilmresistor of rate low resistance.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：The resistance of the sampling resistor
R meets equation below：
R=（V×N）/（IAlways×n）
Wherein, V is the maximum drain current I that single MOSFET is allowed to flow throughDMAXThe voltage produced on sampling resistor or reference
Voltage, N is paralleling MOS FET quantity, IAlwaysFor total maximum output current, n is pre- allowance, and value is X% × IAlways, X is negated to be born
Number.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：The X values 10-20 it
Between.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：The logic or comparison circuit
Including N number of comparator in parallel, the reverse input end of each comparator receives the corresponding voltage signals of a MOSFET, each ratio
Positive input compared with device connects same reference voltage end, and the output end of each comparator is all connected with the drive circuit
Buffer.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：The reference voltage is by temperature
Compensation circuit is generated, and the temperature-compensation circuit includes the divider resistance and temperature sampling resistance of concatenation, the divider resistance
One termination power end, one end ground connection of the temperature sampling resistance, their connection end is being commonly connected to each comparator just
To input.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：The temperature sampling resistance is
Negative tempperature coefficient thermistor is simultaneously disposed proximate to MOSEFT.
It is preferred that, described has the MOSFET parallel driver circuits for flowing protection, wherein：It is described have stream protection
MOSFET parallel driver circuits are at least applied in the drive circuit of low-voltage high-power electric machine controller.
The advantage of technical solution of the present invention is mainly reflected in：
Deft design of the present invention, circuit is simple, and the voltage gathered by sampling resistor reacts the drain electrode that single MOSFET flows through
Electric current, multiple voltage signals and reference voltage are compared, with reference to logic or Controlling principle carry out MOSFET drive signals
Outgoing management, it is achieved thereby that over-current detection to single MOSFET and protection in MOSFET parallel connection applications, and then realize
The Global Macros of parallel circuit, in terms of the system protection and reliability for, further perfect MOSFET parallel technologies and should
With making overcurrent protection to the parallel technology more comprehensively and system.
The structure of current sensor is eliminated, cost is advantageously reduced；Simultaneously as without software intervention, therefore accordingly
Speed is fast, and reliability is high.
By preferred and resistance the control to sampling resistor, so as to be conducive to avoiding each branch current from flowing through sampling resistor
After produce thermal losses.
Compensated due to combining temperature-compensation circuit, when MOSFET local environment temperature is higher, pass through temperature
Sampling, the corresponding magnitude of voltage of electric current of protection point can be reduced automatically, so as to play the effect of protection controller hardware；Conversely,
When the environment temperature residing for MOSFET is relatively low, the corresponding magnitude of voltage of electric current of automatic rise protection point, it is allowed to which controller is exported
Bigger electric current, therefore the working condition of complexity is adapted to, simultaneously because to the preferred of temperature sampling resistance and to partial pressure electricity
Therefore the resistance research of resistance, so as to ensure when being protected, can be carried out using curent change as main protection factor with temperature
Trickle compensation.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the circuit diagram of lower bridge loop in the embodiment of the present invention 1；
Fig. 3 is the circuit diagram of lower bridge loop in the embodiment of the present invention 2.
Embodiment
The purpose of the present invention, advantage and feature, will be carried out by the non-limitative illustration of preferred embodiment below diagram and
Explain.These embodiments are only the prominent examples using technical solution of the present invention, it is all take equivalent substitution or equivalent transformation and
The technical scheme of formation, all falls within the scope of protection of present invention.
Embodiment 1
Present invention is disclosed with the MOSFET parallel driver circuits for flowing protection, at least applied to low-voltage high-power motor control
In the drive circuit of device processed.
It is described that there is the MOSFET parallel driver circuits for flowing protection to be formed including at least one by one group of MOSFET parallel connection
Parallel circuit 1 and being used for of being matched with each parallel circuit 1 drive the drive circuit 2 of its work, as shown in Figure 1, institute
Parallel circuit 1 is stated for 2, they connect one drive circuit 2 respectively and following voltage collection circuits 3, logic or comparison are electric
Road 4 and bridge loop and lower bridge loop are cooperatively formed jointly.
The upper bridge loop and lower bridge loop are at least for the phase in the three-phase drive circuit of alternating current generator, to be applied to
Exemplified by U phases, the drain electrode of each MOSFET in the upper bridge loop meets DC power anode DC+, institute by voltage collection circuit
The grid for stating each MOSFET in bridge loop is connected in upper bridge drive circuit, the upper bridge loop by a resistance respectively
Each MOSFET source electrode connects U phase inputs.
As shown in Figure 2, the drain electrode of each MOSFET in the lower bridge loop meets the U phase output terminal U of alternating current generator, institute
The grid for stating each MOSFET in lower bridge loop descends bridge drive circuit, institute by resistance RG1, RG2 ... a RGN connections respectively
The source electrode for stating each MOSFET in lower bridge loop meets DC power cathode DC- by voltage collection circuit 3.
Wherein, the upper bridge drive circuit and lower bridge drive circuit are respectively used to the connected parallel circuit of driving
MOSFET work in 1, their inputs including buffer U2, the buffer U2 connect MOSFET gate-drives letter
Number end GATE, the output end of the buffer U2 is respectively by resistance RG1, and each MOSFET of RG2 ... RGN connections grid passes through
The turn-on and turn-off of the buffer U2 come control the MOSFET gate electrode drive signals output whether.Each buffer
U2 turn-on and turn-off are controlled by the voltage collection circuit 3 and logic or comparison circuit 4 that are matched with each parallel circuit 1,
Each voltage collection circuit 3 is used to gather the corresponding voltage signals of each MOSFET in the parallel circuit 1, and conveys
To corresponding logic or comparison circuit 4, the logic or comparison circuit 4 judge that one in N number of voltage signal exceedes its reception
Reference voltage when, the logic or the output low level of comparison circuit 4 disconnect the drive signal output of corresponding drive circuit 1.
Specifically, as shown in Figure 2, each voltage collection circuit 3 includes N number of sampling resistor RS1, RS2 ...
A comparator in RSN, one MOSFET of termination of each sampling resistor source electrode and the logic or comparison circuit 4,
Another termination DC power cathode DC- of each sampling resistor.
Voltage collection circuit 3 in the upper bridge loop（Not shown in figure）It is close with the structure in lower bridge loop, principle
Identical, difference is：One one MOSFET of termination of each sampling resistor in upper bridge loop drain electrode, each sampling electricity
Another termination DC power anode DC+ of resistance.
Sampled different from traditional current sensor, sampling electricity of this circuit in the high-power small resistance of MOSFET source series connection
RS1, RS2 ... RSn are hindered, the drain current ID of each parallel branch is detected, according to equation below
V1=ID1 × RS1, V2=ID2 × RS2 ... ... Vn=IDn × RSn
Can be by sampling resistor RS1, RS2 ... RSN obtain the sampled voltage corresponding to each parallel branch, and input is patrolled to described
Collect or comparison circuit carry out excessively stream triggering, not only eliminate current sensor, reduce cost, intervened without the need for software,
Response is fast, and reliability is high.Also, during practical application, preferably described sampling resistor RS1, RS2 ... RSN are high-power low value
Metalfilmresistor, its resistance should be as far as possible small, in case each branch current, which flows through, produces thermal losses after sampling resistor, it is corresponding, it is described
Sampling resistor RS1, RS2 ... RSN resistance R meet equation below：
R=（V×N）/（IAlways×n）
Wherein, V is the maximum drain current I that single MOSFET is allowed to flow throughDMAXThe voltage produced on sampling resistor or reference
Voltage, N is paralleling MOS FET quantity, IAlwaysFor total maximum output current, n is pre- allowance, and value is X% × IAlways, X is negated to be born
Number, preferably described X values are between 10 and 20.
For example, when the maximum output current of permission is 200A, totally 5 MOSFET parallel connections calculate single MOSFET most
Big drain current IDMAXPreferably 45A, if the reference voltage selects 90mV, should choose 2m Ω/5W sampling resistor.
Further, as shown in Figure 2, each logic or comparison circuit 4 include N number of comparator U1, U2 ... in parallel
UN, the reverse input end of each comparator connects the connection end of a MOSFET and sampling resistor and to receive the MOSFET corresponding
Voltage signal, the positive input of each comparator meets same reference voltage end VREF, and the output end of each comparator is equal
Connect the buffer U2 in the drive circuit 1.
During practical application, the maximum drain current I allowed according to the resistance of sampling resistor and single MOSFETDMAX, can be with
The reference voltage of comparison circuit is determined, specifically, reference voltage should be equal to the maximum drain that single MOSFET is allowed to flow through
Electric current IDMAX（Threshold current）The voltage produced on sampling resistor, wherein IDMAXValue should be equal to total maximum output current
IOUTDivided by paralleling MOS FET quantity N, and reserved 10% ~ 20% surplus, i.e.,：
IDMAX = (110%~120%) × IOUT / N
The magnitude of voltage of this general reference voltage is all very low, it is necessary to accurate low tension potential source is provided, correspondence in above-mentioned case
Reference voltage should be 90mV.
During whole circuit work, its process is as follows：
The analog voltage signal that each sampling resistor in real time produces current sample in each branch road in parallel inputs connected ratio
Compared with device, the analog voltage signal and reference voltage set in advance are compared generation overvoltage protection signal by each comparator,
The logic or the control logic of comparison circuit 4 are as described below：
When the corresponding voltage signal of all branch currents is respectively less than the reference voltage, the logic or comparison circuit 4 are exported
For high level, the buffer U2 in corresponding drive circuit 2 keeps open-minded, and MOSFET gate electrode drive signals keep normal output.
When the corresponding voltage signal of any one branch current exceedes reference voltage set in advance, the logic or ratio
Low level is output as compared with circuit 4, so that the buffer U2 in correspondence drive circuit is closed, so as to turn off MOSFET gate-drives letter
Number output.
Embodiment 2
The overall structure of the present embodiment is close with embodiment 1, and difference is：As shown in Figure 3, the reference voltage is mended by temperature
Circuit evolving is repaid, the temperature-compensation circuit includes the divider resistance R4 and temperature sampling resistance R5 of concatenation, the divider resistance
A R4 termination power end, one end ground connection DC- of the temperature sampling resistance R5, their connection end is commonly connected to each ratio
Compared with the positive input of device.
Also, it is preferred that the temperature sampling resistance R5 is negative tempperature coefficient thermistor, i.e., its resistance is with the liter of temperature
It is high and reduce, raised with the reduction of temperature, it is laid out in close MOSFET position, passes through what is formed with divider resistance R4
PCB temperature near electric bridge real-time sampling MOSFET, so as to indirectly reflect MOSFET shell temperature.
In addition, after negative tempperature coefficient thermistor is selected, temperature can be adjusted by changing divider resistance R4 resistance
The sensitivity of compensation is spent, when divider resistance R4 resistance is closer to the excursion of temperature sampling resistance R5 resistances, temperature is mended
The sensitivity for repaying circuit is higher.
And in the present invention, in order that curent change turns into principal element, temperature factor is only used as trickle compensation, therefore
The sensitivity of temperature-compensation circuit should keep low-level, i.e., the prevention amplitude of variation of described temperature sampling resistance does not result in described
There is change by a relatively large margin in reference voltage, corresponding, designs the resistance of the divider resistance R4 away from temperature sampling electricity
Hinder R5 change in resistance scope so that the second comparison voltage V2 calculated according to equation below amplitude of variation be no more than setting value,
V2=VCC×R5/（R4+R5）
Wherein, VCC is power end VCC input voltages.
During specific works, its principle is close with embodiment, and difference is：The reference voltage is by the temperature-compensation circuit
Gather and export in real time and produce comparison signal to each comparator,
In the case where temperature is constant, the voltage of the temperature-compensation circuit generation is constant, its operation principle and the phase of embodiment one
Together.
In the case where electric current is constant, when MOSFET environment temperature rise, the negative tempperature coefficient thermistor
Resistance diminishes, corresponding, the reference voltage reduction, and because electric current is constant, each comparator output voltage keeps constant, when
When the corresponding voltage signal of any one branch current exceedes the reference voltage that temperature-compensation circuit is generated, the logic or compare
Circuit 4 is output as low level, so that the buffer U2 in correspondence drive circuit is closed, so as to turn off MOSFET gate electrode drive signals
Output.The present invention still has a numerous embodiments, all technical schemes formed by all use equivalents or equivalent transformation,
It is within the scope of the present invention.
Claims (10)
1. with the MOSFET parallel driver circuits for flowing protection, including at least one is by one group of MOSFET parallel connections in parallel formed
Circuit（1）And the drive circuit of MOSFET work described in one group of driving（2）, it is characterised in that：Also include and each parallel circuit
（1）The voltage collection circuit of matching（3）With logic or comparison circuit（4）, each voltage collection circuit（3）For gathering
State parallel circuit（1）In the corresponding voltage signals of each MOSFET, and be conveyed to corresponding logic or comparison circuit（4）, when
The logic or comparison circuit（4）When judging one in the N number of voltage signal reference voltage for exceeding its reception, the logic or
Comparison circuit（4）Export low level and disconnect corresponding drive circuit（1）Drive signal output.
2. according to claim 1 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The parallel connection
Circuit（1）For 2 and they respectively with a drive circuit（2）, voltage collection circuit（3）And logic or comparison circuit（4）Even
Connect and be collectively forming bridge loop and lower bridge loop, the upper bridge loop and lower bridge loop are used for the three-phase drive electricity of alternating current generator
An at least phase in road；
The drain electrode of each MOSFET in the upper bridge loop connects DC power anode by the voltage collection circuit（DC+）,
The grid of each MOSFET in the upper bridge loop is connected in upper bridge drive circuit, the upper bridge loop by a resistance respectively
Each MOSFET source electrode connect the U phase output terminals or V phase output terminals or W phase output terminals of alternating current generator；
The U phase output terminals or V phase output terminals or W phases that the drain electrode of each MOSFET in the lower bridge loop connects alternating current generator are exported
The grid of each MOSFET in end, the lower bridge loop connects lower bridge drive circuit by a resistance respectively, and the lower bridge is returned
The source electrode of each MOSFET in road connects DC power cathode by voltage collection circuit（DC-）.
3. according to claim 2 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The voltage
Acquisition Circuit（3）Including N number of sampling resistor（RS1, RS2 ... RSN）, one end of each sampling resistor in the upper bridge loop
Connect MOSFET drain electrode and the logic or comparison circuit（4）, another termination DC power anode of each sampling resistor
（DC+）；
One one MOSFET of termination of each sampling resistor in lower bridge loop source electrode and the logic or comparison circuit
（4）, another termination DC power cathode of each sampling resistor（DC-）.
4. according to claim 3 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The sampling
Resistance（RS1, RS2 ... RSN）For the metalfilmresistor of high-power low value.
5. according to claim 3 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The sampling
Resistance（RS1, RS2 ... RSN）Resistance R meet equation below：
R=（V×N）/（IAlways×n）
Wherein, V is the maximum drain current I that single MOSFET is allowed to flow throughDMAXThe voltage or reference electricity produced on sampling resistor
Pressure, N is paralleling MOS FET quantity, IAlwaysFor total maximum output current, n is pre- allowance, and value is X% × IAlways, the negated negatives of X.
6. according to claim 5 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The X takes
Value is between 10-20.
7. according to claim 2 have the MOSFET parallel driver circuits for flowing protection, it is characterised in that：The logic
Or comparison circuit（4）Including N number of comparator in parallel（U1,U2,…UN）, the reverse input end reception one of each comparator
The corresponding voltage signals of MOSFET, the positive input of each comparator connects same reference voltage end（VREF）, each ratio
Output end compared with device is all connected with the drive circuit（1）In buffer（U2）.
8. MOSFET according to claim 7 current foldback circuits in parallel, it is characterised in that：The reference voltage is by temperature
Compensation circuit（4）Generation, the temperature-compensation circuit（4）Divider resistance including concatenation（R4）And temperature sampling resistance（R5）,
The divider resistance（R4）One termination power end, the temperature sampling resistance（R5）One end ground connection, their connection end be total to
It is same to be connected to each comparator（U1）Positive input.
9. MOSFET according to claim 8 current foldback circuits in parallel, it is characterised in that：The temperature sampling resistance
（R5）It is disposed proximate to for negative tempperature coefficient thermistor and with MOSEFT.
10. the MOSFET parallel driver circuits that having according to claim 1-9 is any flows protection, it is characterised in that：
The driving electricity that there is the MOSFET parallel driver circuits for flowing protection at least applied to low-voltage high-power electric machine controller
Lu Zhong.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710260601.XA CN106972737B (en) | 2017-04-20 | 2017-04-20 | MOSFET parallel driving circuit with current sharing protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710260601.XA CN106972737B (en) | 2017-04-20 | 2017-04-20 | MOSFET parallel driving circuit with current sharing protection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106972737A true CN106972737A (en) | 2017-07-21 |
| CN106972737B CN106972737B (en) | 2023-06-23 |
Family
ID=59332572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710260601.XA Active CN106972737B (en) | 2017-04-20 | 2017-04-20 | MOSFET parallel driving circuit with current sharing protection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106972737B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109149521A (en) * | 2018-08-09 | 2019-01-04 | 珠海格力电器股份有限公司 | Overvoltage protection device, motor and overvoltage protection method thereof |
| CN110322855A (en) * | 2019-07-11 | 2019-10-11 | 深圳市华星光电技术有限公司 | GOA driving circuit and display device |
| CN111628636A (en) * | 2019-02-28 | 2020-09-04 | 中车株洲电力机车研究所有限公司 | Driving device suitable for parallel connection of IGBTs in converter |
| CN113098250A (en) * | 2021-06-09 | 2021-07-09 | 深圳市赛迈科技有限公司 | Power supply circuit and vehicle-mounted power supply |
| CN113141106A (en) * | 2021-05-20 | 2021-07-20 | 安徽智纳智能装备有限公司 | Protection type MOS manages drive circuit that connects in parallel |
| EP3767312A4 (en) * | 2018-12-04 | 2021-08-04 | Contemporary Amperex Technology Co., Limited | Current sampling method and current sampling circuit |
| CN114035020A (en) * | 2021-09-29 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Back board circuit detection device and method |
| CN114362487A (en) * | 2021-11-26 | 2022-04-15 | 西安电子科技大学 | Active current-sharing driving control circuit of parallel power device |
| CN114879802A (en) * | 2022-06-23 | 2022-08-09 | 广东美的白色家电技术创新中心有限公司 | Current regulating device, method, device, equipment and medium |
| CN114967815A (en) * | 2022-06-23 | 2022-08-30 | 广东美的白色家电技术创新中心有限公司 | Voltage regulation device, method, device, equipment and medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202094613U (en) * | 2011-06-02 | 2011-12-28 | 深圳市汇川技术股份有限公司 | IGBT current foldback circuit |
| CN102447401A (en) * | 2011-12-31 | 2012-05-09 | 南京理工大学 | Power inverter |
| CN202351400U (en) * | 2011-11-30 | 2012-07-25 | 厦门宏发电力电器有限公司 | Short-circuit test device based on IGBT (Insulated Gate Bipolar Translator) switch |
| CN206894490U (en) * | 2017-04-20 | 2018-01-16 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
-
2017
- 2017-04-20 CN CN201710260601.XA patent/CN106972737B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202094613U (en) * | 2011-06-02 | 2011-12-28 | 深圳市汇川技术股份有限公司 | IGBT current foldback circuit |
| CN202351400U (en) * | 2011-11-30 | 2012-07-25 | 厦门宏发电力电器有限公司 | Short-circuit test device based on IGBT (Insulated Gate Bipolar Translator) switch |
| CN102447401A (en) * | 2011-12-31 | 2012-05-09 | 南京理工大学 | Power inverter |
| CN206894490U (en) * | 2017-04-20 | 2018-01-16 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
Non-Patent Citations (1)
| Title |
|---|
| 陈毓辉: "功率MOS管并联方法的研究", 《自动化技术与应用》 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109149521A (en) * | 2018-08-09 | 2019-01-04 | 珠海格力电器股份有限公司 | Overvoltage protection device, motor and overvoltage protection method thereof |
| US11287454B2 (en) | 2018-12-04 | 2022-03-29 | Contemporary Amperex Technology Co., Limited | Current sampling method and current sampling circuit |
| EP3767312A4 (en) * | 2018-12-04 | 2021-08-04 | Contemporary Amperex Technology Co., Limited | Current sampling method and current sampling circuit |
| CN111628636A (en) * | 2019-02-28 | 2020-09-04 | 中车株洲电力机车研究所有限公司 | Driving device suitable for parallel connection of IGBTs in converter |
| CN111628636B (en) * | 2019-02-28 | 2021-08-24 | 中车株洲电力机车研究所有限公司 | Driving device suitable for parallel connection of IGBTs in converter |
| CN110322855A (en) * | 2019-07-11 | 2019-10-11 | 深圳市华星光电技术有限公司 | GOA driving circuit and display device |
| CN113141106A (en) * | 2021-05-20 | 2021-07-20 | 安徽智纳智能装备有限公司 | Protection type MOS manages drive circuit that connects in parallel |
| CN113098250A (en) * | 2021-06-09 | 2021-07-09 | 深圳市赛迈科技有限公司 | Power supply circuit and vehicle-mounted power supply |
| CN114035020A (en) * | 2021-09-29 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Back board circuit detection device and method |
| CN114362487A (en) * | 2021-11-26 | 2022-04-15 | 西安电子科技大学 | Active current-sharing driving control circuit of parallel power device |
| CN114362487B (en) * | 2021-11-26 | 2024-03-19 | 西安电子科技大学 | Active current-sharing driving control circuit of parallel power device |
| CN114879802A (en) * | 2022-06-23 | 2022-08-09 | 广东美的白色家电技术创新中心有限公司 | Current regulating device, method, device, equipment and medium |
| CN114967815A (en) * | 2022-06-23 | 2022-08-30 | 广东美的白色家电技术创新中心有限公司 | Voltage regulation device, method, device, equipment and medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106972737B (en) | 2023-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106972737A (en) | With the MOSFET parallel driver circuits for flowing protection | |
| CN106688183A (en) | Short-circuit protection circuit for self-arc-extinguishing semiconductor element | |
| CN106711969A (en) | Pilot protection method for double ultrahigh voltage direct current transmission line based on modulus saltation | |
| EP3637573B1 (en) | Power control system and control device | |
| US20140268942A1 (en) | Interface arrangement between ac and dc systems for reliable opening of the circuit breaker in time | |
| CN112234839B (en) | Hybrid distribution transformer and power-on soft start method thereof | |
| CN105449704A (en) | Flexible direct-current power transmission system and direct-current fault processing method thereof | |
| CN206894490U (en) | With the MOSFET parallel driver circuits for flowing protection | |
| CN106105007B (en) | More level power converters and method for controlling more level power converters | |
| CN103887767A (en) | Device for protection against an electrical overcurrent of at least one electronic switching branch, conversion system comprising such a protection device, and related control method | |
| CN109194245A (en) | A kind of servo-driver and its detection method with input phase failure detection function | |
| CN110780154B (en) | Device and method for improving ground fault identification through fault duration transient characteristics | |
| CN107210703B (en) | Driving device, matrix converter and elevator device | |
| US20100007211A1 (en) | Control device and control method for power conversion system having instantaneous voltage drop - service interruption counter-measure functions | |
| EP3758205B1 (en) | Method for operating converter and converter arrangement | |
| CN110212556B (en) | Automatic switching device and method for three-phase unbalance and reactive power management | |
| JPH09191662A (en) | Protecting method for semiconductor device | |
| CN103475191A (en) | Control circuit of switching power supply | |
| CN108123419B (en) | A kind of overcurrent protection method, device, chip and control circuit | |
| CN102035388A (en) | Switching power supply | |
| CN101855806B (en) | Device for regulating a high-voltage direct-current transmission system | |
| US11101640B1 (en) | Solid-state protection for direct current networks | |
| CN106953624A (en) | MOSFET parallel connection current foldback circuits | |
| CN104184164B (en) | A kind of anti-grid disturbance method of grid-connected pwm converter | |
| KR20230098137A (en) | Systems and methods for soft-switching current source converter control |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |