CN114362487A - Active current-sharing driving control circuit of parallel power device - Google Patents
Active current-sharing driving control circuit of parallel power device Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses an active current-sharing driving control circuit of a parallel power device, which comprises: the current unbalance sensing module is used for sensing the current difference value of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment and sending the current difference value to the current balance controller; the current balance controller is used for generating a correction signal according to the current difference value and sending the correction signal to the grid signal control circuit; and the grid signal control circuit is used for generating a control signal according to the PWM control signal and the correction signal so as to enable the control signal to control the delay of the grid driving signals of the SiC MOSFET1 and the SiC MOSFET2 through the grid driving circuit, thereby realizing active current sharing. The control circuit changes the grid signals of the two parallel devices by detecting the current imbalance of the parallel devices and adjusts the turn-on time of each chip in closed-loop control, so that the current imbalance phenomenon can be effectively eliminated.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an active current-sharing driving control circuit of a parallel power device.
Background
The SiC MOSFET device can greatly improve the power density and efficiency of the power converter, but the single tube of the existing SiC MOSFET has lower rated capacity, and a large-current switching device is required in many applications, so that the high-power requirement which cannot be realized by a single power device is often met by parallel connection devices. However, due to the factors of mismatching of gate driving loops, parasitic inductance of main loops, device parameters and the like in the parallel branches, current imbalance often exists between the parallel devices. The electrical parameters of the external circuit or the parameters of the chips are inconsistent, so that the chips are easy to generate non-uniform current in the switching process, and particularly in the switching transient process, if a certain device in the parallel branch is turned on in advance, all load current needs to be borne. Current imbalance may further cause power loss distribution to be uneven, in which case, the threshold voltage is lowered due to temperature rise, so that the on time of the chip is advanced, the current mismatch phenomenon is more serious, and device damage may be caused.
Therefore, it is necessary to improve the phenomenon of transient current imbalance between the parallel devices, and avoid the failure of other chips due to the over-high thermal stress of a single chip, so that the whole system is damaged. Because the SiC MOSFET is of a positive temperature coefficient, the current in the conducting stage can be automatically optimized and equalized, and the main problem is that the transient current is unbalanced. In order to solve the current sharing problem of the parallel devices, the parallel devices are operated in a derating mode in the related technology, however, the design mode can only solve the steady-state current sharing problem of the parallel chips, and the derating operation wastes power capacity. In addition, there is a method of screening parallel devices and making the electrical parameters of the devices as consistent as possible after screening. However, the transient current imbalance is caused by the combined action of multiple factors, for example, the external load current change also causes the non-uniform current phenomenon, and it is difficult to realize the current sharing simply by screening and calibrating the static parameters of the device.
Therefore, how to provide an active current sharing control circuit for parallel devices becomes a key technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides an active current-sharing driving control circuit for parallel power devices. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides an active current-sharing driving control circuit of a parallel power device, which comprises: a current imbalance sensing module, a current balance controller, a gate signal control circuit, a gate drive circuit, a SiC MOSFET1, and a SiC MOSFET2 connected in parallel with SiC MOSFET 1; wherein the content of the first and second substances,
the current unbalance sensing module is used for sensing a current difference value of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment and sending the current difference value to the current balance controller;
the current balance controller is used for generating a correction signal according to the current difference value and sending the correction signal to the grid signal control circuit;
the gate signal control circuit is used for generating a control signal according to the PWM control signal and the correction signal, so that the control signal controls the delay of the gate driving signals of the SiC MOSFET1 and the SiC MOSFET2 through the gate driving circuit, and active current sharing is achieved.
In one embodiment of the invention, the current imbalance sensing module comprises a first current measurement cell in series with SiC MOSFET1, a second current measurement cell in series with SiC MOSFET2, and a sensing cell comprising a first input and a second input, an output of the first current measurement cell being connected with the first input, an output of the second current measurement cell being connected with the second input; wherein the content of the first and second substances,
the first current measuring unit is used for converting a current signal of the SiC MOSFET1 into a first voltage signal and sending the first voltage signal to the sensing unit;
the second current measuring unit is used for converting a current signal of the SiC MOSFET2 into a second voltage signal and sending the second voltage signal to the sensing unit;
the sensing unit is used for receiving the first voltage signal and the second voltage signal and sensing the current difference of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment according to the first voltage signal and the second voltage signal.
In one embodiment of the present invention, the sensing unit is specifically configured to calculate a difference between the first voltage signal and the second voltage signal after receiving the first voltage signal and the second voltage signal, and determine a current difference between the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment according to the difference.
In one embodiment of the present invention, the sensing unit includes a resistance: r1、R2、R3And R4And a first operational amplifier; wherein the content of the first and second substances,
a first input terminal of the first operational amplifier is connected via R1A second input terminal of the first operational amplifier is connected to the output terminal of the first current measuring unit via R2An output terminal connected to the second current measuring unit, R1And a first input terminal of the first operational amplifier, R3Is connected with the first node, and the other end is connected with the output end of the first operational amplifier, R2And a second input end of the first operational amplifier, and a second node is included between the first input end and the second input end of the first operational amplifier, and the second node is connected with the second input end of the first operational amplifier through R4And (4) grounding.
In one embodiment of the invention, the current balance controller comprises a resistor: r5、R6And R7Capacitor C1And a second operational amplifier; wherein the content of the first and second substances,
the first input end of the second operational amplifier passes through R5An output terminal connected to the sensing unit, R5And a third node, R6One end of (A) andthe third node is connected, and the other end of the third node is connected with the other end of the third node through a C1Connected to the output of the second operational amplifier, the second input of which passes through R7And (4) grounding.
In one embodiment of the present invention, the first current measuring unit includes: at least one of a sampling resistor, a hall current sensor, and a rogowski coil.
In an embodiment of the present invention, the gate signal control circuit further includes a first reference voltage signal terminal, a second reference voltage signal terminal, and a pulse signal control terminal, and the gate signal control circuit includes a MOSFET, a first comparator, a second comparator, a first schmitt trigger, a second schmitt trigger, a capacitor: c2And C3Resistance: r8、R9、R10、R11And R12And a diode: d1、D2、D3And D4(ii) a Wherein the content of the first and second substances,
the output end of the first comparator is connected with the input end of the first Schmitt trigger, the first input end is connected with the first reference voltage signal end, the second input end is connected with the source electrode of the MOSFET, and the drain electrode of the MOSFET is connected with D1Cathode connection of D1Is connected to the pulse signal control terminal, R8Connected in parallel between the source and the drain of the MOSFET, and including a fourth node, D, between the source of the MOSFET and the second input terminal of the first comparator2And D1Anode connection of D2Anode is passed through R9Is connected to the fourth node, C2One end of the second node is connected with the fourth node, and the other end of the second node is grounded; gate of MOSFET via R10An output connected to the current balance controller; c3One end of the first electrode is connected with the grid electrode of the MOSFET, and the other end of the first electrode is grounded;
the output end of the second comparator is connected with the input end of the second Schmitt trigger, the first input end is connected with the second reference voltage signal end, and the second input end is connected with the R11Is connected at one end, R11Another end of (D) and3cathode connection of D3The anode of the power supply is connected to the pulse signal control end; r11And a fifth node, D, between the second input of the second comparator4And D3Anode connection of D4Anode is passed through R12Is connected to the fifth node, C3Is connected to the fifth node, and the other end is grounded.
In one embodiment of the invention, the gate drive circuit comprises a first gate drive circuit for controlling the gate drive signal delay of the SiC MOSFET1 with the control signal and a second gate drive circuit for controlling the gate drive signal delay of the SiC MOSFET2 with the control signal
Compared with the prior art, the invention has the beneficial effects that:
the invention provides an active current-sharing driving control circuit of a parallel power device, which comprises: the current unbalance sensing module is used for sensing the current difference value of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment and sending the current difference value to the current balance controller; the current balance controller is used for generating a correction signal according to the current difference value and sending the correction signal to the grid signal control circuit; and the grid signal control circuit is used for generating a control signal according to the PWM control signal and the correction signal so as to enable the control signal to control the delay of the grid driving signals of the SiC MOSFET1 and the SiC MOSFET2 through the grid driving circuit, thereby realizing active current sharing. The control circuit changes the grid signals of the SiC MOSFET1 and the SiC MOSFET2 and adjusts the turn-on time of each chip in closed-loop control by detecting the current imbalance of the SiC MOSFET1 and the SiC MOSFET2 of the parallel device, so that the current imbalance phenomenon can be effectively eliminated no matter whether the external circuit parameters are consistent or whether the parameters of the parallel device are changed.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of an active current-sharing driving control circuit of a parallel power device according to an embodiment of the present invention;
FIG. 2 is an equivalent circuit diagram of a sensing unit according to an embodiment of the present invention;
FIG. 3 is an equivalent circuit diagram of a current balance controller according to an embodiment of the present invention;
FIG. 4 is a timing diagram of the on-current slope detection circuit according to an embodiment of the present invention;
fig. 5 is an equivalent circuit diagram of a gate driving control circuit according to an embodiment of the present invention;
fig. 6 is a timing diagram of the on-current slope detection circuit according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Fig. 1 is a schematic structural diagram of an active current-sharing driving control circuit of a parallel power device according to an embodiment of the present invention. As shown in fig. 1, an embodiment of the present invention provides an active current-sharing driving control circuit 1 for parallel power devices, including: current imbalance sensing module 10, current balance controller 20, gate signal control circuit 30, gate drive circuit, SiC MOSFET1, and SiC MOSFET2 in parallel with SiC MOSFET 1; wherein the content of the first and second substances,
the current imbalance sensing module 10 is configured to sense a current difference value of the SiC MOSFET1 and the SiC MOSFET2 at a turn-on moment, and send the current difference value to the current balance controller 20;
a current balance controller 20 for generating a correction signal according to the current difference value and transmitting the correction signal to the gate signal control circuit 30;
and the gate signal control circuit 30 is configured to generate a control signal according to the PWM control signal and the correction signal, so that the control signal controls the gate driving signals of the SiC MOSFET1 and the SiC MOSFET2 to delay through the gate driving circuit 40, thereby realizing active current sharing.
Specifically, the active current-sharing driving control circuit 1 of the parallel power device provided in this embodiment includes: a current imbalance module, a current balance controller 20, a gate signal control circuit 30, a gate drive circuit 40, and parallel devices SiC MOSFET1 and SiC MOSFET 2; in the process of implementing active current sharing, the current imbalance sensing module 10 first senses a current difference value between the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment, and sends the current difference value to the current balance controller 20, the current balance controller 20 may generate a correction signal according to the current difference value, and then after the current balance controller 20 sends the correction signal to the gate signal control circuit 30, the gate signal control circuit 30 generates a control signal according to the PWM control signal and the correction signal, so that the control signal controls the gate drive signals of the SiC MOSFET1 and the SiC MOSFET2 to delay through the gate drive circuit 40, implement active current sharing, and solve the problem of current imbalance of the parallel devices. In addition, the embodiment also improves the utilization degree of the power device, the single chip does not need to be operated in a derating way, the failure probability of the chip is reduced, and the service life of the chip is prolonged.
With reference to fig. 1, the current imbalance sensing module 10 includes a first current measuring unit, a second current measuring unit and a sensing unit, wherein the first current measuring unit is connected in series with the SiC MOSFET1, the second current measuring unit is connected in series with the SiC MOSFET2, the sensing unit includes a first input terminal and a second input terminal, an output terminal of the first current measuring unit is connected to the first input terminal, and an output terminal of the second current measuring unit is connected to the second input terminal; wherein the content of the first and second substances,
a first current measuring unit for converting a current signal of the SiC MOSFET1 into a first voltage signal and transmitting the first voltage signal to the sensing unit;
a second current measuring unit for converting the current signal of the SiC MOSFET2 into a second voltage signal and transmitting the second voltage signal to the sensing unit;
and the sensing unit is used for receiving the first voltage signal and the second voltage signal and sensing the current difference of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment according to the first voltage signal and the second voltage signal.
In this embodiment, the current imbalance sensing module 10 includes a first current measuring unit, a second current measuring unit and a sensing unit, wherein the first current measuring unit and the second current measuring unit need to perform accurate, high bandwidth and low cost current measurement, and the sensing unit further determines an imbalance current difference value in the parallel device by using the measurement results of the first current measuring unit and the second current measuring unit.
Specifically, a first current measuring unit is connected in series with the SiC MOSFET1 for converting the current signal of the SiC MOSFET1 into a first voltage signal, and a second current measuring unit is connected in series with the SiC MOSFET2 for converting the current signal of the SiC MOSFET2 into a second voltage signal. Alternatively, the first/second current measuring unit may include at least one of a sampling resistor, a hall current sensor, and a rogowski coil. Of course, in other embodiments of the present invention, the current signal may be converted into the voltage signal in other manners, which is not limited in this application.
Further, the sensing unit receives the first voltage signal and the second voltage signal, calculates a difference between the first voltage signal and the second voltage signal, and determines a current difference between the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment according to the difference. Fig. 2 is an equivalent circuit diagram of a sensing unit according to an embodiment of the present invention. As shown in fig. 2, the sensing unit includes a resistance: r1、R2、R3And R4And a first operational amplifier; wherein the content of the first and second substances,
the first input terminal of the first operational amplifier is connected via R1Connected to the output of the first current measuring unit, and the second input of the first operational amplifier is connected via R2Connected to the output of the second current-measuring unit, R1A first node N is included between the first operational amplifier and the first input end of the first operational amplifier1，R3And a first node N1Connected at the other end to the output of the first operational amplifier, R2A second node N is included between the first operational amplifier and the second input end of the first operational amplifier2Second node N2Warp R4And (4) grounding.
It can be understood that, in this embodiment, the sensing unit includes a differential amplifying circuit, two inputs of the sensing unit are the first voltage signal output by the first current measuring unit and the second voltage signal output by the second current measuring unit, respectively, when there is a difference between the voltage signals input by the two input terminals of the sensing unit,output voltage VoutA change occurs, which indicates that the current between the parallel devices SiC MOSFET1 and SiC MOSFET2 is unbalanced; on the contrary, when the currents flowing through the two parallel devices are the same, the output voltage does not change, wherein the output voltage VoutIs determined by the current imbalance.
Fig. 3 is an equivalent circuit diagram of a current balance controller according to an embodiment of the present invention. Referring to fig. 3, the current balance controller 20 includes resistors: r5、R6And R7Capacitor C1And a second operational amplifier; wherein the content of the first and second substances,
the first input terminal of the second operational amplifier is connected via R5An output terminal connected to the sensing unit, R5A third node N is included between the first input end and the second input end3，R6And a third node N3Connected with the other end through C1Connected to the output of a second operational amplifier having a second input terminal connected via R7And (4) grounding.
Specifically, the current balance controller 20 provided in this embodiment adopts a proportional-integral control circuit, which is implemented by an operational amplifier, a capacitor and three resistors, and connects the current difference value of the SiC MOSFET1 and the SiC MOSFET2 measured by the sensing unit at the turn-on instant to the input terminal V of the current balance controller 20inSo that the second operational amplifier realizes feedback control during the SiC MOSFET transient.
Fig. 4 is a timing diagram of the on-current slope detection circuit according to an embodiment of the present invention. It will be appreciated that the present invention eliminates dynamic current imbalance by appropriately controlling the delay of the gate signal, which will carry more current in the on transient if the threshold voltage of one of the parallel devices is lower, and similarly, when the device is off, the lower threshold voltage device is also turned off more slowly and will carry more current in the off transient. Illustratively, referring to FIG. 4, taking the example that the threshold voltage of SiC MOSFET1 is lower than the threshold voltage of SiC MOSFET2, Id1Represents the drain current (shown as a dashed line in FIG. 4), I, of SiC MOSFET1d2Showing SiC MOSFET2Drain current (shown as solid line in fig. 4), Vds1Showing the drain-source voltage, V, of the SiC MOSFET1ds2Indicating the drain-source voltage of SiC MOSFET2, the miller platform voltage of SiC MOSFET1 is lower and SiC MOSFET1 carries more current in the on transient, since the threshold voltage of SiC MOSFET1 is lower than the threshold voltage of SiC MOSFET 2. Furthermore, since the current slope of SiC MOSFET1 is greater at the turn-on transient, an induced voltage drop is created across the main loop parasitic inductance, and therefore Vds1There is a more pronounced voltage drop. When the device is in an on transient state, the sensing unit generates a feedback voltage to enable the grid driving signal to slightly deviate so as to compensate the current imbalance in the parallel devices, further, the influence caused by the inconsistency of the threshold voltages is eliminated in the next on transient state, the currents of the two parallel devices are balanced, when the currents of the two parallel devices are balanced, the sensing unit does not generate the feedback signal any more, and the driving control circuit 1 stops working.
Fig. 5 is an equivalent circuit diagram of a gate driving control circuit according to an embodiment of the present invention. Optionally, referring to fig. 5, the driving control circuit 1 further includes a first reference voltage signal terminal Vref1, a second reference voltage signal terminal Vref2, and a pulse signal control terminal, and the gate signal control circuit 30 includes a MOSFET, a first comparator 301, a second comparator 302, a first schmitt trigger 303, a second schmitt trigger 304, and a capacitor: c2And C3Resistance: r8、R9、R10、R11And R12And a diode: d1、D2、D3And D4(ii) a Wherein the content of the first and second substances,
the output terminal of the first comparator 301 is connected to the input terminal of the first schmitt trigger 303, the first input terminal is connected to the first reference voltage signal terminal Vref1, the second input terminal is connected to the source of the MOSFET, the drain of the MOSFET is connected to D1Cathode connection of D1Is connected with the pulse signal control terminal, R8Connected in parallel between the source and the drain of the MOSFET, and including a fourth node N between the source of the MOSFET and the second input terminal of the first comparator 3014，D2And D1Anode connection of D2Anode is passed through R9Is connected to a fourth node N4，C2And a fourth node N4Connecting, and grounding the other end; gate of MOSFET via R10An output terminal connected to the current balance controller; c3One end of the first electrode is connected with the grid electrode of the MOSFET, and the other end of the first electrode is grounded;
the output terminal of the second comparator 302 is connected to the input terminal of the second schmitt trigger 304, the first input terminal is connected to the second reference voltage signal terminal Vref2, the second input terminal is connected to R11Is connected at one end, R11Another end of (D) and3cathode connection of D3The anode of the power amplifier is connected to the pulse signal control end; r11And a second input terminal of the second comparator 302 includes a fifth node N5，D4And D3Anode connection of D4Anode is passed through R12Is connected to a fifth node N5，C3And a fifth node N5Connected and the other end is grounded.
Specifically, as shown in fig. 5, the driving control circuit 1 mainly includes two RC delay networks, the input PWM signal passes through two RC delay networks, the first delay network includes R8、D1、R9、D2、C2And SiC MOSFET1, the second delay network including R11、D3、R12、D4、C3And (4) forming. In the rising stage of PWM signal, the first delay network passes through R8、D1And MOSFET pair C2The capacitor is charged, and the second delay network passes through R11、D3To C3The capacitor is charged. Alternatively, R8Greater than R11、D1Is equal to D3、R9Is equal to R12、D2Is equal to D4，C2And C3In this case, the rising time of the first gate output signal and the second gate output signal is determined by the resistance of the MOSFET1, and the falling time of the two gate output signals is the same. The MOSFET1 can be in saturation operation or variable resistance operation with its on-resistance controlled by the correction signal VcontrolAnd (5) controlling. Thus, by correcting the signal VcontrolCan control the capacitance C2The charging current of the first grid electrode output signal is controlled relative to the delay time of the second grid electrode output signal, so that the first grid electrode output signal appears before the second grid electrode output signal for a certain time or the first grid electrode output signal appears after the second grid electrode output signal for a certain time.
Further, the first comparator 301 and the second comparator 302 can adjust the variation range of the two output gate signals, thereby changing the feedback control signal VcontrolFor the control range of the delay time of the PWM signal, the first comparator 301 and the second comparator 302 are respectively connected to the first schmitt trigger 303 and the second schmitt trigger 304 after being output, and different threshold voltages are provided in two different changing directions of negative decrement and positive increment of the input voltage, so that the loop has stronger interference resistance.
After that, the two driving signals are respectively connected with a current amplifier realized by a transistor type push-pull circuit to drive the power device. The negative feedback loop can be formed by combining the current measuring unit, the current imbalance sensing unit, the current balance controller and the grid signal regulating and controlling circuit, the grid signal delay is adjusted, the output of the current imbalance sensing unit is enabled to be zero, and therefore the phenomenon of unbalanced current of the parallel devices in switching-on is eliminated. Fig. 6 shows two control signals generated by the gate signal regulating circuit and the final current equalizing effect.
Optionally, the gate drive circuit 40 includes a first gate drive circuit for controlling the gate drive signal delay of the SiC MOSFET1 with a control signal and a second gate drive circuit for controlling the gate drive signal delay of the SiC MOSFET2 with a control signal.
The beneficial effects of the invention are that:
the embodiment of the invention provides an active current-sharing driving control circuit of a parallel power device, which comprises: the current unbalance sensing module is used for sensing the current difference value of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment and sending the current difference value to the current balance controller; the current balance controller is used for generating a correction signal according to the current difference value and sending the correction signal to the grid signal control circuit; and the grid signal control circuit is used for generating a control signal according to the PWM control signal and the correction signal so as to enable the control signal to control the delay of the grid driving signals of the SiC MOSFET1 and the SiC MOSFET2 through the grid driving circuit, thereby realizing active current sharing. The control circuit changes the grid signals of the SiC MOSFET1 and the SiC MOSFET2 and adjusts the turn-on time of each chip in closed-loop control by detecting the current imbalance of the SiC MOSFET1 and the SiC MOSFET2 of the parallel device, so that the current imbalance phenomenon can be effectively eliminated no matter whether the external circuit parameters are consistent or whether the parameters of the parallel device are changed.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (8)
1. An active current-sharing driving control circuit of a parallel power device is characterized by comprising: a current imbalance sensing module, a current balance controller, a gate signal control circuit, a gate drive circuit, a SiC MOSFET1, and a SiC MOSFET2 connected in parallel with SiC MOSFET 1; wherein the content of the first and second substances,
the current unbalance sensing module is used for sensing a current difference value of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment and sending the current difference value to the current balance controller;
the current balance controller is used for generating a correction signal according to the current difference value and sending the correction signal to the grid signal control circuit;
the gate signal control circuit is used for generating a control signal according to the PWM control signal and the correction signal, so that the control signal controls the delay of the gate driving signals of the SiC MOSFET1 and the SiC MOSFET2 through the gate driving circuit, and active current sharing is achieved.
2. The parallel power device active current sharing drive control circuit of claim 1 wherein the current imbalance sensing module comprises a first current measurement cell in series with SiC MOSFET1, a second current measurement cell in series with SiC MOSFET2, and a sense cell comprising a first input and a second input, the output of the first current measurement cell being connected to the first input, the output of the second current measurement cell being connected to the second input; wherein the content of the first and second substances,
the first current measuring unit is used for converting a current signal of the SiC MOSFET1 into a first voltage signal and sending the first voltage signal to the sensing unit;
the second current measuring unit is used for converting a current signal of the SiC MOSFET2 into a second voltage signal and sending the second voltage signal to the sensing unit;
the sensing unit is used for receiving the first voltage signal and the second voltage signal and sensing the current difference of the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment according to the first voltage signal and the second voltage signal.
3. The active current-sharing driving control circuit of claim 2, wherein the sensing unit is specifically configured to calculate a difference between the first voltage signal and the second voltage signal after receiving the first voltage signal and the second voltage signal, and determine a current difference between the SiC MOSFET1 and the SiC MOSFET2 at the turn-on moment according to the difference.
4. The active current-sharing driving control circuit of claim 3, wherein the sensing unit comprises a resistor: r1、R2、R3And R4And a first operational amplifier; wherein the content of the first and second substances,
a first input terminal of the first operational amplifier is connected via R1A second input terminal of the first operational amplifier is connected to the output terminal of the first current measuring unit via R2An output terminal connected to the second current measuring unit, R1And a first input terminal of the first operational amplifier, R3Is connected with the first node, and the other end is connected with the output end of the first operational amplifier, R2And a second input end of the first operational amplifier, and a second node is included between the first input end and the second input end of the first operational amplifier, and the second node is connected with the second input end of the first operational amplifier through R4And (4) grounding.
5. The active current-sharing driving control circuit of claim 1, wherein the current balance controller comprises a resistor: r5、R6And R7Capacitor C1And a second operational amplifier; wherein the content of the first and second substances,
the first input end of the second operational amplifier passes through R5An output terminal connected to the sensing unit, R5And a third node, R6Is connected with the third node, and the other end passes through C1Connected to the output of the second operational amplifier, the second input of which passes through R7And (4) grounding.
6. The active current-sharing driving control circuit of parallel power devices according to claim 2, wherein the first current measuring unit comprises: at least one of a sampling resistor, a hall current sensor, and a rogowski coil.
7. The active current-sharing driving control circuit of claim 1, further comprising a first reference voltage signal terminal, a second reference voltage signal terminal and a pulse signal control terminal, wherein the gate signal control circuit comprises a MOSFET, a first comparator, a second comparator, a first schmitt trigger, a second schmitt trigger and a capacitor: c2And C3Resistance: r8、R9、R10、R11And R12And a diode: d1、D2、D3And D4(ii) a Wherein the content of the first and second substances,
the output end of the first comparator is connected with the input end of the first Schmitt trigger, the first input end is connected with the first reference voltage signal end, the second input end is connected with the source electrode of the MOSFET, and the drain electrode of the MOSFET is connected with D1Cathode connection of D1Is connected to the pulse signal control terminal, R8Connected in parallel between the source and the drain of the MOSFET, and including a fourth node, D, between the source of the MOSFET and the second input terminal of the first comparator2And D1Anode connection of D2Anode is passed through R9Is connected to the fourth node, C2One end of the second node is connected with the fourth node, and the other end of the second node is grounded; gate of MOSFET via R10An output connected to the current balance controller; c3One end of the first electrode is connected with the grid electrode of the MOSFET, and the other end of the first electrode is grounded;
the output end of the second comparator is connected with the input end of the second Schmitt trigger, the first input end is connected with the second reference voltage signal end, and the second input end is connected with the R11Is connected at one end, R11Another end of (D) and3cathode connection of D3The anode of the power supply is connected to the pulse signal control end; r11And a fifth node, D, between the second input of the second comparator4And D3Anode connection of D4Anode is passed through R12Is connected to the fifth node, C3Is connected to the fifth node, and the other end is grounded.
8. The parallel power device active current sharing drive control circuit of claim 1 wherein the gate drive circuit comprises a first gate drive circuit and a second gate drive circuit, wherein the first gate drive circuit is configured to control gate drive signal delay of the SiC MOSFET1 with the control signal, and the second gate drive circuit is configured to control gate drive signal delay of the SiC MOSFET2 with the control signal.
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