CN114967815A - Voltage regulation device, method, device, equipment and medium - Google Patents
Voltage regulation device, method, device, equipment and medium Download PDFInfo
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- CN114967815A CN114967815A CN202210726370.8A CN202210726370A CN114967815A CN 114967815 A CN114967815 A CN 114967815A CN 202210726370 A CN202210726370 A CN 202210726370A CN 114967815 A CN114967815 A CN 114967815A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The embodiment of the invention provides a voltage regulating device, a voltage regulating method, a voltage regulating device, electronic equipment and a computer storage medium, wherein the voltage regulating device comprises a first branch circuit and a reference voltage output circuit, the first branch circuit is formed by connecting a thermistor and a first resistor in series, and the voltage at two ends of the first branch circuit is the driving voltage of a transistor; the resistance value of the thermistor is in negative correlation with the junction temperature of the transistor, and the reference voltage output circuit is used for providing direct-current reference voltage to two ends of the thermistor.
Description
Technical Field
The present invention relates to voltage regulators, and more particularly, to a voltage regulator, a method and an apparatus thereof, an electronic device and a computer storage medium.
Background
In the related art, the loss of the transistor is generally reduced by adjusting the driving voltage of the transistor by sampling the load current, but the load current in an actual circuit cannot completely reflect the temperature condition of the transistor, for example, in a circuit with a plurality of transistors connected in parallel, the current of a single transistor is not necessarily positively correlated with the load current, and there may be conditions of unbalanced load, unbalanced three phases, unbalanced parallel devices, and the like, and even if the sampled load current is in a normal state, a certain transistor may be in overload operation, and the problem of excessive temperature rise and excessive loss occurs, so the driving voltage of the transistor cannot be accurately adjusted by sampling the load current. In summary, how to precisely adjust the driving voltage of the transistor is an urgent technical problem to be solved.
Disclosure of Invention
The embodiment of the invention provides a voltage regulating device, a voltage regulating method, a voltage regulating device, electronic equipment and a computer storage medium.
The embodiment of the invention provides a voltage regulating device, which comprises a first branch circuit and a reference voltage output circuit, wherein the first branch circuit is formed by connecting a thermistor and a first resistor in series, and the voltage at two ends of the first branch circuit is the driving voltage of a transistor; wherein the content of the first and second substances,
the resistance value of the thermistor is in negative correlation with the junction temperature of the transistor, and the reference voltage output circuit is used for providing direct current reference voltage to two ends of the thermistor.
In one implementation, the reference voltage output circuit includes a three-terminal regulator tube; wherein, the first and the second end of the pipe are connected with each other,
the input end of the three-terminal voltage-stabilizing tube is connected with the anode of the first power supply, the grounding end of the three-terminal voltage-stabilizing tube is grounded, the output end of the three-terminal voltage-stabilizing tube is connected with one end of the thermistor, and the other end of the thermistor is grounded.
It can be seen that the direct current reference voltage is provided to the two ends of the thermistor based on the three-end voltage regulator tube, so that the driving voltage of the transistor is only influenced by the resistance value of the thermistor, and the driving voltage of the transistor is favorably adjusted according to the relation between the resistance value of the thermistor and the junction temperature of the transistor.
In one implementation, the apparatus further includes a first voltage limiting circuit; wherein the content of the first and second substances,
the first voltage limiting circuit is connected with the first branch in parallel, and is used for limiting the voltage at two ends of the first branch so that the voltage at two ends of the first branch is smaller than or equal to the voltage limiting value of the first voltage limiting circuit.
It can be seen that the voltage across the first branch is limited by the first voltage limiting circuit so that the driving voltage of the transistor does not exceed its maximum operating voltage, thereby protecting the transistor from damage.
In one implementation, the apparatus further includes a second voltage limiting circuit; wherein the content of the first and second substances,
the second voltage limiting circuit is connected between the first power supply and the transistor and used for limiting the voltage at two ends of the first branch, so that the voltage at two ends of the first branch is greater than or equal to the voltage limiting value of the second voltage limiting circuit.
It can be seen that the voltage at the two ends of the first branch is limited by the second voltage limiting circuit, so that the driving voltage of the transistor is not lower than the rated working voltage of the transistor, the transistor can normally work, and the transistor cannot be conducted due to the fact that the driving voltage is too small.
The embodiment of the invention also provides a voltage regulation method, which is applied to a voltage regulation device, wherein the voltage regulation device is used for regulating the driving voltage of a transistor, and the method comprises the following steps:
acquiring a first temperature value of the transistor;
determining the driving voltage of the transistor as the rated working voltage of the transistor under the condition that the first temperature value is in a preset temperature range;
and controlling the driving voltage of the transistor to rise under the condition that the first temperature value is greater than a first threshold value, wherein the first threshold value is greater than or equal to the upper limit of the preset temperature range.
In the foregoing solution, the controlling the driving voltage of the transistor to increase includes:
controlling the driving voltage of the transistor to rise to a first voltage value, the first voltage value having a positive correlation with the first temperature value.
It can be seen that the driving voltage of the control transistor rises with the rise of the first temperature value, that is, the driving voltage of the transistor can be adjusted in real time according to the temperature change condition of the transistor, and the working state of the transistor can be directly and effectively controlled.
In the above scheme, the method further comprises:
and carrying out first voltage limiting processing on the driving voltage of the transistor to enable the driving voltage of the transistor to be smaller than or equal to the preset voltage limiting value.
It can be seen that the driving voltage of the transistor is less than or equal to the preset voltage limit value by performing the first voltage limit processing on the driving voltage of the transistor, so that the transistor can be protected from being damaged.
In the above scheme, before the controlling the driving voltage of the transistor to rise to the first voltage value, the method further includes: determining a first voltage value corresponding to the first temperature value;
the controlling the driving voltage of the transistor to rise to a first voltage value comprises:
and controlling the driving voltage of the transistor to be increased to a first voltage value under the condition that the first voltage value is less than or equal to a preset maximum voltage.
In the foregoing solution, the method further includes:
determining the driving voltage of the transistor as the preset maximum voltage in case that the first voltage value is greater than the preset maximum voltage.
It can be seen that the transistor can be controlled to work in the safe working range by judging whether the target value of the rise of the driving voltage of the transistor exceeds the safe working range of the transistor in advance, and the transistor is protected from being damaged.
In the foregoing scheme, after the controlling the driving voltage of the transistor to increase, the method further includes:
acquiring a second temperature value of the transistor;
controlling the driving voltage of the transistor to be reduced when the change trend of the second temperature value is a reduction trend;
and determining the driving voltage of the transistor as the rated working voltage under the condition that the second temperature value is within a preset temperature range.
Therefore, whether to control the reduction of the driving voltage of the transistor is judged according to the second temperature value of the transistor obtained again, that is, the driving voltage of the transistor can be determined according to the temperature change condition of the transistor, and the working condition of the transistor can be directly reflected.
The embodiment of the invention also provides a voltage regulating device, which at least comprises:
the acquisition module is used for acquiring a first temperature value of the transistor;
the control module is used for determining the driving voltage of the transistor as the rated working voltage of the transistor under the condition that the first temperature value is within a preset temperature range;
and controlling the driving voltage of the transistor to rise under the condition that the first temperature value is greater than a first threshold value, wherein the first threshold value is greater than or equal to the upper limit of the preset temperature range.
In one implementation, the control module is configured to control the driving voltage of the transistor to increase, and includes:
controlling the driving voltage of the transistor to rise to a first voltage value, the first voltage value having a positive correlation with the first temperature value.
In one implementation, the apparatus is further configured to: and carrying out first voltage limiting processing on the driving voltage of the transistor to enable the driving voltage of the transistor to be smaller than or equal to the preset voltage limiting value.
In one implementation, the control module is further configured to determine a first voltage value corresponding to the first temperature value before the driving voltage for controlling the transistor is increased to the first voltage value;
the control module is used for controlling the driving voltage of the transistor to rise to a first voltage value, and comprises:
and controlling the driving voltage of the transistor to be increased to a first voltage value under the condition that the first voltage value is less than or equal to a preset maximum voltage.
In one implementation, the apparatus is further configured to: determining the driving voltage of the transistor as the preset maximum voltage in case that the first voltage value is greater than the preset maximum voltage.
In one implementation, after controlling the driving voltage of the transistor to increase, the control module is further configured to:
acquiring a second temperature value of the transistor;
controlling the driving voltage of the transistor to be reduced when the change trend of the second temperature value is a reduction trend;
and determining the driving voltage of the transistor as the rated working voltage under the condition that the second temperature value is within a preset temperature range.
The embodiment of the invention also provides electronic equipment which comprises a memory, a processor and a computer program which is stored on the memory and can run on the processor, wherein when the processor executes the program, any one of the voltage regulation methods is realized.
Embodiments of the present invention further provide a computer storage medium having a computer program stored thereon, where the computer program is executed by a processor to implement any one of the voltage regulation methods described above.
Based on the voltage regulation device, the method and the device, the electronic equipment and the computer storage medium provided by the embodiment of the invention, the voltage regulation device comprises a first branch circuit and a reference voltage output circuit, wherein the first branch circuit is formed by connecting a thermistor and a first resistor in series, and the voltage at two ends of the first branch circuit is the driving voltage of a transistor; wherein the resistance value of the thermistor is inversely related to the junction temperature of the transistor, and the reference voltage output circuit is used for providing a direct current reference voltage to two ends of the thermistor.
It can be seen that, in the embodiment of the present invention, the voltage regulating device includes a first branch and a reference voltage output circuit, where the first branch is a branch formed by serially connecting a thermistor and a first resistor, a voltage across the first branch is a driving voltage of the transistor, the reference voltage output circuit is configured to provide a dc reference voltage to two ends of the thermistor, and a resistance value of the thermistor is inversely related to a junction temperature of the transistor, so that when the transistor operates at a higher temperature, a resistance value of the thermistor decreases, a voltage across two ends of the first branch increases, that is, a driving voltage of the transistor also increases, and an on-resistance of the transistor decreases with an increase of the driving voltage of the transistor, that is, an on-voltage drop of the transistor may be decreased by increasing the driving voltage of the transistor, so that an on-loss of the transistor may be decreased. It can be seen that, in the embodiment of the present invention, the driving voltage of the transistor is adjusted based on the relationship between the resistance value of the thermistor and the junction temperature of the transistor, so that the on-resistance of the transistor is adjusted, and the on-loss of the transistor is reduced.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
Fig. 1 is a schematic structural diagram of a voltage regulator according to an embodiment of the present invention;
FIG. 2 shows a thermistor R according to an embodiment of the present invention NTC The resistance value of (a) is plotted against temperature;
FIG. 3 is a circuit schematic of an implementation of a voltage regulation device according to an embodiment of the present invention;
fig. 4 is a schematic flowchart of a voltage regulation method according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of another voltage regulator according to an embodiment of the present invention;
fig. 6 is a schematic flowchart of a specific implementation of a voltage regulation method according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of another voltage regulation device according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
With the development of electronic technology, transistors are also widely used in power electronic circuit design, for example, Metal-Oxide-Semiconductor Field-Effect transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), silicon-based MOSFETs, and the like. However, the on-resistance of a transistor generally has a positive temperature coefficient, i.e., the higher the temperature, the larger the on-resistance, and therefore, when the transistor operates at a higher temperature, the on-resistance thereof also increases, thereby increasing the on-loss of the transistor. As is apparent from the output characteristics of the transistor, if the on-resistance of the transistor decreases as the driving voltage increases, the on-resistance can be decreased by increasing the driving voltage of the transistor, thereby reducing the on-loss of the transistor.
The technical scheme of the embodiment of the invention is provided for solving the problem that when the transistor works at a higher temperature, the conduction loss of the transistor is higher, but the conduction loss of the transistor cannot be reduced by accurately adjusting the driving voltage of the transistor. The embodiments of the present invention will be described in further detail below with reference to the drawings and embodiments. It should be understood that the examples provided herein are merely illustrative of the present invention and are not intended to limit the present invention. In addition, the following embodiments are provided as partial embodiments for implementing the present invention, not all embodiments for implementing the present invention, and the technical solutions described in the embodiments of the present invention may be implemented in any combination without conflict.
It should be noted that, in the embodiments of the present invention, the terms "comprises", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion, so that a method or apparatus including a series of elements includes not only the explicitly recited elements but also other elements not explicitly listed or inherent to the method or apparatus. Without further limitation, the use of the phrase "including a. -. said." does not exclude the presence of other elements (e.g., steps in a method or elements in a device, such as portions of circuitry, processors, programs, software, etc.) in the method or device in which the element is included.
The term "and/or" herein is merely an association relationship describing an associated object, and means that there may be three relationships, for example, a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the term "at least one" herein means any one of a plurality or any combination of at least two of a plurality, for example, including at least one of A, B, C, and may mean including any one or more elements selected from the group consisting of A, B and C.
For example, a voltage regulating device provided in an embodiment of the present invention includes a series of circuits, but the voltage regulating device provided in an embodiment of the present invention is not limited to include explicitly described circuits, and may include circuits that are required to obtain relevant information or perform processing based on the information. Similarly, the voltage regulation method provided by the embodiment of the present invention includes a series of steps, but the voltage regulation method provided by the embodiment of the present invention is not limited to the described steps.
The embodiment of the invention provides a voltage regulating device, which comprises a first branch circuit and a reference voltage output circuit, wherein the first branch circuit is formed by connecting a thermistor and a first resistor in series, and the voltage at two ends of the first branch circuit is the driving voltage of a transistor; wherein the content of the first and second substances,
the resistance value of the thermistor is in negative correlation with the junction temperature of the transistor, and the reference voltage output circuit is used for providing direct current reference voltage to two ends of the thermistor.
Fig. 1 is a schematic structural diagram of a voltage regulator according to an embodiment of the present invention, referring to fig. 1,the voltage regulation device includes: a first branch 1 and a reference voltage output circuit 2, wherein the first branch 1 is a first resistor R1 and a thermistor R NTC The branches formed in series. The two ends of the first branch 1 are connected to a transistor, where the transistor may be an IGBT or a MOSFET, and the embodiment of the present invention is not limited thereto.
Illustratively, when the transistor is an NPN type IGBT, the collector of the IGBT is connected to one end of the first resistor R1, and the base of the IGBT is connected to the thermistor R NTC Is connected with one end of the connecting rod; when the transistor is an N-type MOSFET, the gate of the MOSFET is connected with one end of the first resistor R1, and the source of the MOSFET is connected with the thermistor R NTC Is connected at one end.
In the embodiment of the present invention, the voltage across the first branch 1 is the driving voltage of the transistor, where the driving voltage of the transistor represents the supply voltage when the transistor starts to operate, and is denoted by V g Represents; the reference voltage output circuit 2 is used for supplying reference voltage to the thermistor R NTC The reference voltage refers to a voltage in the circuit which is irrelevant to load, power supply, temperature drift, time and the like and can be kept constant all the time.
In the embodiment of the invention, the thermistor R NTC Is a Negative Temperature Coefficient thermistor (NTC thermistor), i.e. thermistor R NTC Decreases with increasing temperature. The thermistor R can be connected NTC The thermistor R can be integrated in the transistor module or additionally arranged in the voltage regulating device NTC General thermistor R NTC Close to the center position of the transistor, the closer to the center position, the higher the accuracy of the measured temperature.
In the embodiment of the invention, the thermistor R NTC Is influenced by the transistor, and when the transistor is operated for a period of time, the temperature of the transistor rises, and the thermistor R close to the transistor NTC Will also rise, and thus the thermistor R NTC The resistance value of (A) decreases with increasing temperature, i.e. thermistor R NTC Is inversely related to the junction temperature of the transistorHere, the junction temperature represents the actual operating temperature of the transistor. It can be seen that the thermistor R NTC Can reflect the change situation of the transistor temperature, and can be used for detecting the temperature of the transistor.
Illustratively, with a thermistor R NTC The junction temperature of the transistor is sampled, and fig. 2 shows a thermistor R in an embodiment of the invention NTC With reference to fig. 2, when the temperature is T TH While, the thermistor R NTC Corresponding resistance value of R TH (ii) a When the temperature is T max I.e. at maximum temperature, thermistor R NTC Corresponding resistance value of R min I.e. the resistance value is minimal, here, T max >T TH ，R TH >R min 。
In the embodiment of the invention, when the transistor works in a higher temperature range, the transistor can be based on the thermistor R NTC The driving voltage of the transistor is adjusted. When the junction temperature of the transistor rises, the thermistor R close to the transistor NTC Is correspondingly increased, the thermistor R NTC The voltage across the first branch 1 increases, and the voltage across the first branch 1 is the driving voltage of the transistor, so the driving voltage of the transistor increases.
In the embodiment of the invention, when the transistor works in the normal temperature range, the thermistor R NTC Is also within the normal temperature range, the thermistor R NTC So that the voltage across the first branch 1 does not change, and at this time the thermistor R does not change NTC The drive voltage of the transistor is not adjusted.
It can be seen that, in the embodiment of the present invention, the voltage regulation apparatus includes a first branch 1 and a reference voltage output circuit 2, the first branch 1 is composed of a thermistor R NTC And a branch circuit connected in series with the first resistor R1, wherein the reference voltage output circuit 2 is used for providing a dc reference voltage to two ends of the thermistor, and two ends of the first branch circuit 1 are connected to the transistor, so that the driving voltage of the transistor is the voltage of two ends of the first branch circuit 1, and therefore, the driving voltage can be based on the thermistor R1 NTC To transistorsThe driving voltage is adjusted. When the junction temperature of the transistor rises, the thermistor R close to the transistor NTC Is also increased correspondingly, and the thermistor R NTC The resistance value of (2) is decreased, so that the voltage across the first branch 1 is increased, and thus the driving voltage of the transistor is increased, and the on-resistance of the transistor is decreased along with the increase of the driving voltage of the transistor, that is, the on-voltage drop of the transistor can be decreased by increasing the driving voltage of the transistor, so that the on-loss of the transistor can be decreased. It can be seen that embodiments of the present invention are based on a thermistor R NTC When the temperature of the transistor rises, the driving voltage of the transistor is increased, and the conduction loss of the transistor is reduced.
In some embodiments, the reference voltage output circuit comprises a three-terminal regulator tube; wherein the content of the first and second substances,
the input end of the three-terminal voltage-stabilizing tube is connected with the anode of the first power supply, the grounding end of the three-terminal voltage-stabilizing tube is grounded, the output end of the three-terminal voltage-stabilizing tube is connected with one end of the thermistor, and the other end of the thermistor is grounded.
In the embodiment of the invention, the device further comprises a first power supply 6, the first power supply 6 is used for supplying direct current voltage to the voltage regulating device, the voltage value of the first power supply 6 can be represented by Vin, and a three-terminal voltage regulator tube is used for supplying heat to the thermistor R NTC Provide a DC reference voltage, V for the DC reference voltage ref So that the drive voltage of the transistor is only heated by the thermistor R NTC The influence of the resistance value of (2), V is used as the driving voltage of the transistor g To indicate that V is g ＝V ref (1+R1/R NTC )。
It should be noted that the output voltage of the three-terminal regulator tube is a constant voltage, and because the three-terminal regulator tube has only three leading-out terminals, the three-terminal regulator tube has the advantages of few external elements, convenient use, stable performance, low price and the like.
In some embodiments, the apparatus further comprises a first voltage limiting circuit; wherein the content of the first and second substances,
the first voltage limiting circuit is connected with the first branch in parallel, and is used for limiting the voltage at two ends of the first branch so that the voltage at two ends of the first branch is smaller than or equal to the voltage limiting value of the first voltage limiting circuit.
In the embodiment of the present invention, referring to fig. 1, the voltage regulating apparatus further includes a first voltage limiting circuit 3, where the first voltage limiting circuit 3 is configured to limit the voltage across the first branch 1, so as to limit the driving voltage of the transistor to be less than or equal to the voltage limiting value of the first voltage limiting circuit.
In the embodiment of the invention, when the temperature of the transistor is increased, the thermistor R NTC Is increased, the thermistor R NTC Such that the driving voltage of the transistor is always increased, but based on the properties of the transistor, the transistor has a maximum operating voltage, i.e. a voltage allowing maximum continuous operation across the transistor, denoted V g-max When the driving voltage of the transistor exceeds the maximum working voltage, the transistor may be damaged, so that the driving voltage of the transistor needs to be limited within a certain safe working range, and when the driving voltage of the transistor is increased to the voltage limiting value of the first voltage limiting circuit 3, the driving voltage of the transistor is kept unchanged and is not increased any more, namely, V g ≤V g-max 。
In the embodiment of the present invention, the voltage limiting device in the first voltage limiting circuit 3 may be a clamping diode or a voltage stabilizing diode, and the embodiment of the present invention is not limited thereto. The clamp diode is a diode for limiting the potential at a certain point in the circuit; the voltage stabilizing diode is a diode which is manufactured by utilizing the phenomenon that the current of a PN junction is changed in a large range and the voltage is basically unchanged in a reverse breakdown state and has the function of stabilizing the voltage.
In the embodiment of the present invention, the maximum operating voltage value of the transistor may be determined as the voltage limiting value of the first voltage limiting circuit 3, or the voltage limiting value of the first voltage limiting circuit 3 may be determined according to the existing voltage limiting value, which is not limited in the embodiment of the present invention.
It can be seen that the voltage across the first branch 1 is limited by the first voltage limiting circuit 3 such that the driving voltage of the transistor does not exceed its maximum operating voltage, thereby protecting the transistor from damage.
In some embodiments, the apparatus further comprises a second voltage limiting circuit; wherein the content of the first and second substances,
the second voltage limiting circuit is connected between the first power supply and the transistor, and is used for limiting the voltage at two ends of the first branch, so that the voltage at two ends of the first branch is greater than or equal to the voltage limiting value of the second voltage limiting circuit.
In the embodiment of the present invention, referring to fig. 1, the voltage regulating device further includes a second voltage limiting circuit 4, where the second voltage limiting circuit 4 is configured to limit the voltage at two ends of the first branch 1, so that the voltage at two ends of the first branch 1 is greater than or equal to the voltage limiting value of the second voltage limiting circuit, thereby limiting the driving voltage of the transistor to be greater than or equal to the rated operating voltage value thereof. The nominal operating voltage refers to the optimum voltage of the transistor during normal operation, and is also called the nominal voltage and is denoted as V g-nom When the driving voltage of the transistor is lower than the rated operation voltage value, the transistor cannot normally operate.
In the embodiment of the invention, when the temperature of the transistor is in a normal range, the driving voltage of the transistor needs to be larger than or equal to the rated working voltage value, namely V g ≥V g-nom Otherwise, the transistor will not work properly. Therefore, the voltage at both ends of the first branch 1 is limited in the second voltage limiting circuit 4, here, the voltage limiting device in the second voltage limiting circuit 4 may be a clamping diode or a voltage stabilizing diode, and the embodiment of the present invention is not limited thereto.
In the embodiment of the present invention, the rated operating voltage value of the transistor may be determined as the voltage limiting value of the second voltage limiting circuit 4, or the voltage limiting value of the second voltage limiting circuit 4 may be determined according to the existing voltage limiting value, which is not limited in the embodiment of the present invention.
In the embodiment of the invention, the driving voltage V of the transistor g ＝Vin-V 1 Here, V 1 The voltage drop of the voltage limiting device is shown, and V is enabled by selecting the appropriate voltage drop of the voltage limiting device g ≥V g-nom Then the voltage drop V of the voltage limiting device is required 1 ≤Vin-V g-nom Thereby realizing that the driving voltage of the transistor is larger than or equal to the rated working voltage value, namely V g ≥V g-nom ，V g ≥Vin-V 1 。
It can be seen that the voltage at the two ends of the first branch 1 is limited by the second voltage limiting circuit 4, so that the driving voltage of the transistor is not lower than the rated working voltage of the transistor, and the transistor can normally work and cannot be conducted due to the fact that the driving voltage is too small.
In the embodiment of the present invention, referring to fig. 1, the voltage regulating apparatus further includes a current amplifying circuit 5, and the current amplifying circuit 5 is configured to amplify a current provided by the first power source, so that the driving transistor operates normally. The current amplifying circuit 5 may include a current amplifying transistor.
Fig. 3 is a schematic circuit diagram of a specific implementation of a voltage regulation device according to an embodiment of the present invention, where as shown in the figure, the voltage regulation device includes: a first resistor R1, a second resistor R2, a third resistor R3 and a thermistor R NTC The power supply comprises a voltage stabilizing diode Z1, a three-terminal regulator tube Q1, a current amplifying triode T1, first clamping diodes D1 and … …, an nth clamping diode Dn and a first power source Vin.
In the embodiment of the invention, the first resistor R1 and the thermistor R NTC Forming a first branch circuit, wherein the first branch circuit is connected with the transistor, and the voltage at two ends of the first branch circuit is the driving voltage V of the transistor g (ii) a The input end of a three-terminal voltage regulator tube Q1 is connected with the base electrode of the current amplification triode T1, the grounding end of the three-terminal voltage regulator tube Q1 is grounded, and the output end of the three-terminal voltage regulator tube Q1 is connected with the thermistor R NTC Is connected with one end of the connecting rod; a collector of the current amplifying transistor T1 is connected to a positive electrode of the first power source Vin, and an emitter of the current amplifying transistor T1 is connected to one end of the first resistor R1; the voltage stabilizing diode Z1 is connected at two ends of the first branch circuit, and n clamping diodes are connected in parallel on the current amplifying triode T1; the second resistor R2 is connected between the input end of the three-terminal regulator Q1 and the base of the current amplifying triode T1, and the third resistor R3 is connected between the first power source Vin and the input end of the three-terminal regulator Q1.
In the embodiment of the invention, the three-terminal voltage regulator tube Q1 is used for heatingSensitive resistor R NTC The current amplifying transistor T1 is used for amplifying the current signal of the first power source Vin, the zener diode Z1 is used for making the driving voltage of the transistor not exceed its maximum operating voltage, and the clamping diodes D1, … … and the clamping diode Dn are used for making the driving voltage of the transistor not lower than its rated operating voltage.
In the embodiment of the invention, when the transistor works in a higher temperature range, the thermistor R close to the transistor NTC When the temperature of (2) rises, the thermistor R NTC So that the voltage across the first branch 1 increases, thereby increasing the driving voltage of the transistor; when the transistor works in the normal temperature range, the thermistor R NTC Is also within the normal temperature range, the thermistor R NTC So that the voltage across the first branch 1 does not change, i.e. the thermistor R NTC The drive voltage of the transistor is not adjusted.
Based on the same technical concept of the foregoing embodiments, the embodiments of the present invention further provide a voltage adjustment method, which is applied to a voltage adjustment device, where the voltage adjustment device is used to adjust a driving voltage of a transistor; referring to fig. 4, a schematic flow chart of a voltage regulation method according to an embodiment of the present invention is shown, where the flow chart may include:
step 401: a first temperature value of the transistor is obtained.
In the embodiment of the invention, the temperature of the transistor can be detected based on the thermistor, and the temperature of the transistor can also be detected based on the temperature sensor. When the temperature of the transistor is detected based on the thermistor, the thermistor can be integrated in the transistor module, if a single transistor of the transistor or other packages without the thermistor are used, the thermistor needs to be additionally prevented from being detected at a position close to the transistor, and when the thermistor is not integrated in the transistor, the detected temperature cannot directly reflect the junction temperature of the transistor, so that the temperature detected and obtained by the thermistor and the junction temperature of the transistor need to be in one-to-one correspondence, and the junction temperature of the transistor is calculated and obtained according to the temperature detected and obtained by the thermistor.
Step 402: determining the driving voltage of the transistor as the rated working voltage of the transistor under the condition that the first temperature value is within a preset temperature range;
and when the first temperature value is greater than a first threshold value, the driving voltage of the control transistor is increased, and the first threshold value is greater than or equal to the upper limit of the preset temperature range.
In the embodiment of the present invention, the preset temperature range may be preset according to existing experience, where the preset temperature range indicates that the temperature value of the transistor is low and is within a normal range, and at this time, the loss of the transistor is low, so that when the first temperature value is within the preset temperature range, the driving voltage of the transistor is determined as the rated operating voltage of the transistor, that is, the driving voltage of the transistor does not need to be adjusted.
In the embodiment of the present invention, the first threshold may be preset according to existing experience, and the first threshold is greater than or equal to an upper limit of the preset temperature range, that is, when the first temperature of the transistor is greater than the first threshold, it indicates that the current temperature of the transistor is higher, and the on-resistance of the transistor is higher, so that the on-loss of the transistor is increased, and therefore, the loss of the transistor needs to be reduced.
In the embodiment of the invention, based on the output characteristic of the transistor, the on-resistance of the transistor is reduced along with the increase of the driving voltage of the transistor, so that when the first temperature of the transistor is higher than the first threshold value, the driving voltage of the transistor is controlled to be increased, the on-resistance of the transistor can be reduced, and the loss of the transistor can be reduced.
Illustratively, as shown in fig. 5, the voltage adjusting device includes a power supply module 501, a temperature detection module 502, and a voltage adjusting module 503, where the power supply module 501 is configured to provide voltage to the voltage adjusting device, the temperature detection module 502 is configured to detect junction temperature of the transistor, and the voltage adjusting module 503 is configured to adjust driving voltage of the transistor according to the junction temperature of the transistor acquired by the temperature detection module 502.
It can be seen that, in the embodiment of the present invention, the first temperature of the transistor is detected, the driving voltage of the transistor is adjusted according to the first temperature, and when the first temperature value is greater than the first threshold value, the driving voltage of the transistor is controlled to increase, so that the on-resistance of the transistor can be reduced, and thus the loss of the transistor can be effectively reduced.
In some embodiments, the controlling the driving voltage of the transistor to rise comprises:
controlling the driving voltage of the transistor to rise to a first voltage value, the first voltage value being positively correlated with the first temperature value.
In some embodiments, the driving voltage of the control transistor increases with the increase of the first temperature value, i.e. the higher the first temperature value of the transistor, the higher the driving voltage of the transistor, and the first voltage value has a positive correlation with the first temperature value.
In some embodiments, the method further comprises:
and carrying out first voltage limiting processing on the driving voltage of the transistor to enable the driving voltage of the transistor to be smaller than or equal to the preset voltage limiting value.
In some embodiments, the preset voltage limiting value may be preset according to existing experience, and as the temperature of the transistor increases, the driving voltage of the control transistor also gradually increases, but after the driving voltage of the transistor exceeds a certain range, the transistor may be damaged due to an excessively high voltage, and therefore, the driving voltage of the transistor needs to be limited within a certain safe operating range, that is, the voltage limiting processing needs to be performed on the driving voltage of the transistor.
It can be seen that the driving voltage of the transistor is less than or equal to the preset voltage limit value by performing the first voltage limit processing on the driving voltage of the transistor, so that the transistor can be protected from being damaged.
In some embodiments, before the controlling the driving voltage of the transistor to rise to the first voltage value, the method further comprises: determining a first voltage value corresponding to the first temperature value;
the controlling the driving voltage of the transistor to rise to a first voltage value comprises:
and controlling the driving voltage of the transistor to be increased to a first voltage value under the condition that the first voltage value is less than or equal to a preset maximum voltage.
In some embodiments, the method further comprises:
determining the driving voltage of the transistor as the preset maximum voltage in case that the first voltage value is greater than the preset maximum voltage.
In some embodiments, the predetermined maximum voltage represents a voltage that allows maximum continuous operation across the transistor, which may cause the transistor to be damaged when the driving voltage of the transistor exceeds its maximum operating voltage.
In some embodiments, the driving voltage of the transistor corresponding to the temperature value of the transistor may be preset, so that the driving voltage of the transistor may be adjusted according to the acquired first temperature value of the transistor. After a first voltage value corresponding to the first temperature value is determined according to the first temperature value of the transistor, whether the first voltage value is smaller than or equal to a preset maximum voltage is judged, if yes, the first voltage value is in a safe working range of the transistor, and the driving voltage of the transistor can be controlled to be increased to the first voltage value; if not, the first voltage value is beyond the safe working range of the transistor, the driving voltage of the transistor is determined as the preset maximum voltage, and the driving voltage of the transistor is controlled to be increased to the preset maximum voltage.
It can be seen that the transistor can be controlled to work in the safe working range by judging whether the target value of the rise of the driving voltage of the transistor exceeds the safe working range of the transistor in advance, and the transistor is protected from being damaged.
In some embodiments, after the controlling the driving voltage of the transistor to increase, the method further includes:
acquiring a second temperature value of the transistor;
controlling the driving voltage of the transistor to be reduced when the change trend of the second temperature value is a reduction trend;
and determining the driving voltage of the transistor as the rated working voltage under the condition that the second temperature value is within a preset temperature range.
In some embodiments, the second temperature value of the transistor refers to a temperature value acquired by re-detecting the transistor after the driving voltage of the control transistor has been raised. Whether to control the driving voltage of the transistor to decrease may be determined according to the trend of the change in the second temperature value.
In some embodiments, when the trend of the change of the second temperature value is a decreasing trend, it indicates that the loss of the transistor has decreased, and therefore, the driving voltage of the transistor may be decreased, where the decrease of the driving voltage of the transistor may be controlled according to the driving voltage of the transistor corresponding to the preset temperature value of the transistor.
In some embodiments, when the second temperature value is within the preset temperature range, it indicates that the temperature of the transistor is within the normal temperature range, i.e. no adjustment is required to the driving voltage of the transistor, and therefore, the driving voltage of the transistor is determined as its rated operating voltage.
Fig. 6 is a schematic flowchart of a specific implementation of a voltage regulation method according to an embodiment of the present invention, and as shown in fig. 6, the flowchart may include:
step 601: a first temperature value of the transistor is obtained.
Step 602: judging whether the first temperature value is greater than a first threshold value, if so, executing a step 603; if not, go to step 604.
Step 603: judging whether the driving voltage of the transistor reaches the maximum voltage, if so, executing step 604; if not, go to step 605.
Step 604: the driving voltage of the transistor is kept unchanged and step 601 is executed.
Step 605: the driving voltage of the transistor is controlled to rise and step 601 is performed.
It will be understood by those skilled in the art that in the method of the present invention, the order of writing the steps does not imply a strict order of execution and any limitations on the implementation, and the specific order of execution of the steps should be determined by their function and possible inherent logic.
Based on the foregoing embodiments, another voltage adjustment apparatus provided in an embodiment of the present invention includes each included unit and each module included in each unit, and may be implemented by a processor and a memory in an electronic device; of course, the implementation can also be realized through a specific logic circuit; in an implementation, the Processor may be at least one of an Application Specific Integrated Circuit (ASIC), a Digital Signal Processor (DSP), a Digital Signal Processing Device (DSPD), a Programmable Logic Device (PLD), a Field Programmable Gate Array (FPGA), a Central Processing Unit (CPU), a controller, a microcontroller, and a microprocessor.
Fig. 7 is a schematic diagram of a voltage regulating device according to an embodiment of the present invention, referring to fig. 7, the device at least includes:
an obtaining module 701, configured to obtain a first temperature value of the transistor;
a control module 702, configured to determine a driving voltage of the transistor as a rated operating voltage of the transistor when the first temperature value is within a preset temperature range;
and controlling the driving voltage of the transistor to rise under the condition that the first temperature value is greater than a first threshold value, wherein the first threshold value is greater than or equal to the upper limit of the preset temperature range.
In one implementation, the control module 702 is configured to control the driving voltage of the transistor to increase, and includes:
controlling the driving voltage of the transistor to rise to a first voltage value, the first voltage value being positively correlated with the first temperature value.
In one implementation, the apparatus is further configured to: and carrying out first voltage limiting processing on the driving voltage of the transistor to enable the driving voltage of the transistor to be smaller than or equal to the preset voltage limiting value.
In one implementation, the control module 702 is further configured to determine a first voltage value corresponding to the first temperature value before the driving voltage for controlling the transistor is increased to the first voltage value;
the control module 702 is configured to control the driving voltage of the transistor to increase to a first voltage value, and includes:
and controlling the driving voltage of the transistor to rise to a first voltage value under the condition that the first voltage value is less than or equal to a preset maximum voltage.
In one implementation, the apparatus is further configured to: determining the driving voltage of the transistor as the preset maximum voltage in case that the first voltage value is greater than the preset maximum voltage.
In one implementation, the control module 702, after controlling the driving voltage of the transistor to increase, is further configured to:
acquiring a second temperature value of the transistor;
controlling the driving voltage of the transistor to be reduced when the change trend of the second temperature value is a reduction trend;
and determining the driving voltage of the transistor as the rated working voltage under the condition that the second temperature value is within a preset temperature range.
It should be noted that the above description of the embodiment of the apparatus, similar to the above description of the embodiment of the method, has similar beneficial effects as the embodiment of the method. For technical details not disclosed in the embodiments of the apparatus according to the invention, reference is made to the description of the embodiments of the method according to the invention for understanding.
It should be noted that, in the embodiment of the present invention, if the method is implemented in the form of a software functional module and sold or used as a standalone product, the method may also be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the embodiments of the present invention may be essentially or partially implemented in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which may be a terminal, a server, etc.) to execute all or part of the methods described in the embodiments of the present invention. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read Only Memory (ROM), a magnetic disk, or an optical disk. Thus, embodiments of the invention are not limited to any specific combination of hardware and software.
In some embodiments, functions of or modules included in the apparatus provided in the embodiments of the present invention may be used to execute the method described in the above method embodiments, and specific implementation thereof may refer to the description of the above method embodiments, and for brevity, will not be described again here.
Based on the same technical concept as the foregoing embodiment, referring to fig. 8, an electronic device 800 provided in an embodiment of the present invention may include: a memory 801 and a processor 802; wherein the content of the first and second substances,
a memory 801 for storing computer programs and data;
a processor 802 for executing a computer program stored in the memory to implement any of the voltage regulation methods in the foregoing embodiments.
In practical applications, the memory 801 may be a volatile memory (RAM); or a non-volatile memory (non-volatile memory) such as a ROM, a flash memory (flash memory), a Hard Disk (Hard Disk Drive, HDD) or a Solid-State Drive (SSD); or a combination of the above types of memories and provides instructions and data to the processor 802.
The foregoing description of the various embodiments is intended to highlight various differences between the embodiments, and the same or similar components may be referred to one another, and for brevity, are not repeated herein.
The methods disclosed in the method embodiments provided by the present invention can be combined arbitrarily without conflict to obtain a new method embodiment.
Features disclosed in each product embodiment provided by the invention can be combined arbitrarily to obtain a new product embodiment without conflict.
The features disclosed in the method or device embodiments of the invention may be combined in any combination to arrive at new method or device embodiments without conflict.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described device embodiments are merely illustrative, and for example, the division of the unit is only one logical function division, and there may be other division ways in actual implementation, such as: multiple units or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. In addition, the coupling, direct coupling or communication between the components shown or discussed may be through some interfaces, and the indirect coupling or communication between the devices or units may be electrical, mechanical or other forms.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of grid units; some or all of the units can be selected according to actual conditions to achieve the purpose of the scheme of the embodiment.
In addition, all the functional units in the embodiments of the present invention may be integrated into one processing module, or each unit may be separately used as one unit, or two or more units may be integrated into one unit; the integrated unit can be realized in a form of hardware, or in a form of hardware plus a software functional unit.
Those of ordinary skill in the art will understand that: all or part of the steps for implementing the method embodiments may be implemented by hardware related to program instructions, and the program may be stored in a computer readable storage medium, and when executed, the program performs the steps including the method embodiments.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.
Claims (13)
1. A voltage regulation device is characterized by comprising a first branch circuit and a reference voltage output circuit, wherein the first branch circuit is formed by connecting a thermistor and a first resistor in series, and the voltage at two ends of the first branch circuit is the driving voltage of a transistor; wherein the content of the first and second substances,
the resistance value of the thermistor is in negative correlation with the junction temperature of the transistor, and the reference voltage output circuit is used for providing direct current reference voltage to two ends of the thermistor.
2. The apparatus of claim 1, wherein the reference voltage output circuit comprises a three-terminal regulator tube; wherein the content of the first and second substances,
the input end of the three-terminal voltage-stabilizing tube is connected with the anode of the first power supply, the grounding end of the three-terminal voltage-stabilizing tube is grounded, the output end of the three-terminal voltage-stabilizing tube is connected with one end of the thermistor, and the other end of the thermistor is grounded.
3. The apparatus of claim 1 or 2, further comprising a first voltage limiting circuit; wherein, the first and the second end of the pipe are connected with each other,
the first voltage limiting circuit is connected with the first branch in parallel, and is used for limiting the voltage at two ends of the first branch so that the voltage at two ends of the first branch is smaller than or equal to the voltage limiting value of the first voltage limiting circuit.
4. The apparatus of claim 2, further comprising a second voltage limiting circuit; wherein the content of the first and second substances,
the second voltage limiting circuit is connected between the first power supply and the transistor and used for limiting the voltage at two ends of the first branch, so that the voltage at two ends of the first branch is greater than or equal to the voltage limiting value of the second voltage limiting circuit.
5. A voltage regulation method applied to a voltage regulation device for regulating a driving voltage of a transistor, the method comprising:
acquiring a first temperature value of the transistor;
determining the driving voltage of the transistor as the rated working voltage of the transistor under the condition that the first temperature value is in a preset temperature range;
and controlling the driving voltage of the transistor to rise under the condition that the first temperature value is greater than a first threshold value, wherein the first threshold value is greater than or equal to the upper limit of the preset temperature range.
6. The method of claim 5, wherein the controlling the driving voltage of the transistor to rise comprises:
controlling the driving voltage of the transistor to rise to a first voltage value, the first voltage value being positively correlated with the first temperature value.
7. The method of claim 5 or 6, further comprising:
and carrying out first voltage limiting processing on the driving voltage of the transistor to enable the driving voltage of the transistor to be smaller than or equal to the preset voltage limiting value.
8. The method of claim 6, wherein prior to said controlling the drive voltage of the transistor to rise to the first voltage value, the method further comprises: determining a first voltage value corresponding to the first temperature value;
the controlling the driving voltage of the transistor to rise to a first voltage value comprises:
and controlling the driving voltage of the transistor to be increased to a first voltage value under the condition that the first voltage value is less than or equal to a preset maximum voltage.
9. The method of claim 8, further comprising:
determining the driving voltage of the transistor as the preset maximum voltage in case that the first voltage value is greater than the preset maximum voltage.
10. The method of claim 5, wherein after controlling the driving voltage of the transistor to increase, further comprising:
acquiring a second temperature value of the transistor;
controlling the driving voltage of the transistor to be reduced when the change trend of the second temperature value is a reduction trend;
and determining the driving voltage of the transistor as the rated working voltage under the condition that the second temperature value is within a preset temperature range.
11. A voltage regulation device, characterized in that it comprises at least:
the acquisition module is used for acquiring a first temperature value of the transistor;
the control module is used for determining the driving voltage of the transistor as the rated working voltage of the transistor under the condition that the first temperature value is within a preset temperature range;
and controlling the driving voltage of the transistor to rise under the condition that the first temperature value is greater than a first threshold value, wherein the first threshold value is greater than or equal to the upper limit of the preset temperature range.
12. An electronic device, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor implements the voltage regulation method of any one of claims 5-10 when executing the program.
13. A computer storage medium storing a computer program; characterized in that the computer program is capable of implementing the voltage regulation method of any one of claims 5-10 when executed.
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